Magnetic signal sensor and current detection device

Abstract

This invention discloses a magnetic signal sensor and a current detection device. The magnetic signal sensor is used to detect a signal magnetic field, which includes a magnetic field component along a first direction. The magnetic signal sensor includes: a first magnetic field concentrating unit disposed on a reference surface and having a first thickness t relative to the reference surface, wherein the reference surface is parallel to the first direction, and the first magnetic field concentrating unit includes a first side on the side of the first direction or the opposite direction of the first direction; a second magnetic field concentrating unit disposed on the reference surface and close to the first magnetic field concentrating unit, having a first distance g from the first magnetic field concentrating unit; g ≤ 20t; and a first sensing unit disposed close to the first side, located on the side of the first magnetic field concentrating unit in one direction or the opposite direction of that direction, for sensing a magnetic field signal parallel to that direction to generate a first signal, wherein the direction forms an angle with the first direction. The magnetic signal sensor provided by this invention combines multi-directional, high-sensitivity, and wide-range sensing.

Description

Technical Field

[0001] This invention relates to the field of testing and measurement technology, and in particular to a magnetic signal sensor and a current detection device. Background Technology

[0002] Magnetic sensors are used to detect magnetic fields and have a wide range of applications. In consumer electronics, they are used in applications such as triaxial magnetometers to measure the Earth's magnetism, magnetic displacement meters to measure lens travel, and magnetic switches to detect screen opening and closing. In industrial and transportation applications, they are used in angle sensors and current sensors.

[0003] Sensing units used to construct magnetic sensors typically have a relatively singular sensing direction. To enable sensors to sense in more directions, multiple sensing units with different sensing directions can be used, or the direction of the local magnetic field can be changed. However, the former increases the manufacturing cost of the magnetic sensor, while the latter makes it difficult to achieve a wide linear measurement range and suffers from sensitivity loss, rendering it unusable. Summary of the Invention

[0004] One of the objectives of this invention is to provide a magnetic signal sensor to solve the technical problem of loss of linear measurement range and sensitivity when realizing multi-directional sensing in the prior art.

[0005] One of the objectives of this invention is to provide a current detection device.

[0006] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a magnetic signal sensor for detecting a signal magnetic field, the signal magnetic field including a magnetic field component along a first direction. The magnetic signal sensor includes: a first magnetic field concentrating unit disposed on a reference surface and having a first thickness t relative to the reference surface, the reference surface being parallel to the first direction, the first magnetic field concentrating unit including a first side on the side of the first direction or the opposite direction of the first direction; a second magnetic field concentrating unit disposed on the reference surface and close to the first magnetic field concentrating unit, having a first distance g from the first magnetic field concentrating unit in a direction parallel to the reference surface; g ≤ 20t; and a first sensing unit disposed close to the first side, and configured according to at least one of the following: disposed on the side of the first magnetic field concentrating unit in a second direction or the opposite direction of the second direction, for sensing a magnetic field signal parallel to the second direction to generate a first signal, the first direction forming an angle with the second direction; or disposed on the side of the first magnetic field concentrating unit in a third direction or the opposite direction of the third direction, for sensing a magnetic field signal parallel to the third direction to generate a first signal, the first direction forming an angle with the third direction.

[0007] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a magnetic signal sensor for detecting a signal magnetic field, the signal magnetic field including a magnetic field component along a first direction. The magnetic signal sensor includes: a first magnetic field concentrating unit disposed on a reference surface, the reference surface being parallel to the first direction, the first magnetic field concentrating unit including a first side on the side of the first direction or the opposite direction of the first direction; a second magnetic field concentrating unit disposed on the reference surface and close to the first magnetic field concentrating unit; and a first sensing unit disposed close to the first side and configured according to at least one of the following: disposed on the side of the first magnetic field concentrating unit in a second direction or the opposite direction of the second direction, for sensing a magnetic field signal parallel to the second direction to generate a first signal, the first direction forming an angle with the second direction; disposed on the side of the first magnetic field concentrating unit in a third direction or the opposite direction of the third direction. On one side of the direction, a magnetic signal sensor is used to sense a magnetic field signal parallel to a third direction to generate a first signal, the first direction forming an angle with the third direction; the magnetic signal sensor is configured according to at least one of the following: a first magnetic field concentrating unit has a first thickness t relative to a reference surface, the first magnetic field concentrating unit has a first dimension D in the third direction, D / t≥1; the first magnetic field concentrating unit has a first thickness t relative to a reference surface, the first magnetic field concentrating unit has a first dimension D in the third direction, D / t≤40; a second magnetic field concentrating unit is disposed on the reference surface and has a first thickness t relative to the reference surface, the first magnetic field concentrating unit has a first dimension D in the third direction, D / t≥1; the second magnetic field concentrating unit is disposed on the reference surface and has a first thickness t relative to the reference surface, the first magnetic field concentrating unit has a first dimension D in the third direction, D / t≤40.

[0008] To achieve one of the above-mentioned objectives, one embodiment of the present invention provides a current detection device for detecting the current flowing through a conductor. The current detection device includes a magnetic signal sensor, configured as in any technical solution. When the current detection device detects the current in the conductor, the magnetic signal sensor is located on one side of the conductor in a second direction, and the direction of the current in the conductor is parallel to a third direction.

[0009] Compared with existing technologies, the magnetic signal sensor provided by this invention, by setting two magnetic field concentration units and coupling them together, can improve the saturated magnetic field strength to a certain extent. Since the magnetic field component generated by concentrating the signal magnetic field no longer changes with the signal magnetic field itself when the magnetic field concentration unit is in a saturated state, improving the saturated magnetic field strength can make the magnetic field concentration unit reach the saturation state later, prolonging the stage of linear change of the magnetic field component with the signal magnetic field and expanding the linear sensing range of the magnetic signal sensor. By controlling the interval between the two magnetic field concentration units, the ratio of the magnetic field component to the signal magnetic field can always be greater than 1, which means that the magnetic signal sensor can always obtain a high magnetic field component and has high sensitivity. Thus, it takes into account multi-directional, high sensitivity and wide-range sensing. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the structure of the first embodiment of the current detection device of the present invention.

[0011] Figure 2 This is a schematic diagram of the structure of the second embodiment of the current detection device of the present invention.

[0012] Figure 3 This is a schematic diagram of the third embodiment of the current detection device of the present invention.

[0013] Figure 4 This is a schematic diagram of the structure of the first embodiment of the magnetic signal sensor of the present invention.

[0014] Figure 5 This is a schematic diagram of the structure of the second embodiment of the magnetic signal sensor of the present invention.

[0015] Figure 6 This is a schematic diagram illustrating the characteristics of the magnetic field concentration unit of the present invention acting on the signal magnetic field.

[0016] Figure 7 This is a schematic diagram of another aspect of an embodiment of the magnetic signal sensor of the present invention.

[0017] Figure 8 This is a diagram showing the relationship between the structural features of the magnetic field concentration unit of this invention and its effect on the signal magnetic field.

[0018] Figure 9 This is a diagram showing the relationship between the structural features of the magnetic field concentration unit of the present invention and its first and second properties.

[0019] Figure 10 This is a diagram showing the relationship between the structural features and the third property of the magnetic field concentration unit of this invention.

[0020] Figure 11 This is a schematic diagram of the structure of an embodiment of the sensing unit of the present invention.

[0021] Figure 12 This is a structural schematic diagram of the third embodiment of the magnetic signal sensor of the present invention.

[0022] Figure 13 This is a schematic diagram of another embodiment of the sensing unit of the present invention.

[0023] Figure 14 This is a schematic diagram of another embodiment of the sensing unit of the present invention.

[0024] Figure 15 This is a schematic diagram of the fourth embodiment of the magnetic signal sensor of the present invention.

[0025] Figure 16This is a structural schematic diagram of the fifth embodiment of the magnetic signal sensor of the present invention.

[0026] Figure 17 This is a schematic diagram of the sixth embodiment of the magnetic signal sensor of the present invention.

[0027] Figure 18 This is a schematic diagram of the eighth embodiment of the magnetic signal sensor of the present invention. Detailed Implementation

[0028] The present invention will now be described in detail with reference to the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional modifications made by those skilled in the art based on these embodiments are included within the scope of protection of the present invention.

[0029] It should be noted that the term "comprising" or any other variation thereof is intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0030] Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. There is no necessary relationship between "first," "second," and "third," for example, the presence of "second" in an embodiment does not necessarily mean the presence of "first," and so on.

[0031] Furthermore, although the present invention provides descriptions such as "the third embodiment of the current detection device" and "the eighth embodiment of the magnetic signal sensor," this does not mean that the current detection device includes only three embodiments, or that the signal sensor includes only eight embodiments. Technical solutions generated by those skilled in the art based on the combination of embodiments and implementation methods provided by the present invention, as well as technical solutions generated by improving upon common knowledge and conventional technical means, also belong to the embodiments and implementation methods protected by the present invention.

[0032] Current detection device

[0033] One embodiment of the present invention provides a current detection device 1000, such as... Figures 1 to 3 As shown.

[0034] The current detection device 1000 is used to detect the current flowing through the conductor 900.

[0035] When conductor 900 is energized, it generates a signal magnetic field. Current detection device 1000 can detect the current flowing through conductor 900 by detecting the signal magnetic field.

[0036] The current detection device 1000 includes a magnetic signal sensor 100. The magnetic signal sensor 100 is used to detect the signal magnetic field Bs.

[0037] The magnetic signal sensor 100 can be configured according to any of the technical solutions provided below in this invention.

[0038] For example, the signal magnetic field Bs includes a magnetic field component along the first direction X. The magnetic signal sensor 100 includes a first magnetic field concentrating unit 21. The first magnetic field concentrating unit 21 is disposed on a reference surface S0. The first magnetic field concentrating unit 21 has a first thickness t relative to the reference surface S0. The reference surface S0 is parallel to the first direction X. The first magnetic field concentrating unit 21 includes a first side on the side of the first direction X or the opposite direction of the first direction X. The magnetic signal sensor 100 includes a second magnetic field concentrating unit 22. The second magnetic field concentrating unit 22 is disposed on the reference surface S0. The second magnetic field concentrating unit 22 is disposed close to the first magnetic field concentrating unit 21. The second magnetic field concentrating unit 22 and the first magnetic field concentrating unit 21 have a first distance g in a direction parallel to the reference surface S0. g ≤ 20t. The magnetic signal sensor 100 includes a first sensing unit 11. The first sensing unit 11 is disposed close to the first side. In one embodiment, the first sensing unit 11 is disposed on the side of the first magnetic field concentrating unit 21 in the second direction Z or the opposite direction of the second direction Z. The first sensing unit 11 is used to sense a magnetic field signal parallel to the second direction Z to generate a first signal. The first direction X forms an angle with the second direction Z. In one embodiment, the first sensing unit 11 is disposed on the third direction Y or the opposite side of the third direction Y of the first magnetic field concentration unit 21. The first sensing unit 11 is used to sense a magnetic field signal parallel to the third direction Y to generate a first signal, wherein the first direction X forms an angle with the third direction Y.

[0039] For example, the signal magnetic field Bs includes a magnetic field component along the first direction X. The magnetic signal sensor 100 includes a first magnetic field concentration unit 21. The first magnetic field concentration unit 21 is disposed on a reference plane S0. The reference plane S0 is parallel to the first direction X. The first magnetic field concentration unit 21 includes a first side on the side of the first direction X or the opposite direction of the first direction X. The magnetic signal sensor 100 includes a second magnetic field concentration unit 22. The second magnetic field concentration unit 22 is disposed on the reference plane S0. The second magnetic field concentration unit 22 is disposed close to the first magnetic field concentration unit 21. The magnetic signal sensor 100 includes a first sensing unit 11. The first sensing unit 11 is disposed close to the first side. In one embodiment, the first sensing unit 11 is disposed on the side of the first magnetic field concentration unit 21 in the second direction Z or the opposite direction of the second direction Z. The first sensing unit 11 is used to sense a magnetic field signal parallel to the second direction Z to generate a first signal. The first direction X forms an angle with the second direction Z. In one embodiment, the first sensing unit 11 is disposed on the side of the first magnetic field concentration unit 21 in the third direction Y or the opposite direction of the third direction Y. A first sensing unit 11 is used to sense a magnetic field signal parallel to a third direction Y to generate a first signal, wherein the first direction X forms an angle with the third direction Y. In one embodiment, the first magnetic field concentrating unit 21 has a first thickness t relative to the reference surface S0. The first magnetic field concentrating unit 21 has a first dimension D in the third direction Y. D / t ≥ 1. In one embodiment, a second magnetic field concentrating unit 22 has a first thickness t relative to the reference surface S0. The second magnetic field concentrating unit 22 has a first dimension D in the third direction Y. D / t ≥ 1.

[0040] When the current detection device 1000 detects the current in the conductor 900, the magnetic signal sensor 100 is located on the second direction Z side of the conductor 900, and the direction of the current I in the conductor 900 is parallel to the third direction Y.

[0041] Current I generates a circular signal magnetic field Bs, which is parallel to the first direction X at the magnetic signal sensor 100. The magnetic signal sensor 100 detects the signal magnetic field Bs and obtains information about it. The current detection device 1000 can then determine information about the current I based on this information.

[0042] Figure 1 A first embodiment of the current detection device 1000 is shown.

[0043] The magnetic signal sensor 100 includes a substrate 800. The substrate 800 is used to provide a reference surface S0. The surface of the substrate 800 perpendicular to the second direction Z can be the reference surface S0.

[0044] The first side is the side opposite to the first direction X of the first magnetic field concentration unit 21.

[0045] The second magnetic field concentrating unit 22 is disposed on the first magnetic field concentrating unit 21 in the first direction X. The second magnetic field concentrating unit 22 is disposed on the opposite side of the first magnetic field concentrating unit in the second direction Y.

[0046] The second magnetic field concentration unit 22 is located on the reference plane S0.

[0047] The first sensing unit 11 is located on the opposite side of the second direction Z of the first magnetic field concentration unit 21.

[0048] The first direction X is perpendicular to the second direction Z.

[0049] The magnetic signal sensor 100 may further include a second sensing unit 12. The second sensing unit 12 is used to sense a magnetic field signal parallel to the second direction Z to generate a second signal.

[0050] The magnetic signal sensor 100 includes a fourth magnetic field concentration unit 24. A second sensing unit 12 is disposed near the fifth side of the fourth magnetic field concentration unit 24. The first magnetic field concentration unit 21 is a magnetic field concentration unit located on the opposite side of the first direction X among N magnetic field concentration units. The first side is the side of the first magnetic field concentration unit 21 on the opposite side of the first direction X. The fourth magnetic field concentration unit 24 is a magnetic field concentration unit located on the first direction X among N magnetic field concentration units. The fifth side is the side of the fourth magnetic field concentration unit 24 on the first direction. Wherein, N is an integer greater than or equal to 2.

[0051] Conductor 900 includes a reference axis along a third direction Y. The first sensing unit 11 and the second sensing unit 12 are equidistant from the reference axis. The first magnetic field concentrating unit 21 and the fourth magnetic field concentrating unit 24 are equidistant from the reference axis.

[0052] The first sensing unit 11 and the second sensing unit 12 are symmetrical about the reference axis. The first magnetic field concentrating unit 21 and the fourth magnetic field concentrating unit 24 are symmetrical about the reference axis.

[0053] The N magnetic field concentration units are symmetric about the reference axis.

[0054] N magnetic field concentration units can also be symmetric about a reference axis along the first direction X.

[0055] Figure 2 A second embodiment of the current detection device 1000 is shown.

[0056] The parts of the second embodiment that are the same as or similar to the first embodiment will not be described again.

[0057] The second magnetic field concentration unit 22 is disposed on the first direction X side of the first magnetic field concentration unit 21.

[0058] The magnetic signal sensor 100 includes a first magnetic field concentration unit group 101 and a second magnetic field concentration unit group 102. The first magnetic field concentration unit group 101 includes a first magnetic field concentration unit 21, which is located on the opposite side of the first direction X. The second magnetic field concentration unit group 102 includes a fifth magnetic field concentration unit 25, which is located on the side of the first direction X. The first side is the side of the first magnetic field concentration unit 21 on the opposite side of the first direction X. The second sensing unit 12 is disposed near the sixth side of the fifth magnetic field concentration unit 25. The sixth side is the side of the fifth magnetic field concentration unit 25 on the side of the fifth magnetic field concentration unit 25 in the first direction X.

[0059] The first magnetic field concentration unit 21 is located on the first direction X side of the fifth magnetic field concentration unit 25.

[0060] Conductor 900 includes a reference axis along a third direction Y. The first sensing unit 11 and the second sensing unit 12 are equidistant from the reference axis. The first magnetic field concentrating unit 21 and the fifth magnetic field concentrating unit 25 are equidistant from the reference axis.

[0061] The first sensing unit 11 and the second sensing unit 12 are symmetrical about the reference axis. The first magnetic field concentrating unit 21 and the fifth magnetic field concentrating unit 25 are symmetrical about the reference axis.

[0062] The N magnetic field concentration units are symmetric about the reference axis.

[0063] The first magnetic field concentration unit group 101 and the second magnetic field concentration unit group 102 are symmetrical about the reference axis.

[0064] The magnetic field concentrating elements in the first magnetic field concentrating element group 101 can also be symmetric about a reference axis along the first direction X. The magnetic field concentrating elements in the second magnetic field concentrating element group 102 can also be symmetric about a reference axis along the first direction X.

[0065] Figure 3 A third embodiment of the current detection device 1000 is shown.

[0066] The parts of the third embodiment that are the same as or similar to the first or second embodiment will not be described again.

[0067] The second magnetic field concentration unit 22 is disposed on the first direction X side of the first magnetic field concentration unit 21.

[0068] The current detection device 1000 includes two magnetic signal sensors, namely a first sensor 1001 and a second sensor 1002. The first sensor 1001 and the second sensor 1002 are not necessarily separate components. For example, in... Figure 3In this design, the first sensor 1001 and the second sensor 1002 are disposed on the same substrate 800. It can be considered that the first sensor 1001 and the second sensor 1002 are two parts of the overall magnetic signal sensor 100.

[0069] The first sensor 1001 includes a first magnetic field concentration unit 21, a second magnetic field concentration unit 22, a first sensing unit 11 disposed on the side opposite to the first direction X of the first magnetic field concentration unit 21, and a second sensing unit 12 disposed on the side opposite to the first direction X of the second magnetic field concentration unit 22.

[0070] The second sensor 1002 includes an eighth magnetic field concentration unit 28, a ninth magnetic field concentration unit 29, a third sensing unit 13 disposed on the side opposite to the first direction X of the eighth magnetic field concentration unit 28, and a fourth sensing unit 14 disposed on the side opposite to the first direction X of the ninth magnetic field concentration unit 29.

[0071] Conductor 900 includes a first conductor segment 91 and a second conductor segment 92. The first conductor segment 91 and the second conductor segment 92 are spaced apart along a first direction X.

[0072] When the current detection device 1000 detects the current I of the conductor 900, the first sensor 1001 is located on the second direction Z side of the first conductor segment 91, and the second sensor 1002 is located on the second direction Z side of the second conductor segment 92.

[0073] The first conductor segment 91 includes a first reference axis along a third direction Y. The first sensing unit 11 and the second sensing unit 12 are equidistant from the first reference axis. The first magnetic field concentrating unit 21 and the second magnetic field concentrating unit 22 are equidistant from the first reference axis.

[0074] The first sensing unit 11 and the second sensing unit 12 are symmetrical about the first reference axis. The first magnetic field concentrating unit 21 and the second magnetic field concentrating unit 22 are symmetrical about the first reference axis.

[0075] The magnetic field concentration unit in the first sensor 1001 is symmetrical about the first reference axis. The sensing unit in the first sensor 1001 is symmetrical about the first reference axis.

[0076] The second conductor segment 92 includes a second reference axis along a third direction Y. The third sensing unit 13 and the fourth sensing unit 14 are equidistant from the second reference axis. The eighth magnetic field concentrating unit 28 and the ninth magnetic field concentrating unit 29 are equidistant from the second reference axis.

[0077] The third sensing unit 13 and the fourth sensing unit 14 are symmetrical about the second reference axis. The eighth magnetic field concentrating unit 28 and the ninth magnetic field concentrating unit 29 are symmetrical about the second reference axis.

[0078] The magnetic field concentration unit in the second sensor 1002 is symmetrical about the second reference axis. The sensing unit in the second sensor 1002 is symmetrical about the second reference axis.

[0079] The current I is oriented in the third direction Y in the first conductor segment 91. The generated first signal magnetic field Bs1 is oriented in the first direction X at the magnetic signal sensor 100.

[0080] The current I in the second conductor segment 92 is in the opposite direction to the third direction Y. The generated second signal magnetic field Bs2 is in the opposite direction to the first direction X at the magnetic signal sensor 100.

[0081] The first, second, and third embodiments described above can be implemented as three implementations of the magnetic signal sensor 100 provided below. Features not described in detail above will be described below.

[0082] The embodiments of the magnetic signal sensor 100 and the current detection device 1000 provided by the present invention can be combined with each other.

[0083] Magnetic signal sensor

[0084] like Figures 4 to 10 One embodiment of the present invention provides a magnetic signal sensor 100.

[0085] The magnetic signal sensor 100 may include only the element part that is sensitive to the magnetic field, or it may include the element part and the circuit part that works with it.

[0086] The magnetic signal sensor 100 is used to detect the signal magnetic field Bs.

[0087] When the detection direction of the magnetic signal sensor 100 is consistent with the magnetic field direction of the signal magnetic field Bs, the magnetic signal sensor 100 is used to detect the entire signal magnetic field Bs; when the detection direction is inconsistent with the magnetic field direction, the magnetic signal sensor 100 is used to detect the component of the signal magnetic field Bs.

[0088] The signal magnetic field Bs can be a magnetic field carrying specific information or a general magnetic field to be measured.

[0089] The signal magnetic field Bs includes a magnetic field component along the first direction X. The magnetic field direction of the signal magnetic field Bs can be arbitrary, but it must at least include a magnetic field component along the first direction X. The magnetic field direction of the signal magnetic field Bs can also be the first direction X. The first direction X can be parallel to the detection surface of the sensing unit as described later; the detection direction of the sensing unit can be parallel or perpendicular to the first direction X.

[0090] The magnetic signal sensor 100 includes a first magnetic field concentration unit 21.

[0091] The magnetic field concentrator provided by this invention can have a higher permeability than the surrounding environment, and can be used to guide the surrounding magnetic field to deflect towards the location of the magnetic field concentrator. The surrounding environment includes components located near the magnetic field concentrator, and a medium such as air located in the region where the magnetic field concentrator is located.

[0092] For a magnetic field along the first direction X, such as Figure 6 and Figure 7 The magnetic field can be concentrated on the opposite side of the first direction X of the magnetic field concentration unit, and diverge on the first direction X side.

[0093] The first magnetic field concentration unit 21 is located on the reference plane S0.

[0094] The reference surface S0 can be a virtual plane or curved surface, or it can be a plane or curved surface formed by an actual structure. The magnetic signal sensor 100 may include a substrate 800, which is used to provide the reference surface S0. The reference surface S0 may be a surface of the substrate 800 perpendicular to the second direction Z.

[0095] The reference plane S0 is parallel to the first direction X.

[0096] The first magnetic field concentrating unit 21 includes a first side. This first side is either a side along the first direction X of the first magnetic field concentrating unit 21, or a side along the opposite direction of the first direction X of the first magnetic field concentrating unit 21. Figure 4 and Figure 5 For example, if the first direction X is defined as right and the opposite direction of the first direction X is left, then the first side can be the left or right side of the first magnetic field concentration unit 21.

[0097] like Figure 6 As shown, when the magnetic signal sensor 100 includes only one magnetic field concentration unit E2, when the signal magnetic field Bs has a magnetic field component along the first direction X, under the action of the magnetic field concentration unit E2, the signal magnetic field Bs has a magnetic field component Bsz along the second direction Z or a magnetic field component Bsz' along the opposite direction of the second direction Z.

[0098] As the strength of the signal magnetic field Bs increases, the magnetic field components Bsz and Bsz' will first increase approximately linearly, then increase with decreasing slope, and finally tend to remain constant. Based on this, the endpoint of the linear change can be defined as the first threshold Bd, and the starting point of tending to remain constant can be defined as the second threshold Bsat.

[0099] When the signal magnetic field Bs is less than or equal to the first threshold Bd, the magnetic field condensation unit E2 can be considered to be in a linear state; specifically, the magnetic field component Bsz can be positively correlated with the signal magnetic field Bs. When the signal magnetic field Bs is greater than or equal to the second threshold Bsat, the magnetic field condensation unit E2 can be considered to be in a saturated state. When the signal magnetic field Bs is between the first threshold Bd and the second threshold Bsat, the slope of the magnetic field component Bsz as it changes with the signal magnetic field Bs continuously changes and decreases.

[0100] The sensing unit can be positioned at the location where the magnetic field component Bsz or Bsz' is generated to obtain a signal corresponding to the signal magnetic field Bs, thereby generating a sensing signal output.

[0101] When the magnetic field concentration unit E2 is in a linear state, most of the magnetic field components of the signal magnetic field Bs will be deflected by the magnetic field concentration unit E2, so that the magnetic field components Bsz or Bsz' are proportional to the signal magnetic field Bs. When the magnetic field concentration unit E2 is in a saturated state, some magnetic field components in the signal magnetic field Bs will directly pass through the magnetic field concentration unit E2 in the first direction X, so the magnetic field components Bsz or Bsz' no longer increase with the increase of the signal magnetic field Bs.

[0102] If the second threshold Bsat is increased, the first threshold Bd will increase accordingly, thereby increasing the linear variation range of the magnetic field concentration unit E2, which can then be applied to the sensing of signal magnetic fields Bs with a wider variation range.

[0103] Any magnetic field concentration unit provided by the present invention can be implemented as the aforementioned magnetic field concentration unit E2; any sensing unit provided by the present invention can be implemented as the aforementioned sensing unit.

[0104] Based on this, the magnetic signal sensor 100 includes a second magnetic field concentration unit 22.

[0105] The second magnetic field concentration unit 22 is located on the reference plane S0.

[0106] The second magnetic field concentration unit 22 is positioned close to the first magnetic field concentration unit 21.

[0107] The direction parallel to the reference plane S0 can be the first direction X or the opposite direction of the first direction X, or, for example, the third direction Y or the opposite direction of the third direction Y. When the second magnetic field concentrating unit 22 is disposed close to the first magnetic field concentrating unit 21 in the first direction X or the opposite direction of the first direction X, the second magnetic field concentrating unit 22 can be disposed on the side of the first magnetic field concentrating unit 21 in the first direction X, or on the side of the first magnetic field concentrating unit 21 in the opposite direction of the first direction X. The same applies to the third direction X or the opposite direction of the third direction X.

[0108] The magnetic signal sensor 100 includes a first sensing unit 11.

[0109] The first sensing unit 11 may include a component sensitive to magnetic fields, such as a magnetoresistive element or a Hall element. When the Hall element is sensitive to a magnetic field component whose direction is parallel to the second direction Z, the Hall element may be a vertical Hall element, and the detection direction of the first sensing unit 11 may be the second direction Z. When the Hall element is sensitive to a magnetic field component whose direction is parallel to the third direction Y, the Hall element may be a horizontal Hall element, and the detection direction of the first sensing unit 11 may be the third direction Y.

[0110] When the signal magnetic field Bs is detected using a vertical Hall element, the magnetic signal sensor 100 exhibits higher sensitivity, lower power consumption, and the ability to generate a linear output. When the signal magnetic field Bs is detected using a horizontal Hall element, the magnetic signal sensor 100 offers lower manufacturing costs, a simpler structure, and stronger anti-interference capabilities.

[0111] The first sensing unit 11 is positioned close to the first side of the first magnetic field concentration unit 21.

[0112] When the second direction X is defined as right, the first sensing unit 11 can be positioned close to the left or right side of the first magnetic field concentration unit 21. When the third direction Y is defined as back, the first sensing unit 11 can be positioned close to the back or front of the first magnetic field concentration unit 21.

[0113] First Implementation Method

[0114] In this embodiment, a wider linear range and stronger sensitivity can be achieved by adjusting the thickness of the magnetic field concentrator and / or the spacing between the magnetic field concentrators. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0115] The first magnetic field concentration unit 21 has a first thickness t relative to the reference surface S0.

[0116] The first thickness t can be the dimension by which the first magnetic field concentration unit 21 protrudes relative to the reference surface S0. Specifically, it can be the dimension of the first magnetic field concentration unit 21 in the direction perpendicular to the reference surface S0.

[0117] The first thickness t is the thickness perpendicular to the first direction X.

[0118] The second magnetic field concentration unit 22 and the first magnetic field concentration unit 21 have a first interval g in a direction parallel to the reference plane S0.

[0119] The first interval g can be the interval in the direction in which the second magnetic field concentrating unit 22 approaches the first magnetic field concentrating unit 21. For example, when the second magnetic field concentrating unit 22 approaches the first magnetic field concentrating unit 21 in the first direction X, the first interval g is the interval between the second magnetic field concentrating unit 22 and the first magnetic field concentrating unit 21 in the first direction X.

[0120] g≤20t.

[0121] Figure 8 It is a relationship curve obtained through finite element analysis, that is, a curve obtained by dividing finite elements.

[0122] Figure 8 The relationship between Bsz / Bsz0 and g(t) is shown. Bsz is the magnetic field strength of the magnetic field component along the second direction Z formed by the signal magnetic field Bs under the action of the first magnetic field concentration unit 21 and the second magnetic field concentration unit 22. Bsz0 is the magnetic field strength of the magnetic field component along the second direction Z formed by the signal magnetic field Bs under the action of a single magnetic field concentration unit. The larger the value of Bsz / Bsz0, the higher the sensitivity of the structure formed by multiple magnetic field concentration units to the signal magnetic field Bs compared to a single magnetic field concentration unit. g(t) represents g expressed in units of t, and can also be interpreted as g / t.

[0123] Figure 8 The same line represents the same D / t, that is, the same line represents the change of Bsz / Bsz0 with g(t) while other structural parameters of the magnetic field condenser remain unchanged, thus controlling the variable. D is the side length of the first magnetic field condenser 21 or the second magnetic field condenser 22.

[0124] from Figure 8 It can be seen that, regardless of whether the line is dashed or solid, Bsz / Bsz0 decreases as g(t) increases, but for g(t) ≤ 20, Bsz / Bsz0 > 1. Thus, configuring the magnetic field concentrator with the characteristic of g ≤ 20t can enhance the magnetic field concentration capability and magnetic field deflection effect of the magnetic field concentrator through the coupling effect between multiple magnetic field concentrators.

[0125] Furthermore, the coupling effect between multiple magnetic field condensing units can enhance the saturated magnetic field strength, giving the magnetic field condensing units a wider linear range. Combined with the configuration of g / t, the magnetic signal sensor can simultaneously achieve...

[0126] In one embodiment, the first magnetic field concentration unit 21 has a first size D in the third direction Y.

[0127] The third direction Y can be a direction perpendicular to the first direction X.

[0128] The product of the first dimension D and the first thickness t can be the area of ​​the first magnetic field concentration unit 21 subjected to the magnetic field component of the signal magnetic field Bs along the first direction X. Therefore, for irregular shapes, the first dimension D and the first thickness t can also be two other dimensions of that area.

[0129] In one specific embodiment, D / t ≥ 1. The effect of this configuration is described in the second embodiment below.

[0130] In one specific embodiment, D / t ≤ 40. The effect of this configuration is described in the second embodiment below.

[0131] In one specific embodiment, g ≤ 1 / 2D. This allows for a balance between wide-range linear sensing and high sensitivity.

[0132] Second Implementation Method

[0133] In this embodiment, a wider linear range and stronger sensitivity can be achieved by adjusting the thickness and / or planar dimensions of the magnetic field concentrator. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0134] In one embodiment, the thickness and size of the first magnetic field concentration unit 21 are configured.

[0135] The first magnetic field concentration unit 21 has a first thickness t relative to the reference surface S0.

[0136] The first magnetic field concentration unit 21 has a first size D in the third direction Y.

[0137] The third direction Y can be a direction perpendicular to the first direction X.

[0138] The product of the first dimension D and the first thickness t can be the area of ​​the first magnetic field concentration unit 21 subjected to the magnetic field component of the signal magnetic field Bs along the first direction X. Therefore, for irregular shapes, the first dimension D and the first thickness t can also be two other dimensions of that area.

[0139] Optional, D / t≥1.

[0140] Figure 9 The relationship between D / t and Sv, and between D / t and Bd, are shown. Sv expresses the sensitivity of the magnetic signal sensor to the deflection component of the signal magnetic field caused by the magnetic field concentration unit, and can be characterized by Sv = Bsz / Bs. The larger Sv is, the higher the sensitivity. Bd is the aforementioned first threshold; the larger Bd is, the wider the linear range.

[0141] Taking the configuration of the magnetic field concentration unit as a cylinder as an example, refer to Figure 8 The dashed line shows that as D / t increases, Sv also increases, indicating that increasing D / t can improve the sensitivity of the magnetic signal sensor 100 to the deflection component.

[0142] Based on this, configuring the magnetic field concentration unit to D / t≥1 can improve the sensitivity of the magnetic signal sensor 100. Combined with the coupling effect between multiple magnetic field concentration units, the saturated magnetic field strength is increased and the linear range is expanded, so that the magnetic signal sensor 100 can achieve both high sensitivity and wide linear range sensing.

[0143] Optional, D / t≤40.

[0144] Figure 9 The standardization is based on the minimum value of the saturated magnetic field strength of the magnetic field concentration unit.

[0145] Taking the configuration of the magnetic field concentration unit as a cylinder as an example, refer to Figure 8 center solid line and Figure 9 The scattered points show that as D / t decreases, Bd increases accordingly, indicating that decreasing D / t can increase the saturated magnetic field strength of the magnetic field concentration unit and expand the linear sensing range of the magnetic signal sensor 100.

[0146] Based on this, configuring the magnetic field concentration unit to D / t≤40 can ensure the linear range of the magnetic field concentration unit, enabling the magnetic signal sensor 100 to have a wider range of signal sensing capabilities.

[0147] Specifically, when the magnetic field concentration unit is configured with D / t = 3, the saturated magnetic field strength Bsat of a single magnetic field concentration unit is approximately 7 times that of the saturated magnetic field strength Bsat when the magnetic field concentration unit is configured with D / t = 20.

[0148] In one specific embodiment, g ≤ 20t. The effect of this configuration is similar to that of the first embodiment described above.

[0149] In one specific embodiment, g ≤ 1 / 2D. This allows for a balance between wide-range linear sensing and high sensitivity.

[0150] In another embodiment, the thickness and size of the second magnetic field concentrator are configured.

[0151] The second magnetic field concentrating element 22 is disposed on the reference surface S0. The second magnetic field concentrating element 22 has a first thickness t relative to the reference surface S0.

[0152] The second magnetic field concentration unit 22 has a first size D in the third direction Y.

[0153] Optional, D / t≥1.

[0154] Optional, D / t≤40.

[0155] Furthermore, referring to both the first and second embodiments, the following is further referenced. Figure 8 As shown, when the magnetic field condensing unit is configured with D / t = 3, when g increases from 0.2t to 2t, the Bsz / Bsz0 value decreases from 1.36 to 1.06, a decrease of 0.3. When it continues to increase to 5t, the Bsz / Bsz0 value decreases to 1.02, a decrease of 0.04. When the magnetic field condensing unit is configured with D / t = 20, when g increases from 0.2t to 4t, the Bsz / Bsz0 value decreases from 1.56 to 1.21, a decrease of 0.35. When it continues to increase to 20t, the Bsz / Bsz0 value decreases to 1.02, a decrease of 0.19.

[0156] Therefore, the larger the value of D / t, the smaller the decrease in the value of Bsz / Bsz0 as g(t) increases. Thus, when g needs to be adjusted frequently, D / t can be configured to be larger to maintain the stability of sensitivity; when g does not change much, D / t can be configured to be larger to obtain higher sensitivity; for the same D / t, g can be configured to be as small as possible to obtain higher sensitivity; when D is configured as small as possible to obtain a wider linear range, g can be configured as small as possible to obtain higher sensitivity.

[0157] The following provides several embodiments of the magnetic signal sensor 100 of the present invention. These embodiments will be described in detail regarding the component structure or circuitry of the magnetic signal sensor 100, providing various optional technical solutions. All of the following embodiments can be applied to at least one of the first and second embodiments described above. The first and second embodiments described above can be combined to form a third embodiment; naturally, the following embodiments can also be applied to this third embodiment.

[0158] The first embodiment provided below does not necessarily correspond to the first embodiment of the aforementioned current detection device, but various embodiments can be combined with each other.

[0159] First Embodiment

[0160] In this embodiment, the first sensing unit 11 can be disposed on the side of the second direction Z or the opposite direction of the second direction Z of the magnetic field concentration unit. When describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0161] The first sensing unit 11 is disposed on the second direction Z side of the first magnetic field concentration unit 21, or the first sensing unit 11 is disposed on the opposite side of the second direction Z of the first magnetic field concentration unit 21.

[0162] When the second direction Z is defined as upward, the first sensing unit 11 can be positioned above or below the first magnetic field concentration unit 21.

[0163] The first sensing unit 11 is located on the side of the second direction Z or the opposite direction of the second direction Z, and it is not limited to the entire first sensing unit 11 being located at the corresponding position of the first magnetic field concentrating unit 21. The first sensing unit 11 is at least partially located on the side of the first magnetic field concentrating unit 21 in the second direction Z or the opposite direction of the second direction Z. The projection of the first sensing unit 11 along the second direction Z at least partially overlaps with the first magnetic field concentrating unit 21.

[0164] The first sensing unit 11 is used to sense a magnetic field signal parallel to the second direction Z to generate a first signal.

[0165] Combination Figure 7 The first magnetic field concentration unit 21 acts on the component of the signal magnetic field Bs along the first direction X, causing the signal magnetic field Bs to deflect and generate a magnetic field component Bsz parallel to the second direction Z. When the detection direction of the first sensing unit 11 is parallel to the second direction Z, it can sense the magnetic field component Bsz, thereby obtaining information about the signal magnetic field Bs and realizing the sensing of the magnetic signal.

[0166] The first direction X forms an angle with the second direction Z. The first sensing unit 11 can not only sense magnetic field signals parallel to its detection direction (second direction Z), but also, based on the first magnetic field concentration unit 21, can detect magnetic field signals in the first direction X, which is different from its detection direction, thereby realizing multi-directional sensing.

[0167] The first direction X is perpendicular to the second direction Z. The first sensing unit 11 can sense magnetic field signals in at least two mutually perpendicular directions.

[0168] The second direction Z is perpendicular to the reference plane S0. When the reference plane S0 is formed through the surface of the substrate 800, the second direction Z can be a direction perpendicular to the substrate 800. When the second direction Z is defined as upward, the first sensing unit 11 can be disposed above the substrate 800, below the substrate 800, or in the substrate 800.

[0169] The magnetic signal sensor 100 may further include an insulating layer 700, which may be disposed between the substrate 800 and the first magnetic field concentration unit 21. The first sensing unit 11 may be disposed on the side of the insulating layer 700 away from the first magnetic field concentration unit 21.

[0170] The signal magnetic field Bs is concentrated on the first side of the first magnetic field concentration unit 21; the signal magnetic field Bs is concentrated between the first magnetic field concentration unit 21 and the second magnetic field concentration unit 22; the signal magnetic field Bs diverges at the edge of the second magnetic field concentration unit 22 away from the first magnetic field concentration unit 21.

[0171] The first magnetic field concentrating unit 21 may have a first center, and the first magnetic field concentrating unit 21 is symmetrical about the first center. On a plane parallel to the reference plane S0, the first magnetic field concentrating unit 21 forms a two-dimensional centrally symmetrical shape.

[0172] The first magnetic field concentrating unit 21 has a first reference line, and the first magnetic field concentrating unit 21 is symmetrical about the first reference line. The first reference line is perpendicular to a first direction X. The first reference line may be parallel to a reference plane S0. On a plane parallel to the reference plane S0, the first magnetic field concentrating unit 21 forms a two-dimensional axisymmetric figure, and the axis of symmetry may be the first reference line. The first reference line may be parallel to a third direction Y.

[0173] Based on this, the magnetic field characteristics on the opposite side of the first direction X of the first magnetic field concentration unit 21 can be considered symmetrical and equal to the magnetic field characteristics on the side of the first direction X. The enhanced magnetic field concentration distribution at the interval due to the coupling effect between the first magnetic field concentration unit 21 and the second magnetic field concentration unit 22 can be reflected on the other side of the first magnetic field concentration unit 21. Accordingly, the first sensing unit 21 can obtain a stronger magnetic field component than a single magnetic field concentration unit, thereby improving the sensitivity of the magnetic signal sensor 100.

[0174] Furthermore, by configuring the magnetic field concentration unit as centrally symmetric or axisymmetric, the magnetic field concentration unit has the same hysteresis characteristics for different directions when the magnetic field component or signal magnetic field Bs is in other directions. This can significantly reduce inter-axis hysteresis and effectively increase the signal reproducibility, stability and output accuracy of the magnetic signal sensor.

[0175] The second magnetic field concentrating unit 22 may have a second center. The second magnetic field concentrating unit 22 may be symmetrical about the second center.

[0176] The second magnetic field concentrating unit 22 may have a second reference line. The second magnetic field concentrating unit 22 may be symmetrical about the second reference line.

[0177] The second reference line is perpendicular to the first direction X. The second reference line may be parallel to the reference plane S0. The second reference line may be parallel to the third direction Y.

[0178] The magnetic field concentration distribution phenomenon formed by the second magnetic field concentration unit 22 near the first magnetic field concentration unit 21 can be reflected on the other side of the second magnetic field concentration unit 22. When the second sensing unit 12 (described later) is provided on the other side, the second sensing unit 12 can obtain higher sensitivity.

[0179] The second magnetic field concentrating unit 22 can be positioned close to the first magnetic field concentrating unit 21 in a direction parallel to the first direction X. The second magnetic field concentrating unit 22 is positioned on the first direction X side of the first magnetic field concentrating unit 21. Magnetic field concentration occurs on the opposite side of the first direction X of the second magnetic field concentrating unit 22, which can be considered as an increase in the magnetic field strength on its first direction X side.

[0180] The first magnetic field concentration unit 21 and the second magnetic field concentration unit 22 can be symmetrical about a third center. In a two-dimensional plane parallel to the reference plane S0, the first magnetic field concentration unit 21 and the second magnetic field concentration unit are centrally symmetrically distributed.

[0181] The first magnetic field concentrating unit 21 and the second magnetic field concentrating unit 22 can be symmetrical about a third reference line. The third reference line is perpendicular to the first direction X. The third reference line can be parallel to the reference plane S0. The third reference line can be parallel to the third direction Y. In a two-dimensional plane parallel to the reference plane S0, the first magnetic field concentrating unit 21 and the second magnetic field concentrating unit 22 are axially symmetrically distributed, with the third reference line as the axis of symmetry.

[0182] Thus, the first magnetic field concentration unit 21 and the second magnetic field concentration unit 22 are close to each other to form a gap. The magnetic field distribution characteristics of the side of the first magnetic field concentration unit 21 away from the gap are symmetrical and equal to the magnetic field distribution characteristics of the side of the second magnetic field concentration unit 22 away from the gap. If the first sensing unit 11 and the second sensing unit 12 are respectively set at two locations, they can be compared with each other to generate a better output corresponding to the signal magnetic field Bs.

[0183] In one embodiment, the magnetic signal sensor 100 includes a second sensing unit (e.g., second sensing unit 12 as described below).

[0184] The second sensing unit is used to sense a magnetic field signal parallel to the second direction to generate a second signal.

[0185] The second sensing unit can obtain the magnetic field component of the corresponding signal magnetic field in the same or opposite direction as the first sensing unit 11 based on its positional relationship with the magnetic field concentration unit.

[0186] When the first sensing unit 11 and the second sensing unit are subjected to magnetic field components in the same direction, it is equivalent to amplifying the magnetic field strength in that direction and obtaining a more accurate signal; when the first sensing unit 11 and the second sensing unit are set in different positions, the gradient difference corresponding to the different positions can also be obtained accordingly.

[0187] When magnetic field components in opposite directions are applied to the first sensing unit 11 and the second sensing unit, the influence of the uniform environmental magnetic field can be eliminated based on the difference between the two, and a more accurate sensing signal can be obtained.

[0188] The first sensing unit 11 can be disposed on the opposite side of the second direction Z of the first magnetic field concentration unit 21. The first sensing unit 11 can be used to sense magnetic field signals parallel to the second direction Z to generate a first signal.

[0189] The second sensing unit can be disposed close to the second side of the first magnetic field concentrating unit 21. The first side of the first magnetic field concentrating unit 21 can be the side opposite to the first direction X of the first magnetic field concentrating unit 21. The second side of the first magnetic field concentrating unit 21 can be the side of the first direction X of the first magnetic field concentrating unit 21.

[0190] When the first direction X is defined as right, the first sensing unit 11 and the second sensing unit can be respectively disposed on the left and right sides of the first magnetic field concentration unit 21. The magnetic field components obtained by the first sensing unit 11 and the second sensing unit are in opposite directions, which can be compared with each other to generate a sensing output, and can also be used to eliminate interference from uniform environmental magnetic fields.

[0191] The distances between the first sensing unit 11 and the second sensing unit and the first center of the first magnetic field concentrating unit 21 can be equal. The distances between the first sensing unit 11 and the second sensing unit and the first reference line of the first magnetic field concentrating unit 21 can be equal. The first sensing unit 11 and the second sensing unit can be symmetrical with respect to the first center. The first sensing unit 11 and the second sensing unit can be symmetrical with respect to the first reference line.

[0192] The second sensing unit can be disposed on the opposite side of the second direction Z of the first magnetic field concentration unit 21. When the second direction Z is defined as upward, both the first sensing unit 11 and the second sensing unit can be disposed below the first magnetic field concentration unit 21.

[0193] The second sensing unit can be positioned close to the third side of the second magnetic field concentrating unit 22. The third side of the second magnetic field concentrating unit 22 can be a side on the first direction X side of the second magnetic field concentrating unit 22, or a side on the opposite side of the first direction X.

[0194] When the first direction X is defined as right, the second sensing unit can be located on the right or left side of the second magnetic field concentration unit 21.

[0195] The third side of the second magnetic field concentrating unit 22 can also be the side of the second magnetic field concentrating unit 22 away from the first magnetic field concentrating unit 21. When the first magnetic field concentrating unit 21 is located on the opposite side of the first direction X of the second magnetic field concentrating unit 22, the third side is the side of the second magnetic field concentrating unit 22 on the first direction X side.

[0196] The first side of the first magnetic field concentration unit 21 can be the side opposite to the first direction X of the first magnetic field concentration unit 21.

[0197] When the third side is on the side of the first direction X, the magnetic field components obtained by the first sensing unit 11 and the second sensing unit are in opposite directions. When the third side is on the side opposite to the first direction X, the magnetic field components obtained by the first sensing unit 11 and the second sensing unit are in the same direction.

[0198] The distances of the first sensing unit 11 and the second sensing unit from the third center can be equal. The distances of the first sensing unit 11 and the second sensing unit from the third reference line can be equal. The first sensing unit 11 and the second sensing unit can be symmetrical with respect to the third center. The first sensing unit 11 and the second sensing unit can be symmetrical with respect to the third reference line.

[0199] The second sensing unit can be disposed on the opposite side of the second direction Z of the second magnetic field concentration unit 22. When the second direction Z is defined as upward, the second sensing unit can be disposed below the second magnetic field concentration unit 22.

[0200] The sensing unit provided by the present invention can be configured according to any of the following technical solutions. For the sake of simplicity, the following description will focus on the first sensing unit 11.

[0201] The first sensing unit 11 may include a Hall element.

[0202] The first sensing unit 11 may be composed of one or more Hall elements. The Hall elements operate based on the Hall effect. In some embodiments, the first sensing unit 11 may also include a magnetoresistive element or other components for detecting magnetic fields.

[0203] The first sensing unit 11 may include a Hall element.

[0204] The detection direction of this Hall element can be the second direction Z. This Hall element can be used to detect the magnetic field component of the signal magnetic field Bs along the second direction Z or in the opposite direction of the second direction Z.

[0205] The Hall element may include a first terminal e1, a second terminal e2, a third terminal e3, and a fourth terminal e4. The first terminal e1 can be used to couple to a power supply terminal, the second terminal e2 can be used to couple to a ground terminal, and the third terminal e3 and the fourth terminal e4 can be used to generate a first signal. The first signal may be the difference between the voltage value at the third terminal e3 and the voltage value at the fourth terminal e4. The first signal is positively correlated with the magnetic field strength of the magnetic field component of the signal magnetic field in the second direction Z.

[0206] When the magnetic field direction of the signal magnetic field Bs at the Hall unit is the second direction Z, if the first terminal e1 is coupled to the power supply terminal and the second terminal e2 is coupled to the ground terminal, then the third terminal e3 generates a high-level output and the fourth terminal e4 generates a low-level output. The voltage value formed is related to the magnetic field component of the signal magnetic field Bs. Therefore, the Hall unit can be used to detect the signal magnetic field.

[0207] In the various embodiments of Hall effect cells provided below, the signals and effects generated by the Hall effect cells based on their connection methods can all refer to this embodiment.

[0208] like Figure 11 As shown, the first sensing unit 11 may include a first Hall unit H1 and a second Hall unit H2.

[0209] The first terminal e11 of the first Hall unit H1 is coupled to the power supply terminal Vd, and the second terminal e12 of the first Hall unit H1 is coupled to the ground terminal GND. The first terminal e21 of the second Hall unit H2 is coupled to the power supply terminal Vd, the second terminal e22 of the second Hall unit H2 is coupled to the ground terminal GND, the third terminal e23 of the second Hall unit H2 is coupled to the third terminal e13 of the first Hall unit H1, and the fourth terminal e24 of the second Hall unit H2 is coupled to the fourth terminal e14 of the first Hall unit H1.

[0210] The third terminal e13 of the first Hall unit H1 and the third terminal e23 of the second Hall unit H2 are coupled to form a first output node, used to generate output V1. The fourth terminal e14 of the first Hall unit H1 and the fourth terminal e24 of the second Hall unit H2 are coupled to form a second output node, used to generate output V2. The first and second output nodes are used to generate the output of a first signal. The first signal is positively correlated with the magnetic field strength of the magnetic field component Bsz.

[0211] The first Hall unit H1 and the second Hall unit H2 are coupled in parallel.

[0212] The first sensing unit 11 may also include, for example, four or more Hall effect units.

[0213] The first end e11 and the second end e12 of the first Hall unit H1 can be set along the first direction X.

[0214] The third terminal e13 and the fourth terminal e14 of the first Hall unit H1 are set along the third direction Y.

[0215] The first end e21 of the second Hall unit H2 and the second end e22 of the second Hall unit H2 are set along the third direction Y.

[0216] The third end e23 of the second Hall unit H2 and the fourth end e24 of the second Hall unit H2 are arranged along the first direction X.

[0217] When the magnetic signal sensor 100 includes multiple sensing units, if the magnetic field components obtained by the multiple sensing units are in opposite directions, the multiple sensing units provided by the present invention can also be configured according to any of the following technical solutions.

[0218] like Figure 13 Combination Figure 12 As shown, the magnetic signal sensor 100 may include a first sensing unit 11 and a second sensing unit 12 (which may be implemented as the aforementioned second sensing unit). The first sensing unit 11 includes a third Hall unit H3, and the second sensing unit 12 includes a fourth Hall unit H4.

[0219] The first terminal e31 of the third Hall unit H3 is coupled to the power supply terminal Vd, and the second terminal e32 of the third Hall unit H3 is coupled to the ground terminal GND. The first terminal e41 of the fourth Hall unit H4 is coupled to the power supply terminal Vd, the second terminal e42 of the fourth Hall unit H4 is coupled to the ground terminal GND, the third terminal e43 of the fourth Hall unit H4 is coupled to the fourth terminal e34 of the third Hall unit H3, and the fourth terminal e44 of the fourth Hall unit H4 is coupled to the third terminal e33 of the third Hall unit H3.

[0220] The second sensing unit 12 can be disposed near the side of the first magnetic field concentrating unit 21 away from the first sensing unit 12 in the first direction X, or near the side of the second magnetic field concentrating unit 22 away from the first sensing unit 12 in the first direction X, or near the side of the third magnetic field concentrating unit 23 described later away from the first sensing unit 12 in the first direction X.

[0221] Based on this, the magnetic field component Bsz of the corresponding signal magnetic field Bs obtained by the third Hall unit H3 included in the first sensing unit 11 is along the second direction Z, and the magnetic field component Bsz' obtained by the fourth Hall unit H4 included in the second sensing unit 12 is along the opposite direction of the second direction Z.

[0222] Based on the above coupling relationship, the high potential ends of the third Hall unit H3 and the fourth Hall unit H4 are coupled to form output Va, and the low potential ends of the two are coupled to form output Vb. Va and Vb are positively correlated with the intensity difference of the magnetic field components at the first sensing unit 11 and the second sensing unit 12, and do not generate output for uniform ambient magnetic fields, thus having excellent anti-interference ability.

[0223] like Figure 14 Combination Figure 12 As shown, the magnetic signal sensor 100 may include a first sensing unit 11 and a second sensing unit 12 (which may be implemented as the aforementioned second sensing unit). The first sensing unit 11 includes a third Hall unit H3, and the second sensing unit 12 includes a fourth Hall unit H4.

[0224] The magnetic signal sensor 100 may include a first amplifier 61, a second amplifier 62, and a processing unit 500.

[0225] The first terminal e31 of the third Hall unit H3 is coupled to the power supply terminal Vd, and the second terminal e32 of the third Hall unit H3 is coupled to the ground terminal GND. The third terminal e33 of the third Hall unit H3 is coupled to the first input terminal of the first amplifier 61, and the fourth terminal e34 of the third Hall unit H3 is coupled to the second input terminal of the first amplifier 61.

[0226] The first terminal e41 of the fourth Hall unit H4 is coupled to the power supply terminal Vd, the second terminal e42 of the fourth Hall unit H4 is coupled to the ground terminal GND, the third terminal e43 of the fourth Hall unit H4 is coupled to the first input terminal of the second amplifier 62, and the fourth terminal e44 of the fourth Hall unit H4 is coupled to the second input terminal of the second amplifier 62.

[0227] The output terminals of the first amplifier 61 and the second amplifier 62 are coupled to the input terminals of the operational unit 500.

[0228] The magnetic field component Bsz of the corresponding signal magnetic field Bs obtained by the third Hall unit H3 included in the first sensing unit 11 is along the second direction Z, and the magnetic field component Bsz' obtained by the fourth Hall unit H4 included in the second sensing unit 12 is along the opposite direction of the second direction Z.

[0229] Based on the above coupling relationship, the arithmetic unit 500 adds the outputs of the first amplifier 61 and the second amplifier 62 to generate an output that is positively correlated with the sum of the magnetic field strengths of the magnetic field components at the first sensing unit 11 and the second sensing unit 12, thereby achieving common-mode output; the arithmetic unit 500 subtracts the outputs of the first amplifier 61 and the second amplifier 62 to generate an output that is positively correlated with the difference in the magnetic field strengths of the magnetic field components at the first sensing unit 11 and the second sensing unit 12, thereby achieving differential output.

[0230] The arithmetic unit 500 generates outputs Va and Vb, which can be the common-mode output and the differential output, respectively. Both outputs are positively correlated with the strength of the signal magnetic field Bs.

[0231] The first sensing unit 11 and the second sensing unit 12 can also be formed by coupling two or more Hall units.

[0232] like Figure 4 The second magnetic field concentrating unit 22 can be disposed on the first direction X side of the first magnetic field concentrating unit 21. The second magnetic field concentrating unit 22 can also be disposed on the opposite side of the first direction X of the first magnetic field concentrating unit 21.

[0233] Located on the side opposite to the first direction X, it can be the positive direction of the first direction X or the oblique direction of the first direction X.

[0234] For example, the second magnetic field concentrating unit 22 is disposed on the opposite side of the first magnetic field concentrating unit 22 in the first direction X and the third direction Y. When the first direction X is defined as right and the third direction Y as up, the second magnetic field concentrating unit 22 can be disposed to the lower right of the first magnetic field concentrating unit 21.

[0235] In addition, the second magnetic field concentration unit 22 can also be disposed on one side of the first magnetic field concentration unit 22 in the first direction X and the second direction Z.

[0236] The first direction X can be perpendicular to the third direction Y.

[0237] The second direction Z can be perpendicular to the third direction Y.

[0238] The third direction Y can be parallel to the reference plane S0. The reference plane S0 can be parallel to both the first direction X and the third direction Y.

[0239] The second direction Z can be perpendicular to both the first direction X and the third direction Y. The second direction Z can also be perpendicular to the reference plane S0.

[0240] for Figure 4 In the illustrated embodiment, the second magnetic field concentrating unit 22 is disposed directly to the right of the first magnetic field concentrating unit 21, and the cross-sectional line R1 extends along the first direction X. Based on the cross-sectional line R1, it can be obtained that... Figure 7 The sectional view shown.

[0241] Second Embodiment

[0242] In this embodiment, the first sensing unit 11 can be disposed on the side of the second direction Z or the opposite direction of the second direction Z of the magnetic field concentration unit. In a preferred embodiment, the magnetic signal sensor 100 may include three magnetic field concentration units, which may be arranged in an array and / or centrally symmetrically. When describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment and other technical solutions can be combined or explained together.

[0243] The second magnetic field concentrating unit 22 is disposed on the side of the first magnetic field concentrating unit 21 in the first direction X or the opposite direction of the first direction X. When the first direction X is defined as right, the second magnetic field concentrating unit 22 can be located directly to the right of the first magnetic field concentrating unit 21, or it can be located diagonally above or below the right side, or it can be located on the left side or diagonally above or below the left side.

[0244] for Figure 5 In the illustrated embodiment, the second magnetic field concentrating unit 22 is disposed on the opposite side of the first magnetic field concentrating unit 21 in the first direction X and the third direction Y, and the cross-sectional line R1 extends as a broken line along the opposite direction of the first direction X and the third direction Y. Based on the cross-sectional line R1, it can be obtained that... Figure 7 The sectional view shown.

[0245] The magnetic signal sensor 100 also includes a third magnetic field concentration unit 23.

[0246] The third magnetic field concentration unit 23 can be set on the reference plane S0.

[0247] The third magnetic field concentration unit 23 is positioned close to the first magnetic field concentration unit 21.

[0248] The reference plane S0 is parallel to the first direction X, and the third magnetic field concentration unit 23 can be disposed on the first direction X side of the first magnetic field concentration unit 21. The reference plane S0 is parallel to the third direction Y, and the third magnetic field concentration unit 23 can be disposed on the opposite side of the third direction Y of the first magnetic field concentration unit 21. The third magnetic field concentration unit 23 can be disposed on the opposite side of both the first direction and the third direction Y of the first magnetic field concentration unit 21.

[0249] The third magnetic field concentrator 23 and the first magnetic field concentrator 21 may have a first interval g in a direction parallel to the reference plane S0. The third magnetic field concentrator 23 may be magnetically coupled to the first magnetic field concentrator 21 in a manner similar to that of the second magnetic field concentrator 22.

[0250] In addition to Figure 5The third magnetic field concentrating unit 23 and the second magnetic field concentrating unit 22 can be positioned outside the first magnetic field concentrating unit 21 in the first direction X. Alternatively, they can be positioned on either side of the first magnetic field concentrating unit 21. For example, the third magnetic field concentrating unit 23 can be positioned on the opposite side of the first magnetic field concentrating unit 21 in the first direction X. When the first direction X is defined as right, the third magnetic field concentrating unit 23 can be positioned to the left of the first magnetic field concentrating unit 21, and the second magnetic field concentrating unit 22 can be positioned to the right of the first magnetic field concentrating unit 21.

[0251] The third magnetic field concentrator 23 can be located on the Y-side of the second magnetic field concentrator 22. The three magnetic field concentrators are arranged in a triangular configuration. Alternatively, the third magnetic field concentrator 23 and the second magnetic field concentrator 22 can be configured to have a first interval g in a direction parallel to the reference plane S0.

[0252] The third magnetic field concentration unit 23 is positioned close to the first magnetic field concentration unit 21.

[0253] The magnetic signal sensor 100 may further include a second sensing unit. The second sensing unit may be positioned near the fourth side of the third magnetic field concentration unit 23. The fourth side is either the side of the third magnetic field concentration unit 23 along the first direction X, or the side opposite to the first direction X. When the first direction X is defined as right, the second sensing unit may be positioned near the left side or the right side of the third magnetic field concentration unit 23. If the first sensing unit 11 is positioned near the left side of the first magnetic field concentration unit 21, and the second sensing unit is positioned near the left side of the third magnetic field concentration unit 23, then the magnetic field components obtained by both units will have the same direction. If the second sensing unit is positioned near the right side of the third magnetic field concentration unit 23, then the magnetic field components obtained by both units will have opposite directions.

[0254] The second sensing unit can be located on the second direction Z side of the third magnetic field concentration unit 23, or on the opposite side of the second direction Z.

[0255] The third magnetic field concentration unit 23 may also have a center, and the third magnetic field concentration unit 23 is symmetrical about the center.

[0256] The third magnetic field concentration unit 23 may also have a reference line, and the third magnetic field concentration unit 23 may be symmetrical about the reference line, which may be perpendicular to the first direction X.

[0257] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can be symmetrical about the third center.

[0258] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can be arranged in an array.

[0259] Adjacent magnetic field concentration units in the first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 may each have a first interval g in a direction parallel to the reference plane S0.

[0260] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can all have a first thickness t.

[0261] The first magnetic field concentrating unit 21, the second magnetic field concentrating unit 22, and the third magnetic field concentrating unit 23 can all have a first size D in the third direction Y.

[0262] Third Embodiment

[0263] In this embodiment, the first sensing unit 11 can be disposed on the side of the second direction Z or the opposite direction of the second direction Z of the magnetic field concentration unit. In a preferred embodiment, the magnetic signal sensor 100 may include three magnetic field concentration units, which may be arranged at intervals in a specific direction. When describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment and other technical solutions can be combined or explained together.

[0264] The second magnetic field concentrating unit 22 is disposed on the side of the first magnetic field concentrating unit 21 in the first direction X or the opposite direction of the first direction X. When the first direction X is defined as right, the second magnetic field concentrating unit 22 can be located directly to the right of the first magnetic field concentrating unit 21.

[0265] like Figure 12 The magnetic signal sensor 100 also includes a third magnetic field concentration unit 23.

[0266] The third magnetic field concentration unit 23 can be set on the reference plane S0.

[0267] The third magnetic field concentration unit 23 is positioned close to the second magnetic field concentration unit 22.

[0268] The reference plane S0 is parallel to the first direction X, and the third magnetic field concentration unit 23 can be set on the first direction X side of the second magnetic field concentration unit 22.

[0269] The third magnetic field concentration unit 23 and the first magnetic field concentration unit 21 may have a first interval g in a direction parallel to the reference plane S0.

[0270] The first magnetic field concentrator 21, the second magnetic field concentrator 22, and the third magnetic field concentrator 23 can be arranged at intervals in the first direction X. The first magnetic field concentrator 21 is magnetically coupled to the second magnetic field concentrator 22, and the second magnetic field concentrator 22 is magnetically coupled to the third magnetic field concentrator 23.

[0271] The third magnetic field concentration unit 23 is positioned close to the second magnetic field concentration unit 22.

[0272] The magnetic signal sensor 100 may further include a second sensing unit 12. The second sensing unit 12 may be disposed near the fourth side of the third magnetic field concentration unit 23. The fourth side is either the side of the third magnetic field concentration unit 23 in the first direction X, or the side in the opposite direction of the first direction X. If the first sensing unit 11 is near the left side of the first magnetic field concentration unit 21, and the second sensing unit 12 is near the left side of the third magnetic field concentration unit 23, then the magnetic field components obtained by both units will have the same direction. If the second sensing unit 12 is near the right side of the third magnetic field concentration unit 23, then the magnetic field components obtained by both units will have opposite directions.

[0273] The second sensing unit 12 can be disposed on the second direction Z side of the third magnetic field concentration unit 23, or on the opposite side of the second direction Z.

[0274] The third magnetic field concentration unit 23 can be configured as centrosymmetric or axially symmetric.

[0275] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can be arranged centrally symmetrically or axially symmetrically. Taking axial symmetry as an example, the first magnetic field concentration unit 21 and the third magnetic field concentration unit 23 can be symmetrical with respect to the second magnetic field concentration unit 22.

[0276] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can be arranged in an array.

[0277] Adjacent magnetic field concentration units in the first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 may each have a first interval g in a direction parallel to the reference plane S0.

[0278] The first magnetic field concentration unit 21, the second magnetic field concentration unit 22, and the third magnetic field concentration unit 23 can all have a first thickness t.

[0279] The first magnetic field concentrating unit 21, the second magnetic field concentrating unit 22, and the third magnetic field concentrating unit 23 can all have a first size D in the third direction Y.

[0280] Fourth embodiment

[0281] In this embodiment, the first sensing unit 11 can be disposed on the side opposite to the third direction Y of the magnetic field concentration unit. In a preferred embodiment, the magnetic signal sensor 100 may include three magnetic field concentration units, which may be arranged in an array and / or centrally symmetrically. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0282] like Figure 15 The first sensing unit 11 is disposed on the side opposite to the third direction Y of the first magnetic field concentration unit 21, or the first sensing unit 11 is disposed on the third direction Y side of the first magnetic field concentration unit 21.

[0283] When the third direction Y is defined as rear, the first sensing unit 11 can be located behind or in front of the first magnetic field concentration unit 21.

[0284] The first sensing unit 11 is positioned on the side of the third direction Y or the opposite direction of the third direction Y, and is not limited to being entirely located at the corresponding position of the first magnetic field concentration unit 21. The first sensing unit 11 is at least partially located on the side of the first magnetic field concentration unit 21 of the third direction Y or the opposite direction of the third direction Y. The projection of the first sensing unit 11 along the third direction Y at least partially overlaps with the first magnetic field concentration unit 21.

[0285] The first sensing unit 11 is used to sense a magnetic field signal parallel to the third direction Y to generate a first signal.

[0286] The first magnetic field concentrating unit 21 acts on the component of the signal magnetic field Bs along the first direction X, causing the signal magnetic field Bs to deflect and generate magnetic field components Bsy and Bsy' parallel to the third direction Y. When the detection direction of the first sensing unit 11 is parallel to the third direction Y, it can sense the magnetic field components Bsy and Bsy', thereby obtaining information about the signal magnetic field Bs and realizing the sensing of the magnetic signal.

[0287] The first direction X forms an angle with the third direction Y. The first sensing unit 11 can not only sense magnetic field signals parallel to its detection direction (third direction Y), but also, based on the first magnetic field concentration unit 21, can detect magnetic field signals in the first direction X, which is different from its detection direction, thereby realizing multi-directional sensing.

[0288] The first direction X is perpendicular to the third direction Y. The first sensing unit 11 can sense magnetic field signals in at least two mutually perpendicular directions.

[0289] The third direction Z is parallel to the reference plane S0. When the reference plane S0 is formed through the surface of the substrate 800, the third direction Y can be a direction parallel to the substrate 800.

[0290] The signal magnetic field Bs is concentrated on the first side of the first magnetic field concentration unit 21; the signal magnetic field Bs is concentrated between the first magnetic field concentration unit 21 and the second magnetic field concentration unit 22; the signal magnetic field Bs diverges at the edge of the second magnetic field concentration unit 22 away from the first magnetic field concentration unit 21.

[0291] The positional relationship between the second magnetic field concentration unit 22 and the first magnetic field concentration unit 21 can be configured with reference to the second embodiment described above.

[0292] The magnetic signal sensor 100 includes a second sensing unit 12.

[0293] The second sensing unit 12 is used to sense a magnetic field signal parallel to the third direction Y to generate a second signal.

[0294] The second sensing unit 12 can obtain the magnetic field component of the corresponding signal magnetic field in the same or opposite direction as the first sensing unit 11 based on its positional relationship with the magnetic field concentration unit.

[0295] The first sensing unit 11 can be disposed on the third Y-side of the first magnetic field concentration unit 21. The first sensing unit 11 can be used to sense magnetic field signals parallel to the third Y-side to generate a first signal.

[0296] The second sensing unit can be disposed close to the first side of the first magnetic field concentrating unit 21. The first side of the first magnetic field concentrating unit 21 can be the side opposite to the first direction X of the first magnetic field concentrating unit 21.

[0297] The second sensing unit 12 can be located on the opposite side of the third direction Y of the first magnetic field concentration unit 21.

[0298] When the first direction X is defined as right and the third direction Y as rear, the first sensing unit 11 can be positioned to the left rear of the first magnetic field concentration unit 21, and the second sensing unit 12 can be positioned to the left front of the first magnetic field concentration unit 21. The magnetic field components obtained by the first sensing unit 11 and the second sensing unit 12 are in opposite directions, and can be compared with each other to generate a sensing output. They can also be used to eliminate interference from uniform environmental magnetic fields.

[0299] The distances between the first sensing unit 11 and the second sensing unit 12 and the first center of the first magnetic field concentrating unit 21 can be equal. The distances between the first sensing unit 11 and the second sensing unit 12 and the first reference line of the first magnetic field concentrating unit 21 can be equal. The first sensing unit 11 and the second sensing unit 12 can be symmetrical with respect to the first center. The first sensing unit 11 and the second sensing unit 12 can be symmetrical with respect to the first reference line.

[0300] The first sensing unit 11 can be disposed on the reference surface S0. The second sensing unit 12 can be disposed on the reference surface S0. When the second direction Z is defined as upward, the first sensing unit 11 can also be disposed above or below the reference surface S0, and the second sensing unit 12 can also be disposed above or below the reference surface S0.

[0301] The magnetic signal sensor 100 also includes a third magnetic field concentration unit 23.

[0302] The third magnetic field concentration unit 23, and the positional relationship between the three magnetic field concentration units, can be configured with reference to the second embodiment described above. The signal magnetic field Bs diverges at the edge of the third magnetic field concentration unit 23 away from the first magnetic field concentration unit 21.

[0303] When a plurality of magnetic field concentration units in the magnetic signal sensor 100 are symmetrical about a central point, the first sensing unit 11 and the second sensing unit 12 can be symmetrical about the central point.

[0304] When the first sensing unit 11 and the second sensing unit 12 are symmetrical about a reference line axis, the first sensing unit 11 and the second sensing unit 12 can be symmetrical with respect to the reference line axis.

[0305] The difference between the outputs of the first sensing unit 11 and the second sensing unit 12 can be positively correlated with the magnetic field strength of the signal magnetic field Bs.

[0306] The magnetic signal sensor 100 obtained according to this embodiment is not affected by the uniform magnetic field in the third direction Y and the second direction Z.

[0307] The first sensing unit 11 and the second sensing unit 12 are used to sense magnetic field signals parallel to the third direction Y. The Hall unit included in the first sensing unit 11 and the second sensing unit 12 can be configured as a horizontal Hall.

[0308] The following will combine Figures 16 to 18 as well as Figures 1 to 3 The fifth to tenth embodiments of the magnetic signal sensor of the present invention are described.

[0309] In these embodiments, the magnetic signal sensor 100 includes N magnetic field concentration units, where N is an integer greater than or equal to 2.

[0310] N magnetic field concentration units are arranged in an array. Specifically, the N magnetic field concentration units can be arranged in an array on a two-dimensional plane parallel to the reference plane S0. The array configuration can be... Figure 16 The single-direction interval setting shown can also be... Figures 1 to 3 or Figures 17 to 18 The matrix form shown.

[0311] In N magnetic field concentration units, adjacent magnetic field concentration units have a first interval g. Each pair of adjacent magnetic field concentration units has a first interval g. This ensures that the magnetic coupling at adjacent magnetic field concentration units is uniform.

[0312] All N magnetic field condensing units have a first thickness t. All N magnetic field condensing units also have a first dimension D in a third direction. This maintains relatively uniform characteristics of the magnetic field condensing units and reduces fabrication difficulty.

[0313] Fifth Embodiment

[0314] In this embodiment, the sensing units can be configured to be spaced apart in a specific direction. In a preferred embodiment, the different sensing units have different sizes. When describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0315] like Figure 16 The second magnetic field concentration unit 22 is located on the opposite side of the first direction X of the first magnetic field concentration unit 21.

[0316] The first side of the first magnetic field concentration unit 21 is the side of the first magnetic field concentration unit 21 in the first direction X. When the first direction X is defined as right, the first sensing unit 11 can be set close to the right side of the first magnetic field concentration unit 21.

[0317] The magnetic signal sensor 100 includes a sixth magnetic field concentration unit 26 disposed on the opposite side of the first direction X of the second magnetic field concentration unit 22.

[0318] The magnetic signal sensor 100 includes a seventh magnetic field concentration unit 27 disposed on the opposite side of the first direction X of the sixth magnetic field concentration unit 26.

[0319] The first magnetic field concentration unit 21 has a first dimension D in a direction perpendicular to the first direction X.

[0320] The second magnetic field concentration unit 22 has a second dimension D2 in a direction perpendicular to the first direction X.

[0321] Optional, D2>D.

[0322] The sixth magnetic field concentration unit 26 has a sixth dimension D6 in a direction perpendicular to the first direction X.

[0323] Optional, D6>D2. Optional, D6>D.

[0324] The seventh magnetic field concentration unit 27 has a seventh dimension D7 in a direction perpendicular to the first direction X.

[0325] Optional, D7>D6. Optional, D7>D2. Optional, D7>D.

[0326] The first magnetic field concentrator 21, the second magnetic field concentrator 22, the sixth magnetic field concentrator 26, and the seventh magnetic field concentrator 27 can be of any shape. The dimensions of the four magnetic field concentrators in the first direction X can be the same or different.

[0327] The spacing between the four magnetic field concentration units can be the same or different. For example, adjacent magnetic field concentration units in the four magnetic field concentration elements can all have a first spacing g.

[0328] Thus, the specific arrangement of the magnetic field concentration units forms a magnetic interaction coupling between adjacent units, providing a magnetic signal sensor with both high sensitivity and a large measurement range.

[0329] Sixth Embodiment

[0330] In this embodiment, the magnetic field concentration units can be configured in an array. In a preferred embodiment, two sensing units can be provided, one on one side of the first direction X and the other on the opposite side of the first direction X, respectively. More specifically, the sensing units can be configured as hexagons. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0331] like Figure 17 The magnetic signal sensor 100 includes a second sensing unit 12.

[0332] The second sensing unit 12 is used to sense a magnetic field signal parallel to the third direction Y to generate a second signal.

[0333] The second sensing unit 12 can obtain the magnetic field component of the corresponding signal magnetic field in the same or opposite direction as the first sensing unit 11 based on its positional relationship with the magnetic field concentration unit.

[0334] The magnetic signal sensor 100 may include N magnetic field concentration units arranged in an array.

[0335] The magnetic signal sensor 100 includes a fourth magnetic field concentration unit 24. The fourth magnetic field concentration unit 24 may be contained in N magnetic field concentration units.

[0336] The fourth magnetic field concentration unit 24 can be a magnetic field concentration unit located on the first direction X side among N magnetic field concentration units.

[0337] The fourth magnetic field concentration unit 24 has a fifth side. The fifth side may be the side of the fourth magnetic field concentration unit 24 in the first direction X.

[0338] The second sensing unit 12 can be positioned close to the fifth side of the fourth magnetic field concentration unit 24.

[0339] When the magnetic field component of the signal magnetic field Bs is along the first direction X, the divergent magnetic field component can be obtained at the second sensing unit 12.

[0340] The second sensing unit 12 can be disposed on the opposite side of the second direction Z of the fourth magnetic field concentration unit 24. At this time, referencing... Figure 12 Through the action of the fourth magnetic field concentration unit 24, the second sensing unit 12 can obtain the magnetic field component in the opposite direction of the second direction Z.

[0341] The first magnetic field concentration unit 21 can be contained in N magnetic field concentration units.

[0342] The first magnetic field concentration unit 21 can be the magnetic field concentration unit located on the opposite side of the first direction X among N magnetic field concentration units.

[0343] The first side of the first magnetic field concentrating unit 21 is the side opposite to the first direction X of the first magnetic field concentrating unit 21. The first sensing unit 11 is disposed close to the first side.

[0344] When the magnetic field component of the signal magnetic field Bs is along the first direction X, the first sensing unit 11 can obtain the concentrated magnetic field component.

[0345] The first sensing unit 11 can be disposed on the opposite side of the second direction Z of the first magnetic field concentration unit 21. At this time, referring to... Figure 12 Through the action of the first magnetic field concentration unit 21, the first sensing unit 11 can obtain the magnetic field component along the second direction Z.

[0346] Unlike the previous embodiments where the magnetic field concentrators were configured with rectangular or square cross-sections, in this embodiment, the magnetic field concentrators can be hexagonal, preferably regular hexagonal, on a two-dimensional plane parallel to the reference plane S0. An array of N magnetic field concentrators can be arranged to form... Figure 17 The honeycomb arrangement shown is also known as an interleaved arrangement.

[0347] Seventh Embodiment

[0348] like Figure 1 As shown, the difference between this embodiment and the sixth embodiment is that the magnetic field concentration unit can be configured as a circle in a two-dimensional plane parallel to the reference plane S0.

[0349] In the sixth and seventh embodiments described above, the sensing units can all be based on... Figure 13 , Figure 14The illustrated embodiment is used to implement this. In addition, other technical solutions with the following configurations (e.g., Figure 3 The illustrated embodiment can also be adapted to... Figure 13 , Figure 14 The embodiments shown are implemented as described above, and the following configurations can also be implemented as a separate embodiment of the present invention.

[0350] The magnetic signal sensor 100 may include M magnetic field concentration units arranged sequentially along a first direction X. M ≥ 2. M ≤ N.

[0351] The first magnetic field concentration unit 21 is the magnetic field concentration unit located on the opposite side of the first direction X among the M magnetic field concentration units.

[0352] A second sensing unit 12 is provided at the magnetic field concentration unit located on the first direction X side among the M magnetic field concentration units (for example, the fourth magnetic field concentration unit 24).

[0353] The first sensing unit 11 includes a third Hall unit H3.

[0354] The second sensing unit 12 includes a fourth Hall unit H4.

[0355] Eighth embodiment

[0356] In this embodiment, the magnetic field concentrating units can be configured in an array. In a preferred embodiment, two sensing units can be provided, and the magnetic field concentrating units can be divided into two groups, with the two sensing units respectively disposed in the two groups of magnetic field concentrating units. More specifically, one sensing unit can be disposed at the magnetic field concentrating element on the opposite side of the first direction X in the magnetic field concentrating element group located on the side of the first direction X, and the other sensing unit can be disposed at the magnetic field concentrating element on the first direction X in the magnetic field concentrating element group located on the opposite side of the first direction X. This is equivalent to the two sensing units being disposed close to each other. In describing this embodiment, parts similar to other technical solutions will not be repeated, but this embodiment can be combined with or explained in conjunction with other technical solutions.

[0357] like Figure 18 The magnetic signal sensor includes a first magnetic field concentration unit group 101 and a second magnetic field concentration unit group 102.

[0358] N magnetic field concentration units can be divided into two magnetic field concentration unit groups. The two magnetic field concentration unit groups may contain an equal or unequal number of magnetic field concentration units. If the number is equal, the first magnetic field concentration unit group 101 and the second magnetic field concentration unit group 102 may each contain N / 2 magnetic field concentration units.

[0359] The first magnetic field concentration unit group 101 includes the first magnetic field concentration unit 21.

[0360] The first magnetic field concentration unit 21 can be a magnetic field concentration unit located on the opposite side of the first direction X in the first magnetic field concentration unit group 101.

[0361] The second magnetic field concentration unit group 101 includes the fifth magnetic field concentration unit 25.

[0362] The fifth magnetic field concentration unit 25 is the magnetic field concentration unit located on the first direction X side in the second magnetic field concentration unit group 101.

[0363] The first side of the first magnetic field concentrating unit 21 may be the side opposite to the first direction X of the first magnetic field concentrating unit 21. The first sensing unit 11 is disposed close to the first side.

[0364] When the magnetic field component of the signal magnetic field Bs is along the first direction X, the first sensing unit 11 obtains the concentrated magnetic field component. When the first sensing unit 11 is disposed on the opposite side of the second direction Z of the first magnetic field concentration unit 21, the first sensing unit 11 obtains the magnetic field component along the second direction Z.

[0365] The second sensing unit 12 is positioned near the sixth side of the fifth magnetic field concentration unit 25.

[0366] The sixth side is the side of the fifth magnetic field concentration unit 25 in the first direction X.

[0367] When the magnetic field component of the signal magnetic field Bs is along the first direction X, the second sensing unit 12 obtains the divergent magnetic field component. When the second sensing unit 12 is disposed on the opposite side of the second direction Z of the fifth magnetic field concentration unit 25, the second sensing unit 12 obtains the magnetic field component along the opposite direction of the second direction Z.

[0368] The first magnetic field concentration unit 21 is located on the first direction X side of the fifth magnetic field concentration unit 25. The two can be arranged close to each other.

[0369] The magnetic field concentrating elements in the first magnetic field concentrating element group 101 have the same size in a direction perpendicular to the first direction X (e.g., the third direction Y). The magnetic field concentrating elements in the second magnetic field concentrating element group 102 have the same size in a direction perpendicular to the first direction X (e.g., the third direction Y). The magnetic field concentrating elements in both groups may have the same size.

[0370] The magnetic field concentrating elements in the first magnetic field concentrating element group 101 can have the same thickness relative to the reference surface S0. The magnetic field concentrating elements in the second magnetic field concentrating element group 102 can have the same thickness relative to the reference surface S0. The magnetic field concentrating elements in both groups can have the same thickness.

[0371] The magnetic field concentration units in both groups can be regular hexagons arranged in a honeycomb pattern in a two-dimensional plane parallel to the reference plane S0.

[0372] Ninth Embodiment

[0373] like Figure 2 As shown, the difference between this embodiment and the eighth embodiment is that the magnetic field concentrating units in the first magnetic field concentrating unit group 101 have different dimensions in a direction perpendicular to the first direction X (e.g., the third direction Y). The magnetic field concentrating units in the second magnetic field concentrating unit group 102 have the same dimensions in a direction perpendicular to the first direction X (e.g., the third direction Y). The magnetic field concentrating units in the two groups may have different dimensions.

[0374] The arrangement of the magnetic field concentration units in the two groups can be the same or symmetrical. The symmetry can be axial symmetry or central symmetry.

[0375] The magnetic field concentrating units in the two groups can include two sizes, and smaller magnetic field concentrating units can be arranged between adjacent larger magnetic field concentrating units. In other embodiments, more than two different sizes may also be used.

[0376] The shapes of the magnetic field concentrating units in the first magnetic field concentrating unit group 101 can also be different from each other. The shapes of the magnetic field concentrating units in the second magnetic field concentrating unit group 102 can also be different from each other. For example, they can include polygons, circles, etc.

[0377] In this embodiment, the magnetic field concentration unit can be an octagon, preferably a regular octagon, on a two-dimensional plane parallel to the reference plane S0.

[0378] Tenth Embodiment

[0379] like Figure 3 As shown, the difference between this embodiment and the sixth and seventh embodiments is that two magnetic signal sensors are used, or the magnetic field concentration units in the magnetic signal sensors are configured to have two groups, with each group of magnetic field concentration units or each signal sensor having at least two sensing units. The two sensing units are positioned far apart from each other, specifically in the first direction X.

[0380] In summary, the magnetic signal sensor and current detection device provided by this invention, by setting two magnetic field concentration units and coupling them together, can improve the saturated magnetic field strength to a certain extent. Since the magnetic field component generated by concentrating the signal magnetic field no longer changes with the change of the signal magnetic field itself when the magnetic field concentration unit is in a saturated state, improving the saturated magnetic field strength can make the magnetic field concentration unit reach the saturation state later, prolonging the stage of linear change of the magnetic field component with the signal magnetic field, and expanding the linear sensing range of the magnetic signal sensor. By controlling the interval between the two magnetic field concentration units, the ratio of the magnetic field component to the signal magnetic field can always be greater than 1, which means that the magnetic signal sensor can always obtain a high magnetic field component and has high sensitivity. Thus, it takes into account multi-directional, high sensitivity, and wide-range sensing.

[0381] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0382] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A magnetic signal sensor, characterized in that, For detecting a signal magnetic field, the signal magnetic field includes a magnetic field component along a first direction. The magnetic signal sensor includes: A first magnetic field concentrating unit is disposed on a reference surface and has a first thickness t relative to the reference surface. The reference surface is parallel to a first direction. The first magnetic field concentrating unit includes a first side on the side of the first direction or the opposite direction of the first direction. The second magnetic field concentration unit is disposed on the reference plane and close to the first magnetic field concentration unit, and has a first interval g between the two units in a direction parallel to the reference plane; g≤20t; The first sensing unit is disposed close to the first side and is configured according to at least one of the following: It is set on the second direction or the opposite side of the second direction of the first magnetic field concentration unit, and is used to sense the magnetic field signal parallel to the second direction to generate the first signal. The first direction and the second direction form an angle. It is positioned on the third direction or the opposite direction of the third direction of the first magnetic field concentration unit, and is used to sense magnetic field signals parallel to the third direction to generate a first signal. The first direction forms an angle with the third direction.

2. The magnetic signal sensor according to claim 1, characterized in that, The magnetic signal sensor is configured according to at least one of the following: The second magnetic field concentration unit is disposed on one side of the first magnetic field concentration unit in the first direction. The second magnetic field concentration unit is located on the opposite side of the first magnetic field concentration unit in the first direction; The first direction is perpendicular to the second direction; The first direction is perpendicular to the third direction; The second direction is perpendicular to the third direction; The second direction is perpendicular to the reference plane; The third direction is parallel to the reference plane.

3. The magnetic signal sensor according to claim 1, characterized in that, The first magnetic field concentration unit has a first size D in a third direction, the first size D being configured according to at least one of the following: D / t≥1; g≤1 / 2D; D / t≤40.

4. The magnetic signal sensor according to claim 1, characterized in that, The magnetic signal sensor is configured according to at least one of the following: The first magnetic field concentration unit has a first center, and the first magnetic field concentration unit is symmetrical about the first center; The first magnetic field concentration unit has a first reference line, the first magnetic field concentration unit is symmetrical about the first reference line, and the first reference line is perpendicular to the first direction; The second magnetic field concentration unit has a second center, and the second magnetic field concentration unit is symmetrical about the second center; The second magnetic field concentration unit has a second reference line, the second magnetic field concentration unit is symmetrical about the second reference line, and the second reference line is perpendicular to the first direction; The first and second magnetic field concentration units are symmetrical about the third center; The first magnetic field concentration unit and the second magnetic field concentration unit are symmetrical about the third reference line, which is perpendicular to the first direction.

5. The magnetic signal sensor according to claim 1, characterized in that, It also includes a third magnetic field concentration unit, configured according to at least one of the following: It is disposed on the reference plane and close to the first magnetic field concentration unit, and has a first distance g between it and the first magnetic field concentration unit in a direction parallel to the reference plane; Located on the third directional side of the second magnetic field concentration unit; It is disposed on the reference plane and close to the second magnetic field concentration unit, and has a first interval g between it and the second magnetic field concentration unit in a direction parallel to the reference plane; It is located on one side of the first direction of the second magnetic field concentration unit.

6. The magnetic signal sensor according to claim 1, characterized in that, Also includes: The second sensing unit is used to sense a magnetic field signal parallel to the second direction to generate a second signal; the magnetic signal sensor is configured according to at least one of the following: The first sensing unit is disposed on the opposite side of the second direction of the first magnetic field concentration unit, and is used to sense magnetic field signals parallel to the second direction to generate a first signal. The second sensing unit is disposed near the second side of the first magnetic field concentrator, the first side being the side opposite to the first direction of the first magnetic field concentrator, and the second side being the side of the first direction of the first magnetic field concentrator. The second sensing unit is located on the opposite side of the second direction of the first magnetic field concentration unit; The second sensing unit is disposed near the third side of the second magnetic field concentrating unit, wherein the third side is the side of the second magnetic field concentrating unit in the first direction or the opposite direction of the first direction. The second sensing unit is disposed on the opposite side of the second direction of the second magnetic field concentration unit; The magnetic signal sensor also includes a third magnetic field concentrating unit, which is located near the first magnetic field concentrating unit or near the second magnetic field concentrating unit. The second sensing unit is located near the fourth side of the third magnetic field concentrating unit, which is the side of the third magnetic field concentrating unit in the first direction or the opposite direction of the first direction. The second sensing unit is located on the opposite side of the second direction of the third magnetic field concentration unit.

7. The magnetic signal sensor according to claim 1, characterized in that, Also includes: The second sensing unit is used to sense a magnetic field signal parallel to a third direction to generate a second signal; the magnetic signal sensor is configured according to at least one of the following: The first sensing unit is disposed on the third direction side of the first magnetic field concentration unit and is used to sense magnetic field signals parallel to the third direction to generate a first signal. The second sensing unit is positioned close to the first side; The second sensing unit is located on the side opposite to the third direction of the first magnetic field concentration unit.

8. The magnetic signal sensor according to claim 1, characterized in that, It includes N magnetic field concentration units, configured according to at least one of the following: N magnetic field concentration units are arranged in an array; Adjacent magnetic field concentration units among N magnetic field concentration units have a first interval g; Each of the N magnetic field concentrated units has a first thickness t; N magnetic field condensing elements each have a first size D in a third direction; Where N is an integer greater than or equal to 2.

9. The magnetic signal sensor according to claim 8, characterized in that, Also includes: The second sensing unit is used to sense a magnetic field signal parallel to the second direction to generate a second signal; the magnetic signal sensor is configured according to at least one of the following: The magnetic signal sensor includes a fourth magnetic field concentration unit, a second sensing unit disposed near the fifth side of the fourth magnetic field concentration unit, a first magnetic field concentration unit being the magnetic field concentration unit located on the opposite side of the first direction among N magnetic field concentration units, the first side being the side of the first magnetic field concentration unit on the opposite side of the first direction, a fourth magnetic field concentration unit being the magnetic field concentration unit located on the first direction among N magnetic field concentration units, and the fifth side being the side of the fourth magnetic field concentration unit on the first direction. The magnetic signal sensor includes a first magnetic field concentration unit group and a second magnetic field concentration unit group. The first magnetic field concentration unit group includes the first magnetic field concentration unit, which is the magnetic field concentration unit located on the opposite side of the first direction in the first magnetic field concentration unit group. The second magnetic field concentration unit group includes a fifth magnetic field concentration unit, which is the magnetic field concentration unit located on the first side in the second magnetic field concentration unit group. The first side is the side of the first magnetic field concentration unit located on the opposite side of the first direction. The second sensing unit is disposed near the sixth side of the fifth magnetic field concentration unit, which is the side of the fifth magnetic field concentration unit located on the first side of the first direction. The first magnetic field concentration unit is located on the first side of the fifth magnetic field concentration unit.

10. The magnetic signal sensor according to claim 1, characterized in that, The second magnetic field concentrator is disposed on the opposite side of the first magnetic field concentrator in the first direction, and the first side is the side of the first magnetic field concentrator in the first direction; the magnetic signal sensor is configured according to at least one of the following: The magnetic signal sensor also includes a sixth magnetic field concentrating unit disposed on the opposite side of the first direction of the second magnetic field concentrating unit, and a seventh magnetic field concentrating unit disposed on the opposite side of the first direction of the sixth magnetic field concentrating unit. The second magnetic field concentrator has a second dimension D2 in a direction perpendicular to the first direction, and the first magnetic field concentrator has a first dimension D in a direction perpendicular to the first direction, where D2 > D; The sixth magnetic field concentration unit has a sixth dimension D6 in a direction perpendicular to the first direction, where D6>D2 and D6>D; The seventh magnetic field concentration unit has a seventh dimension D7 in the direction perpendicular to the first direction, where D7>D6, D7>D2, and D7>D.

11. The magnetic signal sensor according to claim 1, characterized in that, The first sensing unit includes a Hall element.

12. The magnetic signal sensor according to claim 11, characterized in that, The first sensing unit includes: The first Hall element has its first end coupled to the power supply terminal and its second end coupled to the ground terminal; The second Hall element has its first terminal coupled to the power supply terminal, its second terminal coupled to the ground terminal, its third terminal coupled to the third terminal of the first Hall element, and its fourth terminal coupled to the fourth terminal of the first Hall element. The first sensing unit is configured according to at least one of the following: The first end and the second end of the first Hall unit are arranged along the first direction; The third and fourth ends of the first Hall unit are arranged along the third direction; The first and second ends of the second Hall element are arranged along a third direction; The third and fourth ends of the second Hall unit are arranged along the first direction.

13. The magnetic signal sensor according to claim 11, characterized in that, It includes M magnetic field concentration units arranged sequentially along a first direction. The first magnetic field concentration unit is the magnetic field concentration unit located on the opposite side of the first direction among the M magnetic field concentration units. A second sensing unit is arranged at the magnetic field concentration unit located on the first direction among the M magnetic field concentration units. The first sensing unit includes a third Hall unit, and the second sensing unit includes a fourth Hall unit. The magnetic signal sensor is configured according to at least one of the following: The first end of the third Hall unit is coupled to the power supply end, and its second end is coupled to the ground end; the first end of the fourth Hall unit is coupled to the power supply end, its second end is coupled to the ground end, its third end is coupled to the fourth end of the third Hall unit, and its fourth end is coupled to the third end of the third Hall unit. The magnetic signal sensor includes a first amplifier, a second amplifier, and a processing unit; the first end of the third Hall unit is coupled to the power supply terminal, the second end is coupled to the ground terminal, the third end is coupled to the first input terminal of the first amplifier, and the fourth end is coupled to the second input terminal of the first amplifier; the first end of the fourth Hall unit is coupled to the power supply terminal, the second end is coupled to the ground terminal, the third end is coupled to the first input terminal of the second amplifier, and the fourth end is coupled to the second input terminal of the second amplifier; the output terminals of the first amplifier and the second amplifier are coupled to the input terminal of the processing unit.

14. A magnetic signal sensor, characterized in that, For detecting a signal magnetic field, the signal magnetic field includes a magnetic field component along a first direction. The magnetic signal sensor includes: A first magnetic field concentrating unit is disposed on a reference plane, the reference plane being parallel to a first direction, and the first magnetic field concentrating unit includes a first side on the side of the first direction or the opposite direction of the first direction; The second magnetic field concentration unit is disposed on the reference plane and close to the first magnetic field concentration unit. The first sensing unit is disposed close to the first side and is configured according to at least one of the following: It is set on the second direction or the opposite side of the second direction of the first magnetic field concentration unit, and is used to sense the magnetic field signal parallel to the second direction to generate the first signal. The first direction and the second direction form an angle. It is set on the third direction or the opposite direction of the third direction of the first magnetic field concentration unit, and is used to sense the magnetic field signal parallel to the third direction to generate the first signal. The first direction is at an angle to the third direction. The magnetic signal sensor is configured according to at least one of the following: The first magnetic field concentrator has a first thickness t relative to the reference surface, and the first magnetic field concentrator has a first dimension D in the third direction, where D / t≥1; The first magnetic field concentrator has a first thickness t relative to the reference surface, and the first magnetic field concentrator has a first dimension D in the third direction, where D / t≤40; The second magnetic field concentrator has a first thickness t relative to the reference surface, and the first magnetic field concentrator has a first dimension D in the third direction, where D / t≥1; The second magnetic field concentrator has a first thickness t relative to the reference surface, and the first magnetic field concentrator has a first dimension D in the third direction, where D / t≤40.

15. A current detection device, characterized in that, A current detection device is used to detect the current flowing through a conductor. The device includes: A magnetic signal sensor, configured as described in any one of claims 1-14; When the current detection device detects the current in the conductor, the magnetic signal sensor is located on one side of the conductor in a second direction, and the direction of the current in the conductor is parallel to the third direction.

16. The current detection device according to claim 15, characterized in that, The current detection device includes two magnetic signal sensors, namely the first sensor and the second sensor. The first sensor includes a first magnetic field concentration unit, a second magnetic field concentration unit, a first sensing unit disposed on a side opposite to the first direction of the first magnetic field concentration unit, and a second sensing unit disposed on a side opposite to the first direction of the second magnetic field concentration unit. The second sensor includes an eighth magnetic field concentration unit, a ninth magnetic field concentration unit, a third sensing unit disposed on the side opposite to the first direction of the eighth magnetic field concentration unit, and a fourth sensing unit disposed on the side opposite to the first direction of the ninth magnetic field concentration unit. The conductor includes a first conductor segment and a second conductor segment spaced apart along a first direction; When the current detection device detects the current in the conductor, the first sensor is located on the second direction side of the first conductor segment, and the second sensor is located on the second direction side of the second conductor segment.

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