A preparation method for high-precision processing on the surface of a ceramic substrate

Abstract

The application provides a preparation method for high-precision processing on the surface of a ceramic substrate, which significantly reduces processing resistance, shortens overall processing time, and improves processing precision and yield. The method is characterized in that: a metal layer is formed on the surface of the ceramic substrate in advance, so that the hard-to-process ceramic substrate surface is converted into a metal surface that is easy to process, and then high-precision polishing and / or machining operations are performed on the metal surface.

Description

Technical Field

[0001] This invention relates to the technical field of ceramic substrate surface processing, specifically a preparation method for high-precision processing on the surface of a ceramic substrate. Background Technology

[0002] Ceramic materials (such as alumina, aluminum nitride, and beryllium oxide) are widely used in power electronics, LED packaging, and radio frequency devices due to their excellent insulation, high thermal conductivity, and mechanical strength. However, ceramics are inherently hard and brittle, and traditional machining methods (such as cutting, drilling, and grinding) suffer from drawbacks such as rapid tool wear, extremely low processing efficiency, high costs, and a tendency to generate microcracks that lead to decreased yield.

[0003] The main reason for the aforementioned problems and shortcomings lies in the high hardness and brittleness of ceramics, which results in high cutting resistance and severe tool wear during machining. Furthermore, machining parameters must be set very conservatively, leading to lengthy processing times for single pieces. Difficulties encountered in solving these problems include: the huge investment required for specialized machining equipment (such as laser and ultrasonic-assisted machining), and the continued difficulty in completely avoiding the heat-affected zone or surface modification layer issues. Summary of the Invention

[0004] To address the aforementioned problems, this invention provides a method for high-precision machining on the surface of a ceramic substrate, which significantly reduces machining resistance, shortens overall machining time, and improves machining accuracy and yield.

[0005] A method for high-precision processing on the surface of a ceramic substrate is characterized by: pre-forming a metal layer on the surface of the ceramic substrate to transform the difficult-to-process ceramic substrate surface into an easy-to-process metal surface, and then performing high-precision grinding and / or machining operations on the metal surface.

[0006] Its further features are: It includes the following processing steps: S1 provides a ceramic substrate; S2, a metal layer is formed on the surface of the ceramic substrate by physical or chemical deposition; S3, the ceramic substrate with the metal layer is subjected to high-precision grinding and / or machining operations.

[0007] Its further characteristic is: It also includes step S4, in which, depending on product requirements, the unprocessed metal layer can be retained as a conductive layer or a heat dissipation layer, or the unprocessed metal layer can be removed by chemical etching or mechanical polishing.

[0008] Its further characteristic is: In step S1, the ceramic substrate is made of alumina, aluminum nitride, beryllium oxide or silicon nitride, the thickness of the ceramic substrate is 0.2 mm to 10 mm, and the ceramic substrate is cleaned. In step S2, the metal layer is made of copper, copper alloy, nickel, or silver; In step S2, the metal layer is formed by, but is not limited to, physical vapor deposition of copper, electroplating of copper, and sputtering of copper; the thickness of the metal layer ranges from 1 μm to 500 μm. Preferably, the thickness of the metal layer is 20 μm to 200 μm; The grinding and / or machining operations include grinding, cutting, drilling, slicing, polishing, etc. The machining accuracy of the grinding and / or machining operations is within ±0.01mm, and the surface roughness Ra is below 0.1μm. Because the metal layer is relatively soft and has good ductility, it plays a role in absorbing stress, preventing micro-cracks, and reducing tool wear during processing. The thickness of the grinding and / or machining operations shall not exceed the thickness of the metal layer, ensuring that the ceramic substrate is not processed.

[0009] The present invention has the following beneficial effects: a. Significantly improved processing efficiency: The metal layer transforms the processing characteristics of the ceramic surface from "hard and brittle" to "tough and soft," allowing for high-speed cutting using conventional metal processing parameters. The overall processing time is reduced by 30% to 70% compared to traditional direct ceramic processing. b. Significantly extended tool life: The tool mainly contacts the metal layer, avoiding direct friction with high-hardness ceramics, thus extending tool life by 3 to 10 times. c. Improved product yield: The buffering effect of the metal layer effectively suppresses ceramic chipping and microcracks, and the yield can be improved to over 95%. d. Higher processing precision: The machinability of the metal layer is better than that of ceramics, and when combined with high-precision machine tools, it can achieve micron-level dimensional control and mirror-level surface quality; e-process has strong compatibility: it covers a variety of plating methods such as PVD copper plating, electroplating copper, and sputtering copper, and is suitable for a variety of ceramic substrates, making it easy to integrate into existing production lines; Added value: The retained metal layer can be directly used as a conductive line, heat dissipation channel or packaging carrier for electronic devices, realizing "processing-function integration". Attached Figure Description

[0010] Figure 1 This is an enlarged schematic diagram of the surface after grinding and polishing using the method of the present invention; The names corresponding to the serial numbers in the diagram are as follows: 10mm alumina ceramic plate, 20mm copper plating layer. Detailed Implementation

[0011] A method for high-precision processing on the surface of a ceramic substrate: a metal layer is pre-formed on the surface of the ceramic substrate to transform the difficult-to-process ceramic substrate surface into an easy-to-process metal surface, and then the metal layer is subjected to high-precision grinding and / or machining operations.

[0012] It includes the following processing steps: S1, A ceramic substrate is provided, the material of which is alumina, aluminum nitride, beryllium oxide or silicon nitride, the thickness of which is 0.2mm to 10mm, and the ceramic substrate is cleaned. S2, A metal layer is formed on the surface of a ceramic substrate by physical or chemical deposition. The metal layer formation method includes, but is not limited to, physical vapor deposition (PVD), electroplating, and sputtering. The thickness of the metal layer ranges from 1 μm to 500 μm. The metal layer is made of copper, copper alloy, nickel, or silver; Physical vapor deposition (PVD) includes magnetron sputtering and evaporation deposition; Electroplating includes DC electroplating and pulse electroplating; Sputtering includes ion beam sputtering and radio frequency sputtering; S3, the ceramic substrate with the metal layer is subjected to high-precision grinding and / or machining operations; Grinding and / or machining operations include grinding, cutting, drilling, slicing, polishing, etc. The machining accuracy of grinding and / or machining operations is within ±0.01mm, and the surface roughness Ra is below 0.1μm. Due to the relatively soft texture and good ductility of the metal layer, it plays a role in absorbing stress, preventing micro-cracks, and reducing tool wear during processing. The thickness of the grinding and / or machining operations should not exceed the thickness of the metal layer to ensure that the ceramic substrate is not machined.

[0013] It also includes step S4, in which, depending on product requirements, the unprocessed metal layer can be retained as a conductive layer or a heat dissipation layer, or the unprocessed metal layer can be removed by chemical etching or mechanical polishing.

[0014] Specific Implementation Example 1, see Figure 1 A 1.0mm thick alumina ceramic plate 10 was cleaned and then a 5μm thick copper layer 20 was deposited by magnetron sputtering PVD. The copper-plated surface was then ground using a high-precision grinding machine. The process was smooth and no chipping occurred. The total processing time was shortened by about 45% compared to traditional direct grinding.

[0015] Specific Implementation Example 2: Take an aluminum nitride ceramic substrate, activate the surface, then pulse electroplat copper to a thickness of 20μm, and then use precision CNC to process the shape. The resulting product has neat edges, no microcracks, and significantly extended tool life.

[0016] Specific embodiment 3: Take a beryllium oxide ceramic substrate, use copper sputtering to form a 300μm copper layer on the surface of the beryllium oxide ceramic, and then perform CNC machining and magnetic polishing to achieve a surface roughness Ra of 0.1μm.

[0017] Before machining ceramics, a metal layer is first formed on the surface of the ceramic substrate through a coating process. The metal layer is used as a "processing buffer layer" to change the surface characteristics of the object being processed, thereby greatly reducing the difficulty of ceramic processing and shortening the processing time.

[0018] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0019] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A method for preparing a ceramic substrate by performing high-precision processing on the surface, characterized in that: It pre-forms a metal layer on the surface of a ceramic substrate, transforming the difficult-to-machine ceramic substrate surface into an easy-to-machine metal surface, and then performs high-precision grinding and / or machining operations on the metal surface.

2. The preparation method for high-precision processing on the surface of a ceramic substrate according to claim 1, characterized in that, It includes the following processing steps: S1 provides a ceramic substrate; S2, a metal layer is formed on the surface of the ceramic substrate by physical or chemical deposition; S3, the ceramic substrate with the metal layer is subjected to high-precision grinding and / or machining operations.

3. The preparation method for high-precision processing on the surface of a ceramic substrate according to claim 2, characterized in that: It also includes step S4, in which, depending on product requirements, the unprocessed metal layer can be retained as a conductive layer or a heat dissipation layer, or the unprocessed metal layer can be removed by chemical etching or mechanical polishing.

4. A method for preparing a ceramic substrate by high-precision processing according to claim 2 or 3, characterized in that: In step S1, the ceramic substrate is made of alumina, aluminum nitride, beryllium oxide or silicon nitride, the thickness of the ceramic substrate is 0.2 mm to 10 mm, and the ceramic substrate is cleaned.

5. The method according to claim 2 or 3, wherein the method is characterized by: In step S2, the metal layer is made of copper, copper alloy, nickel, or silver.

6. The method of claim 5, wherein the method is a method of manufacturing a ceramic substrate with high precision machining on the surface of the ceramic substrate. In step S2, the metal layer is formed by, but is not limited to, physical vapor deposition of copper, electroplating of copper, and sputtering of copper; the thickness of the metal layer ranges from 1 μm to 500 μm.

7. The method of claim 6, wherein the method is a method of manufacturing a ceramic substrate with high precision machining on the surface of the ceramic substrate. The thickness of the metal layer is 20μm to 200μm.

8. The method according to claim 2 or 3, wherein the method is characterized by: The grinding and / or machining operations include grinding, cutting, drilling, slicing, polishing, etc., and the machining accuracy of the grinding and / or machining operations is within ±0.01mm, and the surface roughness Ra is below 0.1μm.

9. The preparation method for high-precision processing on the surface of a ceramic substrate according to claim 8, characterized in that: The thickness of the grinding and / or machining operations shall not exceed the thickness of the metal layer, ensuring that the ceramic substrate is not processed.

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