Low-dielectric alkali-soluble resin, photoresist composition, and use thereof

Abstract

The application belongs to the technical field of photocuring materials, and relates to a low-dielectric alkali-soluble resin, a photoresist composition and application thereof. The alkali-soluble resin provided by the application has good compatibility, photosensitive reactivity and low-temperature curing capacity, and can meet the application requirements of a photosensitive resin material for low-temperature processing of a display panel. The photoresist composition based on the resin, by introducing the low-dielectric alkali-soluble resin, cooperates with a crosslinking agent, a photoinitiator, an ultraviolet absorber, an additive (a leveling agent and a silane coupling agent) and an organic solvent, so that the photoresist film after curing exhibits better photosensitivity, stronger Glass and SiNx adhesion and lower dielectric constant, and can meet the technical requirements of a new generation of high-frequency high-definition display devices for photoetching materials.

Description

Technical Field

[0001] This invention belongs to the field of photocurable materials technology, and relates to a low-temperature curing alkali-soluble resin, a photoresist composition and its application, and particularly to a phenolic resin-based photoresist material that achieves a balance of low dielectric properties, high substrate adhesion properties and low-temperature curing ability through multi-functional group synergistic modification. Background Technology

[0002] In the manufacturing processes of various display panels such as TFT-LCD and OLED, photoresist is the core photosensitive material for pixel definition, pattern etching, insulating layer patterning, and protective film preparation. Its performance directly determines the pattern accuracy, process yield, and device lifespan of the display panel. Currently, alkali-soluble phenolic resin-based photoresists, with their excellent photosensitivity, good alkali development compatibility, mature process compatibility, and cost advantages, have become the most widely used photoresist matrix resin in the mass production of display panels, meeting the basic requirements for micron-level and even submicron-level patterning of display substrates.

[0003] However, with the development of display technology towards high-frequency driving, high refresh rates, and ultra-thin flexibility, stringent requirements have been placed on the dielectric properties of photoresist films. Currently, the alkali-soluble resins used in commercial display panel photoresists are mostly ordinary unmodified phenolic resins or simply modified phenolic resins. Because these phenolic resins contain a large number of high-density hydroxyl groups and polar benzene ring structures in their molecular structure, the overall molecular polarity is strong and the degree of polarization is high, resulting in a high dielectric constant in the cured film. In the context of current high-frequency driving, high refresh rate, and ultra-thin flexible display panels, the photoresist film, as a key dielectric film surrounding the pixel structure and insulating layer, is highly susceptible to problems such as signal crosstalk, increased parasitic capacitance, and device response delay due to its high dielectric constant. This severely affects the touch sensitivity, screen refresh rate, and image clarity of the display panel, making it difficult to meet the high-frequency, low-loss operating requirements of high-end display devices. Furthermore, the uneven distribution of polar groups in the existing phenolic resin molecular structure leads to poor compatibility with components such as photosensitizers, solvents, and additives in the photoresist. This defect not only causes stability problems such as delamination and precipitation of photoresist during storage, but also causes fluctuations in photosensitivity, narrowing the control window of exposure and development process parameters, making it difficult to ensure the consistency and reliability of high-precision patterning.

[0004] To improve the compatibility of traditional phenolic resin photoresists and address the technical bottleneck of high dielectric constant, a few research schemes have emerged that modify phenolic resins with single groups. For example, alkyl modification optimizes the resin's hydrophobicity and heat resistance, but its ability to regulate molecular polarization is limited, failing to effectively reduce the dielectric constant and showing little improvement in substrate adhesion. Similarly, siloxane modification utilizes silicon to enhance the bond between the resin and the substrate, but the insufficient steric hindrance of the siloxane groups and poor resin skeleton density limit the improvement in dielectric properties. Clearly, existing single-modification techniques have significant limitations; their modification effects are singular and cannot simultaneously address photoresist compatibility, low dielectric properties, and substrate adhesion, making it difficult to meet the stringent process requirements of next-generation high-frequency, high-definition display panels.

[0005] In view of this, there is an urgent need to develop a phenolic resin that can achieve synergistic modification of sterically hindered alkyl and siloxane groups through innovative molecular structure design, thereby possessing both stable low dielectric properties and excellent overall performance in photolithography processes, and apply it to photoresists for display panels to meet the increasingly stringent technical requirements of next-generation high-frequency high-definition display devices for photolithography materials. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a low-dielectric alkali-soluble resin, a photoresist composition, and its application, so as to solve the core shortcomings of existing phenolic resin photoresists, such as high inherent dielectric constant and unbalanced molecular structure performance, which make it difficult to simultaneously achieve compatibility with other photoresist components, substrate adhesion, and low dielectric loss characteristics.

[0007] The objective of this invention is achieved through the following technical solution: On the one hand, the present invention provides a low dielectric alkali-soluble resin, which is based on oligomers of phenolic resin as the main chain and modified with various modifiers to obtain an alkali-soluble resin; wherein, the structural formula of the alkali-soluble resin is as follows (1): Equation (1) In formula (1), n1 represents the degree of polymerization of the phenolic resin, taking the integer value from 5 to 80; n2, n3, and n4 are each independently integers from 0 to 3; R is hydrogen or substituted or unsubstituted C1-C4 alkyl, substituted or unsubstituted C1-C4 alkoxy, substituted or unsubstituted C3-C4 alkyl, or substituted or unsubstituted C3-C4 alkyl. 10 Cycloalkyl, substituted or unsubstituted C6-C 15 Aryl, substituted or unsubstituted C7-C 15 Any one of the aralkyl groups; Specifically, X has a carboxylic acid group and is connected to the main chain via an ester group; Y has a siloxane structure; and Z has a carbon-carbon double bond.

[0008] Specifically, the structural formula of X is as follows (2): Equation (2) In formula (2), X1 is a substituted or unsubstituted C1-C6 alkylene group, a substituted or unsubstituted C2-C8 alkoxy group, or a substituted or unsubstituted C3-C6 alkylene group. 12 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 18 Any of the aralkyl groups.

[0009] Specifically, X includes one of the chemical structures shown in formulas X-1 to X-27: .

[0010] Specifically, the structural formula of Y is as follows (3): Equation (3) In formula (3), Y1 is connected to the main chain and is a heteroatom linking chain, such as an ester group, a carbamate group, a thiocarbamate group, a thioether group, or an ether group; Y2 is a substituted or unsubstituted C1-C5 alkylene group, a substituted or unsubstituted C2-C6 alkoxy subunit, or a substituted Si1-Si 10 Siloxane subunits, substituted or unsubstituted C3-C 14 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 20 Any one of the aralkyl groups; Y3, Y4, and Y5 are each independently selected from substituted or unsubstituted C1-C5 alkyl groups and substituted or unsubstituted C1-C6 alkoxy groups.

[0011] Specifically, Y includes one of the chemical structures shown in formulas Y-1 to Y-30: .

[0012] Specifically, the structural formula of Z is as follows: (4-1) or (4-2): Equation (4-1) Equation (4-2) Z1 is connected to the main chain and is a heteroatom-linking chain, such as an amino group, ester group, thioether group, ether group, or a single chemical bond "-"; Z2 is a single chemical bond "-", a substituted or unsubstituted C1-C5 alkylene group, a substituted or unsubstituted C2-C6 alkoxy group, a substituted or unsubstituted polyoxyethylene chain, or a substituted or unsubstituted C3-C... 14 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 20 Any of the aralkyl groups; Z3 is hydrogen or methyl.

[0013] It is important to clarify that the term "alkyl" refers to a monovalent group of an alkane, specifically a saturated hydrocarbon. Alkyl groups can be straight-chain, branched, cyclic, or combinations thereof. The term "alkylene" refers to a divalent group of an alkane. Alkylenes can be straight-chain, branched, cyclic, or combinations thereof. The term "alkeneoxy" can encompass all functional groups containing one or more alkylene groups bonded to at least one oxygen atom. For example, it can contain -(alkylene-oxygen). n -alkylene-, -(alkylene-oxy-alkylene) n -alkylene-, -alkylene-oxy-, or -(oxy-alkylene) n - where n is an integer from 1 to 10.

[0014] Specifically, Z includes one of the chemical structures shown in formulas Z-1 to Z-24: .

[0015] Specifically, the alkali-soluble resin has the structural formula of any one of the following formulas (1-2) to (1-4): Equation (1-2) Equation (1-3) Equation (1-4) Where n is an integer from 5 to 80, and q is an integer from 1 to 20.

[0016] Specifically, the molecular weight of the alkali-soluble resin is Mn=3000~30000, and the molecular weight distribution (i.e., dispersion coefficient) is PDI=1.2~3.0.

[0017] Specifically, the epoxy equivalent of the alkali-soluble resin is 400~1000 g / mol.

[0018] Specifically, the modifier includes a first modifier, a second modifier, and a third modifier, and the mass ratio of the phenolic resin, the first modifier, the second modifier, and the third modifier is 100:(10~80):(10~80):(10~80). In this invention, the first modifier is (meth)acrylic acid and its hydroxyethyl ester, polyethylene glycol ester, 2-aminoethyl acrylate, 2-mercaptoethyl acrylate, acrylamide, p-hydroxystyrene, p-mercaptostyrene, etc.; the second modifier is a cyclic anhydride, etc.; and the third modifier is an isocyanate with a silane functional group, a thioisocyanate with a silane functional group, etc.

[0019] It should be noted that the mass ratio of phenolic resin, the first modifier, the second modifier, and the third modifier can be adapted within the above range. For example, it can be 100:20:45:20, 100:80:10:10, 100:10:80:10, 100:10:10:80, etc., which will not be listed here.

[0020] On the other hand, the present invention also provides a photoresist composition comprising the following components in parts by weight: 15-21 parts of alkali-soluble resin, 10-20 parts of crosslinking agent, 1.8-2.2 parts of photoinitiator, 0.4-0.6 parts of ultraviolet absorber (such as UV320), 0.2-0.4 parts of leveling agent (such as BYK354), 1.2-2 parts of silane coupling agent (such as A174), and 60-68 parts of organic solvent.

[0021] It should be noted that, in the above photoresist composition, the amount of each component is only required to be within the above range, and can be flexibly selected according to the actual application requirements. For example, the amount of alkali-soluble resin can be 15 parts, 16 parts, 17 parts, 18 parts, 19 parts, 20 parts, 21 parts, etc., and will not be listed here; the amount of photoinitiator can be 1.8 parts, 1.9 parts, 2.0 parts, 2.1 parts, 2.2 parts, etc., and will not be listed here; the amount of ultraviolet absorber can be 0.4 parts, 0.5 parts, 0.6 parts, etc., and will not be listed here; the amount of leveling agent can be 0.2 parts, 0.3 parts, 0.4 parts, etc., and will not be listed here; the amount of silane coupling agent can be 1.2 parts, 1.4 parts, 1.6 parts, 1.8 parts, 2.0 parts, etc., and will not be listed here; the amount of organic solvent can be 60 parts, 61 parts, 62 parts, 63 parts, 65 parts, 67 parts, 68 parts, etc., and will not be listed here.

[0022] In addition, the present invention also provides an application of the photoresist composition described above in a light-emitting device. In the application, the photoresist composition is first attached to the surface of a substrate by spin coating, blade coating or slot coating, and then pre-baking, exposure and development are performed to form an island pattern array.

[0023] Compared with the prior art, the technical solution provided by the present invention has the following beneficial effects: 1. This invention modifies phenolic resin by synergistic modification of multiple functional groups, simultaneously introducing carboxylic acid groups, siloxane groups, and polymerizable double bonds into the resin molecule. The carboxylic acid is introduced by a second modifier, the siloxane groups by a third modifier, and the polymerizable double bonds by a first modifier. This results in an alkali-soluble resin (carboxylic acid groups) that possesses good compatibility, photosensitive reactivity (polymerizable double bonds), and low-temperature curing ability, thus meeting the application requirements of photosensitive resin materials in the low-temperature manufacturing process of display panels. 2. The photoresist composition prepared by this invention requires an exposure energy of 80~105mJ / cm², which can form a stable photolithographic pattern at a low exposure dose and meet the process requirements of low-temperature processes in panel production. 3. By introducing a hydrolyzable siloxane structure, this invention improves the interfacial bonding ability between the cured film layer and the inorganic substrate, enabling the photoresist composition to exhibit an adhesion of more than 4B on both Glass and SiNx substrates, effectively improving the interfacial stability and reliability of the patterned film layer in subsequent processing. 4. This invention introduces a low-polarity siloxane structure and flexible segments to increase the free volume of the resin and reduce the molecular polarizability, thereby lowering the dielectric constant of the cured film to below 3.02. While ensuring photolithographic performance, it also maintains low dielectric properties, meeting the application requirements of low-dielectric photolithography materials for high-frequency, high-speed display devices. Detailed Implementation

[0024] Exemplary embodiments will now be described in detail. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples consistent with some aspects of the invention as detailed in the appended claims.

[0025] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below with reference to embodiments.

[0026] Preparation Example 1 This preparation example provides a first alkali-soluble resin, the specific preparation method of which is as follows: 25 g of methylphenolic resin, 100 g of epichlorohydrin, and 1 g of tetrabutylammonium bromide (TBAB) were placed in a 250 mL three-necked flask and heated to 80 °C under nitrogen protection for 6 hours. The mixture was then cooled to room temperature, 20 g of sodium hydroxide was added, and the reaction was carried out at 45 °C for 2 hours. Another 30 g of sodium hydroxide was added, and the reaction was raised to 60 °C for 4 hours. The mixture was washed six times with water, distilled, and filtered to obtain the phenolic epoxy resin.

[0027] Add 20 g of phenolic epoxy resin (the product from the previous step) to a 500 mL three-necked flask equipped with a magnetic induction device, condenser, nitrogen protection device, and thermometer. Add 200 mL of propylene glycol methyl ether acetate. After the resin dissolves, add 0.04 g of p-methoxyphenol (MEHQ), 0.05 g of TBAB catalyst, and dropwise add 9.7 g of methacrylic acid. React at 80 °C until the acid value is less than 5 mg KOH / g (i.e., react for 6 h), then stop heating. When the reaction solution cools to below 30 °C, add 3.6 g of phthalic anhydride, heat to 80 °C and react for 3 h, then stop heating. When the reaction solution cools to below 30 °C, add 6.9 g of butyl thioisocyanate, heat to 70 °C and react for 6 h, then stop heating. When the reaction solution cools to below 30 °C, stop stirring to obtain a colorless and transparent liquid, which is the alkali-soluble resin A1, i.e., the alkali-soluble resin corresponding to the following formula (1-1): Equation (1-1) Among them, A1 resin has a molecular weight of Mn=9000, a molecular weight distribution of PDI=2.1, and an epoxy equivalent of 890 g / mol. Here, the mass ratio of phenolic resin, first modifier (methacrylic acid), second modifier (phthalic anhydride), and third modifier (butyl thioisocyanate) is 100:40:25:40.

[0028] Preparation Example 2 This preparation example provides a second type of low-dielectric, alkali-soluble resin, the specific preparation method of which is as follows: Based on Preparation Example 1, the difference is that butyl thioisocyanate was replaced with polysiloxane thioisocyanate. The rest of the preparation process and the amounts of each component were the same as in Preparation Example 1, ultimately yielding alkali-soluble resin A2, which corresponds to the alkali-soluble resin in formula (1-2). Its molecular weight is Mn = 8000, its molecular weight distribution is PDI = 2.1, and its epoxy equivalent is 810 g / mol. Here, the mass ratio of phenolic resin, the first modifier (methacrylic acid), the second modifier (phthalic anhydride), and the third modifier (siloxane thioisocyanate) is 100:40:25:40.

[0029] Preparation Example 3 This preparation example provides a third type of low-dielectric, alkali-soluble resin, the specific preparation method of which is as follows: Based on Preparation Example 2, the difference is that methylphenolic resin was replaced with tert-butylphenolic resin, and butyl thioisocyanate was replaced with trimethoxysilylcyclohexyl thioisocyanate. The remaining preparation process and the amounts of each component were the same as in Preparation Example 2. Finally, alkali-soluble resin A3 was obtained, which corresponds to the alkali-soluble resin in formula (1-3), with a molecular weight of Mn = 10000, a molecular weight distribution PDI = 2.05, and an epoxy equivalent of 910 g / mol. Here, the mass ratio of phenolic resin, the first modifier (methacrylic acid), the second modifier (phthalic anhydride), and the third modifier (trimethoxysilylcyclohexyl thioisocyanate) was 100:40:25:40.

[0030] Preparation Example 4 This preparation example provides a fourth type of low-dielectric, base-soluble resin, the specific preparation method of which is as follows: Based on Preparation Example 3, the difference lies in that methacrylic acid is replaced with long-chain acrylic acid, trimethoxysilylcyclohexyl thioisocyanate is replaced with trimethoxysilylcyclohexyl thioisocyanate, and phthalic anhydride is replaced with nadic anhydride. The remaining preparation process and the amount of each component are the same as in Preparation Example 3. Finally, alkali-soluble resin A4 is obtained, which is the alkali-soluble resin corresponding to formula (1-1), with a molecular weight of Mn=9900, a molecular weight distribution of PDI=2.0, and an epoxy equivalent of 900 g / mol. Here, the mass ratio of phenolic resin, first modifier (long-chain acrylic acid), second modifier (nadic anhydride), and third modifier (trimethoxysilylcyclohexyl thioisocyanate) is 100:40:25:40.

[0031] To test the performance of the resin synthesized through the above preparation steps after it is made into a photoresist, the following components were selected: PETA (pentaerythritol triacrylate), a commonly used crosslinking agent in the photoresist field; OXE-02, a photoinitiator from Changzhou Qiangli Electronic New Materials Co., Ltd.; UV320, an ultraviolet absorber; and additives consisting of silane coupling agent A174 and leveling agent BYK345 from BYK Chemical Co., Ltd. These components together formed the resin composition and served as the photoresist for performance testing.

[0032] The preparation of the photoresist composition specifically includes: adding the above raw materials to a brown glass bottle according to the set weight parts, stirring with a magnetic stirrer or stirring paddle until uniformly dispersed, and filtering with a PTFE filter membrane with a pore size of 0.22 μm to obtain a photoresist resin composition. The amounts of each component are as follows: 15-21 parts of alkali-soluble resin, 10-20 parts of crosslinking agent, 1.8-2.2 parts of photoinitiator, 0.4-0.6 parts of ultraviolet absorber, 0.2-0.4 parts of leveling agent, 1.2-2 parts of silane coupling agent, and 60-68 parts of organic solvent. The formulation of the obtained resin composition is shown in Table 1 below. Table 1 Example 1 This embodiment provides a photoresist composition (I), in which the raw materials are weighed according to the corresponding weight parts: 18 parts of alkali-soluble resin A4 (prepared in Preparation Example 4), 16 parts of crosslinking agent PETA, 2 parts of photoinitiator OXE-02, 65 parts of propylene glycol methyl ether acetate, 0.5 parts of ultraviolet absorber UV320, and the additives consist of 0.3 parts of leveling agent (BYK354) and 1.2 parts of silane coupling agent (A174).

[0033] Example 2 Based on Example 1, this example provides a photoresist composition (II), which differs from Example 1 in that: the amount of crosslinking agent PETA is 10 parts, and the other raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0034] Example 3 Based on Example 1, this example provides a photoresist composition (III), which differs from Example 1 in that the amount of crosslinking agent PETA is 20 parts, while the other raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0035] Example 4 Based on Example 1, this example provides a photoresist composition (IV), which differs from Example 1 in that the amount of silane coupling agent A174 in the additive is changed to 2 parts, while the remaining raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0036] Example 5 Based on Example 1, this comparative example provides a photoresist composition (V), which differs from Example 1 in that: alkali-soluble resin A4 is replaced with alkali-soluble resin A2 (obtained in Preparation Example 2), and the amount is still 18 parts. The remaining raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0037] Example 6 Based on Example 1, this comparative example provides a photoresist composition (six), which differs from Example 1 in that: alkali-soluble resin A4 is replaced with alkali-soluble resin A3 (obtained in Preparation Example 3), the amount is still 18 parts, and the remaining raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0038] Comparative Example 1 Based on Example 1, this comparative example provides a photoresist composition (VII), which differs from Example 1 in that: alkali-soluble resin A4 is replaced with Sanwang Chemical SW7160, and the amount is still 18 parts. The remaining raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0039] Comparative Example 2 Based on Example 1, this comparative example provides a photoresist composition (eighth), which differs from Example 1 in that: alkali-soluble resin A4 is replaced with alkali-soluble resin A1 (obtained in Preparation Example 1), the amount is still 18 parts, and the remaining raw materials and their amounts, as well as the preparation process, are the same as in Example 1.

[0040] The photoresist compositions prepared in Examples 1-6 and Comparative Examples 1-2 were subjected to performance tests, specifically including the following aspects: (1) Sensitivity value The prepared photosensitive resin composition was spin-coated onto a glass substrate. After spin coating, vacuum solvent removal, and pre-baking at 85°C for 180 seconds, the substrate was exposed using an IHG-Line exposure machine with a patterned mask. The exposure energy was increased incrementally in increments of 5 mJ / cm², followed by development with 2.38 wt% TMAH developer for 60 seconds. The lowest exposure energy corresponding to complete pattern retention without residual film was defined as the sensitivity value (Eop), measured in Eop (mJ / cm²).

[0041] (2) Substrate adhesion The prepared photosensitive resin composition was spin-coated onto a glass / silicon nitride substrate. After spin coating, vacuum solvent removal, and pre-baking at 85°C for 180 seconds, exposure was performed using an IHG-Line exposure machine with a patternless mask. The exposure energy was consistent with the sensitivity values ​​tested above. Adhesion was evaluated by applying 3M tape in a 100-grid (10×10) pattern and then rapidly peeling it off at a 180° angle.

[0042] The evaluation criteria are shown in Table 2 below: Table 2 (3) Dielectric value test Dielectric value: The developed low-dielectric photoresist was spin-coated onto ITO conductive glass, and then a silver electrode with a diameter of 18 mm was deposited. The dielectric value C (pF) of the photoresist was tested using a WK6500B impedance analyzer from the UK. Then, based on the film thickness d (μm) and electrode area S (mm²), the dielectric value was determined. 2 The dielectric value is calculated using the following formula: Photoresist films with a test thickness of 3.5 μm were prepared by controlling the spin coating speed. The performance results of the compositions in Examples 1-6 and Comparative Examples 1-2 are shown in Table 3 below: Table 3 As shown in Table 3, compared with the commercial resin SW7160, the photoresist composition prepared by the resin of this invention has significant advantages in dielectric properties and substrate adhesion. After introducing a thiourea structure into resin A1, the resin polarity and crosslinking ability are improved, and the adhesion of glass and SiNx is somewhat improved; however, it does not meet the requirements, and the dielectric value is too high. After further introducing siloxane structures into resins A2, A3, and A4, stable Si-O-Si bonds are formed with the glass and SiNx surfaces, further improving the adhesion of glass and SiNx, both reaching 5B. At the same time, the dielectric constant is significantly reduced, all less than 3.02, meeting the formulation requirements.

[0043] In Example 1, using A4 resin, the dielectric constant was further reduced to 2.88 while maintaining excellent substrate adhesion. This is because in A4 resin, the long-chain acrylic acid structure reduces the regularity of the molecular chain arrangement and decreases dipole orientation polarization; the siloxane structure reduces molecular polarizability and improves interfacial wetting; and the nadic anhydride structure promotes the formation of a stable cross-linked network under low-temperature conditions, thereby achieving a comprehensive balance of low dielectric, high adhesion, and low-temperature curing performance.

[0044] Furthermore, Examples 2-4 demonstrate that the amount of silane coupling agent in the crosslinking agent and additives has a certain impact on the system performance. Decreasing the amount of PETA increases sensitivity but decreases adhesion; increasing the amount of PETA leads to increased crosslinking density, thus increasing adhesion, but also increasing exposure energy. In summary, Example 1 achieves the best balance between sensitivity, Glass adhesion, SiNx adhesion, and dielectric properties, exhibiting optimal overall performance.

[0045] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention.

[0046] It should be understood that the present invention is not limited to the content already described above, and various modifications and changes can be made without departing from its scope. The scope of the present invention is limited only by the appended claims.

Claims

1. A low-dielectric, alkali-soluble resin, characterized in that, An alkali-soluble resin is obtained by modifying the oligomer of phenolic resin as the main chain with various modifiers; wherein the structural formula of the alkali-soluble resin is as follows (1): Equation (1) In formula (1), n1 represents the degree of polymerization of the phenolic resin, taking the integer value from 5 to 80; n2, n3, and n4 are each independently integers from 0 to 3; R is hydrogen or substituted or unsubstituted C1-C4 alkyl, substituted or unsubstituted C1-C4 alkoxy, substituted or unsubstituted C3-C4 alkyl, or substituted or unsubstituted C3-C4 alkyl. 10 Cycloalkyl, substituted or unsubstituted C6-C 15 Aryl, substituted or unsubstituted C7-C 15 Any one of the aralkyl groups; X has a carboxylic acid group and is connected to the main chain through an ester group; Y has a siloxane structure; Z has a carbon-carbon double bond.

2. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The structural formula of X is as follows (2): Equation (2) In formula (2), X1 is a substituted or unsubstituted C1-C6 alkylene group, a substituted or unsubstituted C2-C8 alkoxy group, or a substituted or unsubstituted C3-C6 alkylene group. 12 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 18 Any of the aralkyl groups.

3. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The structural formula of Y is as follows (3): Equation (3) In formula (3), Y1 is connected to the main chain and is a heteroatom-linked chain; Y2 is a substituted or unsubstituted C1-C5 alkylene group, a substituted or unsubstituted C2-C6 alkoxy subunit, or a substituted Si1-Si group. 10 Siloxane subunits, substituted or unsubstituted C3-C 14 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 20 Any one of the aralkyl groups; Y3, Y4, and Y5 are each independently selected from substituted or unsubstituted C1-C5 alkyl groups and substituted or unsubstituted C1-C6 alkoxy groups.

4. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The structural formula of Z is as follows (4-1) or (4-2): Equation (4-1) Equation (4-2) Z1 is connected to the main chain and is a heteroatom-linked chain; Z2 is a single chemical bond "-", a substituted or unsubstituted C1-C5 alkylene group, a substituted or unsubstituted C2-C6 alkoxy subunit, a substituted or unsubstituted polyethylene oxide chain, or a substituted or unsubstituted C3-C6 alkylene group. 14 Cycloalkyl, substituted or unsubstituted C6-C 16 Aryl, substituted or unsubstituted C7-C 20 Any of the aralkyl groups; Z3 is hydrogen or methyl.

5. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The alkali-soluble resin has any of the following structural formulas (1-2) to (1-4): Equation (1-2) Equation (1-3) Equation (1-4) Where n is an integer from 5 to 80, and q is an integer from 1 to 20.

6. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The alkali-soluble resin has a molecular weight of Mn = 3000~30000 and a molecular weight distribution of PDI = 1.2~3.

0.

7. The low-dielectric, alkali-soluble resin according to claim 1, characterized in that, The epoxy equivalent of the alkali-soluble resin is 400~1000 g / mol.

8. The low-dielectric, alkali-soluble resin according to any one of claims 1 to 7, characterized in that, The modifier includes a first modifier, a second modifier, and a third modifier, and the mass ratio of the phenolic resin, the first modifier, the second modifier, and the third modifier is 100:(10~80):(10~80):(10~80).

9. A photoresist composition, characterized in that, It comprises the following components in parts by weight: 15-21 parts of the alkali-soluble resin as described in any one of claims 1 to 8, 10-20 parts of the crosslinking agent, 1.8-2.2 parts of the photoinitiator, 0.4-0.6 parts of the ultraviolet absorber, 0.2-0.4 parts of the leveling agent, 1.2-2 parts of the silane coupling agent, and 60-68 parts of the organic solvent.

10. The application of the photoresist composition as described in claim 9 in a light-emitting device, characterized in that, In application, the photoresist composition is first attached to the substrate surface by spin coating, scraping, or slot coating, and then pre-baking, exposure, and development are performed to form an island pattern array.

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