An ICP plasma stripping device for wafer photoresist removal

Abstract

This invention discloses an ICP plasma resist removal device for wafer photoresist removal, applied in the field of plasma resist removal technology. The device uniformly introduces process gas into a vacuum chamber through a gas distribution ring and an array of annularly distributed air inlets, effectively covering the wafer surface and improving resist removal uniformity. Furthermore, three air inlet lines, in conjunction with a PLC controller, enable flexible switching of process gas and closed-loop vacuum control, ensuring a stable and reliable resist removal process. Building upon this, the area containing the air inlets is designed as a rotatable micro-motion coil. Through the alternating cooperation of an electromagnetically driven micro-motion plate and a drive plate, the micro-motion coil reciprocates at small angles, changing the air inlet direction from fixed to dynamic. This continuous disturbance and diffusion of the process gas within the chamber significantly improves the uniformity of gas-wafer contact, further enhancing resist removal quality. Moreover, the micro-motion components are integrated within the gas distribution groove, requiring no additional space and facilitating upgrades to existing equipment.

Description

Technical Field

[0001] This invention relates to the field of plasma resist removal technology, and in particular to an ICP plasma resist removal device for removing photoresist from wafers. Background Technology

[0002] Inductively coupled plasma (ICP) photoresist removal is a key technique in semiconductor manufacturing. It utilizes a radio frequency (RF) power supply to apply a high-frequency current to an induction coil, generating a high-frequency electromagnetic field within a vacuum chamber. This ionizes the process gas, forming a high-density plasma. The active free radicals in the plasma chemically react with the photoresist on the wafer surface, generating volatile substances that are then expelled by the vacuum system, thus removing the photoresist. Compared to capacitively coupled plasma, inductively coupled plasma allows for independent control of plasma density and ion bombardment energy, offering significant advantages in process control.

[0003] In existing designs of ICP plasma resist removal devices, process gases typically enter the gas mixing chamber through a single inlet at the top. After mixing, the gases are distributed through a gas distribution plate or gas distribution plate before entering the reaction chamber. For example, utility model patent CN220041777U discloses an inductively coupled plasma wafer resist removal system, which uses an inlet device at the top of the plasma generation chamber to allow process gases to form plasma, which is then filtered by a gas distribution plate before reaching the wafer surface. Utility model patent CN222088519U also discloses a plasma inductively coupled resist removal device, including an inlet device, a plasma production chamber, a gas distribution device, and a resist removal reaction chamber.

[0004] However, in the aforementioned existing solutions, the positions of the gas distribution plate and the gas inlet are relatively fixed, and the process gas enters the reaction chamber in a fixed direction after passing through the gas distribution plate. This fixed gas inlet method has two shortcomings: First, the airflow distribution path within the chamber is singular, which easily leads to uneven distribution of gas concentration and plasma density in different areas of the wafer surface, resulting in a faster removal rate in the middle and slower at the edges; second, the fixed gas inlet setting ensures that the coverage angle and impact direction of the process gas on the wafer surface remain unchanged, making it difficult to promote uniform gas diffusion within the reaction chamber through airflow disturbance, thus limiting further improvement in the uniformity of the removal process. Existing technologies have attempted to improve the uniformity of gas distribution by using a staggered arrangement of multi-layer porous mesh plates, and there are also solutions to optimize the gas flow distribution on the wafer surface by designing the shielding and ventilation parts of the gas regulating plate. However, these solutions are all based on static structural optimization and fail to solve the problem of limited gas distribution caused by the fixed gas inlet direction. Summary of the Invention

[0005] The core of this invention lies in the fact that this solution uses a gas distribution ring and an array of gas inlets to uniformly introduce process gas into the vacuum chamber, so that the gas evenly covers the wafer surface and improves the uniformity of resist removal; the cooling water pipe removes the heat generated by the coil operation, ensuring continuous and stable operation of the equipment; and three gas inlet pipelines for air, oxygen, and nitrogen are set up, which can flexibly switch the gas supply according to the process stage, and work with the PLC controller to realize closed-loop control of vacuum degree, ensuring a stable and reliable resist removal process.

[0006] To solve the above problems, the present invention adopts the following technical solution.

[0007] An ICP plasma resist removal device for wafer photoresist removal includes a housing, an inner vacuum chamber, and a door mounted on the housing that matches the opening of the vacuum chamber. Support bars are fixedly connected to the left and right inner walls of the vacuum chamber, and a support platform is placed above the support bars on which the wafer is placed. A control system is also housed within the housing, including a touchscreen at the front of the housing, a PLC controller, and a data recording unit within the PLC controller. The housing also contains a plasma source assembly, a gas distribution system, and a vacuum system. The plasma source assembly includes components located at the bottom of the housing. The system includes a radio frequency power supply, an induction coil wound around the outside of the vacuum chamber, and two insulating rings fixedly connected to the outside of the vacuum chamber. The induction coil is located between the two insulating rings and is electrically connected to the radio frequency power supply. The gas distribution system includes three air inlet pipes located on the back of the equipment housing, a gas mixing chamber located inside the equipment housing, and a gas guide pipe fixedly connected to the end of the gas mixing chamber away from the air inlet pipes. The gas distribution system also includes a gas distribution ring sleeved on the outer end of the vacuum chamber near the door. The gas guide pipe is fixedly connected to the gas distribution ring. A gas distribution groove is opened in the inner ring of the gas distribution ring. Multiple air inlets are opened on the vacuum chamber in a ring array, and the multiple air inlets are corresponding to the gas distribution grooves. The vacuum chamber has an exhaust port at the end away from the door. The vacuum system includes an exhaust pipe installed at the end of the exhaust port of the vacuum chamber, as well as a vacuum pump and pressure sensor installed on the exhaust pipe. The plasma source assembly, vacuum system, and gas distribution system are all connected to the PLC controller.

[0008] Furthermore, the induction coil has a hollow copper spiral structure, and the surface of the induction coil is plated with a silver high-temperature resistant conductive coating.

[0009] Furthermore, a cooling water pipe is also installed inside the induction coil, with both ends of the cooling water pipe circulated and connected to an external cold source. One intake pipe is connected to the outside air, the second intake pipe is connected to the oxygen source, and the third intake pipe is connected to the nitrogen source. The mixing ratio of oxygen and nitrogen is 8-12:1. Mass flow controllers are installed on the two intake pipes connected to the oxygen source and the nitrogen source.

[0010] Optionally, a micro-moving coil is coaxially assembled in the middle of the vacuum chamber, with multiple air inlets located on the micro-moving coil, and the axial span of the micro-moving coil is smaller than the axial span of the air distribution groove.

[0011] Furthermore, a micro-motion assembly is provided between the outer wall of the micro-moving coil and the inner wall of the air distribution groove. The micro-motion assembly includes multiple micro-moving plates fixedly connected to the outer wall of the micro-moving coil and multiple driving plates fixedly connected to the inner wall of the air distribution groove.

[0012] Furthermore, the number of driving plates is twice the number of micro-moving plates, and multiple micro-moving plates correspond to multiple driving plates at intervals. The distribution range of multiple micro-moving plates and driving plates along the circumferential direction is not less than the circumferential range occupied by three consecutive air inlets.

[0013] Furthermore, the drive plate includes a positioning plate fixedly connected to the air distribution groove and two self-resetting plates respectively connected to the positioning plate by torsion springs, with the micro-motion plate in contact with the corresponding self-resetting plate.

[0014] Furthermore, the micro-motion piece is made of magnetic material, while the self-resetting piece is made of electromagnetic material.

[0015] Furthermore, the two self-resetting plates do not contact each other, and the distance between their central axes is greater than the width of the micro-motion plate, and the ends of the micro-motion plate are misaligned with the positioning plate.

[0016] Compared with the prior art, the advantages of this invention are: (1) This scheme introduces the process gas into the vacuum chamber evenly through the gas distribution ring and the air inlet holes distributed in the ring array, so that the gas evenly covers the wafer surface and improves the uniformity of desizing; the cooling water pipe carries away the heat generated by the coil operation, ensuring the continuous and stable operation of the equipment; three gas inlet pipelines for air, oxygen and nitrogen are set up, and the gas supply can be flexibly switched according to the process stage. In conjunction with the PLC controller, the vacuum degree closed-loop control is realized to ensure the stability and reliability of the desizing process.

[0017] (2) The area where the air inlet is located is set as a rotatable micro-moving ring. The micro-moving plate driven by electromagnetic and the driving plate work together alternately to make the micro-moving ring rotate back and forth at a small angle. The position of the air inlet changes dynamically, and the process gas changes from fixed direction air inlet to rotational dynamic air inlet, which significantly improves the uniformity of gas contact with the wafer. Moreover, the micro-moving component is integrated in the gas distribution groove, which does not occupy additional space, and the original equipment structure is modified little, which is convenient for upgrading and transforming the existing equipment. Attached Figure Description

[0018] Figure 1 This is a perspective view of the hatch of the present invention when it is open; Figure 2 This is a perspective view of the hatch of the present invention when it is closed; Figure 3 This is a top view of the present invention; Figure 4 This is a three-dimensional schematic diagram of the vacuum chamber and its external structure of the present invention; Figure 5 This is a perspective view of the air distribution ring of the present invention; Figure 6 This is a perspective view of the vacuum chamber according to the second embodiment of the present invention; Figure 7 This is a half-sectional schematic diagram of the air distribution ring according to the second embodiment of the present invention; Figure 8 This is a cross-sectional schematic diagram of the contact portion between the gas distribution ring and the vacuum chamber of the present invention; Figure 9 This is a schematic diagram showing the arrangement of the micro-motion components of the present invention; Figure 10 This is a schematic diagram of the micro-motion piece and the driving piece in contact. Figure 11 This is a three-dimensional schematic diagram of the driving chip of the present invention; Figure 12 This is a schematic diagram of the micro-motion piece driving the drive piece to rotate partially according to the present invention.

[0019] Explanation of the labels in the diagram: 11 Equipment casing, 12 Cabin door, 2 Touch screen, 31 Bearing platform, 32 Support bar, 4 Vacuum chamber, 41 Micro-moving coil, 51 Insulating ring, 52 Radio frequency power supply, 53 Induction coil, 61 Inlet pipe, 62 Gas mixing chamber, 63 Air guide pipe, 64 Air distribution ring, 601 Air distribution groove, 602 Inlet hole, 603 Exhaust pipe, 64 Pressure sensor, 71 Micro-moving piece, 72 Drive piece, 721 Positioning plate, 722 Self-resetting piece. Detailed Implementation

[0020] The technical solutions will now be clearly and completely described with reference to the accompanying drawings in the embodiments of the present invention.

[0021] First implementation method: like Figures 1-3In the figure, 'a' represents a wafer. An ICP plasma resist removal device for wafer photoresist removal includes a housing 11, inside which is a vacuum chamber 4 made of transparent glass. A door 12 is installed on the housing 11, matching the opening of the vacuum chamber 4. Support bars 32 are fixedly connected to the left and right inner walls of the vacuum chamber 4. A support platform 31 is placed above the two support bars 32, and the wafer is placed on the support platform 31. It is worth noting that, in order to improve the uniformity of resist removal, a rotatable stage is set on the support platform 31, and a heating element is set inside the stage to increase the wafer temperature and accelerate the chemical reaction rate between the photoresist and the plasma. This part is prior art and therefore not described in detail. In specific implementation, the settings can be selected according to actual needs.

[0022] The equipment housing 11 also houses a control system, which includes a touch screen 2 located at the front of the equipment housing 11, a PLC controller, and a data recording unit mounted in the PLC controller. The equipment housing 11 also houses a plasma source assembly, a gas distribution system, and a vacuum system. The touch screen 2 allows users to set process parameters, including RF power, gas flow rate, vacuum level, heating temperature, and adhesive removal time, and displays the equipment's operating status. The data recording unit records process parameters and operating data for easy data traceability.

[0023] The plasma source assembly includes a radio frequency power supply 52 located at the bottom of the device housing 11, an induction coil 53 wound around the outside of the vacuum chamber 4, and two insulating rings 51 fixedly connected to the outside of the vacuum chamber 4. The induction coil 53 is a hollow copper spiral structure, and the surface of the induction coil 53 is plated with a silver high-temperature resistant conductive coating. The induction coil 53 is located between the two insulating rings 51 and is electrically connected to the radio frequency power supply 52. ​​In specific implementation, the power of the radio frequency power supply 52 can be adjusted according to the adhesive removal requirements. In addition, an insulating protective layer can be wrapped around the induction coil 53 to protect it from being broken down by the plasma.

[0024] It is worth noting that a cooling water pipe is also installed inside the induction coil 53. The two ends of the cooling water pipe are circulated and connected to an external cold source. During use, the cooling medium (such as deionized water) can be circulated in the cooling water pipe by a water pump, thereby effectively removing the heat generated during the operation of this adhesive removal device, controlling the cavity temperature and coil temperature below the upper limit of the safe temperature, and effectively ensuring that this adhesive removal device can continuously and stably carry out adhesive removal work.

[0025] like Figure 3The gas distribution system includes three air inlet pipes 61 located on the back of the equipment housing 11, a gas mixing chamber 62 located inside the equipment housing 11, and a gas guide pipe 63 fixedly connected to the end of the gas mixing chamber 62 away from the air inlet pipes 61. One air inlet pipe 61 is connected to the outside air, the second air inlet pipe 61 is connected to an oxygen source, and the third air inlet pipe 61 is connected to a nitrogen source. The mixing ratio of oxygen and nitrogen is 8-12:1. Mass flow controllers are installed on the two air inlet pipes 61 connected to the oxygen source and the nitrogen source, respectively. The amount of oxygen and nitrogen introduced can be precisely controlled by the mass flow controllers so that the two can be accurately mixed in the target ratio.

[0026] like Figure 4 and Figure 5 The gas distribution system also includes a gas distribution ring 64 fitted onto the outer end of the vacuum chamber 4 near the door 12. A gas guide pipe 63 is fixedly connected to the gas distribution ring 64. A gas distribution groove 601 is formed on the inner ring of the gas distribution ring 64. Multiple air inlets 602 are arranged in a ring array on the vacuum chamber 4. The multiple air inlets 602 correspond to the gas distribution grooves 601. During the adhesive removal process, oxygen and nitrogen are introduced through two of the air inlets 61, with a mixing ratio of 8-12:1 (preferably 10:1). The gas enters the gas mixing chamber 62 and mixes thoroughly. Then, the mixed gas enters the gas distribution groove 601 in the gas distribution ring 64 along the gas guide pipe 63, and finally is evenly introduced into the vacuum chamber 4 along multiple air inlets 602, so that the mixed gas can evenly cover the wafer surface, and the wafer can be uniformly and stably de-adhesive-free. After the de-adhesive-free process is completed, air can be introduced into the vacuum chamber 4 through the air inlet pipe 61, which is connected to the air, so that the air pressure inside the vacuum chamber 4 can rise back to atmospheric pressure, so that the door 12 can be opened to remove the de-adhesive-free wafer.

[0027] like Figure 3 The vacuum chamber 4 has an exhaust port at the end away from the door 12. The vacuum system includes an exhaust pipe 603 installed at the end of the exhaust port of the vacuum chamber 4, as well as a vacuum pump and a pressure sensor 604 installed on the exhaust pipe 603. The plasma source assembly, the vacuum system, and the gas distribution system are all connected to the PLC controller. After the mixed gas enters the vacuum chamber 4, the gas reacts with the adhesive on the wafer surface and can be discharged out of the vacuum chamber 4 through the exhaust port. The vacuum pump of the vacuum system can be started to extract the gas and discharge it outward along the exhaust pipe 603. The pressure sensor 604 is used to monitor the vacuum level inside the vacuum chamber 4 in real time and feed the signal back to the control system to realize closed-loop control of the vacuum level.

[0028] This solution uses a gas distribution ring 64 and annular array of air inlets 602 to uniformly introduce process gas into the vacuum chamber 4, ensuring uniform gas coverage of the wafer surface and improving the uniformity of resist removal. Cooling water pipes remove the heat generated by the induction coil 53, ensuring continuous and stable operation of the equipment. Three gas inlet pipes 61 for air, oxygen, and nitrogen are provided, allowing for flexible switching of gas supply according to the process stage. In conjunction with the PLC controller, closed-loop control of the vacuum level is achieved, ensuring a stable and reliable resist removal process.

[0029] Second implementation method: This embodiment is based on the first embodiment, but the area where the multiple air inlets 602 are located is separated from the vacuum chamber 4, while the rest remains the same as the first embodiment.

[0030] like Figure 6 A micro-moving coil 41 is coaxially assembled in the middle of the vacuum chamber 4, and the micro-moving coil 41 is rotatably connected to the vacuum chamber 4. Multiple air inlets 602 are located on the micro-moving coil 41. Figures 7-8 Furthermore, the axial span of the micro-moving coil 41 is smaller than the axial span of the gas distribution groove 601, effectively ensuring that the gas distribution ring 64 located outside the vacuum chamber 4 can completely cover the multiple air inlets 602. When the mixed process gas (a mixture of oxygen and nitrogen) enters the gas distribution groove 601, it can fully enter the vacuum chamber 4 along the multiple air inlets 602, effectively preventing process gas leakage.

[0031] like Figure 9 A micro-motion assembly is provided between the outer wall of the micro-moving coil 41 and the inner wall of the air distribution groove 601. The micro-motion assembly includes multiple micro-moving pieces 71 fixedly connected to the outer wall of the micro-moving coil 41 and multiple driving pieces 72 fixedly connected to the inner wall of the air distribution groove 601. The number of driving pieces 72 is twice the number of micro-moving pieces 71, and the multiple micro-moving pieces 71 correspond to the multiple driving pieces 72 at intervals. The circumferential distribution range of the multiple micro-moving pieces 71 and driving pieces 72 is not less than the circumferential range occupied by three consecutive air inlets 602, thereby effectively ensuring the micro-moving coil 41 The maximum rotation amplitude driven by the micro-motion component is not less than the angle between the two air inlets 602. This ensures that when the process gas enters the vacuum chamber 4, the micro-motion component drives the micro-motion coil 41 to rotate, causing multiple air inlets 602 to rotate with the micro-motion coil 41 at least the angle between two air inlets 602. This allows multiple air inlets 602 to achieve 360° uniform air intake, preventing the air inlet point from being fixed due to the fixed air inlets 602. This significantly improves the uniformity of contact between the process gas and the wafer, and enhances the uniformity of resist removal. Furthermore, during the above process, due to the rotation of the micro-motion coil 41, the orientation of the process gas entering the vacuum chamber 4 through the air inlets 602 continuously changes, causing mutual disturbance. This allows the newly entering process gas to quickly diffuse into the vacuum chamber 4, improving the resist removal effect on the wafer.

[0032] like Figures 10-12 The drive plate 72 includes a positioning plate 721 fixedly connected to the gas distribution groove 601 and two self-resetting plates 722 respectively connected to the positioning plate 721 by torsion springs. The micro-movement plate 71 is in contact with the corresponding self-resetting plate 722, but the two self-resetting plates 722 are not in contact with each other. The distance between their central axes is greater than the width of the micro-movement plate 71, and the end of the micro-movement plate 71 is misaligned with the positioning plate 721. When the micro-movement plate 71 is attracted by magnetic force and approaches the drive plate 72 and pushes the drive plate 72, the micro-movement plate 71 pushes the two self-resetting plates 722 to rotate. After they rotate to nearly 90°, the micro-movement plate 71 can pass through the gap between them and flip over the drive plate 72, so that the two sets of drive plates 72 can alternately drive the micro-moving coil 41 to reciprocate at small angles, so that the process gas can enter the vacuum chamber 4 uniformly and dynamically.

[0033] The micro-motion piece 71 is made of magnetic material, and the self-resetting piece 722 is made of electromagnetic material. Multiple driving pieces 72 can be grouped according to odd or even numbers, such as... Figure 9 In the initial state, multiple micro-motion pieces 71 correspond to the odd-numbered driving pieces 72 respectively. During the adhesive removal process, the micro-motion coil 41 is first controlled to rotate counterclockwise. At this time, the even-numbered driving pieces 72 are first controlled to receive a positive current. The self-resetting piece 722 generates a magnetic attraction force on the micro-motion piece 71 to its left and a magnetic repulsion force on the micro-motion piece 71 to its right. That is, for the same micro-motion piece 71, it is simultaneously subjected to a pulling force and a pushing force, and the two forces are in the same direction. This causes the micro-motion coil 41 to rotate between the two driving pieces 72. When the micro-motion piece 71 moves to contact the even-numbered driving pieces 72, the even-numbered driving pieces 72 are simultaneously de-energized and the odd-numbered driving pieces 72 are de-energized. When the moving plate 72 is positively energized, the self-resetting plates 722 of the odd-numbered array continue to exert attraction and pushing force on the micro-moving plate 71, just as described above. This causes the micro-moving plate 71 to push the self-resetting plates 722 of the even-numbered array, making them rotate. Consequently, the micro-moving plate 71 passes over the driving plates 72 of the even-numbered array and continues to move towards the odd-numbered array, achieving a relay-style drive for the micro-moving coil 41. When the rotation angle of the micro-moving coil 41 accumulates to the range between the two air inlets 602, the micro-moving coil 41 can be controlled to rotate clockwise. At this time, the entire operation process is still the same as described above, except that a reverse current is selected to reverse the direction of the force on the micro-moving plate 71, so that the micro-moving coil 41 gradually resets clockwise.

[0034] For ease of description, the left and right directions mentioned above are only... Figure 9 Left and right from the perspective.

[0035] Furthermore, due to the design of the torsion spring between the self-resetting plate 722 and the positioning plate 721, it has rotational capability and can automatically reset after rotation. This allows the micro-motion plate 71 to pass over the driving plate 72, after which the driving plate 72 can automatically reset and maintain its position. Figure 11The plate shape shown ensures that when energized again, it remains directly opposite the micro-motion plate 71, allowing the magnetic force generated to fully act on the micro-motion plate 71, thereby driving the micro-motion coil 41 to rotate at a small angle.

[0036] By continuously reciprocating small-angle rotation of the aforementioned micro-moving coil 41, the process gas is uniformly and dynamically introduced into the vacuum chamber 4. Furthermore, the aforementioned drive structures are all plate-shaped and concentrated within the gas distribution groove 601, requiring no additional space. Compared to motor drive, it has smaller space requirements and less impact on existing equipment.

[0037] It is worth noting that the radial length and width of the micro-motion piece 71 and the drive piece 72 are both smaller than the dimensions of the gas distribution groove 601 in the corresponding direction. This effectively ensures that the arrangement of the micro-motion piece 71 and the drive piece 72 does not easily affect the diffusion of the process gas in the gas distribution groove 601, and effectively ensures that the multiple air inlets 602 located near the micro-motion component can also stably deliver process gas into the vacuum chamber 4.

[0038] In this embodiment, the area where the air inlet 602 is located is set as a rotatable micro-moving ring 41. The micro-moving plate 71 driven by electromagnetic force and the driving plate 72 work alternately to make the micro-moving ring 41 reciprocate at a small angle, so that the position of the air inlet point changes dynamically. The process gas is changed from fixed direction air inlet to rotational dynamic air inlet, which significantly improves the uniformity of gas contact with the wafer. Moreover, the micro-moving component is integrated in the gas distribution groove 601, which does not occupy additional space, requires little modification to the original equipment structure, and is convenient for upgrading and retrofitting existing equipment.

[0039] The above description is merely a preferred embodiment of the present invention; it encompasses all the protection scope of the present invention. Any equivalent substitutions or modifications made by those skilled in the art within the technical scope disclosed in the present invention, based on the technical solutions and improved concepts of the present invention, should be covered within the protection scope of the present invention.

Claims

1. An ICP plasma resist removal device for wafer photoresist removal, comprising a housing (11), wherein a vacuum chamber (4) is disposed within the housing (11), and a door (12) is installed on the housing (11), wherein the door (12) is matched with the opening of the vacuum chamber (4), characterized in that: The left and right inner walls of the vacuum chamber (4) are fixedly connected with support bars (32). A bearing platform (31) is placed above the two support bars (32). The wafer is placed on the bearing platform (31). A control system is also provided inside the equipment housing (11). The control system includes a touch screen (2) set at the front of the equipment housing (11), a PLC controller, and a data recording unit mounted in the PLC controller. The equipment housing (11) is also provided with a plasma source assembly, a gas distribution system, and a vacuum system. The plasma source assembly includes a radio frequency power supply (52) set at the bottom of the equipment housing (11), an induction coil (53) wound around the outside of the vacuum chamber (4), and two insulating rings (51) fixedly connected to the outside of the vacuum chamber (4). The induction coil (53) is located at Between two insulating rings (51), and the induction coil (53) is electrically connected to the radio frequency power supply (52), the gas distribution system includes three air inlet pipes (61) set on the back of the equipment housing (11), a gas mixing chamber (62) located inside the equipment housing (11), and a gas guide pipe (63) fixedly connected to one end of the gas mixing chamber (62) away from the air inlet pipes (61). The gas distribution system also includes a gas distribution ring (64) sleeved on the outer end of the vacuum chamber (4) near the door (12). The gas guide pipe (63) is fixedly connected to the gas distribution ring (64). The gas distribution ring (64) has a gas distribution groove (601) in the inner ring. The vacuum chamber (4) has multiple air inlets (602) arranged in a ring array. The multiple air inlets (602) are correspondingly arranged with the gas distribution grooves (601). The vacuum chamber (4) has an exhaust port at one end away from the door (12). The vacuum system includes an exhaust pipe (603) installed at the end of the exhaust port of the vacuum chamber (4) and a vacuum pump and pressure sensor (604) installed on the exhaust pipe (603). The plasma source assembly, the vacuum system and the gas distribution system are all connected to the PLC controller signal.

2. The ICP plasma resist removal device for wafer photoresist removal according to claim 1, characterized in that: The induction coil (53) is a hollow copper spiral structure, and the surface of the induction coil (53) is plated with a silver high-temperature resistant conductive coating.

3. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 1, characterized in that: The induction coil (53) is also fitted with a cooling water pipe, and the two ends of the cooling water pipe are circulatedly connected to an external cold source. One of the air intake pipes (61) is connected to the outside air, the second air intake pipe (61) is connected to an oxygen source, and the third air intake pipe (61) is connected to a nitrogen source. The mixing ratio of oxygen and nitrogen is 8-12:

1. Mass flow controllers are installed on both air intake pipes (61) connected to the oxygen source and the nitrogen source.

4. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 1, characterized in that: The vacuum chamber (4) has a micro-moving coil (41) coaxially assembled in the middle. Multiple air inlets (602) are located on the micro-moving coil (41), and the axial span of the micro-moving coil (41) is smaller than the axial span of the air distribution groove (601).

5. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 4, characterized in that: A micro-motion assembly is provided between the outer wall of the micro-motion ring (41) and the inner wall of the air distribution groove (601). The micro-motion assembly includes multiple micro-motion pieces (71) fixedly connected to the outer wall of the micro-motion ring (41) and multiple drive pieces (72) fixedly connected to the inner wall of the air distribution groove (601).

6. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 5, characterized in that: The number of drive plates (72) is twice the number of micro-motion plates (71), and multiple micro-motion plates (71) correspond to multiple drive plates (72) at intervals, and the distribution range of multiple micro-motion plates (71) and drive plates (72) along the circumferential direction is not less than the circumferential range occupied by three consecutive air inlets (602).

7. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 6, characterized in that: The drive plate (72) includes a positioning plate (721) fixedly connected to the air distribution groove (601) and two self-resetting plates (722) respectively connected to the positioning plate (721) by torsion springs. The micro-movement plate (71) and the corresponding self-resetting plate (722) are in contact with each other.

8. The ICP plasma resist removal apparatus for wafer photoresist removal according to claim 7, characterized in that: The micro-motion piece (71) is made of magnetic material, and the self-resetting piece (722) is made of electromagnetic material.

9. An ICP plasma resist removal apparatus for wafer photoresist removal according to claim 8, characterized in that: The two self-resetting plates (722) do not contact each other, and the distance between their central axes is greater than the width of the micro-moving plate (71), and the end of the micro-moving plate (71) is misaligned with the positioning plate (721).

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