Method for measuring high-power semiconductor static pulse current and time precision

Abstract

The application discloses a method for measuring high-power semiconductor static pulse current and time precision, and relates to a hardware system composed of a power module, a communication module, a signal acquisition module, a control module, a signal output module and a pulse source power module; the control module starts a self-checking function, detects the working state and error reporting condition of each module, and automatically calibrates the sampling delay under the current state. The method for measuring high-power semiconductor static pulse current and time precision has the advantages that through the integrated circuit board design of signal acquisition, data processing, data transmission and output control, the pulse signal with the corresponding voltage value which is obtained through the protected signal acquisition and data processing and finally output can be controlled by the upper computer, variable range can be realized, the size of the pulse source current can be controlled, and the automatic delay calibration function is simultaneously provided, so that the sampling delay of the equipment and devices can be automatically set, and the measurement precision is ensured.

Description

Technical Field

[0001] This invention relates to the field of IGBT testing technology, and in particular to a method for measuring the static pulse current and timing accuracy of high-power semiconductors. Background Technology

[0002] The static pulse current and time accuracy measurement method is a static pulse current testing method applicable to various IGBT devices. With the rapid development of semiconductor technology, Insulated Gate Bipolar Transistors (IGBTs), as core power devices in power electronics, are widely used in high-power scenarios such as new energy vehicles, rail transportation, and energy storage systems. Static characteristic testing of IGBTs is a crucial means of evaluating IGBT performance (such as threshold voltage Vth, on-resistance Rds(on), breakdown voltage BVDSS, leakage current IDSS, etc.). The test current and voltage levels must match the actual operating conditions of the IGBT. With continuous technological advancements, the requirements for static pulse current and time accuracy measurement methods are becoming increasingly stringent.

[0003] Existing methods for measuring static pulse current and time accuracy have certain drawbacks. They have low functional integration, rely on external instruments, and usually require multiple independent devices to be used in combination to complete a series of test processes such as triggering and acquisition, which is complex and costly.

[0004] Using an external independent signal generator to generate pulse waveforms to control the test current can easily lead to false triggering during parameter setting, causing false discharge in the pulse source circuit and damaging the device under test.

[0005] If the source meter has insufficient protection capabilities, and the voltage parameters set by the pulse source exceed the range of the source meter, it will cause the source meter to malfunction or even be damaged, affecting the system stability and test safety.

[0006] The measurement delay of triggering and acquisition has no self-calibration capability. The measurement delay varies nonlinearly under different batches of equipment and different test parameters. The fitting curve needs to be pre-calibrated before leaving the factory. In actual testing, it is manually set, which is cumbersome and easy to introduce errors. Therefore, we propose a method for measuring the static pulse current and timing accuracy of high-power semiconductors. Summary of the Invention

[0007] Technical Problem Solved: To address the shortcomings of existing technologies, this invention provides a method for measuring the static pulse current and timing accuracy of high-power semiconductors. Through an integrated circuit board design for signal acquisition, data processing, data transmission, and output control, it enables control by a host computer, allowing for variable range signal acquisition, data processing, and protection, ultimately outputting a pulse signal with the corresponding voltage value. This achieves control over the magnitude of the pulse source current and also features automatic delay calibration, automatically setting the sampling delay of equipment and devices to ensure measurement accuracy. This effectively solves the problems in the background technology.

[0008] Technical Solution: To achieve the above objectives, the technical solution adopted by this invention is as follows: a method for measuring the static pulse current and timing accuracy of high-power semiconductors, based on a hardware system composed of a power supply module, a communication module, a signal acquisition module, a control module, a signal output module, and a pulse source power module, specifically including the following operational steps:

[0009] S1: System self-test: The control module starts the self-test function to detect the working status and error status of each module, automatically calibrate the sampling delay under the current state, and synchronize the results to the memory and the host computer program;

[0010] S2: Parameter settings: Test parameters are set through the human-machine interface, including test current direction, voltage magnitude, current magnitude, number of tests, etc.

[0011] S3: Test Execution: The control module captures the test parameters from the host computer, adjusts the signal output module to output the corresponding pulse signal, automatically adjusts the sampling delay according to the test parameters, outputs a synchronous trigger signal and immediately samples, and captures the current and voltage values ​​of the device under test.

[0012] S4: Real-time monitoring: The signal acquisition module monitors the output current of the pulse source in real time, and the control module automatically calculates the output current magnitude, pulse width, and rise and fall times through an internal algorithm;

[0013] S5: Result Recording: After the test is completed, the control module will synchronize the collected data to the host computer. The system will automatically record the test data and waveforms, which can be observed on the host computer.

[0014] As a preferred technical solution of this application, the signal acquisition module includes an ADA4523-1 operational amplifier, multiple sets of variable resistor networks controlled by signal relays, and an AD7606C eight-channel high-precision SAR ADC chip. The ADA4523-1 operational amplifier performs differential processing on the input signal, the variable resistor network adjusts the signal amplification factor, and the AD7606C chip completes synchronous data acquisition with an acquisition rate of 1M / s, a resolution of 16bit, and an acquisition voltage range of -10V to +10V.

[0015] As a preferred technical solution of this application, the control module is based on the STM32H750 chip and is equipped with an independent program download port, a hardware reset button, a hardware control button and a running / error status indicator. It has built-in interference filtering algorithm, adaptive signal acquisition algorithm and automatic delay calibration algorithm, which can automatically determine the rising edge, pulse width and falling edge time of the pulse signal without the need to manually set the sampling delay.

[0016] As a preferred technical solution of this application, the power module inputs a 12V DC signal through an external interface, which is processed by the power chip into REF voltage, 5V / 3.3V main power supply, and ±12V power supply, respectively providing adaptive operating voltages for the control module, signal acquisition module, and signal output module.

[0017] As a preferred technical solution of this application, the communication module consists of a W5500 Ethernet control chip and a CH340 serial communication chip, supporting TCP / IP protocol LAN port communication with a maximum rate of 100Mbps and variable baud rate serial port communication via USB Type-C interface. The digital IO port is configured with a protection circuit. The W5500 chip is connected to the host computer through the HR911105A type RJ45 interface with built-in network transformer to achieve isolation protection.

[0018] As a preferred technical solution of this application, the signal output module includes a DAC1220E high-precision DAC chip, a TP2582 conditioning circuit, and a MOSFET chopper circuit. The DAC1220E chip has a maximum output resolution of 20 bits. After passing through the TP2582 conditioning circuit, the output voltage range can be switched between ±5V and ±10V. The MOSFET chopper circuit converts the DC signal into a pulse signal with a pulse width and timing accuracy of 1ns.

[0019] As a preferred technical solution of this application, the pulse source power module is composed of an H-bridge circuit consisting of a 0-1000V adjustable DC power supply, a 1F energy storage capacitor, a current transformer, and four high-power IGBT modules. The direction of the test current is adjusted by controlling the conduction mode of the IGBT modules, and the current magnitude and pulse time are controlled by the pulse waveform of the signal output module.

[0020] As a preferred technical solution of this application, the system has a built-in multi-level fault detection and processing mechanism, which can detect faults such as overvoltage, overcurrent, and module abnormality in real time and execute protection actions. At the same time, it integrates static current testing and short-circuit testing functions. The acquisition range and rate of each channel of the signal acquisition module can be independently adjusted in real time by software to adapt to the testing needs of different models of high-power semiconductor devices.

[0021] Beneficial Effects: Compared with the prior art, the present invention provides a method for measuring the static pulse current and timing accuracy of high-power semiconductors, which has the following beneficial effects: This method for measuring the static pulse current and timing accuracy of high-power semiconductors, through the integrated circuit board design of signal acquisition, data processing, data transmission and output control, realizes control by a host computer, can perform variable range, has protection for signal acquisition, data processing and finally outputs a pulse signal with corresponding voltage value, realizes control of the pulse source current magnitude, and has an automatic delay calibration function, which can automatically set the sampling delay of the equipment and devices to ensure measurement accuracy;

[0022] Comprehensive protection and control: Through the pre-processing of the signal acquisition module and the related protection circuit design of the digital IO interface, the impact of external peak current on the system can be avoided, greatly reducing the failure rate.

[0023] Stable output control: The use of a high-precision DAC chip and chopper circuit avoids false triggering when setting the waveform.

[0024] High degree of functional integration: It integrates signal acquisition, error calibration, measurement triggering, and parameter control, and integrates interference filtering algorithm and adaptive signal acquisition algorithm. Compared with existing systems, it is more convenient to use, lower in cost, and significantly improves test safety and reliability.

[0025] High compatibility: The variable sampling amplitude design has good compatibility and can be adapted to different models of IGBT devices, reducing the adaptation cost of the test system. The entire static pulse current and time accuracy measurement method has a simple structure, is easy to operate, and performs better than traditional methods. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the overall structure of the method for measuring the static pulse current and timing accuracy of high-power semiconductors according to the present invention.

[0027] Figure 2 This is a circuit diagram of the acquisition module unit in the method for measuring the static pulse current and timing accuracy of high-power semiconductors according to the present invention.

[0028] Figure 3 This is a circuit diagram of the communication module unit in the method for measuring the static pulse current and timing accuracy of high-power semiconductors according to the present invention.

[0029] Figure 4 This is a circuit diagram of the signal output module unit in the method for measuring the static pulse current and timing accuracy of high-power semiconductors according to the present invention.

[0030] Figure 5This is a circuit diagram of the control module unit in the method for measuring the static pulse current and timing accuracy of high-power semiconductors according to the present invention. Detailed Implementation

[0031] The technical solution of the present invention will be clearly and completely described below with reference to the accompanying drawings and specific embodiments. However, those skilled in the art will understand that the embodiments described below are some embodiments of the present invention, but not all embodiments, and are only used to illustrate the present invention, and should not be regarded as limiting the scope of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall be followed. Where the manufacturers of reagents or instruments are not specified, they are all conventional products that can be purchased commercially.

[0032] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0033] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0034] like Figure 1-5 As shown, the method for measuring the static pulse current and timing accuracy of high-power semiconductors is based on a hardware system consisting of a power supply module, a communication module, a signal acquisition module, a control module, a signal output module, and a pulse source power module. The specific operational steps include:

[0035] S1: System self-test: The control module starts the self-test function to detect the working status and error status of each module, automatically calibrate the sampling delay under the current state, and synchronize the results to the memory and the host computer program;

[0036] S2: Parameter settings: Test parameters are set through the human-machine interface, including test current direction, voltage magnitude, current magnitude, number of tests, etc.

[0037] S3: Test Execution: The control module captures the test parameters from the host computer, adjusts the signal output module to output the corresponding pulse signal, automatically adjusts the sampling delay according to the test parameters, outputs a synchronous trigger signal and immediately samples, and captures the current and voltage values ​​of the device under test.

[0038] S4: Real-time monitoring: The signal acquisition module monitors the output current of the pulse source in real time, and the control module automatically calculates the output current magnitude, pulse width, and rise and fall times through an internal algorithm;

[0039] S5: Result Recording: After the test is completed, the control module will synchronize the collected data to the host computer. The system will automatically record the test data and waveforms, which can be observed on the host computer.

[0040] Through an integrated circuit board design for signal acquisition, data processing, data transmission, and output control, the system is controlled by a host computer. It can perform variable-range signal acquisition, data processing, and ultimately output a pulse signal with the corresponding voltage value, thereby controlling the magnitude of the pulse source current. It also has an automatic delay calibration function, which can automatically set the sampling delay of the equipment and devices to ensure measurement accuracy.

[0041] The signal acquisition module includes an ADA4523-1 operational amplifier, multiple sets of variable resistor networks controlled by signal relays, and an AD7606C eight-channel high-precision SAR ADC chip. The ADA4523-1 operational amplifier performs differential processing on the input signal, the variable resistor network adjusts the signal amplification factor, and the AD7606C chip completes synchronous data acquisition with an acquisition rate of 1M / s, a resolution of 16bit, and an acquisition voltage range of -10V to +10V.

[0042] The control module is based on the STM32H750 chip and has an independent program download port, hardware reset button, hardware control button and running / error status indicator. It has built-in interference filtering algorithm, adaptive signal acquisition algorithm and automatic delay calibration algorithm, which can automatically determine the rising edge, pulse width and falling edge time of the pulse signal without the need to manually set the sampling delay.

[0043] The power module receives a 12V DC signal through an external interface, which is processed by the power chip into REF voltage, 5V / 3.3V main power supply, and ±12V power supply, providing suitable operating voltages for the control module, signal acquisition module, and signal output module, respectively.

[0044] The communication module consists of a W5500 Ethernet control chip and a CH340 serial communication chip, supporting TCP / IP protocol LAN communication with a maximum speed of 100Mbps and variable baud rate serial communication via USB Type-C interface. The digital IO port is equipped with protection circuit. The W5500 chip is connected to the host computer through the HR911105A RJ45 interface with built-in network transformer to achieve isolation protection.

[0045] The signal output module includes a DAC1220E high-precision DAC chip, a TP2582 conditioning circuit, and a MOSFET chopper circuit. The DAC1220E chip has a maximum output resolution of 20 bits. After the TP2582 conditioning circuit, the output voltage range can be switched between ±5V and ±10V. The MOSFET chopper circuit converts the DC signal into a pulse signal with a pulse width and timing accuracy of 1ns.

[0046] The pulse source power module consists of an H-bridge circuit composed of a 0-1000V adjustable DC power supply, a 1F energy storage capacitor, a current transformer, and four high-power IGBT modules. The direction of the test current is adjusted by controlling the conduction mode of the IGBT modules, and the current magnitude and pulse duration are controlled by the pulse waveform of the signal output module.

[0047] The system has a built-in multi-level fault detection and handling mechanism, which can detect faults such as overvoltage, overcurrent, and module abnormalities in real time and execute protection actions. It also integrates static current testing and short-circuit testing functions. The acquisition range and rate of each channel of the signal acquisition module can be independently adjusted in real time by software to adapt to the testing needs of different models of high-power semiconductor devices.

[0048] A method for measuring the static pulse current and timing accuracy of high-power semiconductors includes a power supply module, a communication module, a signal acquisition module, a control module, a signal output module, and a pulse source power module, realizing an integrated solution for signal acquisition, data processing, data transmission, and output control. The signal acquisition module adopts an integrated multi-channel high-precision synchronous digital acquisition and analysis circuit board design based on the AD7606C chip. As a unique and innovative operating point of the system, it specifically includes the following structure:

[0049] Signal acquisition unit: Uses AD7606C eight-channel high-precision SAR ADC chip, which can perform eight-channel data acquisition simultaneously, with a data acquisition rate of up to 1M / s and a data acquisition resolution of up to 16bit. The signal acquisition range and signal acquisition rate of each channel can be independently adjusted in real time by software according to actual needs.

[0050] Signal processing unit: Uses ADA4523-1 operational amplifier and signal relays to control multiple sets of variable resistor networks to adjust the amplification factor of the input signal, thereby changing the voltage range that the subsequent signal acquisition unit can acquire.

[0051] Control module: Utilizes an STM43H750 chip for control, featuring a dedicated program download port, hardware reset button, hardware control buttons, and running and error status indicator lights. The control module connects to other modules via on-board wiring.

[0052] Power Module: The system inputs a 12V DC signal through an external interface. The REF3030 and REF3025 process the signal to obtain the REF voltage required by the main control module and signal output module. The MP2359DT and BL8033CB6TR process the signal to provide 5V and 3.3V main power to the main control board, supplying power to the control chip and acquisition chip. The TPS61040DBVR converts the 12V voltage to ±16V, and then the L79L12ACUTR and L78L12ABUTR step it down to ±12V to supply power to the signal output module.

[0053] Communication module: Utilizing the W5500 Ethernet control chip and the CH340 serial communication chip, it supports LAN communication with the host computer via TCP / IP protocol at a maximum speed of 100Mbps, and variable baud rate serial communication via USB Type-C for connection to the host computer. These communication methods allow for system debugging, calibration, parameter preview, parameter setting, and data collection. The communication module's digital I / O ports are also equipped with protection circuitry to prevent external circuit malfunctions from affecting the system.

[0054] Signal output module: Utilizes the DAC1220E high-precision DAC chip to achieve a variable output voltage range signal output with a maximum resolution of 20 bits. The output signal is then chopped by a MOSFET controlled by the subsequent control module, thereby achieving highly precise and controllable pulse output in terms of time and voltage.

[0055] Pulse source power module: This module uses four high-power IGBT modules to form an H-bridge circuit structure. The conduction mode of the four IGBT modules controls the current direction, and the pulse waveform output by the signal output module controls the current magnitude and duration, ultimately acting on the sample under test to measure relevant parameters.

[0056] Variable amplitude signal acquisition technology: Using signal relays to control multiple sets of variable resistor networks, the amplification factor of the input signal is adjusted, thereby changing the voltage range that the signal acquisition unit can acquire.

[0057] Digital I / O port protection technology: Protection circuits are configured on each port of the communication module to achieve nanosecond-level overvoltage protection response, protecting the control chip and related circuits.

[0058] Adaptive signal acquisition method: The program can analyze the waveforms acquired by the signal acquisition module, automatically determine the rise time, pulse width time and fall time of the input pulse signal without setting a sampling delay, and process the acquired waveform data.

[0059] Functional integration technology: Integrates static current testing and short-circuit testing functions into one system, completing two different types of tests through the same system.

[0060] Pre-test self-check method: The control module performs status checks on each key component of the system to ensure that the test system is normal before the test can be started.

[0061] Interference filtering method: Digital filtering algorithm is used to process the control signal to improve the system's anti-interference capability.

[0062] Fault handling methods: Establish a multi-level fault detection and handling mechanism to ensure timely protection of the system and the device under test under various fault conditions.

[0063] Control circuit board structure: The overall layout and circuit connection relationship of the control circuit board based on the STM32H750 chip.

[0064] Signal acquisition circuit: including the selection of pre-processing operational amplifiers and ADCs, the selection of resistor values ​​for the resistor network, and the connection method between the signal relays and the resistor network.

[0065] Communication circuit: This includes the method of using the W5500 chip and CH340 chip to realize communication with the host computer, the setting of external digital I / O ports and the design of their protection circuits.

[0066] Signal output circuit: including DAC selection, connection, and circuit design for using MOSFETs to achieve chopping output.

[0067] Pulse source power circuit topology: including the connection relationship and parameter configuration of DC power supply, energy storage capacitor bank, current transformer and IGBT module.

[0068] Power supply circuit: This includes the selection of power supply chips and the overall design of protection circuits.

[0069] Control program algorithms: Current signal control algorithms, interference filtering algorithms, adaptive signal acquisition algorithms, etc., implemented in embedded systems.

[0070] Fault detection and handling program: The program logic that implements system fault detection, fault judgment and fault handling.

[0071] Human-computer interaction program: A program that enables functions such as setting test parameters, monitoring the test process, and displaying test results.

[0072] System overall architecture: the connection relationship and signal flow between the signal acquisition module, control module, signal output module and pulse source power module.

[0073] Test mode switching mechanism: Control logic for switching between static test mode and short-circuit test mode.

[0074] Protection linkage mechanism: a coordination mechanism among various protection units to ensure that protection actions can be executed quickly and accurately in the event of a fault.

[0075] Example 1: System Overall Architecture

[0076] like Figure 1 As shown in the figure, this embodiment provides a method for measuring the static pulse current and timing accuracy of third-generation semiconductor devices based on STM32H750, including a power supply module, a communication module, a signal acquisition module, a control module, a signal output module, and a pulse source power module.

[0077] Power Module: The system inputs a 12V DC signal through an external interface. The REF3030 and REF3025 process the signal to obtain the REF voltage required by the main control module and signal output module. The MP2359DT and BL8033CB6TR process the signal to provide 5V and 3.3V main power to the main control board, supplying power to the control chip and acquisition chip. The TPS61040DBVR converts the 12V voltage to ±16V, and then the L79L12ACUTR and L78L12ABUTR step it down to ±12V to supply power to the signal output module.

[0078] Communication module: Utilizing the W5500 Ethernet control chip and the CH340 serial communication chip, it supports LAN communication with the host computer via TCP / IP protocol at a maximum speed of 100Mbps, and variable baud rate serial communication via USB Type-C for connection to the host computer. These communication methods allow for system debugging, calibration, parameter preview, parameter setting, and data collection. The communication module's digital I / O ports are also equipped with protection circuitry to prevent external circuit malfunctions from affecting the system.

[0079] Signal acquisition module: Utilizing an ADA4523-1 operational amplifier, and signal relays controlling multiple variable resistor networks, the amplification factor of the input signal is adjusted, thereby changing the voltage range that the subsequent signal acquisition unit can acquire. It employs the AD7606C eight-channel high-precision SAR ADC chip, capable of simultaneous eight-channel data acquisition with a data acquisition rate up to 1M / s and a data resolution up to 16bit. The signal acquisition range and rate of each channel can also be independently adjusted in real-time via software according to actual needs.

[0080] Control module: Utilizes an STM43H750 chip for control, featuring a dedicated program download port, hardware reset button, hardware control buttons, and running and error status indicator lights. The control module connects to other modules via on-board wiring.

[0081] Signal output module

[0082] The DAC1220E high-precision DAC chip and the subsequent TP2582 conditioning circuit are used to condition the voltage output range, achieving a signal output with a maximum resolution of 20 bits that can switch between ±5V and ±10V. The output signal is then chopped by a MOSFET controlled by the control module in the subsequent stage, thus achieving highly precise and controllable pulse output in terms of time and voltage.

[0083] Pulse source power module: It consists of a DC power supply (output voltage adjustable from 0-1000V), a 1F energy storage capacitor, a current transformer and an IGBT module. The direction of the test current can be adjusted by switching the conduction mode of the four IGBTs.

[0084] Example 2: Signal Acquisition Circuit Design

[0085] like Figure 2 As shown, the pre-processing stage of the signal acquisition circuit uses an ADA4523-1 operational amplifier and a signal relay to control multiple sets of variable resistor networks to adjust the amplification factor of the input signal, thereby meeting the requirements for wide-range voltage signal measurement. Finally, the processed signal is fed into the AD7606C eight-channel high-precision SAR ADC chip, where it undergoes internal processing and is then transmitted to the control module for further processing via a digital interface.

[0086] Circuit connection: The ADA4523 forms an instrumentation operational amplifier to perform differential signal processing on the input signal. The amplification factor is switched by an external signal relay. Finally, the processed signal is sent to the AD7606C for sampling. Finally, the data is sent to the control module for processing through the digital interface.

[0087] Example 3: Communication Circuit

[0088] like Figure 3 As shown, the system consists of a W5500 chip and a CH340 chip. The W5500 connects to the host computer via an HR911105A RJ45 interface with a built-in network transformer to achieve isolation protection. The CH340 connects to the host computer via a USB Type-C interface. Both methods can be used for debugging, calibration, parameter preview, parameter setting, and data collection.

[0089] Circuit connection: The HR911105A is connected to the W5500 chip on the board. The TCP / IP protocol signal transmitted from the host computer is processed by the W5500 and converted into an SPI protocol signal, which is then transmitted to the control module for processing.

[0090] Example 4: Signal Output Circuit

[0091] like Figure 4 As shown, the signal output circuit uses a DAC1220E high-precision DAC and a subsequent TP2582 conditioning circuit to output voltage signals. The DC signal is converted into a pulse signal with controllable pulse width by a MOSFET controlled by the control module.

[0092] Example 5: Control Circuit

[0093] The control module uses an STM43H750 chip and features a dedicated program download port, a hardware reset button, hardware control buttons, and running and error status indicator lights. The control module connects to other modules via on-board wiring.

[0094] Example 6: Test Procedure

[0095] The testing method of the present invention includes the following steps:

[0096] Step 1: System self-test

[0097] Before testing, the control module starts its self-test function to check the current working status and error status of each module, calibrate the sampling delay under the current status, and synchronize the results to the memory and the host computer program.

[0098] Step 2: Parameter Settings

[0099] Test parameters can be set through the human-machine interface, including test current direction, voltage magnitude, current magnitude, and number of tests.

[0100] Step 3: Test Execution

[0101] The control module captures the test parameters sent by the host computer, adjusts the signal output module to output a corresponding pulse signal, and automatically adjusts the sampling delay according to different test settings. It outputs a synchronous trigger signal and immediately samples to capture the current and voltage values ​​of the IGBT device under test.

[0102] Step 4: Real-time monitoring

[0103] During the test, the signal acquisition module monitors the output current of the pulse source in real time, and the internal algorithm automatically calculates the output current magnitude, pulse width, and rise and fall times.

[0104] Step 5: Record the results

[0105] After the test is completed, the control module synchronizes the data to the host computer. The system automatically records the test data and waveforms, which can be observed on the host computer.

[0106] It should be noted that, in this document, relational terms such as first and second (number one, number two), etc., are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0107] The foregoing has shown and described the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of the invention. Various changes and modifications can be made to the invention without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claimed invention.

Claims

1. A method for measuring the static pulse current and timing accuracy of high-power semiconductors, characterized in that: The hardware system, consisting of a power supply module, a communication module, a signal acquisition module, a control module, a signal output module, and a pulse source power module, includes the following operational steps: S1: System self-test: The control module starts the self-test function to detect the working status and error status of each module, automatically calibrate the sampling delay under the current state, and synchronize the results to the memory and the host computer program; S2: Parameter settings: Test parameters are set through the human-machine interface, including test current direction, voltage magnitude, current magnitude, number of tests, etc. S3: Test Execution: The control module captures the test parameters from the host computer, adjusts the signal output module to output the corresponding pulse signal, automatically adjusts the sampling delay according to the test parameters, outputs a synchronous trigger signal and immediately samples, and captures the current and voltage values ​​of the device under test. S4: Real-time monitoring: The signal acquisition module monitors the output current of the pulse source in real time, and the control module automatically calculates the output current magnitude, pulse width, and rise and fall times through an internal algorithm; S5: Result Recording: After the test is completed, the control module will synchronize the collected data to the host computer. The system will automatically record the test data and waveforms, which can be observed on the host computer.

2. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The signal acquisition module includes an ADA4523-1 operational amplifier, multiple sets of variable resistor networks controlled by signal relays, and an AD7606C eight-channel high-precision SAR ADC chip. The ADA4523-1 operational amplifier performs differential processing on the input signal, the variable resistor network adjusts the signal amplification factor, and the AD7606C chip completes synchronous data acquisition with an acquisition rate of 1M / s, a resolution of 16bit, and an acquisition voltage range of -10V to +10V.

3. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The control module is based on the STM32H750 chip and is equipped with an independent program download port, hardware reset button, hardware control button and running / error status indicator. It has built-in interference filtering algorithm, adaptive signal acquisition algorithm and automatic delay calibration algorithm, which can automatically determine the rising edge, pulse width and falling edge time of the pulse signal without the need to manually set the sampling delay.

4. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The power module receives a 12V DC signal through an external interface, which is processed by the power chip into REF voltage, 5V / 3.3V main power supply, and ±12V power supply, providing suitable operating voltages for the control module, signal acquisition module, and signal output module, respectively.

5. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The communication module consists of a W5500 Ethernet control chip and a CH340 serial communication chip, supporting TCP / IP protocol LAN port communication with a maximum speed of 100Mbps and variable baud rate serial port communication via USB Type-C interface. The digital IO port is equipped with protection circuit. The W5500 chip is connected to the host computer through the HR911105A RJ45 interface with built-in network transformer to achieve isolation protection.

6. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The signal output module includes a DAC1220E high-precision DAC chip, a TP2582 conditioning circuit, and a MOSFET chopper circuit. The DAC1220E chip has a maximum output resolution of 20 bits. After passing through the TP2582 conditioning circuit, the output voltage range can be switched between ±5V and ±10V. The MOSFET chopper circuit converts the DC signal into a pulse signal with a pulse width and timing accuracy of 1ns.

7. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The pulse source power module consists of an H-bridge circuit composed of a 0-1000V adjustable DC power supply, a 1F energy storage capacitor, a current transformer, and four high-power IGBT modules. The direction of the test current is adjusted by controlling the conduction mode of the IGBT modules, and the current magnitude and pulse duration are controlled by the pulse waveform of the signal output module.

8. The method for measuring the static pulse current and timing accuracy of high-power semiconductors according to claim 1, characterized in that: The system has a built-in multi-level fault detection and processing mechanism, which can detect faults such as overvoltage, overcurrent, and module abnormalities in real time and execute protection actions. It also integrates static current testing and short-circuit testing functions. The acquisition range and rate of each channel of the signal acquisition module can be independently adjusted in real time by software to adapt to the testing needs of different models of high-power semiconductor devices.

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