Low cost active ris enhancement system
By designing a low-cost active RIS enhancement system, and using the RIS antenna array and PIN diodes to control the phase, the problems of easy self-oscillation and low integration of existing systems are solved, realizing full-duplex signal enhancement and beam scanning, which is suitable for confined space scenarios.
Patent Information
- Application Number
- CN202611223254.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-13
- Publication Date
- 2026-11-06
AI Technical Summary
Existing active signal enhancement systems are prone to self-oscillation, power degradation, low integration, inability to achieve full-duplex operation, fixed beam control, and high cost.
It adopts a low-cost active RIS enhancement system, which includes a receiving array and a transmitting array through RIS antenna array design. It uses PIN diodes to control the radiation phase of the antenna elements, achieving high integration and realizing full-duplex operation and beam scanning.
It achieves low-power, lightweight, miniaturized, and easy-to-deploy full-duplex signal enhancement, reducing system costs, avoiding self-oscillation, and improving system integration and beam control flexibility.
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Figure CN123054124A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of artificial electromagnetic metamaterials technology, specifically relating to a low-cost active RIS enhancement system. Background Technology
[0002] Active signal enhancement systems capture weak radio frequency signals in space using a receiving antenna, filter out out-of-band clutter and other interference signals, retaining only the signal within the target frequency band, amplify the small signal using an active amplifier, and finally transmit the amplified signal using a transmitting antenna. Existing products mainly consist of four modules: an antenna subsystem, a radio frequency link, a control and protection module, and a power supply module. Depending on different needs, they can be applied in various scenarios. For example, home mobile communication active amplifiers are suitable for enhancing mobile phone signals in small to medium-sized indoor environments; Wi-Fi active repeaters are suitable for filling Wi-Fi coverage dead zones in larger homes; vehicle-mounted active signal enhancement systems are suitable for scenarios with weak signals, such as mountainous areas, tunnels, and underground garages; and engineering-grade active repeaters are suitable for large public areas.
[0003] However, existing products generally suffer from self-oscillation issues, which can lead to signal distortion, power degradation, and even equipment damage. The main reason is that the high-power signal from the transmitting antenna radiates back to the receiving antenna in space, forming a positive feedback loop. Alternatively, factors such as insufficient spacing between the transmitting and receiving antennas, inadequate isolation, and environmental reflections exacerbate this crosstalk. Furthermore, Wi-Fi repeaters significantly reduce network speed, causing severe lag when multiple devices use the service simultaneously. This is because Wi-Fi repeaters operate on a half-duplex basis; simultaneous reception and transmission on the same frequency band are not possible due to time slot separation. In addition, most products consist of independent modules, resulting in low integration and portability. The transmitting antennas are mostly fixed beams, making beam control at different angles impossible. Using high-power amplifiers would also incur significant costs. Summary of the Invention
[0004] Purpose of the invention / Technical problem This invention addresses the deficiencies and technical problems existing in the prior art by proposing a low-cost active RIS enhancement system.
[0005] Technical Solution: To achieve the above-mentioned technical objectives, the present invention is implemented through the following technical solution: a low-cost active RIS enhancement system, which is a RIS antenna array composed of antenna elements. The RIS antenna array includes a receiving array and a transmitting array located on the same plane. The receiving array and the transmitting array are each composed of a periodic array of several antenna elements. The antenna elements, from top to bottom, include a patch antenna, a first dielectric layer, a first ground layer, a second dielectric layer, a feed line layer, a third dielectric layer, a second ground layer, and a control line layer.
[0006] The patch antenna uses a slotted patch with a slotted gap in the middle, and a diode is installed between the slotted gaps;
[0007] The feed line layer is connected to the patch antenna through a metallized via, and is used to provide the patch antenna with the energy input of radio frequency signals.
[0008] The control line layer is used to switch the DC voltage across the diodes of the patch antenna, thereby changing the radiation phase of the antenna element by controlling the switching of the diodes.
[0009] Preferably, the RIS antenna array includes an uplink signal transmitting array, an uplink signal receiving array, a downlink signal transmitting array, and a downlink signal receiving array; the uplink signal transmitting array and uplink signal receiving array in the upper half are used for the uplink, and the downlink signal transmitting array and downlink signal receiving array in the lower half are used for the downlink.
[0010] Preferably, the uplink signal transmitting array, downlink signal transmitting array, uplink signal receiving array, and downlink signal receiving array are each composed of 16 antenna elements arranged in a 45° angled array.
[0011] Preferably, the patch antenna is a slotted patch, and the feeding method is SMA RF interface feeding.
[0012] Preferably, the patch antenna is a rectangular slotted patch, with notches and protrusions at its four corners and four sides. The patch also includes L-shaped slots at its four corners, forming a square frame. A PIN diode is connected between two adjacent L-shaped slots, allowing the radiation phase of the antenna element to be changed by controlling the on / off state of the PIN diodes. The patch antenna also has the following dimensional requirements:
[0013] L=(20±0.5)mm
[0014] W=(15±0.5)mm
[0015] L1 = (8 ± 0.5) mm
[0016] L2 = (3 ± 0.5) mm
[0017] w1=(0.5±0.1)mm
[0018] x1 = (1.5 ± 0.2) mm
[0019] y1=(2±0.2)mm
[0020] x2=(8±0.5)mm
[0021] y2=(2±0.2)mm
[0022] In the formula, L is the length of the slotted patch, W is the width of the slotted patch, L1 is the side length of the square frame, L2 is the length of the two sides of the L-shaped slot, w1 is the width of the L-shaped slot, x1 and y1 are the length and width of the notched corner, and x2 and y2 are the length and width of the boss.
[0023] Preferably, a dielectric layer and a third ground layer are provided between the first ground layer and the second dielectric layer for integrating extended circuitry.
[0024] Beneficial effects: Compared with the prior art, the present invention has the following advantages:
[0025] 1. This invention belongs to the field of metasurfaces and is a two-dimensional planar structure. Compared with existing active signal enhancement systems, it has a lower profile and lighter weight, which facilitates the miniaturization design of active signal enhancement systems.
[0026] 2. The working principle of this invention is simple. It only requires changing the working state of two PIN diodes to achieve 1-bit control of the phase of the radiated electromagnetic wave, which greatly reduces the circuit complexity.
[0027] 3. This invention has low power consumption, using passive PIN diodes and low-power power amplifier chips, which greatly reduces the total energy consumption of the system and is suitable for green communication applications.
[0028] 4. This invention has a high degree of integration, with the receiving array, transmitting array and power amplifier module all integrated together, greatly reducing the size of the entire system and making it easy to deploy on the surface of objects that require conformal design. Attached Figure Description
[0029] Figure 1 This is a system architecture diagram of the active RIS enhancement system described in this invention.
[0030] Figure 2 This is an exploded view of the antenna element of the active RIS enhancement system described in this invention.
[0031] Figure 3 This is a top view of the antenna element of the active RIS enhancement system described in this invention.
[0032] Figure 4 This is a schematic diagram of the active RIS array described in this invention.
[0033] Figure 5 This refers to the return loss of the active RIS array in this embodiment of the invention.
[0034] Figure 6 This refers to the port isolation of the active RIS array in this embodiment of the invention.
[0035] Figure 7 This refers to the scanning performance of the active RIS array in this embodiment of the invention.
[0036] Figure 8 This is a schematic diagram of the uplink and downlink operation modes of the active RIS enhancement system according to an embodiment of the present invention.
[0037] Figure 9 This refers to the signal enhancement performance of the power amplifier module in this embodiment of the invention.
[0038] Among them, patch antenna 1, first dielectric layer 2, first ground layer 3, second dielectric layer 4, feed line layer 5, third dielectric layer 6, second ground layer 7, control line layer 8, third ground layer 9, fourth dielectric layer 10, third ground layer 11, and diode 12. Detailed Implementation
[0039] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention. Unless otherwise specifically stated, the relative arrangement, expressions, and values of the components and steps set forth in these embodiments do not limit the scope of the present invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the accompanying drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.
[0040] For ease of description, spatial relative terms such as "above," "over," "on the upper surface of," "above," etc., are used here to describe the spatial positional relationship of a device or feature as shown in the figure with other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation besides the orientation of the device as described in the figure. For example, if the device in the figure is inverted, a device described as "above" or "above" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations).
[0041] To overcome the shortcomings of existing technologies, this invention proposes a low-cost active RIS enhancement system. The low-cost active RIS enhancement system architecture is as follows: Figure 1 As shown, the active RIS array consists of a receiving array and a transmitting array, which are connected by a power amplifier module. The receiving and transmitting arrays are placed in the same plane, and an absorbing film is placed between the two arrays to physically isolate the transmitting and receiving ends. The two arrays are connected by a power amplifier module.
[0042] The working principle of the enhancement system of this invention is roughly as follows: First, the receiving array receives the radio frequency signal from the incident angle θin, and transmits the radio frequency signal to the power amplifier module; then, the radio frequency signal is amplified by the power amplifier module and transmitted to the transmitting array; finally, the transmitting array transmits the amplified radio frequency signal to the receiving end at an angle θre. The beam pointing of the RIS array can be freely adjusted by the control board, so that the beam scanning range reaches ±60°.
[0043] like Figure 2 As shown, the active RIS antenna array of this invention consists of four layers of dielectric substrate laminated together. From top to bottom, they are a patch antenna, a ground plane, a feed line, and a control line. The feed line provides the patch antenna with the energy input of the radio frequency signal, and the control line switches the DC voltage across the surface diodes. By controlling the switching of the diodes, the radiation phase of the antenna element is changed, thereby achieving 1-bit phase control.
[0044] A schematic diagram of the active RIS array of the present invention is shown below. Figure 3 As shown, the array is divided into four parts, which can be used for receiving and transmitting uplink and downlink signals respectively. The power amplifier module contains two signal amplification links, which can amplify the uplink or downlink RF signals independently, enabling full-duplex operation.
[0045] like Figure 3 As shown, the antenna element of the active RIS antenna array of this invention is a slotted patch antenna. The purpose of slotting is to expand the impedance bandwidth of the patch antenna, and the notches and protrusions are for impedance matching. L is the length of the rectangular patch, W is the width of the rectangular patch, L1 and L2 are the dimensions corresponding to the slots, w1 is the width of the slots, x1 and y1 are the dimensions of the notches around the four sides, and x2 and y2 are the dimensions of the protrusions in the polarization direction. The specific dimensions are as follows: L=(20±0.5)mm, W=(15±0.5)mm, L1=(8±0.5)mm, L2=(3±0.5)mm, w1=(0.5±0.1)mm, x1=(1.5±0.2)mm, y1=(2±0.2)mm, x2=(8±0.5)mm, y2=(2±0.2)mm.
[0046] In this embodiment, simulation was performed using HFSS software, and the simulation results are as follows: Figure 5-7 As shown, Figure 5 As shown, the impedance bandwidth of the four ports of the active RIS array is approximately 5.57-5.86 GHz (relative bandwidth 5.1%).
[0047] like Figure 6 As shown, the isolation between the four ports of the active RIS array is generally greater than 40 dB in the 5.5-6.0 GHz band.
[0048] like Figure 7 As shown, the active RIS array can achieve beam scanning within a range of ±60°. At 5.8 GHz, the maximum normal gain is approximately 16.8 dB, and the maximum gain in the 60° scanning state is approximately 9.8 dB.
[0049] like Figure 8 As shown, the uplink and downlink are independent of each other. Within each independent link, the input and output are connected through amplifiers, filters, and isolators. The isolator can be an absorbing film placed in the middle.
[0050] like Figure 9 As shown, in the 5.5-6.0 GHz frequency band, the uplink and downlink gains of the power amplifier module are both above 25dB, and the signal enhancement effect in full-duplex mode is relatively stable.
[0051] This invention solves the problems of self-oscillation and low integration in traditional active signal enhancement systems, achieving a coplanar effect for transmitting and receiving antennas. It integrates signal enhancement and directional communication functions, making it suitable for full-duplex operating scenarios. The system shows particularly good performance in confined spaces such as underground parking lots, IoT factories, tunnels, and mines. This invention effectively reduces the power consumption and profile height of traditional active signal enhancement systems, achieving a lightweight, compact, low-power, easily deployable, and highly integrated full-duplex active RIS enhancement system design.
[0052] It should be noted that the structure described in this invention can be implemented in many different forms and is not limited to the embodiments described. Any equivalent transformations made by those skilled in the art based on the description and drawings of this invention, or direct or indirect applications in other related technical fields, such as the loading and unloading of other items, are included within the protection scope of this invention.
Claims
1. A low-cost active RIS enhancement system, characterized in that: It is a RIS antenna array composed of antenna elements. The RIS antenna array includes a receiving array and a transmitting array located on the same plane. The receiving array and the transmitting array are each composed of a periodic array of several antenna elements. The antenna element includes, from top to bottom, a patch antenna, a first dielectric layer, a first ground layer, a second dielectric layer, a feed line layer, a third dielectric layer, a second ground layer, and a control line layer. The patch antenna uses a slotted patch with a slotted gap in the middle, and a diode is installed between the slotted gaps; The feed line layer is connected to the patch antenna through a metallized via, and is used to provide the patch antenna with the energy input of radio frequency signals. The control line layer is used to switch the DC voltage across the diodes of the patch antenna, thereby changing the radiation phase of the antenna element by controlling the switching of the diodes.
2. The low-cost active RIS enhancement system according to claim 1, characterized in that: The RIS antenna array includes an uplink signal transmitting array, an uplink signal receiving array, a downlink signal transmitting array, and a downlink signal receiving array; the uplink signal transmitting array and uplink signal receiving array in the upper half are used for the uplink, and the downlink signal transmitting array and downlink signal receiving array in the lower half are used for the downlink.
3. The low-cost active RIS enhancement system according to claim 2, characterized in that: The uplink signal transmitting array, downlink signal transmitting array, uplink signal receiving array, and downlink signal receiving array are each composed of 16 antenna elements arranged in a 45° angled array.
4. The low-cost active RIS enhancement system according to any one of claims 1-3, characterized in that: The patch antenna uses a slotted patch and is powered by an SMA RF interface.
5. The low-cost active RIS enhancement system according to any one of claims 4, characterized in that: The patch antenna is a rectangular slotted patch with notches and protrusions at its four corners and four sides. The patch also includes L-shaped slots at the four corners, forming a square frame. A PIN diode is connected between two adjacent L-shaped slots, allowing the radiation phase of the antenna element to be changed by controlling the on / off state of the PIN diodes. The patch antenna also has the following dimensional requirements: L=(20±0.5)mm W=(15±0.5)mm L1 = (8 ± 0.5) mm L2 = (3 ± 0.5) mm w1=(0.5±0.1)mm x1 = (1.5 ± 0.2) mm y1=(2±0.2)mm x2=(8±0.5)mm y2=(2±0.2)mm In the formula, L is the length of the slotted patch, W is the width of the slotted patch, L1 is the side length of the square frame, L2 is the length of the two sides of the L-shaped slot, w1 is the width of the L-shaped slot, x1 and y1 are the length and width of the notched corner, and x2 and y2 are the length and width of the boss.
6. The low-cost active RIS enhancement system according to claim 1, characterized in that: A fourth dielectric layer and a third grounding layer are provided between the first grounding layer and the second dielectric layer.
