Silicon wafer cutting method

Abstract

This application relates to the field of photovoltaic industry technology, specifically to a silicon wafer cutting method employing a single-blade three-stage reciprocating cutting mode. The method includes: a first stage cutting: within a feed position of 0-202mm, cutting is performed by feeding new wire from the take-up reel towards the pay-off reel in the reverse direction; a second stage cutting: within a feed position of 20-2219.5mm, cutting is performed by feeding existing wire from the pay-off reel towards the take-up reel in the forward direction, wherein the amount of existing wire used is 5.6km; a third stage cutting: within a feed position of 219.5-221mm, cutting is performed by feeding secondary existing wire from the take-up reel towards the pay-off reel in the reverse direction, wherein the amount of secondary existing wire used is 5.5km. The purpose of this application is to provide a silicon wafer cutting method that addresses at least one of the technical problems mentioned in the background art.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and more specifically, to a method for cutting silicon wafers. Background Technology

[0002] In the photovoltaic industry, cost reduction and efficiency improvement are the core driving forces for technological iteration, and the silicon wafer cutting field is continuously evolving towards larger sizes, thinner wafers, and finer lines. Currently, for 210mm large-size silicon wafers, the mainstream process adopts a single-blade three-segment reciprocating reverse cutting mode, with a cutting depth usually set at around 220mm to ensure a cut into the plastic plate of 5-7mm.

[0003] However, the above process still has significant shortcomings in actual production. Due to the significant accumulation of wire bow differences in the mid-to-high range where old wires are involved during the dicing process, non-penetrating line marks are frequently produced on both sides of the silicon wafer in the 150-210mm range, which seriously affects the dicing yield. Summary of the Invention

[0004] The purpose of this application is to provide a silicon wafer cutting method to address at least one of the technical problems mentioned in the background art.

[0005] To achieve the above objectives, this application adopts the following technical solution: This application provides a silicon wafer cutting method, employing a single-blade three-segment reciprocating cutting mode, the method comprising: First stage of cutting: at feed position 0 Within a range of 202mm, the new line on the take-up reel is fed in the opposite direction to the pay-off reel for cutting; Second stage cutting: at feed position 202 Within a range of 219.5mm, the old wire on the pay-off reel is fed forward to the take-up reel for cutting, and the amount of old wire used is 5.6km. Third stage cutting: at feed position 219.5 Within a range of 221mm, the secondary old wire on the take-up reel is used to feed the wire in the opposite direction to the pay-off reel for cutting, and the amount of secondary old wire used is 5.5km.

[0006] Optionally, in the first segment cutting, the total amount of new thread used on the take-up reel is 12km.

[0007] The beneficial effects of this technical solution are as follows: it provides sufficient unworn steel wire for the cutting process from the self-feed position of 0mm to 202mm, so that the cutting force is kept at a high level during this stage. At the same time, it provides a wire bow for the intervention of the old wire in the subsequent second and third cutting stages, which helps to reduce the fluctuation of cutting force caused by the alternation of old and new wires in the middle and high-level areas, thereby reducing the probability of the appearance of line marks.

[0008] Optionally, within the feed position range of 150-202mm, the reciprocating cutting frequency of the first segment is 1.27-1.29.

[0009] The beneficial effects of this technical solution are: it increases the number of reciprocating motions of the steel wire in the cutting process per unit time, which helps to maintain the continuous and stable cutting force in the cutting area, reduces the adverse effects of sudden changes in cutting force caused by frequency fluctuations on the surface quality of silicon wafers, and thus reduces the formation of line mark defects in high-level areas.

[0010] Optionally, the difference between the amount of old wire used in the first segment of the second segment cutting and the amount of old wire used in the second segment cutting is less than or equal to 0.2 km.

[0011] The beneficial effects of this technical solution are as follows: In the prior art, the difference in the amount of wire used between the forward and reverse wire feeding segments is large, which causes the bow to not be able to fully rebound when changing direction. In this embodiment, after controlling the difference between the forward and reverse wire feeding segments to within 0.2km, the forward and reverse wire feeding tend to be balanced, which is conducive to the bow being fully released at the end of the cutting, thereby reducing surface defects on both sides of the silicon wafer.

[0012] Optionally, within the feed position range of 150-202mm, the linear speed of the first segment cut is 2100m / min.

[0013] The beneficial effects of this technical solution are that it helps to keep the grinding action of the steel wire on the silicon wafer uniform and reduces the fluctuation of cutting force caused by changes in wire speed.

[0014] Optionally, within the feed position range of 150-202mm, the table speed of the first segment cutting is reduced from 2500μm / min to 2100μm / min.

[0015] The beneficial effects of this technical solution are as follows: as the cutting depth increases, the cutting resistance gradually increases. By gradually reducing the table speed, the cutting load per unit feed can be kept relatively stable, preventing a sharp increase in cutting force due to excessive table speed. This is conducive to a smooth transition in the cutting process in the high-position area and reduces the risk of line marks.

[0016] Optionally, in the second segment of cutting, the linear speed decreases from 2100 m / min to 1400 m / min, and the table speed decreases from 2100 μm / min to 150 μm / min.

[0017] The beneficial effects of this technical solution are as follows: during the stage when the old wire is involved in the cutting, as the wear of the steel wire intensifies, the cutting capacity gradually decreases. Simultaneously reducing the wire speed and table speed can match the reduction in cutting force with the reduction in feed rate, thus alleviating the uneven grinding caused by insufficient cutting force of the old wire.

[0018] Optionally, in the third segment cutting, the linear speed is 1400 m / min, and the table speed decreases from 150 μm / min to 60 μm / min.

[0019] The beneficial effects of this technical solution are as follows: In this way, within the range of only 1.5mm feed amount in the final cutting stage, the final cutting depth can be completed without introducing additional cutting force disturbance by using a low and constant linear speed in conjunction with a gradually decreasing table speed. This is conducive to the bow getting sufficient springback at the cutting end and reduces the adverse effects of the difference between the head and tail bows on the cross-sectional quality of the silicon wafer.

[0020] Optionally, during the first, second, and third cutting processes, the flow rate of the cutting fluid is 180-220 L / min, and the temperature of the cutting fluid is 21°C.

[0021] The beneficial effects of this technical solution are as follows: a constant and sufficient flow of cutting fluid can provide adequate cooling and lubrication to the cutting area, reducing the fluctuation of cutting force caused by frictional heating of the steel wire surface. At the same time, a constant cutting fluid temperature helps to maintain the temperature stability of the cutting area, reducing the interference of temperature changes on the mechanical properties of the steel wire and the removal rate of silicon wafer materials.

[0022] Optionally, within the feed position range of -1mm to 20mm, the reciprocating cutting frequency of the first segment increases from 0.45 to 1.20.

[0023] The beneficial effects of this technical solution are as follows: In the initial stage of cutting, the frequency gradually increases from a low value, which is conducive to the smooth transition of the cutting process from the start-up state to the stable cutting state, and alleviates the problem of excessive instantaneous impact on the steel wire caused by the initial high frequency. At the same time, the gradual increase in frequency helps to establish a stable cutting interface in the early stage of cutting, providing good starting conditions for subsequent continuous cutting in high-level areas.

[0024] The technical solution provided in this application can achieve at least one of the following beneficial effects: The silicon wafer cutting method provided in this application reduces the amount of old wire used in the second section from 7.8km to 5.6km and increases the amount of old wire used in the third section from 4.9km to 5.5km, thereby balancing the amount of wire used in the two sections. At the same time, the feed range is adjusted to effectively reduce the cumulative difference of wire bows in the middle and high-level areas, thereby reducing the frequency of non-penetrating line marks on both sides of the 150-210mm section of the silicon wafer, which is beneficial to improving the cutting yield.

[0025] The additional technical features and advantages of this application will become more apparent from the following description or from practical application. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the specific embodiments of this application, the accompanying drawings used in the description of the specific embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0027] Figure 1 This is a schematic flowchart of one embodiment of the silicon wafer cutting method provided in this application. Detailed Implementation

[0028] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0029] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0030] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0031] like Figure 1 As shown, this application provides a silicon wafer cutting method, employing a single-blade three-segment reciprocating cutting mode, the method comprising: Step 100: First segment cutting: at feed position 0 Within a range of 202mm, the new line on the take-up reel is fed in the opposite direction to the pay-off reel for cutting; The total length of the new wire stored on the take-up reel is 12km. The purpose of reverse wire feeding is to ensure that the cutting depth of the silicon wafer tail meets the process requirements.

[0032] Step 200: Second segment cutting: at feed position 202 Within a range of 219.5mm, the old wire on the pay-off reel is fed forward to the take-up reel for cutting, and the amount of old wire used is 5.6km. The first-stage old wire refers to the old wire received by the wire feeding wheel after the first section of cutting. The purpose of forward wire feeding is to ensure that the cutting depth of the silicon wafer head meets the process requirements.

[0033] Step 300: Third segment cutting: at feed position 219.5 Within a range of 221mm, the secondary old wire on the take-up reel is used to feed the wire in the opposite direction to the pay-off reel for cutting, and the amount of secondary old wire used is 5.5km.

[0034] The secondary old wire is the old wire received by the take-up wheel after the second section is cut. The purpose of reverse wire feeding is to flatten the wire bow and control the difference between the wire bow at the beginning and end of the silicon wafer within the range of 1-3mm.

[0035] During the three-stage cutting process described above, the cutting depth was set to 221mm to ensure that the silicon wafer cut into the plastic plate by 5-7mm.

[0036] Currently, the mainstream process adopts a single-blade three-stage reciprocating reverse cutting mode. In the first stage, within the feed position range of 0-202mm, 12km of new line stored on the take-up reel is used to feed the line in the reverse direction to the pay-off reel for cutting. In the second stage, within the range of 202-220mm, the process switches to feeding 7.8km of primary old line on the pay-off reel in the forward direction to the take-up reel for cutting. In the third stage, within the range of 220-221.2mm, 4.9km of secondary old line on the take-up reel is used to feed the line in the reverse direction to the pay-off reel for cutting, in order to flatten the bow. However, in the existing single-blade three-segment reciprocating reverse cutting mode, the cutting frequency in the high-position section is too low (only 1.17-1.19 reciprocating frequencies in the 150-202mm range), resulting in drastic changes in cutting force. The second segment uses as much as 7.8km of old wire, causing excessive wear of the old wire. When participating in subsequent cutting, the cutting force difference between the old wire and the new wire is significant. The third segment uses only 4.9km of wire, about 2.9km less than the second segment, resulting in insufficient bowing ability and difficulty in effectively balancing the bowing difference. These defects severely restrict the cutting yield and processing stability of silicon wafers. At the same time, there is an 8-10mm bowing difference in the cutting process in the existing process, and this bowing difference is more significant in the mid-to-high position region where the old wire participates in the cutting, resulting in wire mark defects concentrated in the 150-210mm range of the silicon wafer.

[0037] The silicon wafer dicing method provided in this application reduces the amount of old wire used in the second segment from 7.8km to 5.6km and increases the amount of old wire used in the third segment from 4.9km to 5.5km, thus balancing the amount of wire used in the two segments. Simultaneously, adjusting the feed range effectively reduces the cumulative difference in wire bowing in the mid-to-high range, thereby reducing the frequency of non-penetrating line marks on both sides of the 150-210mm section of the silicon wafer, which is beneficial for improving dicing yield. This application, through research on frequency and standard stage wire consumption (stage dicing force), rationally sets process parameters, increases the overall dicing frequency, reduces the amount of old wire used in the second segment, and narrows the difference in the amount of wire used in the third segment, thereby reducing the amplitude of dicing force variation during dicing and enhancing the uniform distribution of dicing force throughout the entire dicing stroke.

[0038] Optionally, in the first cutting stage, the total amount of new wire used on the take-up reel is 12km. This provides sufficient unworn steel wire for the cutting process from the feed position 0mm to 202mm, maintaining a high cutting force during this stage. It also provides a wire bow for the introduction of old wire in the subsequent second and third cutting stages, which helps reduce the fluctuation in cutting force caused by the alternation of old and new wire in the mid-to-high range, thereby reducing the probability of wire marks. Within the feed position range of 0-202mm, the cutting wire amount is gradually adjusted from 749m to 733m, and the return wire amount is gradually adjusted from 701m to 556m to match the cutting force requirements at different feed depths.

[0039] Optionally, within the feed position range of 150-202mm, the reciprocating cutting frequency of the first segment is 1.27-1.29. This increases the number of reciprocating movements of the steel wire involved in the cutting per unit time, which is beneficial for maintaining continuous and stable cutting force within the cutting area, reducing the adverse effects of sudden changes in cutting force caused by frequency fluctuations on the surface quality of the silicon wafer, thereby reducing the formation of line marks in the high-position area. Simultaneously, the reciprocating cutting frequency exhibits a trend of first increasing and then decreasing, specifically increasing from 1.28 at the feed position of 150mm to 1.29 at 195mm, and then decreasing to 1.27 at 202mm, to adapt to the changing cutting resistance in the high-position area.

[0040] Optionally, the difference between the amount of old wire used in the first stage of the second cut and the amount of old wire used in the second stage of the third cut is less than or equal to 0.2 km. In the prior art, the difference in the amount of wire used between the forward and reverse feed sections is large, resulting in insufficient rebound of the bow during reversal. In this embodiment, by controlling the difference between the forward and reverse feed sections to within 0.2 km, the forward and reverse feeds tend to be balanced, which is beneficial for the bow to be fully released at the end of the cut, thereby reducing surface defects on both sides of the silicon wafer. Specifically, the amount of old wire used in the first stage is 5.6 km, and the amount of old wire used in the second stage is 5.5 km, with a difference of 0.1 km. This makes the amount of wire used in the third reverse section equal to the amount of wire used in the second forward section, thus enhancing the bow flattening capability.

[0041] Optionally, within the feed position range of 150-202mm, the wire speed for the first segment of cutting is 2100m / min. This helps to maintain a uniform grinding effect of the steel wire on the silicon wafer and reduces cutting force fluctuations caused by variations in wire speed. Within the feed position range of 150-202mm, the wire feed is 733-776m and the return wire is 556-633m to maintain the stability of the cutting process within this range.

[0042] Optionally, within the feed position range of 150-202mm, the table speed for the first segment of cutting is gradually reduced from 2500μm / min to 2100μm / min. This way, as the cutting depth increases, the cutting resistance gradually rises. By progressively reducing the table speed, the cutting load per unit feed rate can be kept relatively stable, preventing a sharp increase in cutting force due to excessively high table speed. This facilitates a smooth transition in the high-position cutting process and reduces the risk of line marks.

[0043] Optionally, in the second stage of cutting, the wire speed decreases from 2100 m / min to 1400 m / min, and the table speed decreases from 2100 μm / min to 150 μm / min. During the stage where the old wire participates in the cutting, as the wear of the steel wire intensifies, the cutting capacity gradually decreases. Simultaneously reducing the wire speed and table speed allows the reduction in cutting force to match the decrease in feed rate, alleviating uneven grinding caused by insufficient cutting force from the old wire. In the second stage of cutting, the wire feed rate increases from 733 m to 890 m, and the return wire rate increases from 556 m to 1630 m to adapt to the changes in cutting force after the old wire intervenes in the forward wire feeding cutting mode.

[0044] Optionally, in the third stage of cutting, the linear speed is 1400 m / min, and the table speed decreases from 150 μm / min to 60 μm / min. This way, within the final feed range of only 1.5 mm, a lower and constant linear speed combined with a gradually decreasing table speed allows for the completion of the final cut depth without introducing additional cutting force disturbance. This facilitates sufficient rebound of the wire bow at the cutting end, reducing the adverse effects of the difference between the beginning and end of the wire bow on the wafer's cross-sectional quality. During the third stage of cutting, the wire feed increases from 890 m to 1946 m, and the return wire decreases from 1630 m to 1054 m to provide sufficient reverse wire feed at the final stage of cutting, enhancing the bow retraction effect.

[0045] Optionally, during the first, second, and third cutting stages, the flow rate of the cutting fluid is 180-220 L / min, and the temperature is 21°C. This constant and sufficient flow rate of the cutting fluid ensures adequate cooling and lubrication of the cutting area, reducing fluctuations in cutting force caused by frictional heating of the steel wire surface. Simultaneously, the constant temperature of the cutting fluid helps maintain temperature stability in the cutting area, minimizing the impact of temperature changes on the mechanical properties of the steel wire and the removal rate of the silicon wafer. Specifically, the cutting fluid flow rate is set to 220 L / min within the feed position range of 0-218.5 mm; and to 180 L / min within the feed position range of 211-221 mm.

[0046] Optionally, within the feed position range of -1mm to 20mm, the reciprocating cutting frequency of the first segment increases from 0.45 to 1.20. In the initial cutting stage, the frequency gradually increases from a low value, which is beneficial for a smooth transition from the starting state to a stable cutting state, alleviating the problem of excessive instantaneous impact on the steel wire caused by an excessively high initial frequency. Simultaneously, the gradual increase in frequency helps establish a stable cutting interface in the early stages of cutting, providing good starting conditions for subsequent continuous cutting in higher areas. Specifically, at the feed position of -1mm, the wire speed is 700m / min, the table speed is 1500μm / min, the wire feed is 749m, the return wire feed is 701m, and the frequency is 0.45; within the feed position range of 5-20mm, the wire speed increases from 1500m / min to 2100m / min, the table speed increases from 1800μm / min to 3000μm / min, and the frequency increases from 0.88 to 1.20. The parameter gradual setting in the initial stage allows the cutting interface to be smoothly established from scratch.

[0047] To better illustrate the silicon wafer dicing method provided in this application, this application also provides an application example of the silicon wafer dicing method, which is as follows: Cost reduction and efficiency improvement are the main themes of the photovoltaic industry. The advancement of large size, thinness and fine line cutting is the mainstream technical route for silicon wafer cutting to continuously reduce costs. When cutting to the middle and high position, fine line cutting is prone to producing the most common abnormality: high-position line marks.

[0048] Currently, 210mm silicon wafers are cut using a single-blade, three-segment reciprocating reverse cutting method. Due to an 8-10mm difference in wire bowing during the cutting process, particularly significant accumulation in the mid-to-high areas where older wires are involved in the cutting, the process is designed to cut a maximum depth of approximately 220mm for 210mm wafers (ensuring an actual cutting depth of 5-7mm into the plastic substrate). The cutting scheme is as follows: The first stage (feed position 0-202mm) involves feeding 12km of new wire stored on the take-up reel towards the pay-off reel for cutting (ensuring sufficient cutting depth at the tail). The second stage (feed position 202-220mm) involves feeding 7.8km of primary old wire on the pay-off reel towards the take-up reel for cutting (ensuring sufficient cutting depth at the head). The third stage (feed position 220-221.2mm) involves feeding 4.9km of secondary old wire on the take-up reel towards the pay-off reel for cutting (flattening the wire bow, ensuring the difference between the head and tail bows is within 1-3mm). Generally, high-position line marks appear in the 150-210mm range of the silicon wafer. These are non-penetrating line marks existing on both sides of the wafer. The main process factor affecting the output of high-position line marks is the change in cutting force in the line mark area. This change in cutting force is controlled by process parameters such as the table speed, wire speed, wire consumption, and frequency (the number of reciprocating cutting movements of the steel wire within 1 minute). The following shows the frequency change trend after cutting to 150mm: When the feed position is 150-202mm, the reciprocating frequency of the cutting feed line is 1.17-1.19, increasing first and then decreasing; when the feed position is 202-220mm, the reciprocating frequency of the cutting feed line is 1.17-0.51, gradually decreasing; when the feed position is 220-221.2mm, the reciprocating frequency of the cutting feed line is 0.51-0.43, gradually decreasing. See Table 1 for the cutting process parameter settings.

[0049] Table 1:

[0050] The existing technology has the following drawbacks: the frequency of cutting to the high position in the first stage is relatively low, the cutting force varies greatly, and it is easy to produce line marks; the second stage uses more thread, and the cutting force of the old thread is too much, so there will be a large difference in cutting force when it participates in the next cut with the new thread; the third stage has a weak thread take-up bow capability, the feed is only 1.2mm, and the thread consumption is 2.9km less than the second stage, and the required cutting depth is achieved by relying on the cutting force of the second stage.

[0051] The purpose of this application is to address the aforementioned problems in existing technologies by proposing an improved and innovative method for high-mark dicing of silicon wafers. In the silicon wafer dicing process, the width of the dicing marks is determined by the feed position, wire speed, stage speed, return wire quantity, and frequency. Through research and confirmation on frequency and standard stage wire consumption (stage cutting force), the process parameters are rationally set to increase the overall dicing frequency, reduce the amount of old wire used in the second stage, and minimize the difference in wire quantity used in the third stage. This aims to reduce excessive changes in cutting force during the dicing process, enhance the uniform distribution of cutting force, and prevent uneven cutting force distribution in the high-mark area from causing dicing marks. This solves the problem of defective high-mark batch production in existing processes.

[0052] This solution adopts a single-blade three-stage reciprocating cutting mode; the first stage (feed position 0-202mm) first feeds 12km of new line stored on the take-up reel to the pay-off reel for cutting; the second stage (feed position 202-219.5mm) feeds 5.6km of primary old line on the pay-off reel to the take-up reel for cutting; the third stage (feed position 219.5-221mm) feeds 5.5km of secondary old line on the take-up reel to the pay-off reel for cutting. The following shows the frequency change trend after cutting to 150mm: When the feed position is 150-202mm, the reciprocating frequency of the cutting feed line is 1.27-1.29, increasing first and then decreasing; when the feed position is 202-219.5mm, the reciprocating frequency of the cutting feed line is 1.27-0.51, gradually decreasing; when the feed position is 219.5-221mm, the reciprocating frequency of the cutting feed line is 0.51-0.43, gradually decreasing. See Table 2 for the cutting process parameter settings.

[0053] Table 2:

[0054] The silicon wafer cutting method provided in this application can achieve the following technical effects: the overall cutting frequency is increased, the cutting force distribution between new and old wires is more uniform, and the risk of producing wire marks is reduced; under the premise that the cutting force at the high position is sufficient, the amount of old wires is reduced, ensuring that the old wires will not be excessively worn when participating in the next cut; the amount of reverse wires used in the third stage is increased to be equal to the amount of forward wires used in the second stage, ensuring the ability to flatten the wire bow.

[0055] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A method of cutting a silicon wafer, characterized by, The method employs a single-blade, three-segment reciprocating cutting mode, and includes: First cut: at feed position 0 Within the 202mm range, the new line on the take-up wheel is used to send the line in the opposite direction to the pay-off wheel end for cutting; Second segment cut: at feed position 202 219.5mm range, using a once old line on the pay-off wheel to the wire reel end positive cut, the amount of wire used by the line is 5.6km; Third stage cutting: at feed position 219.5 Within a range of 221mm, the secondary old wire on the take-up reel is used to feed the wire in the opposite direction to the pay-off reel for cutting, and the amount of secondary old wire used is 5.5km.

2. The silicon wafer cutting method according to claim 1, characterized in that, In the first segment of cutting, the total amount of new thread used on the take-up reel is 12km.

3. The silicon wafer cutting method according to claim 1, characterized in that, Within the feed position range of 150-202mm, the reciprocating cutting frequency of the first segment is 1.27-1.

29.

4. The silicon wafer cutting method according to claim 1, characterized in that, The difference between the amount of old wire used in the first stage of the second segment cutting and the amount of old wire used in the second stage of the third segment cutting is less than or equal to 0.2 km.

5. The silicon wafer cutting method according to claim 1, characterized in that, Within the feed position range of 150-202mm, the linear speed of the first segment cut is 2100m / min.

6. The silicon wafer cutting method according to claim 1, characterized in that, Within the feed position range of 150-202mm, the table speed for the first segment cutting decreases from 2500μm / min to 2100μm / min.

7. The silicon wafer cutting method according to claim 1, characterized in that, In the second cutting stage, the linear speed decreased from 2100 m / min to 1400 m / min, and the table speed decreased from 2100 μm / min to 150 μm / min.

8. The silicon wafer cutting method according to claim 1, characterized in that, In the third segment of cutting, the linear speed is 1400 m / min, and the table speed decreases from 150 μm / min to 60 μm / min.

9. The silicon wafer cutting method according to claim 1, characterized in that, During the first, second, and third cutting processes, the flow rate of the cutting fluid is 180-220 L / min, and the temperature of the cutting fluid is 21°C.

10. The silicon wafer dicing method according to any one of claims 1 to 9, characterized in that, Within the feed position range of -1mm to 20mm, the reciprocating cutting frequency of the first segment increases from 0.45 to 1.20.

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