Testing methods, testing devices and electronic equipment for switching power supplies

Abstract

This application provides a detection method, detection device, and electronic device for a switching power supply. The detection method includes: acquiring real-time current along the charging / discharging path in response to the charging / discharging of the bootstrap capacitor; calculating dynamic drive charge based on the real-time current; and diagnosing the aging state of the MOSFET based on the dynamic drive charge. By using the existing bootstrap capacitor in the switching power supply for dynamic charge monitoring to achieve aging monitoring of internal power devices, no external components are needed. Furthermore, using dynamic drive charge provides higher diagnostic sensitivity compared to monitoring macroscopic parameters, achieving end-to-end monitoring from the power source to the load, thereby enabling health monitoring of internal power devices.

Description

Technical Field

[0001] This application belongs to the field of electronic equipment technology, and in particular relates to a detection method, detection device and electronic equipment for switching power supplies. Background Technology

[0002] Currently, synchronous buck architecture battery charging management chips are widely used in consumer electronics and electric vehicles. Existing monitoring methods for switching power supplies mainly fall into two categories: one is passive protection based on battery parameters, which monitors the voltage, current, and temperature at the battery terminals, using algorithms such as Coulomb's algorithm to estimate battery health, directly reflecting the battery's state and providing some monitoring capability for battery aging. The other is a loop monitoring scheme based on external hardware, which adds buffer circuits or high-frequency current probes to the switching nodes to suppress or observe ringing.

[0003] However, existing technologies for monitoring switching power supplies cannot achieve health monitoring of internal power devices. Summary of the Invention

[0004] This application provides a method, device, and electronic device for detecting switching power supplies, which can realize health monitoring of internal power devices.

[0005] In a first aspect, embodiments of this application provide a method for detecting a switching power supply, the switching power supply including a MOSFET and a bootstrap capacitor, the bootstrap capacitor being connected to the gate drive terminal of the MOSFET; the detection method includes: In response to the charging and discharging of the bootstrap capacitor, the real-time current along the charging and discharging path is obtained; The dynamic driving charge is calculated based on the real-time current. The aging state of the MOS transistor is diagnosed based on the dynamic driving charge.

[0006] Optionally, diagnosing the aging state of the MOSFET based on the dynamic drive charge includes: Obtain the reference drive charge of the bootstrap capacitor when the MOS transistor is in a healthy state; Calculate the charge deviation between the dynamic driving charge and the reference driving charge; The aging condition of the MOS transistor is diagnosed based on the charge deviation.

[0007] Optionally, the calculation of the dynamic driving charge based on the real-time current includes: The real-time current is integrated within the switching cycle to obtain multiple initial dynamic driving charge quantities; The average value of the multiple initial dynamic driving charge quantities is taken to obtain the dynamic driving charge quantity.

[0008] Optionally, after acquiring the real-time current along the charging / discharging path in response to the charging / discharging of the bootstrap capacitor, the detection method further includes: Obtain the waveform data of the real-time current; Ringing warning is given to the power stage loop based on the waveform data.

[0009] Optionally, the step of providing ringing warning for the power stage loop based on the waveform data includes: Extract high-frequency distortion features from the waveform data; The quality factor of the power stage loop is evaluated based on the aforementioned high-frequency distortion characteristics; Ringing warning is provided for the power stage loop based on the quality factor.

[0010] Optionally, after performing ringing warning on the power stage loop based on the waveform data, the detection method further includes: If ringing risk is detected or the MOSFET is aging, the dead time parameter of the MOSFET is adjusted.

[0011] Optionally, if a ringing risk is detected or the MOSFET is aging, adjusting the dead time parameter of the MOSFET includes: If aging of the MOSFET is detected, the dead time of the MOSFET is extended.

[0012] Optionally, adjusting the dead time parameter of the MOSFET if a ringing risk or aging of the MOSFET is detected further includes: If ringing risk is detected, slope compensation is added to the dead-time parameter of the MOS transistor or duty cycle jitter is reduced.

[0013] Secondly, embodiments of this application also provide a detection device for a switching power supply, the switching power supply including a MOSFET and a bootstrap capacitor, the bootstrap capacitor being connected to the gate drive terminal of the MOSFET; the detection device includes: A voltage detection circuit is connected in parallel across the bootstrap capacitor. The voltage detection circuit is used to detect the real-time current on the charging and discharging path of the bootstrap capacitor. A calculation module is connected to the voltage detection circuit, and the calculation module is used to calculate the dynamic driving charge based on the real-time current. A diagnostic module, connected to the calculation module, is used to diagnose the aging state of the MOS transistor based on the dynamic drive charge.

[0014] Thirdly, embodiments of this application also provide an electronic device, including: Switching power supply; A controller, electrically connected to the switching power supply, is used to perform the detection method for the switching power supply as described in any of the preceding claims.

[0015] In the switching power supply detection method, detection device, and electronic device of this application embodiment, the existing bootstrap capacitor in the switching power supply is used for dynamic charge monitoring to realize the aging monitoring of internal power devices. No external components need to be added, and the diagnostic sensitivity of using dynamic driving charge is higher than that of monitoring macroscopic parameters. This realizes full-link monitoring from the power source to the load, thereby enabling health monitoring of internal power devices. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings. In the following description, the same reference numerals denote the same parts.

[0018] Figure 1 This is a flowchart illustrating a switching power supply detection method provided in an embodiment of this application.

[0019] Figure 2 This is another flowchart illustrating the detection method for a switching power supply provided in an embodiment of this application.

[0020] Figure 3 This is a structural block diagram of a switching power supply detection device provided in an embodiment of this application.

[0021] Figure 4 A circuit diagram of the voltage detection circuit in the switching power supply detection device provided in the embodiments of this application.

[0022] Figure 5 This is a structural block diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0024] Currently, synchronous buck architecture battery charging management chips are widely used in consumer electronics and electric vehicles. Existing monitoring methods for switching power supplies mainly fall into two categories. One is passive protection based on battery parameters. This involves monitoring the voltage, current, and temperature at the battery terminals, using algorithms such as Coulomb's algorithm to estimate battery health, directly reflecting the battery's state and providing some monitoring capability for battery aging. However, this technology has a serious "blind spot": it completely fails to detect the health status of the power stage inside the charging chip. Microcracks in the solder joints, package peeling, or gate oxide layer degradation of high-side power MOSFETs (HS-FETs) under long-term thermal cycling can lead to a surge in drive losses or even shoot-through burnout. This "power stage latent aging" is unknowable under current technology, often occurring without warning before system failure, severely impacting the safety of high-reliability scenarios. The other category is loop monitoring schemes based on external hardware. This involves adding buffer circuits or high-frequency current probes to the switching nodes to suppress or observe ringing. Its characteristic is that it can directly observe the power waveform. However, the core problem with this technology is its high cost and incompatibility: adding extra precision sampling resistors or high-frequency ADC pins to consumer products will significantly increase BOM cost and PCB area; at the same time, traditional loop compensation parameters are usually programmed and burned at the factory, and cannot be dynamically adjusted according to the real-time aging status of the MOSFET, which means that the system cannot always work at the optimal efficiency point.

[0025] In other words, current technology cannot monitor the health of internal power devices in switching power supplies.

[0026] In view of the above problems, this application provides a method, device and electronic device for detecting switching power supplies, which will be described below with reference to the accompanying drawings.

[0027] It should be noted that a switching power supply is a high-frequency power conversion device, a type of power supply. Its function is to convert a voltage at a certain level into the voltage or current required by the user through different architectures.

[0028] For example, a switching power supply includes a MOSFET and a bootstrap capacitor. The bootstrap capacitor is connected to the gate drive terminal of the MOSFET and is used to provide a drive voltage for the MOSFET. The MOSFET may be a high-side MOSFET, also known as a high-side power MOSFET, which connects the input voltage and the switching node. Because high-side power MOSFETs are susceptible to microcracks in the solder joints, package peeling, or gate oxide layer degradation during long-term thermal cycling, drive losses can surge or even shoot-through and burn out. Therefore, health monitoring of high-side MOSFETs is necessary.

[0029] Taking a synchronous buck converter as an example, a synchronous buck converter may include a high-side MOSFET, a low-side MOSFET, a bootstrap capacitor, a bootstrap diode, a gate driver, a voltage detection circuit, and a controller.

[0030] The drain of the high-side MOSFET is connected to the input voltage. The source of the high-side MOSFET and the drain of the low-side MOSFET together form a switching node, while the source of the low-side MOSFET is grounded. The high-side and low-side MOSFETs form a half-bridge structure. A bootstrap capacitor is connected between the bootstrap node and the switching node. The anode of the bootstrap diode is connected to the power supply, and the cathode is connected to the bootstrap node. The gate driver drives the gate of the high-side MOSFET based on the drive voltage provided by the bootstrap capacitor at the bootstrap node. A voltage detection circuit is connected in parallel across the bootstrap capacitor, i.e., between the bootstrap node and the switching node. The controller is connected to both the gate driver and the voltage detection circuit.

[0031] It should be noted that this embodiment uses a synchronous buck converter as an example, but the detection method of the present invention is also applicable to other switching power supply topologies that include bootstrap capacitors driving MOSFETs, such as boost converters, buck-boost converters, etc., and this application embodiment does not limit this.

[0032] For example, please refer to Figure 1 As shown, Figure 1 This is a flowchart illustrating a method for detecting a switching power supply provided in an embodiment of this application. This application provides a method for detecting a switching power supply, comprising: Step S110: In response to the charging and discharging of the bootstrap capacitor, obtain the real-time current on the charging and discharging path.

[0033] During normal operation of switching power supplies such as synchronous buck converters, the bootstrap capacitor periodically charges and discharges. Specifically, when the high-side MOSFET is turned off and the low-side MOSFET is turned on, the switching node is pulled down to near ground potential, and the bootstrap capacitor is charged through the bootstrap diode. When the high-side MOSFET needs to be turned on, the bootstrap capacitor discharges, releasing its stored charge to the gate of the high-side MOSFET to charge the gate parasitic capacitance.

[0034] In this embodiment, the real-time current along the charging and discharging path can be obtained by detecting the voltage change across the bootstrap capacitor. For example, a voltage detection circuit is connected in parallel across the bootstrap capacitor to obtain the real-time current along the charging and discharging path by detecting the voltage change across the bootstrap capacitor. Specifically, according to the basic physical relationship of capacitance i(t) = Cbst × dv / dt, where Cbst is the capacitance value of the bootstrap capacitor (a known constant), dv is the voltage change across the bootstrap capacitor, and dt is the corresponding time interval, the voltage detection circuit samples the voltage across the bootstrap capacitor at a preset sampling frequency. The controller calculates the real-time current along the charging and discharging path based on the voltage change between adjacent sampling points and the sampling time interval.

[0035] Because the voltage detection circuit is connected in parallel, its input impedance is extremely high, which will not introduce additional series impedance to the original gate drive circuit, thus achieving current monitoring without affecting the normal driving performance of the MOSFET.

[0036] Step S120: Calculate the dynamic driving charge based on real-time current.

[0037] The calculation of the dynamic driving charge can be performed by a controller, such as by integrating the real-time current over a switching cycle. In one implementation, step S120, calculating the dynamic driving charge based on the real-time current, includes: Integrating the real-time current during the switching cycle yields multiple initial dynamic driving charge quantities. The dynamic driving charge is obtained by averaging multiple initial dynamic driving charge values.

[0038] For example, the controller integrates the real-time current within a switching cycle to obtain the initial dynamic drive charge for each switching cycle. Specifically, the real-time current values ​​at each sampling point within a switching cycle are summed and multiplied by the sampling period to obtain the initial dynamic drive charge for that switching cycle. Since the charge within a single switching cycle may be affected by random factors such as switching noise and load transients, in this embodiment, the controller can continuously collect the initial dynamic drive charge for multiple switching cycles, and average these multiple initial dynamic drive charges to obtain the final dynamic drive charge. Through multi-cycle averaging, the influence of random noise on the charge calculation can be effectively suppressed, improving the stability and reliability of the dynamic drive charge. From a physical perspective, the charge released by the bootstrap capacitor during each discharge process is equal to the charge required to drive the gate of the high-side MOS transistor. Therefore, the dynamic drive charge accurately reflects the gate charge required to drive the high-side MOS transistor.

[0039] Step S130: Diagnose the aging status of the MOSFET based on the dynamic drive charge amount.

[0040] For aging diagnosis of MOSFETs, it can be achieved by comparing the dynamic drive charge with the reference drive charge. In one implementation, step S130, diagnosing the aging state of the MOSFET based on the dynamic drive charge, includes: Obtain the reference drive charge of the bootstrap capacitor when the MOSFET is in a healthy state; Calculate the charge deviation between the dynamic driving charge and the reference driving charge; Diagnosing the aging condition of MOSFETs based on charge deviation.

[0041] For example, the controller first acquires the reference drive charge. The reference drive charge is the reference drive charge of the bootstrap capacitor under the same operating conditions when the high-side MOSFET is in a healthy state. This reference drive charge can be measured and stored in the controller's non-volatile memory during the factory testing phase of the switching power supply, or it can be calibrated during the initial stage of the switching power supply's operation, when the high-side MOSFET has not yet undergone significant aging.

[0042] Subsequently, the controller calculates the charge deviation ΔQ = |Qbst| between the dynamic driving charge Qbst and the reference driving charge Qref. Qref|.

[0043] During long-term operation, the equivalent gate capacitance of a high-side MOSFET may change due to the following aging mechanisms: First, solder joint cracking: thermomechanical stress caused by power cycling leads to fatigue cracks in the bonding solder joints, resulting in a change in the effective parasitic capacitance of the gate circuit. Second, gate oxide degradation: high electric fields and high temperatures accelerate the generation and accumulation of traps in the gate oxide layer, causing a shift in the equivalent value of the gate capacitance. Third, hot carrier injection: high-energy carriers are injected into the gate oxide interface, altering the threshold voltage and gate capacitance characteristics. All of these aging mechanisms will cause changes in the amount of gate charge required to drive the high-side MOSFET, leading to a deviation of the dynamic drive charge Qbst from the reference drive charge Qref.

[0044] The controller compares the charge deviation ΔQ with a preset deviation threshold. When the charge deviation ΔQ is less than or equal to the preset deviation threshold, the high-side MOSFET is determined to be in a healthy state; when the charge deviation ΔQ is greater than the preset deviation threshold, the high-side MOSFET is determined to have an aging risk. Furthermore, the degree of aging can be graded according to the magnitude of the charge deviation ΔQ, for example, dividing the degree of aging into three levels: slight aging, moderate aging, and severe aging, with different levels corresponding to different charge deviation ranges.

[0045] When the diagnostic result indicates that the high-side MOSFET has an aging risk, the controller outputs an aging warning signal to prompt the user or upper-level system to pay attention to the health status of the power stage. For example, if the dynamic drive charge Qbst continuously increases by more than a preset threshold such as 15% compared to the reference drive charge Qref, it is determined that the gate equivalent capacitance of the high-side MOSFET has increased, that is, the solder joint is aging or the oxide layer is deteriorating, triggering an interrupt.

[0046] The detection method for switching power supplies provided in this application uses the original bootstrap capacitor in the switching power supply for dynamic charge monitoring to realize the aging monitoring of internal power devices. No external components need to be added, and the diagnostic sensitivity of using dynamic driving charge is higher than that of monitoring macroscopic parameters. It realizes full-link monitoring from the power source to the load, thereby enabling health monitoring of internal power devices.

[0047] Ringing refers to high-frequency voltage oscillations caused by parasitic parameters during switching. Related technologies cannot provide low-cost early warning for loop ringing. This application also provides a detection method for switching power supplies, which can provide early warning for ringing in power stage loops.

[0048] For example, please refer to Figure 2 As shown, Figure 2 This is another schematic flowchart illustrating the detection method for a switching power supply provided in this application embodiment. After step S110, in response to the charging and discharging of the bootstrap capacitor, the real-time current along the charging and discharging path is acquired, the detection method for the switching power supply further includes: Step S140: Obtain the waveform data of the real-time current.

[0049] Step S150: Provide ringing warning for the power stage loop based on waveform data.

[0050] Regarding steps S140 and S150: Real-time current waveform data can be acquired through the controller. Specifically, the voltage detection circuit acquires the voltage waveform across the bootstrap capacitor at a high sampling frequency, and the controller derives the current waveform data along the charging and discharging path based on the voltage waveform. This current waveform data contains dynamic response information of the power stage loop during switching transients.

[0051] The quality factor of a power stage loop can be evaluated by extracting waveform data. In one embodiment, step S150, providing a ringing warning for the power stage loop based on the waveform data, includes: Extracting high-frequency distortion features from waveform data; The quality factor of the power stage loop is evaluated based on high-frequency distortion characteristics; Ringing warning is provided for the power stage loop based on the quality factor.

[0052] For example, the controller extracts high-frequency distortion features from waveform data. Specifically, a Fast Fourier Transform (FFT) is performed on the current waveform data to obtain frequency domain feature data. Within the time period corresponding to the switching edge, the amplitude of the high-frequency oscillation component is extracted as the high-frequency distortion feature.

[0053] The controller evaluates the quality factor Q of the power stage loop based on high-frequency distortion characteristics. When the quality factor Q of the power stage loop is high, the damping is insufficient, and the high-frequency oscillation component at the switching edge is large, which is reflected in the current waveform as obvious high-frequency distortion. When the quality factor Q is low, the damping is sufficient, and the high-frequency oscillation component is small. Therefore, the amplitude of the high-frequency distortion characteristic is positively correlated with the quality factor Q. If high-frequency decaying oscillations are detected in the waveform, it can be determined that they are caused by ringing coupling from the switching node to the gate, thus determining that the loop is in a critical stable state and a ringing warning can be issued.

[0054] The controller compares the high-frequency distortion characteristics with a preset distortion threshold. When the high-frequency distortion characteristics are greater than the preset distortion threshold, the quality factor Q of the power stage loop is determined to be too high, indicating a risk of ringing, and a ringing warning signal is output. When the high-frequency distortion characteristics are less than or equal to the preset distortion threshold, the power stage loop is determined to be stable.

[0055] In this embodiment, by reusing the voltage detection data across the bootstrap capacitor, both aging diagnosis and ringing warning functions are realized simultaneously without the need for additional sensors or detection circuits, resulting in high data utilization.

[0056] Upon detecting aging and ringing warnings, adaptive adjustments can be made based on the warning signals. For an example, please refer to [link / reference needed]. Figure 2 As shown, after step S150, which involves providing a ringing warning for the power stage loop based on waveform data, the detection method for the switching power supply further includes: Step S160: If ringing risk or MOSFET aging is detected, adjust the dead time parameter of the MOSFET.

[0057] The dead time parameter is a short time interval during which both the upper and lower tubes are turned off to prevent shoot-through.

[0058] In one scenario, dead-time adjustment for MOSFET aging involves extending the dead time of the high-side MOSFET when the controller detects aging. The physical mechanism is that as the high-side MOSFET ages, its switching characteristics gradually degrade, manifesting as slower switching speeds and a longer Miller plateau. Maintaining the original dead time would result in the low-side MOSFET turning on before the high-side MOSFET is fully turned off, or vice versa, potentially causing shoot-through and severe short-circuit faults. Therefore, extending the dead time provides more sufficient switching transition time for the aged MOSFET, effectively avoiding shoot-through risk. The extension is directly proportional to the degree of aging; the more severe the aging, the greater the dead-time extension.

[0059] In another scenario, dead-time adjustment is implemented to address ringing risk: When the controller detects a ringing risk in the power stage loop, slope compensation is added to the dead-time parameter of the high-side MOSFET. Specifically, a gate drive buffer is added to the gate drive signal. By reducing the gate drive current or adding an RC buffer network to the gate drive path, the rate of voltage change at the switching edge is slowed down, thereby suppressing high-frequency oscillations in the power stage loop.

[0060] And / or, when ringing risk is detected, reduce duty cycle jitter. Specifically, reduce the modulation depth of the switching frequency in spread spectrum modulation, thereby reducing the offset range of the switching frequency and thus reducing the spectral broadening effect caused by frequency modulation, and alleviating ringing in the power stage loop at specific frequencies.

[0061] The above-mentioned slope compensation and duty cycle jitter reduction methods can be used independently or in combination, and this application embodiment does not limit this.

[0062] The detection method for switching power supplies provided in this application uses the original bootstrap capacitor in the switching power supply to perform dynamic charge monitoring to realize the aging monitoring of internal power devices. No external components need to be added. Moreover, the diagnostic sensitivity of using dynamic driving charge is higher than that of monitoring macroscopic parameters. It can realize the full life cycle health management of the charging system and improve the user experience.

[0063] For example, please refer to Figure 3 As shown, Figure 3 This is a structural block diagram of a switching power supply detection device provided in an embodiment of this application. To facilitate better implementation of the switching power supply detection method of this application embodiment, this application embodiment also provides a switching power supply detection device 300. The switching power supply detection device 300 is suitable for switching power supplies including MOSFETs and bootstrap capacitors, with the bootstrap capacitor connected to the gate drive terminal of the MOSFET. The detection device 300 includes a voltage detection circuit 310, a calculation module 320, and a diagnostic module 330.

[0064] A voltage detection circuit 310 is connected in parallel across the bootstrap capacitor to detect the real-time current along the charging and discharging path of the bootstrap capacitor. Specifically, the voltage detection circuit 310 calculates the real-time current along the charging and discharging path based on the voltage-current relationship of the capacitor by detecting the voltage change across the bootstrap capacitor. Because it is connected in parallel, the high input impedance of the voltage detection circuit 310 does not introduce additional series impedance into the gate drive circuit.

[0065] For example, please refer to Figure 4 As shown, Figure 4 This is a circuit diagram of a voltage detection circuit in a switching power supply detection device provided in an embodiment of this application. A voltage detection circuit can be connected in parallel on the charging and discharging path of the bootstrap capacitor C0 inside the synchronous buck charging chip to obtain a voltage pulse signal. The two ends of the bootstrap capacitor C0 are respectively connected to the high side and the low side of the MOS drive.

[0066] For example, the voltage detection circuit 310 includes a first resistor R1, a second resistor R2, a third resistor R3, and an amplifier U1. One end of the first resistor R1 is connected to one end of the bootstrap capacitor C0, and the other end of the first resistor R1 is connected to the negative input terminal of the amplifier U1. One end of the second resistor R2 is connected between the other end of the bootstrap capacitor C0 and the positive input terminal of the amplifier U1, and the other end of the second resistor R2 is grounded to GND. One end of the third resistor R3 is connected to the other end of the first resistor R1, and the other end of the third resistor R3 is connected to the output terminal of the amplifier U1. The output terminal of the amplifier U1 is connected to the ADC acquisition I / O port of the MCU.

[0067] The calculation module 320 is connected to the voltage detection circuit 310 and is used to calculate the dynamic driving charge based on the real-time current. Specifically, the calculation module 320 integrates the real-time current during the switching cycle to obtain multiple initial dynamic driving charges, and averages these multiple initial dynamic driving charges to obtain the dynamic driving charge. Furthermore, the calculation module 320 is also used to acquire waveform data of the real-time current and extract high-frequency distortion features from the waveform data to support the ringing warning function.

[0068] The diagnostic module 330 is connected to the calculation module 320 and is used to diagnose the aging state of the MOSFET based on the dynamic drive charge. Specifically, the diagnostic module 330 acquires a reference drive charge, calculates the charge deviation between the dynamic drive charge and the reference drive charge, and determines the aging state of the MOSFET based on the charge deviation. Furthermore, the diagnostic module 330 is also used to evaluate the quality factor of the power stage loop based on high-frequency distortion characteristics and to provide ringing warnings.

[0069] Furthermore, when the diagnostic module 330 detects a risk of ringing or aging of the MOSFET, the dead time parameter of the MOSFET is adjusted, and the specific adjustment strategy is as described above.

[0070] All of the above technical solutions can be combined in any way to form optional embodiments of this application, and will not be described in detail here.

[0071] The switching power supply detection device 300 provided in this application embodiment uses the original bootstrap capacitor in the switching power supply for dynamic charge monitoring to realize the aging monitoring of internal power devices. No external components need to be added, and the diagnostic sensitivity of using dynamic driving charge is higher than that of monitoring macroscopic parameters. It realizes full-link monitoring from power source to load, thereby enabling health monitoring of internal power devices.

[0072] Accordingly, this application also provides an electronic device, such as a mobile phone, tablet computer, laptop computer, wearable device and other portable electronic products. The electronic device includes a switching power supply, which is as described in the above embodiments and will not be repeated here.

[0073] Please see Figure 5 As shown, Figure 5 This is a structural block diagram of an electronic device provided in an embodiment of this application. The electronic device 400 may further include a controller 410 with one or more processing cores, a memory 420 with one or more computer-readable storage media, and a computer program stored on the memory 420 and executable on the controller 410. The controller 410 is electrically connected to the memory 420. Those skilled in the art will understand that the structure of the electronic device 400 shown in the figure does not constitute a limitation on the electronic device, and it may include more or fewer components than shown, or combine certain components, or have different component arrangements.

[0074] The controller 410 is the control center of the electronic device 400. It connects various parts of the electronic device 400 through various interfaces and lines. For example, the controller 410 can be connected to a switching power supply. By running or loading software programs and / or modules stored in the memory 420, and calling data stored in the memory 420, it can perform various functions of the electronic device 400 and process data, thereby monitoring the electronic device 400 as a whole.

[0075] In this embodiment, the controller 410 in the electronic device 400 loads the instructions corresponding to the processes of one or more applications into the memory 420 according to the following steps, and the controller 410 runs the applications stored in the memory 420 to realize various functions: In response to the charging and discharging of the bootstrap capacitor, the real-time current along the charging and discharging path is obtained; The dynamic driving charge is calculated based on the real-time current. The aging state of the MOS transistor is diagnosed based on the dynamic driving charge.

[0076] For details on the implementation of each of the above operations, please refer to the previous examples, which will not be repeated here.

[0077] Those skilled in the art will understand that all or part of the steps in the various methods of the above embodiments can be performed by instructions, or by instructions controlling related hardware. These instructions can be stored in a computer-readable storage medium and loaded and executed by a controller.

[0078] Therefore, embodiments of this application provide a computer-readable storage medium storing a plurality of computer programs, which can be loaded by a controller to execute the steps in the switching power supply detection method provided in embodiments of this application.

[0079] The storage medium may include various media capable of storing program code, such as read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0080] Since the computer program stored in the storage medium can execute the steps in the battery detection method provided in the embodiments of this application, it can achieve the beneficial effects that any of the switching power supply detection methods provided in the embodiments of this application can achieve, as detailed in the previous embodiments, and will not be repeated here.

[0081] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0082] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0083] The detection method, detection device, and electronic device for switching power supplies provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A detection method of a switching power supply, characterized by, The switching power supply includes a MOSFET and a bootstrap capacitor, the bootstrap capacitor being connected to the gate drive terminal of the MOSFET; the detection method includes: In response to the charging and discharging of the bootstrap capacitor, the real-time current along the charging and discharging path is obtained; The dynamic driving charge is calculated based on the real-time current. The aging state of the MOS transistor is diagnosed based on the dynamic driving charge.

2. The detection method according to claim 1, characterized in that, The step of diagnosing the aging state of the MOSFET based on the dynamic drive charge includes: Obtain the reference drive charge of the bootstrap capacitor when the MOS transistor is in a healthy state; Calculate the charge deviation between the dynamic driving charge and the reference driving charge; The aging condition of the MOS transistor is diagnosed based on the charge deviation.

3. The detection method according to claim 1 or 2, characterized in that, The calculation of dynamic driving charge based on the real-time current includes: The real-time current is integrated within the switching cycle to obtain multiple initial dynamic driving charge quantities; The average value of the multiple initial dynamic driving charge quantities is taken to obtain the dynamic driving charge quantity.

4. The detection method according to claim 1, characterized in that, After obtaining the real-time current along the charging / discharging path in response to the charging / discharging of the bootstrap capacitor, the detection method further includes: Obtain the waveform data of the real-time current; Ringing warning is given to the power stage loop based on the waveform data.

5. The detection method according to claim 4, characterized in that, The step of providing ringing warning for the power stage loop based on the waveform data includes: Extract high-frequency distortion features from the waveform data; The quality factor of the power stage loop is evaluated based on the aforementioned high-frequency distortion characteristics; Ringing warning is provided for the power stage loop based on the quality factor.

6. The detection method according to claim 4, characterized in that, After the step of providing ringing warning for the power stage loop based on the waveform data, the detection method further includes: If ringing risk is detected or the MOSFET is aging, the dead time parameter of the MOSFET is adjusted.

7. The detection method according to claim 6, characterized in that, If a ringing risk is detected or the MOSFET is aging, the dead time parameter of the MOSFET is adjusted, including: If aging of the MOSFET is detected, the dead time of the MOSFET is extended.

8. The detection method according to claim 6, characterized in that, The step of adjusting the dead time parameter of the MOSFET if a ringing risk or aging of the MOSFET is detected also includes: If ringing risk is detected, slope compensation is added to the dead-time parameter of the MOS transistor or duty cycle jitter is reduced.

9. A detection device for a switching power supply, characterized in that, The switching power supply includes a MOSFET and a bootstrap capacitor, the bootstrap capacitor being connected to the gate drive terminal of the MOSFET; the detection device includes: A voltage detection circuit is connected in parallel across the bootstrap capacitor. The voltage detection circuit is used to detect the real-time current on the charging and discharging path of the bootstrap capacitor. A calculation module is connected to the voltage detection circuit, and the calculation module is used to calculate the dynamic driving charge based on the real-time current. A diagnostic module, connected to the calculation module, is used to diagnose the aging state of the MOS transistor based on the dynamic drive charge.

10. An electronic device, characterized in that, include: Switching power supply; A controller, electrically connected to the switching power supply, is used to perform the detection method for the switching power supply as described in any one of claims 1 to 8.

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