Packaging structure and optical guide element
By setting optical guiding components and connection structures on the outside of the photonic component, the problem of difficulty in achieving wafer-level photoelectric inspection when the photonic component is coupled to the fiber edge is solved, thus realizing efficient photoelectric inspection and improving optical coupling efficiency.
Patent Information
- Application Number
- CN202610579694.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2025-05-05
- Filing Date
- 2026-04-29
- Publication Date
- 2026-11-06
AI Technical Summary
In existing technologies, edge coupling between photonic components and optical fibers makes it difficult to achieve photoelectric inspection of wafer-level photonic structures, leading to increased processing time and costs.
An encapsulation structure was designed, comprising a photonic component, an optical guidance component, and a connection structure. The optical guidance component is disposed outside the photonic component and changes the transmission direction of the optical signal through a reflective element and a lens. The connection structure couples the optical guidance component to the photonic component to reduce scattering and achieve vertical transmission of the optical signal.
This technology enables photoelectric inspection above wafer-level photonic structures, improving inspection efficiency, reducing processing time and cost, while also increasing optical coupling efficiency and the reliability of the packaging structure.
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Figure CN123047074A_ABST
Abstract
Description
Technical Field
[0001] This disclosure generally relates to a packaging structure and an optical guidance element. Background Technology
[0002] Typically, photonic components are optically coupled to optical fibers via edge coupling between the fiber and waveguides exposed at the edges of the photonic component. Therefore, it becomes difficult to perform optoelectronic inspections on wafer-level photonic structures that would otherwise be performed from above the structure rather than from its edges, unless a split-segment operation is performed to expose the waveguides at the edges of the split-segment photonic structure. However, such a process can increase processing time and cost. Summary of the Invention
[0003] In one or more arrangements, an encapsulation structure includes a photonic component, an optical guiding component, and a connection structure. The optical guiding component is disposed externally to the photonic component and configured to change the transmission direction of optical signals from the photonic component. The connection structure connects the optical guiding component to the photonic component and is configured to reduce scattering of the optical signals during transmission.
[0004] In one or more arrangements, an encapsulation structure includes a photonic component, an optical guiding component, and an encapsulation. The photonic component includes an optical channel. The encapsulation encapsulates the photonic component and the optical guiding component. The optical guiding component is configured to guide optical signals from the optical channel along an optical path embedded in the encapsulation and emitted from the encapsulation.
[0005] In one or more arrangements, an optical guiding element includes a reflective element. The reflective element is fixedly coupled to the optical channel of a photonic assembly via an integrated alignment structure. The optical guiding element is configured to redirect, focus, or diffuse optical signals based on a predetermined distribution profile of the optical guiding element. Attached Figure Description
[0006] A better understanding of the various aspects of this disclosure will be achieved by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that the various features may not be drawn to scale, and the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation.
[0007] Figure 1A This is a top view of the encapsulation structure according to some arrangements of this disclosure.
[0008] Figure 1B It is a cross-section of an encapsulation structure arranged according to some of the present disclosure.
[0009] Figure 1C This is a top view of the encapsulation structure according to some arrangements of this disclosure.
[0010] Figure 1D It is a cross-section of an encapsulation structure arranged according to some of the present disclosure.
[0011] Figure 1E This is a perspective view of a portion of an encapsulation structure arranged according to some of the present disclosure.
[0012] Figure 2A This is a top view of the encapsulation structure according to some arrangements of this disclosure.
[0013] Figure 2B It is a cross-section of an encapsulation structure arranged according to some of the present disclosure.
[0014] Figure 2C It is a cross-section of a portion of an encapsulation structure arranged according to some of the present disclosure.
[0015] Figure 2D This is a top view of the encapsulation structure according to some arrangements of this disclosure.
[0016] Figure 2E This is a perspective view of a portion of an encapsulation structure arranged according to some of the present disclosure.
[0017] Figure 3 It is a cross-section of an encapsulation structure arranged according to some of the present disclosure.
[0018] Figure 4A , Figure 4B , Figure 4C , Figure 4D , Figure 4E , Figure 4F , Figure 4G , Figure 4H , Figure 4I , Figure 4J , Figure 4K , Figure 4L and Figure 4M The present disclosure describes the various stages of an exemplary method for manufacturing a packaging structure according to some embodiments of the present disclosure.
[0019] Figure 5A , Figure 5B , Figure 5C , Figure 5D , Figure 5E , Figure 5F , Figure 5G , Figure 5H and Figure 5I The present disclosure describes the various stages of an exemplary method for manufacturing a packaging structure according to some embodiments of the present disclosure.
[0020] Figure 6A , Figure 6B , Figure 6C , Figure 6D , Figure 6E and Figure 6FThe present disclosure describes the various stages of an exemplary method for manufacturing a packaging structure according to some embodiments of the present disclosure.
[0021] Common reference numerals are used throughout the figures and detailed description to indicate the same or similar elements. This disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. Detailed Implementation
[0022] Figure 1A This is a top view of the encapsulation structure 1A according to some arrangements of this disclosure. Figure 1B This is a cross-section of the encapsulation structure 1A according to some arrangements of this disclosure. In some arrangements, Figure 1B It is along Figure 1A The cross section of line 1B-1B' in the diagram. Figure 1B A portion of the package structure 1A can be shown. Please note that for clarity... Figure 1A Some components have been omitted.
[0023] Package structure 1A may include substrates 10 and 1000, photonic components 20, electronic components 30, 50 and 50M, optical guiding components 40, reinforcing elements 70A and 70B, connection structure 80, encapsulation 90, thermal cooling component 92, and thermally conductive adhesive 94. Each set of photonic components 20 and electronic components 30 may be referred to as an optical engine, and each optical engine may be optically coupled to an optical guiding component 40. Electronic components 50 may combine multiple sets of optical engines and multiple corresponding electronic components 50M. Package structure 1A may be or include a chip-on-a-chip (COWOS) structure.
[0024] The substrate 1000 may be or include a carrier, a printed circuit board (PCB), or a system board. The substrate 1000 may include conductive pads 1020 and 1040 exposed by surface 1001. The substrate 1000 may support and be electrically connected to the substrate 10.
[0025] Substrate 10 may support photonic component 20, optical guidance component 40, electronic components 50 and 50M, and interconnection structure 80. In some arrangements, substrate 10 is electrically connected to substrate 1000. Substrate 10 may include, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass fiber-based copper foil laminate. Substrate 10 may include interconnect structures, such as multiple conductive traces and multiple conductive vias. In some embodiments, substrate 10 includes a ceramic substrate, a metal plate, an organic substrate, a lead frame, or a semiconductor substrate (e.g., a substrate containing a GaN-based semiconductor material). In some embodiments, substrate 10 may include a bilayer substrate comprising a core layer and conductive material and / or structures disposed on the upper and lower surfaces of substrate 10. The conductive material and / or structures may include multiple conductive traces. In some arrangements, substrate 10 includes conductive pads 110, 120, 130, and 140 and conductive vias 10v (also referred to as through-silicon vias (TSVs)). Substrate 10 may be or may contain inserts. Substrate 10 may be electrically connected to substrate 1000 via conductive pads 120, 140, 1020, and 1040 and electrical contacts 10c. Electrical contacts 10c may contain solder balls or solder bars. In some arrangements, electrical contacts 10c may contain controlled collapse chip connection (C4) bumps, ball grid arrays (BGAs), or pad grid arrays (LGAs). Power signals may be supplied to substrate 10 via electrical contacts 10c, and substrate 10 may be further connected to a voltage regulator, such as a low dropout (LDO) voltage regulator, for regulating the power signals.
[0026] Photonic component 20 may be disposed above and electrically connected to substrate 10. Photonic component 20 may have an active surface facing substrate 10 and a back-side surface or passive surface facing electronic component 30. In some arrangements, photonic component 20 is configured to be optically coupled to one or more optical components (e.g., optical fiber or fiber array unit (FAU)). In some arrangements, photonic component 20 is configured to be optically coupled to one or more optical components via edge coupling. Photonic component 20 may be or include photonic integrated circuit (PIC), laser diode, receiver, waveguide, photodetector, photodiode, semiconductor optical amplifier (SOA), grating coupler, fiber optic coupling structure, optical modulator (e.g., Mach-Zehnder modulator or microring modulator), or combinations thereof. Photonic component 20 may be referred to as an optical domain controller that manages a unified set of photoelectric conversion functions. In some arrangements, the encapsulation structure 1A is included in a wearable device or haptic feedback module, such as a photonic-driven micro haptic motor, and the photonic component 20 can be configured to control at least one auxiliary skin actuator to achieve wearable skin simulation.
[0027] In some arrangements, the photonic component 20 includes a substrate 200, conductive pads 210 and 220, barrier layers 212 and 222, conductive layers 210c, 220c and 211, a conductive via 20v, an optical channel 240, and dielectric layers 261, 262 and 263. The substrate 200 may be or include a semiconductor layer, such as a silicon layer. Conductive layer 211 may be formed on conductive pad 210, barrier layer 212 may be formed on conductive layer 211, and barrier layer 222 may be formed on conductive pad 220. Conductive layer 210c may be or include a circuit layer. The circuit layer may include one or more circuits configured to provide photoelectric conversion. The conductive via 20v electrically connects conductive layer 210c to conductive layer 220c. The conductive via 20v may be referred to as a through-silicon via (TSV). Conductive layer 220c is electrically connected to conductive pad 220. Optical channel 240 can be configured to optically couple to one or more optical components (e.g., optical fiber or fiber array unit (FAU)). Optical channel 240 can be or includes an optical waveguide. Conductive pads 210 and 220, conductive layers 210c, 220c and 211, and conductive via 20v can contain one or more conductive materials, such as metals or metal alloys. Examples include gold (Au), silver (Ag), aluminum (Al), copper (Cu), or alloys thereof. Barrier layers 212 and 222 can contain nickel (Ni). The thickness of photonic component 20 can be equal to or less than about 100 μm, 80 μm, 60 μm, or 50 μm, for example, from about 50 μm to about 100 μm. In some arrangements, the portion containing conductive pads 210 and 220, conductive layers 210c, 220c and 211, and conductive via 20v can be referred to as the electrical transmission region, and the portion containing optical channel 240 can be referred to as the optical transmission region. The photonic component 20 may further include a calibration unit configured to compensate for static and dynamic variations in the optical signal within the optical channel 240. These static and dynamic variations in the optical signal may be or include phase errors caused by deviations in the optical channel (e.g., optical waveguide), interferometer, thermal shift, process variations, etc.
[0028] Electronic component 30 may be disposed or stacked above photonic component 20. Electronic component 30 may have an active surface facing photonic component 20 and a back-side surface or passive surface opposite the active surface. In some arrangements, electronic component 30 is electrically connected to photonic component 20. In some arrangements, electronic component 30 is electrically connected to substrate 10 through conductive vias 20v in photonic component 20. In some arrangements, electronic component 30 includes a conductive pad 310 and at least one dielectric layer 310d. The conductive pad 310 may be referred to as a conductive pillar and partially fills an opening defined by dielectric layer 310d. The conductive pad 310 may comprise Au, Ag, Al, Cu, Ni, or alloys thereof. The dielectric layer 310d may comprise, for example, one or more organic materials (e.g., PA, PI, PBO, epoxy resin, and epoxy-based materials) or one or more inorganic materials (e.g., silicon oxide, silicon nitride, glass, and ceramics). In some arrangements, dielectric layer 310d is or comprises PI. In some arrangements, electronic component 30 is electrically connected to photonic component 20 via conductive pad 310, connecting element 92c, barrier layer 212, conductive layer 211, and conductive pad 210. Connecting element 92c may include conductive bumps. Connecting element 92c may be encapsulated by protective element 92u. Protective element 92u may include underfill. In some embodiments, underfill comprises epoxy resin, molding material (e.g., epoxy molding material or other molding material), polyimide, phenolic compound or material, material containing silicone dispersed therein, or combinations thereof. Electronic component 30 may be or include an electronic integrated circuit (EIC). In some arrangements, electronic component 30 includes logic circuitry. In some arrangements, electronic component 30 includes a modulator driver (DRV), transimpedance amplifier (TIA), or combinations thereof. The thickness of electronic component 30 may be equal to or greater than the thickness of photonic component 20. Electronic component 30 may be referred to as an electrical domain controller, which manages a unified set of purely electrical functions. Each set of photonic components 20 and electronic components 30 may be referred to as an optical engine, and electronic components 50 may be arranged in combination with multiple sets of optical engines. One or more of the optical engines may further include a crystal oscillator configured to provide a stable clock signal for better control of the modulator of the photonic component 20, and one or more clock signal contacts configured to receive the clock signal.
[0029] Optical guiding components 40 (also referred to as "optical guiding elements") may be disposed above the substrate 10. In some arrangements, one or more of the optical guiding components 40 may be optically coupled to one or more of the photonic components 20. In some arrangements, each of the optical guiding components 40 is optically coupled to each of the photonic components 20. In some arrangements, the optical guiding components 40 are disposed outside the photonic components 20 and configured to change the transmission direction of the optical signal L1 from the photonic components 20. In some arrangements, the optical guiding components 40 are disposed on the lateral side of the photonic components 20 and configured to switch the transmission direction of the optical signal L1 between a generally horizontal direction (e.g., x-axis) and a generally vertical direction (e.g., z-axis). For example, during the transmission of an optical signal L1 from the photonic component 20 toward the outside of the packaging structure 1A, the optical guiding component 40 is configured to switch the transmission direction of the optical signal L1 from the generally horizontal direction (e.g., the x-axis) to the generally vertical direction so that it can be emitted from the packaging structure 1A.
[0030] In some arrangements, the optical guidance assembly 40 includes a switching section 40A and a transmission section 40B. In some arrangements, the switching section 40A and the transmission section 40B are connected to each other. The switching section 40A and the transmission section 40B may be integrally formed as a single piece. Alternatively, the switching section 40A and the transmission section 40B may be formed separately and then assembled to each other.
[0031] In some arrangements, the optical guiding assembly 40 (or switching portion 40A) includes a reflective surface 410s configured to reflect the optical signal L1 to change the transmission direction of the optical signal L1. In some arrangements, the optical guiding assembly 40 (or switching portion 40A) includes a reflective layer 410 (also referred to as a "reflective element") defining the reflective surface 410s. The reflective layer 410 includes a metal layer. In some arrangements, the reflective element (e.g., the reflective layer 410) is configured to change the transmission direction of the optical signal L1 from the optical channel 240. In some arrangements, the optical guiding assembly 40 (or switching portion 40A) further includes a lens 420 facing the optical channel 240 of the photon assembly 20. In some arrangements, the reflective element (e.g., the reflective layer 410) is configured to reflect the optical signal L1 transmitted through the lens 420. In some arrangements, the transmission portion 40B is configured to transmit the optical signal L1 upward from the switching portion 40A. In some arrangements, the transmission portion 40B includes an anti-reflective element 430 on the surface 401 of the optical guidance assembly 40. The surface 401 may be referred to as the emitting surface.
[0032] In some arrangements, the optical guide assembly 40 (or switching portion 40A) further includes a base 440. The base 440 may define a protrusion relative to the lens 420. The reflective surface 410s and a portion of the base 440 are spaced apart from each other by a gap. The protruding base 440 may define a recess in which a portion of the connecting structure 80 is filled to form an interlocking mechanism that increases adhesion between the optical guide assembly 40 and the connecting structure 80.
[0033] In some arrangements, the switching portion 40A includes a first transparent body defining a lens 420 and a portion of the optical path for the optical signal L1, and a reflective layer 410 comprising metal is formed on the surface of the first transparent body. In some arrangements, the transmission portion 40B includes a second transparent body defining another portion of the optical path for the optical signal L1, and an anti-reflective element 430 is formed on the surface (e.g., surface 401) of the second transparent body. The transparent body may be formed of or contain silicon, sol-gel glass, transparent polymer, or any suitable optically transparent material. In some arrangements, the optical guiding assembly 40 (or optical guiding element) is configured to redirect, focus, or diffuse the optical signal L1 based on a predetermined distribution profile of the optical guiding assembly 40. According to some arrangements of this disclosure, with the above designs, the optical signal L1 can be used in photoelectric inspection during the manufacturing process of the package structure, especially before performing single-step operations, and thus yield can be increased.
[0034] Electronic component 50 may be disposed above and electrically connected to substrate 10. Electronic component 50 may have a surface 501 facing substrate 10 and a surface 502 opposite to surface 501. Surface 501 may be an active surface. Surface 502 may be a back-side surface or a passive surface. In some arrangements, electronic component 50 includes a conductive pad 520 exposed by surface 501. In some arrangements, electronic component 50 is electrically connected to photonic component 20 through substrate 10. In some arrangements, electronic component 50 may be or include a processing component, such as an ASIC, FPGA, GPU, etc., or a combination thereof. Each set of photonic component 20 and electronic component 30 may be referred to as an optical engine, and electronic component 50 may be combined with multiple sets of optical engines to transmit electrical signals via optical transmission.
[0035] Electronic component 50M may be disposed above and electrically connected to substrate 10. In some arrangements, electronic component 50M is disposed around or near electronic component 50. In some arrangements, electronic component 50M is electrically connected to electronic component 50 through substrate 10. In some arrangements, electronic component 50M may be or include storage components, such as memory devices, such as high-bandwidth memory (HBM) components, or combinations thereof. Electronic component 50 (processing component) may be combined with multiple electronic components 50M (storage components) in an arrangement. Various arrangements of electronic components 50 and 50M are possible; for example, electronic component 50M may be disposed on three or four lateral sides of electronic component 50 instead of two opposing lateral sides. The groups of photonic components 20 and electronic components 30 may be arranged according to the corresponding arrangement of electronic components 50 and 50M, depending on the specific application.
[0036] A reinforcing element 70A may be disposed above and connected to the photonic component 20. In some arrangements, the reinforcing element 70A is connected to the photonic component 20 via electrically isolated connection elements. The electrically isolated connection elements may include dummy connection elements. In some arrangements, the reinforcing element 70A includes a dielectric layer 710d. In some arrangements, the dielectric layer 710d is connected to the dielectric layer 210d via a thermal bonding process. The dielectric layer 710d may include, for example, one or more organic materials (e.g., PA, PI, PBO, epoxy resin, and epoxy-based materials) or one or more inorganic materials (e.g., silicon oxide, silicon nitride, glass, and ceramics). In some arrangements, the dielectric layer 710d is or includes PI. In some arrangements, the reinforcing element 70A includes discrete components different from the photonic component 20. In some arrangements, the reinforcing element 70A does not contain logic circuitry. In some arrangements, the reinforcing element 70A includes a dummy substrate (e.g., a dummy silicon substrate), a dummy die, etc. In some arrangements, the reinforcing element 70A comprises a dummy die without logic circuitry. The thickness of the reinforcing element 70A may be equal to or greater than the thickness of the photonic component 20. The reinforcing element 70A may have a thickness substantially the same as that of the electronic component 30.
[0037] In some arrangements, the reinforcing element 70B is disposed above the electronic assembly 30 and the reinforcing element 70A. In some arrangements, the reinforcing element 70B is supported by the electronic assembly 30 and the reinforcing element 70A. In some arrangements, the reinforcing element 70B vertically overlaps with the gap G1 between the electronic assembly 30 and the reinforcing element 70A. In some arrangements, the reinforcing element 70B is connected to the electronic assembly 30 and the reinforcing element 70A via an adhesive layer 95. The adhesive layer 95 may be or contain an insulating adhesive. The adhesive layer 95 may be or contain a die attach film (DAF). The adhesive layer 95 may contain a thermal interface material (TIM). In some arrangements, the reinforcing element 70B is configured to provide a thermal channel TC1 substantially perpendicular to the optical channel 240 of the photonic assembly 20 to increase heat transfer to the exterior of the package structure 1A. According to some arrangements of this disclosure, the adhesive layer 95 (e.g., TIM) is used to connect the reinforcing element 70B to the reinforcing element 70A and the electronic assembly 30, which simplifies processing steps, reduces costs, and improves heat dissipation.
[0038] In some arrangements, reinforcement element 70B includes discrete components different from photonic component 20, electronic component 30, and reinforcement element 70A. In some arrangements, reinforcement element 70B does not contain logic circuitry. In some arrangements, reinforcement element 70B includes a dummy substrate (e.g., a dummy silicon substrate), a dummy die, etc. In some arrangements, reinforcement element 70B includes a dummy die without logic circuitry. The thickness of reinforcement element 70B may be equal to or greater than the thickness of photonic component 20. The thickness of reinforcement element 70B may be substantially equal to or greater than the thickness of reinforcement element 70A. In some arrangements, reinforcement elements 70A and 70B together form a reinforcement structure. Photonic component 20, electronic component 30, and reinforcement elements 70A and 70B may be collectively referred to as a subpackage.
[0039] A connection structure 80 may be disposed above the substrate 10. In some arrangements, one or more of the connection structures 80 may connect one or more of the optical guiding components 40 to one or more of the photonic components 20. In some arrangements, each of the connection structures 80 connects each of the optical guiding components 40 to each of the photonic components 20. In some arrangements, the connection structure 80 is configured to reduce scattering of the optical signal L1 during transmission. In some arrangements, the connection structure 80 includes a portion between the optical channel 240 and the lens 420. In some arrangements, a reflective element (e.g., a reflective layer 410) configured to change the transmission direction of the optical signal L1 from the optical channel 240 is disposed outside the photonic component 20 and spaced apart from the optical channel 240 of the photonic component 20 by optical fasteners (e.g., connection structures 80) and the lens 420, and the optical fasteners (e.g., connection structures 80) and the lens 420 (or the transparent body of the switching portion 40A) have different refractive indices. In some arrangements, the refractive index of the connecting structure 80 is lower than that of the lens 420 (or the transparent body of the switching portion 40A). The refractive index of the connecting structure 80 is lower than about 1.5, for example, about 1.3, 1.2 or 1, and the refractive index of the lens 420 (or the transparent body of the switching portion 40A) is greater than about 1.5, for example, about 1.8, 2, 2.5 or 3.
[0040] In some arrangements, the connection structure 80 (or optical fastener) contacts the substrate 10, the optical channel 240, the reflective layer 410, and the lens 420. In some arrangements, the connection structure 80 contacts the substrate 10, the optical channel 240 of the photonic assembly 20, and the optical guiding assembly 40. In some arrangements, the connection structure 80 includes an optical gel. In some arrangements, the connection structure 80 has an irregular profile when viewed in cross-sectional view. In some arrangements, the connection structure 80 may be referred to as an optical island, which connects the optical guiding assembly 40 to the photonic assembly 20 and allows the optical signal L1 to be transmitted through it. The optical guiding assembly 40 may be partially embedded in the optical island. In some arrangements, a switching portion 40A is embedded in the connection structure 80. The photonic assembly 20, the electronic assembly 30, the optical guiding assembly 40, the reinforcing elements 70A and 70B, and the connection structure 80 may be collectively referred to as a subpackage. In some arrangements, the connecting structure 80 and the lens 420 are collectively referred to as the integrated alignment structure, and the reflective layer 410 (or reflective element) is fixedly coupled to the photonic assembly 20 via the integrated alignment structure.
[0041] Encapsulation 90 may be disposed above substrate 10. In some arrangements, encapsulation 90 encapsulates photonic component 20, optical guidance component 40, electronic components 30, 50 and 50M, reinforcing elements 70A and 70B, and connection structure 80. In some arrangements, encapsulation 90 encapsulates reflective elements (e.g., reflective layer 410). In some arrangements, surface 401 of optical guidance component 40 is exposed by encapsulation 90. Encapsulation 90 may comprise epoxy resin, molding material (e.g., epoxy molding material or other molding material), polyimide, phenolic compound or material, material containing silicone dispersed therein, or combinations thereof. In some arrangements, connection structure 80, protective element 91u, and encapsulation 90 may be collectively referred to as fastener assembly to fasten optical guidance component 40 to photonic component 20.
[0042] A thermal cooling assembly 92 may be configured and connected to a substrate 1000. In some arrangements, the thermal cooling assembly 92 covers an encapsulation 90 and reinforcing structures (e.g., reinforcing elements 70A and 70B). In some arrangements, the thermal cooling assembly 92 covers an encapsulation 90 and reinforcing structures (e.g., reinforcing elements 70A and 70B). In some arrangements, the heat dissipation rate of the encapsulation 90 is lower than that of the reinforcing element 70B. In some arrangements, the heat dissipation rate of the encapsulation 90 is lower than that of the thermal cooling assembly 92. In some arrangements, the thermal cooling assembly 92 is configured to provide additional thermal cooling effects in addition to the thermal channel TC1 provided by the reinforcing element 70B. In some arrangements, a portion of the optical guiding assembly 40 is exposed by an opening 92A in the thermal cooling assembly 92. In some arrangements, the thermal cooling assembly 92 is connected to the substrate 1000 via a connecting element 93. The thermal cooling assembly 92 may be or comprise a metal plate. The connecting element 93 may comprise solder bumps, an adhesive layer, etc.
[0043] A thermally conductive adhesive 94 may be present between the encapsulation 90 and the thermal cooling assembly 92. In some arrangements, the thermal cooling assembly 92 is bonded to the lateral edges of the encapsulation 90 and the substrate 10 via the thermally conductive adhesive 94. The thermally conductive adhesive 94 may comprise a thermal interface material (TIM).
[0044] refer to Figure 1A In some arrangements, the thermal cooling assembly 92 includes multiple openings 92A. In some arrangements, from a top view perspective, three optical guiding assemblies 40 are exposed by one opening 92A. In some arrangements, from a top view perspective, one or more of the connection structures 80 have irregular profiles. In some arrangements, from a top view perspective, one or more of the connection structures 80 have different irregular profiles. In some arrangements, from a top view perspective, portions of the substrate 10 and portions of the connection structure 80 are exposed by openings 92A. In some arrangements, reference... Figure 1A and 1BElectronic components 50 and 50M, as well as reinforcing element 70B, are covered by thermal cooling assembly 92, wherein surfaces 502 and 701 are in contact with thermally conductive adhesive 94, thereby improving heat dissipation.
[0045] Figure 1C This is a top view of the packaging structure 1C according to some arrangements of this disclosure. Figure 1D This is a cross-section of the package structure 1C according to some arrangements of this disclosure. In some arrangements, Figure 1D It is along Figure 1C The cross section of line 1D-1D' in the middle. Figure 1D A portion of the package structure 1C can be shown. Please note that for clarity... Figure 1C Some components are omitted. Package structure 1C is similar to package structure 1A, and the differences between them are described below.
[0046] In some arrangements, reinforcing element 70B is connected to electronic component 30 via a solderless conductive structure. The solderless conductive structure between reinforcing element 70B and electronic component 30 may include a conductive pad 320, a connecting element 97, and a pad 730 for reinforcing element 70B. In some arrangements, reinforcing element 70B is connected to reinforcing element 70A via a solderless conductive structure. The solderless conductive structure between reinforcing element 70B and reinforcing element 70A may include a pad 720, a connecting element 97, and a pad 730 for reinforcing element 70B. In some arrangements, connecting element 97 does not contain solder material. In some arrangements, connecting element 97 includes an alloy or intermetallic compound (IMC) layer. In some arrangements, connecting element 97 between reinforcing element 70B and electronic component 30 includes an IMC layer formed from metals from pad 730 and conductive pad 320. In some arrangements, connecting element 97 between reinforcing element 70B and reinforcing element 70A includes an IMC layer formed from metals from pad 730 and pad 720.
[0047] refer to Figure 1C In some arrangements, from a top view perspective, an optical guidance component 40 is exposed by an opening 92A. In some arrangements, reference... Figure 1C and 1D From a top view perspective, a portion of the thermally conductive adhesive 94 is exposed by an opening 92A. In some arrangements, the opening 92A is wider or larger than the surface 401 of the optical guide assembly 40 to provide alignment tolerance between the thermal cooling assembly 92 and the optical guide assembly 40.
[0048] Figure 1E This is a perspective view of a portion of an encapsulation structure according to some arrangements of this disclosure. In some arrangements, Figure 1E A perspective view showing a portion of package structure 1A and / or a portion of package structure 1C.
[0049] In some arrangements, the reflective layer 410 and the lens 420 extend in a generally parallel direction (e.g., the y-axis). In some arrangements, although... Figure 1E Only one optical signal L1 is shown, but multiple optical signals from multiple optical channels of photonic component 20 can be transmitted through lens 420 and reflected by reflective layer 410.
[0050] According to some arrangements of this disclosure, the optical guiding component 40 allows the optical signal L1 from the optical channel 240 to switch its transmission direction from a generally horizontal direction to a generally vertical direction, thus enabling photoelectric inspection to be performed from above the photonic component 20 via vertical coupling prior to the individual separation operation. Therefore, only the separated units that pass the inspection (e.g., structures including photonic components 20 with electronic components 30 disposed thereon) can be further connected to the substrate 1000 to form a package structure, and separated units that fail the inspection (e.g., structures including photonic components 20 with electronic components 30 disposed thereon) can be discarded or reworked. Thus, only separated units considered "known qualified dies" can be used to form the package structure. Therefore, the manufacturing process of the package structure can be simplified without reworking the photonic component 20 after separation if it is determined that the separated unit has failed the inspection, and costs can be reduced.
[0051] Furthermore, according to some arrangements of this disclosure, the optical guiding assembly 40 includes a reflective surface 410s configured to switch the transmission direction of the optical signal L1 by reflection. Therefore, vertical transmission can be achieved through edge coupling of the optical signal L1, rather than through grating coupling using a grating coupler. Moreover, the bandwidth of the optical signal L1 can be increased compared to an optical signal coupled by a grating coupler, thus increasing optical coupling efficiency.
[0052] Furthermore, according to some arrangements of this disclosure, the photonic component 20 and the optical guiding component 40 are optically coupled to each other via a connection structure 80, wherein both the photonic component 20 and the optical guiding component 40 are partially embedded in the connection structure. Due to this design, although the encapsulation 90 encapsulates the photonic component 20, the optical guiding component 40, and the connection structure 80, the optical signal L1 can be transmitted from the photonic component 20 to the optical guiding component 40 and emitted from the encapsulation structure via the optical guiding component 40. Therefore, wafer-level photoelectric inspection can be performed even though the wafer-level structure is encapsulated by the encapsulation 90.
[0053] Furthermore, according to some arrangements of this disclosure, reinforcing elements 70A and 70B are jointly configured to form a continuous structure in a direction substantially parallel to the active surface of the photonic assembly 20 (e.g., the x-axis), which can significantly increase the structural strength of the entire photonic assembly 20. Therefore, warpage can be reduced, optical alignment can be improved, and the reliability of the packaging structure can be increased.
[0054] Figure 2A This is a top view of the encapsulation structure 2A according to some arrangements of this disclosure. Figure 2B This is a cross-section of the encapsulation structure 2A according to some arrangements of this disclosure. In some arrangements, Figure 2B It is along Figure 2A The cross section of line 2B-2B' in the diagram. Figure 2B A portion of package structure 2A can be shown. Please note that for clarity, [the following is unclear and likely refers to a different package]. Figure 2A Some components are omitted. Package structure 2A is similar to package structure 1A, and the differences between them are described below.
[0055] The package structure 2A may include substrates 10 and 1000, photonic components 20, electronic components 30, 50 and 50M, optical guidance components (or optical guidance elements), reinforcing elements 70A and 70B, encapsulation 90, thermal cooling components 92, and thermally conductive adhesive 94.
[0056] In some arrangements, the optical guiding assembly includes an optical coupling portion 290 and a reflective element 280. The reflective element 280 may define a reflective surface 280s. In some arrangements, the optical guiding assembly corresponds to one of the photonic components 20. In some arrangements, each of the optical guiding assemblies corresponds to each of the photonic components 20. In some arrangements, the optical guiding assembly is configured to guide an optical signal L1 from an optical channel 240 along an optical path embedded in an encapsulation 90 and emitted from the encapsulation 90. In some arrangements, the optical channel 240 is covered by a dielectric layer 261, and a portion of the optical channel 240 is exposed by the dielectric layer 261 and contacts the optical guiding assembly (e.g., the optical coupling portion 290). In some arrangements, the optical guiding element is configured to redirect, focus, or diffuse the optical signal L1 based on a predetermined distribution profile of the optical guiding element. According to some arrangements of this disclosure, the above design allows for the use of optical signal L1 in photoelectric inspection during the manufacturing process of the package structure, especially before performing single-partitioning operations, and thus increases yield.
[0057] In some arrangements, the optical coupling portion 290 and the reflective element 280 are embedded in the photonic assembly 20. In some arrangements, the optical coupling portion 290 and the reflective element 280 are located in a recess 261C defined by the dielectric layer 261. In some arrangements, the top surface 290a of the optical coupling portion 290 is substantially aligned with the top surface 261a of the dielectric layer 261. In some arrangements, the reflective element 280 is configured to change the transmission direction of the optical signal L1 from the optical channel 240. In some arrangements, the encapsulation 90 encapsulates the reflective element 280. In some arrangements, the reflective surface 280s defined by the reflective element 280 is inclined relative to the top surface 261a of the dielectric layer 261. In some arrangements, reinforcement structures (e.g., reinforcement elements 70A and 70B) define an optical path for the optical signal L1. In some arrangements, the reinforcing element 70A (or dummy die) is above the reflective element 280 and configured to transmit the optical signal L1 reflected by the reflective element 280 toward the outside of the package structure 2A.
[0058] In some arrangements, the reinforcing structure (or reinforcing element 70B) includes a lens 70L configured to emit an optical signal L1 from the encapsulation 90. In some arrangements, the lens 70L is exposed by an opening 92A of the thermal cooling assembly 92. In some arrangements, the lens 70L is exposed by an opening 94A of the thermally conductive adhesive 94. In some arrangements, from a top view perspective, the thermally conductive adhesive 94 is partially exposed by an opening 92A of the thermal cooling assembly 92. The lens 70L can combine the intensity of the optical signal L1 that has been scattered after passing through the reinforcing elements 70A and 70B. Therefore, the intensity of the optical signal L1 can be focused and calibrated.
[0059] In some arrangements, the reflective element 280 includes a metal layer. In some arrangements, the optical coupling portion 290 includes an optical gel, a dielectric layer, etc.
[0060] Figure 2C It is a cross-section of a portion 2C of a packaging structure 2A arranged according to some of the present disclosure.
[0061] In some arrangements, the package structure 2A further includes an optical laminate 74 located between the reinforcing element 70A (or dummy die) and the reflective element 280. In some arrangements, the optical laminate 74 connects the reinforcing element 70A (or dummy die) to the photonic assembly 20.
[0062] In some arrangements, the optical laminate 74 includes an antireflective layer 740 and dielectric layers 710 and 740d. In some arrangements, the antireflective layer 740 is located between the reinforcing element 70A (or a dummy die) and the photonic assembly 20. In some arrangements, the dielectric layer 710d is thermally bonded to the dielectric layer 261 of the photonic assembly 20. In some arrangements, the optical coupling portion 290 and the optical laminate 74 are collectively referred to as an integrated alignment structure, and the reflective element 280 is fixedly coupled to the optical channel 240 of the photonic assembly 20 via the integrated alignment structure.
[0063] In some arrangements, the recess 261C of the dielectric layer 261 is defined by side surfaces 261s1 and 261s2. In some arrangements, the reflective element 280 is disposed or formed on the side surface 261s1, which is inclined relative to the top surface 261a, and the optical channel 240 is exposed by the side surface 261s2. In some arrangements, the reflective surface 280s is generally parallel to the side surface 261s1.
[0064] Figure 2D This is a 2D top view of an encapsulation structure according to some arrangements of this disclosure. In some arrangements, Figure 2B It is along Figure 2D The cross-section of line 2B-2B' in the diagram. Note that, for clarity, in... Figure 2D Some components have been omitted.
[0065] refer to Figure 2D In some arrangements, from a top view, an optical guiding assembly 40 is exposed by an opening 92A. In some arrangements, from a top view, a portion of the thermally conductive adhesive 94 is exposed by an opening 92A.
[0066] Figure 2E This is a perspective view of a portion of an encapsulation structure according to some arrangements of this disclosure. In some arrangements, Figure 2E A perspective view showing a portion of the package structure 2A.
[0067] In some arrangements, the reflecting element 280 and the lens 70L extend in a generally parallel direction (e.g., the y-axis). In some arrangements, although... Figure 2E Only one optical signal L1 is shown, but multiple optical signals from multiple optical channels of photonic component 20 can be reflected by reflective element 280 and transmitted through lens 70L.
[0068] According to some arrangements of this disclosure, reinforcing elements 70A and 70B allow the optical signal L1 to pass through, and the reinforcing elements 70A and 70B are jointly configured to construct a continuous structure in a direction generally parallel to the active surface of the photonic assembly 20 (e.g., the x-axis), thus significantly increasing the structural strength of the entire photonic assembly 20. Therefore, reinforcing elements 70A and 70B enable both transmission of the optical signal L1 and reduction of warpage, thereby enabling wafer-level photoelectric inspection, improving optical alignment, and increasing the reliability of the package structure.
[0069] Figure 3 This is a cross-section of a package structure 3 arranged according to some of the present disclosure. Package structure 3 is similar to package structure 1C, and the differences between them are described below.
[0070] In some arrangements, the encapsulation 90 defines a recess 600C that exposes the optical channel 240 of the photonic component 20. In some arrangements, the optical signal L1 transmitted from the optical channel 240 can be emitted from the encapsulation structure 3 without being blocked by the encapsulation 90.
[0071] According to some arrangements of this disclosure, the optical signal L1 can be transmitted horizontally through the optical channel 240 exposed by the recess 600C of the encapsulation 90. When power is supplied from the substrate 1000 below and heat is dissipated upwards through the thermal channel TC1, there is almost no space for vertical transmission of the optical signal. However, with the above design, optical transmission can be achieved with a relatively simple structure without having to arrange multiple optical transmission components into the package structure.
[0072] Figure 4A , Figure 4B , Figure 4C , Figure 4D , Figure 4E , Figure 4F , Figure 4G , Figure 4H , Figure 4I , Figure 4J , Figure 4K , Figure 4L and Figure 4M The following describes the various stages of an exemplary method for manufacturing a package structure 1B according to some embodiments of the present disclosure.
[0073] refer to Figure 4AA wafer-level reinforcing element 70B' can be provided, comprising a pad 730 and a metal layer 97A formed on its surface. In some arrangements, the thickness of the metal layer 97A is less than the thickness of the pad 730. In some arrangements, the metal layer 97A may be or comprise a metallic material having a relatively low melting point. In some arrangements, the melting point of the metal layer 97A is lower than the melting point of the pad 730. The melting point of the metal layer 97A may be lower than 260°C, 200°C, 150°C, 130°C, or 100°C. The pad 730 may be or comprise Au, Ag, Al, Cu, Ni, or alloys thereof. The metal layer 97A may be or comprise gallium (Ga), indium (In), In-Sn alloys, or alloys thereof.
[0074] refer to Figure 4B It can provide a wafer-level electronic component 30' including a dielectric layer 310d and conductive pads 310 and 320, and can provide a wafer-level reinforcing element 70A' including a dielectric layer 710d. The conductive pad 310 may be referred to as a via or pillar.
[0075] refer to Figure 4C A wafer-level photonic assembly can be provided, comprising a substrate layer 200A, conductive pads 210 and 220, barrier layers 212 and 222, conductive layers 210c, 220c and 211, a conductive via 20V, an optical channel 240A, and dielectric layers 261, 262 and 263, and an electrical contact 91 can be disposed on the conductive pad 220. The aforementioned wafer-level structure can be disposed above a carrier 4100, wherein the electrical contact 91 is embedded in a gel layer 4200 on the carrier 4100. The carrier 4100 can be a rigid carrier configured to support the wafer-level photonic assembly, and the gel layer 4200 is configured to provide stress buffering and accommodating space for the electrical contact 91. In some arrangements, a single-splitting operation can be performed on the wafer-level electronic component 30' to form a plurality of electronic components 30, and a single-splitting operation can be performed on the wafer-level reinforcing element 70A' to form a plurality of reinforcing elements 70A, wherein the electronic components 30 and the reinforcing elements 70A are disposed above and connected to the wafer-level photonic component.
[0076] refer to Figure 4DA single-step operation can be performed on the wafer-level reinforcing element 70B' to form a plurality of reinforcing elements 70B, which can be disposed above and connected to the electronic component 30 and the reinforcing element 70A. In some arrangements, a metal layer 97A on the pad 730 can be connected to the conductive pads 320 and 720 to connect the reinforcing element 70B to the electronic component 30 and the reinforcing element 70A. In some arrangements, a heat treatment can be performed to melt the metal layer 97A and allow the molten metal layer 97A to form connecting elements 97, each connecting element being formed of an alloy layer or an IMC layer to bond the pad 730 to the conductive pads 320 and 720. The heat treatment can be performed at temperatures below 260°C, 200°C, 150°C, 130°C, or 100°C. The melting point of the formed connecting element 97 may be higher than the melting point of the metal layer 97A, the melting point of the solder material, the melting point of the pad 720, the melting point of the pad 730 and / or the melting point of the conductive pad 320.
[0077] refer to Figure 4E , Figure 4D The structure described herein can be positioned above strip 4300 and can be used for single-splitting operations to form multiple photonic components 20. Gel layer 4200 and carrier 4100 can be removed.
[0078] refer to Figure 4F The 4300 band can be removed after a single split operation. In some layouts, Figure 4E Each of the single-component structures described herein may be positioned above and supported by a carrier or tray. Reinforcing elements 70A and 70B provide support to increase the structural strength of the photonic assembly 20 in order to reduce warping of the photonic assembly 20.
[0079] refer to Figure 4G and Figure 4H , Figure 4G Display along Figure 4H The cross-section of line 4G-4G' in the middle. Electronic components 50 and 50M and photonic component 20 can be connected to wafer-level substrate 10A via electrical contact 91.
[0080] refer to Figure 4I and Figure 4J , Figure 4I Display along Figure 4JThe cross-section of line 4I-4I' is shown. The optical guiding assembly 40 can be connected to the photonic assembly 20 via the connection structure 80. In some arrangements, multiple optical gels can be applied over portions of the wafer-level substrate 10A and the photonic assembly 20, the optical guiding assembly 40 can be disposed over and partially extend into the optical gel, and the optical gel can be cured to form the connection structure 80. In some arrangements, the optical guiding assembly 40 can be formed using nanoimprinting technology with sol-gel glass or transparent polymer materials. In some arrangements, the optical guiding assembly 40 can be formed to provide multiple glass portions, each having a predetermined shape, which are then assembled together. The predetermined shapes of the glass portions can be formed by etching.
[0081] refer to Figure 4K Encapsulation 90A may be disposed or formed on wafer-level substrate 10A to encapsulate photonic component 20, electronic components 50 and 50M, optical guidance component 40 and connection structure 80.
[0082] refer to Figure 4L A polishing operation can be performed to partially remove the encapsulation 90A to expose the surfaces (e.g., surfaces 401, 502, and 701) of the optical guide assembly 40, electronic components 50 and 50M, and reinforcing element 70B, forming a surface 901 of the encapsulation 90A that is substantially aligned with surfaces 401, 502, and 701. Next, an anti-reflective element 430 can be formed on surface 401 of the optical guide assembly 40.
[0083] Still referencing Figure 4L After the anti-reflection element 430 is formed, the optical signal from the optical channel 240 of the photonic component 20 can be changed from being transmitted generally horizontally to being transmitted generally vertically after passing through the optical guide assembly 40, so as to optically couple to an optical inspection tool above the optical guide assembly 40. Figure 4L The wafer-level structure described herein performs photoelectric inspection. The photoelectric inspection may include, or may include, detecting the amount of optical coupling via vertical coupling. In some arrangements, this can be achieved by allowing electrical signals from electronic component 50 to be transmitted through conductive vias 10V of the wafer-level substrate 10A to electrical contacts 10c for electrical coupling to an electrical inspection tool. Figure 4L The wafer-level structure described herein undergoes electrical inspection. Therefore, the structural design and its manufacturing process allow for both photoelectric and electrical inspections to be performed on the wafer-level structure.
[0084] refer to Figure 4M After performing photoelectric and electrical inspections, the following can be done: Figure 4LThe wafer-level structure described herein performs a splitting operation to form multiple split structures. These split structures can be connected to the substrate 1000 via electrical contacts 10c, and the thermal cooling assembly 92 can be connected to the encapsulant 90 via thermally conductive adhesive 94. Thus, a wafer-level structure can be formed... Figure 1C and 1D The packaging structure 1C is described in the document.
[0085] Figure 5A , Figure 5B , Figure 5C , Figure 5D , Figure 5E , Figure 5F , Figure 5G , Figure 5H and Figure 5I This describes the various stages of an exemplary method for manufacturing a package structure 2A according to some arrangements of this disclosure.
[0086] refer to Figure 5A A wafer-level photonic assembly can be provided, comprising a substrate layer 200A, conductive pads 210 and 220, conductive layers 210c, 220c and 211, a conductive via 20V, an optical channel 240A, and dielectric layers 261, 262 and 263, and an electrical contact 91 can be disposed on the conductive pad 220. The aforementioned wafer-level structure can be disposed above a carrier 4100, wherein the electrical contact 91 is embedded in a gel layer 4200 on the carrier 4100. The carrier 4100 can be a rigid carrier configured to support the wafer-level photonic assembly, and the gel layer 4200 is configured to provide stress buffering and accommodating space for the electrical contact 91.
[0087] Still referencing Figure 5A A recess 261C may be formed within a dielectric layer 261d, a reflective element 280 may be formed on a side surface 261s1 within the recess 261C, and an optical coupling portion 290 may be formed within the recess 261C. In some arrangements, the recess 261C is formed by etching. In some arrangements, the reflective element 280 may be formed by depositing or plating a metal layer on the side surface 261s1 within the recess 261C. In some arrangements, the optical coupling portion 290 may be formed by applying an optical gel into the recess 261C and then curing the optical gel. The optical gel may have relatively high fluidity to allow the optical gel to have a generally flat top surface. In some arrangements, the optical coupling portion may be formed by depositing a dielectric material in the recess 261C to form a dielectric layer in the recess 261C, and then performing a planarization operation to remove portions of the dielectric layer to form an optical coupling portion 290 having a top surface substantially aligned with the top surface of the dielectric layer 261.
[0088] refer to Figure 5BThe barrier layers 212 and 222 can be formed on the conductive pad 210, and can be split into multiple electronic components 30 and multiple reinforcing elements 70A' can be split into multiple reinforcing elements 70A. The electronic components 30 and reinforcing elements 70A are disposed above the wafer-level photonic component and connected to the wafer-level photonic component.
[0089] refer to Figure 5C Executable and Figure 4D The operation described herein is similar to that described above, in order to connect multiple reinforcing elements 70B to electronic assembly 30 and reinforcing element 70A.
[0090] refer to Figure 5D , Figure 5C The structure described herein can be positioned above strip 4300 and can be used for single-splitting operations to form multiple photonic components 20. Gel layer 4200 and carrier 4100 can be removed.
[0091] refer to Figure 5E Executable and Figure 4G and 4H The operation is similar to that described in the diagram, in order to connect electronic components 50 and 50M and photonic component 20 to wafer-level substrate 10A via electrical contact 91.
[0092] refer to Figure 5F Executable and Figure 4K The operation described herein is similar to that described above, forming an encapsulation 90A over a wafer-level substrate 10A to encapsulate the photonic component 20 and electronic components 50 and 50M.
[0093] refer to Figure 5G It can perform grinding operations and Figure 4L The operation described herein is similar to that described above, in order to partially remove the encapsulation 90A to expose the surfaces of electronic components 50 and 50M and reinforcing element 70B, and to perform photoelectric and electrical inspections on the wafer-level structure.
[0094] refer to Figure 5H The lens 70L can be formed on the surface 701 of the reinforcing element 70B. In some arrangements, the lens 70L can be formed by etching.
[0095] refer to Figure 5I Executable and Figure 4M The operation described herein is similar to that used to form multiple discrete structures. These discrete structures are connected to the substrate 1000 via electrical contacts 10c, and the thermal cooling assembly 92 is connected to the encapsulation 90 via thermally conductive adhesive 94. Thus, a [structure / form] can be formed. Figure 2A and 2B The packaging structure 2A is described in the document.
[0096] Figure 6A , Figure 6B , Figure 6C , Figure 6D , Figure 6E and Figure 6F The various stages of an exemplary method for manufacturing a package structure 3 according to some embodiments of the present disclosure are described.
[0097] refer to Figure 6A Executable and Figures 4A to 4H The operation is similar to that described in the diagram, in order to connect electronic components 50 and 50M and photonic component 20 to wafer-level substrate 10A via electrical contact 91.
[0098] refer to Figure 6B The sacrificial structure 600 may be disposed above the wafer-level substrate 10A to cover the optical channel 240 of the photonic component 20. In some arrangements, the sacrificial structure 600 comprises a gel.
[0099] refer to Figure 6C Executable and Figure 4K The operation described herein is similar to that described above, forming an encapsulation 90A over a wafer-level substrate 10A to encapsulate the photonic component 20, electronic components 50 and 50M, and the sacrificial structure 600.
[0100] refer to Figure 6D It can perform grinding operations and Figure 4L The operation described herein is similar to that described above, to partially remove the encapsulation 90A to expose the surfaces of electronic components 50 and 50M and reinforcing element 70B, and to perform a single-splitting operation to cut through the sacrificial structure 600 to form multiple single-splitting structures.
[0101] refer to Figure 6E The sacrificial structure 600 of the single-splitting structure can be removed to form the recess 600C of the exposed optical channel 240.
[0102] refer to Figure 6F , Figure 6E The single-segment structure described herein can be connected to the substrate 1000 via electrical contact 10c. Thus, a single-segment structure can be formed. Figure 3 The encapsulation structure described in section 3.
[0103] Unless otherwise specified, spatial descriptions such as “above,” “below,” “up,” “left,” “right,” “lower,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “above,” “below,” “upper,” “above,” and “below” are relative to the orientation shown in the figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and embodiments of the structures described herein can be arranged in space in any orientation or manner, provided that the advantages of the embodiments of this disclosure are not compromised by such arrangement.
[0104] As used herein, the terms “approximately,” “substantially,” “roughly,” and “about” are used to describe and explain minor variations. When used in conjunction with an event or situation, these terms may refer to examples where the event or situation occurred precisely or very approximately. For example, when used in conjunction with a numerical value, these terms may refer to a range of variation less than or equal to ±10% of the stated value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a first value is within a range of variation less than or equal to ±10% of a second value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the first value may be considered “substantially” the same as or equal to the second value. For example, "roughly" vertical can refer to an angle variation of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.
[0105] If the displacement between two surfaces is no greater than 5 µm, 2 µm, 1 µm, or 0.5 µm, then the two surfaces are considered coplanar or substantially coplanar. If the displacement between the highest and lowest points of a surface is no greater than 5 µm, 2 µm, 1 µm, or 0.5 µm, then the surface is considered substantially flat.
[0106] As used herein, unless the context clearly indicates otherwise, the singular forms “a / an” and “the” may contain a plural number of indicators.
[0107] As used herein, the terms “conductive,” “electrically conductive,” and “conductivity” refer to the ability to conduct electric current. Conductive materials are generally defined as materials that exhibit very little or no resistance to the flow of electric current. A unit of measurement for conductivity is Siemens per meter (S / m). Typically, conductive materials have a conductivity greater than approximately 10. 4 S / m, for example, at least 10 5 S / m or at least 10 6A material with conductivity of S / m. The conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.
[0108] In addition, quantities, ratios, and other numerical values are sometimes presented in range format in this document. It should be understood that such range format is used for convenience and brevity, and should be flexibly interpreted as including not only the numerical values explicitly specified as the limits of the range, but also all individual numerical values or subranges covered within the range, as if each numerical value and subrange were explicitly specified.
[0109] While this disclosure has been described and illustrated with reference to specific embodiments thereof, such descriptions and illustrations are not limiting. Those skilled in the art will understand that various changes and alternative equivalents may be made without departing from the true spirit and scope of this disclosure as defined by the appended claims. Illustrations may not be drawn to scale. Due to manufacturing processes and tolerances, the process reproduction in this disclosure may differ from actual equipment. Other embodiments may exist that are not specifically described in this disclosure. The description and drawings should be considered illustrative rather than limiting. Modifications may be made to suit particular circumstances, materials, compositions, methods, or processes to the objectives, spirit, and scope of this disclosure. All such modifications are considered to be included within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a particular order, it should be understood that these operations may be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of this disclosure. Therefore, unless specifically indicated herein, the order and grouping of operations are not a limitation of this disclosure.
Claims
1. A packaging structure comprising: Photonic components; An optical guidance component is disposed outside the photonic component and configured to change the transmission direction of optical signals from the photonic component; as well as A connection structure that connects the optical guiding component to the photonic component and is configured to reduce scattering of the optical signal during transmission.
2. The packaging structure according to claim 1, wherein the optical guiding component is disposed on the lateral side of the photonic component and configured to switch the transmission direction between a generally horizontal direction and a generally vertical direction.
3. The packaging structure of claim 1, wherein the optical guiding component includes a reflective surface configured to reflect the optical signal to change the transmission direction.
4. The packaging structure of claim 3, wherein the optical guiding component includes a reflective layer defining the reflective surface.
5. The packaging structure of claim 1, wherein the optical guidance component includes a switching portion and a transmission portion, the switching portion including a lens facing an optical channel of the photonic component, and the transmission portion being configured to transmit the optical signal upward from the switching portion.
6. The packaging structure according to claim 5, wherein the switching portion is embedded in the connection structure.
7. The packaging structure of claim 5, wherein the switching portion further includes a reflective element configured to reflect the optical signal transmitted through the lens.
8. The packaging structure of claim 5, further comprising an encapsulant encapsulating the photonic component, the optical guidance component, and the connection structure, wherein the surface of the optical guidance component is exposed by the encapsulant.
9. The packaging structure of claim 8, wherein the transmission portion includes an anti-reflective element on the surface of the optical guidance assembly.
10. The encapsulation structure of claim 1, wherein the connection structure comprises an optical gel and has an irregular profile when viewed from a cross-sectional view.
11. A packaging structure comprising: Photonic components, including optical channels; Optical guidance components; as well as An encapsulation that encapsulates the photonic component and the optical guiding component, wherein the optical guiding component is configured to guide optical signals from the optical channel along an optical path embedded in the encapsulation and emitted from the encapsulation.
12. The packaging structure of claim 11, wherein the photonic component includes a dielectric layer covering the optical channel, and a portion of the optical channel is exposed by the dielectric layer and contacts the optical guiding component.
13. The packaging structure of claim 12, wherein the optical guiding component includes an optical coupling portion and a reflective layer located in a recess defined by the dielectric layer.
14. The packaging structure of claim 13, wherein the reflective surface defined by the reflective layer is inclined relative to the top surface of the dielectric layer.
15. The encapsulation structure of claim 11, further comprising a thermal cooling assembly covering the encapsulation and a thermally conductive adhesive between the encapsulation and the thermal cooling assembly, wherein, from a top view perspective, the thermally conductive adhesive is partially exposed by an opening in the thermal cooling assembly.
16. The packaging structure according to claim 11, further comprising: Substrate; Multiple photonic components are disposed above the substrate; Multiple optical guiding components are optically coupled to the multiple photonic components; as well as Multiple optical islands are disposed above the substrate and connect the multiple optical guiding components to the multiple photonic components.
17. An optical guidance element, comprising: A reflective element, which is fixedly coupled to the optical channel of a photonic component via an integrated alignment structure, wherein the optical guiding element is configured to redirect, focus, or diffuse an optical signal based on a predetermined distribution profile of the optical guiding element.
18. The optical guiding element of claim 17, wherein the integrated alignment structure includes optical fasteners and lenses with different refractive indices, and the reflecting element is disposed outside the photonic assembly and spaced apart from the optical channel of the photonic assembly by the optical fasteners and the lens.
19. The optical guiding element of claim 17, wherein the reflecting element is embedded in the photonic assembly.
20. The optical guiding element of claim 19, wherein the integrated alignment structure includes an optical laminate above the reflective element and connecting the dummy die to the photonic assembly.
