current sensor

Abstract

The application discloses a current sensor, comprising a substrate, a magnetic sensing unit arranged on one side of a first surface of the substrate, and a first conductor arranged on a side of the magnetic sensing unit away from the substrate, part of the first conductor being exposed to the substrate for receiving a current to be measured; the magnetic sensing unit is used for sensing a signal magnetic field corresponding to the current to be measured to generate a sensing signal; wherein the first surface is an upper surface or a lower surface of the substrate. The current sensor provided by the application can enhance the strength of the signal magnetic field received by the magnetic sensing unit, improve the sensitivity of the sensor, reduce the volume, adapt to various packaging forms, and reduce the packaging cost.

Description

Technical Field

[0001] This invention relates to the field of testing and measurement technology, and in particular to a current sensor. Background Technology

[0002] Current sensors are used to sense current and have a wide range of applications. The process of sensing current can be converted into sensing a magnetic field based on the magnetic effect of current. Thus, current sensing can be achieved using modules that are sensitive to magnetic fields.

[0003] In existing technologies, when measuring current in a current-carrying conductor, the packaged current sensor is placed close to the conductor. However, no matter how close it is, the magnetic field-sensitive part of the current sensor is always separated from the current-carrying conductor by materials such as the package or substrate. This results in a large distance between the current transmission path and the current sensor, and the strength of the magnetic field generated by the current is weak at the current sensor, leading to low sensitivity of the current sensor to the current.

[0004] In other solutions, to shorten the distance, the current sensor is configured as a metal loop structure to measure the change in magnetic flux formed by the current in the current-carrying conductor, thereby sensing the current. However, this technical solution does not generate an output for steady-state current signals. If an output is required to correspond to steady-state current, an integrator circuit is needed. This will introduce noise into the signal output, causing cumulative errors in the output signal, reducing measurement accuracy, and increasing the cost of the sensor. Summary of the Invention

[0005] One of the objectives of this invention is to provide a current sensor to solve the technical problems of low sensor sensitivity and poor measurement accuracy in the prior art when realizing steady-state current sensing.

[0006] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a current sensor, including a substrate, wherein the substrate is provided with: a substrate, a magnetic sensing unit disposed on one side of a first surface of the substrate, and a first conductor disposed on the side of the magnetic sensing unit away from the substrate, a portion of the first conductor being exposed relative to the substrate for receiving a current to be measured; the magnetic sensing unit is used to sense a signal magnetic field corresponding to the current to be measured to generate a sensing signal.

[0007] Compared with existing technologies, the current sensor provided by this invention, by placing a first conductor within a substrate, particularly through a hierarchical structure within the substrate, significantly reduces the distance between the conductor for receiving the measured current and the magnetic sensing unit. This enhances the strength of the signal magnetic field corresponding to the measured current at the magnetic sensing unit, greatly improving the sensitivity of the current sensor. Furthermore, since the conductor is placed within the substrate, it can receive current with only partial exposure, effectively reducing the overall size of the device or system. This allows for adaptation to various packaging requirements without the need for additional structures, thus reducing packaging costs. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of a current sensor according to an embodiment of the present invention.

[0009] Figure 2 This is a schematic diagram of a substrate according to an embodiment of the present invention.

[0010] Figure 3 This is a graph showing the relationship between the distance between the conductor and the magnetic sensing unit in the circuit sensor of the prior art and the present invention as a function of the signal magnetic field strength.

[0011] Figure 4 This is a schematic diagram of the structure of the first sensing unit according to an embodiment of the present invention.

[0012] Figure 5 This is a schematic diagram of the structure of a magnetic sensing unit according to an embodiment of the present invention.

[0013] Figure 6 This is a schematic diagram of the structure of a magnetic sensing unit according to another embodiment of the present invention.

[0014] Figure 7 This is a schematic diagram of a substrate according to an embodiment of the present invention.

[0015] Figure 8 This is a schematic diagram of a current sensor according to an embodiment of the present invention.

[0016] Figure 9 This is a schematic diagram of a current sensor according to one embodiment of the present invention.

[0017] Figure 10 This is another schematic diagram of a current sensor according to one embodiment of the present invention.

[0018] Figure 11 This is a schematic diagram of the structure of a magnetic sensing unit according to an embodiment of the present invention.

[0019] Figure 12 This is a schematic diagram of a current sensor according to an embodiment of the present invention.

[0020] Figure 13This is a schematic diagram of a current sensor according to an embodiment of the present invention.

[0021] Figure 14 This is a schematic diagram of a current sensor according to an embodiment of the present invention. Detailed Implementation

[0022] The present invention will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of the present invention.

[0023] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0024] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. There is no necessary relationship between "first," "second," and "third," for example, the presence of "second" in an embodiment does not necessarily mean the presence of "first," and so on.

[0025] like Figure 1 and Figure 2 As shown, one embodiment of the present invention provides a current sensor 1000.

[0026] Figure 2 based on Figure 1 It is obtained by cutting along the section line L1.

[0027] The current sensor 1000 is used to sense the current I to be measured.

[0028] The current to be measured, I, can be input from an external current sensor 1000. The current sensor 1000 can sense the current to be measured, I, flowing through itself and generate a sensing signal.

[0029] The current sensor 1000 includes a substrate 100.

[0030] The substrate 100 can at least accommodate the components in the current sensor 1000 used to realize current sensing.

[0031] The substrate 100 can be a planar structure with a preset thickness and size, and its surface can be configured to be smooth or rough. Specifically, the substrate 100 can be a single-layer substrate or a multi-layer substrate. A single-layer substrate may include a metal layer and / or an insulating layer, while a multi-layer substrate may include multiple metal layers and multiple insulating layers. The metal layer can be used to provide conductive paths, mechanical support, or thermal conduction, and can be made of materials such as copper, aluminum, silver, and gold. The insulating layer can be used to isolate the metal layer or itself from the external environment to prevent signal interference, provide mechanical support, etc., and can be made of materials such as silicon nitride (Si3N4), alumina (Al2O3), polyimide (PI), ceramic materials, and epoxy resin.

[0032] The substrate 100 can be fabricated using thin film deposition techniques (such as physical vapor deposition and chemical vapor deposition), wet etching and dry etching, laser processing, imprinting, surface treatment, and packaging techniques. The resulting substrate 100 can be used for applications such as integrated circuit packaging, fabrication of high-frequency circuits, fabrication of power electronic devices, or fabrication of flexible electronics.

[0033] The prepared substrate 100 is considered as a whole. The concept of substrate 100 is different from that of package, and it usually has a thinner thickness and better integration.

[0034] A substrate 10 is disposed within the substrate 100. The substrate 100 may include the substrate 10.

[0035] The substrate 10 can serve as the base material for the substrate 100 and can be used to support other structures in the substrate 100. The substrate 10 can be made of materials such as silicon, glass, ceramic, polyimide, aluminum, or resins and epoxy resins.

[0036] A magnetic sensing unit 200 is disposed within the substrate 100. The substrate 100 may include the magnetic sensing unit 200.

[0037] The magnetic sensing unit 200 is disposed on one side of the first surface 101 of the substrate 10.

[0038] The first surface 101 can be a surface on one side of the substrate 10 in the first direction Z, or a surface on the opposite side of the substrate 10 in the first direction Z. When the first direction Z is defined as upward, the first surface 101 can be the upper surface of the substrate 10 or the lower surface of the substrate 10.

[0039] The first direction Z is perpendicular to the first surface 101 of the substrate 10.

[0040] The magnetic sensing unit 200 can be disposed within the substrate 10, specifically embedded in the first surface 101 of the substrate 10. The surface of the magnetic sensing unit 200 in the first direction Z can be flush with the first surface 101 of the substrate 10. Alternatively, the magnetic sensing unit 200 can protrude from the first surface 101.

[0041] A first conductor 31 is disposed within the substrate 100.

[0042] The first conductor 31 is disposed on the side of the magnetic sensing unit 200 away from the substrate 10.

[0043] The magnetic sensing unit 200 is disposed on one side of the first surface 101 of the substrate 10. When the first direction Z is defined as upward, the first surface 101 is the upper surface of the substrate 10, and the first conductor 31 can be disposed above the magnetic sensing unit 200. Similarly, when the first direction Z is defined as downward, the first surface 101 is the lower surface of the substrate 10, and the first conductor 31 can be disposed below the magnetic sensing unit 200.

[0044] The first conductor 31 is used to receive the current to be measured, I.

[0045] The current to be measured I corresponds to the generation of a signal magnetic field Bs, and the signal magnetic field Bs can form a magnetic field component at least at the magnetic sensing unit 200.

[0046] The first conductor 31 may include a portion extending along the second direction Y. When the magnetic sensing unit 200 is disposed on the side opposite to the first direction Z of the first conductor 31, the current to be measured I flows through the first conductor 31, and the signal magnetic field Bs can at least form a magnetic field component along the first direction Z at the magnetic sensing unit 200. When the magnetic sensing unit 200 is disposed on the third direction X of the first conductor 31, the signal magnetic field Bs can also form a magnetic field component in the opposite direction of the first direction X at the magnetic sensing unit 200; when disposed on the side opposite to the third direction X, a magnetic field component along the first direction X is formed.

[0047] A portion of the first conductor 31 is exposed relative to the substrate 100. The exposed portion can be used to receive the current to be measured, I.

[0048] The exposure can refer to the portion of the conductor 31 that is not completely covered by the substrate 100; the exposed portion of the first conductor 31 can have a direct or indirect coupling relationship with other media outside the substrate 100.

[0049] The magnetic sensing unit 200 is used to sense the signal magnetic field Bs corresponding to the current to be measured I in order to generate a sensing signal.

[0050] When the current to be measured I passes through the first conductor 31 disposed within the substrate 100, the magnetic sensing unit 200 disposed within the substrate 100 can sense the signal magnetic field corresponding to the current to be measured I. Compared with the magnetic sensing unit 200 and the first conductor 31 disposed separately or at a distance, the magnetic sensing unit 200 can obtain a signal magnetic field with a stronger magnetic field strength under the arrangement provided by the present invention, and the current sensor 1000 has higher sensitivity.

[0051] Figure 3 This illustrates the relationship between the magnetic field strength of the signal magnetic field Bs and the distance d between the first conductor 31 and the magnetic sensing unit 200 when the measured current I is fixed. In the prior art, the conductor for carrying the measured current is disposed outside the chip package structure, and the distance between the conductor and the magnetic sensing unit is relatively large. Due to the requirements of the package structure, the distance between the conductor and the magnetic sensing unit varies within a range Δd2, corresponding to a range ΔB2 for the signal magnetic field strength. However, in the configuration of the technical solution provided by this invention, the distance between the first conductor 31 and the magnetic sensing unit 200 varies within a range Δd1, corresponding to a range ΔB1 for the signal magnetic field strength. Figure 3 As shown, the variation range ΔB1 is significantly higher than the variation range ΔB2. It can be seen that, under the premise of the same current to be measured I, the first conductor 31 in the technical solution provided by the present invention can generate a higher signal magnetic field strength at the magnetic sensing unit 200, thereby achieving high-precision current sensing.

[0052] The first conductor 31 can be disposed on the first direction Z side of the magnetic sensing unit 200. For example Figure 2 When the current to be measured I is present in the first conductor 31, the corresponding signal magnetic field Bs has magnetic field components parallel to the first direction Z and parallel to the third direction X at the magnetic sensing unit 200 (e.g., the second magnetic sensing unit 22). The magnetic sensing unit 200 can be sensitive to the direction of any magnetic field component generated on it by the signal magnetic field Bs, thereby obtaining information about the current to be measured I.

[0053] The substrate 100 has M wiring layers disposed on it in a direction parallel to the first direction Z. The wiring layers may be... Figure 2 The circuit comprises a first wiring layer 111, a second wiring layer 112, a third wiring layer 113, and a fourth wiring layer 114. The wiring layers can be made of metal or other conductive materials. The wiring layers can be used to form conductors that can receive the measured current I. The wiring layers can also be used to form other circuit structures, or to connect different electronic components in the same layer, or to connect different electronic components in different layers.

[0054] The substrate 100 has N insulating layers disposed on it in a direction parallel to the first direction Z. The insulating layers may be... Figure 2The structure comprises a first insulating layer 121, a second insulating layer 122, a third insulating layer 123, a fourth insulating layer 124, and a fifth insulating layer 125. These insulating layers can be made of silicon dioxide, silicon nitride, aluminum oxide, polyimide, or other insulating materials. The insulating layers can be used to separate wiring layers. They can also be used to isolate electromagnetic interference, which can be interference between wiring layers or interference between external sources and the wiring layers.

[0055] M and N can be the same or different. In some embodiments, M < N.

[0056] In one embodiment, the wiring layer and the insulating layer are alternately disposed in a first direction. The insulating layer can shield interference between adjacent wiring layers, realizing a multi-layer structure of the substrate 100. For example, a first insulating layer 121, a first wiring layer 111, a second insulating layer 122, a second wiring layer 112, a third insulating layer 123, a third wiring layer 113, a fourth insulating layer 124, a fourth wiring layer 114, and a fifth insulating layer 125 are sequentially disposed on the first insulating layer 121 away from the first wiring layer 111. The magnetic sensing unit 200 can be disposed on the side of the first insulating layer 121 opposite to the first wiring layer 111.

[0057] The first direction Z is perpendicular to the first surface 101 of the substrate 10.

[0058] In one embodiment, the wiring layers of the M wiring layers that are furthest from the magnetic sensing unit 200 are used to form the first conductor 31. For example, the M wiring layers include a fourth wiring layer 114, which is disposed furthest from the magnetic sensing unit 200 and is used to form the first conductor 31. The portions of the first wiring layer 114 that are not used to form the first conductor 31 can be cut out or filled with other media.

[0059] The wiring layer away from the magnetic sensing unit 200 may be used for forming the first conductor 31, and the first conductor 31 may be formed by more than just the wiring layer away from the magnetic sensing unit 200. For example, the fourth wiring layer 114 may also have electrodes (e.g., the third electrode 53). For example, the first conductor 31 may also be formed by multiple wiring layers, including the fourth wiring layer 114.

[0060] The thickness of the M wiring layers can be increased layer by layer in the direction away from the magnetic sensing unit 200. When the magnetic sensing unit 200 is disposed on the side opposite to the first direction Z of the substrate 100, the thickness of the M wiring layers increases layer by layer in the first direction Z. When the wiring layers are fabricated using conductive materials such as metals, the greater the thickness of the wiring layers, the lower the impedance, the stronger the current carrying capacity, and the greater the strength of the signal magnetic field that can be generated when the measured current I is applied. Based on this, the first conductor 31 is formed using the wiring layers away from the magnetic sensing unit 100 among the M wiring layers, and a signal magnetic field with a greater magnetic field strength can be generated based on the same measured current I.

[0061] In one embodiment, the wiring layer with the largest thickness among the M wiring layers is used to form the first conductor 31. For example, the M wiring layers include a fourth wiring layer 114, which has the largest thickness and is used to form the first conductor 31.

[0062] In one embodiment, a conductive unit 40 is disposed in the insulating layer for coupling to conductive structures adjacent to the insulating layer. Taking a conductive unit 40 disposed within a fourth insulating layer 124 as an example, this conductive unit 40 can be used to couple to adjacent wiring layers (e.g., fourth wiring layer 114 and third wiring layer 113) of the fourth insulating layer 124, coupling conductive structures located within the two wiring layers to achieve a more complex circuit architecture. Taking a conductive unit 40 disposed within a first insulating layer 121 as an example, this conductive unit 40 can be used to couple a first wiring layer 111 on one side of the first insulating layer 121 to components in the substrate 10 on the other side, enabling power supply or signal reception for the components; the components in the substrate 10 can be a magnetic sensing unit 200 or other functional components (e.g., the first device 201). The conductive structure can be a wiring layer or other conductive components.

[0063] In one embodiment, the N insulating layers include a fifth insulating layer 125 located on the side of the first conductor 31 facing away from the magnetic sensing unit 200. The fifth insulating layer 125 has a first opening op1, which exposes a portion of the first conductor 31 corresponding to the first opening op1 relative to the substrate 100. This opening may also be referred to as a window. Due to the exposure, the portion of the first conductor 31 corresponding to the first opening op1 can be coupled to a structure outside the substrate 100 via wire bonding or other means. For example, the portion of the first conductor 31 can be coupled with a lead. For example, the portion of the first conductor 31 can be used to receive the current to be measured I. For example, the portion of the first conductor 31 can be used to form an electrode of the current sensor 1000; such as... Figure 2 As shown, a first electrode 51 can be formed; the first electrode 51 can be used to receive the current to be measured I.

[0064] In one embodiment, the N insulating layers include a fifth insulating layer 125 located away from the magnetic sensing unit 200. The M wiring layers include a fourth wiring layer 114 located on the side of the fifth insulating layer 125 closest to the magnetic sensing unit 200. The fifth insulating layer 125 has a second opening op2, which exposes a portion of the fourth wiring layer 114 corresponding to the second opening op2 relative to the substrate 100, thereby forming electrodes of the current sensor 1000; as shown... Figure 2 As shown, a third electrode 53 can be formed. Due to the exposure, the electrode formed corresponding to the second opening op2 can be coupled to a structure outside the substrate 100; for example, it can be coupled to a lead. The electrode formed corresponding to the second opening op2 can be coupled to other components inside the substrate 100, realizing the coupling, power supply, and data transmission between the internal and external structures of the substrate 100, so as to complete the coupling, power supply, and data transmission between the current sensor 1000 and the external structure.

[0065] In one embodiment, the M wiring layers include a first wiring layer 111 close to the magnetic sensing unit 200. A first device 201 is also disposed within the substrate 100. The magnetic sensing unit 200 and the first device 201 are coupled through the first wiring layer 111. Thus, the magnetic sensing unit 200 can establish coupling relationships with other components within the substrate 100 through the wiring layers, making full use of the space of the substrate 100. The first device 201 can be disposed at a different location within the substrate 100 than the magnetic sensing unit 200; for example, if the magnetic sensing unit 200 is disposed on the substrate 10, the first device 201 can be disposed on the second wiring layer 112. Alternatively, the first device 201 can be disposed within the substrate 100 at a location close to the magnetic sensing unit 200; for example, if the magnetic sensing unit 200 is disposed on the substrate 10, the first device 201 can also be disposed on the substrate 10, thus forming a configuration with traces running parallel to the first direction Z, making full use of the area of ​​the substrate 10.

[0066] In one embodiment, the M wiring layers include a first wiring layer 111 located near the magnetic sensing unit 200. The N insulating layers include a first insulating layer 121 located on the side of the first wiring layer 111 near the magnetic sensing unit 200. A conductive unit 40 is disposed in the first insulating layer 121. The conductive unit 40 in the first insulating layer 121 can be used to couple the magnetic sensing unit 200 to the first wiring layer 111. A first device 201 is also disposed within the substrate 100. The conductive unit 40 in the first insulating layer 121 can also be used to couple the first wiring layer 111 to the first device 201. The magnetic sensing unit 200 and the first device 201 can be coupled to other wiring layers respectively through the conductive unit 40; the magnetic sensing unit 200 and the first device 201 can also be mutually coupled through the conductive unit 40 and the first wiring layer 111.

[0067] The substrate 100 can also be configured as a combination of the above embodiments.

[0068] In one embodiment, the first conductor 31 includes a first conductor segment 311 extending along a second direction Y. The magnetic sensing unit 200 includes a first sensing unit 21 disposed on the side opposite to a third direction X of the first conductor segment 311. The magnetic sensing unit 200 is at least partially disposed in a direction perpendicular to the extension direction of the first conductor segment 311. When the first conductor 31 receives a current I to be measured, the current I flows through the first conductor segment 311, generating at least a magnetic field component perpendicular to the plane of the first sensing unit 21. The second direction Y and the third direction X can be parallel to the first surface 101 of the substrate 10, and the signal magnetic field Bs generated by the current I can have a magnetic field component perpendicular to the first surface 101. The first direction Z can be perpendicular to the first surface 101, and the signal magnetic field Bs generated by the current I can have a magnetic field component parallel to the first direction Z. The first sensing unit 21 can be sensitive to the vertical direction, and when configured to include devices such as a vertical Hall effect sensor, it can achieve higher sensing accuracy and lower cost.

[0069] The first direction Z is perpendicular to the first surface 101 of the substrate 10. The second direction Y is parallel to the first surface 101 of the substrate 10. The third direction X is parallel to the first surface 101 of the substrate 10.

[0070] We can define the first direction Z as up, the second direction Y as back, and the third direction X as right.

[0071] In one embodiment, the magnetic sensing unit 200 includes a second sensing unit 22 disposed on the third X-direction side of the first conductor segment 311. The magnetic sensing unit 200 is at least partially disposed in a direction perpendicular to the extension direction of the first conductor segment 311, and can obtain a magnetic field component perpendicular to the plane in which the second sensing unit 22 is disposed.

[0072] The third direction X is parallel to the first surface 101 of the substrate 10. The third direction X can be defined as right.

[0073] When the magnetic sensing unit 200 includes both the first sensing unit 21 and the second sensing unit 22, since the two are positioned relative to the first conductor segment 311 in the third direction X and its opposite direction, the magnetic field components of the signal magnetic fields obtained by the two are in opposite directions. The generated sensing signals can be compared, verified, and calculated to make the output result of the current sensor 1000 more accurate.

[0074] In one embodiment, the first conductor 31 includes a second conductor segment 312 extending in a third direction X. A first end of the second conductor segment 312 is used to receive a current to be measured I. A second end of the second conductor segment 312 is coupled to a first end of the first conductor segment 311. When the first conductor 31 receives the current to be measured I, both the first conductor segment 311 and the second conductor segment 312 can generate a magnetic field component at the first sensing unit 21, increasing the signal magnetic field strength that the first sensing unit 21 can receive. The current to be measured I can flow from the second conductor segment 312 into the first conductor 31 and pass through the first conductor segment 311.

[0075] The third direction X is parallel to the first surface 101 of the substrate 10. The third direction X can be defined as right.

[0076] In one embodiment, the first conductor 31 includes a third conductor segment 313 extending in a third direction X. A first end of the third conductor segment 313 is coupled to a second end of the first conductor segment 311. The second end of the third conductor segment 313 is used to output a current to be measured I. The current to be measured I passes through the first conductor segment 311 and flows out from the third conductor segment 313.

[0077] The third direction X is parallel to the first surface 101 of the substrate 10. The third direction X can be defined as right.

[0078] In this embodiment, the magnetic sensing unit 200 includes a first sensing unit 21 and a second sensing unit 22 respectively disposed on both sides of the third-direction X-axis of the first conductor segment 311. Based on the first conductor segment 311 and the third conductor segment 313, the second sensing unit 22 can obtain a larger magnetic field strength.

[0079] In one embodiment, the first end of the first conductor segment 311 is the end of the first conductor segment 311 located in the opposite direction to the second direction Y. The second end of the first conductor segment 311 is the end of the first conductor segment 311 located in the second direction Y. Thus, the first conductor 31 has a Z-shaped appearance.

[0080] The second direction Y is parallel to the first surface 101 of the substrate 10. The second direction Y can be defined as the back direction.

[0081] The substrate 100 can also be configured as a combination of the above embodiments.

[0082] In one embodiment, the substrate 100 is provided with electrodes, which are coupled to a first conductor 31. The first conductor 31 can be formed by creating an opening in the substrate 100 to form an electrode; in this case, the electrode can be a first electrode 51 or a second electrode 52. The substrate 100 can also form an electrode by creating an opening in the insulating layer to expose other wiring layers. This electrode can be coupled to the first conductor 31 through wiring layers and conductive units inside the substrate 100, or it can be coupled to the first conductor 31 through a coupling structure such as wire bonding.

[0083] In one embodiment, the substrate 100 is provided with electrodes, which are coupled to the magnetic sensing unit 200. The substrate 100 can form electrodes by exposing the wiring layer through openings in the insulating layer, and these electrodes can be coupled to the magnetic sensing unit 200 through the wiring layer and conductive units inside the substrate 100.

[0084] The substrate 100 may also be provided with a third electrode 53 for coupling other components within the substrate 100.

[0085] In one embodiment, the current sensor 1000 includes leads. The leads may include a first lead 61 for coupling to a first electrode 51. The leads may include a second lead 62 for coupling to a second electrode 52. The leads may include a third lead 63 for coupling to a third electrode 53.

[0086] The lead includes a first lead segment for coupling to an electrode and a second lead segment extending in a direction away from the substrate. For example, the second lead 62 includes a first lead segment 621 for coupling to the second electrode 52 and a second lead segment 622 extending in a direction away from the substrate 100.

[0087] The lead can be configured as a conductive pin. The lead can be made of a conductive material such as metal and can have a rigid appearance. Relative to the substrate 100, the lead can be bent in a direction parallel to the first direction Z.

[0088] In one embodiment, the current sensor 1000 includes a package 600. The package 600 encapsulates the substrate 100 and the first lead segment. The second lead segment may be exposed relative to the package 600 for coupling the current sensor 1000 to other devices (e.g., back-end systems).

[0089] The current sensor 1000 can also be configured as a combination of the above embodiments.

[0090] In one embodiment, at least two leads are provided on both sides of the substrate 100 (which can be the left and right sides; for example, a third direction X can be defined as right). The second lead segments of each of the two leads each include at least a lead segment extending in a direction perpendicular to the first surface 101. Thus, the second lead segments can serve as supports for the substrate 100, facilitating the fixing of the current sensor 1000 to the system.

[0091] In one embodiment, the first lead segment is wire-coupled to the electrode. For example, the first lead segment of the first lead 61 is wire-coupled to the first electrode 51; the first lead segment of the second lead 62 is wire-coupled to the second electrode 52; and the first lead segment of the third lead 63 is wire-coupled to the third electrode 53.

[0092] The current sensor 1000 may include two sets of leads, respectively disposed on the third direction X side and the third direction X opposite side of the substrate 100. Each set of leads may include four leads. The two sets of leads may be arranged symmetrically about the axis along the second direction Y to maintain the positional balance of the current sensor 1000 after placement. In addition to the first electrode 51, the second electrode 52, and the third electrode 53, the substrate 100 may also be provided with five other electrodes for corresponding coupling with the other five leads; the other five electrodes may be configured in the same way as the third electrode 53.

[0093] In one embodiment, the magnetic sensing unit 200 may include a Hall element. In some other embodiments, the magnetic sensing unit 200 may also include a magnetoresistive element or other components for sensing magnetic fields.

[0094] The Hall unit is based on the Hall effect. It generates a potential difference in response to the magnetic field applied to it, and uses the information of the potential difference to reflect the information of the applied magnetic field, so as to achieve the function of sensing the magnetic field.

[0095] The magnetic sensing unit 200 may be composed of one or more Hall units.

[0096] The magnetic sensing unit 200 includes one or more sensing units, and each sensing unit includes one or more Hall units.

[0097] In one embodiment, such as Figure 4 Combination Figure 1 As shown, the magnetic sensing unit 200 includes a first sensing unit 21.

[0098] The first sensing unit 21 includes a first Hall unit H1 and a second Hall unit H2.

[0099] The first terminal e11 of the first Hall element H1 is coupled to the power supply terminal Vd. The second terminal e12 of the first Hall element H1 is coupled to the ground terminal GND.

[0100] The first terminal e21 of the second Hall unit H2 is coupled to the power supply terminal Vd. The second terminal e22 of the second Hall unit H2 is coupled to the ground terminal GND. The third terminal e23 of the second Hall unit H2 is coupled to the third terminal e13 of the first Hall unit H1. The fourth terminal e24 of the second Hall unit H2 is coupled to the fourth terminal e14 of the first Hall unit H1.

[0101] The first sensing unit 21 includes the two Hall units mentioned above. The two Hall units are coupled to each other in parallel.

[0102] The magnetic sensing unit 200 may further include a second sensing unit 22. The second sensing unit 22 may be configured as the first sensing unit 21.

[0103] The first end e11 and the second end e12 of the first Hall unit H1 are set along the third direction X.

[0104] The third direction X is parallel to the first surface 101 of the substrate 10. The third direction X can be to the right.

[0105] The third end e13 and the fourth end e14 of the first Hall unit H1 are arranged along the second direction Y.

[0106] The second direction Y is parallel to the first surface 101 of the substrate 10. The second direction Y can be rearward.

[0107] Thus, the fourth terminal e14 of the first Hall unit H1 is a high potential terminal, located on the opposite side of the second direction Y of the first Hall unit H1; the third terminal e13 of the first Hall unit H1 is a low potential terminal, located on the second direction Y side of the first Hall unit H1.

[0108] The first end e21 of the second Hall unit H2 and the second end e22 of the second Hall unit H2 are arranged along the second direction Y.

[0109] The third terminal e23 and the fourth terminal e24 of the second Hall unit H2 are set along the third direction X.

[0110] Thus, the second terminal e22 of the second Hall unit H2 is a high potential terminal, located on the third X-side of the second Hall unit H2; the first terminal e21 of the second Hall unit H2 is a low potential terminal, located on the third X-side of the second Hall unit H2.

[0111] The high-potential terminals of the first Hall unit H1 and the second Hall unit H2 are coupled to form the first output V1, and the low-potential terminals of the first Hall unit H1 and the second Hall unit H2 are coupled to form the second output V2. The first output V1 and the second output V2 can be positively correlated with the strength of the magnetic field component of the signal magnetic field Bs at the location of the first sensing unit 21.

[0112] The first sensing unit 21 can also be formed by coupling four or more Hall units in the same or different ways.

[0113] In one embodiment, such as Figure 5 Combination Figure 1 As shown, the magnetic sensing unit 200 includes a first sensing unit 21 and a second sensing unit 22.

[0114] The direction of the magnetic field component of the signal magnetic field Bs at the first sensing unit 21 is opposite to the direction of the magnetic field component of the signal magnetic field Bs at the second sensing unit 22.

[0115] The positions of the first sensing unit 21 and the second sensing unit 22 can be adjusted so that the magnetic field components of the signal magnetic field Bs obtained by the two units are in opposite directions. For example, when the first conductor segment 311 used to generate the signal magnetic field Bs extends along the second direction Y, the first sensing unit 21 can be placed on the side opposite to the third direction X of the first conductor segment 311, and the second sensing unit 22 can be placed on the side of the third direction X of the first conductor segment 311.

[0116] The first sensing unit 21 includes a third Hall unit H3. The second sensing unit 22 includes a fourth Hall unit H4.

[0117] The two sensing units may each include a Hall unit, and the two Hall units are coupled to generate a third output Va and a fourth output Vb of the magnetic sensing unit 200.

[0118] The first terminal e31 of the third Hall unit H3 is coupled to the power supply terminal Vd, and the second terminal e32 of the third Hall unit H3 is coupled to the ground terminal GND.

[0119] The first terminal e41 of the fourth Hall unit H4 is coupled to the power supply terminal Vd, and the second terminal e42 of the fourth Hall unit H4 is coupled to the ground terminal GND. The third terminal e43 of the fourth Hall unit H4 is coupled to the fourth terminal e43 of the third Hall unit H3, and the fourth terminal e44 of the fourth Hall unit H4 is coupled to the third terminal e33 of the third Hall unit H3.

[0120] The signal magnetic field Bs can have a magnetic field component in the first direction Z at the first sensing unit 21. Corresponding to the magnetic field component in this direction, the fourth terminal e34 of the third Hall unit H3 is a high potential terminal, and the third terminal e33 of the third Hall unit H3 is a low potential terminal.

[0121] The signal magnetic field Bs at the second sensing unit 22 can have a magnetic field component in the opposite direction to the first direction Z. Corresponding to the magnetic field component in this direction, the third terminal e43 of the fourth Hall unit H4 is a high potential terminal, and the fourth terminal e44 of the fourth Hall unit H4 is a low potential terminal.

[0122] The first direction Z is perpendicular to the first surface 101 of the substrate 10. The first direction Z can be upward.

[0123] The high-potential terminals of the third Hall unit H3 and the fourth Hall unit H4 are coupled to form the third output Va, and the low-potential terminals of the third Hall unit H3 and the fourth Hall unit H4 are coupled to form the fourth output Vb. The third output Va and the fourth output Vb are positively correlated with the intensity difference of the magnetic field components of the signal magnetic field Bs at the locations of the first sensing unit 21 and the second sensing unit 22, that is, positively correlated with the measured current I.

[0124] Furthermore, based on the above connection relationship, the magnetic sensing unit 200 does not generate output for the uniform magnetic field of the environment, and has strong anti-interference ability.

[0125] The magnetic sensing unit 200 can use the difference between the third output Va and the fourth output Vb as the output Vo.

[0126] In one embodiment, such as Figure 6 Combination Figure 1 As shown, the current sensor 200 includes a first amplifier 71, a second amplifier 72, and a processing unit 70.

[0127] The magnetic sensing unit 200 includes a first sensing unit 21 and a second sensing unit 22. The direction of the magnetic field component of the signal magnetic field Bs at the first sensing unit 21 is opposite to the direction of the magnetic field component of the signal magnetic field Bs at the second sensing unit 22. The first sensing unit 21 includes a third Hall element H3. The second sensing unit 22 includes a fourth Hall element H4.

[0128] The first terminal e31 of the third Hall unit H3 is coupled to the power supply terminal Vd, and the second terminal e32 of the third Hall unit H3 is coupled to the ground terminal GND. The third terminal e33 of the third Hall unit H3 is coupled to the first input terminal of the first amplifier 71, and the fourth terminal e34 of the third Hall unit H3 is coupled to the second input terminal of the first amplifier 71.

[0129] The first amplifier 71 can be used to subtract the signal at its second input terminal from the signal at its first input terminal. When the direction of the magnetic field component of the signal magnetic field Bs at the third Hall unit H3 is the first direction Z, the fourth terminal e34 of the third Hall unit H3 is a high potential terminal, and the third terminal e33 of the third Hall unit H3 is a low potential terminal. The output of the first amplifier 71 is the difference between the high and low potentials of the third Hall unit H3. Compared to Figure 5 The provided embodiments, Figure 6 The embodiments have higher sensitivity.

[0130] The first terminal e41 of the fourth Hall unit H4 is coupled to the power supply terminal Vd, and the second terminal e42 of the fourth Hall unit H4 is coupled to the ground terminal GND. The third terminal e43 of the fourth Hall unit H4 is coupled to the first input terminal of the second amplifier 72, and the fourth terminal e44 of the fourth Hall unit H4 is coupled to the second input terminal of the second amplifier 72.

[0131] The second amplifier 72 can be used to subtract the signal from its first input terminal and the signal from its second input terminal. When the direction of the magnetic field component of the signal magnetic field Bs at the fourth Hall unit H4 is opposite to the first direction Z, the third terminal e43 of the fourth Hall unit H4 is at a high potential, and the fourth terminal e44 of the fourth Hall unit H4 is at a low potential. The output of the second amplifier 72 is the difference between the high and low potentials of the fourth Hall unit H4.

[0132] Compared to Figure 5 The provided embodiments, Figure 6 The embodiments have higher sensitivity.

[0133] The output terminals of the first amplifier 71 and the second amplifier 72 are coupled to the input terminals of the arithmetic unit 70. The arithmetic unit 70 is used to process and perform calculations on the output signals of the first amplifier 71 and the second amplifier 72.

[0134] The arithmetic unit 70 can be used to perform an addition operation on the two, producing an output that is positively correlated with the sum of the magnetic field component intensities at the first sensing unit 21 and the second sensing unit 22. This mode can be called the common-mode output mode.

[0135] The arithmetic unit 70 can be used to perform a subtraction operation on the two, producing an output that is positively correlated with the difference in magnetic field component strength at the first sensing unit 21 and the second sensing unit 22. This mode can be called the differential output mode.

[0136] The arithmetic unit 70 generates the third output Va and the fourth output Vb of the magnetic sensing unit 200 through calculation, which are positively correlated with the value of the current I to be measured.

[0137] The first sensing unit 21 and the second sensing unit 22 can also be formed by coupling two or more Hall units in the same or different ways.

[0138] The current sensor 1000 can also be configured as a combination of the above embodiments.

[0139] Figure 7 In the illustrated embodiment, multiple conductors can be disposed within the substrate. The impedance of the conductors is reduced by coupling them together, thereby supporting a larger sensing range. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0140] like Figure 7 As shown, a second conductor 32 is disposed within the substrate 100. The second conductor 32 is disposed close to the first conductor 31. The second conductor 32 is coupled to the first conductor 31 through a conductive unit 40.

[0141] When the current to be measured I is input into the first conductor 31, the first conductor 31 and the second conductor 32 transmit the current to be measured I.

[0142] Thus, the thickness of the conductors within the substrate 100 is effectively increased, and the structure formed by the combination of the first conductor 31 and the second conductor 32 has a lower impedance, enabling the current sensor 1000 to support the sensing of a larger current I to be measured.

[0143] The thickness of the second conductor 32 can be equal to or less than the thickness of the first conductor 31.

[0144] More conductors can be disposed within the substrate 100, and multiple conductors are coupled together through conductive units to further increase the equivalent thickness of the conductors and reduce the impedance.

[0145] For example, a third conductor 33 is disposed within the substrate 100. The third conductor 33 is disposed close to the second conductor 32 and is coupled to the second conductor 32 through a conductive element. When the current to be measured I is input to the first conductor 31, the first conductor 31, the second conductor 32, and the third conductor 33 transmit the current to be measured I.

[0146] In one embodiment, a second conductor 32 is disposed on the side 200 of the first conductor 31 near the magnetic sensing unit 200. The first conductor 31 and the second conductor 32 are sequentially disposed in one direction of the magnetic sensing unit 200, enabling the magnetic sensing unit 200 to provide magnetic field components in the same direction. Even if the magnetic field components are superimposed, the measured current I can be determined based on the superimposed magnetic field components. The placement of the second conductor 32 effectively increases the thickness of the first conductor 31 in that direction, facilitating the sensing of the measured current I over a wide range.

[0147] In one embodiment, a first conductor 31 is disposed on the first direction Z side of the magnetic sensing unit 200. The substrate 100 has M wiring layers disposed parallel to the first direction Z. At least one of the M wiring layers is used to form the first conductor 31. At least another of the M wiring layers is used to form a second conductor 32. When the first direction Z is defined as upward and the opposite direction of the first direction Z as downward, the second conductor 32 is disposed below the first conductor 31, and the thickness of the second conductor 32 can be less than the thickness of the first conductor 31. The first direction Z can be perpendicular to the first surface 101 of the substrate 10.

[0148] The first conductor 31 and the second conductor 32 can be disposed in the wiring layer away from the magnetic sensing unit 200 in the M wiring layers. Both can be configured to have a large thickness to improve the current carrying capacity and generate a larger signal magnetic field Bs.

[0149] For example, the fourth wiring layer 114 is used to form the first conductor 31, and the third wiring layer 113 is used to form the second conductor 32.

[0150] In embodiments that include a third conductor 33, a second wiring layer 112 may be used to form the third conductor 33.

[0151] The first conductor 31, the second conductor 32, and the third conductor 33 can be configured to have the same structure, shape, or connection relationship between each other. In other words, the description of the first conductor 31 can also be applied to the second conductor 32 and the third conductor 33.

[0152] By arranging multiple conductors along the first direction Z, the space of the substrate 100 in the first direction Z can be fully utilized, avoiding space waste caused by the multi-wire layer structure and improving the integration of the current sensor 1000.

[0153] The substrate 100 can also be configured as a combination of the above embodiments.

[0154] In one embodiment, conductive units 40 for coupling the first conductor 31 and the second conductor 32 are arranged in an array in a direction parallel to the first surface 101 of the substrate 10. This reduces the connection impedance.

[0155] Similarly, in a direction parallel to the first surface 101 of the substrate 10, conductive units 40 for coupling the second conductor 32 and the third conductor 33 are arranged in an array.

[0156] In a one-dimensional coordinate system, an array can be interpreted as a series of conductive units arranged at intervals along a specific direction. In a two-dimensional coordinate system, an array can be interpreted as a matrix arrangement of conductive units within a specific plane. Adjacent conductive units can have the same or different distance intervals.

[0157] Figure 8 In the illustrated embodiment, additional sensing units and magnetic field generating units can be disposed within the substrate to calibrate the sensing signal of the magnetic sensing unit 200. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0158] In one embodiment, such as Figure 8 As shown, a third sensing unit 23 and a magnetic field generating unit 231 are provided in the substrate 100.

[0159] The third sensing unit 23 is disposed on the first conductor 31 on the first direction Z side. The sensing direction of the third sensing unit 23 is parallel to the first direction Z. The first direction Z is perpendicular to the first surface 101 of the substrate 10. Thus, the magnetic field component generated by the first conductor 31 at the third sensing unit 23 is parallel to the first surface 101 (or, the magnetic field component along the first direction Z is canceled out at the third sensing unit 23), and the third sensing unit 23 does not output the magnetic field component of the signal magnetic field Bs.

[0160] A magnetic field generating unit 231 generates a reference magnetic field Br. A third sensing unit 23 senses the reference magnetic field Br to generate a third signal. This third signal is used to calibrate the sensing signal of the magnetic sensing unit 200. Since the third sensing unit 23 does not output the magnetic field component of the signal magnetic field Bs and is independent of the measured current I, the third signal of the third sensing unit 23 reflects the state of the reference magnetic field Br. When the reference magnetic field Br does not change, the error reflected by the third signal is equivalent to the error currently present in the magnetic sensing unit 200. Therefore, the sensing signal of the magnetic sensing unit 200 can be calibrated using the third signal.

[0161] In one embodiment, the current sensor 1000 is used to calibrate the sensing signal of the magnetic sensing unit 200 based on the difference between a third signal and a preset threshold. The preset threshold is determined based on a preset magnetic field strength of a reference magnetic field Br. The difference between the actual magnetic field strength of the reference magnetic field Br carried by the third signal and the ideal magnetic field strength of the reference magnetic field Br characterized by the preset threshold can reflect the current error of the magnetic sensing unit 200 since it is not affected by the magnitude of the current to be measured I. Based on this calibration, a more accurate sensing result of the current to be measured I can be obtained through direct means such as calculation.

[0162] The substrate 100 can also be configured as a combination of the above embodiments.

[0163] Figure 9 and Figure 10 In the illustrated embodiment, more diverse conductor shapes can be formed by including more conductor segments in the conductor, and several sensing units can be arranged accordingly to achieve multi-directional current sensing. In a preferred embodiment, the first conductor 31 can be configured as a U-shape. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0164] like Figure 9 As shown, in one embodiment, the first conductor 31 includes a fourth conductor segment 314 extending along a second direction Y. The magnetic sensing unit 200 includes a first sensing unit 21 disposed on the third direction X side of the fourth conductor segment 314. When the first conductor 31 receives a current I to be measured, the fourth conductor segment 314 generates at least a portion of a signal magnetic field Bs and acts on the first sensing unit 21. When the first conductor 31 also includes a first conductor segment 311 or other conductor segments (e.g., a second conductor segment 312), the first sensing unit 21 can receive signal magnetic fields Bs generated from multiple conductor segments to more accurately sense the current I to be measured.

[0165] When the first conductor 31 includes the first conductor segment 311, the second conductor segment 312 and the fourth conductor segment 314, the three form a U-shaped arrangement. The first sensing unit 21 located in the middle of the U-shape can obtain a signal magnetic field Bs with a stronger magnetic field strength.

[0166] In one embodiment, the magnetic sensing unit 200 includes a fourth sensing unit 24 disposed on the side opposite to the third direction X of the fourth conductor segment 314. The fourth sensing unit 24 can sense the signal magnetic field Bs of the fourth conductor segment 314 at another location.

[0167] The magnetic sensing unit 200 may further include a second sensing unit 22 disposed on the third X-direction side of the first conductor segment 311. In this case, the fourth sensing unit 24 and the second sensing unit 22 are disposed on both sides of the first sensing unit 21 and can be compared with each other to sense the current to be measured I.

[0168] The first conductor 31 includes a fifth conductor segment 315 extending in a third direction X. A first end of the fifth conductor segment 315 is used to receive the current to be measured I, and a second end of the fifth conductor segment 315 is coupled to the first end of the fourth conductor segment 314. The current to be measured I enters the first conductor 31 through the first end of the fifth conductor segment 315, and the first conductor 31 generates a signal magnetic field Bs accordingly.

[0169] The second end of the fourth conductor segment 314 is coupled to the first end of the second conductor segment 312. The first end of the second conductor segment 312 receives current from the fifth conductor segment 315 and the fourth conductor segment 314 to receive the current to be measured, I.

[0170] A portion of the first end of the fifth conductor segment 315 may be exposed relative to the substrate 100 to form an electrode for receiving the current to be measured I.

[0171] A portion of the second end of the third conductor segment 313 may be exposed relative to the substrate 100 to form an electrode for outputting the current to be measured I.

[0172] like Figure 10 As shown, in one embodiment, the first conductor 31 includes a sixth conductor segment 316 extending along a second direction Y. The magnetic sensing unit 200 includes a second sensing unit 22 disposed on the side opposite to the third direction X of the sixth conductor segment 316. When the first conductor 31 receives a current I to be measured, the sixth conductor segment 316 generates at least a portion of a signal magnetic field Bs and acts on the second sensing unit 22. When the first conductor 31 also includes a first conductor segment 311 or other conductor segments, the second sensing unit 22 can receive signal magnetic fields Bs generated from multiple conductor segments to more accurately sense the current I to be measured.

[0173] When the first conductor 31 includes the first conductor segment 311, the third conductor segment 313 and the sixth conductor segment 316, the three form a U-shaped arrangement, and the second sensing unit 21 located in the middle of the U-shape can obtain a signal magnetic field Bs with a stronger magnetic field strength.

[0174] In one embodiment, the magnetic sensing unit 200 includes a fifth sensing unit 25 disposed on the third X-direction side of the sixth conductor segment 316. The fifth sensing unit 25 can sense the signal magnetic field Bs of the sixth conductor segment 316 at another location.

[0175] The magnetic sensing unit 200 may further include a first sensing unit 21 disposed on the side opposite to the third direction X of the first conductor segment 311. In this case, the fifth sensing unit 25 and the first sensing unit 21 are disposed on both sides of the second sensing unit 22 and can be compared with each other to sense the current to be measured I.

[0176] The first conductor 31 includes a seventh conductor segment 317 extending in a third direction X. A first end of the seventh conductor segment 317 is coupled to a second end of a sixth conductor segment 316, and the second end of the seventh conductor segment 317 is used to output the current to be measured I. The current to be measured I flows out of the first conductor 31 through the second end of the seventh conductor segment 317, and the first conductor 31 generates a signal magnetic field Bs accordingly.

[0177] A portion of the first end of the second conductor segment 312 may be exposed relative to the substrate 100 to form an electrode for receiving the current to be measured I.

[0178] A portion of the second end of the seventh conductor segment 317 may be exposed relative to the substrate 100 to form an electrode for outputting the current to be measured I.

[0179] exist Figure 10 In the preferred embodiment shown, the current to be measured I can enter the first conductor 31 from one end of the second conductor segment 312, and the current direction is parallel to the third direction X in the second conductor segment 312, parallel to the second direction Y in the first conductor segment 311, parallel to the third direction X in the third conductor segment 313, parallel to the opposite direction of the second direction Y in the sixth conductor segment 316, and parallel to the third direction X in the seventh conductor segment 317.

[0180] The first sensing unit 21 receives the component of the signal magnetic field Bs parallel to the first direction Z, the second sensing unit 22 receives the component of the signal magnetic field Bs parallel to the opposite direction of the first direction Z, and the fifth sensing unit 25 receives the component of the signal magnetic field Bs parallel to the first direction Z.

[0181] The substrate 100 can also be configured as a combination of the above embodiments.

[0182] In one embodiment, such as Figure 11 Combination Figure 9 or Figure 10 As shown, the magnetic sensing unit 200 includes a first sensing unit 21, a second sensing unit 22, and a fifth sensing unit 25.

[0183] The direction of the magnetic field component of the signal magnetic field Bs at the first sensing unit 21 is opposite to the direction of the magnetic field component of the signal magnetic field Bs at the second sensing unit 22. In the aforementioned embodiment, the sensing unit having a magnetic field component of the signal magnetic field Bs opposite to that of the first sensing unit 21 can also be the second sensing unit 22.

[0184] The direction of the magnetic field component of the signal magnetic field Bs at the first sensing unit 21 is the same as the direction of the magnetic field component of the signal magnetic field Bs at the fifth sensing unit 25. In the aforementioned embodiment, a sensing unit having the same magnetic field component of the signal magnetic field Bs as the first sensing unit 21 can also be used as the fifth sensing unit 25.

[0185] The first sensing unit 21 includes a third Hall unit H3; the second sensing unit 22 includes a fourth Hall unit H4; and the fifth sensing unit 25 includes a fifth Hall unit H5.

[0186] The first terminal e31 of the third Hall unit H3 is coupled to the power supply terminal Vd, and the second terminal e32 of the third Hall unit H3 is coupled to the ground terminal GND.

[0187] The first terminal e41 of the fourth Hall unit H4 is coupled to the power supply terminal Vd, and the second terminal e42 of the fourth Hall unit H4 is coupled to the ground terminal GND. The third terminal e43 of the fourth Hall unit H4 is coupled to the fourth terminal e34 of the third Hall unit H3, and the fourth terminal e44 of the fourth Hall unit H4 is coupled to the third terminal e33 of the third Hall unit H3.

[0188] The first terminal e51 of the fifth Hall unit H5 is coupled to the power supply terminal Vd, and the second terminal e52 of the fifth Hall unit H5 is coupled to the ground terminal GND. The third terminal e53 of the fifth Hall unit H5 is coupled to the third terminal e33 of the third Hall unit H3, and the fourth terminal e54 of the fifth Hall unit H5 is coupled to the fourth terminal e34 of the third Hall unit H3.

[0189] Because the magnetic field components at the first sensing unit 21 and the second sensing unit 22 are in opposite directions, the corresponding terminals of the third Hall unit H3 and the fourth Hall unit H4 exhibit different potentials. Because the magnetic field components at the first sensing unit 21 and the fifth sensing unit 25 are in the same direction, the corresponding terminals of the third Hall unit H3 and the fifth Hall unit H5 exhibit the same potential.

[0190] When the direction of the signal magnetic field Bs at the third Hall unit H3 and the fifth Hall unit H5 is the first direction Z, the third terminal e33 of the third Hall unit H3 is the high potential terminal, the fourth terminal e34 of the third Hall unit H3 is the low potential terminal, the third terminal e53 of the fifth Hall unit H5 is the high potential terminal, and the fourth terminal e54 of the fifth Hall unit H5 is the low potential terminal.

[0191] When the direction of the signal magnetic field Bs at the fourth Hall unit H4 is opposite to the first direction Z, the third terminal e43 of the fourth Hall unit H4 is at a low potential, and the fourth terminal e44 of the fourth Hall unit H4 is at a high potential.

[0192] The high-potential terminals of the third Hall unit H3, the fourth Hall unit H4, and the fifth Hall unit H5 are coupled to form the third output Va, and the low-potential terminals of the third Hall unit H3, the fourth Hall unit H4, and the fifth Hall unit H5 are coupled to form the fourth output Vb. The third output Va and the fourth output Vb are positively correlated with the measured current I and do not generate output in response to the ambient magnetic field.

[0193] The third output Va can also be connected to an amplifier to produce the final output, and the fourth output Vb can also be connected to an amplifier to produce the final output. (See reference...) Figure 6 Configured using the embodiments described above.

[0194] Figure 12 In the illustrated embodiment, multiple sensing units and / or conductors can be disposed within the substrate 100, thereby improving the integration and sensing accuracy of the current sensor 1000. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0195] like Figure 12 Combination Figure 2 As shown, in one embodiment, the first conductor 31 includes a first conductor segment 311, and the magnetic sensing unit 200 includes a first sensing unit 21 disposed on one side of the first conductor segment 311 in a direction parallel to the first surface 101 of the substrate 10.

[0196] In one embodiment, the magnetic sensing unit 200 includes a second sensing unit 22 disposed on the other side of the first conductor segment 311 in a direction parallel to the first surface 101 of the substrate 10.

[0197] For example, the third direction X is parallel to the first surface 101 of the substrate 10. The first sensing unit 21 may be disposed on the side opposite to the third direction X of the first conductor segment 311, and the second sensing unit 22 may be disposed on the side of the third direction X of the first conductor segment 311. The first conductor segment 311 may extend along the second direction Y.

[0198] Similarly, the first conductor segment 311 can also extend along the third direction X, and the first sensing unit 21 and the second sensing unit 22 can be disposed on both sides of the first conductor segment 311 in the second direction Y.

[0199] In one embodiment, a second conductor 32 is disposed within the substrate 100. The second conductor 32 is at least partially located on the side of the first conductor 31 in the first direction Z or the opposite direction. Thus, by arranging the conductor in the first direction Z of the substrate 100, the space within the substrate 100 can be fully utilized, and the strength of the signal magnetic field Bs can be increased.

[0200] The first direction Z is perpendicular to the first surface 101 of the substrate 10. The first direction Z can be upward.

[0201] In one embodiment, the first end 31a of the first conductor 31 is used to receive the current to be measured. The second end 31b of the first conductor 31 is coupled to the first end 32a of the second conductor 32. Thus, the first conductor 31 and the second conductor 32 are formed as a multi-turn coil, which can increase the magnetic field strength of the generated signal magnetic field Bs and improve the output sensitivity of the current sensor 1000.

[0202] When the current to be measured, I, is input into the first conductor 31, the current direction at corresponding locations in the first conductor 31 and the second conductor 32 is the same. For example, when the current to be measured, I, is input into the first conductor segment 311 through the first end 31a of the first conductor 31, the current direction of the current to be measured, I, in the first conductor segment 311 is the second direction Y, and the current direction of the current to be measured, I, at the corresponding location in the second conductor 32 corresponding to the first conductor segment 311, is also the second direction Y. In this way, the signal magnetic fields generated by the multiple conductors arranged in a multi-turn coil configuration can mutually promote each other.

[0203] The second direction Y is parallel to the first surface 101 of the substrate 10. The second direction Y can be rearward.

[0204] In one embodiment, the second end 32b of the second conductor 32 is used to output the current to be measured, I. Thus, the two conductors can be configured as a two-turn coil.

[0205] In one embodiment, a third conductor 33 is disposed within the substrate 100. The third conductor 33 is at least partially located on the side of the second conductor 32 in the first direction Z or the opposite direction. In this way, the space within the substrate 100 is further utilized.

[0206] In one embodiment, the second end 32b of the second conductor 32 is coupled to the first end 33a of the third conductor 33. In an embodiment where a first conductor 31 is also provided within the substrate 100, the three conductors can form a three-turn coil.

[0207] When the current to be measured I is input into the second conductor 32, the current directions at corresponding locations in the second conductor 32 and the third conductor 33 are consistent. For example, when the current to be measured I is input into a conductor segment extending along the third direction X in the second conductor 32 through the first end 32a, the current direction of the current to be measured I in that conductor segment is the third direction X, and the current direction of the current to be measured I at the corresponding location in the third conductor 33 is also the third direction X.

[0208] In one embodiment, the second terminal 33b of the third conductor 33 is used to output the current to be measured I.

[0209] exist Figure 12 In the preferred embodiment provided, when the current to be measured I is input at the first end 31a of the first conductor 31 and the current to be measured I is output at the second end 33b of the third conductor 33, the first conductor 31, the second conductor 32 and the third conductor 33 can be regarded as being arranged in a clockwise direction.

[0210] The substrate 100 can also be configured as a combination of the above embodiments.

[0211] In one embodiment, combined with Figure 2 or Figure 7 As shown, the second conductor 32 is located on the side of the first conductor 31 closer to the magnetic sensing unit 200. When the first direction Z is defined as upward, the second conductor 32 can be located above the magnetic sensing unit 200, and the first conductor 31 can be located above the second conductor 32.

[0212] In one embodiment, the third conductor 33 is located on the side of the second conductor 32 near the magnetic sensing unit 200. When the first direction Z is defined as upward, the third conductor 33 can be located above the magnetic sensing unit 200, and the second conductor 32 can be located above the third conductor 33.

[0213] When the substrate 100 includes three conductors, the magnetic sensing unit 200, the third conductor 33, the second conductor 32 and the first conductor 31 can be arranged sequentially from bottom to top.

[0214] In one embodiment, the substrate 100 has M wiring layers disposed parallel to a first direction Z. At least M1 of the M wiring layers are used to form the first conductor 31. The substrate 100 has multiple wiring layers disposed therein to implement various functions, wherein some of the wiring layers can be used to form the first conductor 31. M1 is greater than or equal to 1; a single conductor can be formed by one or more wiring layers.

[0215] The first direction Z is perpendicular to the first surface 101 of the substrate 10.

[0216] In one embodiment, at least M2 of the M wiring layers are used to form the second conductor 32. At least a portion of the plurality of wiring layers disposed within the substrate 100 are used to form the second conductor 32. M2 is greater than or equal to 1; a single conductor may be formed by one or more wiring layers.

[0217] In one embodiment, at least M3 of the M wiring layers are used to form the third conductor 33. At least a portion of the plurality of wiring layers disposed within the substrate 100 are used to form the third conductor 33. M3 is greater than or equal to 1; a single conductor may be formed by one or more wiring layers.

[0218] In one embodiment, an insulating layer (e.g., a fourth insulating layer 124) is included between the first conductor 31 and the second conductor 32. Conductive units 40 are disposed in this insulating layer. The conductive units 40 disposed between the first conductor 31 and the second conductor 32 are at least partially used for coupling the second end 31b of the first conductor 31 and the first end 32a of the second conductor 32 (e.g., ...). Figure 12 In the diagram, the dashed rectangles at the second end 31b of the first conductor 31 and the first end 32a of the second conductor 32 are shown. The first conductor 31 is located in the first direction Z of the conductive unit 40, and the second conductor 32 is located in the opposite direction of the first direction Z of the conductive unit 40.

[0219] In one embodiment, a conductive unit 40 is disposed in an insulating layer (e.g., a fourth insulating layer 124) located between the first conductor 31 and the second conductor 32. At least another portion of the conductive unit 40 is used to couple other portions of the first conductor 31 and the second conductor 32, excluding the ends (e.g., ...). Figure 7 (As shown in the diagram, conductive units 40 are arranged between the first conductor 31 and the second conductor 32 and spaced apart along the second direction Y or the third direction X). In this way, the first conductor 31 and the second conductor 32 can be considered as a single unit, reducing impedance.

[0220] The second direction Y and the third direction X are parallel to the first surface 101 of the substrate 10. The second direction Y can be rearward, and the third direction X can be rightward.

[0221] In one embodiment, an insulating layer (e.g., a third insulating layer 123) is included between the second conductor 32 and the third conductor 33. Conductive units 40 are disposed in this insulating layer. The conductive units 40 disposed between the second conductor 32 and the third conductor 33 are at least partially used for coupling the second end 32b of the second conductor 32 and the first end 33a of the third conductor 33 (e.g., ...). Figure 12(The dashed rectangles at the second end 32b of the second conductor 32 and the first end 33a of the third conductor 33 are shown in the diagram). The second conductor 32 is located in the first direction Z of the conductive unit 40, and the third conductor 33 is located in the opposite direction of the first direction Z of the conductive unit 40.

[0222] In one embodiment, a conductive unit 40 is provided in an insulating layer (e.g., third insulating layer 123) located between the second conductor 32 and the third conductor 33. At least another portion of the conductive unit 40 is used to couple other portions of the second conductor 32 and the third conductor 33, excluding the ends (e.g., ...). Figure 7 In the diagram, conductive units 40 are arranged between the second conductor 32 and the third conductor 33 and spaced apart along the second direction Y or the third direction X. This allows the second conductor 32 and the third conductor 33 to be considered as a single unit, reducing impedance.

[0223] The substrate 100 can also be configured as a combination of the above embodiments.

[0224] In one embodiment, the first conductor 31 includes at least one of a first conductor segment 311 extending along a second direction Y, an eighth conductor segment 318 extending along a third direction X, a ninth conductor segment 319 extending in the opposite direction of the second direction Y, and a tenth conductor segment 3110 extending in the opposite direction of the third direction X.

[0225] The second direction Y and the third direction X are parallel to the first surface 101 of the substrate 10. The second direction Y can be rearward, and the third direction X can be rightward.

[0226] In one embodiment, the first conductor 31 is used to form at least a single-turn coil. The single-turn coil formed by the first conductor 31 can be arranged in a clockwise direction. Between the first end 31a and the second end 31b of the first conductor 31, a first conductor segment 311, an eighth conductor segment 318, a ninth conductor segment 319, and a tenth conductor segment 3110 can be sequentially included.

[0227] In one embodiment, the magnetic sensing unit 200 may include a first sensing unit 21. The first sensing unit 21 is disposed on the side opposite to the third direction X of the first conductor segment 311.

[0228] The magnetic sensing unit 200 may include a second sensing unit 22. The second sensing unit 22 is disposed on the third X-side of the first conductor segment 311.

[0229] In one embodiment, the second conductor 32 includes at least one of an eleventh conductor segment 3211 extending in the opposite direction of a third direction X, a twelfth conductor segment 3212 extending in the second direction Y, a thirteenth conductor segment 3213 extending in the third direction X, a fourteenth conductor segment 3214 extending in the opposite direction of the second direction Y, and a fifteenth conductor segment 3215 extending in the opposite direction of a third direction X.

[0230] In one embodiment, the second conductor 32 is used to form at least a single-turn coil. The single-turn coil formed by the second conductor 32 can be arranged in a clockwise direction. The first end 32a and the second end 32b of the second conductor 32 may sequentially include an eleventh conductor segment 3211, a twelfth conductor segment 3212, a thirteenth conductor segment 3213, a fourteenth conductor segment 3214, and a fifteenth conductor segment 3215.

[0231] In one embodiment, the magnetic sensing unit 200 may include a first sensing unit 21. The first sensing unit 21 is disposed on the side opposite to the third direction X of the twelfth conductor segment 3212.

[0232] The magnetic sensing unit 200 may include a second sensing unit 22. The second sensing unit 22 is disposed on the third X-side of the twelfth conductor segment 3212.

[0233] In one embodiment, the third conductor 33 includes at least one of a sixteenth conductor segment 3316 extending in the opposite direction of the third direction X, a seventeenth conductor segment 3317 extending in the second direction Y, an eighteenth conductor segment 3318 extending in the third direction X, and a nineteenth conductor segment 3319 extending in the opposite direction of the second direction Y.

[0234] In one embodiment, the third conductor is used to form at least a single-turn coil. The single-turn coil formed by the third conductor 33 can be arranged in a clockwise direction. The first end 33a and the second end 33b of the third conductor 33 may include a sixteenth conductor segment 3316, a seventeenth conductor segment 3317, an eighteenth conductor segment 3318, and a nineteenth conductor segment 3319 in sequence.

[0235] In one embodiment, the magnetic sensing unit 200 may include a first sensing unit 21. The first sensing unit 21 is disposed on the side opposite to the third direction X of the seventeenth conductor segment 3317.

[0236] The magnetic sensing unit 200 may include a second sensing unit 22. The second sensing unit 22 is disposed on the third X-side of the seventeenth conductor segment 3317.

[0237] In one embodiment, the second sensing unit 22 is disposed at the hollow portion formed by any of the single-turn coils.

[0238] The first conductor 31 forms a hollow portion, and the second sensing unit 22 can be disposed within the hollow portion. The second sensing unit 22 can be specifically located on the third direction X side of the first conductor segment 311, the opposite direction Y side of the second direction Y of the eighth conductor segment 318, the opposite direction X side of the third direction X of the ninth conductor segment 319, and the second direction Y side of the tenth conductor segment 3110.

[0239] The second conductor 32 forms a hollow portion, and the second sensing unit 22 can be disposed within this hollow portion. The second sensing unit 22 can be specifically located on the second direction Y side of the eleventh conductor segment 3211, the third direction X side of the twelfth conductor segment 3212, the opposite direction of the second direction Y side of the thirteenth conductor segment 3213, the opposite direction of the third direction X side of the fourteenth conductor segment 3214, and the second direction Y side of the fifteenth conductor segment 3215.

[0240] The third conductor 33 forms a hollow portion, and the second sensing unit 22 can be disposed within the hollow portion. The second sensing unit 22 can be specifically located on the second direction Y side of the sixteenth conductor segment 3316, the third direction X side of the seventeenth conductor segment 3317, the opposite direction of the second direction Y side of the eighteenth conductor segment 3318, and the opposite direction of the third direction X side of the nineteenth conductor segment 3319.

[0241] Based on this, the second sensing unit 22 can obtain a signal magnetic field Bs with a higher intensity.

[0242] The substrate 100 can also be configured as a combination of the above embodiments.

[0243] Figure 13 In the illustrated embodiment, coupling can be achieved between the electrode and the lead using conductive bumps. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0244] In one embodiment, such as Figure 13 As shown, the current sensor 1000 includes leads.

[0245] The leads may include at least one of the following: a first lead 61, a second lead 62, a third lead 63, a fourth lead 64, a fifth lead 65, a sixth lead 66, a seventh lead 67, and an eighth lead 68.

[0246] The substrate 100 may be provided with at least one of the following: a first electrode 51, a second electrode 52, a third electrode 53, a fourth electrode 54, a fifth electrode 55, a sixth electrode 56, a seventh electrode 57, and an eighth electrode 58.

[0247] The leads can be connected to the corresponding electrodes via conductive bumps. In particular, the first lead segment of different leads can be connected to the corresponding electrodes via conductive bumps.

[0248] The conductive bump can be disposed at the electrode, and the first lead segment of the corresponding lead can extend towards the electrode and couple with the conductive bump of the electrode. The conductive bump can be formed in a columnar shape. The height direction of the columnar conductive bump can be a first direction Z.

[0249] In one embodiment, the current sensor 1000 includes a package 600. The package 600 encapsulates the substrate 100 and a first lead segment of the aforementioned leads. A second lead segment of the aforementioned leads may be exposed relative to the package 600 for coupling the current sensor 1000 to other devices.

[0250] Figure 14 In the illustrated embodiment, coupling can be achieved between the electrode and the lead using solder pads and / or solder balls. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0251] In one embodiment, such as Figure 14 As shown, with Figure 13 Similarly, in other implementations, the substrate 100 may be provided with at least one of a first electrode 51, a second electrode 52, a third electrode 53, a fourth electrode 54, a fifth electrode 55, a sixth electrode 56, a seventh electrode 57, and an eighth electrode 58. These electrodes can be used to couple leads.

[0252] The first lead segment of the corresponding lead can be coupled to the corresponding electrode via a solder pad and a solder ball. Specifically, a solder pad can be formed at the electrode, and a corresponding solder ball can be formed at the solder pad. One side of the solder ball is coupled to the solder pad and the electrode, and the other side is coupled to the lead.

[0253] Thus, a first solder ball 81, a second solder ball 82, a third solder ball 83, a fourth solder ball 84, a fifth solder ball 85, a sixth solder ball 86, a seventh solder ball 87, and an eighth solder ball 88 can be formed at the aforementioned electrodes.

[0254] The solder ball can also be replaced with a spherical coupling structure made of other conductive materials.

[0255] In summary, the current sensor provided by this invention, by placing a first conductor within a substrate, particularly through a hierarchical structure within the substrate, significantly reduces the distance between the conductor for receiving the measured current and the magnetic sensing unit. This enhances the strength of the signal magnetic field corresponding to the measured current at the magnetic sensing unit, greatly improving the sensitivity of the current sensor. Furthermore, since the conductor is placed within the substrate, it can receive current with only partial exposure, effectively reducing the overall size of the device or system. This allows for adaptation to various packaging requirements without the need for additional structures, thus reducing packaging costs.

[0256] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0257] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A current sensor, characterized in that, Includes a substrate, wherein the substrate is provided with: Substrate, A magnetic sensing unit is disposed on one side of the first surface of the substrate, and A first conductor is disposed on the side of the magnetic sensing unit away from the substrate, with a portion of the first conductor exposed relative to the substrate for receiving the current to be measured. The magnetic sensing unit is used to sense the signal magnetic field corresponding to the current to be measured, so as to generate a sensing signal; The first surface is either the upper or lower surface of the substrate.

2. The current sensor according to claim 1, characterized in that, The substrate contains: The second conductor is disposed close to the first conductor and is coupled to the first conductor through a conductive unit; When the current to be measured is input into the first conductor, the first conductor and the second conductor transmit the current to be measured.

3. The current sensor according to claim 2, characterized in that, The substrate is configured according to at least one of the following: The second conductor is disposed on the side of the first conductor near the magnetic sensing unit; The first conductor is disposed on one side of the magnetic sensing unit in a first direction. The substrate has M wiring layers disposed parallel to the first direction. At least one of the M wiring layers is used to form the first conductor, and at least another of the M wiring layers is used to form the second conductor. The first direction is perpendicular to the first surface of the substrate.

4. The current sensor according to claim 2, characterized in that, In a direction parallel to the first surface of the substrate, conductive units for coupling the first conductor and the second conductor are arranged in an array.

5. The current sensor according to claim 1, characterized in that, The first conductor is disposed on one side of the magnetic sensing unit in a first direction. The substrate has M wiring layers and N insulating layers disposed parallel to the first direction. The M wiring layers and the N insulating layers are alternately disposed in the first direction, wherein the first direction is perpendicular to the first surface of the substrate. The substrate is configured according to at least one of the following: The wiring layer furthest from the magnetic sensing unit in the M wiring layers is used to form the first conductor; The thickest wiring layer among the M wiring layers is used to form the first conductor; The insulating layer is provided with conductive units for coupling to conductive structures adjacent to the insulating layer; The N insulating layers include a fifth insulating layer located on the side of the first conductor away from the magnetic sensing unit. The fifth insulating layer is provided with a first opening for exposing a portion of the first conductor corresponding to the first opening relative to the substrate. The N insulating layers include a fifth insulating layer that is far from the magnetic sensing unit, and the M wiring layers include a fourth wiring layer located on the side of the fifth insulating layer that is close to the magnetic sensing unit. The fifth insulating layer is provided with a second opening to expose a portion of the fourth wiring layer corresponding to the second opening relative to the substrate, so as to form the electrode of the current sensor. The M wiring layers include a first wiring layer close to the magnetic sensing unit. A first device is also disposed in the substrate. The magnetic sensing unit and the first device are coupled through the first wiring layer. The M wiring layers include a first wiring layer close to the magnetic sensing unit, and the N insulating layers include a first insulating layer located on the side of the first wiring layer close to the magnetic sensing unit. A first device is also disposed in the substrate. A conductive unit is disposed in the first insulating layer for coupling the magnetic sensing unit to the first wiring layer or for coupling the first wiring layer to the first device.

6. The current sensor according to claim 1, characterized in that, A first direction is perpendicular to a first surface of the substrate, and a second and a third direction are parallel to the first surface of the substrate. The substrate is configured according to at least one of the following: The first conductor includes a first conductor segment extending along a second direction, and the magnetic sensing unit includes a first sensing unit disposed on the side opposite to the third direction of the first conductor segment. The magnetic sensing unit includes a second sensing unit disposed on a third-direction side of the first conductor segment; The first conductor includes a second conductor segment extending in a third direction, a first end of the second conductor segment for receiving the current to be measured, and a second end of the second conductor segment coupled to the first end of the first conductor segment; The first conductor includes a third conductor segment extending in a third direction, a first end of the third conductor segment coupled to a second end of the first conductor segment, and the second end of the third conductor segment being used to output the current to be measured. The first end of the first conductor segment is the end of the first conductor segment located in the opposite direction to the second direction, and the second end of the first conductor segment is the end of the first conductor segment located in the second direction.

7. The current sensor according to claim 6, characterized in that, The substrate is configured according to at least one of the following: The substrate is provided with a third sensing unit and a magnetic field generating unit. The third sensing unit is located on one side of the first conductor in the first direction. The sensing direction of the third sensing unit is parallel to the first direction. The magnetic field generating unit is used to generate a reference magnetic field. The third sensing unit is used to sense the reference magnetic field to generate a third signal. The third signal is used to calibrate the sensing signal of the magnetic sensing unit. The current sensor is used to calibrate the sensing signal of the magnetic sensing unit based on the difference between the third signal and a preset threshold, wherein the preset threshold is determined based on the preset magnetic field strength of the reference magnetic field.

8. The current sensor according to claim 6, characterized in that, The substrate is configured according to at least one of the following: The first conductor includes a fourth conductor segment extending along a second direction, and the magnetic sensing unit includes a first sensing unit disposed on a third directional side of the fourth conductor segment. The magnetic sensing unit includes a fourth sensing unit disposed on the side opposite to the third direction of the fourth conductor segment; The first conductor includes a fifth conductor segment extending in a third direction, a first end of the fifth conductor segment for receiving the current to be measured, and a second end of the fifth conductor segment coupled to the first end of the fourth conductor segment. The first conductor includes a sixth conductor segment extending along a second direction, and the magnetic sensing unit includes a second sensing unit disposed on the side opposite to the third direction of the sixth conductor segment. The magnetic sensing unit includes a fifth sensing unit disposed on the third directional side of the sixth conductor segment; The first conductor includes a seventh conductor segment extending in a third direction, a first end of the seventh conductor segment coupled to a second end of a sixth conductor segment, and the second end of the seventh conductor segment used to output the current to be measured.

9. The current sensor according to claim 1, characterized in that, A first direction is perpendicular to a first surface of the substrate, and a second and a third direction are parallel to the first surface of the substrate. The substrate is configured according to at least one of the following: The first conductor includes a first conductor segment, and the magnetic sensing unit includes a first sensing unit disposed on one side of the first conductor segment in a direction parallel to the first surface of the substrate. The magnetic sensing unit includes a second sensing unit disposed on the other side of the first conductor segment in a direction parallel to the first surface of the substrate; A second conductor is disposed within the substrate, and the second conductor is at least partially located on the first conductor in a first direction or the opposite direction. The first end of the first conductor is used to receive the current to be measured, and the second end of the first conductor is coupled to the first end of the second conductor. The second end of the second conductor is used to output the current to be measured. A third conductor is disposed within the substrate, and the third conductor is at least partially located on the first or opposite side of the second conductor. The second end of the second conductor is coupled to the first end of the third conductor; The second end of the third conductor is used to output the current to be measured.

10. The current sensor according to claim 9, characterized in that, The substrate is configured according to at least one of the following: The second conductor is located on the side of the first conductor closer to the magnetic sensing unit; The third conductor is located on the side of the second conductor closer to the magnetic sensing unit; The substrate has M wiring layers disposed parallel to a first direction, and at least M1 of the M wiring layers are used to form the first conductor. At least M2 of the M wiring layers are used to form the second conductor; At least M3 of the M wiring layers are used to form the third conductor; An insulating layer is included between the first conductor and the second conductor, and a conductive unit is disposed in the insulating layer for coupling the second end of the first conductor and the first end of the second conductor; A conductive unit is provided in the insulating layer between the first conductor and the second conductor for coupling other parts of the first conductor and the second conductor except for the ends; An insulating layer is included between the second conductor and the third conductor, and a conductive unit is disposed in the insulating layer for coupling the second end of the second conductor and the first end of the third conductor; A conductive unit is provided in the insulating layer between the second conductor and the third conductor for coupling other parts of the second conductor and the third conductor except for the ends.

11. The current sensor according to claim 9, characterized in that, The substrate is configured according to at least one of the following: The first conductor includes a first conductor segment extending along a second direction, an eighth conductor segment extending along a third direction, a ninth conductor segment extending in the opposite direction of the second direction, and a tenth conductor segment extending in the opposite direction of the third direction. The first conductor is used to form at least a single-turn coil; The first sensing unit is located on the side opposite to the third direction of the first conductor segment; The second conductor includes an eleventh conductor segment extending in the opposite direction to a third direction, a twelfth conductor segment extending in the second direction, a thirteenth conductor segment extending in the third direction, a fourteenth conductor segment extending in the opposite direction to the second direction, and a fifteenth conductor segment extending in the opposite direction to the third direction. The second conductor is used to form at least a single-turn coil; The first sensing unit is located on the side opposite to the third direction of the twelfth conductor segment; The third conductor includes a sixteenth conductor segment extending in the opposite direction to the third direction, a seventeenth conductor segment extending in the second direction, an eighteenth conductor segment extending in the third direction, and a nineteenth conductor segment extending in the opposite direction to the second direction. The third conductor is used to form at least a single-turn coil; The first sensing unit is located on the side opposite to the third direction of the seventeenth conductor segment; The second sensing unit is located in the hollow portion formed by the single-turn coil.

12. The current sensor according to claim 1, characterized in that, The current sensor is configured according to at least one of the following: The substrate is provided with electrodes, which are coupled to a first conductor or a magnetic sensing unit. The current sensor includes leads, the leads including a first lead segment for coupling electrodes and a second lead segment extending away from the substrate; The current sensor includes a package for encapsulating a substrate and a first lead segment.

13. The current sensor according to claim 12, characterized in that, The current sensor is configured according to at least one of the following: At least two leads are provided on both sides of the substrate, and the second lead segment of each of the two leads respectively includes a lead segment extending in a direction perpendicular to the first surface; The first lead segment is coupled to the electrode via wire bonding; The first lead segment is coupled to the electrode via a conductive bump; The first lead segment is coupled to the electrode via solder pads and solder balls.

14. The current sensor according to claim 1, characterized in that, The magnetic sensing unit includes a Hall element.

15. The current sensor according to claim 14, characterized in that, The first direction is perpendicular to the first surface of the substrate, and the second and third directions are parallel to the first surface of the substrate. The current sensor is configured according to at least one of the following: The magnetic sensing unit includes a first sensing unit, which in turn includes a first Hall element and a second Hall element. A first terminal of the first Hall element is coupled to a power supply terminal, and a second terminal of the first Hall element is coupled to a ground terminal. A first terminal of the second Hall element is also coupled to a power supply terminal, and a second terminal of the second Hall element is coupled to a ground terminal. A third terminal of the second Hall element is coupled to a third terminal of the first Hall element, and a fourth terminal of the second Hall element is coupled to a fourth terminal of the first Hall element. The first and second ends of the first Hall element are arranged along a third direction. The third and fourth ends of the first Hall element are arranged along the second direction. The first and second ends of the second Hall element are arranged along the second direction. The third and fourth ends of the second Hall unit are arranged along the third direction; The magnetic sensing unit includes a first sensing unit and a second sensing unit. The direction of the magnetic field component of the signal magnetic field at the first sensing unit is opposite to the direction of the magnetic field component of the signal magnetic field at the second sensing unit. The first sensing unit includes a third Hall element, and the second sensing unit includes a fourth Hall element. The first end of the third Hall unit is coupled to the power supply end, and its second end is coupled to the ground end; the first end of the fourth Hall unit is coupled to the power supply end, its second end is coupled to the ground end, its third end is coupled to the fourth end of the third Hall unit, and its fourth end is coupled to the third end of the third Hall unit. The current sensor includes a first amplifier, a second amplifier, and an operational unit; a third Hall element has its first end coupled to a power supply terminal, its second end coupled to a ground terminal, its third end coupled to a first input terminal of the first amplifier, and its fourth end coupled to a second input terminal of the first amplifier; a fourth Hall element has its first end coupled to a power supply terminal, its second end coupled to a ground terminal, its third end coupled to a first input terminal of the second amplifier, and its fourth end coupled to a second input terminal of the second amplifier; the output terminals of the first and second amplifiers are coupled to the input terminals of the operational unit. The magnetic sensing unit includes a first sensing unit, a second sensing unit, and a fifth sensing unit. The direction of the magnetic field component of the signal magnetic field at the first sensing unit is opposite to the direction of the magnetic field component of the signal magnetic field at the second sensing unit, and the same as the direction of the magnetic field component of the signal magnetic field at the fifth sensing unit. The first sensing unit includes a third Hall element, the second sensing unit includes a fourth Hall element, and the fifth sensing unit includes a fifth Hall element. The first end of the third Hall unit is coupled to the power supply end, and its second end is coupled to the ground end; the first end of the fourth Hall unit is coupled to the power supply end, its second end is coupled to the ground end, its third end is coupled to the fourth end of the third Hall unit, and its fourth end is coupled to the third end of the third Hall unit. The first end of the fifth Hall unit is coupled to the power supply end, its second end is coupled to the ground end, its third end is coupled to the third end of the third Hall unit, and its fourth end is coupled to the fourth end of the third Hall unit.

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