Down-feed microwave plasma chemical vapor deposition apparatus, method, and storage medium

Abstract

The application provides a down-feed microwave plasma chemical vapor deposition device, method and storage medium. The down-feed microwave plasma chemical vapor deposition device comprises a reaction cavity, a wafer transfer channel is arranged on the side of the reaction cavity, a vacuum transition cavity, a wafer transfer port is arranged at the first end of the vacuum transition cavity, the wafer transfer port is communicated with the wafer transfer channel of the reaction cavity and the inside of the reaction cavity, and a wafer transfer door is in transmission connection with the vacuum transition cavity and used for closing the wafer transfer channel.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a feeddown microwave plasma chemical vapor deposition apparatus, a feeddown microwave plasma chemical vapor deposition method, and a computer-readable storage medium. Background Technology

[0002] Microwave plasma chemical vapor deposition (MPCVD) is one of the mainstream methods for growing high-quality diamonds. Depending on the microwave feeding method, MPCVD equipment can be divided into two types: up-feed and down-feed. In up-feed MPCVD equipment, microwaves are fed in from the top of the cavity, leaving ample space at the bottom. The deposition stage is installed at the bottom and driven by a lifting mechanism. During wafer transfer, the deposition stage descends to free up space above, allowing a robot to reach in from above to pick up and place samples. In down-feed MPCVD equipment, microwaves are fed in from the bottom of the cavity. Key components such as the microwave feed inlet, coaxial coupling antenna, and quartz glass window are located below the cavity. The quartz glass, serving as the microwave coupling window and also providing vacuum sealing, is fragile and easily broken. The dimensions of the coaxial structure are fixed and cannot be changed. The area below the deposition stage is occupied by the microwave feeding system, preventing the deposition stage from descending significantly to create the space needed for wafer transfer.

[0003] In existing feeddown microwave plasma chemical vapor deposition (CPCVD) equipment, wafer transfer can only be performed by opening the top cover. Specifically, during wafer transfer, the top cover of the chamber needs to be opened or the entire chamber needs to be lifted and separated to expose the interior of the reaction chamber to the atmospheric environment. Then, an operator or robotic arm places or removes the wafer from the reaction chamber. After the wafer transfer is completed, the chamber is resealed and evacuated to the vacuum level required for the process. However, this open-cover wafer transfer method requires breaking the vacuum and exposing the reaction chamber to the atmospheric environment for each transfer, inevitably allowing dust particles, moisture, and other gaseous impurities from the air to enter the chamber. In addition, each open-cover wafer transfer requires a series of operations, including opening the cover, transferring the wafer, closing the cover, sealing inspection, rough evacuation, and fine evacuation. Restoring from atmospheric conditions to the high vacuum required for the process often takes tens of minutes or even hours. Frequent open-cover wafer transfers significantly shorten the effective operating time of the equipment, severely restricting production efficiency and capacity.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a feed-down microwave plasma chemical vapor deposition technology that can complete the wafer transfer operation without breaking the vacuum, thus avoiding the particle and water vapor contamination problems caused by breaking the vacuum. At the same time, it eliminates time-consuming steps such as opening and closing the cap and re-vacuuming, significantly shortening the wafer transfer time, thereby effectively improving the yield and process efficiency of diamond growth. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the existing technology, this invention provides a feed-down microwave plasma chemical vapor deposition (PPD) apparatus, a feed-down microwave plasma chemical vapor deposition (PPD) method, and a computer-readable storage medium. This allows for wafer transfer operations without breaking the vacuum, avoiding particle and moisture contamination problems caused by vacuum breaking. It also eliminates time-consuming steps such as opening and closing the cap and re-vacuuming, significantly shortening wafer transfer time and effectively improving the yield and process efficiency of diamond growth.

[0007] Specifically, the feed-down microwave plasma chemical vapor deposition apparatus according to the first aspect of the present invention includes: a reaction chamber having a wafer transfer channel on its side; a vacuum transition chamber having a wafer transfer port at its first end, the wafer transfer port communicating with the wafer transfer channel of the reaction chamber to connect the vacuum transition chamber with the interior of the reaction chamber; and a wafer transfer door installed in the vacuum transition chamber for sealing the wafer transfer channel.

[0008] Furthermore, in some embodiments of the present invention, the surface of the transfer door facing the reaction chamber has a preset curvature, the preset curvature being equal to the curvature of the inner wall of the reaction chamber; the first tilt angle of the upper side of the transfer door being equal to the first tilt angle of the upper side of the transfer channel; the second tilt angle of the lower side of the transfer door being equal to the second tilt angle of the lower side of the transfer channel; the third tilt angle of the left side of the transfer door being equal to the third tilt angle of the left side of the transfer channel; and the fourth tilt angle of the right side of the transfer door being equal to the fourth tilt angle of the right side of the transfer channel.

[0009] Furthermore, in some embodiments of the present invention, the feed-down microwave plasma chemical vapor deposition apparatus further includes a shielding ring installed on the edge of the transfer door to prevent microwave leakage within the reaction cavity.

[0010] Furthermore, in some embodiments of the present invention, the feed-down microwave plasma chemical vapor deposition apparatus further includes: a traversing mechanism installed in the vacuum transition cavity for driving the transfer gate to move in the horizontal direction; and a lifting mechanism installed in the vacuum transition cavity for driving the transfer gate to move in the vertical direction.

[0011] Furthermore, in some embodiments of the present invention, the transverse movement mechanism includes a transverse guide rail and a primary beam, wherein the transverse guide rail is fixedly installed on the side wall of the vacuum transition chamber, the first end of the primary beam is slidably connected to the transverse guide rail, the second end is connected to a transverse cylinder, and the third end is connected to the transfer door, the transverse cylinder drives the primary beam to move in the horizontal direction, thereby driving the transfer door to move in the horizontal direction.

[0012] Furthermore, in some embodiments of the present invention, the third end of the primary crossbeam has a through hole structure, and the transverse movement mechanism further includes a guide rod. The upper end of the guide rod is connected to the transfer door, and its lower end passes through the through hole structure of the primary crossbeam and is fixedly connected to the secondary crossbeam. The secondary crossbeam moves horizontally along with the primary crossbeam via the guide rod.

[0013] Furthermore, in some embodiments of the present invention, the lifting mechanism includes a lifting rod, a three-stage crossbeam, and a floating guide rail. The lower end of the lifting rod is connected to a drive mechanism, and its upper end passes through the bottom plate of the vacuum transition cavity and connects to the three-stage crossbeam. The floating guide rail is fixedly installed on the upper surface of the three-stage crossbeam and slidably connected to the two-stage crossbeam. The lifting rod drives the three-stage crossbeam to move vertically, and the three-stage crossbeam drives the two-stage crossbeam to move vertically via the floating guide rail. In turn, the two-stage crossbeam and the guide rod drive the transfer door to move vertically.

[0014] Furthermore, in some embodiments of the present invention, the feed-down microwave plasma chemical vapor deposition apparatus further includes a water-cooling channel disposed inside the transfer gate for cooling the transfer gate.

[0015] Furthermore, the feeddown microwave plasma chemical vapor deposition method according to a second aspect of the present invention includes the following steps: driving the transfer door to move horizontally via a traversing mechanism of the feeddown microwave plasma chemical vapor deposition apparatus as described in any one of the first aspects of the present invention, so that the transfer door disengages from the transfer channel; driving the transfer door to descend vertically via a lifting mechanism; in response to the completion of the transfer of wafers in the feeddown microwave plasma chemical vapor deposition apparatus, driving the transfer door to rise and reset via the lifting mechanism; and driving the transfer door to move horizontally via the traversing mechanism to close the transfer channel.

[0016] Furthermore, according to a third aspect of the present invention, a computer-readable storage medium is provided thereon storing computer instructions. When the computer instructions are executed by a processor, the feed-down microwave plasma chemical vapor deposition method as described in the second aspect of the present invention is implemented. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of a feed-down microwave plasma chemical vapor deposition apparatus according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic diagram of the structure of a reaction chamber provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic diagram of the structure of a transfer door provided according to some embodiments of the present invention is shown.

[0021] Figure 4 A schematic diagram of the structure of a shielding ring and a sealing ring provided according to some embodiments of the present invention is shown.

[0022] Figure 5 A schematic diagram of a feed-down microwave plasma chemical vapor deposition apparatus according to some embodiments of the present invention is shown.

[0023] Figure 6 A schematic diagram of the transverse movement mechanism provided according to some embodiments of the present invention is shown.

[0024] Figure 7 A structural schematic diagram of a lifting mechanism provided according to some embodiments of the present invention is shown.

[0025] Figure 8 A schematic flowchart of a feed-down microwave plasma chemical vapor deposition method according to some embodiments of the present invention is shown.

[0026] Figure 9 A schematic diagram of a feed-down microwave plasma chemical vapor phase system according to some embodiments of the present invention is shown.

[0027] Figure label: 10. Reaction Chamber 11. Video Transfer Channel 20 Vacuum transition cavity 21 Slit valve 31. Film Transfer Scandal 311 Shielding Ring 312 Sealing Ring 32 Transverse guide rails 33 First-level crossbeam 34 transverse cylinder 35 Guide rod 36 Secondary crossbeams 41. Lifting mast 42. Level 3 crossbeam 43 Floating guide rail 51 servo motors 52 Linear Module 53 Lifting mast fixing seat 54 Vacuum Bellows 61 Water-cooled aisle 62 Inlet 63 Outlet 70 Transmission cavity 80 Load latch cavity Detailed Implementation

[0028] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0029] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0030] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0031] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0032] As mentioned above, microwave plasma chemical vapor deposition (MPCVD) is one of the mainstream methods for growing high-quality diamonds. Depending on the microwave feeding method, MPCVD equipment can be divided into two types: up-feed and down-feed. In up-feed MPCVD equipment, microwaves are fed from the top of the cavity, leaving ample space at the bottom. The deposition stage is installed at the bottom and driven by a lifting mechanism. During wafer transfer, the deposition stage descends to free up space above, allowing a robot to reach in from above to pick up and place samples. In down-feed MPCVD equipment, microwaves are fed from the bottom of the cavity. Key components such as the microwave feed inlet, coaxial coupling antenna, and quartz glass window are located below the cavity. The quartz glass, serving as the microwave coupling window and also providing vacuum sealing, is fragile and easily broken. The dimensions of the coaxial structure are fixed and cannot be changed. The area below the deposition stage is occupied by the microwave feeding system, preventing the deposition stage from descending significantly to create the space needed for wafer transfer.

[0033] In existing feeddown microwave plasma chemical vapor deposition (CPCVD) equipment, wafer transfer can only be performed by opening the top cover. Specifically, during wafer transfer, the top cover of the chamber needs to be opened or the entire chamber needs to be lifted and separated to expose the interior of the reaction chamber to the atmospheric environment. Then, an operator or robotic arm places or removes the wafer from the reaction chamber. After the wafer transfer is completed, the chamber is resealed and evacuated to the vacuum level required for the process. However, this open-cover wafer transfer method requires breaking the vacuum and exposing the reaction chamber to the atmospheric environment for each transfer, inevitably allowing dust particles, moisture, and other gaseous impurities from the air to enter the chamber. In addition, each open-cover wafer transfer requires a series of operations, including opening the cover, transferring the wafer, closing the cover, sealing inspection, rough evacuation, and fine evacuation. Restoring from atmospheric conditions to the high vacuum required for the process often takes tens of minutes or even hours. Frequent open-cover wafer transfers significantly shorten the effective operating time of the equipment, severely restricting production efficiency and capacity.

[0034] To overcome the aforementioned deficiencies in the existing technology, this invention provides a feed-down microwave plasma chemical vapor deposition (PPD) apparatus, a feed-down microwave plasma chemical vapor deposition (PPD) method, and a computer-readable storage medium. This allows for wafer transfer operations without breaking the vacuum, avoiding particle and moisture contamination problems caused by vacuum breaking. It also eliminates time-consuming steps such as opening and closing the cap and re-vacuuming, significantly shortening wafer transfer time and effectively improving the yield and process efficiency of diamond growth.

[0035] In some non-limiting embodiments, the feeddown microwave plasma chemical vapor deposition method provided in the second aspect of the present invention can be implemented based on the feeddown microwave plasma chemical vapor deposition apparatus provided in the first aspect of the present invention. Specifically, the feeddown microwave plasma chemical vapor deposition apparatus is equipped with a memory and a controller. The memory includes, but is not limited to, the computer-readable storage medium described in the third aspect of the present invention, on which computer instructions are stored. The controller is connected to the memory and configured to execute the computer instructions stored in the memory to implement the feeddown microwave plasma chemical vapor deposition method provided in the second aspect of the present invention.

[0036] Please refer to Figures 1-3 , Figure 1 A schematic diagram of a feed-down microwave plasma chemical vapor deposition apparatus according to some embodiments of the present invention is shown. Figure 2 A schematic diagram of the structure of a reaction chamber provided according to some embodiments of the present invention is shown. Figure 3 A schematic diagram of the structure of a transfer door provided according to some embodiments of the present invention is shown.

[0037] like Figure 1 As shown, a feed-down microwave plasma chemical vapor deposition (FPCVD) apparatus may include a reaction chamber 10, a vacuum transition chamber 20, and a wafer transfer gate 31. A wafer transfer channel 11 is provided on the side of the reaction chamber 10. The first end of the vacuum transition chamber 20 has a wafer transfer port, which communicates with the wafer transfer channel 11 of the reaction chamber 10 to connect the vacuum transition chamber 20 to the interior of the reaction chamber 10. The wafer transfer gate 31 is installed in the vacuum transition chamber 20 to seal the wafer transfer channel 11.

[0038] This invention places the wafer transfer door 31 on the side of the reaction chamber 10 and works with the vacuum transition chamber 20 to achieve automatic wafer transfer in a vacuum environment. During wafer transfer, the wafer transfer door 31 is disengaged from the wafer transfer channel 11 by the lateral movement mechanism and the lifting mechanism. The wafer transfer robot transfers the wafer into or out of the reaction chamber 10 through the vacuum transition chamber 20, maintaining a vacuum environment throughout the process without breaking the vacuum.

[0039] The above technical solution allows for wafer transfer without breaking the vacuum, avoiding particle and moisture contamination caused by vacuum breaking. It also eliminates time-consuming steps such as opening and closing the cap and re-vacuuming, significantly shortening the wafer transfer time and effectively improving the yield and process efficiency of diamond growth.

[0040] In some embodiments of the present invention, the transfer port of the vacuum transition cavity 20 is connected to the reaction cavity 10 by a flange, so that an independent vacuum transfer channel 11 is formed between the transfer port and the reaction cavity 10.

[0041] like Figures 2-3 As shown, the surface of the transfer door 31 facing the reaction chamber 10 has a shape and size that matches the transfer channel 11. The surface of the transfer door 31 facing the reaction chamber 10 has a preset curvature, which is equal to the curvature of the inner wall of the reaction chamber 10, and the transfer door 31 has the same taper as the transfer channel 11. Simultaneously, the first tilt angle of the upper side of the transfer door 31 is equal to the first tilt angle of the upper side of the transfer channel 11, the second tilt angle of the lower side of the transfer door 31 is equal to the second tilt angle of the lower side of the transfer channel 11, the third tilt angle of the left side of the transfer door 31 is equal to the third tilt angle of the left side of the transfer channel 11, and the fourth tilt angle of the right side of the transfer door 31 is equal to the fourth tilt angle of the right side of the transfer channel 11. For example, the aforementioned first, second, third, and fourth tilt angles can be between 5 degrees and 30 degrees, such as 10 degrees, 15 degrees, or 20 degrees.

[0042] Therefore, when the transfer door 31 is closed, it completely blocks the transfer channel 11. The surface of the transfer door 31 facing the reaction cavity 10 is flush with the inner wall of the reaction cavity 10, so that the inner wall of the cavity maintains its original integrity and does not destroy the circumferential symmetry of the resonant cavity, thereby avoiding adverse effects on the electric field distribution and plasma state.

[0043] Please refer to Figure 4 , Figure 4 A schematic diagram of the structure of a shielding ring and a sealing ring provided according to some embodiments of the present invention is shown.

[0044] like Figure 4 As shown, the shielding ring 311 is installed at the edge of the transfer door 31 to prevent microwave leakage within the reaction cavity 10. Here, the shielding ring 311 can be made of a conductive material. For example, the material of the shielding ring 311 can be selected from at least one of beryllium copper alloy, conductive silicone rubber, and metal braided mesh.

[0045] In some embodiments of the present invention, the transfer door 31 comprises a straight surface and a conical surface. The conical surface is located on the four sides of the transfer door 31 and matches the taper of the inner wall of the transfer channel 11 to achieve a sealed fit. The shielding ring 311 is installed on the straight surface of the transfer door 31, that is, the planar area of ​​the transfer door 31 facing the reaction chamber 10. The outer surface of the shielding ring 311 is in contact with the outer wall of the reaction chamber 10 to keep the chamber potential consistent and prevent microwave leakage from the gap between the transfer door 31 and the transfer channel 11.

[0046] For example, the shielding ring 311 can be an O-ring 312 made of beryllium copper alloy, which is pressed into the mounting groove on the straight edge of the transfer door 31 in an interference fit manner, and makes close contact with the outer wall of the reaction chamber 10 when the door is closed, thereby preventing microwave leakage through the gap between the transfer door 31 and the transfer channel 11.

[0047] In some embodiments of the present invention, the feed-down microwave plasma chemical vapor deposition apparatus further includes a sealing ring 312, which may be an O-ring made of conductive silicone rubber. Here, the sealing ring 312 can be pressed into a mounting groove on the straight surface of the transfer door 31 with an interference fit. Specifically, the straight surface has a mounting groove for mounting the sealing ring 312, or it can be fixed to the edge of the transfer door 31 by a high-temperature conductive adhesive.

[0048] Please refer to the reference. Figures 5-6 , Figure 5 A schematic diagram of a feed-down microwave plasma chemical vapor deposition apparatus according to some embodiments of the present invention is shown. Figure 6 A schematic diagram of the transverse movement mechanism provided according to some embodiments of the present invention is shown.

[0049] like Figure 5 and Figure 6 As shown, a horizontal movement mechanism is installed inside the vacuum transition cavity 20 to drive the plate transfer door 31 to move horizontally. A lifting mechanism is installed inside the vacuum transition cavity 20 to drive the plate transfer door 31 to move vertically.

[0050] Specifically, the transverse movement mechanism includes a transverse guide rail 32 and a primary crossbeam 33. The transverse guide rail 32 is fixedly installed on the side wall of the vacuum transition chamber 20. The first end of the primary crossbeam 33 is slidably connected to the transverse guide rail 32, the second end is connected to a transverse cylinder 34, and the third end is connected to a transfer door 31. The transverse cylinder 34 drives the primary crossbeam 33 to move horizontally, thereby causing the transfer door 31 to move horizontally.

[0051] Specifically, the cylinder body of the transverse cylinder 34 can be fixedly mounted on the bottom plate of the vacuum transition chamber 20, and the piston rod of the transverse cylinder 34 can be connected to the second end of the primary beam 33. When the piston rod of the transverse cylinder 34 extends, it pushes the primary beam 33 to move horizontally along the transverse guide rail 32 towards the reaction chamber 10. The third end of the primary beam 33 drives the transfer door 31 to move towards the transfer channel 11, so that the transfer door 31 is embedded in the transfer channel 11 to achieve closure. When the piston rod of the transverse cylinder 34 retracts, it pulls the primary beam 33 to move horizontally away from the reaction chamber 10 along the transverse guide rail 32. The third end of the primary beam 33 drives the transfer door 31 to disengage from the transfer channel 11, thereby opening the transfer door 31. Thus, the automatic opening and closing of the transfer door 31 in the horizontal direction is achieved through the extension and retraction movement of the transverse cylinder 34.

[0052] In some embodiments of the present invention, the transverse cylinder 34 may be selected from at least one of a pneumatic cylinder, a hydraulic cylinder, and an electric linear actuator. Preferably, the transverse cylinder 34 is a pneumatic cylinder, which has the advantages of fast response speed and simple structure.

[0053] In some embodiments of the present invention, the transverse guide rails 32 are preferably configured as two rails, and the two transverse guide rails 32 are symmetrically installed on the side walls of the vacuum transition cavity 20 and extend parallel to each other in the horizontal direction.

[0054] In some embodiments of the present invention, the third end of the primary crossbeam 33 has a through-hole structure, and the lateral movement mechanism further includes a guide rod 35. The upper end of the guide rod 35 is connected to the transfer door 31, and its lower end passes through the through-hole structure of the primary crossbeam 33 and is fixedly connected to the secondary crossbeam 36. The secondary crossbeam 36 moves horizontally along with the primary crossbeam 33 via the guide rod 35.

[0055] The guide rod 35 can slide up and down within the through-hole structure of the primary crossbeam 33, allowing the secondary crossbeam 36 to move horizontally relative to the primary crossbeam 33 and to move relative to it in the vertical direction. Specifically, the primary crossbeam 33 is fixedly mounted on the transverse guide rail 32 and can only slide horizontally, not vertically. When the transverse cylinder 34 drives the primary crossbeam 33 to move horizontally, the guide rod 35 moves horizontally along with the primary crossbeam 33 within the through-hole structure, thereby driving the secondary crossbeam 36 and the transfer door 31 to move horizontally. When the lifting mechanism drives the secondary crossbeam 36 to move vertically, the guide rod 35 slides up and down within the through-hole structure of the primary crossbeam 33, while the primary crossbeam 33 remains stationary and does not move up and down with the guide rod 35.

[0056] Please refer to the reference. Figure 5 and Figure 7 , Figure 7 A structural schematic diagram of a lifting mechanism provided according to some embodiments of the present invention is shown.

[0057] like Figure 5 and Figure 7 As shown, the lifting mechanism includes a lifting rod 41, a three-stage crossbeam 42, and a floating guide rail 43. The lower end of the lifting rod 41 is connected to the drive mechanism, while its upper end passes through the bottom plate of the vacuum transition chamber 20 and connects to the three-stage crossbeam 42. The floating guide rail 43 is fixedly installed on the upper surface of the three-stage crossbeam 42 and slidably connected to the second-stage crossbeam 36. The lifting rod 41 drives the three-stage crossbeam 42 to move vertically, and the three-stage crossbeam 42 drives the second-stage crossbeam 36 to move vertically via the floating guide rail 43. In turn, the second-stage crossbeam 36 and the guide rod 35 drive the slide door 31 to move vertically.

[0058] In some embodiments of the present invention, the guide rail of the floating guide rail 43 is fixed to the third-level crossbeam 42, and the slider of the floating guide rail 43 is fixed to the second-level crossbeam 36. The second-level crossbeam 36 moves vertically relative to the third-level crossbeam 42.

[0059] Specifically, when the drive mechanism drives the lifting rod 41 and the third-level crossbeam 42 to move vertically, the third-level crossbeam 42 drives the second-level crossbeam 36 to move vertically via the floating guide rail 43, and then drives the transfer door 31 to move vertically via the second-level crossbeam 36 and the guide rod 35. Here, since the first-level crossbeam 33 is fixedly installed on the horizontal guide rail 32, it can only slide horizontally and cannot move vertically. The guide rod 35 slides up and down in the through-hole structure of the first-level crossbeam 33, while the first-level crossbeam 33 does not move up and down with the guide rod 35.

[0060] Therefore, the primary crossbeam 33 only provides guidance and drive in the horizontal direction, while the secondary crossbeam 36 moves horizontally along with the primary crossbeam 33, but moves independently in the vertical direction, thus achieving decoupling of horizontal and vertical motion. This decoupling allows the traversing mechanism and the lifting mechanism to work independently without interfering with each other.

[0061] In some embodiments of the present invention, the lifting mechanism further includes a servo motor 51, a linear module 52, and a lifting rod fixing seat 53. The servo motor 51 is mounted on the bottom of the vacuum transition cavity 20 to provide vertical driving force. The linear module 52 is driven by the servo motor 51 and includes a lead screw and a guide rail. The lifting rod fixing seat 53 is mounted on the slider of the linear module 52 and moves vertically with the slider. Specifically, the servo motor 51 is mounted on the outer side (i.e., the atmospheric side) of the bottom plate of the vacuum transition cavity 20, and the output shaft of the servo motor 51 is connected to the lead screw of the linear module 52. When the servo motor 51 rotates, it drives the lead screw to rotate, and the slider on the lead screw converts the rotational motion into linear motion, moving vertically along the guide rail. The lifting rod fixing seat 53 is fixedly mounted on the slider of the linear module 52 and moves vertically with the slider. The lower end of the lifting rod 41 is connected to the lifting rod fixing seat 53, and the upper end passes through the bottom plate of the vacuum transition cavity 20 and connects to the three-stage crossbeam 42.

[0062] Therefore, when the servo motor 51 rotates forward, the slider rises, causing the lifting rod fixing seat 53 and the lifting rod 41 to rise, and the lifting rod 41 pushes the third-stage crossbeam 42 to rise. When the servo motor 51 rotates in reverse, the slider falls, causing the lifting rod fixing seat 53 and the lifting rod 41 to fall, and the lifting rod 41 pulls the third-stage crossbeam 42 to fall. Thus, the lifting and lowering motion of the lifting rod 41 is achieved by the forward and reverse rotation of the servo motor 51, which in turn drives the third-stage crossbeam 42, the floating guide rail 43, the second-stage crossbeam 36, and the transfer door 31 to move in the vertical direction.

[0063] The device also includes a vacuum bellows 54. The upper end of the vacuum bellows 54 is fixed to the upper wall of the vacuum transition chamber 20, and the lower end is fixed to the lifting rod fixing seat 53. The vacuum bellows 54 is sleeved on the outside of the lifting rod 41 to isolate the vacuum chamber from the atmospheric side, allowing the servo motor 51 and the linear module 52 to drive the transfer door 31 inside the vacuum chamber to move vertically from the atmospheric side. This enables the power mechanism to drive the mechanism inside the vacuum chamber to move vertically from the atmospheric side, ensuring vacuum sealing performance.

[0064] Please continue to refer to this. Figure 6 ,like Figure 6 As shown, the device also includes a water-cooling channel 61, located inside the transfer door 31, for cooling the transfer door 31.

[0065] In some embodiments of the present invention, the water cooling pipes of the water cooling channel 61 can be disposed in the vertical guide rod 35. The upper end of the guide rod 35 is connected to the transfer door 31, so that the water cooling channel 61, the guide rod 35, the inlet 62 and the outlet 63 of the transfer door 31 are integrated into a single design. Specifically, the inlet 62 is disposed at the lower end of the first guide rod 35 and communicates with the water cooling pipes in the first guide rod 35, and the outlet 63 is disposed at the lower end of the second guide rod 35 and communicates with the water cooling pipes in the second guide rod 35. Specifically, cooling water flows from the inlet 62 into the water cooling pipes in the first guide rod 35, and flows upward along the channel inside the first guide rod 35 to the water cooling channel 61 inside the transfer door 31. The cooling water flows in the water cooling channel 61 inside the transfer door 31, absorbing the heat conducted from the reaction chamber 10 by the transfer door 31, and cooling the transfer door 31. Subsequently, cooling water flows from the water-cooling channel 61 of the transfer door 31 into the water-cooling pipe in the second guide rod 35, flows downward along the channel inside the second guide rod 35, and finally flows out from the outlet 63, forming a complete cooling circulation loop. Thus, the guide rod 35 serves as both a channel for the cooling water circuit and a guide element for vertical movement, achieving multiple uses with one rod and effectively saving space.

[0066] In some embodiments of the present invention, the first guide rod 35 and the second guide rod 35 may be respectively disposed on both sides of the transfer door 31 and arranged symmetrically so that cooling water flows in from one side and flows out from the other side, thereby ensuring the uniformity of cooling of the transfer door 31.

[0067] The following will describe the working principle of the aforementioned feeddown microwave plasma chemical vapor deposition (PPCVD) apparatus using examples of feeddown microwave plasma chemical vapor deposition methods. Those skilled in the art will understand that these examples of feeddown microwave plasma chemical vapor deposition methods are merely non-limiting embodiments provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating methods. Similarly, the feeddown microwave plasma chemical vapor deposition apparatus is also merely a non-limiting embodiment provided by the present invention and does not constitute a limitation on the subject or order of execution of the steps in these methods.

[0068] Please refer to Figure 8 , Figure 8 A schematic flowchart of a feed-down microwave plasma chemical vapor deposition method according to some embodiments of the present invention is shown.

[0069] like Figure 8As shown, the controller can first execute step S1: drive the transfer door 31 to move horizontally via the lateral movement mechanism, causing the transfer door 31 to disengage from the transfer channel 11. Specifically, the lateral movement cylinder 34 drives the primary crossbeam 33 to move horizontally along the lateral movement guide rail 32. The primary crossbeam 33 drives the secondary crossbeam 36 and the transfer door 31 to move horizontally together via the guide rod 35. For example, the stroke of the lateral movement cylinder 34 is 50 to 200 mm, such as 100 mm, and the movement speed is 10 to 50 mm / s, such as 25 mm / s.

[0070] Subsequently, the controller can execute step S2, driving the transfer door 31 to descend vertically via the lifting mechanism. Specifically, the servo motor 51 drives the linear module 52 to perform lifting motion, the lifting rod fixing seat 53 drives the lifting rod 41 to move vertically, the lifting rod 41 drives the third-level crossbeam 42 to descend, and the third-level crossbeam 42 drives the second-level crossbeam 36 and the transfer door 31 to descend via the floating guide rail 43. For example, the descent stroke is 30mm to 100mm, and the descent speed is 5mm / s to 20mm / s.

[0071] Please refer to this. Figure 9 , Figure 9 A schematic diagram of a feed-down microwave plasma chemical vapor phase system according to some embodiments of the present invention is shown.

[0072] Please refer to Figure 9 The second end of the vacuum transition cavity 20 is provided with a transmission cavity 70 channel interface, which is used to connect with the transmission channel of the transmission cavity 70. This feeddown microwave plasma chemical vapor deposition system also includes a transmission cavity 70. Here, a slit valve 21 is provided at the transmission cavity 70 channel interface to isolate the connection between the vacuum transition cavity 20 and the transmission cavity 70 in the non-transfer state, maintaining the vacuum seal of the vacuum transition cavity 20. Thus, the vacuum transition cavity 20, as a transition space between the reaction chamber 10 and the external transfer system, maintains a vacuum state during the transfer process, avoiding particle and water vapor contamination problems caused by vacuum breaking.

[0073] The feed-down microwave plasma chemical vapor deposition system also includes a load latch cavity 80. Here, the process of transferring the wafer from the atmospheric side to the transmission cavity 70 is as follows: First, the load latch cavity 80 is in an atmospheric state, and the atmospheric side robotic arm places the wafer from the external environment into the load latch cavity 80; then, the door of the load latch cavity 80 is closed and a vacuum is evacuated to a preset vacuum level, so that the load latch cavity 80 reaches the same vacuum level as the transmission cavity 70; subsequently, the valve between the load latch cavity 80 and the transmission cavity 70 is opened, and the robotic arm extends from the transmission cavity 70 into the load latch cavity 80 to remove the wafer, transferring the wafer to the transmission cavity 70, maintaining a vacuum environment throughout the process.

[0074] Then, the slit valve 21 is opened, connecting the vacuum transition chamber 20 with the transfer chamber 70. The wafer transfer robot arm can enter the vacuum transition chamber 20 through the channel interface of the transfer chamber 70 and transfer the wafer into the reaction chamber 10.

[0075] The transverse cylinder 34 drives the first-stage crossbeam 33 to move horizontally, causing the wafer transfer door 31 to disengage from the wafer transfer channel 11 on the side of the reaction chamber 10, thus opening the wafer transfer channel 11. Then, the lifting mechanism drives the wafer transfer door 31 to descend vertically, making room for the robot to move. Subsequently, the vacuum-side robot enters the vacuum transition chamber 20 through the channel interface of the transfer chamber 70, transferring the wafer from the transfer chamber 70 to the deposition stage inside the reaction chamber 10. After the wafer transfer is completed, the lifting mechanism drives the wafer transfer door 31 to rise and reset, and the transverse mechanism drives the wafer transfer door 31 to move horizontally to close the wafer transfer channel 11, restoring the integrity of the inner wall of the reaction chamber 10.

[0076] Please continue to refer to this. Figure 8 The controller can then proceed to step S3, responding to the completion of the transfer, by driving the transfer door 31 to rise and reset via the lifting mechanism. Specifically, when the controller receives the transfer completion signal, the servo motor 51 reverses, driving the lead screw of the linear module 52 to rotate in the opposite direction. The slider on the lead screw drives the lifting rod fixing seat 53 and the lifting rod 41 to rise vertically. The lifting rod 41 pushes the third-level crossbeam 42 to rise, and the third-level crossbeam 42 drives the second-level crossbeam 36 to rise vertically via the floating guide rail 43. This, in turn, drives the transfer door 31 to rise vertically via the second-level crossbeam 36 and the guide rod 35, causing the transfer door 31 to rise back to a position aligned with the transfer channel 11. During this process, the first-level crossbeam 33 remains stationary, the guide rod 35 slides upward in the through-hole structure of the first-level crossbeam 33, and the second-level crossbeam 36 moves horizontally relative to the first-level crossbeam 33 and performs relative motion in the vertical direction. After rising to the correct position, the controller uses the position sensor to provide real-time feedback on the position of the transfer door 31, confirming that the transfer door 31 has been accurately reset to the matching position of the transfer channel 11, so as to ensure a smooth and impact-free rising process and avoid collision damage between the transfer door 31 and the transfer channel 11.

[0077] Step S4: The transfer door 31 is driven to move horizontally via the transverse mechanism, closing the transfer channel 11. Specifically, after the transfer door 31 rises and resets to a position aligned with the transfer channel 11, the controller sends a command to the transverse cylinder 34 of the transverse mechanism. The piston rod of the transverse cylinder 34 extends, pushing the primary crossbeam 33 horizontally along the transverse guide rail 32 toward the reaction chamber 10. The primary crossbeam 33 drives the secondary crossbeam 36 and the transfer door 31 to move horizontally together via the guide rod 35, gradually pushing the transfer door 31 into the transfer channel 11. During the pushing process, the conical surface of the transfer door 31 gradually contacts and engages with the inner wall conical surface of the transfer channel 11. The tilt angles around the transfer door 31 correspond one-to-one with the tilt angles of the transfer channel 11, ensuring that the transfer door 31 can be accurately embedded in the transfer channel 11.

[0078] Thus, in some embodiments of the present invention, after the transfer door 31 is pushed into the transfer channel 11, its outer surface is flush with the inner wall of the reaction chamber 10, and the shielding ring 311 fills the gap between the edge of the transfer door 31 and the inner wall of the transfer channel 11, achieving sealing and microwave shielding. The above sequence of steps ensures the movement safety and sealing reliability of the transfer door 31, without needing to break the vacuum seal of the reaction chamber 10 throughout the process.

[0079] In summary, this invention provides a feed-down microwave plasma chemical vapor deposition (PPCVD) apparatus, a feed-down microwave plasma chemical vapor deposition (PPCVD) method, and a computer-readable storage medium. It enables wafer transfer operations without breaking the vacuum, avoiding particle and moisture contamination problems caused by vacuum breaking. It also eliminates time-consuming steps such as opening and closing the cap and re-vacuuming, significantly shortening the wafer transfer time and thus effectively improving the yield and process efficiency of diamond growth.

[0080] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0081] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A feed-down microwave plasma chemical vapor deposition apparatus, characterized in that, include: The reaction chamber has a plate transfer channel on its side; A vacuum transition cavity, having a transfer port at its first end, the transfer port communicating with the transfer channel of the reaction cavity to connect the vacuum transition cavity with the interior of the reaction cavity; and A transfer door is installed in the vacuum transition cavity to seal the transfer channel.

2. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 1, characterized in that, The surface of the transfer door facing the reaction chamber has a preset curvature, which is equal to the curvature of the inner wall of the reaction chamber. The first tilt angle of the upper side of the transfer door is equal to the first tilt angle of the upper side of the transfer channel. The second tilt angle of the lower side of the transfer door is equal to the second tilt angle of the lower side of the transfer channel. The third tilt angle of the left side of the transfer door is equal to the third tilt angle of the left side of the transfer channel. The fourth tilt angle of the right side of the transfer door is equal to the fourth tilt angle of the right side of the transfer channel.

3. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 1, characterized in that, Also includes: A shielding ring is installed on the edge of the transfer door to prevent microwave leakage within the reaction cavity.

4. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 1, characterized in that, Also includes: A transverse mechanism, installed inside the vacuum transition cavity, is used to drive the transfer door to move horizontally. as well as A lifting mechanism, installed inside the vacuum transition cavity, is used to drive the transfer door to move in the vertical direction.

5. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 4, characterized in that, The transverse movement mechanism includes a transverse guide rail and a primary beam. The transverse guide rail is fixedly installed on the side wall of the vacuum transition chamber. The first end of the primary beam is slidably connected to the transverse guide rail, the second end is connected to a transverse cylinder, and the third end is connected to the transfer door. The transverse cylinder drives the primary beam to move in the horizontal direction, thereby driving the transfer door to move in the horizontal direction.

6. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 5, characterized in that, The third end of the primary crossbeam has a through hole structure. The transverse mechanism also includes a guide rod. The upper end of the guide rod is connected to the transfer door, and its lower end passes through the through hole structure of the primary crossbeam and is fixedly connected to the secondary crossbeam. The secondary crossbeam moves horizontally along with the primary crossbeam via the guide rod.

7. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 6, characterized in that, The lifting mechanism includes a lifting rod, a three-stage crossbeam, and a floating guide rail. The lower end of the lifting rod is connected to a drive mechanism, while its upper end passes through the bottom plate of the vacuum transition cavity and connects to the three-stage crossbeam. The floating guide rail is fixedly installed on the upper surface of the three-stage crossbeam and slidably connected to the two-stage crossbeam. The lifting rod drives the three-stage crossbeam to move vertically, and the three-stage crossbeam drives the two-stage crossbeam to move vertically via the floating guide rail. In turn, the two-stage crossbeam and the guide rod drive the slide door to move vertically.

8. The feed-down microwave plasma chemical vapor deposition apparatus as described in claim 1, characterized in that, Also includes: A water-cooling channel is located inside the transfer door and is used to cool the transfer door.

9. A feed-down microwave plasma chemical vapor deposition method, characterized in that, Includes the following steps: The wafer transfer gate is driven to move horizontally by the transverse movement mechanism of the feed-down microwave plasma chemical vapor deposition apparatus as described in any one of claims 1 to 8, so that the wafer transfer gate is disengaged from the wafer transfer channel; The slide door is driven to descend vertically via a lifting mechanism; In response to the completion of wafer transfer in the feeddown microwave plasma chemical vapor deposition equipment, the wafer transfer door is driven to rise and reset via the lifting mechanism; and The transverse mechanism drives the film transfer door to move horizontally, thereby closing the film transfer channel.

10. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the feeddown microwave plasma chemical vapor deposition method as described in claim 9 is implemented.

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