A composite temperature compensation circuit of a depletion mode self-biased amplifier and a depletion mode self-biased amplifier

Abstract

The application discloses a kind of composite temperature compensation circuit of depletion mode self-bias amplifier and depletion mode self-bias amplifier, the gain fluctuation of depletion mode self-bias amplifier is adaptively temperature compensated by the composite temperature compensation circuit, including temperature-sensitive resistance, voltage dividing resistance, first bias resistance, second bias resistance, enhancement type pHEMT tube core;The source of the enhancement type tube core is grounded, and the grid is respectively connected with temperature-sensitive resistance, voltage dividing resistance one end, temperature-sensitive resistance other end is grounded, and voltage dividing resistance other end is connected with positive electric bias;The drain of the enhancement type tube core is connected with second bias resistance one end, and second bias resistance other end is connected with first bias resistance one end, depletion mode self-bias amplifier, and first bias resistance other end is grounded.The circuit structure of the application is simple, and the area occupied is small, and extra power consumption is small, does not affect amplification circuit impedance matching, is convenient for miniaturization integration, and is applicable to the microwave assembly application scene of self-bias amplifier.

Description

Technical Field

[0001] This invention relates to microwave monolithic integrated circuits, specifically to a composite temperature compensation circuit for a depletion-type self-biased amplifier and the depletion-type self-biased amplifier itself. Background Technology

[0002] With the development of electronic technology, multifunctional integrated electronic systems have gradually become mainstream products in the market. A multifunctional amplitude-phase chip often needs to integrate four or more amplifier stages. Due to the characteristic that the gain of GaAs / GaN HEMT devices decreases with increasing temperature, each amplifier stage will experience a gain variation of approximately ±1dB between -55℃ and 125℃. To ensure the performance and reliability of the chip in complex environments, temperature compensation design is required.

[0003] Common temperature compensation structures include attenuator temperature compensation, diode temperature compensation, and bias network temperature compensation. Attenuators, which incorporate thermistors into the RF link, compensate for gain fluctuations caused by temperature changes by designing different losses at high and low temperatures. However, this introduces additional losses and degrades amplifier performance. Diode temperature compensation introduces diodes and uses a thermistor voltage divider network to adjust the diode bias voltage, thereby controlling the RF signal throughput and achieving temperature compensation. However, this introduces additional losses and power consumption, and occupies a larger size. Traditional bias network temperature compensation structures use thermistor voltage dividers or active device voltage dividers to adaptively control the gate negative voltage of a dual-biased amplifier, achieving temperature compensation by changing the amplifier bias point. This does not introduce additional losses and has the advantage of miniaturization. However, since depletion-mode self-biased amplifier circuits do not have an additional gate negative voltage and rely on the source resistor and capacitor to form a self-biasing network, traditional bias network temperature compensation structures cannot be applied to depletion-mode self-biased amplifier circuit designs.

[0004] Temperature compensation for attenuators introduces additional losses and degrades amplifier performance; temperature compensation for diodes not only introduces additional losses and power consumption, but also results in a larger chip footprint; while temperature compensation for traditional bias networks has no additional losses and can be miniaturized, its application scenarios are limited and it cannot be used in depletion-type self-biased amplifier circuits. Summary of the Invention

[0005] Purpose of the invention: The purpose of this invention is to provide a composite temperature compensation circuit for a depletion-type self-biased amplifier and a depletion-type self-biased amplifier, which can achieve adaptive temperature compensation for the gain of the depletion-type self-biased amplifier, with small footprint and low power consumption.

[0006] Technical Solution: The present invention provides a composite temperature compensation circuit for a depletion-type self-biased amplifier. The composite temperature compensation circuit is used for adaptive temperature compensation of gain fluctuations in the depletion-type self-biased amplifier. The composite temperature compensation circuit includes a thermistor R. ZAL Voltage divider resistor R RM The device consists of a first bias resistor Rs, a second bias resistor R0, and an enhancement-mode pHEMT die M0; the source of the enhancement-mode die M0 is grounded, and its gate is connected to a thermistor R. ZAL Voltage divider resistor R RM One end is connected to the thermistor R. ZAL The other end is grounded, and the voltage divider resistor R RM The other end is connected to a positive bias voltage V. s The drain of the enhanced die M0 is connected to one end of the second bias resistor R0, the other end of the second bias resistor R0 is connected to one end of the first bias resistor Rs and the depletion-type self-biased amplifier, and the other end of the first bias resistor Rs is grounded.

[0007] Furthermore, the temperature-sensitive resistor R ZAL With voltage divider resistor R RM A resistor divider network is formed to provide a temperature-adaptive gate bias voltage for the enhancement-mode pHEMT die M0, thereby compensating for gain fluctuations in the depletion-mode self-biased amplifier caused by temperature changes.

[0008] Furthermore, the temperature-sensitive resistor R ZAL Sheet resistance is positively correlated with temperature; voltage divider resistor R RM The sheet resistance is fixed within the range of -55℃ to 125℃.

[0009] Furthermore, the values ​​of the first bias resistor Rs and the second bias resistor R0 are determined by the static operating point of the amplifier circuit, the size of the enhancement-mode pHEMT die M0, and the temperature-sensitive resistor R. ZAL Resistance value, voltage divider resistor R RM The resistance value is determined by both the quiescent operating point of the amplifier circuit and the required temperature compensation.

[0010] Furthermore, the gate voltage of the enhanced pHEMT die, MO, is positively correlated with temperature.

[0011] Furthermore, the positive bias V s With the power supply V of the depletion-type self-biased amplifier dc Shared.

[0012] Furthermore, the temperature-sensitive resistor R ZAL The voltage divider resistor R is made of boron-implanted silicon nitride material. RM It is made of tantalum nitride metal film material.

[0013] Based on the same inventive concept, the present invention provides a depletion-type self-biased amplifier, which includes the composite temperature compensation circuit of the above-mentioned depletion-type self-biased amplifier.

[0014] Furthermore, the amplifier employs a self-biased common-source amplifier circuit or a self-biased common-source cascode amplifier circuit.

[0015] Furthermore, the other end of the second bias resistor R0 in the composite temperature compensation circuit of the depletion-type self-biased amplifier is connected to the filter capacitor C in the self-biased common-source amplifier circuit. s The filter capacitor C in a one-end or self-biased cascode amplifier circuit s One end is connected to the filter capacitor C in the self-biased common-source amplifier circuit. s The other end is the filter capacitor C in the self-biased cascode amplifier circuit. s The other end is grounded.

[0016] Beneficial effects: Compared with the prior art, the significant technical effects of the present invention are as follows: The present invention adjusts the enhanced pHEMT die M0 and the resistive voltage divider network (composed of the temperature-sensitive resistor R) ZAL With voltage divider resistor R RM (Composition), capable of achieving temperature compensation for depletion-type self-biased amplifiers under arbitrary bias, through the temperature-sensitive resistor R ZAL The resistance changes with temperature, and the gate bias voltage of the depletion-type self-biased amplifier is adaptively adjusted to compensate for gain fluctuations without the need for additional control circuitry. This invention has the advantages of strong versatility and ease of miniaturization and integration. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the temperature-compensated common-source amplifier circuit of the present invention;

[0018] Figure 2 This is a schematic diagram of the temperature-compensated cascode amplifier circuit of the present invention;

[0019] Figure 3 This is a schematic diagram showing the three-temperature gain test results (uncompensated) of the common-source amplifier circuit of the present invention;

[0020] Figure 4 This is a schematic diagram of the three-temperature gain test results of the temperature-compensated common-source amplifier circuit of the present invention;

[0021] Figure 5 This is a schematic diagram showing the three-temperature gain test results (uncompensated) of the common-source cascode amplifier circuit of the present invention;

[0022] Figure 6 This is a schematic diagram showing the three-temperature gain test results of the temperature-compensated cascode amplifier circuit of the present invention. Detailed Implementation

[0023] The technical solution of the present invention will now be described in detail with reference to specific embodiments and accompanying drawings.

[0024] Example 1

[0025] like Figure 1 As shown, this invention discloses a composite temperature compensation circuit for a depletion-type self-biased amplifier. The composite temperature compensation circuit is used for adaptive temperature compensation of gain fluctuations in the depletion-type self-biased amplifier. The composite temperature compensation circuit includes a thermistor R. ZAL Voltage divider resistor R RM The transistor consists of a first bias resistor Rs, a second bias resistor R0, and an enhancement-mode pHEMT die M0. The source of the enhancement-mode die M0 is grounded, and its gate is connected to the thermistor R. ZAL Voltage divider resistor R RM One end is connected to the thermistor R. ZAL The other end is grounded, and the voltage divider resistor R RM The other end is connected to a positive bias voltage V. s The drain of the enhancement-mode die M0 is connected to one end of the second bias resistor R0, and the other end of the second bias resistor R0 is connected to one end of the first bias resistor Rs and the filter capacitor C in the depletion-mode self-biased amplifier. s One end is connected to the first bias resistor Rs and the filter capacitor C. s The other end is grounded.

[0026] Thermostat R ZAL With voltage divider resistor R RM A resistor divider network is formed to provide a temperature-adaptive gate bias voltage for the enhanced pHEMT die M0, thereby compensating for gain fluctuations in the amplifier caused by temperature changes.

[0027] Thermostat R ZA The sheet resistance is positively correlated with the temperature; voltage divider resistor R RM The sheet resistance is fixed within the range of -55℃ to 125℃. The resistance is related to the length and width; the sheet resistance refers to the resistance per square meter.

[0028] Thermostat R ZAL Made from boron-implanted silicon nitride material, it has a positive temperature coefficient characteristic. The resistance at the bottom is 63Ω. The resistance at the bottom is 70Ω. The resistance at the bottom is 89Ω. Voltage divider resistor R RM Made of tantalum nitride metal film material, with a sheet resistance of... The current is fixed at 25Ω within the specified range.

[0029] The values ​​of the first bias resistor Rs and the second bias resistor R0 are determined by the quiescent operating point of the depletion-mode self-biased amplifier, the size of the enhancement-mode pHEMT die M0, and the temperature-sensitive resistor R. ZAL Resistance value, voltage divider resistor R RM The resistance value is determined by both the quiescent operating point of the depletion-mode self-biased amplifier and the required temperature compensation. The filter capacitor C... s The capacitance value is determined by the operating frequency band of the amplifier circuit. The enhancement-mode pHEMT die M0, together with the first bias resistor Rs and the second bias resistor R0, determines the quiescent operating point of the amplifier.

[0030] In the ultra-wideband common-source amplifier circuit example, the enhancement-mode pHEMT die M0 and the amplifier circuit die M1 have the same size, both being 4*60um. The gate voltage of the enhancement-mode pHEMT die M0 is 0.56V, and the gate voltage of the amplifier circuit die M1 is -0.55V. The voltage divider resistor R... RM The resistance is 7400Ω, and the temperature-sensitive resistor R ZAL The resistance is 925Ω, the first bias resistor Rs has a resistance of 52Ω, the second bias resistor R0 has a resistance of 4Ω, and the amplifier circuit adopts a common-source single-stage parallel negative feedback structure, such as... Figure 1 As shown.

[0031] In the example of the ultra-wideband common-source cascode amplifier circuit, the enhancement-mode pHEMT die M0 has the same dimensions as the amplifier circuit dies M1 and M2, all being 4*50um. The gate voltage of the enhancement-mode pHEMT die M0 is 0.58V, and the gate voltage of the amplifier circuit die M1 is -0.5V. The voltage divider resistor R... RM The resistance is 4400Ω, and the temperature-sensitive resistor R ZAL The resistance is 595Ω, the first bias resistor Rs has a resistance of 66Ω, the second bias resistor R0 has a resistance of 5Ω, and the amplifier circuit adopts a common-source, common-gate, parallel negative feedback structure, such as... Figure 2 As shown.

[0032] Under the action of the resistor divider network, the gate bias voltage of the enhancement-mode pHEMT die M0 is positively correlated with temperature. The gate voltage of the amplifier die M1 increases with increasing temperature, moving the operating point away from pinch-off and achieving temperature compensation, with a gain compensation of up to 70%. Preferably, the gate voltage of M1 at room temperature is 0.56V. Specifically: as temperature increases, the channel opening degree of the enhancement-mode pHEMT die M0 increases, the channel resistance r0 decreases, the gate voltage of the amplifier die M1 rises, the operating point moves away from pinch-off, and the gain increases. Conversely, as temperature decreases, the channel opening degree of the enhancement-mode pHEMT die M0 decreases, the channel resistance r0 increases, the gate voltage of the amplifier die M1 decreases, the operating point moves closer to pinch-off, and the gain decreases. The gain change brought about by the above adaptive bias adjustment can compensate for the negative temperature characteristic of the gain of the HEMT device.

[0033] Composite temperature compensation circuit positive bias Vs It can be used with the power supply V of a depletion-type self-biased amplifier. dc It is shared and requires no additional power supply. In this embodiment, the composite temperature compensation circuit is positively biased V. s With 5V DC power supply V dc It can be shared without the need for an additional power supply. The additional power consumption is less than 2mA. Vs can also be shared with other DC power supplies as needed.

[0034] The composite temperature compensation circuit of this invention occupies a small area, does not introduce additional losses, does not affect normal layout and impedance matching, facilitates miniaturization and integration, and is suitable for microwave applications of GaAs and GaN depletion-type HEMT devices.

[0035] This invention combines a thermistor voltage divider network with an active bias network (M0, R0, R). s By combining the positive temperature coefficient of the thermistor with the temperature characteristics of the bias circuit transistor, adaptive temperature compensation for the gain of the depletion-type self-biased amplifier can be achieved.

[0036] The composite temperature compensation circuit proposed in this invention achieves temperature compensation for depletion-type self-biased amplifiers under arbitrary bias by adjusting the enhanced pHEMT die M0 and the thermistor voltage divider network. By adaptively adjusting the amplifier gate bias voltage according to the temperature change of the thermistor value, it compensates for gain fluctuations without occupying additional area, introducing additional losses, or affecting normal layout and impedance matching. It solves to some extent the problem of large performance fluctuations of highly integrated multifunctional chips across the entire temperature range, facilitates miniaturization and integration, and is suitable for microwave component applications of GaAs and GaN depletion-type HEMT devices.

[0037] Example 2

[0038] The present invention provides a depletion-type self-biased amplifier, including the composite temperature compensation circuit of the depletion-type self-biased amplifier described in Embodiment 1.

[0039] like Figure 1 , 2 As shown, the amplifier employs a self-biased common-source amplifier circuit or a self-biased common-source cascode amplifier circuit. This invention provides two specific implementation examples, demonstrating the implementation of a composite temperature compensation circuit in a 2-18GHz ultra-wideband self-biased common-source amplifier circuit and a 2-18GHz ultra-wideband self-biased common-source cascode amplifier circuit, respectively.

[0040] The other end of the second bias resistor R0 in the composite temperature compensation circuit of the depletion-type self-biased amplifier is connected to the filter capacitor C in the self-biased common-source amplifier circuit. s The filter capacitor C in a one-end or self-biased cascode amplifier circuit s One end is connected to the filter capacitor C in the self-biased common-source amplifier circuit.s The other end is the filter capacitor C in the self-biased cascode amplifier circuit. s The other end is grounded.

[0041] like Figure 3 , 4 As shown, in the 2-18GHz common-source amplifier circuit example, the composite temperature compensation circuit of the present invention will... The change in gain at high and low temperatures within the range is from Descending to The feasibility of the scheme was verified, and temperature compensation for the gain of the common-source amplifier circuit was achieved.

[0042] like Figure 5 , 6 As shown, the composite temperature compensation circuit achieved a gain compensation of 70% in the 2-18GHz cascode amplifier circuit example, verifying the feasibility of the scheme and realizing temperature compensation for the gain of the cascode amplifier circuit.

[0043] This invention has been applied in several self-biased common-source amplifier circuits and common-source cascode amplifier circuits. Based on test results, in... Over the entire temperature range, it can reduce high and low temperature variations from ±0.8dB to ±0.3dB. Compared with existing temperature compensation schemes, this is achieved through a thermistor voltage divider network (R0, R...). s Combined with the enhanced pHEMT die M0, it provides adaptive compensation for amplifier gate bias, achieving full-range temperature gain compensation without the need for additional power supply and control circuitry. The compensation effect is significant and does not affect RF transmission performance, making it highly practical and suitable for application in miniaturized high-performance microwave circuits.

Claims

1. A composite temperature compensation circuit for a depletion-type self-biased amplifier, characterized in that: The composite temperature compensation circuit is used to adaptively compensate for gain fluctuations in a depletion-mode self-biased amplifier based on temperature. This composite temperature compensation circuit includes a thermistor R. ZAL Voltage divider resistor R RM First bias resistor Rs, second bias resistor R0, enhanced pHEMT die M0; The source of the enhanced die M0 is grounded, and its gate is connected to the temperature-sensitive resistor R. ZAL Voltage divider resistor R RM One end is connected to the thermistor R. ZAL The other end is grounded, and the voltage divider resistor R RM The other end is connected to a positive bias voltage V. s ; The drain of the enhanced die M0 is connected to one end of the second bias resistor R0, the other end of the second bias resistor R0 is connected to one end of the first bias resistor Rs and the depletion-type self-biased amplifier, and the other end of the first bias resistor Rs is grounded.

2. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The temperature-sensitive resistor R ZAL With voltage divider resistor R RM A resistor divider network is formed to provide a temperature-adaptive gate bias voltage for the enhancement-mode pHEMT die M0, thereby compensating for gain fluctuations in the depletion-mode self-biased amplifier caused by temperature changes.

3. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The temperature-sensitive resistor R ZAL Sheet resistance is positively correlated with temperature; voltage divider resistor R RM Sheet resistance at Fixed within the range.

4. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The values ​​of the first bias resistor Rs and the second bias resistor R0 are determined by the static operating point of the amplifier circuit, the size of the enhancement-mode pHEMT die M0, and the temperature-sensitive resistor R. ZAL Resistance value, voltage divider resistor R RM The resistance value is determined by both the quiescent operating point of the amplifier circuit and the required temperature compensation.

5. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The gate voltage of the enhanced pHEMT die, M0, is positively correlated with temperature.

6. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The positive bias V s With the power supply V of the depletion-type self-biased amplifier dc Shared.

7. The composite temperature compensation circuit for the depletion-type self-biased amplifier according to claim 1, characterized in that: The temperature-sensitive resistor R ZAL The voltage divider resistor R is made of boron-implanted silicon nitride material. RM It is made of tantalum nitride metal film material.

8. A depletion-type self-biased amplifier, characterized in that: The composite temperature compensation circuit includes the depletion-type self-biased amplifier as described in claim 1.

9. The depletion-type self-biased amplifier according to claim 8, characterized in that: The amplifier employs a self-biased common-source amplifier circuit or a self-biased common-source cascode amplifier circuit.

10. The depletion-type self-biased amplifier according to claim 9, characterized in that: The other end of the second bias resistor R0 in the composite temperature compensation circuit of the depletion-mode self-biased amplifier is connected to the filter capacitor C in the self-biased common-source amplifier circuit. s The filter capacitor C in a one-end or self-biased cascode amplifier circuit s One end is connected to the filter capacitor C in the self-biased common-source amplifier circuit. s The other end is the filter capacitor C in the self-biased cascode amplifier circuit. s The other end is grounded.

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