Modular flow chamber kits, processing chambers, and related apparatuses and methods applicable to semiconductor manufacturing

Abstract

Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatuses and methods applicable to semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of injection channels arranged in a plurality of flow layers, and one or more exhaust channels formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate can be moved by at least one flow layer of the plurality of flow layers to align the substrate support between one or more first injection channels of a first flow layer and one or more second injection channels of a second flow layer.

Description

Technical Field

[0001] Embodiments of this disclosure relate to modular flow chamber kits, processing chambers, and related equipment and methods applicable to semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed to meet various application requirements, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a dielectric material or a semiconductor material, on the upper surface of the substrate. The material can be deposited in a side-flow chamber by flowing a processing gas parallel to the substrate surface positioned on a support and thermally decomposing the processing gas to deposit the material in the gas onto the substrate surface.

[0003] However, some operations (such as epitaxial deposition) can be time-consuming, expensive, and inefficient, and may have limited capacity and yield. For example, deposition may be limited in terms of selectivity, which may require additional etching and / or changes to the process formulation. Another example is that uniformly depositing and / or uniformly etching multiple structures can be difficult. Furthermore, the clarity of the structures (e.g., the boundaries between deposited layers) may be limited.

[0004] Therefore, there is a need for improved equipment and methods for semiconductor processing. Summary of the Invention

[0005] Embodiments of this disclosure relate to modular flow chamber kits, processing chambers, and related equipment and methods applicable to semiconductor manufacturing.

[0006] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing includes a chamber body. The chamber body at least partially defines a processing volume. The chamber body includes a plurality of injection channels formed within the chamber body and arranged in a plurality of flow layers, and one or more exhaust channels formed within the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed within the processing volume, and a plate spaced apart from the substrate support. The substrate support and the plate are movable by at least one of the plurality of flow layers such that the substrate support is aligned between one or more first injection channels of a first flow layer and one or more second injection channels of a second flow layer.

[0007] In one or more embodiments, a chamber assembly suitable for semiconductor manufacturing includes a liner and a substrate. The liner includes an inner surface, one or more first flow openings extending to the inner surface, second flow openings extending to the inner surface on a first side of the one or more first flow openings, and third flow openings extending to the inner surface on a second side of the one or more first flow openings. The substrate is sized and shaped to be disposed within the inner surface of the liner. The substrate includes an outer region sized and shaped to span the one or more first flow openings, one or more second flow openings, and one or more third flow openings.

[0008] In one or more embodiments, a method of substrate processing includes flowing a first airflow into a first flow layer of a processing chamber and through a substrate, and flowing a second airflow into a second flow layer of the processing chamber and through a substrate located above or below the substrate. The method includes heating the substrate and removing the substrate from the first flow layer while the first airflow flows into the first flow layer. Attached Figure Description

[0009] To provide a detailed understanding of the features described above, reference can be made to the embodiments for a more specific description, some of which are illustrated in the accompanying drawings. However, it must be noted that the drawings only show typical embodiments of this disclosure and should not be considered as limiting its scope, as other equally effective embodiments are permissible.

[0010] Figure 1 It is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0011] Figure 2 It is based on one or more implementation methods in Figure 1 The diagram shows a schematic cross-sectional side view of the processing chamber.

[0012] Figures 3A-3E This is a schematic partial side cross-sectional view of the processing chamber and gas circuit during the substrate processing method.

[0013] Figure 4 It is a partial schematic graphic view of a substrate processing method according to one or more embodiments.

[0014] Figure 5 It is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0015] Figure 6 It is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0016] Figure 7 It is based on one or more implementation methods. Figure 5 An enlarged schematic view of the lower padding protrusion shown in the image.

[0017] Figure 8 It is based on one or more implementation methods. Figure 5 The image shows a schematic enlarged view of axis 126 and the base.

[0018] Figure 9 It is a schematic partial cross-sectional view of a semiconductor device structure according to one or more embodiments.

[0019] Figure 10A-10D This is a schematic partial side cross-sectional view of the processing chamber during the substrate processing method.

[0020] For the purpose of clear vision, Figures 3A-3E The shadow has been omitted. This is for visual clarity. Figure 1 , 2 Some shading was also omitted in 5, 6 and 10A-10D.

[0021] For ease of understanding, the same reference numerals are used to indicate the same elements in the figures where possible. It is foreseeable that elements and features of one embodiment can be advantageously incorporated into other embodiments without further reiteration. Detailed Implementation

[0022] Embodiments of this disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable to semiconductor manufacturing. The subject matter described herein can be used to process a single substrate at a time, or to process two or more substrates simultaneously.

[0023] This disclosure takes into account that terms such as “coupling,” “coupling method,” “coupling element,” and “coupled” may include, but are not limited to, embedding, joining, welding, fusion, welding, interference fit, and / or fixing using methods such as screws, threaded connections, pins, and / or bolts. This disclosure also takes into account that terms such as “coupling,” “coupling method,” “coupling element,” and “coupled” may include, but are not limited to, integral molding. Furthermore, this disclosure takes into account that terms such as “coupling,” “coupling method,” “coupling element,” and “coupled” may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through elements such as links, blocks, and / or frames.

[0024] Figure 1 This is a schematic cross-sectional side view of a processing chamber 100 according to one or more embodiments. Figure 2 The side heat sources 118a and 118b shown in the image are... Figure 1 Not shown in the image for visual clarity. The processing chamber 100 includes a chamber body 130 defining an internal space 124. The internal space 124 includes a processing volume 128.

[0025] The chamber assembly 150 is placed within the processing volume 128 and is at least partially supported by a substrate support assembly 119 (e.g., a base assembly and / or annular assembly). The chamber assembly 150 includes a substrate support 1032, a plate 169 spaced apart from the substrate support 1032, and a second plate 171 spaced apart from the plate 169. The chamber assembly 150 comprises multiple layers to support multiple substrates 107 (two substrates are shown) for simultaneous processing (e.g., epitaxial deposition). This processing may include atomic layer epitaxial deposition. Figure 1 In the illustrated embodiment, chamber assembly 150 supports two substrates. Chamber assembly 150 may support other numbers of substrates, including but not limited to one substrate 107, three substrates 107, four substrates 107, six substrates 107, or eight substrates 107. Processing chamber 100 includes an upper window 116, such as a dome, located between cover 104 and processing volume 128.

[0026] The processing chamber 100 includes a lower window 115 located below the processing volume 128. One or more upper heat sources 106 are located above the processing volume 128 and the upper window 116. The one or more upper heat sources 106 can be radiant heat sources, such as lamps, for example, halogen lamps. The one or more upper heat sources 106 are located between the upper window 116 and the cover 104. The upper heat sources 106 can be positioned to promote uniform heating of the substrate 107. Below the processing volume 128 and the lower window 115, one or more lower heat sources 138 are also provided. The one or more lower heat sources 138 can be radiant heat sources, such as lamps, for example, halogen lamps. The lower heat sources 138 are located between the lower window 115 and the bottom surface 134 of the internal space 124. The lower heat sources 138 can be positioned to promote uniform heating of the substrate 107.

[0027] This disclosure assumes that other heat sources (other than or replacing luminaires) may be used as the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers may be used as the various heat sources described herein.

[0028] The upper window 116 and lower window 115 may be transparent to infrared radiation, for example, capable of transmitting at least 80% (e.g., at least 95%) of infrared radiation. The upper window 116 and lower window 115 may be made of quartz material (e.g., transparent quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window. The outer window support 194 supports the inner window 193 and is at least partially situated within a support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window. The outer window support 188 supports the inner window 187.

[0029] A substrate support assembly 119 is located within a processing volume 128. One or more gaskets 180 are located within the processing volume 128 and surround the substrate support assembly 119. These gaskets 180 help protect the chamber body 130 from the processing chemicals within the processing volume 128. The chamber body 130 is at least partially located between an upper window 116 and a lower window 115. These gaskets 180 are located between the processing volume 128 and the chamber body 130. These gaskets 180 include an upper gasket 181 and one or more lower gaskets 183.

[0030] The processing chamber 100 includes one or more gas injection channels 182 ( Figure 1 Multiple gas exhaust channels 172 are shown in the diagram. These channels are formed in the chamber body 130 and are in fluid communication with the processing volume 128. Figure 1 Multiple gas injection channels 182 (shown in the image) are formed in the chamber body 130, opposite one or more gas injection channels 182. One or more gas exhaust channels 172 are in fluid communication with the processing volume 128. Each of the one or more gas injection channels 182 and the one or more gas exhaust channels 172 is formed through one or more sidewalls of the chamber body 130 and through one or more gaskets 180 that line the one or more sidewalls of the chamber body 130.

[0031] Each gas injection channel 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 formed in one or more gas liner 180. Figure 1 (Multiple are shown in the image). One or more supply conduit systems are in fluid communication with one or more gas injection channels 182. Figure 1 In this system, an internal supply conduit system 121 and an external supply conduit system 122 are in fluid communication with a plurality of gas injection channels 182. The internal supply conduit system 121 includes an internal gas box 123 mounted on the chamber body 130 and in fluid communication with an internal set of gas injection channels 182. The external supply conduit system 122 includes a plurality of external gas boxes 117 mounted on the chamber body 130 and in fluid communication with an external set of gas injection channels 182. This disclosure is contemplated that various gas supply systems (e.g., supply conduit systems, gas injection channels, and / or other gas supply systems) may be used. Figure 1 (The air box shown).

[0032] The processing chamber 100 includes a chamber assembly 150. The chamber assembly 150 includes a plurality of preheating rings 111a-111d located outside the substrate 107, the substrate support 1032 and the plate 169. Figure 1Four preheating rings 111a-111d are shown. Other numbers of preheating rings 111 can be used (e.g., two or three). The chamber assembly 150 divides the processing volume into multiple flow layers 153. Figure 1 (Three flow layers are shown). In one or more embodiments, the chamber assembly 150 includes at least two (e.g., at least three) flow layers 153. One or more gas injection channels 182 are configured as multiple injection layers, such that each gas injection channel 182 corresponds to one of these injection layers. Each injection layer is aligned with a corresponding flow layer 153. Preheating rings 111a-111d are coupled to and / or at least partially supported by one or more gaskets 180. In one or more embodiments, each of the preheating rings 111a-111d includes a complete ring or one or more ring segments, such as C-shaped ring segments and / or multiple ring segments. One or more heating elements 1034 (multiple are shown) are placed (e.g., embedded in) a substrate support 1032. Heating elements 103 may include, for example, induced heaters, resistance heating wires, and / or solid-state heaters. Other heating elements are also considered.

[0033] The chamber assembly 150 includes an arcuate support 112. A substrate support 1032 supports one substrate 107, while the arcuate support 112 is configured to support the other substrate 107. The chamber assembly 150 also includes one or more support rod structures 1081 (multiple shown) for supporting the arcuate support 112, the substrate support 1032, the plate 169, and the second plate 171. The size and shape of the one or more support rod structures 1081 are adapted to pass through the substrate support 1032, through the plate 169, through the arcuate support 112, and extend to the second plate 171. In one or more embodiments, the substrate support 1032 includes a base, such as a heat absorber. In one or more embodiments, the substrate support 1032 includes a complete ring, or one or more ring segments, such as C-shaped ring segments and / or multiple ring segments. In this embodiment, the substrate support 1032 is arcuate.

[0034] The substrate support 1032, plate 169, and second plate 171 can be moved (e.g., up and down) by at least one of a plurality of flow layers 173 to align the substrate support 1032 and the arcuate support 112 with one or more first injection channels of the first flow layer 173 and one or more second injection channels of the second flow layer 173, respectively. For example, the substrate support 1032 can be moved from the first flow layer 173 (e.g., associated with the first preheating ring 111a) to the second flow layer 173 (e.g., associated with the second preheating ring 111b). These movements are further described below, for example with... Figures 3A-3E and Figure 10A-10D Related content.

[0035] During operation (e.g., during epitaxial deposition), one or more process gases P1 are supplied to the processing volume 128 via an external supply conduit system 122 and one or more gas injection channels 182. The one or more process gases P1 are supplied by one or more gas sources 196 having fluid communication with the one or more gas injection channels 182. Each gas injection channel 182 is configured to direct the one or more process gases P1 in a generally radially inward direction toward the chamber assembly 150. Thus, in one or more embodiments, the gas injection channel 182 may be part of a cross-flow gas injector. The flow rate of the one or more process gases P1 may be divided into at least some (e.g., two or more) flow layers 153. For at least the uppermost flow layer 153 (or a single flow layer 153—if a single flow layer 153 is used), the one or more process gases P1 may be guided along a streamlined flow path (using the second substrate 171) to reduce or eliminate sideflow from the uppermost substrate 107 (or a single substrate 107—if a single substrate 107 is used).

[0036] Processing chamber 100 includes an exhaust duct system 190. One or more process gases P1 can be discharged through exhaust gas openings formed in one or more gaskets 180, through exhaust gas passages formed in the chamber body 130, and then through an exhaust gas box 1091. One or more process gases P1 can flow from the exhaust gas box 1091 to an optional common exhaust box 1092, and then be discharged through ducts using one or more pump devices 197 (e.g., one or more vacuum pumps).

[0037] One or more process gases P1 may include, for example, purge gases, cleaning gases, and / or deposition gases. Deposition gases may include, for example, one or more reactive gases carried in one or more carrier gases. One or more reactive gases may include, for example, gases containing silicon and / or germanium (such as silane (SiH4), disilane (Si2H6), dichlorosilane (SiH2Cl2), and / or germanane (GeH4)), chlorine-containing etching gases (such as hydrochloric acid (HCl)), and / or doping gases (such as phosphorene (PH3) and / or diborane (B2H6)). One or more inert gases (e.g., purge gases and / or carrier gases) may include, for example, one or more argon (Ar), helium (He), nitrogen (N2), hydrochloric acid (HCl), and / or hydrogen (H2). In one or more embodiments, one or more process gases P1 include silicon (Si), germanium (Ge), and boron (B), and one or more process gases P1 are used to form a film containing silicon (Si), carbon (C), and phosphorus (P).

[0038] Inert gas P2 (e.g., purified gas) supplied from inert gas source 129 is introduced into the bottom region 105 of the internal space 124 through one or more lower gas inlets 184 formed on the side wall of the chamber body 130. Inert gas P2 may also flow through internal supply conduit system 121 and through plate 169 located between two substrates 107.

[0039] One or more lower gas inlets 184 are disposed below the height of one or more gas injection channels 182. If one or more gaskets 180 are used, portions of the one or more gaskets 180 may be located between the one or more gas injection channels 182 and the one or more lower gas inlets 184. The one or more lower gas inlets 184 are designed to guide inert gas P2 in a generally radially inward direction. The one or more lower gas inlets 184 may also be designed to guide inert gas P2 in an upward direction. During thin film formation, the substrate support assembly 119 is located at a position that facilitates the flow of inert gas P2 along the back side of the substrate support 1032. Inert gas P2 is discharged from the bottom region 105 and exits the processing chamber 100 through one or more lower gas exhaust channels 102 located on the other side of the processing volume 128 opposite to the one or more lower gas inlets 184.

[0040] The substrate support assembly 119 includes a first lifting frame 199 and a second lifting frame 198 at least partially surrounding the first lifting frame 199. The first lifting frame 199 includes a first arm 1021 coupled to the substrate support 1032, such that raising and lowering the first lifting frame 199 raises and lowers the substrate 107, the substrate support 1032, the second plate 171, and the plate 169. A plurality of lifting rods 189 are suspended from the substrate support 1032. Lowering the substrate support 1032 and / or raising the second lifting frame 198 causes the lifting rods 189 to contact the arm 1022 of the second lifting frame 198. Further lowering the first plate 1032 and / or raising the second lifting frame 198 causes the lifting rods 189 to contact the substrate 107 and / or the plate 169, thereby raising the substrate 107 and / or the plate 169. The bottom region 105 of the processing chamber 100 is located between the bottom surface 134 and the housing 1030. Figure 1 As shown, the lifting boom 189 can be configured to rest against and be lifted away from the boom 1022.

[0041] The first shaft 126 of the first lifting frame 199, the second shaft 125 of the second lifting frame 198, and a portion 151 of the lower window 115 pass through openings formed in the base 135 and bottom surface 134 of the chamber body 130. Each shaft 125, 126 is coupled to one or more respective motors 164 configured to independently lift, lower, and / or rotate the base plate 107 and plate 169 using the first lifting frame 199, and to independently lift and lower the lifting rod 189 using the second lifting frame 198. The first lifting frame 199 includes the first shaft 126 and multiple first arms 1021 configured to support the first plate 1032, the arcuate support 112, the plate 169, and the second plate 171.

[0042] The arc-shaped support 112 is part of the box 1030 supported by the first lifting frame 199 and is located in the processing volume 128. A plurality of injection channels 182 maintain fluid communication with the substrate support 1032, the plate 169 and the respective flow channels above the arc-shaped support 112.

[0043] The second lifting frame 198 includes a second shaft 125 and a plurality of second arms 1022 configured to interface with and support the lifting rod 189. A bellows assembly 158 surrounds and encloses portions of the shaft 125, 126 located outside the chamber body 130 to reduce or eliminate vacuum leakage outside the chamber body 130.

[0044] An opening 136 (substrate transfer opening) is formed through one or more sidewalls of the chamber body 130. This opening 136 allows for the transfer of the substrate 169 and / or substrate 107 from the substrate support 1032 and the arcuate support 112 into and out of, for example, into and out of the internal space 124. In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve to allow the substrate to pass through. The opening 136 in… Figure 1 and Figure 2 The center is displayed with a dotted line to improve visual clarity.

[0045] The processing chamber 100 may include one or more sensors 191, 192, 282, such as temperature sensors (e.g., optical pyrometers) or other metering sensors, which measure the temperature (or other parameters) within the processing chamber 100 (e.g., on the surfaces of the upper window 116, the first plate 1032, the second plate 171, the plate 169, the arcuate support 112, the preheating rings 111a-111d, and / or the substrate 107). One or more sensors 191, 192, 282 are located on the cover 104. (Displayed in...) Figure 2 One or more sensors 282 (e.g., cryometers) are located below the lower window 115. One or more sensors 282 may be located next to and / or above the base 135 of the chamber body 130.

[0046] In one or more embodiments, the upper sensors 191, 192 are positioned toward the top of the second plate 171 and / or the top of the fourth preheating ring 111d. In one or more embodiments, the side sensor 281 (e.g., a side temperature sensor) is positioned toward the substrate support 1032, the arcuate support 112, and / or the preheating rings 111a-111d. In one or more embodiments, one or more lower sensors 282 are positioned toward the bottom of the chamber assembly 150 (e.g., the lower surface of the substrate support 1032, the bottom of the plate 169, the bottom of the second plate 171, and / or the bottom of the first preheating ring 111a).

[0047] Processing chamber 100 includes a controller 1070 configured to control processing chamber 100 or its components. For example, controller 1070 may directly control the operation of components of processing chamber 100, or achieve this by controlling controllers associated with the components. In operation, controller 1070 enables data collection and feedback from the respective chambers to coordinate and control the performance of processing chamber 100.

[0048] The controller 1070 typically includes a central processing unit (CPU) 1071, memory 1072, and support circuitry 1073. The CPU 1071 can be any type of general-purpose processor capable of use in an industrial environment. The memory 1072, or non-transitory computer-readable medium, is accessible by the CPU 1071 and can be one or more of the following: random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of local or remote digital storage device. The support circuitry 1073 is coupled to the CPU 1071 and may include a cache, clock circuitry, input / output subsystems, power supply, etc.

[0049] The various methods and operations disclosed herein can be implemented under the control of a central processing unit (CPU) 1071, which executes computer instruction codes stored in memory 1072 (or memory of a specific processing chamber), for example, as a software program. According to the various methods and operations described herein, when the computer instruction codes are executed by the CPU 1071, the CPU 1071 controls the elements of the processing chamber 100 to operate. In one or more embodiments, memory 1072 (a non-transient computer-readable medium) contains instructions stored therein that, when executed, cause the methods and operations described herein to be performed. Controller 1070 can communicate with heat sources, gas sources, and / or vacuum pumps of the processing chamber 100 (e.g., to trigger the execution of multiple operations).

[0050] One or more substrate supports 1032, plate 169, second plate 171, and / or one or more pads 180 (such as upper pad 181 and / or one or more lower pads 183) are formed of one or more materials, including quartz (such as transparent quartz, e.g., clear quartz; opaque quartz, e.g., white quartz, gray quartz, and / or black quartz), silicon carbide (SiC), graphite coated with SiC and / or opaque quartz, and / or one or more ceramics (such as bauxite (aluminum oxide (Al2O3)), aluminum nitride (AlN), silicon nitride (Si3N4), boron nitride (BN), and / or boron carbide (B4C)). Other materials are also considered. In one or more embodiments, plate 169 comprises silicon carbide (SiC).

[0051] Figure 2 This is a schematic cross-sectional side view of the processing chamber 100 shown according to one or more embodiments. Figure 2 The cross-sectional view shown in the image is relative to... Figure 1 The cross-sectional view shown is rotated 55 degrees.

[0052] The processing chamber 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, or side lasers, etc.) located outside the processing volume 128. One or more second side heat sources 118b are located in the processing volume 128 relative to one or more first side heat sources 118a.

[0053] exist Figure 2 For visual clarity, preheating rings 111b-111d are not shown. In addition to one or more sensors 191, 192 located above processing volume 128 and above the second plate 171, processing chamber 100 may also include one or more sensors 281, such as temperature sensors (e.g., optical pyrometers) or other metering sensors, to measure the temperature (or other parameters) within processing chamber 100. If multiple windows 257 are used, these windows 257 can be positioned between or in the gaps formed therein of one or more pads 180 (e.g., upper pad 181 and / or one or more lower pads 183). One or more sensors 281 are side sensors (e.g., side pyrometers), located outside processing volume 128, above preheating rings 111a-111d (e.g. Figure 1 The outer side of (as shown), and the outer side of multiple windows 257. One or more sensors 281 may, for example, be radially aligned with the multiple windows 257, such as... Figure 2 As shown.

[0054] One or more side sensors 281 (e.g., one or more pyrometers) can be used to measure the temperature (or other parameters) within the processing volume 128 from various sides of the processing volume 128. The side sensors 281 are arranged in multiple sensor layers. Figure 2 (Two sensor layers are shown in the image). In one or more embodiments, the number of sensor layers is equal to the number of heat source layers. Each side sensor 281 may be horizontally oriented or may be oriented toward (e.g., downward at an angle) the substrate 107 and / or substrate support 112 of the corresponding layer of the housing 1030.

[0055] This disclosure takes into account that the side heat sources 118a, 118b, window 257 and / or side sensor 281 may be omitted.

[0056] Figures 3A-3E A schematic partial side cross-sectional view of the processing chamber 100 and gas circuit 300 during the substrate processing method is shown.

[0057] The gas circuit 300 includes a first flow controller 310, a first set of valves 311 and 312 in fluid communication with the first flow controller 310, and a first supply valve 313 and a first supply line 314 in fluid communication with the first flow controller 310. The first set of valves 311 and 312 are in fluid communication with a first set of injection channels 182a. The gas circuit 300 also includes a second flow controller 320, a second set of valves 321 and 322 in fluid communication with the second flow controller 320, and a second supply valve 323 and a second supply line 324 in fluid communication with the second flow controller 320. The second set of valves 321 and 322 alternates with the first set of valves 311 and 312. The second set of valves 321 and 322 is in fluid communication with a second set of injection channels 182b. The second set of injection channels 182b and the first set of injection channels 182a alternate across multiple flow layers. The gas circuit 300 includes a third flow controller 330, a valve 331 in fluid communication with the third flow controller 330, and a third supply valve 332 and a third supply line 333 in fluid communication with the third flow controller 330. In one or more embodiments, the flow controllers 310, 320, and 330 each include one or more mass flow controllers. In one or more embodiments, the flow controllers 310, 320, and 330 are flow proportional controllers (FRCs). The valve 331 is in fluid communication with a lower injection channel 182c located below the first set of injection channels 182a and the second set of injection channels 182b.

[0058] Gas circuit 300 includes a connecting valve 315 that has fluid communication between a first supply line 314 and a second supply line 324, and is located downstream of the first supply valve 313 and the second supply valve 323. A second connecting valve 325 has fluid communication between a third supply line 333 and the first supply line 314, and is located downstream of the first supply valve 313. A third connecting valve 335 has fluid communication between the third supply line 333 and the second supply line, and is located downstream of the second supply valve 323.

[0059] like Figure 3A As shown, the method includes flowing a first airflow into a first flow layer 153A of a processing chamber 100, and simultaneously flowing a second airflow into a second flow layer 153B of the processing chamber 100. The first flow layer 153A and the second flow layer 153B alternate with each other. The method also includes heating one or more substrates 107 positioned in the processing chamber 100. Figure 3A The display substrate 107 is in a first position (e.g., an upper position). In one or more embodiments, the one or more substrates 107 include a plurality of substrates 107 ( Figure 3A (Two are shown in the image). In one or more embodiments, the first gas flow includes a first reactant gas R1, and the second gas flow includes an inert gas G1. Figure 3A In this configuration, the first supply valve 313 and the first set of valves 311 and 312 are open to supply the first reactive gas R1 through the first supply line 314 and the first flow controller 310. The second supply valve 323 and the second connecting valve 325 are closed, while the third supply valve 332, valve 331, and the second set of valves 321 and 322 are open to supply the inert gas G1 through the third supply line 333 and the connecting line 326. Figure 3A The connecting valve 315 is closed. Figure 3A In the illustrated embodiment, the processing chamber 100 includes five arcuate supports 112a-112e and six preheating rings 111a-111f. Other quantities are also considered. The exhaust valve 391 is in fluid communication with one or more pump units 197.

[0060] The first set of flow layers 153a respectively correspond to the first sides of the plurality of substrates 107 when they are in the first position. Therefore, in one or more embodiments, the first reactive gas R1 treats the first sides of the plurality of substrates 107 respectively. For example, the first reactive gas R1 may form a layer, clean (e.g., pre-clean), or etch the first sides of the plurality of substrates 107 respectively. For example, the first reactive gas R1 may form a first layer 401 (e.g., ...) on the first sides of the plurality of substrates 107 respectively. Figure 4 (As shown).

[0061] like Figure 3BAs shown, the method includes moving one or more substrates 107 from a first position to a second position (e.g., a lower position). While a first gas flow (e.g., a first reactive gas R1) flows into a first set of flow layers 153a, one or more substrates 107 are removed from their respective first flow layers. When one or more substrates 107 are moved to the second position, a plate 169 and a second plate 171 respectively isolate the lower substrate 107 and the upper substrate 107 from the first gas flow (e.g., at least partially isolate them). In one or more embodiments, one or more substrates 107 are moved to the second position before the first gas flow (e.g., the first reactive gas R1) stabilizes, and then the first gas flow is stopped. Therefore, operating time can be reduced, yield can be increased, and gas effects (e.g., non-uniformity and non-selectivity due to gas residual time) can be mitigated. For example, a tail portion of the first reactive gas R1 can be discharged from the first set of flow layers 153a without depositing on one or more substrates 107. Because the impact of residual gas on substrate 107 is reduced, process parameters (e.g., pressure, temperature, flow rate, and / or gas concentration) can be optimized. Stabilization processes may include, for example, increasing and / or decreasing the pressure and / or temperature of the first gas flow. In one or more embodiments, the method includes stopping the flow of the first gas flow after the operation of removing one or more substrates 107 from the first set of flow layers 153a has begun.

[0062] like Figure 3C As shown, the method includes flowing a second reactive gas R2 into a second set of flow layers 153b when one or more substrates 107 are in a second position. The second set of flow layers 153b, when the substrates 107 are in the second position, respectively correspond to the first sides of the plurality of substrates 107, such that the second reactive gas R2 processes each substrate. Figure 3A The layer formed on the substrate 107. For example, the second reactive gas R2 can be formed, cleaned (e.g., pre-cleaned), or etched on the substrate 107. Figure 3A Each layer is formed in the substrate 107. As an example, the second reactant gas R2 can be formed in layers of multiple substrates 107 respectively. Figure 3A A second layer forms on top of the first reactant gas (R1). The composition of the second reactant gas R2 is different from that of the first reactant gas R1. Figure 3C In this process, the first supply valve 313 is closed to stop the first reaction gas R1, the second connection valve 325 is opened to supply inert gas G1 to the first flow layer 153a through the connection line 326, the third connection valve 335 is closed, and the second supply valve 323 is opened to supply the second reaction gas R2 through the second supply line 324 and the second set of valves 321 and 322.

[0063] like Figure 3DAs shown, the method includes moving one or more substrates 107. In one or more embodiments, the one or more substrates are moved from a second position to a first position (e.g., an upper position). While a second gas flow (e.g., a second reactive gas R2) flows into the second set of flow layers 153b, the one or more substrates 107 are moved away from their respective second flow layers of the second set of flow layers 153b. When the one or more substrates 107 are moved to the first position, substrate supports 1032 and plate 169 respectively isolate the lower substrate 107 and the upper substrate 107 from the second gas flow (e.g., at least partially isolate them). In one or more embodiments, the one or more substrates 107 are moved to the first position without waiting for the second gas flow (e.g., the second reactive gas R2) to stabilize before stopping the second gas flow. Stabilization may include, for example, adjusting the pressure and / or temperature of the second gas flow by increasing and / or decreasing. In one or more embodiments, the method includes stopping the flow of the second gas flow after moving the one or more substrates 107 away from the second set of flow layers 153b.

[0064] This disclosure considers that the arcuate support 112 supporting the upper substrate 107 can be replaced by a second substrate support (supporting the upper substrate 107) similar to the substrate support 1032. This disclosure also considers that, according to... Figure 3C The substrate 107 can be moved downward by a flow layer to isolate the upper and lower substrates 107 from the second reactive gas R2.

[0065] like Figure 3E As shown, the method includes simultaneously flowing a second gas flow (including inert gas G1) into a second flow layer 153B and a first flow layer 153A. Figure 3E In this process, the second supply valve 323 is closed to stop the second reactive gas R2, while the third connection valve 335 is opened to supply inert gas G1 to the second flow layer 153B via the connection line 326.

[0066] In one or more embodiments, the inert gas G1 includes a purifying gas. In one or more embodiments, the first reacting gas R1 and the second reacting gas R2 each comprise a deposition gas, a cleaning gas (e.g., for pre-cleaning the substrate 107 or cleaning elements of the processing chamber 100), and / or an etching gas. The cleaning gas may comprise plasma and / or atomic radicals. In one or more embodiments, the first reacting gas R1 is one of a deposition gas, an etching gas, or a cleaning gas, while the second reacting gas R2 is another of a deposition gas, an etching gas, or a cleaning gas.

[0067] This disclosure takes into account Figure 3C and 3D It is possible Figure 3A and 3B Previously carried out, Figure 3C and 3DThe reactive gas R2 is a pre-cleaning gas used to clean the substrate 107 (e.g., to remove oxides from the substrate 107), while Figure 3A and 3B The reactive gas R1 is a deposition gas used to deposit a layer on the cleaned substrate 107. The second reactive gas R2 used for etching and / or pre-cleaning may contain plasma and / or may be plasma-assisted. In one or more embodiments, the second reactive gas R2 contains atomic radicals, such as atomic hydrogen radicals and / or atomic argon radicals.

[0068] This disclosure takes into account the processing chamber 100 and / or Figures 3A-3E The method described above can be used to process a single substrate 107 in one step. For example, such as Figure 6 As shown, the second plate 171, the arc-shaped support 112, and the upper substrate 107 can be omitted, and one or more support rod structures 1081 can be shortened and extended into the plate 169. Alternatively, a third plate (similar to plate 169 and / or the second plate 171) can be used to replace the upper substrate 107 and / or the arc-shaped support 112. In such an embodiment, the first reactive gas R1 can flow into... Figure 3A and 3B The first flow layer 153a is a flow layer in which the second reacting gas R2 can flow in. Figure 3C and 3D The second group of flow layers 153b is a flow layer.

[0069] Figure 4 This is a schematic diagram of portions 401-410 of a substrate processing method according to one or more embodiments. The first cross-section 411 shows the relationship between pressure and time, and the second cross-section 412 shows the relationship between temperature and time.

[0070] The method includes a first deposition operation 401 (e.g., Figure 3A ), first heating operation 402 (e.g., Figure 3B ), first etch operation 403 (e.g., Figure 3C ), and the first cooling operation 404 (e.g., Figure 3D ), and the first purification operation 405 (e.g., Figure 3E ). Figures 3A-3E The method can be repeated. For example, Figure 4 The method may include a second deposition operation 406 (e.g., Figure 3A ), second heating operation 407 (e.g., Figure 3B ), second etching operation 408 (e.g., Figure 3C ), second cooling operation 409 (e.g., Figure 3D ), and the second purification operation 410 (e.g., Figure 3E ).

[0071] Figure 5 This is a schematic cross-sectional side view of a processing chamber 500 according to one or more embodiments. The processing chamber 500 and... Figure 1 The processing chamber 100 shown is similar to that shown, and includes one or more aspects, features, elements, operations and / or attributes thereof.

[0072] exist Figure 5 In the illustrated embodiment, the processing chamber 500 omits the lower heat source 138, the lower window 115, and the second lifting frame 198. The lifting rod 189 can rest against a base 135 of the chamber body 130. This base 135 can be made of a metallic material. For example, the base 135 can be made of stainless steel and / or aluminum. A support structure 520 (e.g., one or more pins connected to a plate) is operable to raise and lower plate 169 and / or the second plate 171. The support structure 520 can move independently of the first lifting frame 199, allowing plate 169 and / or the second plate 171 to be raised and lowered relative to the lower substrate 107 and / or the upper substrate 107.

[0073] exist Figure 5 In the embodiment shown, the preheating rings 111a-111d are omitted, and instead, one or more protrusions 531-534 (e.g., edges) of one or more gaskets 181, 183 extend inward to the housing 1030.

[0074] Figure 6 This is a schematic cross-sectional side view of a processing chamber 600 according to one or more embodiments. The processing chamber 600 and... Figure 1 The processing chamber 100 shown is similar to that shown, and includes one or more aspects, features, elements, operations and / or attributes thereof.

[0075] exist Figure 6 In the embodiment shown, the processing chamber 600 omits the second plate 171, the arcuate support 112, and the upper plate 107, and one or more support rod structures 1081 extend to the plate 169.

[0076] Figure 7 It is based on one or more implementation methods. Figure 5 A schematic enlarged partial view of the protrusion 532 of the lower liner 183 shown.

[0077] The sheet 169 includes a first protrusion 701 extending relative to a first outer surface 702 of the sheet 169, and a second protrusion 703 extending relative to a second outer surface 704 of the sheet 169. In one or more embodiments, the first protrusion 701 surrounds the first outer surface 702, and the second protrusion 703 surrounds the second outer surface 704.

[0078] The lower liner 183 has an internal dimension ID1 that is larger than the external dimension OD1 of the plate 169, defining a gap 709 between the internal dimension ID1 and the external dimension OD1. This gap 709 is less than 1.0 mm. In one or more embodiments, the gap 709 is less than 0.8 mm, for example, less than 0.5 mm. The lower liner 183 includes an inner surface 705 and one or more first flow openings 706 extending to the inner surface 705. The lower liner 183 also includes one or more second flow openings 707 extending to the inner surface 705 on a first side of the one or more first flow openings 706, and one or more third flow openings 708 extending to the inner surface 705 on a second side of the one or more first flow openings 706. Inert gas G1 is injected into the gap 709 through the one or more first flow openings 706, and inert gas G1 is discharged (e.g., pumped out) from the gap 709 through the one or more second flow openings 707 and the one or more third flow openings 708. One or more first flow openings 706 may be fluidly connected to an inert gas source 129 (e.g., through a third flow controller 330 and valve 331). One or more second flow openings 707 and one or more third flow openings 708 may be fluidly connected to one or more pump devices 197. In one or more embodiments, the inert gas G1 is a purified gas, such as nitrogen (N2) and / or hydrogen (H2). Flow openings 706, 707, and 708 may each comprise a plurality of flow openings extending radially from around the plate 169 and spaced circumferentially. By using flow openings 706-708 to allow inert gas G1 to flow into and out of a gap 709, the gap 709 may serve as a virtual seal between the gasket 183 and the plate 169.

[0079] The sheet material 169 is sized and shaped to be disposed within the inner surface 705 of the lower liner 183. The sheet material 169 includes at least one opaque outer surface. For example, the first outer surface 702 and / or the second outer surface 704 are opaque. The sheet material 169 has a solid cross-section along its outer dimension OD1.

[0080] The inert gas G1 in gap 709 helps prevent gas from flowing into gap 709 from the first chamber 711 above plate 169 and the second chamber 712 below plate 169. Gap 709 and the inert gas G1 therein can serve as a virtual seal between the first chamber 711 and the second chamber 713 (e.g., a non-contact seal between plate 169 and lower gasket 183, such as a dynamic seal). Gap 709 and the inert gas G1 therein can serve as a gas bearing between plate 169 and lower gasket 183 to facilitate movement of plate 169 relative to lower gasket 183. A third chamber can be located between upper substrate 107 (if used) and second plate 171 (if used). Gap 709, one or more first flow openings 706, one or more second flow openings 707, and one or more third flow openings 708 are part of a gas seal between substrate support 1032 and lower gasket 183. The current disclosure considers that gas sealing can be used between the substrate support 1032 and the lower gasket 183, the arcuate support 112 and the lower gasket 183, and / or between the second plate 171 and the upper gasket 181. The current disclosure considers that the substrate support 1032, the arcuate support 112, and / or the second plate 171 can each include a first protrusion (similar to first protrusion 701) and a second protrusion (similar to second protrusion 703)—as... Figure 5 As shown.

[0081] The first protrusion 701 and the second protrusion 703 are at least a portion of the outer portion of the sheet 169, the size and shape of which are adapted to span one or more first flow openings 706, one or more second flow openings 707, and one or more third flow openings 708. The interval S1 between the one or more second flow openings 707 and the one or more third flow openings 708 is less than the thickness T1 of the outer portion of the sheet 169. This disclosure contemplates various configurations of the outer portion of the sheet 169. For example, this disclosure contemplates that the first protrusion 701 and / or the second protrusion 703 may be omitted, and / or the sheet 169 may be thickened to include the first protrusion 701 and / or the second protrusion 703. This disclosure contemplates that the first protrusion 701 and / or the second protrusion 703 may be rectangular in shape (e.g., square in shape), such as... Figure 7As shown. This disclosure also contemplates that the first protrusion 701 and / or the second protrusion 703 may be at least partially circular and / or conical. For example, the sheet 169 may be gradually thickened from the center of the sheet 169 in a radially outward direction to form the first protrusion 701 and / or the second protrusion 703. Such subject matter described for the sheet 169 (e.g., thickening and / or gradual thickness) may be used in association with the substrate support 1032, the arcuate support 112, and / or the second sheet 171 (e.g., including and / or forming respective outer portions, respective first protrusions, and / or respective second protrusions). In one or more embodiments, an inert gas G1 is supplied to the gap 709 at a first pressure higher than atmospheric pressure (e.g., above 760 Torr).

[0082] Figure 8 It is shown according to one or more embodiments Figure 5 Enlarged schematic view of central axis 126 and base 135.

[0083] Shaft 126 passes through lift opening 815 of base 135. Lift opening 805 at least partially defines inner surface 805. The internal dimension ID1 of inner surface 805 is larger than the external dimension OD1 of shaft 126, thus forming a gap 809 between internal dimension ID1 and external dimension OD1. Gap 809 is located between shaft 126 and inner surface 805 of base 135. Gap 809 is less than 1.0 mm. In one or more embodiments, gap 809 is less than 0.8 mm, for example less than 0.5 mm. Base 135 includes one or more first flow openings 806 extending to inner surface 805, one or more second flow openings 807 extending to inner surface 805 on a first side of one or more first flow openings 806, and one or more third flow openings 808 extending to inner surface 805 on a second side of one or more first flow openings 806. Inert gas G1 is supplied to gap 809 through one or more first flow openings 706, and inert gas G1 is discharged (e.g., extracted) from gap 809 through one or more second flow openings 807 and one or more third flow openings 808. One or more first flow openings 806 may be fluidly connected to inert gas source 129 (e.g., via a third flow controller 330 and valve 331). One or more second flow openings 807 and one or more third flow openings 808 may be fluidly connected to one or more pump devices 197. Flow openings 806, 807, and 808 may each comprise a plurality of flow openings extending radially along shaft 126 and spaced apart from each other. This disclosure takes into account that gap 809 may be located between base 135 and the second shaft 125 of the second lifting frame 198 (if shaft 125 is used).

[0084] The inert gas G1 in the gap 809 helps prevent gas (e.g., atmospheric air) from flowing into the gap 809 from the bottom region 105 and the exterior 821 of the base 135. The gap 809 and the inert gas G1 therein can act as a virtual seal between the bottom region 105 and the exterior 821 (e.g., a seal that does not contact the base 135 and the shaft 126, such as a dynamic seal). The gap 809 and the inert gas G1 therein can act as a gas bearing between the shaft 126 and the base 135 to facilitate movement of the shaft 126 relative to the base 135. This disclosure suggests that magnetic forces (e.g., partial magnetic coupling) acting on the shaft 126 and / or the base 135 can act as a magnetic bearing to facilitate movement of the shaft 126 relative to the base 135. For example, the shaft 126 can move easily and quickly (reducing or eliminating friction) without the use of lubricant. The shaft 126 can reliably and accurately position the housing 1030, and the shaft 126 can be rapidly accelerated (reducing or eliminating noise) to quickly move the housing 1030 to, for example... Figures 3A-3E and / or Figure 10A-10D The position is shown. By using the gas seal between shaft 126 and base 135 to quickly move the shaft, operation time can be shortened, and the treated substrate and processing gas can be quickly sealed through the gas seal between housing 1030 and one or more gaskets 181, 183. Gap 809, one or more first flow openings 806, one or more second flow openings 807, and one or more third flow openings 808 are part of the gas seal between shaft 126 and base 135.

[0085] In one or more embodiments, inert gas G1 is supplied to gap 809 at a second pressure higher than the first pressure. In one or more embodiments, the second pressure is at least 10% higher than the first pressure.

[0086] This disclosure considers the possibility of using a magnetic levitation device in conjunction with shaft 126. For example, magnetic force can be used to lift, lower, and / or rotate shaft 126. The magnetic levitation device can be used with... Figure 7 The flow openings 706, 707, and 708 shown are used together. A magnetic levitation device can also replace... Figure 8 The flow openings 806, 807, and 808 shown in the image are used.

[0087] Figure 9 This is a schematic partial cross-sectional view of a semiconductor device structure 900 according to one or more embodiments. The semiconductor device structure 900 can be fabricated using one or more processing chambers and / or one or more methods described in this document.

[0088] Structure 900 includes fins 910 formed on a silicon substrate 901. The fins 910 include alternating silicon-germanium (SiGe) layers 911 and silicon (Si) layers 912, and a cap layer 915. Multiple silicon nitride (SiN) spacers 913 are disposed on both sides of each SiGe layer 911. Based on the subject matter described herein, the flatness, uniformity, and / or selectivity of structure 900 are considered to be improved. For example, the flatness of the concave surfaces 902 between the fins 910 and / or the outer surfaces of the silicon nitride (SiN) spacers 913 and / or the flatness of the Si layers 912 can be improved. Another example is that the merging of the fins 910 can be controlled.

[0089] Figure 10A-10D This is a schematic side cross-sectional view of the processing chamber 600 in the substrate processing method.

[0090] like Figure 10A As shown, the method includes flowing a first gas flow into a first flow layer 1053a of a processing chamber 600, and simultaneously flowing a second gas flow into a second flow layer 1053b of the processing chamber 600. In one or more embodiments, the first gas flow includes a first reactive gas R1, and the second gas flow includes an inert gas G1. The inert gas G1 may also flow into a third flow layer 1053c.

[0091] like Figure 10B As shown, the method includes moving one or more substrates 107 from a first position to a second position (e.g., a lower position). The substrate 107 is moved away from the first flow layer 1053a while a first gas flow (e.g., a first reactive gas R1) flows into the first flow layer 1053a. When one or more substrates 107 are moved to the second position, a plate 169 isolates the substrate 107 from the first gas flow (at least partially). In one or more embodiments, the substrate 107 is moved to the second position before the first gas flow (e.g., the first reactive gas R1) is stopped without waiting for it to stabilize. In one or more embodiments, the method includes stopping the flow of the first gas flow after the action of moving the substrate 107 away from the first flow layer 1053a begins. In one or more embodiments, when the substrate 107 reaches... Figure 10B The first airflow stops at the second position shown.

[0092] like Figure 10C As shown, the method includes flowing inert gas G1 into the first flow layer 1053a when the substrate 107 is in the second position.

[0093] like Figure 10DAs shown, the method includes moving a substrate 107. In one or more embodiments, the substrate 107 moves from a second position to a first position (e.g., an upper position). When the substrate 107 reaches the first position, a third gas flow (e.g., a second reactive gas R2) flows to a first flow layer 1053a. In one or more embodiments, the first reactive gas R1 is a first deposition gas for depositing a first layer (e.g., a silicon-germanium (SiGe) layer), and the second reactive gas R2 is a second deposition gas for depositing a second layer (e.g., a silicon (Si) layer) on the first layer.

[0094] exist Figure 10D Subsequently, substrate 107 can be moved to the second position without waiting for the third gas flow (e.g., the second reactive gas R2) to stabilize before stopping the second gas flow. The third gas flow can then be stopped, and inert gas G1 can flow to the first flow layer 1053a. Next, substrate 107 can be moved back to the first position, and... Figure 10A The above operations are then repeated. For example, the method can be repeated multiple times to deposit stacks of SiGe and Si layers in an alternating arrangement. After processing, substrate 107 can be moved downwards to align with the third flow layer 1053c, and substrate 107 can be removed using lifting rod 189 through opening 136. Opening 136 is at least partially aligned with the third flow layer 1053c.

[0095] This disclosure takes into account Figure 10D It is possible Figures 10A-10C Previously carried out. This disclosure takes into account the processing chamber 600 and / or Figure 10A-10D This method can be used to process multiple substrates 107 simultaneously. For example, such as... Figures 3A-3E As shown, a second plate 171, an arc-shaped support 112 and an upper base plate 107 can be added, and one or more support rod structures 1081 can be extended.

[0096] The benefits of this disclosure include modularity in processing applications (e.g., using a single processing chamber and / or a single gas circuit to form various device structures, such as complex structures, and / or perform various operations); uniform formation of strip and fin structures; formation of deep structures; higher thin film growth rates; enhanced gas activation; uniform thin film growth and / or etching; increased throughput; reduced operating time (e.g., reduced processing time); enhanced selectivity; reduced process formulation changes; and reduced chamber footprint. The benefits of this disclosure also include enhanced device performance; enhanced structural clarity (e.g., enhanced boundaries between deposited layers and / or sharp transitions from Si layers to SiGe layers); and thermal control and adjustability of the region. Other benefits include reduced effects of gas residues, rapid switching processes between relatively low operating times (e.g., gas stabilization times); and reduced chamber memory effects.

[0097] These benefits can facilitate the simultaneous processing of a single substrate and / or the batch processing of multiple substrates.

[0098] It is anticipated that one or more aspects disclosed herein can be combined. For example, processing chamber 100, controller 1070, gas circuit 300, Figures 3A-3E The method shown Figure 4 The method shown includes processing chamber 500 and processing chamber 600. Figure 7 The gas seal shown Figure 8 The gas seal, semiconductor element structure 900 shown, and / or Figure 10A-10D One or more aspects, features, elements, operations, and / or properties of the methods illustrated may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the benefits described above.

[0099] While the foregoing primarily pertains to embodiments of this disclosure, other further embodiments may be devised without departing from the basic scope, the scope of which is defined by the preceding claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: A chamber body, which at least partially defines a processing volume, includes: Multiple injection channels, formed within the chamber body and disposed in multiple flow layers, and One or more exhaust channels are formed in the chamber body; One or more heat sources, said one or more heat sources being operable to heat the processed volume; A substrate support is disposed in the processing volume; A plate, the plate being spaced apart from the substrate support, the substrate support and the plate being movable by at least one of the plurality of flow layers, such that the substrate support is aligned between one or more first injection channels of the first flow layer and one or more second injection channels of the second flow layer.

2. The processing chamber of claim 1, wherein the plate includes at least one opaque outer surface and the plate has a solid cross-section on the outer dimensions of the plate.

3. The processing chamber of claim 1, wherein the chamber body further comprises a liner that at least partially lines the inner metal body.

4. The processing chamber of claim 3, wherein the internal dimension of the liner is larger than the external dimension of the plate to define a gap between the internal dimension and the external dimension.

5. The processing chamber as claimed in claim 4, wherein the gap is less than 1.0 mm.

6. The processing chamber of claim 3, wherein the liner comprises: Inner surface; One or more first flow openings, the one or more first flow openings extending to the inner surface; One or more second flow openings, the one or more second flow openings extending to the inner surface on a first side of the one or more first flow openings; as well as One or more third flow openings, the one or more third flow openings extending to the inner surface on the second side of the one or more first flow openings.

7. The processing chamber as claimed in claim 1, wherein: The plate includes a first protrusion extending relative to a first outer surface of the plate; The one or more first flow openings are operable to allow gas to flow into the gap between the gasket and the plate; and The one or more second flow openings and the one or more third flow openings are operable to discharge the gas from the gap.

8. The processing chamber of claim 7, wherein the plate further includes a second protrusion extending relative to a second outer surface of the plate, wherein the first protrusion surrounds the first outer surface and the second protrusion surrounds the second outer surface.

9. The processing chamber of claim 1, further comprising a shaft extending through a lifting opening of a metal base of the processing chamber, wherein the shaft is coupled to the substrate support.

10. The processing chamber of claim 9, wherein the lifting opening at least partially defines the inner surface of the metal base, and the metal base comprises: One or more first flow openings, the one or more first flow openings extending to the inner surface; One or more second flow openings, the one or more second flow openings extending to the inner surface on a first side of the one or more first flow openings; as well as One or more third flow openings, the one or more third flow openings extending to the inner surface on the second side of the one or more first flow openings.

11. The processing chamber of claim 10, wherein the gap between the shaft and the inner surface of the metal base is less than 1.0 mm.

12. A chamber kit suitable for semiconductor manufacturing, the chamber kit comprising: Pad, the pad comprising: Inner surface, One or more first flow openings, said one or more first flow openings extending to the inner surface. One or more second flow openings, the one or more second flow openings extending to the inner surface on a first side of the one or more first flow openings, and One or more third flow openings, the one or more third flow openings extending to the inner surface on a second side of the one or more first flow openings; A sheet material, the sheet material being sized and shaped to be disposed within the inner surface of the liner, the sheet material including an outer region being sized and shaped to span the one or more first flow openings, the one or more second flow openings and the one or more third flow openings.

13. The chamber kit of claim 12, wherein the plate comprises at least one opaque outer surface.

14. The chamber assembly of claim 13, wherein the plate comprises silicon carbide (SiC) and the plate has a solid cross-section on the outer dimensions of the plate.

15. The chamber assembly of claim 12, wherein: The padding has an internal dimension that is larger than the external dimension of the sheet material, to define the gap between the internal dimension and the external dimension; The one or more first flow openings are operable to allow gas to flow into the gap; and The one or more second flow openings and the one or more third flow openings are operable to discharge the gas from the gap.

16. The chamber assembly of claim 15, wherein the gap is less than 1.0 mm.

17. The chamber assembly of claim 12, wherein the outer region of the plate comprises: A first protrusion extends relative to a first outer surface of the plate; as well as A second protrusion extends relative to a second outer surface of the plate, wherein the first protrusion covers the periphery of the first outer surface and the second protrusion covers the periphery of the second outer surface.

18. A substrate processing method, the method comprising: The first airflow flows into the first flow layer of the processing chamber and flows over the substrate; The second airflow flows into the second flow layer of the processing chamber and passes over the plate located above or below the substrate; Heating the substrate; and As the first airflow flows into the first flow layer, the substrate is moved away from the first flow layer.

19. The method of claim 18, wherein the first gas flow comprises a first reactive gas, the second gas flow comprises an inert gas, the movement removes the substrate from the first position and moves it to the second position, and the method further comprises: The inert gas is then introduced into the first flow layer.

20. The method of claim 18, further comprising: After the movement of the substrate is initiated, the flow of the first airflow is stopped.

Images