A processing structure for a semiconductor assembly

Abstract

This application discloses a semiconductor component processing structure, relating to the field of semiconductor component processing technology. The processing structure includes an air-floating tray and a graphite disk. The graphite disk has a first protrusion with a beveled sidewall, and the air-floating tray has a first groove with a beveled inner sidewall. The first protrusion is embedded in the first groove, and the key mating angle between the two is controlled between 140° and 160°. A rounded chamfer is provided at the contact edge. This application, through the combination of the large-angle bevel and the rounded chamfer, enables the graphite disk to automatically slide into a specific position on the air-floating tray during rotation, significantly improving the self-alignment capability of the graphite disk on the air-floating tray. This effectively alleviates the eccentricity problem caused by high-temperature deformation, deposition stress, or positioning errors, thereby improving the technical problem of abnormal epitaxial wafer thickness points and enhancing the stability, reliability, and product yield of the process.

Description

Technical Field

[0001] This application relates to the field of semiconductor component processing technology, and in particular to a semiconductor component processing structure. Background Technology

[0002] Silicon carbide epitaxial growth is a key process in the fabrication of high-performance power devices. This process typically requires extreme high-temperature environments, utilizing graphite insulation felts, trays, and support disks to support the substrate and maintain the thermal field distribution within the reaction chamber. In existing technologies, air-floating trays are used in conjunction with graphite disks. A robotic arm places the graphite disk carrying the wafer at a specific position on the air-floating tray, followed by epitaxial layer deposition under high-speed rotation and high-temperature airflow. This process places extremely high demands on the relative positional accuracy between components, structural stability, and the integrity of the surface coating to ensure uniform epitaxial layer thickness and consistent doping concentration.

[0003] However, in long-term actual production applications, due to the extremely high epitaxial growth temperature and the accompanying complex thermal cycle and gas erosion, graphite components are prone to thermal deformation or stress accumulation, which causes relative displacement of the air-floating tray position, thereby affecting the positioning accuracy of the robot's wafer placement, making it impossible for the wafer to be accurately located in a specific area of ​​the air-floating tray. Summary of the Invention

[0004] In view of the above problems, this application provides a semiconductor component processing structure that can solve the technical problem that the robotic arm cannot accurately position the wafer placement position at the center of the air-floating tray due to high-temperature deformation of graphite components, coating stress accumulation, and positioning errors, thereby causing abnormal thickness points of the epitaxial wafer. The specific solution is as follows:

[0005] This application provides a processing structure for a semiconductor component, the processing structure of which includes: an air-floating tray and a graphite disk;

[0006] The graphite disk includes a first body and a first protrusion located on the lower surface of the first body; the sidewall of the first protrusion is an inclined surface;

[0007] The air flotation tray includes a second body and a second protrusion located on the upper surface of the second body; the second protrusion includes a first groove, and the inner wall of the first groove is a slope.

[0008] Wherein, the first protrusion is located within the first groove; the angle between the sidewall of the first protrusion and the lower surface of the first body is α, and the angle between the bottom of the first groove and the inner sidewall of the first groove is β; 140°≤α≤160°, 140°≤β≤160°; the angle between the sidewall of the first protrusion and the upper surface of the first protrusion is a rounded chamfer; the upper surface of the first protrusion is the surface of the first protrusion that faces away from the first body.

[0009] In one possible implementation, the height of the first protrusion in the direction perpendicular to the plane of the first body ranges from 1.5 mm to 2 mm, including the endpoint value.

[0010] In one possible implementation, the chamfer radius of the arc chamfer between the sidewall of the first protrusion and the upper surface of the first protrusion ranges from 2 mm to 3 mm, including the endpoint value.

[0011] In one possible implementation, the depth of the first groove, in a direction perpendicular to the plane of the second body, ranges from 1.5 mm to 2 mm, including the endpoint values.

[0012] In one possible implementation, the second protrusion further includes a peripheral protrusion structure surrounding the first groove;

[0013] The width of the upper surface of the peripheral protrusion structure ranges from 1mm to 1.5mm, including the endpoint values; the upper surface of the peripheral protrusion structure is the surface of the peripheral protrusion structure that is away from the second main body.

[0014] In one possible implementation, the angle between the upper surface of the peripheral protrusion structure and the inner wall of the first groove is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0015] The angle between the upper surface of the peripheral protrusion structure and the sidewall of the peripheral protrusion structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0016] In one possible implementation, the distance between the sidewall of the peripheral protrusion structure and the sidewall of the second body ranges from 30mm to 40mm, including the endpoint value;

[0017] The angle between the upper surface of the second body and the side wall of the second body is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value;

[0018] The angle between the lower surface of the second body and the side wall of the second body is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value.

[0019] In one possible implementation, the semiconductor component's fabrication structure further includes a ring structure; the graphite disk further includes a third protrusion located on the upper surface of the first body;

[0020] The ring structure includes a second groove with a hollowed-out area at the bottom; the third protrusion is located within the hollowed-out area, and the upper surface of the third protrusion is on the same plane as the bottom of the second groove.

[0021] The ring structure surrounds the first body and the third protrusion, and the ring structure covers the sidewall of the first body, the upper surface of the first body exposed by the third protrusion, and the sidewall of the third protrusion.

[0022] The second groove is used to place the semiconductor component to be processed; after the semiconductor component to be processed is placed in the second groove, the distance between the sidewall of the semiconductor component to be processed and the inner sidewall of the second groove is 1mm-1.5mm, including the endpoint value.

[0023] In one possible implementation, the inner wall of the second groove includes a first surface and a second surface that are adjacent to each other.

[0024] The first surface is adjacent to the bottom of the second groove, and the first surface is a vertical surface; the second surface is an inclined surface.

[0025] Wherein, after the semiconductor component to be processed is placed in the second groove, the height of the first surface is less than the thickness of the semiconductor component to be processed; the height of the first surface ranges from 0.2mm to 0.3mm, including the endpoint values.

[0026] In one possible implementation, the included angle between the first surface and the second surface is a rounded chamfer, and the chamfer radius ranges from 0.5 mm to 1 mm, including the endpoint value;

[0027] The angle between the second surface and the upper surface of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value;

[0028] The angle between the upper surface of the ring structure and the outer sidewall of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value;

[0029] The angle between the outer wall of the ring structure and the lower surface of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0030] By employing the above technical solution, the semiconductor component processing structure provided in this application embeds the first protrusion of a graphite disk into the first groove of an air-floating tray. The angle α between the sidewall of the first protrusion and the lower surface of the first main body, and the angle β between the bottom of the first groove and the inner sidewall, are both set to be between 140° and 160°. Furthermore, based on a large-angle bevel, the top corner of the first protrusion is designed as a rounded chamfer. This allows the graphite disk, containing the semiconductor component to be processed, to automatically slide into a specific position on the air-floating tray during rotation, such as the center of the air-floating tray, when the graphite disk is deformed and cannot be placed in its designated position on the air-floating tray. This significantly improves the self-alignment capability of the graphite disk on the air-floating tray, effectively alleviates the eccentricity problem caused by high-temperature deformation, deposition stress, or positioning errors, and thus improves the technical problem of abnormal epitaxial wafer thickness points, enhancing the stability, reliability, and product yield of the process. Attached Figure Description

[0031] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0032] Figure 1 A schematic diagram of the fabrication structure of a semiconductor component provided in an embodiment of this application;

[0033] Figure 2 An embodiment provided in this application Figure 1 A partially enlarged schematic diagram of the right half of the graphite disk, ring structure, and semiconductor component to be processed;

[0034] Figure 3 An embodiment provided in this application Figure 1 A partially enlarged schematic diagram of the right half of the air flotation tray;

[0035] Figure 4 A schematic diagram illustrating abnormal concentration points in existing technical solutions;

[0036] Figure 5 This is a schematic diagram of the thickness points after processing a semiconductor component-based fabrication structure, as provided in an embodiment of this application. Detailed Implementation

[0037] The embodiments of this application are described below with reference to the accompanying drawings. The terminology used in the implementation section of this application is only for explaining specific embodiments and is not intended to limit the application. Those skilled in the art will recognize that, with technological advancements and the emergence of new scenarios, the technical solutions provided in the embodiments of this application are also applicable to similar technical problems.

[0038] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0039] It should be noted that the directional terms appearing in this application are based on the relative positional relationships shown in the attached drawings and should not be taken as absolute limitations on this application.

[0040] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the implementation methods provided in the embodiments of this application can be combined with each other without contradiction.

[0041] refer to Figure 1 , Figure 1 This is a schematic diagram of the fabrication structure of a semiconductor component provided in an embodiment of this application, with reference to... Figure 2 , Figure 2 An embodiment provided in this application Figure 1 A partially enlarged schematic diagram of the right half of the graphite disk, ring structure, and semiconductor component to be processed, for reference. Figure 3 , Figure 3 An embodiment provided in this application Figure 1 A partially enlarged schematic diagram of the right half of the air-floating tray. The processing structure of the semiconductor component provided in this application embodiment includes: an air-floating tray 12 and a graphite disk 11.

[0042] The graphite disk 11 includes a first body 111 and a first protrusion 112 located on the lower surface of the first body 111; the sidewall of the first protrusion 112 is an inclined surface.

[0043] The air flotation tray 12 includes a second body 121 and a second protrusion located on the upper surface of the second body 121; the second protrusion includes a first groove 122, and the inner sidewall of the first groove 122 is a slope.

[0044] Wherein, the first protrusion 112 is located within the first groove 122; the angle between the sidewall of the first protrusion 112 and the lower surface of the first body 111 is α, and the angle between the bottom of the first groove 122 and the inner sidewall of the first groove 122 is β; 140°≤α≤160°, 140°≤β≤160°; the angle between the sidewall of the first protrusion 112 and the upper surface of the first protrusion 112 is a rounded chamfer; the upper surface of the first protrusion 112 is the surface of the first protrusion 112 that faces away from the first body 111.

[0045] Specifically, in this embodiment, the graphite disk 11 serves as the direct carrier for the semiconductor component 14 to be processed, and is typically made of high-purity graphite material to adapt to the high-temperature epitaxial growth environment. The first body 111 forms the main support plane of the graphite disk 11, and the first protrusion 112 is integrally formed on the lower surface of the first body 111, serving as the core structure for positioning and mating. The sidewall of the first protrusion 112 is designed as a slope, i.e., a conical structure with a certain angle of inclination to the vertical direction, rather than a traditional vertical sidewall. This design provides a geometric basis for subsequent self-alignment guidance. It is understood that the first protrusion 112 and the first body 111 can be integrally formed, or they can be separately processed and then fixedly connected by high-temperature resistant adhesives or threaded connections. This embodiment does not impose any special limitations on this.

[0046] The air-floating tray 12 serves as the bottom support base. Its second main body 121 typically contains an airflow channel. High-pressure gas is sprayed onto the surface to form an air film, thereby suspending and supporting the graphite disk 11, achieving contactless or low-friction relative movement. A second protrusion extends from the upper surface of the second main body 121, providing a positioning groove structure that mates with the first protrusion 112. The first groove 122 is formed on the upper part of the second protrusion, its shape matching the first protrusion 112. The first protrusion 112 is located within the first groove 122, forming a nested fit between the protrusion and the groove. This nested fit not only restricts the translational freedom of the graphite disk 11 in the horizontal plane but also achieves a guiding function through the inclined contact.

[0047] The included angles α and β are set within an obtuse angle range of 140° to 160°. This larger obtuse angle design allows for a greater horizontal restoring force under the influence of centrifugal force or gravity, propelling the graphite disk 11 towards the center. If the angle is too small, the guiding force is insufficient, making it difficult to overcome friction and achieve automatic alignment; if the angle is too large, the positioning accuracy decreases. Therefore, this angle range is the optimal choice for balancing self-alignment sensitivity and positioning stability. As one implementation, the specific values ​​of included angles α and β can be selected as 150°, or finely adjusted within the above range according to the friction coefficient of the graphite material and the air buoyancy pressure, for example, set to 145° or 155°. It should be noted that the included angles α and β can be the same or different.

[0048] Meanwhile, based on the large-angle bevel, the corner of the top of the first protrusion 112 is designed as a rounded chamfer. This allows the graphite disk 11, which holds the semiconductor component 14 to be processed, to automatically slide into a specific position on the air-floating tray 12 during rotation, such as the center of the air-floating tray 12, when the graphite component is deformed and cannot be placed in its specific position on the air-floating tray 12. This significantly improves the self-alignment capability of the graphite disk 11 on the air-floating tray 12, effectively alleviates the eccentricity problem caused by high-temperature deformation, deposition stress, or positioning error, and thus improves the technical problem of abnormal epitaxial wafer thickness points, thereby improving the stability, reliability, and product yield of the process.

[0049] Optionally, the chamfer radius of the arc chamfer between the sidewall of the first protrusion 112 and the upper surface of the first protrusion 112 is in the range of 2mm-3mm, including the endpoint value.

[0050] In an optional embodiment of this application, the height of the first protrusion 112 in the direction perpendicular to the plane of the first body 111 ranges from 1.5mm to 2mm, including the endpoint value.

[0051] Specifically, in this embodiment, the height parameter represents the length of the first protrusion 112 extending in the vertical direction, that is, the distance between the bottom end of the first protrusion 112 and the lower surface of the first body 111.

[0052] The height of the first protrusion 112 is set within the aforementioned range primarily to balance the stability of the fit and the assembly tolerance between the graphite disk 11 and the air-floating tray 12. If the height of the first protrusion 112 is less than 1.5mm, its insertion depth into the first groove 122 is insufficient. Under high-speed rotation of the air-floating tray 12, the graphite disk 11 is easily affected by centrifugal force, causing it to shake or even loosen, leading to positioning failure. If the height of the first protrusion 112 is greater than 2mm, it will not only increase the assembly difficulty but may also cause rigid interference between the excessively long first protrusion 112 and the bottom of the first groove 122, hindering the automatic alignment and adjustment of the graphite disk 11 on the air-floating tray 12. Therefore, by controlling the height within the range of 1.5mm to 2mm, both the reliability of the connection structure and the smoothness of the assembly process are ensured. In practical applications, the specific height of the first protrusion 112 can be flexibly selected within this range according to the working conditions, such as 1.6mm, 1.8mm, or 1.9mm, etc. This embodiment does not impose any special limitations on this.

[0053] Compared with the existing structure, this application increases the height of the first protrusion 112, mainly to prevent the graphite disk 11 from being thrown out of the air-floating tray 12 due to excessive rotational air during the rotation process.

[0054] In an optional embodiment of this application, the depth of the first groove 122 in the direction perpendicular to the plane of the second body 121 ranges from 1.5mm to 2mm, including the endpoint value.

[0055] Specifically, in this embodiment, the depth range is designed to form a precise dimensional fit with the height of the first protrusion 112 of the graphite disk 11, ensuring that when the first protrusion 112 is embedded in the first groove 122, the two can form a stable contact and support.

[0056] For example, when the depth of the first groove 122 is 1.5mm, it is suitable for applications where vertical installation space is limited, minimizing the overall thickness of the component while ensuring connection reliability. When the depth of the first groove 122 is 2mm, it provides a deeper embedding stroke, thereby providing stronger lateral restraint during high-speed rotation of the semiconductor component and effectively suppressing unexpected radial displacement or axial runout of the graphite disk 11 caused by centrifugal force or process airflow disturbance. In addition, the depth range of 1.5mm to 2mm takes into account the thermal expansion compensation requirements under high-temperature environments, avoiding the risk of thermal expansion interference caused by excessive depth, and preventing connection loosening or decreased alignment accuracy caused by excessive depth, thus ensuring the structural stability of the air-floating tray 12 and the graphite disk 11 under extreme conditions.

[0057] In an optional embodiment of this application, the second protrusion further includes: a peripheral protrusion structure 123 surrounding the first groove 122, wherein the width of the upper surface of the peripheral protrusion structure 123 is in the range of 1mm-1.5mm, including the endpoint value; the upper surface of the peripheral protrusion structure 123 is the surface of the peripheral protrusion structure 123 that is away from the second body 121.

[0058] The angle between the upper surface of the peripheral protrusion 123 and the inner wall of the first groove 122 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value; the angle between the upper surface of the peripheral protrusion 123 and the side wall of the peripheral protrusion 123 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0059] Specifically, in this embodiment, the main function of the peripheral protrusion structure 123 is to provide physical restraint on the lateral movement of the graphite disk 11 when it is placed on the air-floating tray 12, so as to prevent it from radially sliding during subsequent rotation or transmission.

[0060] The width of the upper surface of the peripheral protrusion structure 123 can refer to the radial dimension of the peripheral protrusion structure 123, that is, the distance from the inner edge of the first groove 122 to the outermost edge of the peripheral protrusion structure 123. Limiting this width to between 1mm and 1.5mm is based on a comprehensive consideration of structural stability and ease of assembly. If the width is too small, the structural strength of the peripheral protrusion structure 123 will be low, making it difficult to provide effective lateral restraint, and it is prone to failure due to wear during long-term use. If the width is too large, it will increase the overall radial dimension of the air-floating tray 12, potentially occupying too much equipment space, and may also hinder the graphite disc 11 from smoothly sliding into the first groove 122. Within the aforementioned width range of 1mm-1.5mm, the peripheral protrusion structure 123 can maintain sufficient mechanical strength to resist the centrifugal force impact generated by the high-speed rotation of the graphite disc 11, while also ensuring that the graphite disc 11 has appropriate alignment tolerance during placement, which is beneficial for achieving fast and accurate automated assembly.

[0061] Here, rounded chamfering refers to the process of smoothing the corner between two intersecting surfaces into a curved surface, replacing the traditional sharp or right-angled structure. The chamfer radius at the two key locations mentioned above is set to a range of 0.5mm-1mm. This range is determined based on the physical properties of graphite materials under high-temperature epitaxial conditions and the kinetics of coating growth. For example, the chamfer radius can be 0.5mm, 0.75mm, or 1mm; this application does not impose any special limitations on this aspect.

[0062] By setting rounded chamfers within the aforementioned radius range, the high-energy dangling bond density at traditional right-angled or sharp-cornered structures can be effectively eliminated, reducing the chemical activity of the graphite surface and thus inhibiting excessively rapid etching of reactive gases at corners. Simultaneously, the rounded transition facilitates the uniform adsorption and nucleation of reactive gas precursor molecules, preventing stress concentration at sharp corners due to excessively rapid coating growth, thereby preventing microcracks or even peeling of the coating during high-temperature thermal cycling. This structural design not only enhances the etching resistance and coating adhesion of the surrounding protrusions 123, extending their lifespan, but also significantly reduces the risk of contamination of semiconductor components due to coating particle detachment, ensuring the yield and stability of the epitaxial growth process.

[0063] Furthermore, the rounded chamfer design between the upper surface of the peripheral protrusion structure 123 and the inner wall of the first groove 122 can also enable the graphite disk 11 to slide into a specific position of the air-floating tray 12, such as the center position of the air-floating tray 12, during rotation. This significantly improves the self-alignment capability of the graphite disk 11 on the air-floating tray 12, effectively alleviates the eccentricity problem caused by high-temperature deformation, deposition stress or positioning error, and thus improves the technical problem of abnormal thickness points of epitaxial wafers, thereby improving the stability, reliability and product yield of the process.

[0064] In an optional embodiment of this application, the distance between the sidewall of the peripheral protrusion structure 123 and the sidewall of the second body 121 is in the range of 30mm-40mm, including the endpoint value.

[0065] The angle between the upper surface of the second body 121 and the side wall of the second body 121 is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value.

[0066] The angle between the lower surface of the second body 121 and the side wall of the second body 121 is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value.

[0067] Specifically, in this embodiment, the distance between the sidewall of the peripheral protrusion structure 123 and the sidewall of the second main body 121 can refer to the horizontal distance between the outer edge contour of the peripheral protrusion structure 123 and the overall edge contour of the air-floating tray 12. Setting this distance in the range of 30mm to 40mm is primarily to provide sufficient edge structure for the air-floating tray 12, balancing the stress distribution in the central area of ​​the air-floating tray 12 when bearing the graphite disk 11 with the deformation resistance of the edge area. If the distance is too small, the edge structure of the air-floating tray 12 will be too narrow, making it prone to thermal warping under high-temperature conditions; if the distance is too large, it will unnecessarily increase the overall size and weight of the air-floating tray 12 and may interfere with the airflow distribution inside the equipment. Therefore, the range of 30mm-40mm is the preferred size after comprehensively considering structural strength, thermal stability, and spatial layout.

[0068] For the angled region between the upper surface of the second body 121 and its sidewall, i.e., the corner of the top edge of the air-floating tray 12, setting it as a rounded chamfer with a radius limited to 2mm to 3mm effectively eliminates the stress concentration effect caused by sharp corners. In the high-temperature process of semiconductor epitaxial growth, graphite materials are prone to internal stress due to uneven thermal expansion. Sharp corners are often the starting point for crack initiation. Using a rounded chamfer with a larger radius can significantly reduce the local stress peak at this location, improve the thermal shock resistance and structural strength of the air-floating tray 12, and prevent edge cracking or chipping. At the same time, the rounded chamfer design can effectively eliminate the high-energy dangling bond density at traditional right-angle or sharp-corner structures, reduce the chemical activity of the graphite surface, and thus inhibit the localized excessively rapid etching of reactive gases at the corners. Furthermore, the rounded transition facilitates the uniform adsorption and nucleation of reactive gas precursor molecules, avoiding stress concentration at sharp corners due to excessively rapid coating growth, thereby preventing microcracks or even peeling of the coating during high-temperature thermal cycling. This structural design not only enhances the etching resistance and coating adhesion of the air-floating tray 12, extending its service life, but also significantly reduces the risk of contamination of semiconductor components due to coating particle shedding, ensuring the yield and stability of the epitaxial growth process.

[0069] For the angled area between the lower surface of the second body 121 and its sidewall, i.e., the bottom edge corner of the air-floating tray 12, a rounded chamfer with a radius of 2mm to 3mm is also provided. This design ensures the consistency of the upper and lower edge structure of the air-floating tray 12, facilitating manufacturing and achieving stress balance. On the other hand, the bottom chamfer helps the air-floating tray 12 play a guiding role during installation or movement, avoiding damage from bumps. In addition, the rounded chamfer design here can also effectively eliminate the stress concentration effect caused by sharp corners. In the high-temperature process of semiconductor epitaxial growth, graphite materials are prone to internal stress due to uneven thermal expansion. Sharp corners are often the starting point for crack initiation. Using a rounded chamfer with a larger radius can significantly reduce the local stress peak at this point, improve the thermal shock resistance and structural strength of the air-floating tray 12, and prevent cracking or chipping at the edge. At the same time, the rounded chamfer design can also effectively eliminate the high-energy dangling bond density at traditional right-angle or sharp-corner structures, reduce the chemical activity of the graphite material surface, and thus inhibit the localized excessively rapid etching of reactive gases at the corners. Meanwhile, the rounded transition facilitates the uniform adsorption and nucleation of reactive gas precursor molecules, preventing stress concentration at sharp corners due to excessively rapid coating growth, thus preventing microcracks or even peeling of the coating during high-temperature thermal cycling. This structural design not only enhances the etching resistance and coating adhesion of the air-floating tray 12, extending its service life, but also significantly reduces the risk of contamination of semiconductor components due to coating particle detachment, ensuring the yield and stability of the epitaxial growth process.

[0070] In an optional embodiment of this application, the processing structure of the semiconductor component further includes: a ring structure 13; the graphite disk 11 further includes a third protrusion 113 located on the upper surface of the first body 111.

[0071] The ring structure 13 includes a second groove 131, the bottom of which has a hollow area; the third protrusion 113 is located within the hollow area, and the upper surface of the third protrusion 113 is on the same plane as the bottom of the second groove 131.

[0072] The ring structure 13 surrounds the first body 111 and the third protrusion 113, and the ring structure 13 covers the sidewall of the first body 111, the upper surface of the first body 111 exposed by the third protrusion 113, and the sidewall of the third protrusion 113.

[0073] The second groove 131 is used to place the semiconductor component 14 to be processed; after the semiconductor component 14 to be processed is placed in the second groove 131, the distance between the sidewall of the semiconductor component 14 to be processed and the inner sidewall of the second groove 131 is 1mm-1.5mm, including the endpoint value.

[0074] Specifically, in this embodiment, unlike conventional simple stacking designs, this application uses a third protrusion 113 embedded in the hollowed-out area at the bottom of the ring structure 13 to form an interlocking positioning reference. This nested structure ensures that the ring structure 13 has extremely high positioning accuracy relative to the graphite disk 11 in the horizontal direction, effectively preventing the offset of the bearing position of the semiconductor component 14 to be processed due to slight displacement of the ring structure 13 during processing or high temperature. At the same time, the upper surface of the third protrusion 113 and the bottom of the second groove 131 are coplanar, so that the two together form a continuous and flat support platform, providing a stable bearing surface for the semiconductor component 14 to be processed, which is beneficial to ensuring temperature uniformity during the epitaxial growth process.

[0075] The second groove 131 is used to place the semiconductor component 14 to be processed. After the semiconductor component 14 is placed in the second groove 131, the distance between the sidewall of the semiconductor component 14 and the inner sidewall of the second groove 131 is 1mm-1.5mm, including the endpoint value. This distance range is a key parameter derived from the analysis of factors such as the difference in thermal expansion coefficient and mechanical tolerance, mainly to balance positioning accuracy and prevent jamming. If the distance is too small, under high temperature environment, when the components undergo slight deformation due to the difference in thermal expansion coefficient, the semiconductor component 14 to be processed is very likely to come into contact with or even jam against the inner sidewall of the second groove 131, i.e., jamming, causing the robot arm to be unable to pick up and place wafers normally; if the distance is too large, the positional tolerance of the semiconductor component 14 to be processed in the second groove 131 will be too large, and its coaxiality during the rotation of the air-floating tray 12 cannot be guaranteed, which will lead to abnormalities in the thickness of the epitaxial growth. This application strictly limits the spacing to the range of 1mm-1.5mm, which not only provides sufficient thermal expansion space for the semiconductor component 14 to be processed and eliminates the carding phenomenon, but also ensures placement accuracy through appropriate lateral constraints, thereby solving the technical problem of abnormal epitaxial wafer thickness points caused by positioning deviation in the prior art.

[0076] In an optional embodiment of this application, the inner wall of the second groove 131 includes a first surface 15 and a second surface 16 that are adjacent to each other; the first surface 15 is adjacent to the bottom of the second groove 131 and is a vertical surface; the second surface 16 is an inclined surface; wherein, after the semiconductor component 14 to be processed is placed in the second groove 131, the height of the first surface 15 is less than the thickness of the semiconductor component 14 to be processed; the height of the first surface 15 is in the range of 0.2mm-0.3mm, including the endpoint value.

[0077] Specifically, in this embodiment, unlike conventional designs that use only right angles or a single inclined plane for guidance, this application designs a composite inner wall structure composed of a vertical section and an inclined plane section. The first surface 15 serves as the initial positioning section when the semiconductor component 14 to be processed is placed into the second groove 131. Its vertical design provides precise radial positioning constraints for the semiconductor component 14, ensuring that the semiconductor component 14 maintains good coaxiality with the ring structure 13 from the initial placement stage. By strictly limiting the height of the first surface 15 to the range of 0.2mm-0.3mm and ensuring that it is less than the thickness of the semiconductor component 14, the semiconductor component 14 can smoothly transition to the inclined area of ​​the second surface 16 after passing through the vertical guide section, avoiding the risk of card jamming caused by an excessively high vertical section.

[0078] The beveled design of the second surface 16 further guides the semiconductor component 14 to slide smoothly to the bottom of the second groove 131, reducing the alignment accuracy requirements during the robotic wafer placement process and effectively preventing the semiconductor component 14 from tilting or shifting due to placement deviation. More importantly, this combination of short vertical lines and beveled surfaces overcomes the limitations of traditional right-angle grooves in high-temperature deposition processes. During semiconductor epitaxial growth, right-angle or sharp-cornered structures easily cause local enrichment of reactive gases, leading to excessively rapid coating growth and a loose structure in that area, resulting in stress concentration and peeling off during thermal cycling, contaminating the semiconductor component 14. This application, by optimizing the height of the first surface 15 and coordinating with the beveled transition of the second surface 16, significantly reduces the reactive gas retention space at the bottom corner of the groove, suppresses abnormally rapid coating growth, and makes the coating deposition more uniform and dense, thereby greatly reducing the risk of particle defects caused by coating peeling and improving the processing yield of semiconductor components.

[0079] In an optional embodiment of this application, the included angle between the first surface 15 and the second surface 16 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0080] The angle between the second surface 16 and the upper surface of the ring structure 13 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0081] The angle between the upper surface of the ring structure 13 and the outer side wall of the ring structure 13 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0082] The angle between the outer wall of the ring structure 13 and the lower surface of the ring structure 13 is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

[0083] Specifically, in this embodiment, the rounded chamfer design eliminates some of the sharp edges of the ring structure 13, transforming the original high-energy active sites into a smooth transition region composed of multiple microscopically stable crystal planes. This structural change effectively reduces the surface energy at that location, decreasing the number of active sites for the gas etching reaction and thus suppressing particulate contamination caused by etching. Simultaneously, the rounded transition avoids stress concentration, allowing the subsequently deposited coating to adhere more uniformly and densely, reducing the risk of coating cracking and peeling.

[0084] In other words, the rounded corner treatment of all key corner areas of the ring structure 13 in this application, compared with the right-angled sharp corner structure in the prior art, effectively reduces the chemical activity and mechanical stress concentration of the graphite surface. On the one hand, it significantly inhibits gas etching behavior under high-temperature process environment and reduces particulate contamination sources; on the other hand, it promotes uniform and dense deposition of coating materials and prevents the coating from cracking or peeling due to excessive internal stress, thereby greatly improving the yield and process stability in the semiconductor component processing.

[0085] The technical solution of this application will be further explained below by comparison.

[0086] refer to Figure 4 , Figure 4 This is a schematic diagram illustrating anomalies in the concentration points observed in existing technical solutions, for reference. Figure 5 , Figure 5 This is a schematic diagram of the thickness points after processing a semiconductor component-based fabrication structure, as provided in an embodiment of this application.

[0087] Among them, the horizontal coordinate points 8 / 9 / 10 / 11 are concentric circles on the semiconductor component 14 to be processed, and theoretically, the values ​​are small under normal circumstances.

[0088] Therefore, it can be seen that the processing structure of the semiconductor component provided in the embodiments of this application can significantly reduce the density anomaly of the semiconductor component 14 to be processed (e.g., epitaxial wafer).

[0089] As can be seen from the above description, the technical solution of this application has at least the following advantages:

[0090] Advantage 1: Reduces the impact of graphite component deformation causing the robotic arm to fail to position the wafers on the air-floating tray 12. The technical solution of this application addresses the issue of abnormal thickness distribution by adding a tilt angle and rounded chamfer to the graphite components. When the graphite disk 11 containing the semiconductor component 14 to be processed cannot be centered on the air-floating tray 12 due to graphite component deformation, the larger tilt angle and rounded chamfer facilitate the sliding of the graphite disk 11 into the center of the air-floating tray 12 during rotation.

[0091] Advantage 2: Reduces the impact of etching on graphite parts causing particle anomalies. Graphite sharp corners consist of highly unstable "armchair-shaped" and "serrated" edges, containing many highly reactive dangling bonds. These edge atoms are more prone to reaction and being "attacked" and removed. In contrast, the rounded chamfer design of this application is composed of countless extremely small, stable crystal planes, whose microstructural stability is far superior to that of right-angled sharp corners containing a large number of active sites. Adding rounded chamfers to graphite parts helps reduce gas etching behavior on them.

[0092] Thirdly, it reduces the impact of coating cracking and peeling during growth. Sharp corners have more space around them, allowing reactive gases to diffuse from multiple directions, whereas diffusion channels are limited at flat or rounded corners. Sharp corners also result in higher effective reactant concentrations and faster deposition. Atoms at sharp corners are in a high-energy dangling bond state, making them more reactive and more likely to capture and adsorb gaseous precursor molecules (such as methylsilanes and chlorosilanes), thus accelerating nucleation and growth. Because the coating grows rapidly at right angles, it leads to stress concentration and a loose structure, making it prone to microcracks and even peeling at high temperatures. In contrast, the coating at the rounded corners of this application grows more slowly but is denser and has better adhesion, effectively eliminating stress concentration and preventing coating failure and peeling due to thermal cycling.

[0093] The above provides a detailed description of the processing structure of a semiconductor component provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

[0094] It should be noted that each embodiment in this specification focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0095] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that elements inherent to a process, method, article, or apparatus that comprises a list of elements, or elements inherent to such processes, methods, articles, or apparatus, are also included. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0096] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A fabrication structure for a semiconductor component, characterized in that, The semiconductor component's fabrication structure includes: an air-floating tray and a graphite disk; The graphite disk includes a first body and a first protrusion located on the lower surface of the first body; the sidewall of the first protrusion is an inclined surface; The air flotation tray includes a second body and a second protrusion located on the upper surface of the second body; the second protrusion includes a first groove, and the inner wall of the first groove is a slope. Wherein, the first protrusion is located within the first groove; the angle between the sidewall of the first protrusion and the lower surface of the first body is α, and the angle between the bottom of the first groove and the inner sidewall of the first groove is β; 140°≤α≤160°, 140°≤β≤160°; the angle between the sidewall of the first protrusion and the upper surface of the first protrusion is a rounded chamfer; the upper surface of the first protrusion is the surface of the first protrusion that faces away from the first body.

2. The processing structure of the semiconductor component according to claim 1, characterized in that, In the direction perpendicular to the plane of the first body, the height of the first protrusion ranges from 1.5mm to 2mm, including the endpoint value.

3. The processing structure of the semiconductor component according to claim 1, characterized in that, The chamfer radius of the arc chamfer between the sidewall of the first protrusion and the upper surface of the first protrusion ranges from 2mm to 3mm, including the endpoint value.

4. The processing structure of the semiconductor component according to claim 1, characterized in that, In a direction perpendicular to the plane of the second body, the depth of the first groove ranges from 1.5mm to 2mm, including the endpoint value.

5. The processing structure of the semiconductor component according to claim 1, characterized in that, The second protrusion further includes: a peripheral protrusion structure surrounding the first groove; The width of the upper surface of the peripheral protrusion structure ranges from 1mm to 1.5mm, including the endpoint values; the upper surface of the peripheral protrusion structure is the surface of the peripheral protrusion structure that faces away from the second main body.

6. The processing structure of the semiconductor component according to claim 5, characterized in that, The angle between the upper surface of the peripheral protrusion structure and the inner wall of the first groove is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value. The angle between the upper surface of the peripheral protrusion structure and the sidewall of the peripheral protrusion structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

7. The processing structure of the semiconductor component according to claim 5, characterized in that, The distance between the sidewall of the peripheral protrusion structure and the sidewall of the second main body is 30mm-40mm, including the endpoint value; The angle between the upper surface of the second body and the side wall of the second body is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value; The angle between the lower surface of the second body and the side wall of the second body is a rounded chamfer, and the chamfer radius ranges from 2mm to 3mm, including the endpoint value.

8. The processing structure of the semiconductor component according to claim 1, characterized in that, The semiconductor component's processing structure further includes a ring structure; the graphite disk further includes a third protrusion located on the upper surface of the first body; The ring structure includes a second groove with a hollowed-out area at the bottom; the third protrusion is located within the hollowed-out area, and the upper surface of the third protrusion is on the same plane as the bottom of the second groove. The ring structure surrounds the first body and the third protrusion, and the ring structure covers the sidewall of the first body, the upper surface of the first body exposed by the third protrusion, and the sidewall of the third protrusion. The second groove is used to place the semiconductor component to be processed; after the semiconductor component to be processed is placed in the second groove, the distance between the sidewall of the semiconductor component to be processed and the inner sidewall of the second groove is 1mm-1.5mm, including the endpoint value.

9. The processing structure of the semiconductor component according to claim 8, characterized in that, The inner wall of the second groove includes a first surface and a second surface that are adjacent to each other; The first surface is adjacent to the bottom of the second groove, and the first surface is a vertical surface; the second surface is an inclined surface. Wherein, after the semiconductor component to be processed is placed in the second groove, the height of the first surface is less than the thickness of the semiconductor component to be processed; the height of the first surface ranges from 0.2mm to 0.3mm, including the endpoint values.

10. The processing structure of the semiconductor component according to claim 9, characterized in that, The included angle between the first surface and the second surface is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value; The angle between the second surface and the upper surface of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value; The angle between the upper surface of the ring structure and the outer sidewall of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value; The angle between the outer wall of the ring structure and the lower surface of the ring structure is a rounded chamfer, and the chamfer radius ranges from 0.5mm to 1mm, including the endpoint value.

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