Component with magnetic film, thermoelectric conversion element, magnetic device, and method for manufacturing component with magnetic film

Abstract

The magnetic film-equipped member 1a includes a magnetic film 10 and a first portion 20. The first portion 20 is a portion that comes into contact with the magnetic film-equipped member 1a. The oxygen content in the magnetic film 10 is 1% or less on an atomic number basis. The difference between the standard Gibbs energy of formation of an oxide of a first element ΔG1 and the standard Gibbs energy of formation of an oxide of a second element ΔG2 is 0 kJ / mol or less. The first element is an element that exists in the first portion 20 in an elemental form. Alternatively, the first element is an element having the lowest standard Gibbs energy of formation of an oxide among elements that exist in the first portion 20 in a manner capable of bonding with oxygen. The second element is an element having the lowest standard Gibbs energy of formation of an oxide among elements included in the magnetic film 10.

Description

Technical Field

[0001] This invention relates to components with magnetic films, thermoelectric conversion elements, magnetic devices, and methods for manufacturing components with magnetic films. Background Technology

[0002] Various studies have been conducted on components and devices that use magnetic materials.

[0003] For example, Patent Document 1 describes a thermoelectric power generation device having a power generation element comprising a ferromagnetic material magnetized in a predetermined direction. The power generation element is configured to generate electricity by utilizing a temperature difference in a direction perpendicular to the magnetization direction through the anomalous Nernst effect. The power generation element is disposed in the form of a thin film on a substrate at least on the surface of which is formed of MgO. The power generation element comprises an L10 type ordered alloy having high magnetic anisotropy.

[0004] Non-Patent Document 1 describes a large anomalous Nernst effect in DO3-type Fe3Ga or Fe3Al ferromagnets, which originates from a topological band structure known as a nodal web. This document also describes the formation of a thin film of this ferromagnet on an MgO substrate, exhibiting a large anomalous Nernst effect.

[0005] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2012-72256 Non-patent literature Non-patent literature 1: Nature, (UK), 2020, 581, 53-57 Summary of the Invention

[0006] The problem that the invention aims to solve With the development of the Internet of Things (IoT) society, the demand for sensors such as magnetic and thermal sensors continues to rise. Furthermore, with the increase in information processing speed, there is also a demand for higher-speed information processing devices such as random access memory.

[0007] Components or devices with magnetic films are highly anticipated as a technology to address such needs. According to Patent Document 1 and Non-Patent Document 1, in order to form the specified magnetic film, a substrate or MgO substrate with at least a surface layer of MgO is used. Furthermore, it is conceivable that the process conditions used to obtain the specified magnetic film may be limited. For example, in Non-Patent Document 1, the base pressure is 1×10⁻⁶. -8 A thin film of ferromagnetic material was formed under ultra-high vacuum conditions of Pa.

[0008] In view of this situation, the present invention provides a component with a magnetic film that is advantageous from the viewpoint of reducing the limitations imposed in order to obtain a specified magnetic film.

[0009] Methods for solving problems The present invention provides a component with a magnetic film, comprising: Magnetic film; and The first part is in contact with the aforementioned magnetic film. The oxygen content in the aforementioned magnetic film is less than 1% on an atomic basis. The difference obtained by subtracting the standard Gibbs formation energy of the oxide of the second element from the standard Gibbs formation energy of the oxide of the first element is less than 0 kJ / mol. The aforementioned first element is the element with the lowest standard Gibbs energy of oxide formation among elements that exist in elemental form or that exist in the aforementioned first part in a manner that can bond with oxygen. The aforementioned second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the aforementioned magnetic film.

[0010] Furthermore, the present invention provides a thermoelectric conversion element comprising the aforementioned component with a magnetic film. The aforementioned magnetic film contains a magnetic material exhibiting an anomalous Nernst effect.

[0011] Furthermore, the present invention provides a magnetic device comprising the aforementioned component with a magnetic film. The aforementioned magnetic film contains a magnetic material that exhibits the anomalous Hall effect.

[0012] Furthermore, the present invention provides a method for manufacturing a component with a magnetic film, which includes heating a film, which serves as a precursor of the magnetic film, while in contact with a first portion to obtain the aforementioned magnetic film. The oxygen content in the aforementioned magnetic film is less than 1% on an atomic basis. The difference obtained by subtracting the standard Gibbs formation energy of the oxide of the second element from the standard Gibbs formation energy of the oxide of the first element is less than 0 kJ / mol. The aforementioned first element is the element with the lowest standard Gibbs formation energy of its oxide among elements that exist in the aforementioned first part in their elemental form or that exist in the aforementioned first part in a manner capable of bonding with oxygen. The aforementioned second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the aforementioned magnetic film.

[0013] Invention Effects The aforementioned component with a magnetic film is advantageous from the viewpoint of reducing the limitations imposed in obtaining the specified magnetic film. Attached Figure Description

[0014] [ Figure 1 ] Figure 1 A cross-sectional view showing an example of a component with a magnetic film.

[0015] [ Figure 2 ] Figure 2 A cross-sectional view showing other examples of components with magnetic films.

[0016] [ Figure 3 ] Figure 3 A cross-sectional view showing another example of a component with a magnetic film.

[0017] [ Figure 4 ] Figure 4 A top view showing an example of a thermoelectric conversion element.

[0018] [ Figure 5 ] Figure 5 For Figure 4 The diagram shows a cross-sectional view of the thermoelectric conversion material with the VV line as the cutting line.

[0019] [ Figure 6 ] Figure 6 The diagram illustrates an example of a magnetic device.

[0020] [ Figure 7 ] Figure 7 The diagram shows the XRD pattern of the laminate comprising a magnetic film and a substrate film according to Example 1.

[0021] [ Figure 8 ] Figure 8 The diagram shows the XRD pattern of the laminate containing a magnetic film and a substrate film involved in Example 2. Detailed Implementation

[0022] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that the following description is illustrative of the present invention, and the present invention is not limited to the following embodiments. In the drawings, the X-axis, Y-axis, and Z-axis are orthogonal to each other.

[0023] like Figure 1As shown, the component 1a with the magnetic film includes a magnetic film 10 and a first portion 20. The first portion 20 is the portion in contact with the magnetic film 10. The oxygen content in the magnetic film 10 is 1% or less based on the atomic number. By making the oxygen content in the magnetic film 10 so low, the magnetic film 10 can easily exhibit the desired properties. In the component 1a with the magnetic film, the difference ΔG1-ΔG2 obtained by subtracting the standard Gibbs generation energy ΔG2 of the oxide of the second element from the standard Gibbs generation energy ΔG1 of the oxide of the first element is 0 kJ / mol or less. The first element is an element that exists in the first portion 20 in its elemental form. Alternatively, the first element is the element with the lowest standard Gibbs generation energy of its oxide among the elements that exist in the first portion 20 in a manner that can bond with oxygen. The state of existing in a manner that can bond with oxygen is, for example, a state that is not bonded with oxygen but can achieve bonding with oxygen. The second element is the element with the lowest standard Gibbs generation energy of its oxide among the elements contained in the magnetic film 10. The oxides referenced when determining the standard Gibbs formation energies ΔG1 and ΔG2 are those with the lowest standard Gibbs formation energies per mole of oxygen atoms.

[0024] As described above, by keeping the oxygen content in the magnetic film 10 low, the magnetic film 10 easily exhibits the desired characteristics. In the component 1a with the magnetic film, the condition that the difference ΔG1-ΔG2 is below 0 kJ / mol is met, therefore, the oxygen contained in the precursor of the magnetic film 10 easily moves to the first portion 20 through heating or the like. Therefore, for example, even without using an MgO substrate, the magnetic film 10 easily possesses the desired characteristics, even if the magnetic film 10 is not formed at a low pressure of 1×10⁻⁶. -8 By adjusting the vacuum conditions to around Pa, the magnetic film 10 can easily acquire the desired characteristics. In other words, based on the component 1a with the magnetic film, the limitations imposed on obtaining the magnetic film 10 can be easily reduced.

[0025] The oxygen content in the magnetic film 10 is expected to be less than 0.8% on an atomic basis, more preferably less than 0.5%, and further preferably less than 0.1%.

[0026] The expected difference ΔG1-ΔG2 is below -200 kJ / mol, the more expected difference is below -500 kJ / mol, and the further expected difference is below -600 kJ / mol.

[0027] As long as the difference ΔG1 - ΔG2 is below 0 kJ / mol, the standard Gibbs formation energies ΔG1 and ΔG2 are not limited to specific values. The standard Gibbs formation energy ΔG1 can be, for example, -500 to -2000 kJ / mol, or it can be -1000 to -2000 kJ / mol. The standard Gibbs formation energy ΔG2 can be, for example, 0 to -2000 kJ / mol.

[0028] like Figure 1As shown, the first portion 20 is, for example, in the form of a film. The first portion 20 is formed, for example, by contacting a main surface of the magnetic film 10.

[0029] like Figure 1 As shown, the component 1a with the magnetic film also includes, for example, a substrate 30. A first portion 20 is disposed, for example, between the substrate 30 and the magnetic film 10 in the thickness direction of the magnetic film 10. With this configuration, the temperature of the first portion 20 can easily rise rapidly during heating of the precursor of the magnetic film 10, and oxygen present in the precursor of the magnetic film 10 can more easily migrate to the first portion 20. Therefore, the magnetic film 10 is more likely to possess the desired characteristics.

[0030] The thickness of the magnetic film 10 is not limited to a specific value. Its thickness is, for example, 1 nm to 1000 nm. Its thickness can be 5 nm or more, 10 nm or more, 20 nm or more, or 50 nm or more, or it can be less than 500 nm, less than 100 nm, or less than 50 nm.

[0031] When the first portion 20 is in the form of a film, the thickness of the first portion 20 is not limited to a specific value. For example, the thickness of the first portion 20 is less than the thickness of the magnetic film 10. In this case, the time required to form the first portion 20 can be shortened, and the component 1a with the magnetic film can be easily mass-produced.

[0032] The thickness of the first part 20 can also be, for example, 1nm~50nm, 2nm~10nm or 2nm~5nm.

[0033] The substrate 30 is not limited to a specific substrate. The material forming the substrate 30 can be an inorganic material or an organic material. The substrate 30 can be a silicon substrate with a thermally oxidized film, a silicon substrate with a surface formed of metallic silicon, or a glass substrate. When the material forming the substrate 30 is an organic material, examples of organic materials are polyethylene terephthalate (PET), polyethylene naphthalate (PEN), acrylic resin (PMMA), polycarbonate (PC), polyimide (PI), or cyclic olefin polymer (COP).

[0034] The first part 20, for example, contains an alloy having the first element. In this case, the properties of the first part 20 are easily adjusted. Therefore, the first part 20 is likely to have properties that are advantageous from the viewpoint of moving oxygen contained in the precursor of the magnetic film 10 to the first part 20 by heating or the like. As mentioned above, the first part 20 may also contain an element having the first element.

[0035] When the first part 20 contains an alloy, the alloy can be either an ordered alloy or a disordered alloy. The first part 20 is expected to contain a first ordered alloy. Examples of the first ordered alloy are type D03, type L10, or D0... 19Type of ordered alloy.

[0036] The magnetic material included in the magnetic film 10 is not limited to a specific magnetic material. For example, the magnetic material included in the magnetic film 10 may be a magnetic material exhibiting an anomalous Nernst effect or an anomalous Hall effect. The magnetic material may, for example, have a topological band structure.

[0037] The magnetic film 10 may contain a second ordered alloy as the magnetic material. In this case, the magnetic film 10 readily exhibits effects such as the anomalous Nernst effect and the anomalous Hall effect. Examples of the second ordered alloy are type D03, type L10, or D0... 19 Type II ordered alloys. Examples of second ordered alloys are D03 type Fe3Ga, D03 type Fe3Al, L10 type FePt, L10 type FeNi, L10 type FePt, and D0 19 Mn3Sn and Mn3Ge of the type.

[0038] In the case where the magnetic film 10 includes a magnetic body exhibiting an anomalous Nernst effect, the magnetic body may have a 5 × 10⁻⁶ Ω·cm diameter. -3 Magnetic materials with a saturation magnetic susceptibility above T or with a band structure having a Weyl point near the Fermi level. The magnetic material may also be a ferrimagnetic material. The magnetic film 10 may contain at least one material selected from, for example, the group consisting of (i), (ii), (iii), (iv), and (v) below, as a magnetic material exhibiting an anomalous Nernst effect.

[0039] (i) having a stoichiometric composition represented by Fe3X (ii) Non-stoichiometric composition ratios of Fe and X that deviate from those in (i) above. (iii) A substance in which a portion of the Fe site of substance (i) above or a portion of the Fe site of substance (ii) above is replaced by a typical metallic element or transition element other than X. (iv) Having Fe3M1 1-x M2 x The composition represented by (0 < x < 1), where M1 and M2 are substances with distinct typical elements. (v) A substance in which a portion of the Fe site of the substance in (i) above is replaced by a transition element other than X, and a portion of the X site of the substance in (i) above is replaced by a typical metallic element other than X.

[0040] In the substances described in (i) to (v) above, X is a typical element or a transition element. X is, for example, Al, Ga, Ge, Sn, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Sc, Ni, Mn, or Co. In (iv) above, for combinations of M1 and M2, it is not limited to specific combinations as long as M1 and M2 are different typical elements from each other. In (iv) above, combinations of M1 and M2 are, for example, Ga and Al, Si and Al, or Ga and B.

[0041] The magnetic film 10 may also contain Co2MnGa or Mn3Sn as a magnetic material exhibiting the anomalous Nernst effect.

[0042] In cases where the magnetic material contained in the magnetic film 10 exhibits an anomalous Hall effect, the magnetic material may also contain Mn3Sn or Mn3Ge.

[0043] When the first portion 20 contains a first ordered alloy and the magnetic film 10 contains a second ordered alloy, the relationship between the first ordered alloy and the second ordered alloy is not limited to a specific relationship. For example, the orderliness of the first ordered alloy contained in the first portion 20 may be the same as the orderliness of the second ordered alloy contained in the magnetic film 10. In this case, the magnetic film 10 can easily exhibit the desired characteristics.

[0044] For example, the first ordered alloy and the second ordered alloy can be either D03 type ordered alloys or L10 type ordered alloys.

[0045] The magnetic film 10, for example, has a polycrystalline structure. In this case, the coercivity of the magnetic material tends to increase due to the formation of grain boundaries.

[0046] An example of a method for manufacturing a component 1a with a magnetic film will be described. The component 1a with a magnetic film can be manufactured by heating a film serving as a precursor to the magnetic film 10 while it is in contact with a first portion 20, thereby obtaining the magnetic film 10. In this case, as the film serving as the precursor to the magnetic film 10 is heated, the oxygen contained in the precursor moves toward the first portion 20. As a result, the oxygen content in the magnetic film 10 decreases, and the magnetic film 10 becomes more likely to exhibit the desired properties. If, when attempting to form a magnetic film 10 with desired properties without contacting the film serving as the precursor to the magnetic film 10 with the first portion 20, it is necessary to use a substrate containing MgO and to apply a low pressure of 1×10... -8 Adjusting the vacuum conditions during film formation in a manner around Pa. On the other hand, according to the method described above, these steps can be omitted.

[0047] For example, the bottom pressure during the formation of the magnetic film 10 is, for example, 1 × 10⁻⁶. -7 Below Pa, it can also be 1×10-6 Below Pa. The bottom pressure during the formation of the magnetic film 10 is, for example, 5 × 10⁻⁶ Pa. -4 Pa or above.

[0048] For example, a film serving as a precursor to the magnetic film 10 is formed on the first portion 20. This film can be formed by methods such as sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), ion plating, and electroplating. Among these methods, sputtering improves the uniformity of the film composition and thickness, making it easier to increase the productivity of the component 1a with the magnetic film.

[0049] The temperature at which the film, which serves as the precursor of the magnetic film 10, is heated is not limited to a specific value. The temperature can be, for example, 200°C to 700°C, 250°C to 700°C, 250°C to 650°C, 250°C to 600°C, or 250°C to 550°C.

[0050] For example, before forming the film that serves as a precursor to the magnetic film 10, a first film-shaped portion 20 may be formed on the substrate 30. In this case, the first film-shaped portion 20 may be formed by methods such as sputtering, CVD, PLD, ion plating, and electroplating.

[0051] The component 1a with the magnetic film can be modified according to various considerations. For example, the component 1a with the magnetic film may also have a protective film. The protective film is arranged such that the magnetic film 10 is located between the protective film and the first portion 20 in the thickness direction of the magnetic film 10. As a result, the magnetic film 10 is protected, and the component 1a with the magnetic film easily has high durability. The material forming the protective film can be an inorganic material or an organic material.

[0052] The component 1a with the magnetic film can be changed, for example, as follows: Figure 2 The component 1b with magnetic film shown Figure 3 As shown in component 1c with a magnetic film. Components 1b and 1c with magnetic films are constructed in the same manner as component 1a, except for the parts specifically described.

[0053] like Figure 2 As shown, in the component 1b with the magnetic film, the magnetic film 10 is disposed, for example, between the substrate 30 and the first portion 20 in the thickness direction of the magnetic film 10. With this configuration, the oxygen content in the magnetic film 10 is easily reduced, and the magnetic film 10 easily exhibits the desired characteristics. In addition, the magnetic film 10 can be protected by the first portion 20.

[0054] like Figure 3As shown, the component 1c with the magnetic film does not have a substrate 30, and the first portion 20 can function as a substrate for the magnetic film 10. With this configuration, the oxygen content in the magnetic film 10 can be easily reduced, and the magnetic film 10 can easily exhibit the desired characteristics. In addition, the component 1c with the magnetic film can easily have a simplified structure.

[0055] In component 1a with a magnetic film, where the magnetic film 10 includes a magnetic material exhibiting an anomalous Nernst effect, a thermoelectric conversion element can be provided, for example. Figure 4 and Figure 5 As shown, the thermoelectric conversion element 3 includes a component 1a with a magnetic film 10, which contains a magnetic material exhibiting an anomalous Nernst effect. With this configuration, for example, a thermoelectric electromotive force accompanied by the anomalous Nernst effect is generated in a direction orthogonal to the heat flow direction and the magnetization direction of the magnetic film 10. By processing the signal accompanying this electromotive force, thermal sensing can be achieved.

[0056] In the thermoelectric conversion element 3, the magnetic film 10 is formed, for example, into a thin wire. With this configuration, for example, by magnetizing the thin wire of the magnetic film 10 in the width direction, a temperature gradient is generated in the thickness direction (Z-axis direction) of the magnetic film 10, enabling the generation of a thermoelectric electromotive force (TMF) with an anomalous Nernst effect in the length direction of the thin wire. In this case, a TMF corresponding to the length of the thin wire can be generated, thereby allowing the thermoelectric conversion element 3 to easily achieve the desired thermoelectric conversion performance.

[0057] The width of the fine wires formed by the magnetic film 10 is not limited to a specific value. For example, the width of the fine wires is 500 μm or less. This reduces the amount of material used for the fine wires, easily lowering the manufacturing cost of the thermoelectric conversion element 3. Furthermore, multiple fine wires can be easily arranged in the thermoelectric conversion element 3, making it easier for the thermoelectric conversion element 3 to achieve the desired thermoelectric conversion performance. For example, the width of the fine wires is 1 μm or more. This reduces the likelihood of wire breakage, making the thermoelectric conversion element 3 more durable.

[0058] The width of the fine line formed by the magnetic film 10 can be included in any of the ranges defined by any combination of a lower limit of 1 μm, 2 μm, 5 μm, 10 μm, 20 μm, and 30 μm and an upper limit of 500 μm, 400 μm, 300 μm, 200 μm, 100 μm, and 50 μm.

[0059] like Figure 4 and Figure 5As shown, in the thermoelectric conversion element 3, the magnetic film 10 forms multiple fine lines, which constitute the thermoelectric conversion section 11. The thermoelectric conversion element 3, for example, has a meandering pattern including the thermoelectric conversion section 11. With this configuration, the total length of the fine lines formed by the magnetic film 10 in the thermoelectric conversion element 3 tends to increase. The greater the total length of the fine lines formed by the magnetic film 10, the greater the electromotive force generated in the length direction (Y-axis direction) due to the temperature gradient in the thickness direction (Z-axis direction) of the magnetic film 10 tends to increase. Therefore, by having the thermoelectric conversion element 3 have a meandering pattern including the thermoelectric conversion section 11, the electromotive force generated in the thermoelectric conversion element 3 tends to increase.

[0060] like Figure 4 and Figure 5 As shown, in the thermoelectric conversion element 3, the first component 20, for example, forms the aforementioned fine wire together with the magnetic film 10.

[0061] like Figure 4 and Figure 5 As shown, the thermoelectric conversion element 3 also includes wiring 12, for example. Wiring 12 electrically connects the magnetic films 10, which are formed into fine lines, to each other. For example, multiple magnetic films 10, which are formed into fine lines, are electrically connected in series via wiring 12. Wiring 12, for example, has multiple wirings 14. The multiple fine lines formed by the magnetic films 10 and the multiple wirings 14 are electrically connected in series. With this configuration, even if the area of ​​the thermoelectric conversion section 11 and the wiring 14 is small, a large electromotive force can be easily generated in the thermoelectric conversion element 3.

[0062] Wiring 12 can be formed from a single metal or an alloy.

[0063] The thickness of wiring 12 is not limited to a specific value. Its thickness can be included in any of the ranges defined by any combination of any lower limit value of 5nm, 10nm, 20nm, 30nm, and 50nm and any upper limit value of 1000nm, 750nm, 500nm, 400nm, 300nm, and 200nm.

[0064] The width of wiring 12 is not limited to a specific value. Its width can be included in any of the ranges defined by any lower limit value of 0.1μm, 0.5μm, 1μm, 2μm, 5μm, 10μm, 20μm, and 30μm, and any upper limit value of 500μm, 400μm, 300μm, 200μm, 100μm, and 50μm.

[0065] like Figure 6As shown, for example, a magnetic device 5a can be provided, which includes a component 1a with a magnetic film. In the magnetic device 5a, the magnetic film 10 includes a magnetic material that exhibits an anomalous Hall effect. With such a configuration, for example, a memory or sensor utilizing the anomalous Hall effect can be provided.

[0066] like Figure 6 As shown, the magnetic device 5a includes a signal processing unit 51. The signal processing unit 51 processes the signal generated by the anomalous Hall effect accompanying the magnetic film 10. Alternatively, the signal processing unit 51 generates a predetermined signal to induce the anomalous Hall effect in the magnetic film 10, thereby changing the physical state of the magnetic film 10. Thus, the magnetic device 5a can function as a memory or a sensor.

[0067] Thermoelectric conversion element 3 and magnetic device 5a may each have a component 1b or 1c with a magnetic film instead of component 1a with a magnetic film.

[0068] Example The present invention will now be described in more detail through embodiments. However, the present invention is not limited to the following embodiments. First, the evaluation method of the embodiments will be described.

[0069] <Example 1> On a silicon substrate with a surface formed by thermal oxidation, an Al2O3 film with a thickness of 5 nm was formed by RF magnetron sputtering using an Al2O3 target. Next, a base film with a thickness of 5 nm was formed by DC magnetron sputtering using a target containing Fe and Al. The bottom voltage in the DC magnetron sputtering used to form this base film was adjusted to 5 × 10⁻⁶. -5 Pa. In addition, argon gas is supplied as the process gas for DC magnetron sputtering at a pressure of 0.1 Pa. The target material satisfies the molar ratio of Fe to Al = 3:1.

[0070] Next, using a target containing Fe and Ga, an alloy film with a thickness of 50 nm was formed by DC magnetron sputtering. The bottom voltage in the DC magnetron sputtering used to form this alloy film was adjusted to 5 × 10⁻⁶. -5 Pa. In addition, argon gas is supplied as the process gas for DC magnetron sputtering at a pressure of 0.1 Pa. The target material satisfies the molar ratio of Fe to Ga = 3:1.

[0071] Next, using an Al2O3 target, an Al2O3 film with a thickness of 5 nm was formed by RF magnetron sputtering. Then, using a target containing Fe and Al, an upper film with a thickness of 5 nm was formed by DC magnetron sputtering.

[0072] Next, the temperature around the alloy film was adjusted to 500°C, and the alloy film was annealed. The annealing time at 500°C was 1 hour. Thus, the component with the magnetic film involved in Example 1 was obtained. The standard Gibbs generation energies of Al2O3 and Ga2O3 are shown in Table 1.

[0073] <Example 2> The temperature around the alloy film during annealing was adjusted to 300°C. Otherwise, the same procedure as in Example 1 was followed to obtain the component with the magnetic film involved in Example 2.

[0074] <Comparative Example 1> The formation of the base film was omitted, and an alloy film was formed on the Al2O3 film. Otherwise, the same procedure as in Example 1 was followed to obtain the component with the magnetic film involved in Comparative Example 1.

[0075] [Structure of magnetic films and substrate films] X-ray diffraction (XRD) samples were prepared from laminates comprising a magnetic film and a substrate film, which are components with magnetic films according to the various embodiments and comparative examples. XRD measurements were performed using these samples with a Rigaku SmartLab XRD apparatus. The crystal structures in the magnetic film and the substrate film were determined based on the XRD patterns obtained by the XRD measurements. The results are shown in Table 1. Figure 7 The image shows the XRD pattern of the laminate containing a magnetic film and a substrate film according to Example 1. Figure 8 The table shows the XRD pattern of the laminate containing a magnetic film and a substrate film involved in Example 2. As shown in Table 1, the substrate film and magnetic film involved in Examples 1 and 2 are composed of D03 type ordered alloy.

[0076] Oxygen concentration in the magnetic membrane Samples for X-ray photoelectron spectroscopy (XPS) analysis were prepared from the magnetic films of the components with magnetic films involved in the various embodiments. The samples were analyzed using a ULVAC-PHI Quanera SXM XPS analyzer. Based on the results of the XPS analysis, the oxygen content in the magnetic film, on an atomic number basis, was determined. The results are shown in Table 1. As shown in Table 1, the oxygen content in the magnetic film, on an atomic number basis, is less than 1%.

[0077] [Evaluation of the anomalous Nernst effect] The Nernst coefficient S of the magnetic film components involved in each embodiment and comparative example was measured at 27–37°C using the PPMS Dynacool physical property measurement system manufactured by Quantum Design. ne and Seebeck coefficient S se resistivity ρ xxHall resistivity ρ yx Using these values ​​based on S ne =ρ xx α yx +S se ·ρ yx / ρ xx The relationship derives the transverse thermoelectric coefficient α yx The results are shown in Table 1. The Hall conductivity in Table 1 is the Hall resistivity ρ. yx The reciprocal of.

[0078] [Grain size] X-ray diffraction (XRD) samples were prepared from the magnetic films and substrate films of the magnetic films in the components involved in each embodiment and comparative example. XRD measurements were performed using these samples with a Rigaku SmartLab XRD apparatus. The grain size was estimated using the Scherrer formula based on the peaks obtained from the XRD measurements. The results are shown in Table 1.

[0079] As shown in Table 1, the transverse thermoelectric coefficient α of the magnetic films involved in Examples 1 and 2 yx The absolute value is greater than the transverse thermoelectric coefficient α of the magnetic film involved in Comparative Example 1. yx The absolute value of the magnetic film. The Hall angle θ of the magnetic films involved in Examples 1 and 2 is greater than the Hall angle θ of the magnetic film involved in Comparative Example 1. This implies that, since the components with magnetic films involved in Examples 1 and 2 contain a substrate film containing specified elements, even if the bottom pressure during the formation of the magnetic film is not increased to 1×10⁻⁶, the Hall angle θ of the magnetic film is greater than that of the magnetic film. -8 At around Pa, magnetic films that can exhibit anomalous Nernst effect, anomalous Hall effect, or spin Hall effect can also be formed.

[0080] [Table 1] A first aspect of the present invention provides a component with a magnetic film, comprising: Magnetic film; and The first part is in contact with the aforementioned magnetic film. The oxygen content in the aforementioned magnetic film is less than 1% on an atomic basis. The difference between the standard Gibbs energy of formation of the oxide of the first element and the standard Gibbs energy of formation of the oxide of the second element is less than 0 kJ / mol. The aforementioned first element is the element with the lowest standard Gibbs energy of oxide formation among elements that exist in elemental form or that exist in the aforementioned first part in a manner that can bond with oxygen. The aforementioned second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the aforementioned magnetic film.

[0081] A second aspect of the present invention provides a component with a magnetic film as described in the first aspect, which further comprises a substrate. The aforementioned first portion is disposed between the aforementioned substrate and the aforementioned magnetic film in the thickness direction of the aforementioned magnetic film.

[0082] A third aspect of the present invention provides a component with a magnetic film as described in the first or second aspect. The aforementioned first part comprises an alloy containing the aforementioned first element.

[0083] A fourth aspect of the present invention provides a component with a magnetic film as described in any of the first to third aspects. The aforementioned first part includes a first ordered alloy. The aforementioned magnetic film contains a second ordered alloy. The orderliness of the first ordered alloy is the same as that of the second ordered alloy.

[0084] A fifth aspect of the present invention provides a component with a magnetic film as described in any of the first to fourth aspects. The aforementioned magnetic film has a polycrystalline structure.

[0085] A sixth aspect of the present invention provides a thermoelectric conversion element comprising a component with a magnetic film as described in any of the first to fifth aspects. The aforementioned magnetic film contains a magnetic material exhibiting an anomalous Nernst effect.

[0086] A seventh aspect of the present invention provides a magnetic device comprising a component with a magnetic film as described in any one of the first to fifth aspects. The aforementioned magnetic film contains a magnetic material that exhibits an anomalous Hall effect.

[0087] An eighth aspect of the present invention provides a method for manufacturing a component with a magnetic film, comprising heating a film, which serves as a precursor of the magnetic film, while in contact with a first portion to obtain the aforementioned magnetic film. The oxygen content in the aforementioned magnetic film is less than 1% on an atomic basis. The difference between the standard Gibbs energy of formation of the oxide of the first element and the standard Gibbs energy of formation of the oxide of the second element is less than 0 kJ / mol. The aforementioned first element is the element with the lowest standard Gibbs formation energy of its oxide among elements that exist in the aforementioned first part in their elemental form or that exist in the aforementioned first part in a manner capable of bonding with oxygen. The aforementioned second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the aforementioned magnetic film.

Claims

1. A component with a magnetic film, comprising: Magnetic film; and The first part is in contact with the magnetic film. The oxygen content in the magnetic film is less than 1% on an atomic basis. The difference obtained by subtracting the standard Gibbs formation energy of the oxide of the second element from the standard Gibbs formation energy of the oxide of the first element is less than 0 kJ / mol. The first element is the element with the lowest standard Gibbs energy of formation of its oxide among elements that exist in elemental form or that exist in the first part in a manner that can bond with oxygen. The second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the magnetic film.

2. The component with a magnetic film as described in claim 1, further comprising a substrate, The first portion is disposed between the substrate and the magnetic film in the thickness direction of the magnetic film.

3. The component with a magnetic film as described in claim 1, wherein, The first part comprises an alloy containing the first element.

4. The component with a magnetic film as described in claim 1, wherein, The first portion comprises a first ordered alloy. The magnetic film comprises a second ordered alloy. The first ordered alloy has the same ordering property as the second ordered alloy.

5. The component with a magnetic film as described in claim 1, wherein, The magnetic film has a polycrystalline structure.

6. A thermoelectric conversion element comprising the component with a magnetic film as described in any one of claims 1 to 5. The magnetic film contains a magnetic material exhibiting an anomalous Nernst effect.

7. A magnetic device comprising the component with a magnetic film as described in any one of claims 1 to 5. The magnetic film contains a magnetic material that exhibits an anomalous Hall effect.

8. A method for manufacturing a component with a magnetic film, comprising heating a film, which serves as a precursor of the magnetic film, while in contact with a first portion to obtain the magnetic film. The oxygen content in the magnetic film is less than 1% on an atomic basis. The difference obtained by subtracting the standard Gibbs formation energy of the oxide of the second element from the standard Gibbs formation energy of the oxide of the first element is less than 0 kJ / mol. The first element is the element with the lowest standard Gibbs formation energy of its oxide among elements that exist in the first part in their elemental form or that exist in the first part in a manner capable of bonding with oxygen. The second element is the element with the lowest standard Gibbs formation energy of oxides among the elements contained in the magnetic film.

Images