Triode electrical testing method, system, and storage medium for multiple testing stations

Abstract

This application relates to the technical field of electronic device testing, and discloses a method, system, and storage medium for electrical testing of transistors at multiple testing stations. The method includes: a feeding device conveys transistors from a first turntable to a second turntable, where the second turntable performs high-voltage testing; those that pass are sent to a third turntable, while those that fail are returned to the first turntable for a second conveying. After a first set number of tests, a second high-voltage test is performed; those that still fail are rejected by the third turntable. The third turntable then conveys transistors to a fourth turntable for atmospheric pressure testing; those that pass are discharged, while those that fail are returned to the third turntable for a second conveying. After a second set number of tests, a second atmospheric pressure test is performed; those that still fail are rejected by the third turntable. This application requires no additional equipment, achieving secondary testing on the existing production line, reducing misjudgments, ensuring continuous automated operation, and improving the accuracy and efficiency of mass production testing.

Description

Technical Field

[0001] This application relates to the technical field of electronic device testing, and in particular to a method, system and storage medium for electrical testing of transistors with multiple testing stations. Background Technology

[0002] Transistors, as core semiconductor devices, have three electrodes: emitter, base, and collector. Their core characteristic is the precise control of a larger collector current by a small base current, enabling current amplification or electronic switching functions. Based on differences in their internal semiconductor structure, transistors are mainly divided into two categories: NPN and PNP. With their efficient signal control and energy conversion capabilities, they are widely used in amplifier circuits, oscillator circuits, power control modules, communication equipment, and various electronic instruments. They are indispensable core components in the field of electronic technology, and their product quality directly determines the stability and reliability of downstream electronic equipment. Therefore, post-production electrical performance testing is crucial. Currently, after transistors roll off the mass production line, they must undergo two core electrical performance tests: high-voltage testing and atmospheric pressure testing, to ensure product qualification. The existing testing process has clearly defined steps: First, an automated robotic arm picks up each transistor to be tested and precisely places it into a carrier on a conveyor belt. The carrier's positioning structure ensures precise alignment between the transistor electrodes and the test contacts, preventing poor contact from affecting testing accuracy. Then, the conveyor belt carrier moves the transistors sequentially to the atmospheric pressure testing station according to a preset trajectory to complete the atmospheric pressure electrical parameter testing. After testing, the conveyor belt carrier continues to transport the transistors to the high-voltage testing station for high-voltage performance testing. After the entire testing process is completed, the control system determines whether the product is qualified based on the test data, and a sorting mechanism categorizes and unloads good and defective products, achieving automated integration of testing and sorting. However, existing transistor electrical testing solutions with multiple testing stations have significant drawbacks: after a transistor completes its first test, the testing system directly sorts products deemed unqualified into the defective product area. If secondary verification testing of these suspected unqualified products is required, the existing testing production line and inspection stations cannot be used for secondary testing; additional independent testing equipment or a dedicated secondary testing production line must be configured. Due to the lack of a mechanism for secondary verification on the original testing equipment, some products mistakenly judged as unqualified due to testing errors, poor contact, or other issues not related to the product's inherent quality cannot be effectively verified. Summary of the Invention

[0003] In order to enable timely secondary testing of products that fail the initial inspection, this application provides a transistor electrical testing method, system and storage medium with multiple testing stations.

[0004] Firstly, this application provides a transistor electrical testing method with multiple testing stations, employing the following technical solution: A transistor electrical testing method with multiple testing stations includes the following steps: The control feeding device feeds transistors to the first turntable, the first turntable feeds transistors to the second turntable, the second turntable performs high-voltage testing, the second turntable feeds transistors that have passed the high-voltage test to the third turntable; the third turntable feeds transistors to the fourth turntable for atmospheric pressure testing, and the fourth turntable discharges transistors that have passed the atmospheric pressure test through the discharge device. The second turntable returns transistors that fail the high-voltage test to the first turntable for high-voltage secondary transport. After the second turntable performs high-voltage tests on a first set number of transistors, it performs a second high-voltage test on the transistors transported for high-voltage secondary transport. If a transistor fails the second high-voltage test, it is transported to the third turntable, where it is rejected. The first set number is the sum of the remaining distance the transistor travels on the second turntable and the total distance it travels on the first turntable. The fourth turntable returns transistors that fail the atmospheric pressure test to the third turntable for a second atmospheric pressure transport. After the fourth turntable performs an atmospheric pressure test on a second set number of transistors, it performs a second atmospheric pressure test on the transistors transported for the second atmospheric pressure test. If a transistor fails the second atmospheric pressure test, it is transported to the third turntable, where it is rejected. The second set number is the sum of the remaining distance the transistor travels on the fourth turntable and the total distance it travels on the third turntable.

[0005] By adopting the above technical solution, transistors are fed to the first turntable by a controlled feeding device. The transistors are then transported from the first turntable to the second turntable, where they undergo high-voltage testing. For transistors that fail the high-voltage test, the second turntable returns them to the first turntable for a secondary high-voltage transport. Transistors whose remaining distance on the second turntable is equal to the sum of their total distance on the first turntable undergo high-voltage testing. This secondary high-voltage testing effectively avoids misjudgments caused by testing errors, poor contact, or other issues not related to product quality. The second turntable transports transistors that pass the high-voltage test to the third turntable, and then from the third turntable to the fourth turntable for atmospheric pressure testing. Transistors that fail the atmospheric pressure test are then... The transistor is returned to the third turntable via the fourth turntable for a secondary conveying under normal pressure. The transistor undergoes a secondary normal pressure test after passing the sum of its remaining distance on the fourth turntable and its total distance on the third turntable. This secondary normal pressure test facilitates timely verification of products that have been incorrectly identified during the normal pressure test. If a transistor fails either the high-voltage or normal-pressure secondary test, the third turntable rejects it. Transistors that pass both the high-voltage and normal-pressure secondary tests are discharged via the discharge device. This eliminates the need for separate testing equipment or a dedicated secondary testing production line; timely secondary testing of products that failed the initial test can be performed on the existing testing production line and inspection station, improving the accuracy of transistor mass production testing and maintaining automated integration between testing and sorting.

[0006] Optionally, the method further includes the following steps: If the transistor fails the high voltage test, when the transistor is conveyed to the feeding position from the second turntable to the third turntable, both the third and fourth turntables will pause conveying once. The transistor will continue to move on the second turntable until it is fed to the first turntable from the feeding position from the second turntable to the first turntable. When a transistor that needs to undergo secondary high-voltage testing passes through the feeding point of the feeding device to feed the first turntable, the feeding device pauses feeding once. If the transistor fails the normal pressure test, when the transistor is conveyed to the discharge position of the fourth turntable, the discharge device will pause the discharge once, and the transistor will continue to move on the fourth turntable until it is fed to the third turntable from the feed position of the fourth turntable. When a transistor requiring secondary atmospheric pressure testing is on the third turntable, and it passes the feeding point from the second turntable to the third turntable, the second turntable pauses its feeding once.

[0007] By adopting the above technical solution, through the precise pause operation of the third turntable, the fourth turntable, the feeding device, the discharging device, and the second turntable, it is ensured that transistors that fail the high-pressure or normal-pressure test can smoothly return to the corresponding turntable for secondary conveying and testing. This avoids interference between products undergoing secondary testing and products in normal circulation, maintains the continuous automated operation of the testing production line, reduces the impact of secondary testing on the production rhythm, further improves the overall efficiency of product testing and production, facilitates the automated connection between the secondary testing process and the original production line, and reduces the omission of misjudged products for review.

[0008] Optionally, the step of pausing delivery may also include the following steps: When the second turntable pauses its conveying, the transistor at the high-voltage test station is subjected to a second high-voltage test. The electrical parameters of the second high-voltage test are lower than those of the transistor during the first high-voltage test.

[0009] By adopting the above technical solution and reducing the electrical parameters of the secondary high-voltage test, it is possible to accurately identify non-product quality issues that caused the initial high-voltage test. In conjunction with the timing of the pause of the second turntable, the judgment criteria for the secondary high-voltage test can be refined without interfering with the normal operation of the production line, which helps to reduce product losses caused by misjudgment.

[0010] Optionally, the method further includes the following steps: If the transistor fails the high-voltage test, when the transistor is conveyed to the feeding position from the second turntable to the third turntable, before the third and fourth turntables convey the next transistor, the feeding device, the first turntable, and the second turntable will add one conveying operation, and the increased conveying speed will be at least twice the speed without the increased conveying operation; wherein, the timestamp of the next conveying operation after the increased conveying operation remains unchanged. The transistor continues to move on the second turntable until it is fed to the first turntable from the feed point of the second turntable to the first turntable. When a transistor requiring secondary high-voltage testing passes through the feeding point of the feeding device to the first turntable, before the feeding device conveys the next transistor, the first, second, third, and fourth turntables and the discharging device add one more conveying operation, with the increased conveying speed being at least twice the speed without the increased conveying operation; wherein, the timestamp of the next conveying operation after the increased conveying operation of the first, second, third, fourth turntables and the discharging device remains unchanged; If the transistor fails the atmospheric pressure test, when the transistor is conveyed to the discharge position of the fourth turntable towards the discharge device, the feeding device, the first turntable, the second turntable, the third turntable, and the fourth turntable will perform an additional conveying operation. The transistor continues to move on the fourth turntable until it is fed to the third turntable from the feed point of the fourth turntable. When the transistor that needs to be tested under secondary atmospheric pressure is on the third turntable, when it passes the feeding point from the second turntable to the third turntable, the third turntable, the fourth turntable and the discharge device will add one more conveying step. Among them, the number of times the feeding device, the first turntable, the second turntable, the third turntable, the fourth turntable, and the discharging device increase the conveying instantaneously is no more than one; the time consumed for high-pressure detection and the time consumed for normal-pressure detection are both no more than half of the time interval without increasing the conveying.

[0011] By adopting the above technical solution, by setting the conveying speed to be doubled or more, keeping the next conveying timestamp of each device unchanged, and controlling the instantaneous increase in the number of conveying times to not exceed one, combined with the design that the detection time does not exceed half of the non-increased conveying time interval, the secondary detection products are connected in an orderly manner with the normally flowing products, without disrupting the original rhythm of the production line, shortening the time occupied by secondary detection, avoiding production delays caused by secondary detection, and improving the real-time performance of mass production detection and production.

[0012] Optionally, the step of increasing the conveying process may also include the following steps: When the second turntable increases the conveying capacity, a high-voltage test is performed on the transistor located at the high-voltage test station. The electrical parameters of the high-voltage test are at their maximum values. When the fourth turntable increases the conveying capacity, the transistors at the atmospheric pressure test station are subjected to atmospheric pressure testing. The electrical parameters of the atmospheric pressure test are at their maximum values.

[0013] By adopting the above technical solution, the second and fourth turntables are tested with maximum electrical parameters during conveying to check the product's extreme performance.

[0014] Optionally, the secondary high-voltage testing process includes the following sub-steps: The number of secondary high-voltage tests is calculated within a preset time period as the first count. The first failure value is calculated based on the first count and the preset first failure count. The electrical parameters of the high-voltage test are adjusted according to the positive correlation of the first failure value. The electrical parameter values ​​are not greater than the preset maximum parameter values.

[0015] By adopting the above technical solution, the first non-compliance value is obtained based on the first number of times and the first number of non-compliance within a set time period. The high-voltage test electrical parameters are positively correlated and do not exceed the maximum limit, which is consistent with the actual quality of the product and helps to reduce misjudgments caused by problems other than the product itself.

[0016] Optionally, the secondary atmospheric pressure test step includes the following sub-steps: The number of times the second atmospheric pressure test is calculated within a preset time period. The second failure value is calculated based on the second failure value and the preset second failure number. The frequency value of the electrical parameters of the atmospheric pressure test is adjusted according to the positive correlation of the second failure value. The frequency value of the electrical parameters shall not be greater than the preset maximum frequency value.

[0017] By adopting the above technical solution, the second non-compliance value is calculated based on the second number of times and the second number of non-compliance times within a set time period. The frequency of the electrical parameters of the normal pressure test is positively adjusted without exceeding the maximum limit, which is in line with the actual situation of the product.

[0018] Optionally, the method further includes the following steps: The number of times the second high-pressure test is calculated within a preset time period is the first count. The first failure value is calculated based on the first count and the preset first failure count. The number of times the second normal pressure test is calculated is the second count. The second failure value is calculated based on the second count and the preset second failure count. The average non-conforming value is calculated by weighting the first non-conforming value and the second non-conforming value. The test time of high pressure test or normal pressure test is positively correlated with the average non-conforming value. Record the first set of timestamps for the secondary high-pressure test and the second set of timestamps for the secondary normal-pressure test within a set time period. Calculate the first time distribution uniformity based on the first timetamp set and the second time distribution uniformity based on the second timetamp set. The ratio of the first time distribution uniformity to the second time distribution uniformity is calculated as the time distribution ratio. The weighting coefficient of the first non-conforming value is adjusted according to the positive correlation of the time distribution ratio, and the weighting coefficient of the second non-conforming value is adjusted according to the negative correlation of the time distribution ratio.

[0019] By adopting the above technical solution, the test time and weighting coefficient are adjusted by calculating the first non-conforming value, the second non-conforming value, the average non-conforming value, and the time distribution ratio, so as to match the actual testing conditions, reduce misjudgments caused by non-product-related problems, and avoid disrupting the original flow of the production line, allowing testing and production to be connected in an orderly manner.

[0020] Secondly, this application provides a transistor electrical testing system with multiple testing stations, employing the following technical solution: A transistor electrical testing system with multiple testing stations includes a processor, wherein the processor executes the steps of the transistor electrical testing method with multiple testing stations as described in any one of the preceding claims.

[0021] Thirdly, this application provides a storage medium, which adopts the following technical solution: A storage medium storing a program, which, when executed by a processor, implements the steps of the transistor electrical testing method with multiple testing stations as described above.

[0022] In summary, this application includes at least one of the following beneficial technical effects: by reusing existing turntables and inspection stations, secondary inspection of products that fail the first inspection can be achieved without additional equipment or production lines. Combined with precise pause / acceleration timing control and adaptive parameter adjustment, the error rate of high-pressure and normal-pressure inspections can be effectively reduced, ensuring continuous automated operation of the production line, reducing the impact of secondary inspections on the production rhythm, while reducing hardware modification and maintenance costs, improving the accuracy, efficiency and batch consistency of transistor mass production inspections, and adapting to the inspection needs of different types and power transistors. Attached Figure Description

[0023] Figure 1 This is a step diagram of a transistor electrical testing method with multiple testing stations.

[0024] Figure 2 This is a schematic diagram of the material transfer structure of a transistor electrical testing system with multiple testing stations. The dashed lines represent the transfer path of qualified products.

[0025] Figure 3 This is a schematic diagram of the material transfer structure of a transistor electrical testing system with multiple testing stations. The dashed lines represent the product transfer path that requires secondary high-voltage testing.

[0026] Figure 4 This is a schematic diagram of the material transfer structure of a transistor electrical testing system with multiple testing stations. The dashed line represents the product transfer path that requires secondary atmospheric pressure testing.

[0027] Reference numerals: 1. First turntable; 2. Second turntable; 3. Third turntable; 4. Fourth turntable. Detailed Implementation

[0028] The embodiments of this application are described in detail below, and examples of the embodiments are shown in the accompanying drawings.

[0029] In the description of this specification, the references to "certain embodiments," "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples" refer to specific features, structures, materials, or characteristics described in connection with the described embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0030] This application discloses a transistor electrical testing method with multiple testing stations, referring to... Figure 1, the method is implemented based on an automated test production line composed of a feeding device, a first turntable, a second turntable, a third turntable, a fourth turntable and a discharging device, wherein the second turntable is provided with a high-voltage detection station, the third turntable is provided with a transfer and rejecting station, and the fourth turntable is provided with a normal-pressure detection station; each turntable is driven by a servo motor, the rotating speed can be accurately adjusted through a PLC controller, and the action coordination of each device is uniformly controlled by an industrial controller, comprising the following steps: With reference to Figures 2-4 , the industrial controller sends a control instruction to the feeding device, which is a vibrating plate feeder for example, the feeding device transports triodes to the stations of the first turntable at a preset beat of 1 piece per second, and the first turntable rotates at a constant speed, for example 60 revolutions per minute, to sequentially transport the triodes to the docking station with the second turntable, so as to complete the transfer of the triodes. The second turntable is equipped with a high-voltage detection module, such as a megohmmeter and a high-voltage signal generator. When a triode arrives at the high-voltage detection station of the second turntable, the high-voltage detection module starts detection, applies preset high-voltage electrical parameters, such as 1000V DC voltage, and judges that the triode is qualified if the detected insulation resistance is ≥100MΩ, and feeds the detection result back to the industrial controller. The industrial controller controls the rotation direction of the second turntable according to the detection result: for triodes that have passed the high-voltage detection, the second turntable continues to rotate to transport them to the docking station with the third turntable; for triodes that have not passed the high-voltage detection, their station numbers and detection results are temporarily stored, and a secondary transportation process will be executed later.

[0031] After receiving the qualified triodes from the second turntable, the third turntable rotates at a rotating speed matching that of the second turntable, for example 60 revolutions per minute, to transport the triodes to the docking station with the fourth turntable. The fourth turntable is equipped with a normal-pressure detection module, such as a multi-channel transistor tester, which applies preset normal-pressure electrical parameters, such as 5V power supply voltage, tests the normal-pressure electrical performance of the triodes by judging that the triode is qualified if the amplification factor β is within the range of 50-200. Triodes that have passed the normal-pressure detection are transported by the fourth turntable to the docking station with the discharging device, and the discharging device, such as a belt conveyor, transports the qualified products to a finished product bin; for triodes that have not passed the normal-pressure detection, the industrial controller records their station information, and a normal-pressure secondary transportation process will be executed later.

[0032] For transistors that fail the initial high-voltage test, the industrial controller calculates a first set number, specifically the sum of the remaining distance the transistor travels from its current station on the second turntable to the docking station on the first turntable (corresponding to the number of stations the turntable rotates, e.g., 8 stations) and the total distance the transistor travels from its docking station on the first turntable to the docking station on the second turntable (corresponding to the number of stations the turntable rotates, e.g., 12 stations). The first set number is 20. The second turntable continues to perform high-voltage tests on subsequent normally circulating transistors. After a total of 20 transistors have been tested, the industrial controller controls the second turntable to transport the previously failed transistors to the docking station with the first turntable, achieving a secondary high-voltage transport. When the transistor is transported again from the first turntable to the high-voltage test station on the second turntable, the second turntable initiates a secondary high-voltage test with the same parameters as the initial high-voltage test. If the secondary test still fails, the industrial controller controls the second turntable to transport it to the third turntable, and the rejection device on the third turntable is activated. The rejection device, such as a pneumatic pusher, removes unqualified transistors to the waste bin; if the second inspection is passed, the transistors are conveyed to the third turntable according to the normal process.

[0033] For transistors that fail the initial atmospheric pressure test, the industrial controller calculates a second preset number, which is the sum of the remaining distance (e.g., 6 stations) from the current station on the fourth turntable to the docking station on the third turntable, and the total distance (e.g., 10 stations) from the docking station on the second turntable to the docking station on the fourth turntable on the third turntable. This second preset number is 16. The fourth turntable continues to perform atmospheric pressure tests on subsequent normally flowing transistors. After a total of 16 transistors have been tested, the transistors that failed the test are transported to the third turntable for a secondary atmospheric pressure transport. When the transistor is transported again from the third turntable to the atmospheric pressure test station on the fourth turntable, a secondary atmospheric pressure test is initiated. If it still fails, it is rejected by the rejection device on the third turntable; if it passes, it is discharged by the discharge device.

[0034] Through the above process, there is no need to configure additional independent secondary testing equipment or production lines. The initial test and secondary verification can be completed on the four turntables and testing stations of the original production line. This effectively avoids misjudgments caused by non-product quality issues such as test errors and poor contact, improves the accuracy of transistor mass production testing, and maintains automated connection between testing and sorting to ensure production efficiency.

[0035] To ensure that transistors that fail the test return smoothly to their corresponding turntables and avoid interference with normally circulating products, this embodiment adds a precise pause control step to the core process, as detailed below: When a transistor that fails the high-voltage test is conveyed to the feeding positions of the second and third turntables, the industrial controller sends a pause command to the servo motors of the third and fourth turntables. The two turntables pause rotation once, with the pause duration matching the single-station cycle time (e.g., 0.5 seconds). The defective transistor continues to rotate on the second turntable until it reaches the feeding position between the second and first turntables. There, the turntable's pushing mechanism transfers it to the first turntable, completing the high-voltage secondary conveying return. When the transistor requiring secondary high-voltage testing rotates with the first turntable to the feeding position of the loading device, the industrial controller controls the loading device to pause feeding once to prevent collisions between the new material and the secondary conveyed transistor, ensuring its smooth entry into the testing position of the second turntable.

[0036] When a transistor that fails the atmospheric pressure test is conveyed to the discharge position of the fourth turntable and the discharge device, the industrial controller controls the discharge device to pause once for 0.5 seconds. The defective transistor continues to rotate on the fourth turntable until it reaches the feeding point of the fourth and third turntables, where it is transferred to the third turntable, completing the return of the second atmospheric pressure conveying. When the transistor requiring a second atmospheric pressure test rotates with the third turntable to the feeding point of the second turntable, the industrial controller controls the second turntable to pause once to prevent interference between the new material on the second turntable and the second-conveyed transistor, ensuring its smooth entry into the testing station of the fourth turntable.

[0037] Furthermore, when the second turntable performs a pause operation, the detection module at its high-voltage testing station simultaneously initiates a second high-voltage test. The electrical parameters of this test (e.g., 800V DC voltage) are lower than the parameters of the initial high-voltage test (1000V DC voltage). By reducing the test parameters, non-product quality issues such as poor contact or instantaneous voltage fluctuations that occurred during the initial test can be accurately identified. This refines the judgment criteria for the secondary high-voltage test without interfering with the normal operation of the production line, reducing product losses caused by misjudgments.

[0038] This optional embodiment ensures the orderly connection between products undergoing secondary inspection and those in normal circulation by precisely pausing and controlling each turntable, feeding device, and discharging device, maintaining the continuous automated operation of the production line, reducing the impact of secondary inspection on the production rhythm, and further improving the overall efficiency of inspection and production.

[0039] To further shorten the time required for secondary inspection and avoid delays in production, this embodiment uses accelerated conveying to replace some of the pause operations. The specific method includes the following steps: When a transistor that fails the high-voltage test is conveyed to the feeding positions of the second and third turntables, before the third and fourth turntables convey the next transistor, the industrial controller controls the servo motors of the feeding device, the first turntable, and the second turntable to accelerate, adding one more conveying cycle. The accelerated speed is at least twice the normal speed; for example, if the normal speed is 60 rpm, the accelerated speed is 120 rpm. After the accelerated conveying is completed, the timestamp for the next conveying cycle remains unchanged. For example, if the original plan was to convey the next product at the 1st second, and the accelerated conveying is completed within 0.5 seconds, the next conveying cycle will still be executed at the 1st second. The defective transistor continues to rotate on the second turntable until it reaches the feeding position of the first turntable and is transferred to the first turntable. When the transistor requiring secondary high-voltage testing passes the feeding device and the feeding area of ​​the first turntable, before the feeding device conveys the next transistor, the industrial controller controls the first turntable, the second turntable, the third turntable, the fourth turntable and the discharging device to synchronously accelerate the conveying once. The acceleration speed is twice the normal speed, and the timestamp of the next conveying remains unchanged, ensuring that it smoothly enters the testing station of the second turntable.

[0040] When a transistor that fails the atmospheric pressure test is conveyed to the discharge position of the fourth turntable and the discharge device, the industrial controller controls the feeding device, the first turntable, the second turntable, the third turntable, and the fourth turntable to accelerate once, at twice the normal speed. The defective transistor continues to rotate on the fourth turntable until it is transferred to the third turntable. When the transistor requiring a second atmospheric pressure test passes the feeding point of the second turntable on the third turntable, the industrial controller controls the third turntable, the fourth turntable, and the discharge device to accelerate once, ensuring that it smoothly enters the testing position of the fourth turntable.

[0041] Specifically, the feeding device, each turntable, and the discharging device shall not increase the number of conveying operations by more than one time in an instant (such as within one millisecond) to avoid overloading the mechanical structure. Simultaneously, the time taken for a single high-pressure test and a normal-pressure test (e.g., 0.2 seconds) shall not exceed half the time interval without increased conveying (e.g., 0.5 seconds) to ensure the complete execution of the testing process during accelerated conveying. If the number of consecutive non-conforming products exceeds two, all turntables shall be suspended for maintenance; alternatively, the preceding workstation and the turntable shall be suspended, while other workstations shall continue operating.

[0042] Furthermore, when the second turntable performs an additional conveying operation, its high-voltage test station's detection module performs a high-voltage test with preset maximum electrical parameters, such as 1200V DC voltage; when the fourth turntable adds conveying, its normal pressure test station's detection module performs a normal pressure test with maximum electrical parameters, such as 8V power supply voltage. By testing the extreme parameters, potential performance defects of the product are identified, and the comprehensiveness of the testing is improved.

[0043] This optional embodiment achieves rapid return and verification of products undergoing secondary inspection without disrupting the original rhythm of the production line by accelerating delivery and maintaining timestamps, thereby improving the real-time performance of mass production inspection and avoiding production delays caused by secondary inspection.

[0044] To ensure that the testing parameters accurately reflect the actual quality of the product and reduce misjudgments, this embodiment adds a parameter adaptive adjustment step, which is implemented as follows: High-voltage test parameter adjustment: A preset time period, such as 2 hours, is used. Within this time period, the industrial controller counts the number of secondary high-voltage tests, recorded as the first count. The number of times the secondary tests fail is recorded as the first failure count. The first failure value is calculated as: First failure count / First count. Based on the first failure value, the electrical parameters of the high-voltage test, such as the voltage amplitude, are adjusted, ensuring that the adjusted parameters do not exceed the preset maximum parameter value, such as 1500V.

[0045] The statistical time period is set to 2 hours to ensure that the sample size for secondary high-voltage testing in a single statistical session is ≥1000 pieces, avoiding the influence of random errors. The constraint range of high-voltage test electrical parameters (voltage amplitude) is 800V~1500V, with 800V as the minimum protection voltage to prevent missed insulation defects and 1500V as the maximum allowable voltage to prevent transistor breakdown. Simultaneously, the first non-compliance value is divided into 4 fixed intervals, each interval corresponding to a unique fixed high-voltage test voltage, forming a matching relationship, as follows: 0 ≤ First non-compliance value < 0.005 indicates a low non-compliance rate, corresponding to a high-voltage test voltage of 1200V. This range indicates that the current secondary high-voltage test non-compliance rate is extremely low, which is likely due to the original test voltage being too lenient and not fully investigating potential insulation defects. Therefore, a higher fixed voltage is matched to increase the test rigor. 0.005≤First non-compliance value≤0.02 is a reasonable non-compliance rate. The corresponding high voltage test voltage is 1000V. This range is the preset target qualified range, indicating that the current test voltage has the highest matching degree with the actual quality of the transistor. No adjustment is required, and the fixed reference voltage should be maintained. 0.02 < first non-compliance value ≤ 0.04 indicates a high non-compliance rate. This range corresponds to a high voltage test voltage of 900V. This indicates that the non-compliance rate is too high. It may be that the original test voltage is too strict. For example, a misjudgment may be caused by a momentary failure of pin contact. Therefore, a lower fixed voltage is matched to reduce misjudgments that are not related to product quality issues. The first non-compliance value > 0.04 indicates an extremely high non-compliance rate. This corresponds to a high voltage test voltage of 800V. This range indicates that the non-compliance rate is far beyond the normal range, which may be due to excessively high test voltage or equipment malfunction. Therefore, the minimum fixed voltage is matched, and the high voltage detection module self-test is triggered to verify the accuracy of the high voltage signal generator.

[0046] Adjustment of atmospheric pressure test parameters: Similarly, preset the time period, such as 2 hours, count the number of times the second atmospheric pressure test is performed, and record it as the second number. Count the number of times the second test fails, and record it as the second failure number. Calculate the second failure value = second failure number / second number. Adjust the frequency value of the electrical parameters of the atmospheric pressure test according to the positive correlation of the second failure value, such as the test signal frequency. The adjusted frequency should not be greater than the preset maximum frequency value, such as 1MHz.

[0047] The statistical time period is set to 2 hours to ensure that the sample size for a single secondary atmospheric pressure test is ≥1000 pieces, avoiding random errors. The constrained range of the electrical parameters (signal frequency) for atmospheric pressure testing is 300kHz~1MHz, with 300kHz as the minimum protection frequency to ensure the stability of the test signal and 1MHz as the maximum allowable frequency to improve testing efficiency. The second non-conforming value is divided into 4 fixed intervals, each interval corresponding to a unique fixed atmospheric pressure test frequency, forming a matching relationship, as follows: 0 ≤ second non-conforming value < 0.008 indicates a low non-conforming rate, corresponding to an atmospheric pressure test frequency of 800kHz. This range indicates that the second atmospheric pressure test non-conforming rate is extremely low. The original test frequency is too conservative, so a higher fixed frequency is matched to improve the mass production test efficiency without affecting the test accuracy. 0.008≤Second non-compliance value≤0.02 is a reasonable non-compliance rate, corresponding to a normal pressure test frequency of 500kHz. This range is the preset target adaptation range, indicating that the current frequency matches the transistor's normal pressure performance (such as amplification factor β, saturation voltage drop) to the best, and a fixed reference frequency is maintained. 0.02 < second non-conforming value ≤ 0.04 indicates a high non-conforming rate, corresponding to a normal pressure test frequency of 400kHz. This range indicates a high non-conforming rate, which may be due to high-frequency signal interference or momentary instability of pin contact leading to misjudgment. Matching a lower fixed frequency enhances the signal anti-interference capability and reduces misjudgment of non-product quality issues. The second non-compliance value > 0.04 indicates an extremely high non-compliance rate, corresponding to a normal pressure test frequency of 300kHz. This range indicates that the non-compliance rate is far beyond the normal range, which may be due to excessively high frequency causing detection distortion or abnormality of the normal pressure module. Match the minimum fixed frequency and trigger the calibration of the normal pressure detection module, such as verifying signal filtering and test current accuracy.

[0048] Comprehensive adjustment and optimization: The industrial controller synchronously calculates the first and second non-conforming values ​​within a set time period, and calculates the average non-conforming value = (first non-conforming value × weighting coefficient 1 + second non-conforming value × weighting coefficient 2) / (weighting coefficient 1 + weighting coefficient 2). Based on the positive correlation of the average non-conforming value, the test time of high-pressure test or normal-pressure test is adjusted. The specific matching relationship is as follows: 0 ≤ average defect value < 0.01 indicates a low overall defect rate. The test time for high pressure or normal pressure testing is 0.15s. A low overall defect rate indicates that the test parameters are too lenient. Matching a shorter test time can improve mass production efficiency. A reasonable overall failure rate is 0.01 ≤ average non-conforming value ≤ 0.025. The test time for high pressure or normal pressure test is 0.2s. The target adaptation range achieves the optimal balance between detection accuracy and efficiency, and the initial test time is maintained. If the average non-compliance value is 0.025 and the average non-compliance value is ≤0.04, the overall non-compliance rate is relatively high. The test time for high pressure test or normal pressure test is 0.3s. The overall non-compliance rate is too high. The test time needs to be extended to ensure sufficient inspection and reduce misjudgment. An average non-compliance value > 0.04 indicates an extremely high overall non-compliance rate. The test time for high-pressure or normal-pressure testing is 0.4s, which is abnormally high. This results in a longer test time and triggers a full inspection of the entire testing module status.

[0049] Simultaneously, the first set of timestamps from the secondary high-pressure tests and the second set of timestamps from the secondary normal-pressure tests are recorded. The uniformity of the first and second time distributions is calculated using variance; a smaller variance indicates higher uniformity. The time distribution ratio is calculated as: first time distribution uniformity / second time distribution uniformity. The weighting coefficient 1 for the first non-conforming value is adjusted based on a positive correlation with the time distribution ratio, and the weighting coefficient 2 for the second non-conforming value is adjusted based on a negative correlation. The specific matching relationship is as follows: A time distribution ratio > 1.2 ensures more uniform high-voltage detection. Weighting coefficients 1 and 2 are 0.6 and 0.4 respectively, resulting in a more stable high-voltage detection rhythm. Increasing weighting coefficient 1 makes high-voltage parameter adjustment more dominant. The time distribution ratio is 0.8 ≤ time distribution ratio ≤ 1.2, indicating that the uniformity of the two is close. The weight coefficient 1 and weight coefficient 2 are 0.5 and 0.5 respectively, which means that the stability of the two detection links is balanced, the initial weights are maintained, and the adjustment is fair. A time distribution ratio of <0.8 ensures more uniform atmospheric pressure detection. Weighting coefficients 1 and 2 are 0.4 and 0.6 respectively, resulting in a more stable atmospheric pressure detection rhythm. Increasing weighting coefficient 2 makes the adjustment of atmospheric pressure parameters more dominant.

[0050] This application also discloses a transistor electrical testing system with multiple testing stations, including a processor, which executes the steps of the transistor electrical testing method with multiple testing stations as described in any of the above embodiments.

[0051] This application also discloses a storage medium storing a program that, when executed by a processor, implements the steps of the transistor electrical testing method with multiple testing stations described in any of the above embodiments.

[0052] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A method for electrical testing of transistors at multiple testing stations, characterized in that, Includes the following steps: The control feeding device feeds transistors to the first turntable, the first turntable feeds transistors to the second turntable, the second turntable performs high-voltage testing, the second turntable feeds transistors that have passed the high-voltage test to the third turntable; the third turntable feeds transistors to the fourth turntable for atmospheric pressure testing, and the fourth turntable discharges transistors that have passed the atmospheric pressure test through the discharge device. The second turntable returns transistors that fail the high-voltage test to the first turntable for high-voltage secondary transport. After the second turntable performs high-voltage tests on a first set number of transistors, it performs a second high-voltage test on the transistors transported for high-voltage secondary transport. If a transistor fails the second high-voltage test, it is transported to the third turntable, where it is rejected. The first set number is the sum of the remaining distance the transistor travels on the second turntable and the total distance it travels on the first turntable. The fourth turntable returns transistors that fail the atmospheric pressure test to the third turntable for a second atmospheric pressure transport. After the fourth turntable performs an atmospheric pressure test on a second set number of transistors, it performs a second atmospheric pressure test on the transistors transported for the second atmospheric pressure test. If a transistor fails the second atmospheric pressure test, it is transported to the third turntable, where it is rejected. The second set number is the sum of the remaining distance the transistor travels on the fourth turntable and the total distance it travels on the third turntable.

2. The transistor electrical testing method with multiple testing stations according to claim 1, characterized in that, The method also includes the following steps: If the transistor fails the high voltage test, when the transistor is conveyed to the feeding position from the second turntable to the third turntable, both the third and fourth turntables will pause conveying once. The transistor will continue to move on the second turntable until it is fed to the first turntable from the feeding position from the second turntable to the first turntable. When a transistor that needs to undergo secondary high-voltage testing passes through the feeding point of the feeding device to feed the first turntable, the feeding device pauses feeding once. If the transistor fails the normal pressure test, when the transistor is conveyed to the discharge position of the fourth turntable, the discharge device will pause the discharge once, and the transistor will continue to move on the fourth turntable until it is fed to the third turntable from the feed position of the fourth turntable. When a transistor requiring secondary atmospheric pressure testing is on the third turntable, and it passes the feeding point from the second turntable to the third turntable, the second turntable pauses its feeding once.

3. The transistor electrical testing method with multiple testing stations according to claim 2, characterized in that, The process of pausing delivery also includes the following steps: When the second turntable pauses its conveying, the transistor at the high-voltage test station is subjected to a second high-voltage test. The electrical parameters of the second high-voltage test are lower than those of the transistor during the first high-voltage test.

4. The transistor electrical testing method with multiple testing stations according to claim 1, characterized in that, The method also includes the following steps: If the transistor fails the high-voltage test, when the transistor is conveyed to the feeding position from the second turntable to the third turntable, before the third and fourth turntables convey the next transistor, the feeding device, the first turntable, and the second turntable will add one conveying operation, and the increased conveying speed will be at least twice the speed without the increased conveying operation; wherein, the timestamp of the next conveying operation after the increased conveying operation remains unchanged. The transistor continues to move on the second turntable until it is fed to the first turntable from the feed point of the second turntable to the first turntable. When a transistor requiring secondary high-voltage testing passes through the feeding point of the feeding device to the first turntable, before the feeding device conveys the next transistor, the first, second, third, and fourth turntables and the discharging device add one more conveying operation, with the increased conveying speed being at least twice the speed without the increased conveying operation; wherein, the timestamp of the next conveying operation after the increased conveying operation of the first, second, third, fourth turntables and the discharging device remains unchanged; If the transistor fails the atmospheric pressure test, when the transistor is conveyed to the discharge position of the fourth turntable towards the discharge device, the feeding device, the first turntable, the second turntable, the third turntable, and the fourth turntable will perform an additional conveying operation. The transistor continues to move on the fourth turntable until it is fed to the third turntable from the feed point of the fourth turntable. When the transistor that needs to be tested under secondary atmospheric pressure is on the third turntable, when it passes the feeding point from the second turntable to the third turntable, the third turntable, the fourth turntable and the discharge device will add one more conveying step. Among them, the number of times the feeding device, the first turntable, the second turntable, the third turntable, the fourth turntable, and the discharging device increase the conveying instantaneously is no more than one; the time consumed for high-pressure detection and the time consumed for normal-pressure detection are both no more than half of the time interval without increasing the conveying.

5. The transistor electrical testing method with multiple testing stations according to claim 4, characterized in that, The steps to increase the conveying process also include the following: When the second turntable increases the conveying capacity, a high-voltage test is performed on the transistor located at the high-voltage test station. The electrical parameters of the high-voltage test are at their maximum values. When the fourth turntable increases the conveying capacity, the transistors at the atmospheric pressure test station are subjected to atmospheric pressure testing. The electrical parameters of the atmospheric pressure test are at their maximum values.

6. The transistor electrical testing method with multiple testing stations according to claim 1, characterized in that, The secondary high-voltage testing process includes the following sub-steps: The number of secondary high-voltage tests is calculated within a preset time period as the first count. The first failure value is calculated based on the first count and the preset first failure count. The electrical parameters of the high-voltage test are adjusted according to the positive correlation of the first failure value. The electrical parameter values ​​are not greater than the preset maximum parameter values.

7. The transistor electrical testing method with multiple testing stations according to claim 1, characterized in that, The secondary atmospheric pressure test includes the following sub-steps: The number of times the second atmospheric pressure test is calculated within a preset time period. The second failure value is calculated based on the second failure value and the preset second failure number. The frequency value of the electrical parameters of the atmospheric pressure test is adjusted according to the positive correlation of the second failure value. The frequency value of the electrical parameters shall not be greater than the preset maximum frequency value.

8. The transistor electrical testing method with multiple testing stations according to claim 1, characterized in that, The method also includes the following steps: The number of times the secondary high-voltage test is calculated within a preset time period is the first count. The first failure value is calculated based on the first count and the preset first failure count. The number of times the secondary atmospheric pressure test is counted is the second number. The second non-compliance value is calculated based on the second number and the preset second non-compliance number. The average non-conforming value is calculated by weighting the first non-conforming value and the second non-conforming value. The test time of high pressure test or normal pressure test is positively correlated with the average non-conforming value. Record the first set of timestamps for the secondary high-pressure test and the second set of timestamps for the secondary normal-pressure test within a set time period. Calculate the first time distribution uniformity based on the first timetamp set and the second time distribution uniformity based on the second timetamp set. The ratio of the first time distribution uniformity to the second time distribution uniformity is calculated as the time distribution ratio. The weighting coefficient of the first non-conforming value is adjusted according to the positive correlation of the time distribution ratio, and the weighting coefficient of the second non-conforming value is adjusted according to the negative correlation of the time distribution ratio.

9. A transistor electrical testing system with multiple testing stations, characterized in that, Includes a processor, wherein the steps of the transistor electrical testing method with multiple testing stations as described in any one of claims 1-8 are executed.

10. A storage medium, characterized in that, The storage medium stores a program that, when executed by a processor, implements the steps of the transistor electrical testing method with multiple testing stations as described in any one of claims 1-8.

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