Light emitting device and method for manufacturing light emitting device

Abstract

This invention discloses a light-emitting device and a method for manufacturing the same. The light-emitting device includes a substrate and a first light-emitting unit. The substrate has a pad unit comprising a first pad and a second pad, with a first groove between the first and second pads. The first light-emitting unit includes a first light-emitting chip, with a first electrode of the first light-emitting chip soldered to the first pad and a second electrode of the first light-emitting chip soldered to the second pad. The first light-emitting chip is located above the first groove. The light-emitting device also includes a light-shielding layer disposed on the substrate, covering the side of the first light-emitting unit and filling the first groove. The light-shielding layer of the light-emitting device provided by this invention fills the groove located between the pads on the substrate and below the light-emitting unit, improving the reliability of the device.

Description

Technical Field

[0001] This invention relates to the field of light-emitting device technology, and in particular to a light-emitting device and a method for manufacturing the light-emitting device. Background Technology

[0002] In traditional white light flash lamp devices, a light-shielding colloid is typically sprayed onto the exposed surfaces of the LED chip (excluding the light-emitting surface) to form a light-shielding layer. This effectively prevents light leakage and protects the chip's structure. However, when using flip-chip LEDs, the two electrodes are soldered to two pads on a substrate. Because of the narrow and long grooves between these pads, after the LED is soldered onto the substrate and covers these grooves, the colloid accumulates and partially solidifies as it flows through the grooves to the electrodes. This blockage of the colloid channels, coupled with residual air in the grooves, prevents the colloid from completely filling the gaps, resulting in bubbles and voids that negatively impact device reliability. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art. This invention provides a light-emitting device and a method for manufacturing the light-emitting device. The light-shielding layer of the light-emitting device fills the groove located between the pads on the substrate and under the light-emitting unit, thereby improving the reliability of the device.

[0004] The present invention provides a light-emitting device, the light-emitting device comprising a substrate and a first light-emitting unit, wherein a pad unit is disposed on the substrate, the pad unit comprising a first pad and a second pad, and a first groove exists between the first pad and the second pad; The first light-emitting unit includes a first light-emitting chip, a first electrode of the first light-emitting chip is soldered to the first pad, a second electrode of the first light-emitting chip is soldered to the second pad, and the first light-emitting chip is located above the first groove; The light-emitting device further includes a light-shielding layer disposed on the substrate, the light-shielding layer covering the side of the first light-emitting unit, and the light-shielding layer filling the first groove.

[0005] Furthermore, the first light-emitting unit also includes a light conversion layer, which is disposed on the light-emitting surface of the first light-emitting chip.

[0006] Furthermore, the light-emitting device also includes a second light-emitting unit disposed on the substrate, the second light-emitting unit including a second light-emitting chip.

[0007] Furthermore, the light-shielding layer covers the side of the second light-emitting unit.

[0008] Furthermore, the height of the first light-emitting chip is h1, the height of the second light-emitting chip is h2, and the height of the light conversion layer is h3. The relationship between h1, h2, and h3 is: 0.5h1≤h2≤h1+h3.

[0009] Furthermore, the light-shielding layer includes a spaced light-shielding portion, which is disposed in the gap space between the first light-emitting unit and the second light-emitting unit; The height of the light-blocking portion close to the first light-emitting unit is h4, and the height of the light-blocking portion close to the second light-emitting unit is h5. The relationship between h4 and h5 is: h5≤h4.

[0010] Furthermore, the relationship between h1, h2, h3, h4 and h5 is: h5≤h2, and h1≤h4≤h1+h3.

[0011] Furthermore, the light-emitting device also includes a light-transmitting layer, which is disposed on the light-emitting surface of the first light-emitting unit, and scattering particles are disposed in the light-transmitting layer.

[0012] Furthermore, the horizontal spacing between the first pad and the second pad is d1, and the value range of the spacing d1 is: 0.05mm≤d1≤0.3mm.

[0013] Furthermore, the measured color temperature difference of the light emitted by the light-emitting device is less than 800K.

[0014] Furthermore, the light-shielding layer is white glue or black glue.

[0015] The present invention also provides a method for manufacturing a light-emitting device, the method comprising: A substrate is provided, on which a plurality of pad units are formed, wherein any one of the pad units includes a first pad and a second pad, and a first groove exists between the first pad and the second pad in any one of the pad units; A plurality of first light-emitting chips are provided, and the first light-emitting chips are soldered onto the pad unit, wherein the first electrode of the first light-emitting chip is soldered onto the first pad, and the second electrode of the first light-emitting chip is soldered onto the second pad; A light-shielding colloid is sprayed onto the substrate to form a light-shielding layer; A light-transmitting layer is formed on the light-emitting surface of the first light-emitting chip; The substrate is divided to form independent finished light-emitting devices.

[0016] Furthermore, the step of spraying a light-shielding colloid onto the substrate to form a light-shielding layer includes: Spray a light-shielding colloid along the short side of the first groove; A light-shielding colloid is sprayed along the long side of the first groove.

[0017] This invention provides a light-emitting device and a method for manufacturing the light-emitting device. A segmented light-shielding colloid spraying process is used to prepare a light-shielding layer, first along the short side of the groove and then along the long side. The resulting light-shielding layer completely fills the groove located between the pads on the substrate and under the light-emitting unit, eliminating bubbles and voids generated by conventional spraying processes. It comprehensively encapsulates the light-emitting chip, preventing moisture corrosion, buffering thermal stress, and improving the reliability of the device. The light-shielding layer integrally covers the sides of the light-emitting unit, effectively isolating light crosstalk and leakage. Simultaneously, the high reflectivity of the light-shielding colloid improves light extraction efficiency, ensuring the light-emitting performance of the device. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a cross-sectional view of the light-emitting device structure in Embodiment 1 of the present invention; Figure 2 This is a front view of the light-emitting device structure in Embodiment 1 of the present invention; Figure 3 This is a front view of the substrate structure in Embodiment 1 of the present invention; Figure 4 This is a cross-sectional view of the light-emitting device structure in Embodiment 1 of the present invention from another direction; Figure 5 yes Figure 4 Enlarged view of point a in the middle; Figure 6 This is a flowchart of the fabrication method of the light-emitting device in Embodiment 2 of the present invention; Figure 7 This is a schematic diagram of the substrate structure in Embodiment 2 of the present invention; Figure 8 This is a schematic diagram of the structure of the light-emitting device forming a light-shielding layer by spraying a light-shielding colloid in Embodiment 2 of the present invention. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] In this invention, it should be understood that terms such as “comprising” or “having” are intended to indicate the presence of features, figures, steps, behaviors, components, portions or combinations thereof disclosed in this specification, and are not intended to exclude the possibility that one or more other features, figures, steps, behaviors, components, portions or combinations thereof are present or added.

[0022] It should also be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0023] Example 1 Embodiment 1 of the present invention provides a light-emitting device, the light-emitting device including a substrate and a first light-emitting unit, the substrate being provided with a pad unit, the pad unit including a first pad and a second pad, and a first groove existing between the first pad and the second pad; The first light-emitting unit includes a first light-emitting chip, a first electrode of the first light-emitting chip is soldered to the first pad, a second electrode of the first light-emitting chip is soldered to the second pad, and the first light-emitting chip is located above the first groove; The light-emitting device further includes a light-shielding layer disposed on the substrate, the light-shielding layer covering the side of the first light-emitting unit, and the light-shielding layer filling the first groove.

[0024] Furthermore, such as Figure 1 and Figure 2 As shown, Figure 1 A cross-sectional view of the light-emitting device structure in Embodiment 1 of the present invention is shown. Figure 2 A front view of the light-emitting device structure in Embodiment 1 of the present invention is shown.

[0025] In an optional implementation of this embodiment, the light-emitting device includes a substrate 1 and a first light-emitting unit 2, wherein the first light-emitting unit 2 is disposed on the substrate 1.

[0026] Specifically, the first light-emitting unit 2 is a white light-emitting unit that can emit white light and realize the function of a white light flash lamp.

[0027] Furthermore, such as Figure 3 As shown, Figure 3 A front view of the substrate structure in Embodiment 1 of the present invention is shown.

[0028] In an optional implementation of this embodiment, a pad unit 11 is provided on the substrate 1. The pad unit 11 includes a first pad 12 and a second pad 13, and a first groove 14 exists between the first pad 12 and the second pad 13.

[0029] Specifically, the first pad 12 and the second pad 13 have a certain height and a certain distance between them, so there is a first groove 14 between the first pad 12 and the second pad 13.

[0030] In an optional implementation of this embodiment, the first light-emitting unit 2 includes a first light-emitting chip 21, which is disposed on the substrate 1. The first electrode of the first light-emitting chip 21 is soldered to the first pad 12, and the second electrode of the first light-emitting chip 21 is soldered to the second pad 13. The first light-emitting chip 21 is located above the first groove 14.

[0031] Specifically, the first light-emitting chip 21 is a flip chip, and both electrodes of the first light-emitting chip 21 are directly soldered to the pads on the substrate 1, namely the first pad 12 and the second pad 13 respectively soldered to the substrate 1.

[0032] Furthermore, since the two electrodes of the first light-emitting chip 21 are soldered across two pads, the first light-emitting chip 21 covers the first groove 14.

[0033] In an optional implementation of this embodiment, the light-emitting device further includes a light-shielding layer 3, which is disposed on the substrate 1, covers the side of the first light-emitting unit 2, and fills the first groove 14.

[0034] Specifically, the light-shielding layer 3 is disposed on the substrate 1 and covers the other sides of the first light-emitting chip 21 except for the light-emitting surface. At the same time, the light-shielding layer 3 also extends to fill the first groove 14 located under the bottom of the first light-emitting chip 21 and fills the gap between the first light-emitting chip 21 and the substrate 1.

[0035] Furthermore, the light-shielding layer 3 is made of white glue or black glue.

[0036] Specifically, the white adhesive material used in the light-shielding layer 3 is an adhesive with an organic silicon or epoxy resin system as the base, and the adhesive is doped with high-reflectivity inorganic particles, including one or more of titanium dioxide, silicon dioxide, aluminum oxide, and zinc oxide. The black adhesive material used in the light-shielding layer 3 is also an adhesive with an organic silicone or epoxy resin system as the base. The adhesive is filled with light-absorbing particles, which are one or more of carbon black, titanium black, composite inorganic black pigments, and iron oxide black.

[0037] Furthermore, since there are gaps between the pads in the substrate structure used in the light-emitting device in this embodiment, and there are also tiny gaps between the bottom electrodes of the light-emitting chip and between the solder and the pads of the substrate, when the light-shielding colloid is formed by the traditional spraying process, the light-shielding colloid is difficult to completely penetrate into the gap at the bottom of the light-emitting chip, resulting in a cavity at the bottom of the chip. When the device is subsequently mounted and reflowed, the air in the cavity expands due to heat, affecting the reliability of the device. Therefore, in the structure of the light-emitting device in this embodiment, the light-shielding layer completely extends to fill the gap between the bottom of the first light-emitting chip 21 and the substrate 1, and fills the first groove 14, thereby improving the reliability of the light-emitting device.

[0038] In an optional implementation of this embodiment, the first light-emitting unit 2 further includes a light conversion layer 22, which is disposed on the light-emitting surface of the first light-emitting chip 21; The first light-emitting chip 21 is a blue light-emitting chip.

[0039] Specifically, the light conversion layer 22 is used to convert the blue light emitted by the first light-emitting chip 21 into white light. It is understood that the light conversion layer 22 is not limited to converting blue light into white light. Depending on the actual application requirements, the light conversion layer 22 may also contain other types of phosphors or quantum dot materials to convert the blue light into light of other target wavelengths (e.g., red, green, yellow, etc.). As a preferred embodiment, the light conversion layer 22 converts blue light into white light to meet the usage requirements of general lighting or display backlighting scenarios.

[0040] In an optional implementation of this embodiment, the light-emitting device further includes a second light-emitting unit 4, which is disposed on the substrate 1 and includes a second light-emitting chip 41.

[0041] Specifically, the second light-emitting chip 41 is an infrared light-emitting chip, which emits infrared light. It is understood that the second light-emitting chip 41 is not limited to an infrared light-emitting chip; in other optional implementations, the second light-emitting chip 41 can also be a red light-emitting chip, a green light-emitting chip, or an ultraviolet light-emitting chip, etc., depending on the functional requirements of the device. Preferably, the second light-emitting chip 41 is an infrared light-emitting chip to improve the applicability of the device in fields such as distance sensing, biometric identification, or security monitoring.

[0042] Furthermore, the light-shielding layer 3 covers the side surface of the second light-emitting unit 4.

[0043] Specifically, the light-shielding layer 3 also covers all sides of the second light-emitting chip 41 except for the light-emitting surface, and also fills the gap between the second light-emitting chip 41 and the substrate 1, thereby isolating the infrared light and white light emitted by the first light-emitting unit 2 and the second light-emitting unit 4 respectively, and preventing light leakage.

[0044] Furthermore, the second light-emitting chip 41 is a standard chip, connected to the pads on the substrate 1 by wire bonding. It is understood that the packaging structure of the second light-emitting chip 41 is not limited to a standard chip; in alternative implementations, the second light-emitting chip 41 can also be a flip chip or a vertical chip. Correspondingly, the second light-emitting chip 41 is electrically connected to the pads on the substrate 1 through corresponding conductive connection methods (such as eutectic bonding, conductive adhesive bonding, or wire bonding).

[0045] In one optional implementation of this embodiment, such as Figure 4 and Figure 5 As shown, Figure 4 A cross-sectional view of the light-emitting device structure in Embodiment 1 of the present invention is shown from another direction. Figure 4 The indicated direction and Figure 1 The indicated directions are 90° apart. Figure 5 for Figure 4 Enlarged schematic diagram of point a in the middle.

[0046] Specifically, the height of the first light-emitting chip 21 is h1, the height of the second light-emitting chip 41 is h2, and the height of the light conversion layer 22 is h3. The relationship between h1, h2 and h3 is: 0.5h1≤h2≤h1+h3.

[0047] Specifically, such as Figure 5 As shown, the height relationship between the first light-emitting chip 21, the second light-emitting chip 41, and the light conversion layer 22 is as described above. That is, the height of the second light-emitting chip 41 must be at least greater than or equal to half the height of the first light-emitting chip 21, and the height of the second light-emitting chip 41 must be at least less than or equal to the sum of the heights of the first light-emitting chip 21 and the light conversion layer 22.

[0048] In an optional implementation of this embodiment, the light-shielding layer 3 includes a spaced light-shielding portion 31, which is disposed in the gap space between the first light-emitting unit 2 and the second light-emitting unit 4.

[0049] Specifically, since the light-shielding layer 3 covers the side of the first light-emitting unit 2 and the side of the second light-emitting unit 4, and since there is a certain gap space between the first light-emitting unit 2 and the second light-emitting unit 4, a part of the light-shielding layer 3 is disposed in the gap space between the first light-emitting unit 2 and the second light-emitting unit 4. This part of the light-shielding layer is called the spaced light-shielding part 31.

[0050] It should be noted that, due to capillary action, when the light-shielding colloid is sprayed to form a light-shielding layer, the colloid automatically rises or falls due to its surface tension and adhesion. This is reflected in the gap between the first light-emitting unit 2 and the second light-emitting unit 4, where it climbs towards the sides of the first and second light-emitting units 2 and 4 respectively. Therefore, the top surface of the spacer light-shielding part 31 is not horizontal; from a side view, the top surface of the spacer light-shielding part 31 is arc-shaped. The height of the spacer light-shielding part 31 closest to the first light-emitting unit and its height closest to the second light-emitting unit may differ. Figure 5 As shown.

[0051] Furthermore, the height of the light-blocking part 31 close to the first light-emitting unit 2 is h4, and the height of the light-blocking part 31 close to the second light-emitting unit 5 is h5. The relationship between h4 and h5 is: h5≤h4. The relationship between h1, h2, h3, h4 and h5 is: h5≤h2, and h1≤h4≤h1+h3.

[0052] Specifically, such as Figure 5 As shown, the height of the light-shielding part 31 close to the first light-emitting unit 2 is h4 and the height of the light-shielding part 31 close to the second light-emitting unit 4 is h5. The relationship between the heights of the first light-emitting chip 21, the second light-emitting chip 41 and the light conversion layer 22 is as above. The height of the light-shielding part 31 close to the second light-emitting unit 4 is less than or equal to the height close to the first light-emitting unit 2. The height of the light-blocking portion 31 close to the second light-emitting unit 4 is less than or equal to the height of the second light-emitting chip 41; The height of the light-shielding portion 31 close to the first light-emitting unit 2 is greater than or equal to the height of the first light-emitting chip 21, and less than or equal to the sum of the heights of the first light-emitting chip 21 and the light conversion layer 22.

[0053] It should be noted that the height of the spaced light-shielding part 31 close to the second light-emitting unit 4 is not greater than the height of the second light-emitting chip 41, and the height of the spaced light-shielding part 31 close to the first light-emitting unit 2 is not greater than the sum of the heights of the first light-emitting chip 21 and the light conversion layer 22. This is to ensure that the light-shielding layer 3 does not rise to the light-emitting surface of the first light-emitting unit 2 and the second light-emitting unit 4, thus affecting the light emission of the light-emitting unit. The height of the light-shielding part 31 close to the first light-emitting unit 2 is greater than or equal to the height of the first light-emitting chip 21. This ensures that the side of the first light-emitting chip 21 is not exposed, thus preventing blue light leakage and reducing light spot phenomenon.

[0054] In an optional implementation of this embodiment, the horizontal spacing between the first light-emitting chip 21 and the second light-emitting chip 41 ranges from 200μm to 300μm.

[0055] Specifically, the horizontal spacing between the first light-emitting chip 21 and the second light-emitting chip 41 is limited here. While minimizing the spacing between them to achieve device miniaturization, a distance is set to prevent cross-lighting between them.

[0056] In an optional implementation of this embodiment, the light-emitting device further includes a light-transmitting layer 5, which is disposed on the light-emitting surface of the first light-emitting unit 2, and scattering particles are disposed in the light-transmitting layer 5.

[0057] Specifically, the light-transmitting layer 5 completely covers the light-emitting surface of the first light-emitting unit 2. The light-transmitting layer 5 is doped with scattering particles, which include one or more filler particles such as titanium dioxide particles and silicon dioxide particles. The light-transmitting layer 5 is used to control the light emission angle of the first light-emitting unit 2.

[0058] Furthermore, the light-transmitting layer 5 also completely covers the light-emitting surface of the second light-emitting unit 4.

[0059] In an optional implementation of this embodiment, the horizontal distance between the first pad 12 and the second pad 13 is d1, and the value of the distance d1 is in the range of 0.05mm≤d1≤0.3mm.

[0060] Specifically, the horizontal distance between the first pad 12 and the second pad 13 is the width of the first groove 14.

[0061] In an optional implementation of this embodiment, the first light-emitting unit 2 includes one or more first light-emitting chips 21.

[0062] Furthermore, the second light-emitting unit 4 includes one or more second light-emitting chips 41.

[0063] Specifically, in the light-emitting device provided in this embodiment, each light-emitting unit includes only one light-emitting chip. In actual design, the light-emitting unit may include multiple light-emitting chips. In particular, the first light-emitting unit, which is a white light-emitting unit, may include multiple first light-emitting chips and a light conversion layer corresponding to each first light-emitting chip. When the properties of the light conversion layer are different, the color temperature of the converted white light will be different, realizing dynamic mixing and adjustment of color temperature, meeting the needs of multiple scenarios such as photography fill light and ambient lighting, and greatly improving the environmental adaptability of the light source.

[0064] In an optional implementation of this embodiment, the light conversion layer 22 is prepared based on a spraying process or a film process.

[0065] Specifically, the light conversion layer 22 can be formed by spraying on the light-emitting surface of the first light-emitting chip 21 through a spraying process, or it can be formed by bonding a film to the light-emitting surface of the first light-emitting chip 21.

[0066] In one optional implementation of this embodiment, the measured color temperature difference of the light emitted by the light-emitting device is less than 800K.

[0067] Specifically, as shown in Tables 1 and 2, Table 1 shows the test light emission effect on the long side of the first groove on the light-emitting device, and Table 2 shows the test light emission effect on the short side of the first groove on the light-emitting device.

[0068] Table 1

[0069] Table 2

[0070] Table 1 above shows the measured color temperature difference of the emitted light on the long side of the first groove on the light-emitting device, and Table 2 above shows the measured color temperature difference of the emitted light on the short side of the first groove on the light-emitting device. As can be seen from the tables above, when a light-shielding layer is provided, the measured color temperature difference of the emitted light of the light-emitting device is less than 800K. Only when the color temperature difference is below 800K can the emitted light spot of the light-emitting device be considered uniform.

[0071] In summary, Embodiment 1 of the present invention provides a light-emitting device in which a light-shielding layer covers the side of the light-emitting unit and can completely fill the groove located between the pads on the substrate and under the light-emitting unit, eliminating bubbles and voids generated by conventional spraying processes, fully covering the light-emitting chip, blocking water vapor corrosion, buffering thermal stress, and improving the reliability of the device; the light-shielding layer integrally covers the side of the light-emitting unit, effectively isolating light crosstalk and light leakage, while utilizing the high reflectivity of the light-shielding colloid to improve the light extraction efficiency and ensure the light-emitting performance of the device.

[0072] Example 2 Embodiment 2 of the present invention provides a method for manufacturing a light-emitting device, the method comprising: A substrate is provided, on which a plurality of pad units are formed, wherein any one of the pad units includes a first pad and a second pad, and a first groove exists between the first pad and the second pad in any one of the pad units; A plurality of first light-emitting units are provided, and the first light-emitting units are soldered onto the pad unit, wherein the first electrode of the first light-emitting chip in the first light-emitting unit is soldered onto the first pad, and the second electrode of the first light-emitting chip is soldered onto the second pad; A light-shielding colloid is sprayed onto the substrate to form a light-shielding layer; A light-transmitting layer is formed on the light-emitting surface of the first light-emitting unit; The substrate is divided to form independent finished light-emitting devices.

[0073] In one optional implementation of this embodiment, such as Figure 6 As shown, Figure 6 A flowchart illustrating the fabrication method of the light-emitting device in Embodiment 2 of the present invention is shown, including the following steps: S601. A substrate is provided, and a plurality of pad units are formed on the substrate. Any one of the pad units includes a first pad and a second pad. A first groove exists between the first pad and the second pad in any one of the pad units. In one optional implementation of this embodiment, such as Figure 7 As shown, Figure 7 A schematic diagram of the substrate structure in Embodiment 2 of the present invention is shown. A substrate 1 is provided with a plurality of pad units 11. Each of the pad units 11 includes a first pad and a second pad. A first groove exists between the first pad and the second pad in any of the pad units 11.

[0074] Furthermore, the width of the first groove ranges from 0.05mm to 0.3mm.

[0075] Specifically, the width of the first groove is the horizontal distance between the first pad and the second pad.

[0076] S602. Provide a plurality of first light-emitting chips, and solder the first light-emitting chips onto the pad unit, wherein the first electrode of the first light-emitting chip is soldered onto the first pad, and the second electrode of the first light-emitting chip is soldered onto the second pad; In an optional implementation of this embodiment, a plurality of first light-emitting chips are provided. The first light-emitting chips are flip-chip blue light-emitting chips. Each first light-emitting chip is correspondingly soldered onto a single pad unit. The first electrode of the first light-emitting chip is soldered onto the first pad of the pad unit, and the second electrode of the first light-emitting chip is soldered onto the second pad of the pad unit. Then, the first light-emitting chip is located above the first groove.

[0077] Furthermore, after the first light-emitting chip is soldered onto the substrate, there are gaps between the first light-emitting chip and the substrate, including the height gap between the electrodes of the first light-emitting chip, the gap between the solder on the electrodes and the pads on the substrate, and the first groove on the substrate.

[0078] Furthermore, a light conversion layer is formed on the first light-emitting chip.

[0079] Specifically, before the light-shielding colloid is sprayed to form a light-shielding layer, a light conversion layer is first formed on the light-emitting surface of the first light-emitting chip.

[0080] Furthermore, according to the above process, all the first light-emitting chips are correspondingly soldered onto the pad units on the substrate to form a structure as shown above. Figure 5 The substrate structure shown.

[0081] S603. Spray a light-shielding colloid onto the substrate to form a light-shielding layer; In an optional implementation of this embodiment, a light-shielding colloid is sprayed onto the substrate using a spraying process to form a light-shielding layer covering the side of the first light-emitting unit.

[0082] Specifically, such as Figure 8 As shown, Figure 8 A schematic diagram of the structure of the light-emitting device forming a light-shielding layer by spraying a light-shielding colloid is shown in Embodiment 2 of the present invention.

[0083] Furthermore, a light-shielding colloid is first sprayed along the short side of the first groove 14, i.e. Figure 6 The direction of the solid line arrow in the image.

[0084] Specifically, firstly, a light-shielding colloid is sprayed along the short side of the first groove 14 to pre-wet the sidewall inside the first groove 14. The sprayed colloid will naturally wet and spread inward and downward along the sidewall of the first groove 14, forming a ring of wetted colloid film around the first groove 14 in advance.

[0085] Furthermore, a light-shielding colloid is then sprayed along the long side of the first groove 14, i.e. Figure 8 The direction of the dashed arrow in the image.

[0086] Specifically, a light-shielding colloid is sprayed along the long side of the first groove 14. Since a wetted colloid film layer has been formed around the first groove 14, the colloid can be guided along the side wall to the center of the bottom of the first groove 14. The air in the first groove 14 can be slowly discharged outward as the colloid penetrates. The colloid gradually fills the first groove 14, leaving no air residue.

[0087] It should be noted that the step of spraying light-shielding adhesive on all pad units along the short side of the first groove 14 should be completed first, and then the step of spraying light-shielding adhesive on all pad units along the long side of the first groove 14 should be completed.

[0088] Furthermore, during the spraying of the light-shielding colloid, the substrate is appropriately and continuously heated to maintain a temperature of 50℃-70℃, which can further increase the fluidity of the adhesive, allowing the adhesive to fill the first groove more quickly and improving production efficiency.

[0089] Furthermore, after the spraying process in step S603, the light-shielding colloid completely fills the space in the first groove, leaving no air residue. This prevents the gap air from expanding due to heat during the reflow process, thus improving the reliability of the device.

[0090] S604. A light-transmitting layer is formed on the light-emitting surface of the first light-emitting chip; In an optional implementation of this embodiment, a light-transmitting layer is formed on the light-emitting surface of the first light-emitting chip and on the upper surface of the light-shielding layer.

[0091] Specifically, a light conversion layer is provided on the light-emitting surface of the first light-emitting chip, thus forming a light-transmitting layer on the light conversion layer on the light-emitting surface of the first light-emitting chip.

[0092] S605, divide the substrate to form an independent finished light-emitting device.

[0093] In an optional implementation of this embodiment, after completing steps S601-S604, the substrate is divided into several independent light-emitting device products by taking the pad unit as the unit.

[0094] In summary, Embodiment 2 of the present invention provides a method for fabricating a light-emitting device. A segmented light-shielding colloid spraying process is used to prepare a light-shielding layer, first along the short side of the groove and then along the long side. The resulting light-shielding layer completely fills the groove located between the pads on the substrate and under the light-emitting unit, eliminating bubbles and voids generated by conventional spraying processes. It comprehensively covers the light-emitting chip, preventing moisture corrosion, buffering thermal stress, and improving the reliability of the device. The light-shielding layer integrally covers the sides of the light-emitting unit, effectively isolating light crosstalk and leakage. Simultaneously, the high reflectivity of the light-shielding colloid improves light extraction efficiency, ensuring the light-emitting performance of the device.

[0095] Furthermore, the embodiments of the present invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A light-emitting device, characterized in that, The light-emitting device includes a substrate and a first light-emitting unit. A pad unit is provided on the substrate. The pad unit includes a first pad and a second pad. A first groove exists between the first pad and the second pad. The first light-emitting unit includes a first light-emitting chip, a first electrode of the first light-emitting chip is soldered to the first pad, a second electrode of the first light-emitting chip is soldered to the second pad, and the first light-emitting chip is located above the first groove; The light-emitting device further includes a light-shielding layer disposed on the substrate, the light-shielding layer covering the side of the first light-emitting unit, and the light-shielding layer filling the first groove.

2. The light-emitting device as described in claim 1, characterized in that, The first light-emitting unit further includes a light conversion layer, which is disposed on the light-emitting surface of the first light-emitting chip.

3. The light-emitting device as described in claim 2, characterized in that, The light-emitting device further includes a second light-emitting unit disposed on the substrate, and the second light-emitting unit includes a second light-emitting chip.

4. The light-emitting device as described in claim 3, characterized in that, The light-shielding layer covers the side of the second light-emitting unit.

5. The light-emitting device as described in claim 4, characterized in that, The height of the first light-emitting chip is h1, the height of the second light-emitting chip is h2, and the height of the light conversion layer is h3. The relationship between h1, h2, and h3 is: 0.5h1≤h2≤h1+h3.

6. The light-emitting device as described in claim 5, characterized in that, The light-shielding layer includes a spaced light-shielding portion, which is disposed in the gap space between the first light-emitting unit and the second light-emitting unit; The height of the light-blocking portion close to the first light-emitting unit is h4, and the height of the light-blocking portion close to the second light-emitting unit is h5. The relationship between h4 and h5 is: h5≤h4.

7. The light-emitting device as described in claim 6, characterized in that, The relationship between h1, h2, h3, h4 and h5 is: h5≤h2, and h1≤h4≤h1+h3.

8. The light-emitting device as described in claim 1, characterized in that, The light-emitting device further includes a light-transmitting layer, which is disposed on the light-emitting surface of the first light-emitting unit, and scattering particles are disposed in the light-transmitting layer.

9. The light-emitting device as described in claim 1, characterized in that, The horizontal distance between the first pad and the second pad is d1, and the value of the distance d1 is in the range of 0.05mm≤d1≤0.3mm.

10. The light-emitting device as claimed in claim 1, characterized in that, The measured color temperature difference of the light emitted by the light-emitting device is less than 800K.

11. The light-emitting device as claimed in claim 1, characterized in that, The light-shielding layer is white glue or black glue.

12. A method for manufacturing a light-emitting device, characterized in that, The manufacturing method includes: A substrate is provided, on which a plurality of pad units are formed, wherein any one of the pad units includes a first pad and a second pad, and a first groove exists between the first pad and the second pad in any one of the pad units; A plurality of first light-emitting chips are provided, and the first light-emitting chips are soldered onto the pad unit, wherein the first electrode of the first light-emitting chip is soldered onto the first pad, and the second electrode of the first light-emitting chip is soldered onto the second pad; A light-shielding colloid is sprayed onto the substrate to form a light-shielding layer; A light-transmitting layer is formed on the light-emitting surface of the first light-emitting chip; The substrate is divided to form independent finished light-emitting devices.

13. The method for manufacturing a light-emitting device as described in claim 12, characterized in that, The step of spraying a light-shielding colloid onto the substrate to form a light-shielding layer includes: Spray a light-shielding colloid along the short side of the first groove; A light-shielding colloid is sprayed along the long side of the first groove.

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