A wafer bevel corner surface distribution measurement method, measurement device and detection system

Abstract

This invention discloses a method, measuring device, and detection system for measuring the distribution of bevel angles on a wafer. The wafer surface under test has multiple detection points. The method includes: acquiring a first rocking curve spectrum and a second rocking curve spectrum corresponding to each detection point; the first and second rocking curve spectra are respectively the rocking curve spectra corresponding to the first and second crystal orientations of the wafer, with the first and second crystal orientations being perpendicular to each other; determining the first and second diffraction peak positions corresponding to each detection point based on the first and second rocking curve spectra, respectively; determining the bevel angle of each detection point based on the first and second diffraction peak positions; and generating a bevel angle characterization result of the surface under test based on the bevel angle and corresponding coordinates of each detection point. This invention can accurately and comprehensively detect the distribution data of the bevel angles on a wafer, truly reflecting the overall crystal orientation deviation of the wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a method, measuring device and detection system for measuring the distribution of beveled facets on a wafer. Background Technology

[0002] The off-cut angle of a semiconductor single-crystal wafer refers to the angular deviation between the normal direction of the wafer surface and the normal direction of the crystal plane. This parameter is crucial to the subsequent epitaxial quality and device performance. A precise off-cut angle can induce atomic step flow growth, suppress defects such as antiphase domains, and effectively control the polarization effect and carrier mobility at the heterojunction interface.

[0003] However, current conventional testing methods mostly employ single-point X-ray diffraction, which can only obtain the surface-to-crystal angle at a local point (usually the center point) of the sample through rocking curves. This method cannot reflect the complex surface distribution such as saddle-shaped or pot-shaped features formed by processing stress or original substrate warping, leading to a serious underestimation of the overall crystal orientation deviation of the wafer. Especially for large-size wafers, the accumulation of processing stress and warping deformation intensifies significantly with increasing diameter. The test results at the center point may differ from the actual bevel angle of the edge region by several times or even orders of magnitude, making the representativeness of single-point testing severely inadequate. Summary of the Invention

[0004] This invention provides a method, equipment, and detection system for measuring the distribution of wafer bevel angles, so as to accurately and comprehensively detect the distribution data of wafer bevel angles and truly reflect the overall crystal orientation deviation of the wafer.

[0005] According to one aspect of the present invention, a method for measuring the distribution of beveled facets on a wafer is provided, characterized in that the surface to be measured on the wafer has multiple detection points, and the method includes: Obtain a first rocking curve spectrum and a second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, wherein the first crystal orientation and the second crystal orientation are perpendicular to each other. Based on the first rocking curve spectrum and the second rocking curve spectrum of each detection point, the first diffraction peak position and the second diffraction peak position corresponding to each detection point are determined respectively. Based on the first diffraction peak position and the second diffraction peak position of each detection point, the oblique cutting angle of each detection point is determined; Based on the chamfer angle and corresponding coordinates of each detection point, the chamfer angle characterization result of the surface to be tested is generated.

[0006] Optionally, determining the oblique angle of each detection point based on the first diffraction peak position and the second diffraction peak position of each detection point includes: Obtain the theoretical Bragg angle of the wafer; Based on the theoretical Bragg angle and the first diffraction peak position of each detection point, the first oblique angle component of each detection point is obtained; Based on the theoretical Bragg angle and the second diffraction peak position of each detection point, the second oblique angle component of each detection point is obtained; The chamfer angle of each detection point is calculated based on the first chamfer angle component and the second chamfer angle component of each detection point.

[0007] Optionally, calculating the chamfer angle of each detection point based on the first chamfer angle component and the second chamfer angle component of each detection point includes: Calculate the product of the cosine of the first chamfer component and the cosine of the second chamfer component for each detection point to obtain the corresponding intermediate value; Calculate the arccosine value of each of the intermediate values ​​to obtain the oblique angle of each of the detection points; And / or, obtaining the first swing curve spectrum and the second swing curve spectrum corresponding to each of the detection points includes: Transform the coordinates of each detection point when acquiring the second rocking curve spectrum and the coordinates when acquiring the first rocking curve spectrum to the same coordinate system; By associating each coordinate, the corresponding first oscillation curve spectrum, and the corresponding second oscillation curve spectrum, a first oscillation curve spectrum and a second oscillation curve spectrum corresponding to each detection point are obtained.

[0008] Optionally, the chamfer angle characterization result includes a distribution map of the combined chamfer angle size and a distribution map of the chamfer angle azimuth, the coordinates include an abscissa and a ordinate, and the generation of the chamfer angle characterization result of the surface to be tested based on the chamfer angle of each detection point and the corresponding coordinates includes: Based on the x-coordinate, y-coordinate, and oblique angle of each detection point, a distribution map of the size of the combined oblique angle is generated; The bias angle of each detection point is determined based on the first and second oblique angle components of each detection point. Based on the x-coordinate, y-coordinate, and yaw angle of each detection point, the oblique angle azimuth distribution map is generated.

[0009] Optionally, determining the bias angle of each detection point based on the first and second oblique angle components of each detection point includes: The reference angle is determined based on the sign of the second oblique angle component; Calculate the ratio of the tangent of the first shear angle component to the tangent of the second shear angle component to obtain the tangent ratio. Calculate the deflection mid-angle based on the tangent ratio, the first shear angle component, and the second shear angle component; The deflection angle is obtained by summing the reference angle and the deflection correction angle.

[0010] Optionally, calculating the deflection mid-angle based on the tangent ratio, the first shear angle component, and the second shear angle component includes: When the first chamfer angle component is equal to 0° and the second chamfer angle component is greater than 0°, the deflection mid-angle is determined to be equal to 90°. When the first chamfer angle component is equal to 0° and the second chamfer angle component is less than 0°, the deflection mid-angle is determined to be equal to -90°. When the first chamfer angle component is equal to 0° and the second chamfer angle component is equal to 0°, it is determined that the detection point has no chamfer angle. When the first chamfer angle component is not equal to 0° and the second chamfer angle component is not equal to 0°, the deflection intermediate angle is determined based on the tangent ratio value; And / or, if the second chamfer component is greater than 0°, the reference angle is 90°; if the second chamfer component is less than 0°, the reference angle is 270°.

[0011] Optionally, the method for measuring the wafer bevel facet distribution further includes at least one of the following steps: Based on the first and second bevel angle components of each detection point, the height gradient of each detection point is determined; based on the height gradient of each detection point, the relative height of the crystal plane of each detection point relative to the reference plane is calculated; based on the coordinates of each detection point and its corresponding relative height, a relative height distribution map is generated. A three-dimensional crystal plane bending diagram is generated based on the coordinates of each detection point and its corresponding relative height. Based on the first chamfer angle component and the second chamfer angle component of each detection point, calculate the unit normal vector of each detection point on the wafer surface; based on the coordinates of each detection point and its corresponding unit normal vector, generate a surface normal vector map.

[0012] Optionally, before obtaining the first and second swing curve spectra corresponding to each detection point, the method further includes: The dot spacing is determined based on the diameter of the wafer; The test surface of the wafer is divided into multiple detection areas in a grid pattern by the point spacing; wherein the distance from the detection area located in the edge region of the wafer to the edge of the wafer is greater than or equal to 2 mm, and the detection area corresponds one-to-one with the detection point.

[0013] According to another aspect of the present invention, a measuring device is provided, comprising a memory and a processor interconnected thereto, the memory being used to store a computer program, which, when executed by the processor, is used to implement the method as described in any embodiment of the present invention.

[0014] According to another aspect of the present invention, a detection system is provided, comprising a measuring device and an X-ray diffractometer interconnected, wherein the measuring device is the measuring device described in any embodiment of the present invention, and the X-ray diffractometer comprises: The sample stage is used to hold the wafers. An X-ray source used to generate X-rays; A pointed slit is disposed between the X-ray source and the sample stage to confine the X-ray spot within the detection area of ​​the wafer.

[0015] The technical solution provided by this invention divides the surface of a wafer under test into multiple detection points and obtains two rocking curve spectra corresponding to the first and second crystal directions for each detection point. This allows for the determination of the diffraction peak positions of each detection point in the first and second crystal directions, and the calculation of the bevel angle for each detection point. Finally, the coordinates of each detection point are combined to generate a bevel angle characterization result for the entire surface under test. This accurately reflects the overall crystal orientation deviation of the wafer caused by processing stress and original warpage, effectively avoiding the underestimation of the overall crystal orientation deviation by single-point testing. Furthermore, since the diffraction peak positions of each detection point are obtained based on rocking curve spectra of two mutually perpendicular crystal directions, the determined bevel angle includes the angular deviation component in the two-dimensional direction, thereby improving the accuracy of the bevel angle measurement for each detection point. In addition, the generated bevel angle characterization result can intuitively present the distribution trend of the bevel angle across the entire surface, providing a reliable basis for the differentiated control of subsequent epitaxial process parameters and improving the process adaptability and product yield of large-size semiconductor wafers in epitaxial processes.

[0016] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a flowchart of a method for measuring the distribution of beveled facets on a wafer, provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of a partial structure of a detection system provided in an embodiment of the present invention; Figure 3 This is a flowchart of another method for measuring the distribution of wafer beveled facets provided in an embodiment of the present invention; Figure 4 This is a flowchart of another method for measuring the distribution of wafer beveled facets provided in an embodiment of the present invention; Figure 5 This is a schematic diagram of the first azimuth angle provided in an embodiment of the present invention; Figure 6 This is a schematic diagram of the second azimuth angle provided in an embodiment of the present invention; Figure 7 This is a flowchart of another method for measuring the distribution of wafer beveled facets provided in an embodiment of the present invention; Figure 8 This is a distribution diagram of the size of the bevel angle of a wafer surface to be tested, provided by an embodiment of the present invention; Figure 9 This is an azimuth distribution diagram of the oblique cutting angle of the wafer surface to be tested provided in an embodiment of the present invention; Figure 10 This is a relative height distribution diagram of a wafer surface to be tested provided in an embodiment of the present invention; Figure 11 This is a three-dimensional crystal plane bending diagram of a wafer surface to be tested, provided in an embodiment of the present invention; Figure 12 This is a surface normal vector diagram of a wafer surface to be tested provided in an embodiment of the present invention; Figure 13 This is a schematic diagram of the structure of a measuring device provided in an embodiment of the present invention; Figure 14 This is a schematic diagram of the structure of a detection system provided in an embodiment of the present invention. Detailed Implementation

[0019] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0020] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0021] This invention provides a method for measuring the distribution of beveled facets on a wafer. The surface of the wafer to be measured has multiple detection points, as referenced... Figure 1 , Figure 1 This is a flowchart of a method for measuring the bevel facet distribution of a wafer according to an embodiment of the present invention. The method includes: S110. Obtain the first rocking curve spectrum and the second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, and the first crystal orientation and the second crystal orientation are perpendicular to each other.

[0022] The wafer diameter can range from 1 inch to 12 inches, such as 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 7 inches, 8 inches, 9 inches, 10 inches, 11 inches, or 12 inches. Multiple test points are pre-marked on the surface of the wafer to be tested. The number and density of these test points can be set according to the wafer size, warpage, and the accuracy requirements of the bevel angle in subsequent epitaxial processes. Both the first and second rocking curve spectra are obtained through rocking curve testing.

[0023] Furthermore, it can be achieved through methods such as Figure 2The detection system shown performs a rocking curve test at each detection point. The X-ray diffractometer may include a sample stage 50, an X-ray source 10, and a pointed slit 30. The sample stage 50 is used to hold the wafer; the X-ray source 10 is used to generate X-rays; the pointed slit 30 is positioned between the X-ray source 10 and the sample stage 50, and its width can be 1 mm. This slit reduces the horizontal and vertical divergence of the incident X-rays, limiting the beam spot size irradiating the surface of the wafer 100 under test, thereby confining the incident X-ray beam spot within the test area of ​​the wafer 100 surface, avoiding signal aliasing in the test area, reducing beam divergence, and improving spatial resolution. The test area corresponds one-to-one with the detection point.

[0024] Before measurement, wafer 100 is placed on the sample stage 50 of a high-precision X-ray diffractometer. Optical alignment or mechanical centering can be used to align the geometric center of the wafer with the rotation center of the sample stage to ensure the coordinate positioning accuracy of each detection point. For each detection point, a rocking curve test is performed sequentially along the first and second crystal directions to obtain the first and second rocking curve spectra corresponding to each detection point. The rocking curve test, also known as ω-scan, is performed by fixing the X-ray detector 20 to the diffraction angle (2θ) of the wafer surface to be measured. B Position, such that the incident X-ray beam is positioned relative to the surface to be measured on wafer 100 at the Bragg angle (θ). B A reciprocating angle scan was performed near the incident surface, and the diffraction intensity at different incident angles was recorded to obtain a rocking curve spectrum with diffraction intensity as the ordinate and incident angle as the abscissa. The incident X-ray beam relative to the wafer surface under test was at the Bragg angle (θ). B During the reciprocating angle scanning process near the Bragg angle, the wafer 100 can be kept stationary while the X-ray source 10 is controlled to perform angle scanning near the Bragg angle; alternatively, to keep the X-ray source 10 stationary, the wafer 100 can be controlled to swing near the Bragg angle via the sample stage 50 to achieve X-ray angle scanning.

[0025] In this embodiment, for two swing curve scans at the same detection point, the sample stage 50 can be rotated to rotate the wafer 100 90° around the normal of its surface to be tested, thereby switching between the first and second crystal orientations. The material of the wafer 100 includes, but is not limited to, semiconductor single-crystal wafers such as silicon carbide (SiC), gallium nitride (GaN), sapphire (Al2O3), or single-crystal silicon (Si).

[0026] S120. Based on the first and second rocking curve spectra of each detection point, determine the first and second diffraction peak positions corresponding to each detection point.

[0027] The first and second rocking curve spectra at each detection point were processed to extract the diffraction peak positions. Each rocking curve spectrum was plotted with the incident angle on the x-axis and diffraction intensity on the y-axis, showing a peak with a maximum diffraction intensity at the location satisfying the Bragg condition. Data processing included: first, preprocessing the original spectra with background subtraction and smoothing filtering to eliminate interference from X-ray statistical fluctuations and environmental noise; then, using a peak-finding algorithm to determine the diffraction peak positions. The peak-finding algorithm could be one of the following: directly taking the angle corresponding to the maximum diffraction intensity as the peak position; performing Gaussian or Lorentz fitting on the data points in the peak region, using the fitted peak center as the peak position; or using the centroid method to perform a weighted average of the intensity-angle data within the effective range of the peak, using the weighted center as the peak position. After the above processing, the first diffraction peak position under the first crystal direction and the second diffraction peak position under the second crystal direction were obtained for each detection point.

[0028] S130. Based on the first and second diffraction peak positions of each detection point, determine the oblique cutting angle of each detection point.

[0029] For each detection point, based on the first and second diffraction peak positions obtained in step S120, the angular components of the oblique angle in the two orthogonal directions of the first and second crystal directions are calculated respectively. The oblique angle of the detection point is then obtained by combining the two angular components. The angular component in the first crystal direction is the first oblique angle component, and the angular component in the second crystal direction is the second oblique angle component. Using the first and second oblique angle components of each detection point as two orthogonal components, the vector composition rule is applied to calculate the oblique angle of each detection point. The vector composition rule satisfies that the product of the cosine value of the first oblique angle component and the cosine value of the second oblique angle component equals the cosine value of the oblique angle.

[0030] S140. Based on the chamfer angle and corresponding coordinates of each detection point, generate the chamfer angle characterization result of the surface to be tested.

[0031] After obtaining the in-plane coordinates of the chamfer angles of all detection points, the chamfer angle characterization result of the surface to be tested is generated based on the chamfer angle of each detection point and its corresponding coordinates.

[0032] The technical solution provided by this invention divides the surface of a wafer to be tested into multiple detection points and obtains two rocking curve spectra corresponding to the first and second crystal directions for each detection point. This allows for the determination of the diffraction peak positions of each detection point in the first and second crystal directions, and the calculation of the bevel angle for each detection point. Finally, the coordinates of each detection point are combined to generate a bevel angle characterization result for the entire surface under test. This accurately reflects the overall crystal orientation deviation of the wafer caused by processing stress and original warpage, effectively avoiding the underestimation of the overall crystal orientation deviation of the wafer by single-point testing. Furthermore, since the diffraction peak positions of each detection point are obtained based on rocking curve spectra of two mutually perpendicular crystal directions, the determined bevel angle includes the angular deviation component in the two-dimensional direction, thereby improving the accuracy of the bevel angle measurement for each detection point. In addition, the generated bevel angle characterization result can intuitively present the distribution trend of the bevel angle across the entire surface, providing a reliable basis for the differentiated control of subsequent epitaxial process parameters and improving the process adaptability and product yield of large-size semiconductor wafers in epitaxial processes.

[0033] refer to Figure 3 , Figure 3 This is a flowchart of another method for measuring the distribution of beveled edges on a wafer, provided in an embodiment of the present invention. The method for measuring the distribution of beveled edges on a wafer includes: S210. Obtain the first rocking curve spectrum and the second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, and the first crystal orientation and the second crystal orientation are perpendicular to each other.

[0034] S220. Based on the first and second rocking curve spectra of each detection point, determine the first and second diffraction peak positions corresponding to each detection point.

[0035] S210-S220 are the same as S110-S120 mentioned above, and will not be described again here.

[0036] S230, Obtain the theoretical Bragg angle of the wafer.

[0037] refer to Figure 2 Theoretical Bragg angle θ B The acquisition method may include: placing the wafer to be tested on the sample stage 50 of a high-resolution X-ray diffractometer, using symmetrical diffraction geometry, that is, selecting the (00) of wafer 100. l The crystal plane is used as the diffraction plane. The theoretical Bragg angle θ of the selected diffraction plane is calculated according to Bragg's law. B : 2d·sinθ B =nλ; Where d is the interplanar spacing of the diffraction crystal plane, which is determined by the crystal structure of the wafer material; λ is the characteristic radiation wavelength of the X-ray source 10; and n is the diffraction order, which is taken as n=1 in this embodiment.

[0038] Using symmetrical diffraction geometry allows the diffraction peaks to directly correspond to the normal direction of the wafer surface, thus simplifying the calculation of the oblique angle component.

[0039] S240. Based on the theoretical Bragg angle and the first diffraction peak position of each detection point, the first oblique angle component of each detection point is obtained.

[0040] The first oblique angle component for each detection point is obtained by comparing the theoretical Bragg angle with the first diffraction peak position corresponding to each detection point. The first oblique angle component is a signed angle value. When the first oblique angle component is greater than 0, it indicates that the crystal plane normal at that detection point is deflected in the positive direction relative to the normal of the surface under test in the first crystal orientation plane; when the first oblique angle component is less than 0, it indicates that it is deflected in the negative direction; the absolute value of the first oblique angle component reflects the degree of deflection.

[0041] S250. Based on the theoretical Bragg angle and the second diffraction peak position of each detection point, the second oblique angle component of each detection point is obtained.

[0042] The second oblique angle component for each detection point is obtained based on the difference between the theoretical Bragg angle and the second diffraction peak position corresponding to each detection point. The second oblique angle component is a signed angle value. When the second oblique angle component is greater than 0, it indicates that the crystal plane normal at that detection point is deflected in the positive direction relative to the normal of the surface under test in the second crystal orientation plane; when the second oblique angle component is less than 0, it indicates deflection in the negative direction; the absolute value of the first oblique angle component reflects the degree of deflection.

[0043] S260. Calculate the chamfer angle of each detection point based on the first chamfer angle component and the second chamfer angle component of each detection point.

[0044] The angular deviation between the surface to be measured and the crystal plane being measured is the bevel angle. The cosine of the first bevel angle component and the cosine of the second bevel angle component at each detection point can be calculated to obtain the corresponding intermediate value. The inverse cosine of each intermediate value is then calculated to obtain the bevel angle at each detection point. In other words, the bevel angle is determined based on the following formula: ; in, For the first i The oblique angle of each detection point, For the first i The first oblique angle component of each detection point For the first iThe second oblique angle component of each detection point.

[0045] S270. Based on the chamfer angle and corresponding coordinates of each detection point, generate the chamfer angle characterization result of the surface to be tested.

[0046] S270 is the same as S140 above, and will not be described again here.

[0047] Based on the above embodiments, the technical solution provided in this embodiment uses the theoretical Bragg angle as a reference benchmark, and calculates the oblique angle components of each detection point in the first and second crystal directions based on the difference between the measured first and second diffraction peak positions in two mutually perpendicular crystal directions and the theoretical Bragg angle. This makes the final synthesized oblique angle contain in-plane vector information of oblique size and oblique azimuth angle. Compared with the method of only obtaining a single direction projection or directly reading the peak position offset, it significantly improves the completeness and accuracy of oblique angle characterization, thereby strongly supporting the fine control of large-size wafer epitaxial process and the improvement of device performance consistency.

[0048] refer to Figure 4 , Figure 4 This is a flowchart of another method for measuring the distribution of beveled edges on a wafer, provided in an embodiment of the present invention. The method for measuring the distribution of beveled edges on a wafer includes: S310. Transform the coordinates of each detection point when acquiring the second rocking curve spectrum to the same coordinate system as when acquiring the first rocking curve spectrum.

[0049] S320. Associate each coordinate, the first rocking curve spectrum corresponding to the coordinate, and the second rocking curve spectrum corresponding to the coordinate to obtain the first rocking curve spectrum and the second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, and the first crystal orientation and the second crystal orientation are perpendicular to each other.

[0050] In the process of obtaining the first and second rocking curve spectra of each detection point based on rocking curve testing, the rocking curve test can be performed on each detection point at the first azimuth angle to obtain the first rocking curve spectra of each detection point; then the wafer can be rotated around its normal direction to the second azimuth angle, and the rocking curve test can be performed again at the same detection points to obtain the second rocking curve spectra of each detection point.

[0051] For example, refer to Figure 5 and Figure 6L is the reference edge of the wafer. Setting the first azimuth angle φ1 = 0°, a rocking curve test is performed sequentially at each detection point to obtain the first rocking curve spectrum for each detection point, thus obtaining the first diffraction peak position for each detection point. The wafer 100 is rotated 90° counterclockwise around its normal direction, changing the azimuth angle to the second azimuth angle φ2 = 90°. Maintaining multiple identical detection points (i.e., identical physical positions), a multi-point rocking curve test is performed on the wafer 100 to obtain the second rocking curve spectrum for each detection point, thus obtaining the second diffraction peak position for each detection point.

[0052] Establish a Cartesian coordinate system with the wafer center as the origin. The coordinate system corresponding to the first set of data (φ1=0°) can be used as the target coordinate system. For the second set of data (φ2=90°), since the wafer has rotated 90° counterclockwise around its normal, the coordinates (x') of each detection point recorded at this time... i y' i) These are the values ​​of the original physical points in the rotated coordinate system. To align the second set of data with the first set of data to the same coordinate system (target coordinate system), the second set of coordinates is transformed by rotating it 90° clockwise. The transformation formula is as follows: ; ; coordinates (x) i y i The coordinates of the detection points are aligned with the coordinate system of the first set of data after the coordinate transformation. After the above transformation, the coordinates of each detection point in the second set of data are in the same coordinate system as the first set of data, thus achieving a one-to-one correspondence between the same physical point in the two sets of data.

[0053] For example, for wurtzite GaN and SiC with a (0001) crystal plane, the <11-20> direction (a-axis) and the <1-100> direction (m-axis) are two orthogonal crystal directions within the basal plane. Based on the wafer reference edge markings, let the first bevel angle component... The first oblique angle component corresponding to azimuth angle φ1=0° The corresponding crystal orientation is orthogonal to it.

[0054] S330. Based on the first and second rocking curve spectra of each detection point, determine the first and second diffraction peak positions corresponding to each detection point.

[0055] After coordinate matching is completed, record the same physical point location. i The corresponding peak position angle at the first azimuth angle (i.e., the first diffraction peak position is ω) i，φ1=0° The peak position angle at the second azimuth angle (i.e., the second diffraction peak position is ω) and the peak position angle at the second azimuth angle (i.e., the second diffraction peak position is ω). i，φ2=90° ).

[0056] S340, Obtain the theoretical Bragg angle of the wafer.

[0057] S340 is the same as S230 above, and will not be described again here.

[0058] S350. Based on the theoretical Bragg angle and the first diffraction peak position of each detection point, the first oblique angle component of each detection point is obtained.

[0059] The first oblique angle component of each detection point is determined using the following formula: S360. Based on the theoretical Bragg angle and the second diffraction peak position of each detection point, the second oblique angle component of each detection point is obtained.

[0060] The second oblique angle component of each detection point is determined using the following formula: S370. Calculate the chamfer angle of each detection point based on the first chamfer angle component and the second chamfer angle component of each detection point.

[0061] S380. Based on the chamfer angle and corresponding coordinates of each detection point, generate the chamfer angle characterization result of the surface to be tested.

[0062] S370-S380 are the same as S260-S270 mentioned above, and will not be described again here.

[0063] Based on the above embodiments, the technical solution provided in this embodiment transforms the coordinates of each detection point when acquiring the second rocking curve spectrum to the same coordinate system as the coordinates when acquiring the first rocking curve spectrum. This allows the spectrum data obtained after two rocking curve tests along different crystal orientations at the same detection point to achieve precise correspondence in a unified coordinate system, thereby effectively avoiding the coordinate misalignment problem caused by the rotation of the wafer between tests at different azimuth angles. At the same time, no manual matching or correction is required during the data processing stage, reducing the complexity and error probability of data processing.

[0064] refer to Figure 7 , Figure 7 This is a flowchart of another method for measuring the distribution of beveled edges on a wafer, provided in an embodiment of the present invention. The method for measuring the distribution of beveled edges on a wafer includes: S410. Obtain the first rocking curve spectrum and the second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, and the first crystal orientation and the second crystal orientation are perpendicular to each other.

[0065] S420. Based on the first and second rocking curve spectra of each detection point, determine the first and second diffraction peak positions corresponding to each detection point.

[0066] S430, Obtain the theoretical Bragg angle of the wafer.

[0067] S440. Based on the theoretical Bragg angle and the first diffraction peak position of each detection point, the first oblique angle component of each detection point is obtained.

[0068] S450. Based on the theoretical Bragg angle and the second diffraction peak position of each detection point, the second oblique angle component of each detection point is obtained.

[0069] S460. Calculate the chamfer angle of each detection point based on the first chamfer angle component and the second chamfer angle component of each detection point.

[0070] S410-S460 are the same as S210-S260 mentioned above, and will not be described again here.

[0071] In this embodiment, the oblique angle characterization results include a distribution map of the combined oblique angle size and a distribution map of the oblique angle azimuth, with coordinates including the horizontal axis and the vertical axis.

[0072] S470. Based on the x-coordinate, y-coordinate, and oblique angle of each detection point, generate a distribution map of the size of the combined oblique angle.

[0073] refer to Figure 8 It shows a distribution map of the bevel angle of a 2-inch gallium nitride substrate, which is a pseudo-color image showing the bevel angle of the detection points. θ i,total The spatial distribution of the bevel angle is shown in the figure. The horizontal and vertical axes represent the position coordinates of the detection points on the wafer plane, respectively. The color depth or color gradation represents the size of the bevel angle (unit: degree). This figure can intuitively reflect the global uniformity and spatial distribution trend of the absolute value of the bevel angle on the test surface of the wafer, which can facilitate the rapid identification of areas where the bevel angle is too large or too small, thus providing an intuitive basis for judging the wafer warping morphology.

[0074] S480. Determine the deflection angle of each detection point based on the first and second oblique angle components; generate an oblique angle azimuth distribution map based on the horizontal and vertical coordinates and the deflection angle of each detection point.

[0075] refer to Figure 9The diagram shows the azimuth distribution of the bevel angle of a 2-inch gallium nitride wafer. The azimuth distribution diagram uses the hue of a pseudo-color image to represent the spatial distribution of the bevel angle. The HSV color wheel model can be used for hue mapping so that the changes in angle values ​​correspond to the changes in the color wheel direction. This makes it easier to observe the spatial variation trend of the bevel direction within the wafer surface. The diagram can reveal the global regularity distribution characteristics of the bevel direction—including but not limited to radially consistent orientation along a certain crystal direction, concentric circular distribution around the wafer center, vortex-like twisting, or irregular random distribution, etc. This provides a directional information basis for analyzing wafer processing stress distribution and crystal orientation deviation.

[0076] The two distribution maps above complement each other in terms of "cutting amplitude" and "cutting direction" to characterize the cutting state of the wafer surface under test. Together they constitute a complete characterization result of the cut corner surface distribution. Based on this, abnormal crystal orientation deviation areas and their orientation characteristics on the wafer surface can be identified, providing comprehensive data support for the subsequent zonal control and optimization of epitaxial processes.

[0077] Furthermore, the specific steps of step S480 include: S4810. Determine the reference angle based on the sign of the second chamfer angle component; wherein, if the second chamfer angle component is greater than 0°, the reference angle is 90°; if the second chamfer angle component is less than 0°, the reference angle is 270°.

[0078] S4820. Calculate the ratio of the tangent of the first oblique angle component to the tangent of the second oblique angle component to obtain the tangent ratio.

[0079] S4830. Calculate the deflection mid-angle based on the tangent ratio, the first oblique angle component, and the second oblique angle component.

[0080] The following method can be used to determine the deflection midpoint angle: ① When the first oblique angle component is equal to 0° and the second oblique angle component is greater than 0°, determine the deflection mid-angle φ. i,total It equals 90°.

[0081] ② When the first oblique angle component is equal to 0° and the second oblique angle component is less than 0°, determine the deflection mid-angle φ. i,total It equals -90°.

[0082] ③ When the first oblique angle component is equal to 0° and the second oblique angle component is equal to 0°, it is determined that there is no oblique angle at the detection point.

[0083] ④ When the first oblique angle component is not equal to 0° and the second oblique angle component is not equal to 0°, the deflection mid-angle is determined based on the tangent ratio.

[0084] Deflection mid-angle φ i,total The following formula is used to obtain: S4840. Sum the reference angle and the deflection correction angle to obtain the deflection angle.

[0085] Specifically, the method for determining the deflection angle in this embodiment of the invention is as follows: A spatial rectangular coordinate system is established with the wafer surface normal direction as the Z-axis, the first crystal orientation as the X-axis, and the second crystal orientation as the Y-axis. Let the actual crystal plane normal space vector at a certain detection point on the wafer surface be... In an ideal, non-oblique-cut state, the direction of the crystal plane normal is the Z-axis direction.

[0086] Define the first oblique angle component of the detection point. For normal line The tilt component in the XZ plane represents the angular offset of the normal projection onto the X-axis direction; the second oblique angle component is defined. For normal line The tilt component in the YZ plane represents the angular offset of the normal projection onto the Y-axis. Therefore, the vector form of the resultant tangent vector in space can be expressed as ( , ).

[0087] Define the intermediate angle φ i,total The angle between the projection of the combined oblique vector onto the XY plane and the Y-axis is the signed angle, ranging from -90° to 90°. The deflection angle is the angle from the negative X-axis clockwise rotation to the projection of the combined oblique vector onto the XY plane, ranging from 0° to 360°.

[0088] Based on spatial geometric relationships, find the line. If the vertical component along the Z-axis is h, then the following condition is satisfied in the XZ plane: Satisfy on the YZ plane Therefore, we can conclude that: ; According to the intermediate angle φ i,total The definition of (the angle between the projection of the combined oblique vector onto the XY plane and the Y-axis) is given by its tangent value. ,therefore: ; ; In obtaining the middle angle Then, based on the second oblique angle component The sign determines the deflection angle. (No. i The reference angle (the deviation angle of each detection point): when When >0, it indicates that the combined oblique tangent vector is located in the upper half of the XY plane (positive Y-axis side), and the reference angle is 90°; when When the angle is less than 0, it indicates that the combined oblique tangent vector is located in the lower half of the XY plane (the negative side of the Y-axis), and the reference angle is 270°. Adding the reference angle to the intermediate angle yields the deviation angle of the detection point. Quadrant correction is performed according to the following rules: when <0 and When the resultant tangent vector is greater than 0, the combined oblique tangent vector is located in the second quadrant (upper left region) of the XY plane. , The combined oblique vector is located to the left of the positive Y-axis, with a deflection angle of [angle missing]. The final range falls within the 0°~90° interval; when >0 and When the resultant oblique vector is greater than 0, the combined oblique tangent vector is located in the first quadrant (upper right region) of the XY plane. , The combined oblique vector is located to the right of the positive Y-axis, with a deflection angle of [missing information]. The final range falls within the 90°~180° range; when >0 and When <0, the combined oblique tangent vector is located in the fourth quadrant (lower right region) of the XY plane. , The combined oblique vector is located to the right of the negative Y-axis, with a deflection angle of [missing information]. The final range falls within the 180°~270° range; when <0 and When <0, the combined oblique tangent vector is located in the third quadrant (lower left region) of the XY plane. , The combined oblique vector is located to the left of the negative Y-axis, with a deflection angle of [missing information]. The final range falls within the 270°~360° range.

[0089] Using the above rules, the first oblique angle component of each detection point can be used as a basis. Second oblique angle component Determine its bias angle The angle of deviation Combined oblique angle θ i,total Together, they constitute a complete vector description of the oblique tangent state at this point.

[0090] Based on the above embodiments, optionally, the method for measuring the wafer bevel facet distribution provided by the present invention further includes at least one of the following steps: S10. Based on the first and second oblique angle components of each detection point, determine the height gradient of each detection point; based on the height gradient of each detection point, calculate the relative height of the crystal plane of each detection point relative to the reference plane; based on the coordinates of each detection point and its corresponding relative height, generate a relative height distribution map.

[0091] wafer surface i Height gradient at each detection point The following relationship is satisfied between the shear angle component and the oblique angle component: ; When the bevel angle is small (usually referring to...) , (All angles are less than 5°), so a small angle approximation can be used to simplify the above relationship as follows: ;in, and The calculation must be performed using radians as the unit.

[0092] After obtaining the height gradient of each detection point, the relative height distribution of the wafer surface relative to the reference plane is reconstructed using a two-dimensional numerical integration method. The two-dimensional numerical integration method includes, but is not limited to: least-squares fitting-based integration, path integration (e.g., integrating along the X-axis and Y-axis directions separately and then weighted averaging), or surface reconstruction based on spline interpolation.

[0093] refer to Figure 10 This diagram illustrates the relative height distribution of a 2-inch gallium nitride (GaN) wafer. Presented as a two-dimensional pseudo-color image, the horizontal and vertical axes represent the positions of the detection points on the wafer plane, with color depth or gradation indicating the relative height value (in micrometers) of that point. This relative height distribution diagram can quantitatively characterize the macroscopic warpage morphology of the wafer, including but not limited to typical warpage shapes such as saddle-shaped, pot-shaped, and single-sided tilted warpages. This provides a direct morphological basis for wafer processing stress distribution and subsequent temperature and airflow control in epitaxial processes.

[0094] S20. Based on the coordinates of each detection point and its corresponding relative height, generate a three-dimensional crystal plane bending diagram.

[0095] The reconstructed relative height distribution from step S10 is used as a 3D surface to construct a 3D visualization model of the wafer facets. (Reference) Figure 11This paper presents a three-dimensional warping map of a 2-inch gallium nitride wafer. This map displays the relative height changes at various points on the wafer surface in the form of a three-dimensional curved surface, visually demonstrating the degree of warping and the continuity of local orientation changes. Compared to two-dimensional pseudo-color images, the three-dimensional warping map not only shows the magnitude of height changes but also clearly displays the slope direction and curvature characteristics of the warping. This facilitates the identification of the dominant deformation mode and the area of ​​maximum deformation, providing a more comprehensive visualization tool for the evaluation of wafer geometry.

[0096] S30. Based on the first and second chamfer components of each detection point, calculate the unit normal vector of each detection point on the wafer surface; based on the coordinates of each detection point and its corresponding unit normal vector, generate a surface normal vector map.

[0097] The following formula is used to calculate the first wafer surface... i The unit normal vector of each detection point: ; in, Let be the unit normal vector of the i-th detection point. Let be the chamfer angle at this detection point. When the chamfer angle is small, it can be simplified using a small angle approximation as follows: ; and The calculation must be performed using radians as the unit.

[0098] refer to Figure 12 This diagram illustrates the surface normal vector map of a 2-inch gallium nitride wafer. The map plots the normal vector at each point on the wafer plane grid as either 3D arrows or 2D projected arrows. The arrow direction indicates the horizontal direction of the normal's projection onto the wafer surface, and the arrow length indicates the size of the bevel angle. The surface normal vector map visually displays the global distribution characteristics of the normal orientation at various locations on the wafer surface, including regions of uniformity and abrupt changes in normal orientation, revealing the spatial variation patterns of crystal orientation deviations.

[0099] Based on the above embodiments, optionally, before obtaining the first rocking curve spectrum and the second rocking curve spectrum corresponding to each detection point, the method further includes: determining the point spacing according to the diameter of the wafer; dividing the surface to be tested of the wafer into multiple detection areas distributed in a grid pattern according to the point spacing; wherein, the distance from the detection area located in the edge region of the wafer to the edge of the wafer is greater than or equal to 2 mm, and the detection area corresponds one-to-one with the detection point.

[0100] Specifically, the test point spacing is first determined based on the diameter of the wafer to be tested. Test point spacing refers to the center-to-center distance between adjacent test points. For example, for wafers with a diameter greater than or equal to 2 inches, the test point spacing can be set to 2 mm; for wafers with a diameter less than or equal to 1 inch, the test point spacing can be set to 1 mm. A smaller spacing allows for more test points and higher spatial resolution, but the total testing time increases accordingly; conversely, a larger spacing results in higher testing efficiency, but lower spatial resolution.

[0101] After determining the spacing between the detection points, the surface of the wafer to be tested is divided into multiple detection areas distributed in a grid pattern. The grid pattern refers to dividing the wafer surface into several rectangular (preferably square) unit regions using equally spaced vertical and horizontal grids; each unit region is a detection area. The center point of each detection area is the corresponding detection point coordinate.

[0102] It is worth noting that the distance from the detection area located at the wafer edge to the wafer edge is greater than or equal to 2 mm. Because the wafer edge region is prone to edge chipping, stress concentration, or geometric deformation during processing and cutting, the bevel angle test results in this region may deviate from the true crystal orientation distribution of the wafer. Therefore, the detection area at the edge region is recessed at least 2 mm inwards from the wafer to ensure that all detection points are within the effective testing area of ​​the wafer, thereby eliminating the interference of edge effects on the detection results and improving the reliability and accuracy of the bevel angle surface distribution characterization.

[0103] Please see Figure 13 , Figure 13 This is a schematic diagram of the structure of a measuring device provided in an embodiment of the present invention. The measuring device 1 includes a memory and a processor 11 connected to each other. The memory is used to store computer programs. When the computer programs are executed by the processor 11, they are used to implement the method for measuring the wafer bevel angle distribution as described in any embodiment of the present invention.

[0104] Measuring device 1 is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. Measuring device 1 can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the invention described and / or claimed herein.

[0105] The memory can be a read-only memory (ROM) 12, a random access memory (RAM) 13, etc. The processor 11, ROM 12 and RAM 13 are connected to each other via a bus 14, and the input / output (I / O) interface 15 is also connected to the bus 14.

[0106] In some embodiments, the method for measuring the wafer bevel facet distribution can be implemented as a computer program tangibly contained in memory, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed on the measurement device 1 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the method for measuring the wafer bevel facet distribution described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to perform the method for measuring the wafer bevel facet distribution by any other suitable means (e.g., by means of firmware).

[0107] The measuring device 1 also includes multiple components connected to the I / O interface 15, including: an input unit 16 (e.g., keyboard, mouse, etc.), an output unit 17 (e.g., various types of displays, speakers, etc.), a storage unit 18 (e.g., disk, optical disk, etc.), and a communication unit 19 (e.g., network card, modem, wireless transceiver, etc.). The communication unit 19 allows the measuring device 1 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0108] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above.

[0109] Reference Figure 2 and Figure 14 The present invention also provides a detection system, which includes a measuring device 1 and an X-ray diffractometer 2 connected to each other. The measuring device 1 is the measuring device described in any embodiment of the present invention. The X-ray diffractometer 2 includes a sample stage 50, an X-ray source 10 and a pointed slit 30.

[0110] The sample stage 50 is used to support the wafer 100; the X-ray source 10 is used to generate X-rays; the pointed slit 30 is disposed between the X-ray source 10 and the sample stage 50 to confine the X-ray spot within the detection area of ​​the wafer 100.

[0111] Furthermore, the X-ray source 10 is also equipped with a monochromator 40 to filter out other stray wavelength components and obtain a monochromatic X-ray beam, thereby improving the accuracy and resolution of diffraction peak positioning.

[0112] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. A method for measuring the distribution of beveled facets on a wafer, characterized in that, The wafer has multiple detection points on its surface to be tested, and the method includes: Obtain a first rocking curve spectrum and a second rocking curve spectrum corresponding to each detection point; wherein, the first rocking curve spectrum is the rocking curve spectrum corresponding to the first crystal orientation of the wafer, and the second rocking curve spectrum is the rocking curve spectrum corresponding to the second crystal orientation of the wafer, wherein the first crystal orientation and the second crystal orientation are perpendicular to each other. Based on the first rocking curve spectrum and the second rocking curve spectrum of each detection point, the first diffraction peak position and the second diffraction peak position corresponding to each detection point are determined respectively. Based on the first diffraction peak position and the second diffraction peak position of each detection point, the oblique cutting angle of each detection point is determined; Based on the chamfer angle and corresponding coordinates of each detection point, the chamfer angle characterization result of the surface to be tested is generated.

2. The method for measuring the distribution of wafer bevel facets according to claim 1, characterized in that, The step of determining the oblique angle of each detection point based on the first diffraction peak position and the second diffraction peak position of each detection point includes: Obtain the theoretical Bragg angle of the wafer; Based on the theoretical Bragg angle and the first diffraction peak position of each detection point, the first oblique angle component of each detection point is obtained; Based on the theoretical Bragg angle and the second diffraction peak position of each detection point, the second oblique angle component of each detection point is obtained; The chamfer angle of each detection point is calculated based on the first chamfer angle component and the second chamfer angle component of each detection point.

3. The method for measuring the distribution of wafer bevel facets according to claim 2, characterized in that, The step of calculating the chamfer angle of each detection point based on the first chamfer angle component and the second chamfer angle component of each detection point includes: Calculate the product of the cosine of the first chamfer component and the cosine of the second chamfer component for each detection point to obtain the corresponding intermediate value; Calculate the arccosine value of each of the intermediate values ​​to obtain the oblique angle of each of the detection points; And / or, obtaining the first swing curve spectrum and the second swing curve spectrum corresponding to each of the detection points includes: Transform the coordinates of each detection point when acquiring the second rocking curve spectrum and the coordinates when acquiring the first rocking curve spectrum to the same coordinate system; By associating each coordinate, the corresponding first oscillation curve spectrum, and the corresponding second oscillation curve spectrum, a first oscillation curve spectrum and a second oscillation curve spectrum corresponding to each detection point are obtained.

4. The method for measuring the distribution of wafer bevel facets according to claim 2, characterized in that, The oblique angle characterization result includes a distribution map of the combined oblique angle size and a distribution map of the oblique angle azimuth. The coordinates include an abscissa and a ordinate. Based on the oblique angle of each detection point and its corresponding coordinates, the oblique angle characterization result of the surface to be tested is generated, including: Based on the x-coordinate, y-coordinate, and oblique angle of each detection point, a distribution map of the size of the combined oblique angle is generated; The bias angle of each detection point is determined based on the first and second oblique angle components of each detection point. Based on the x-coordinate, y-coordinate, and yaw angle of each detection point, the oblique angle azimuth distribution map is generated.

5. The method for measuring the distribution of wafer bevel facets according to claim 4, characterized in that, The step of determining the deviation angle of each detection point based on the first and second oblique angle components of each detection point includes: The reference angle is determined based on the sign of the second oblique angle component; Calculate the ratio of the tangent of the first shear angle component to the tangent of the second shear angle component to obtain the tangent ratio. Calculate the deflection mid-angle based on the tangent ratio, the first shear angle component, and the second shear angle component; The deflection angle is obtained by summing the reference angle and the deflection correction angle.

6. The method for measuring the distribution of wafer bevel facets according to claim 5, characterized in that, The step of calculating the deflection mid-angle based on the tangent ratio, the first shear angle component, and the second shear angle component includes: When the first chamfer angle component is equal to 0° and the second chamfer angle component is greater than 0°, the deflection mid-angle is determined to be equal to 90°. When the first chamfer angle component is equal to 0° and the second chamfer angle component is less than 0°, the deflection mid-angle is determined to be equal to -90°. When the first chamfer angle component is equal to 0° and the second chamfer angle component is equal to 0°, it is determined that the detection point has no chamfer angle. When the first chamfer angle component is not equal to 0° and the second chamfer angle component is not equal to 0°, the deflection mid-angle is determined based on the tangent ratio value; And / or, if the second chamfer angle component is greater than 0°, the reference angle is 90°; if the second chamfer angle component is less than 0°, the reference angle is 270°.

7. The method for measuring the distribution of wafer bevel facets according to claim 2, characterized in that, The method for measuring the distribution of the beveled facets of the wafer further includes at least one of the following steps: Based on the first and second bevel angle components of each detection point, the height gradient of each detection point is determined; based on the height gradient of each detection point, the relative height of the crystal plane of each detection point relative to the reference plane is calculated; based on the coordinates of each detection point and its corresponding relative height, a relative height distribution map is generated. A three-dimensional crystal plane bending diagram is generated based on the coordinates of each detection point and its corresponding relative height. Based on the first chamfer angle component and the second chamfer angle component of each detection point, calculate the unit normal vector of each detection point on the wafer surface; A surface normal vector map is generated based on the coordinates of each detection point and its corresponding unit normal vector.

8. The method for measuring the distribution of wafer bevel facets according to claim 1, characterized in that, Before obtaining the first and second swing curve spectra corresponding to each detection point, the method further includes: The dot spacing is determined based on the diameter of the wafer; The test surface of the wafer is divided into multiple detection areas in a grid pattern by the point spacing; wherein the distance from the detection area located in the edge region of the wafer to the edge of the wafer is greater than or equal to 2 mm, and the detection area corresponds one-to-one with the detection point.

9. A measuring device, characterized in that, It includes an interconnected memory and a processor, the memory being used to store a computer program, which, when executed by the processor, is used to implement the method as described in any one of claims 1-8.

10. A detection system, characterized in that, The device includes an interconnected measuring apparatus and an X-ray diffractometer, wherein the measuring apparatus is the measuring apparatus of claim 9, and the X-ray diffractometer comprises: The sample stage is used to hold the wafers. An X-ray source used to generate X-rays; A pointed slit is positioned between the X-ray source and the sample stage to confine the X-ray spot within the detection area of ​​the wafer.

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