An integrated method of thermoelectric arm arrays

Abstract

The application relates to an integrated method of a thermoelectric arm array. The integrated method of the thermoelectric arm array comprises: combining a required complete array by nesting a p-type thermoelectric arm array and an n-type thermoelectric arm array with each other, so that the p-type thermoelectric arm and the n-type thermoelectric arm realize required alternate arrangement in two different directions, i.e. a first direction and a second direction.

Description

Technical Field

[0001] This invention belongs to the field of thermoelectric device technology, and specifically relates to an integration method for a thermoelectric arm array. Background Technology

[0002] Thermoelectric devices enable the direct conversion between thermal energy and electrical energy. Miniature thermoelectric devices have broad application prospects in micro-area refrigeration and precise temperature control. With the miniaturization of thermoelectric devices, the size of thermoelectric arms has decreased from the traditional mm level to below 0.3 mm, the spacing between thermoelectric arms has entered the sub-millimeter scale, and the number of thermoelectric arms contained in a single device will also increase significantly.

[0003] Inside the device, n-type and p-type thermoelectric arms are arranged alternately between the upper and lower substrates to form an array. Traditionally, metallized n-type and p-type thermoelectric material blocks are cut separately to obtain independent thermoelectric arms. Then, the n-type and p-type thermoelectric arms are picked up one by one and transferred to the corresponding positions on the substrate through die bonding. Finally, they are soldered to the upper and lower substrates to obtain a complete thermoelectric device.

[0004] In fact, cutting thermoelectric material blocks can directly yield n-type and p-type thermoelectric arm arrays, but a complete thermoelectric arm array corresponding to a device cannot be obtained through simple nesting of n-type and p-type cut arrays. This is because, on the one hand, in conventional n-type and p-type cut thermoelectric arm arrays, the gap between adjacent n-type thermoelectric arms (≤100μm) is much smaller than the side length of p-type thermoelectric arms (≥200μm), and vice versa, resulting in insufficient nesting space. On the other hand, the n-type and p-type thermoelectric arms in the final array need to be arranged alternately in both the horizontal (row) and vertical (column) directions. However, conventional nesting of n-type and p-type cut arrays as a whole cannot simultaneously achieve the alternating arrangement of n-type and p-type thermoelectric arms in both directions. Therefore, the final complete array can only be obtained by picking up the n-type and p-type thermoelectric arms one by one using a die bonder. However, this method has shortcomings in terms of the arrangement accuracy and integration efficiency of the thermoelectric arm array. As the size of the thermoelectric arms decreases and the number and integration density increase, the above problems will become increasingly serious. Summary of the Invention

[0005] To address the aforementioned problems, this invention provides an integration method for thermoelectric arm arrays: by nesting p-type thermoelectric arm arrays and n-type thermoelectric arm arrays, the p-type thermoelectric arms and n-type thermoelectric arms can be arranged alternately in two different directions, namely the first direction and the second direction, thereby obtaining the desired complete array.

[0006] Preferably, the p-type thermoelectric arm array and n-type thermoelectric arm array are prepared by a cutting method.

[0007] Preferably, the p-type thermoelectric arm array includes: a substrate and p-type thermoelectric arms arranged in an array connected to the substrate; the substrate is composed of at least one of alumina, aluminum nitride, and silicon nitride. Alternatively, the p-type thermoelectric arm array includes: a p-type thermoelectric substrate and p-type thermoelectric arms integratedly connected to the p-type thermoelectric substrate and arranged in an array.

[0008] Preferably, the n-type thermoelectric arm array comprises: a substrate and n-type thermoelectric arms arranged in an array connected to the substrate; the substrate is composed of at least one of alumina, aluminum nitride, and silicon nitride. Alternatively, the n-type thermoelectric arm array includes: an n-type thermoelectric substrate and n-type thermoelectric arms integratedly connected to the n-type thermoelectric substrate and arranged in an array.

[0009] Preferably, the thermoelectric arm materials in the p-type and n-type thermoelectric arm arrays include at least one of Bi2Te3-based materials, Cu2Se-based materials, Ag2S-based materials, Mg-Sb-based materials, and Ag2Se-based materials.

[0010] Preferably, in the p-type thermoelectric arm array, the transverse and longitudinal thermoelectric arms are uniformly arranged along the horizontal x-axis and vertical y-axis, respectively; in the n-type thermoelectric arm array, the transverse and longitudinal thermoelectric arms are uniformly arranged along the horizontal x-axis and vertical y-axis, respectively.

[0011] Preferably, the method of nesting the p-type thermoelectric arm array and the n-type thermoelectric arm array includes the following three methods: (1) Fix the position of the p-type thermoelectric arm array, and by flipping or / and rotating or / and translating the n-type thermoelectric arm array, the p-type thermoelectric arms and n-type thermoelectric arms are arranged alternately as required in both the first and second directions; (2) Fix the position of the n-type thermoelectric arm array, and flip or / and rotate or / and translate the p-type thermoelectric arm array so that the p-type thermoelectric arms and n-type thermoelectric arms are arranged alternately as required in both the first and second directions; (3) By flipping and / or rotating and / or translating the p-type thermoelectric arm array and the n-type thermoelectric arm array, the p-type thermoelectric arms and the n-type thermoelectric arms are arranged in the desired alternating pattern in both the first and second directions.

[0012] Preferably, the first direction and the second direction are perpendicular to each other.

[0013] Preferably, the first direction is a direction with an angle of 45° to the x-axis, and the second direction is a direction with an angle of 135° to the x-axis.

[0014] Preferably, in the complete array: the gap between two adjacent p-type thermoelectric arms in the first direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the n-type thermoelectric arm located between the two p-type thermoelectric arms in that gap direction; the gap between two adjacent n-type thermoelectric arms in the first direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the p-type thermoelectric arm located between the two n-type thermoelectric arms in that gap direction.

[0015] Preferably, in the complete array: the gap between two adjacent p-type thermoelectric arms in the second direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the n-type thermoelectric arm located between the two p-type thermoelectric arms in the gap direction; the gap between two adjacent n-type thermoelectric arms in the second direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the p-type thermoelectric arm located between the two n-type thermoelectric arms in the gap direction.

[0016] Preferably, in the complete array: the gap between two adjacent p-type thermoelectric arms in the first direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single p-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm. Similarly, the gap between two adjacent n-type thermoelectric arms in the first direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single n-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm.

[0017] Preferably, in the complete array: the gap between two adjacent p-type thermoelectric arms in the second direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single p-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm. Similarly, the gap between two adjacent n-type thermoelectric arms in the second direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single n-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm.

[0018] Preferably, the integration method further includes a process of filling the complete array with an insert and then curing and removing the substrate. This allows for further integration into subsequent devices.

[0019] Preferably, after the integration of the thermoelectric arm array is completed, the substrate or p-type thermoelectric substrate in the p-type thermoelectric arm array is removed, and the substrate or n-type thermoelectric substrate in the n-type thermoelectric arm array is removed.

[0020] In the final complete thermoelectric arm array, due to cutting losses and other reasons, the number of p-type thermoelectric arms is less than the number of p-type thermoelectric arms in the initial p-type thermoelectric arm array, and the number of n-type thermoelectric arms is less than the number of n-type thermoelectric arms in the initial n-type thermoelectric arm array.

[0021] Preferably, the insert is ethyl α-cyanoacrylate; the curing temperature is 15–60°C, and the curing time is at least 1 hour.

[0022] On the other hand, the present invention provides a thermoelectric arm array prepared according to the above-described integration method.

[0023] Compared to the traditional method of picking up thermoelectric arms one by one for final array arrangement, the array integration using this invention can achieve the following beneficial effects: (1) Simple operation, low preparation cost and extremely high efficiency: This invention treats n-type and p-type arrays as a whole, and the final array integration can be completed in two simple operations. The preparation speed is independent of the number of thermoelectric arms. The more thermoelectric arms the device contains, the more obvious the advantages of this method. (2) It is beneficial to further improve the arrangement accuracy of thermoelectric arms in the final array: When the final array is integrated by the die bonding process, the actual position of each thermoelectric arm is deviated from the target position due to the positioning accuracy of the die bonding machine transmission mechanism. Moreover, the actual position of the thermoelectric arm is randomly distributed within the deviation range. Therefore, it is very difficult to further improve the arrangement accuracy of the entire array. In this method, the n-type and p-type arrays are nested as a whole. Therefore, the arrangement accuracy of the thermoelectric arms in the final array is only affected by the translation accuracy of the p-type array relative to the n-type array (one variable). It is much easier to further improve the arrangement accuracy. (3) It is beneficial to further reduce the size of thermoelectric arms and improve the array integration density: The die bonding process requires picking up thermoelectric arms one by one. The smaller the size of the thermoelectric arms, the greater the difficulty of picking them up. The higher the integration density of the thermoelectric arms, the higher the requirements for the positioning accuracy and stability of the die bonding machine transmission mechanism. However, this method treats the n-type and p-type arrays as a whole for flipping, translating and nesting. As long as the array size is ensured, reducing the size of the thermoelectric arms does not affect the above operations on the array. As the size of the thermoelectric arms decreases, the spacing between the thermoelectric arms can also be reduced accordingly, thereby further improving the array integration density. Attached Figure Description

[0024] Figure 1This is a schematic diagram of the process for preparing a complete array using the method of the present invention under arbitrary angles between the x and y axes, and between the first direction and the second aspect. (a) shows the n-type and p-type thermoelectric material blocks used to prepare the array. There are no special requirements on the shape and size of the blocks, as long as the required n-type and p-type thermoelectric arm arrays can be prepared based on the blocks. (b) shows the n-type and p-type thermoelectric arm arrays obtained by cutting as needed, wherein the array is integrated with the substrate, with the substrate facing downwards and placed horizontally. The arrangement parameters of the n-type array thermoelectric arms (the center distance between adjacent thermoelectric arms in the horizontal (x-axis) and vertical (y-axis) directions, and the included angle between the horizontal and vertical directions) are the same as the corresponding arrangement parameters of the p-type array thermoelectric arms after rotating 180° along the x-axis. The geometry and dimensions of the n-type and p-type thermoelectric arms can be different, but the height of both n-type and p-type thermoelectric arms is not lower than the required height. Height; (c) Keeping the n-type array stationary, rotate the p-type array thermoelectric arms 180° along the x-axis, and make the horizontal and vertical directions of the corresponding arrays coincide with the horizontal and vertical directions of the n-type array, respectively. Then, move the p-type array above the n-type array. As needed, offset the entire array from the n-type array by the required distance along the first and second directions, respectively, to ensure that the n-type and p-type thermoelectric arms are evenly and alternately arranged in the first and second directions. Reduce the height of the p-type thermoelectric arm array so that the n-type and p-type arrays are nested together, and make the height of the n-type and p-type thermoelectric arm arrays that overlap in the vertical direction not lower than the required height, thus obtaining the required complete thermoelectric arm array (shown in the red box).

[0025] Figure 2This is a schematic diagram of the process for preparing a complete array using the method of the present invention, where the x and y axes, the first direction and the second direction are perpendicular to each other, and the center distance between adjacent thermoelectric arms in both directions is equal. (a) shows the n-type and p-type thermoelectric material blocks used to prepare the array. There are no special requirements on the shape and size of the blocks, as long as the required n-type and p-type thermoelectric arm arrays can be prepared based on the blocks; (b) shows the n-type and p-type thermoelectric arm arrays obtained by cutting as needed, wherein the array is integrated with the substrate, with the substrate facing downwards and placed horizontally. The arrangement parameters of the n-type array thermoelectric arms (the center distance between adjacent transverse (x-axis) and longitudinal (y-axis) thermoelectric arms) are the same as the corresponding arrangement parameters of the p-type array thermoelectric arms, and the height of both n-type and p-type thermoelectric arms is not lower than the required height; (c) with the n-type array stationary, the p-type array thermoelectric arms are flipped along the x-axis or y-axis. 180°, and make the horizontal and vertical directions of the corresponding array coincide with the horizontal and vertical directions of the n-type array, respectively. Then, move the p-type array above the n-type array. As needed, offset the entire array from the n-type array by the required distance along the first direction at a 45° angle to the x-axis and the second direction at a 135° angle to the x-axis, respectively. Ensure that the n-type thermoelectric arms and p-type thermoelectric arms are evenly and alternately arranged in the first and second directions. Reduce the height of the p-type thermoelectric arm array so that the n-type array and p-type array are nested together. Ensure that the height of the n-type and p-type thermoelectric arm arrays that overlap in the vertical direction is not lower than the required height, thus obtaining the required complete thermoelectric arm array (as shown in the red box).

[0026] Figure 3 This is a schematic diagram of the array integration process in Embodiment 1 of the present invention. (a) shows the n-type and p-type thermoelectric material blocks used to prepare the array; (b) shows the n-type and p-type thermoelectric arm arrays obtained by cutting, wherein the array is integrated with the substrate, with the substrate facing downwards; the thermoelectric arms in the n-type and p-type arrays are arranged laterally along the x-axis and longitudinally along the y-axis; the geometric parameters (thermoelectric arm dimensions, spacing) of the same array in the x and y directions are the same, and the geometric parameters of the n-type and p-type arrays are also the same, with the n-type and p-type arrays having completely identical arrangements; (c) keeping the n-type array stationary, rotating the p-type array 90° clockwise around the array center point on a horizontal plane; (d) keeping the n-type array stationary, rotating the p-type array 90° clockwise around the array center point on a horizontal plane. (c) The p-type array shown in the figure is rotated 180° along the x-axis or y-axis and translated above the n-type array. This ensures that the projections of the thermoelectric arms in the p-type and n-type arrays onto the xy-axis plane are evenly and alternately arranged in the first direction with an angle of 45° to the x-axis and the second direction with an angle of 135° to the x-axis. Finally, the height of the p-type array is reduced so that the n-type and p-type arrays are nested together, and the height of the n-type and p-type thermoelectric arm arrays that overlap in the vertical direction is not lower than the required height. The red box shows the complete array of thermoelectric arms to be prepared. In this array, the n-type and p-type thermoelectric arms are evenly and alternately arranged in the first and second directions.

[0027] Figure 4The n-type thermoelectric material block used for cutting the n-type thermoelectric arm array in Example 1.

[0028] Figure 5 The n-type and p-type thermoelectric arm arrays obtained by cutting according to requirements in Example 1 are shown in (a) and (b), which are n-type thermoelectric arm arrays and (c), which are p-type thermoelectric arm arrays. The arrangement of the thermoelectric arms in the array is rotated 90° clockwise around the center point of the array relative to the n-type array on the horizontal plane.

[0029] Figure 6 In Example 1, the n-type array remains stationary. The p-type array is rotated 180° along the x-axis and translated above the n-type array. This ensures that the projections of the thermoelectric arms in the p-type and n-type arrays onto the xy-axis plane are evenly and alternately arranged in a first direction with an angle of 45° to the x-axis and a second direction with an angle of 135° to the x-axis. Finally, the height of the p-type array is reduced so that the p-type and n-type arrays are nested together. To prevent the relative positions of the n-type and p-type thermoelectric arm arrays from shifting during subsequent processing, ethyl α-cyanoacrylate is added between the combined arrays.

[0030] Figure 7 The n-type and p-type thermoelectric arm combination array is obtained after the α-cyanoacrylate has been cured and the n-type and p-type thermoelectric arm array substrates have been removed. The red box contains the required 8 pairs of n-type and p-type thermoelectric arm combination arrays. In the first and second directions, the n-type and p-type thermoelectric arms in the array are uniformly and alternately arranged. Detailed Implementation

[0031] The present invention will be further illustrated by the following embodiments. It should be understood that the following embodiments are for illustrative purposes only and are not intended to limit the present invention.

[0032] The following describes an exemplary method for integrating thermoelectric arm arrays.

[0033] n-type and p-type thermoelectric arm arrays were fabricated using a cutting method. The arrangement parameters of the n-type array thermoelectric arms (the center distance between adjacent thermoelectric arms in the horizontal (x-axis) and vertical (y-axis) directions, and the included angle between the horizontal and vertical directions) are the same as the corresponding arrangement parameters of the p-type array thermoelectric arms after being rotated 180° along the x-axis (the geometry and size of the n-type and p-type thermoelectric arms can be different), as shown in Figure (1b). The height of both the n-type and p-type thermoelectric arms is not lower than the required height.

[0034] The thermoelectric arms in the aforementioned thermoelectric arm array are composed of at least one of the following: Bi2Te3-based material, Cu2Se-based material, Ag2S-based material, Mg-Sb-based material, and Ag2Se-based material. It should be noted that when using the cutting method, the thermoelectric material can be adhered to the substrate surface before cutting; in this case, the thermoelectric material may or may not be cut through. Alternatively, a high-thickness thermoelectric material can be selected directly, eliminating the need for a substrate, and cutting can be performed directly while leaving a portion of the thermoelectric material uncut; in this case, the substrate and the thermoelectric arm can be considered as an integrally connected unit.

[0035] Place the cut n-type and p-type thermoelectric arm arrays horizontally with the base facing down. Keeping the position of the n-type array unchanged, rotate the p-type array thermoelectric arms 180° along the horizontal axis of the array, so that the horizontal and vertical directions of the corresponding arrays coincide with the horizontal and vertical directions of the n-type array, respectively. Then, move the p-type array above the n-type array. As needed, offset the p-type array from the n-type array by the required distance along the first and second directions, respectively, to ensure that the n-type and p-type thermoelectric arms are uniformly alternating in the first and second directions. Lower the height of the p-type thermoelectric arm array so that the n-type and p-type arrays are nested together, and ensure that the height of the overlapping part of the n-type and p-type thermoelectric arm arrays in the vertical direction is not lower than the required height, thus obtaining the required complete thermoelectric arm array, as shown in the red box in Figure (1c).

[0036] An n-type and p-type thermoelectric arm array is prepared by cutting, with the transverse and longitudinal directions perpendicular and the center-to-center distance between adjacent thermoelectric arms equal in both directions. The center-to-center distance between adjacent thermoelectric arms in the n-type array along the transverse and longitudinal directions is equal to that in the p-type array. (The geometry and dimensions of the n-type and p-type thermoelectric arms may be different), as shown in Figure (2b). The height of both the n-type and p-type thermoelectric arms is not less than the required height.

[0037] Place the cut n-type and p-type thermoelectric arm arrays horizontally with the base facing down. Keeping the position of the n-type array unchanged, rotate the p-type array thermoelectric arms 180° along the horizontal or vertical axis of the array, so that the horizontal and vertical directions of the corresponding arrays coincide with the horizontal and vertical directions of the n-type arrays, respectively. Then, move the p-type array above the n-type array. As needed, offset the entire array from the n-type array by the required distance along a first direction at a 45° angle to the x-axis and a second direction at a 135° angle to the x-axis, ensuring that the n-type and p-type thermoelectric arms are evenly alternating in the first and second directions. Lower the height of the p-type thermoelectric arm array so that the n-type and p-type arrays nest together, and ensure that the height of the overlapping n and p-type thermoelectric arm arrays in the vertical direction is not lower than the required height, thus obtaining the required complete thermoelectric arm array, as shown in the red box in Figure (2c).

[0038] An n-type and p-type thermoelectric arm array is prepared by cutting, with the horizontal and vertical directions perpendicular and the center-to-center distance between adjacent thermoelectric arms equal in both directions. The center-to-center distance between adjacent thermoelectric arms in the n-type array along the horizontal and vertical directions is equal to that in the p-type array. The n-type and p-type thermoelectric arms have the same geometry and dimensions, as shown in Figure (3b). The height of both the n-type and p-type thermoelectric arms is not lower than the required height.

[0039] The n-type and p-type thermoelectric arm arrays are kept horizontally along the x-axis and vertically along the y-axis, with both arrays arranged identically and the base facing down. The p-type thermoelectric arm array is then rotated 90° horizontally relative to the n-type array, as shown in Figure (3c). The p-type thermoelectric arm array sample is flipped 180° along the x-axis so that the base faces up. The p-type thermoelectric arm array is then translated onto the n-type thermoelectric arm array, ensuring that the projections of the thermoelectric arms in both arrays onto the xy-axis plane are evenly alternated in a first direction at a 45° angle to the x-axis and a second direction at a 135° angle to the x-axis. Finally, the height of the p-type array is reduced so that the p-type and n-type arrays are nested within each other, ensuring that the height of the overlapping n-type and p-type thermoelectric arm arrays in the vertical direction is not lower than the required height, resulting in a combined array. In this combined array, the n-type and p-type thermoelectric arms are evenly alternated in both the first and second directions, as shown in Figure (3c). By simply cutting and trimming, the complete thermoelectric arm array required for integrating thermoelectric devices can be obtained from this combined array, as shown in the red box in Figure (3d).

[0040] The complete thermoelectric arm array obtained by this method is composed of nested n-type and p-type cut arrays. Therefore, when designing the final array geometry, it should be ensured that the gap between adjacent thermoelectric arms in the n-type cut array is larger than the projected size of the p-type thermoelectric arm located between them in the gap direction, so as to accommodate the corresponding p-type thermoelectric arm, and vice versa. As an example, in the n-type thermoelectric arm array, the margin of the gap between two adjacent n-type thermoelectric arms in the first direction relative to the projected size of the p-type thermoelectric arm located between the two n-type thermoelectric arms in the gap direction is ≥1μm, preferably ≥50μm; the margin of the gap between two adjacent p-type thermoelectric arms relative to the projected size of the n-type thermoelectric arm located between the two p-type thermoelectric arms in the gap direction is ≥1μm, preferably ≥50μm.

[0041] An insert is filled into the composite array and cured. The insert is composed of ethyl α-cyanoacrylate; the curing temperature is 15–60°C; and the curing time is at least 1 hour.

[0042] After the inlay material has cured, the substrate or p-type thermoelectric substrate in the p-type thermoelectric arm array is removed by grinding or cutting, and the substrate or n-type thermoelectric substrate in the n-type thermoelectric arm array is removed.

[0043] The following examples further illustrate the present invention in detail. It should also be understood that the following examples are only for further explanation of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above description of the present invention are within the scope of protection of the present invention. The specific process parameters, etc., in the following examples are merely examples within a suitable range; that is, those skilled in the art can make appropriate selections within the appropriate range based on the description herein, and are not intended to be limited to the specific values ​​in the examples below.

[0044] Example 1

[0045] An array of eight complete bismuth telluride-based thermoelectric arms was fabricated, with side lengths of 200 μm, heights of 400 μm, and a center-to-center distance of 500 μm between the nearest neighbor n and p thermoelectric arms. The n-type thermoelectric arm composition was Bi₂Te. 2.7 Se 0.3 The p-type component is Bi. 0.4 Sb 1.6 Te3: (1) As shown in Figure (4), a square n-type material block with a thickness of 2 mm and a side length of 4.3 mm is selected; an n-type thermoelectric arm array is obtained by dicing process, as shown in Figure (4). Figure 5 (a) Figure 5 As shown in (b). The thermoelectric arm has a side length of 0.2 mm, a slit width of 0.507 mm, and a height of 0.45 mm. A p-type thermoelectric arm array was prepared using the same method, as shown... Figure 5 As shown in (c); (2) Fix the n-type and p-type thermoelectric arm arrays on the sample stage of the die bonder, keeping the arrays horizontally along the x-axis and vertically along the y-axis, with the base facing down, and ensuring that the p-type and n-type thermoelectric arm arrays have the same arrangement in the x and y directions. Pick up the p-type thermoelectric arm array with the nozzle, rotate it 90° in the xy plane, and flip it 180° along the x-axis. Then, translate the p-type thermoelectric arm array above the n-type thermoelectric arm array, and further fine-tune the position of the p-type thermoelectric arm array to ensure that the projections of the thermoelectric arms in the p-type and n-type arrays on the xy-axis plane are evenly and alternately arranged in the first direction with an angle of 45° to the x-axis and the second direction with an angle of 135° to the x-axis. Finally, reduce the height of the p-type thermoelectric arm array so that it is nested with the n-type array to obtain a new combined array. The height of the overlapping part of the n and p thermoelectric arms in the vertical direction in this array is about 0.45 mm. (3) Fill the gaps in the new combined array with ethyl α-cyanoacrylate, as shown in Figure (6). Let the embedded sample stand at 30°C for 12 hours to complete the curing. Then grind to remove the n-type and p-type material substrates, and ensure that the height of the thermoelectric arm is 0.4 mm, so as to obtain the combined array of thermoelectric arms fixed by the embedded material, as shown in Figure (7). By simple cutting, the required complete array of 8 pairs of thermoelectric arms can be obtained from the combined array (as shown in the red box in Figure (7)).

Claims

1. A method for integrating a thermoelectric arm array, characterized in that, The integration method includes: nesting p-type thermoelectric arm arrays and n-type thermoelectric arm arrays to achieve the required alternating arrangement of p-type thermoelectric arms and n-type thermoelectric arms in two different directions, namely the first direction and the second direction, so as to obtain the required complete array.

2. The integration method according to claim 1, characterized in that, The p-type thermoelectric arm array includes: a substrate and p-type thermoelectric arms arranged in an array connected to the substrate; the substrate is composed of at least one of alumina, aluminum nitride, and silicon nitride; or, the p-type thermoelectric arm array includes: a p-type thermoelectric substrate and p-type thermoelectric arms arranged in an array integrally connected to the p-type thermoelectric substrate. The n-type thermoelectric arm array includes: a substrate and n-type thermoelectric arms arranged in an array connected to the substrate; the substrate is composed of at least one of alumina, aluminum nitride, and silicon nitride; or, the n-type thermoelectric arm array includes: an n-type thermoelectric substrate and n-type thermoelectric arms arranged in an array integrally connected to the n-type thermoelectric substrate.

3. The integration method according to claim 1 or 2, characterized in that, The thermoelectric arm materials in the p-type and n-type thermoelectric arm arrays include at least one of the following: Bi2Te3-based materials, Cu2Se-based materials, Ag2S-based materials, Mg-Sb-based materials, and Ag2Se-based materials.

4. The integration method according to any one of claims 1-3, characterized in that, In the p-type thermoelectric arm array, the transverse and longitudinal thermoelectric arms are uniformly arranged along the horizontal x-axis and the vertical y-axis, respectively; in the n-type thermoelectric arm array, the transverse and longitudinal thermoelectric arms are uniformly arranged along the horizontal x-axis and the vertical y-axis, respectively.

5. The integration method according to any one of claims 1-4, characterized in that, The methods for nesting the p-type thermoelectric arm array and the n-type thermoelectric arm array include the following three: (1) Fix the position of the p-type thermoelectric arm array, and by flipping or / and rotating or / and translating the n-type thermoelectric arm array, the p-type thermoelectric arms and n-type thermoelectric arms are arranged alternately as required in both the first and second directions; (2) Fix the position of the n-type thermoelectric arm array, and flip or / and rotate or / and translate the p-type thermoelectric arm array so that the p-type thermoelectric arms and n-type thermoelectric arms are arranged alternately as required in both the first and second directions; (3) By flipping and / or rotating and / or translating the p-type thermoelectric arm array and the n-type thermoelectric arm array, the p-type thermoelectric arms and the n-type thermoelectric arms are arranged in the desired alternating pattern in both the first and second directions.

6. The integration method according to any one of claims 1-5, characterized in that, The first direction and the second direction are perpendicular to each other; Preferably, the first direction is a direction with an angle of 45° to the x-axis, and the second direction is a direction with an angle of 135° to the x-axis.

7. The integration method according to any one of claims 1-6, characterized in that, In the complete array: the gap between two adjacent p-type thermoelectric arms in the first direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the n-type thermoelectric arm located between the two p-type thermoelectric arms in that gap direction; the gap between two adjacent n-type thermoelectric arms in the first direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the p-type thermoelectric arm located between the two n-type thermoelectric arms in that gap direction; In the complete array: the gap between two adjacent p-type thermoelectric arms in the second direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the n-type thermoelectric arm located between the two p-type thermoelectric arms in the gap direction; the gap between two adjacent n-type thermoelectric arms in the second direction has a margin of ≥1μm, preferably ≥50μm, relative to the projected size of the p-type thermoelectric arm located between the two n-type thermoelectric arms in the gap direction.

8. The integration method according to any one of claims 1-7, characterized in that, In the complete array: the gap between two adjacent p-type thermoelectric arms in the first direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single p-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm. Similarly, the gap between two adjacent n-type thermoelectric arms in the first direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single n-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm. In the complete array: the gap between two adjacent p-type thermoelectric arms in the second direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single p-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm. Similarly, the gap between two adjacent n-type thermoelectric arms in the second direction is ≥30μm, preferably 100μm to 0.5mm; the side length or diameter of a single n-type thermoelectric arm is ≥10μm, preferably 100μm to 0.5mm; and the height is ≥10μm, preferably 100μm to 0.5mm.

9. The integration method according to any one of claims 1-8, characterized in that, The integration method also includes processes of filling the complete array with an insert and then curing and removing the substrate; Preferably, the insert is ethyl α-cyanoacrylate; the curing temperature is 15–60°C, and the curing time is at least 1 hour.

10. A thermoelectric arm array prepared by the integration method according to any one of claims 1-9.

Images