Material deposition assembly and method of depositing material on a substrate

Abstract

A material deposition assembly (100) for depositing material on a substrate arranged in a substrate plane (15) in a vacuum deposition chamber is described. The material deposition assembly comprises a first vapor distribution pipe (120-1) having a first nozzle row (130-1) for directing a plume (140-1) of vapor of a first material onto the substrate plane and a second nozzle row (130-2) for directing a plume (140-2) of vapor of the first material onto the substrate plane; a second vapor distribution pipe (120-2) having a third nozzle row (130-3) for directing a plume (140-3) of vapor of a second material onto the substrate plane and a fourth nozzle row (130-4) for directing a plume (140-4) of vapor of the second material onto the substrate plane. The first nozzle row (130-1) and the third nozzle row (130-3) are configured to deposit a first mixed sublayer comprising the first material and the second material onto the substrate, and the second nozzle row (130-2) and the fourth nozzle row (130-4) are configured to deposit a second mixed sublayer comprising the first material and the second material on top of the first mixed sublayer on the substrate moving in the substrate plane relative to the material deposition assembly.

Description

Technical Field

[0001] This disclosure relates to a material deposition assembly for depositing materials on a substrate, and a method for depositing materials on a substrate. Specifically, embodiments relate to a material deposition assembly for depositing materials for OLED layer stacks on a substrate, such as metallic materials for providing electrode layers, particularly a cathode layer. Furthermore, this disclosure relates to organic light-emitting diode display devices manufactured using the methods of this disclosure. Background Technology

[0002] An organic light-emitting diode (OLED) is a type of light-emitting diode in which the electroluminescent layer is an organic compound film that emits light in response to an electric current. Because OLEDs emit light directly without the need for backlighting or color filters, OLED displays offer a wider color gamut and viewing angle than traditional LCD displays. Furthermore, OLEDs can be fabricated on flexible substrates, making them suitable for a wide variety of applications. OLEDs are used to manufacture television screens, computer monitors, mobile phones, and other handheld devices to display information. OLEDs can also be used for general spatial lighting. For example, an OLED display may include an organic material layer located between two electrodes deposited on a substrate in a manner that forms a matrix display panel with individually excitable pixels.

[0003] Organic and metallic materials are deposited onto a substrate in a vacuum deposition chamber used for OLED manufacturing. The metallic materials are used, for example, as electrode materials or electron transport layer (ETL) materials. The materials to be deposited are evaporated in a material deposition setup, and the evaporated material is deposited onto the substrate through a nozzle.

[0004] Metal evaporators can be used, for example, in the production of organic light-emitting diodes (OLEDs). However, other applications also utilize evaporators to deposit metal layers, such as on large-area substrates. For example, co-evaporation of two or more metals or metal alloys can be provided. For instance, an OLED display may include an organic material layer located between two electrodes deposited on a substrate. One electrode may include a transparent conductive layer, such as ITO or other transparent conductive oxide (TCO) materials. The second electrode may include a metal or metal alloy.

[0005] OLED display devices typically include subpixels to provide improved performance. Subpixels may be defined by overhanging structures extending above a substrate. Subpixel circuitry is fabricated on the substrate to obtain a drivable subpixel. Typically, a cathode is deposited on the organic material of the subpixel. The cathode material is at least partially deposited behind the overhanging structure, for example, to provide cathode contacts with a cathode layer having a contact structure.

[0006] In view of the foregoing, it would be beneficial to provide an improved material deposition assembly and manufacturing method suitable for OLED manufacturing. Specifically, it would be beneficial to improve the material deposition assembly and the method of depositing material on the substrate so as to provide a metal cathode behind the overhanging structure that may define the pixels of the OLED display device. Summary of the Invention

[0007] In view of the foregoing, according to the independent claims, a material deposition assembly, a method for depositing material on a substrate, and an OLED device are provided. Further aspects, advantages, and features of this disclosure will be apparent from the claims, the description, and the drawings.

[0008] According to one aspect, a material deposition assembly is provided for depositing material on a substrate arranged in a substrate plane. The material deposition assembly includes a first vapor distribution pipe in fluid communication with a first evaporation crucible, and includes a first nozzle row for guiding a vapor plume from a first nozzle row to the substrate plane and a second nozzle row for guiding a vapor plume from a second nozzle row to the substrate plane, wherein the vapor plumes from the first and second nozzle rows are vapor plumes of a first material. The material deposition assembly further includes a second vapor distribution pipe in fluid communication with a second evaporation crucible, and includes a third nozzle row for guiding a vapor plume from a third nozzle row to the substrate plane and a fourth nozzle row for guiding a vapor plume from a fourth nozzle row to the substrate plane, wherein the vapor plumes from the third and fourth nozzle rows are vapor plumes of a second material. The first and third nozzle rows are configured to deposit a first mixed sublayer comprising a first material and a second material onto a substrate that moves relative to the material deposition assembly in a substrate plane; and the second and fourth nozzle rows are configured to deposit a second mixed sublayer comprising the first material and the second material onto the first mixed sublayer on the substrate that moves relative to the material deposition assembly in a substrate plane.

[0009] Specifically, the first nozzle row of the first vapor distribution pipe and the third nozzle row of the second vapor distribution pipe can be guided to deposit a first mixed sublayer on the substrate. The second nozzle row of the first vapor distribution pipe and the fourth nozzle row of the second vapor distribution pipe can be guided to deposit a second mixed sublayer on the substrate. In particular, both the first and second mixed sublayers can be deposited in a single pass of the substrate relative to the material deposition assembly. For example, during layer deposition, the substrate can move past the material deposition assembly, or the material assembly can move past the substrate.

[0010] In some embodiments, the first material and / or the second material may be metals, particularly different metals, and the first and second mixed sublayers may be two sublayers of the cathode layer. The cathode layer may be a mixed layer comprising the first and second materials in a predetermined mixing ratio.

[0011] According to some embodiments described herein, a cathode layer can be deposited behind two opposing guide overhangs on a substrate during a single pass of the substrate through a material deposition assembly.

[0012] In some embodiments, the nozzles of the first and third nozzle rows are tilted relative to the normal direction of the substrate plane ("substrate plane normal") to deposit a first material and a second material below the first overhang, while the nozzles of the second and fourth nozzle rows may be tilted in the opposite direction relative to the normal direction of the substrate plane to deposit the first material and the second material below the second overhang. The second overhang may face a different direction than the first overhang. Specifically, the nozzles of the first and third nozzle rows may be tilted in opposite directions to the nozzles of the second and fourth nozzle rows to provide a primary evaporation direction tilted in opposite directions relative to the normal direction of the substrate.

[0013] According to one aspect, a material deposition assembly is provided for depositing material on a substrate arranged in a substrate plane. The material deposition assembly includes a first vapor distribution pipe in fluid communication with a first evaporation crucible and comprising a first nozzle row for guiding a vapor plume of a first material to the substrate plane and a second nozzle row for guiding a vapor plume of the first material to the substrate plane; and one or two second vapor distribution pipes in fluid communication with at least one second evaporation crucible and comprising a third nozzle row for guiding a vapor plume of a second material to the substrate plane and a fourth nozzle row for guiding a vapor plume of the second material to the substrate plane. The first and third nozzle rows are configured to deposit a first mixed sublayer comprising the first and second materials onto a substrate moving relative to the material deposition assembly in the substrate plane; and the second and fourth nozzle rows are configured to deposit a second mixed sublayer comprising the first and second materials on top of the first mixed sublayer on the substrate moving relative to the material deposition assembly in the substrate plane.

[0014] According to another aspect, a method for depositing material on a substrate is provided, particularly utilizing a material deposition assembly according to any embodiment described herein. The material deposition assembly includes a first vapor distribution pipe having a first nozzle row and a second nozzle row, and a second vapor distribution pipe adjacent to the first vapor distribution pipe (or optionally, two second vapor distribution pipes adjacent to the first vapor distribution pipe on opposite sides thereof), having a third nozzle row and a fourth nozzle row. The method includes: conveying a substrate relative to the material deposition assembly in a substrate plane while guiding a first material from the first and second nozzle rows toward the substrate, and guiding a second material from the third and fourth nozzle rows toward the substrate; wherein the first and third nozzle rows are guided such that a first mixed sublayer comprising the first and second materials is deposited onto the substrate, and the second and fourth nozzle rows are guided such that a second mixed sublayer comprising the first and second materials is deposited onto the substrate on top of the first mixed sublayer.

[0015] In some embodiments, a first and second hybrid sublayer are deposited onto a substrate in a single pass of the substrate relative to the material deposition assembly. In some embodiments, the first and third vapor plumes do not overlap or intersect with, or substantially do not substantially overlap with, the second and fourth vapor plumes, such that the first and second hybrid sublayers are deposited on top of each other. Specifically, the first hybrid sublayer may include particles guided from the first and third nozzle rows, but not particles guided from the second and fourth nozzle rows, and / or the second hybrid sublayer may include particles guided from the second and fourth nozzle rows, but not particles guided from the first and third nozzle rows.

[0016] According to another aspect, an organic light-emitting diode (OLED) display is provided. The OLED display includes a substrate having a plurality of pixels, each pixel including a cathode layer. The cathode layer includes a first hybrid sublayer of a first material and a second material, and a second hybrid sublayer of the first material and the second material over the first hybrid sublayer. In some embodiments, the cathode layer may be manufactured according to any of the methods described herein, and / or using any of the material deposition components described herein.

[0017] The embodiments also relate to apparatus for performing the disclosed methods, and include apparatus components for performing each of the method aspects. The method aspects can be performed by hardware components, a computer programmed with appropriate software, any combination of both, or any other means. Furthermore, the embodiments also relate to methods for operating the apparatus. Methods for operating the apparatus include method aspects for performing each function of the apparatus. The embodiments also relate to methods for manufacturing processed substrates (particularly coated substrates) in the vacuum deposition system described herein, and substrates manufactured according to the methods and / or using the system described herein, such as OLED substrates, particularly OLED display devices. Furthermore, devices other than OLED displays can also be manufactured using the apparatus and methods described herein. Attached Figure Description

[0018] To enable a detailed understanding of the features listed above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to embodiments. The accompanying drawings illustrate embodiments of this disclosure and are described below:

[0019] Figure 1 A schematic top view of a vacuum deposition system with a material deposition assembly according to an embodiment is shown;

[0020] Figure 2 A schematic side view of a material deposition assembly according to an embodiment is shown;

[0021] Figure 3 Showing a cross-sectional view of a material deposition assembly according to an embodiment;

[0022] Figure 4 A more detailed cross-sectional view of the material deposition assembly according to an embodiment is shown;

[0023] Figure 5 Showing a cross-sectional view of a material deposition assembly according to a further embodiment;

[0024] Figure 6 Showing a cross-sectional view of a material deposition assembly according to a further embodiment;

[0025] Figure 7 Showing a cross-sectional view of a material deposition assembly according to a further embodiment;

[0026] Figure 8 A method for depositing material on a substrate using a material deposition assembly according to an embodiment is shown; and

[0027] Figure 9 A schematic diagram showing a substrate with OLED layer stacks manufactured according to the methods of this disclosure and / or using the components of this disclosure. Detailed Implementation

[0028] Reference will now be made in detail to various embodiments, one or more of which are illustrated in the figures. The examples are provided by way of illustration and are not intended to be limiting. For example, features illustrated or described as part of one embodiment may be used in or in combination with any other embodiment to produce another further embodiment. This disclosure is intended to include such modifications and variations. In the following description of the drawings, the same reference numerals refer to the same or similar parts. Generally, only differences relative to individual embodiments are described. Unless otherwise stated, the description of a part or aspect of one embodiment may also be applied to a corresponding part or aspect of another embodiment.

[0029] A vacuum deposition chamber is a vacuum chamber configured for vacuum deposition of materials on a substrate, such as for the deposition of metal materials used in the manufacture of OLED displays, for example, to form electrodes, particularly cathodes.

[0030] As used herein, the term "vacuum" can be understood in the sense of a technical vacuum as a vacuum pressure less than, for example, 10 mbar. Typically, the pressure in the vacuum chamber described herein can be 10 mbar. -5 mbar and approximately 10 -8 Between mbar.

[0031] In this disclosure, a "crucible" can be understood as an apparatus having a reservoir for evaporating material by heating the crucible. Therefore, a "crucible" can be understood as a source material reservoir that can be heated to evaporate the source material into material vapor by evaporation. The crucible may include a heater for evaporating the source material in the crucible into a gaseous material (i.e., vapor material). For example, the material to be initially evaporated may be in powder or granular form. The reservoir may have an internal volume for containing the source material to be evaporated, such as a metallic material. Specifically, the crucible may include a heating unit configured to heat the source material provided in the internal volume of the crucible to the temperature at which the source material evaporates. For example, the crucible may be a crucible for evaporating metallic materials.

[0032] The embodiments described herein particularly relate to depositing materials on a substrate, for example, for display manufacturing to produce OLED devices.

[0033] Figure 9 For schematic cross-sectional view, two portions of an OLED layer stack 760 on a substrate 10 fabricated using OLED pixel patterning technology according to the method described herein are shown. Adjacent pixel definition layer (PDL) structures 715 are formed on the upper surface of the substrate 10 and define pixel regions 13, while a dangling structure 720 is disposed on the PDL structure. The dangling structure 720 includes a lower portion 720B having sidewalls and an upper portion 720A having a dangling portion that partially protrudes from the lower portion 720B above the pixel regions 13. Figure 9 In the diagram, the sidewall 11 of the adjacent pixel region 13 is schematically depicted, while the overhang 12 partially protrudes from the sidewall 11 above the pixel region 13. The pixel region 13 is surrounded by two or more sidewalls, and the overhang may be formed on the sidewalls and partially protrude from different sides above the pixel region 13. Figure 9 In the pixel region 13, a first overhang 190-R is provided on a first side, and a second overhang 190-L is provided on a second side. The first overhang and the second overhang face different directions, specifically facing each other, and a pixel region is arranged between them.

[0034] By depositing various materials onto a defined area extending from the pixel region to below the overhang 12, combined with subsequent etching / patterning, individually switchable pixels can be formed on the substrate. Depositing metal and organic layers into the predetermined area, particularly below the overhang, is challenging.

[0035] The lower portion 720B having sidewall 11 may be made of a conductive material intended to contact the cathode layer 710 of the OLED layer stack 760 and to allow the cathode layer 710 to be connected to a cathode potential. Alternatively or additionally, at least a portion of the sidewall 11 may include an auxiliary cathode 716 intended to contact the cathode layer 710 of the OLED layer stack 760. The upper portion 720A forming the overhang 12 may be made of a non-conductive inorganic material, or alternatively, a conductive inorganic material.

[0036] The OLED layer stack 760 typically includes, in the following order, an anode layer 714, a hole injection layer 718, at least one organic layer 713 (made of one or more organic materials), an electron injection layer 712, and a cathode layer 710.

[0037] At least one organic layer 713, hole injection layer 718, and electron injection layer 712 do not substantially contact the sidewall 11, while the cathode layer 710 contacts the sidewall 11 below the overhang 12. To ensure that the lower layer does not substantially contact the sidewall 11 below the overhang, the corresponding vapor plume 732 may be shaped differently from the metal vapor plume 731 forming the cathode layer 710 (e.g., having different angles and / or different tilt angles relative to the substrate normal). For example, the metal vapor plume 731 may have a larger angle and / or a stronger tilt angle than the vapor plume of the lower layer (e.g., the organic vapor plume).

[0038] like Figure 9As shown, according to some embodiments described herein, the cathode layer 710 includes a first mixed sublayer 701 (comprising a first metal and a second metal, such as Mg and Ag) and a second mixed sublayer 702 (comprising a first metal and a second metal) deposited generally above the first mixed sublayer 701. Both the first and second mixed sublayers may comprise the same material, particularly the first and second materials co-deposited as described herein. The first mixed sublayer 701 may provide a reliable cathode contact below the first overhang 190-R, while the second mixed sublayer 702 may provide a reliable cathode contact below the second overhang 190-L, or vice versa. Together, the first and second mixed sublayers may form a uniform cathode layer of the OLED layer stack, comprising the first and second materials in a substantially uniform mixing ratio.

[0039] In view of the foregoing, methods and apparatus are described herein, based on embodiments thereof, to reliably deposit the layers of an OLED layer stack onto a substrate, particularly onto a substrate having a hanger structure formed thereon. Some methods described herein improve the electrical contact between the cathode layer and the lower sidewalls of the hangers, particularly the electrical contact with the lower sidewalls of the first hanger 190-R and the second hanger 190-L facing opposite directions, for example, provided on opposite sides of the pixel region. However, the embodiments described herein are not limited to the fabrication of OLED layers and can be used to deposit other layers or layer stacks on various types of substrates.

[0040] Figure 1 A schematic top view shows a vacuum deposition system 1000 according to an embodiment described herein, having a material deposition assembly 100 in a first vacuum chamber 1001. The vacuum deposition system 1000 may optionally include one or more further vacuum chambers that can accommodate one or more further evaporation sources, such as a second evaporation source 102. The vacuum deposition system 1000 may include five, ten, or more than ten evaporation sources for coating the substrate in multiple layers. The evaporation sources may be configured to coat a vertically oriented or substantially vertically oriented substrate, which is transported on a substrate transport track 1013. Alternatively, one or more evaporation sources may be configured to coat a non-vertically oriented substrate, such as a horizontally oriented substrate. Multiple materials may be sequentially deposited onto the substrate, including one or more inorganic materials, particularly metals, and one or more organic materials, to provide layer stacks, particularly OLED layer stacks, on the substrate. For example, the vacuum deposition system 1000 may include ten or more evaporation sources for coating the substrate in multiple layers.

[0041] The vacuum deposition system 1000 may include a substrate transport track 1013 configured to move a substrate 10 along a substrate transport path T, passing it past a material deposition assembly 100 and optionally a further evaporation source. The substrate transport track 1013 may extend at least partially through a first vacuum chamber 1001 and through an optional further vacuum chamber, and may include a substrate transport system configured for substrate transport, such as a roller conveyor system, one or more linear motors, and / or a magnetic levitation system adapted to move the substrate relative to and past the evaporation source. During transport and / or deposition, the substrate may be carried by a substrate carrier 1020.

[0042] Therefore, an in-line deposition system is provided that allows multiple layers to be deposited sequentially on a substrate as it moves through a vacuum deposition system 1000 past multiple evaporation sources.

[0043] The embodiments described herein specifically relate to material deposition, such as for display fabrication on large-area substrates. According to some embodiments, the large-area substrate or the carrier supporting one or more substrates may have a diameter of 1 m. 2 Or larger sizes. For example, the deposition system can be adapted to process large-area substrates, such as GEN 5 substrates, which correspond to approximately 1.4 μm. 2 The substrate (1.1 m x 1.3 m), GEN 6, corresponds to approximately 2.7 m. 2 (1.5m x 1.8m), GEN 7.5, which corresponds to approximately 4.29 m. 2 The substrate (1.95 m x 2.2 m), GEN 8.5, corresponds to approximately 5.7 m. 2 The substrate (2.2 m x 2.5 m), or even GEN 10, corresponds to approximately 8.7 m. 2 The substrate (2.85 m x 3.05 m) is used. Even larger generations, such as GEN 11 and GEN 12, and the corresponding substrate areas, can be similarly achieved. Alternatively or additionally, according to this disclosure, the semiconductor wafer can also be processed and coated in a deposition system.

[0044] Figure 2A material deposition assembly 100 of an embodiment described herein is schematically shown in a side view. The material deposition assembly 100 may have a crucible 121 configured to evaporate different source materials (e.g., a host material and a dopant material, or two different metals) for co-deposition onto a substrate, and a vapor distribution tube configured to guide the evaporated source material to the substrate through a plurality of nozzles. For example, a vapor distribution tube or pipe may provide a line source having a plurality of nozzles arranged in a row (or “line array”) along the length of the vapor distribution tube. The nozzle row may be provided along the longitudinal direction V of the vapor distribution tube (typically a substantially vertical direction, or alternatively a non-vertical direction, such as a horizontal direction) to provide a substantially vertical line source, or alternatively a substantially horizontal line source. Each vapor distribution tube may have at least one row of nozzles, particularly two rows of nozzles, adapted to coat a substrate having a substantially vertical orientation. Alternatively, one or more vapor distribution tubes of the material deposition assembly may be configured to coat a substrate with a non-vertical orientation, such as a horizontally oriented or substantially horizontally oriented substrate.

[0045] As used in this article, "generally vertical direction" refers to a direction corresponding to or deviating from the direction of gravity by less than 10°. "Generally horizontal direction" refers to a direction that is horizontal by + / - 10°.

[0046] In some embodiments, the crucible may be located at the bottom of a corresponding steam distribution pipe for feeding material steam into the steam distribution pipe from below (“bottom feed”). In some embodiments, such as Figure 2 As shown, the crucible may be located between the bottom and top of the corresponding steam distribution pipe, for example, in the middle or center position, for feeding material steam into the steam distribution pipe in the center position (“center feed”).

[0047] The vapor distribution tube may have a housing, a hollow space, or a tube, in which evaporated material is supplied or guided, for example, from a crucible to a nozzle. According to embodiments that may be combined with any other embodiments described herein, the length of the distribution tube may at least correspond to the height of the substrate to be deposited. Specifically, the length of the distribution tube may be longer than the height of the substrate to be deposited, by at least 10% or even 20%. For example, the source material to be deposited may be a metallic material used as an electrode material or an electron transport layer material in the production of organic light-emitting diodes (OLEDs).

[0048] like Figure 2 The schematic depiction shows that the material deposition assembly 100 includes a first vapor distribution pipe 120 and (at least) a second vapor distribution pipe. Figure 2 Not shown in the middle, but Figure 3As shown in the diagram, the first vapor distribution pipe extends in the longitudinal direction V and includes a nozzle array 130 for depositing a first material onto the substrate 10. The second vapor distribution pipe extends in the longitudinal direction V and is adjacent to the vapor distribution pipe 120. The second vapor distribution pipe has a nozzle array for depositing a second material onto the substrate. The material deposition assembly may optionally have additional vapor distribution pipes. The nozzles in each nozzle array can be as follows: Figure 2 As schematically depicted, a nozzle array arranged substantially vertically, for example, with 20 or more nozzles per nozzle row. The material deposition assembly 100 can be configured to deposit at least two different materials, such as two different metals, onto a substrate using two or more vapor distribution pipes arranged adjacent to each other. The vapor distribution pipes can be arranged on a source body 113, which can optionally be rotatable about a rotation axis.

[0049] Figure 3 A cross-sectional view, particularly a horizontal cross-section, shows a material deposition assembly 100 according to an embodiment. The material deposition assembly 100 is configured to deposit a first material and a second material on a substrate 10 disposed in a substrate plane 15 and in front of the material deposition assembly 100. Typically, the substrate 10 moves through the material deposition assembly 100 along a substrate transport path T.

[0050] The material deposition assembly 100 includes a first vapor distribution pipe 120-1 for guiding a first material to a substrate plane 15 (i.e., onto the substrate 10) and a second vapor distribution pipe 120-2 for guiding a second material to the substrate plane 15 (i.e., onto the substrate 10). The first vapor distribution pipe 120-1 is in fluid communication with a first material crucible for evaporating the first material, while the second vapor distribution pipe 120-2 is in fluid communication with a second material crucible for evaporating the second material.

[0051] The first steam distribution pipe 120-1 includes a first nozzle row 130-1 and a second nozzle row 130-2, both of which are configured to guide the first material to the substrate 10. The second steam distribution pipe 120-2 includes a third nozzle row 130-3 and a fourth nozzle row 130-4, both of which are configured to guide the second material to the substrate 10.

[0052] The first nozzle array 130-1 and the third nozzle array 130-3 are configured to deposit a first mixed sublayer comprising a first material and a second material onto a substrate 10 moving through the material deposition assembly 100. The second nozzle array 130-2 and the fourth nozzle array 130-4 are configured to deposit a second mixed sublayer comprising the first material and the second material onto the substrate 10 moving through the material deposition assembly 100. The second mixed sublayer is typically deposited over the first mixed sublayer (except for the edge region below the overhang, where only one of the first and second mixed sublayers may be present, such as...). Figure 9 As shown). Specifically, as Figure 3 As schematically shown, both the first hybrid sublayer and the second hybrid sublayer can be deposited on the substrate 10 in a single pass through the material deposition assembly 100.

[0053] like Figure 3 Schematic illustration: A first nozzle array 130-1 may be configured to guide a first material from a first vapor distribution pipe 120-1 onto a first region 110-R in a substrate plane 15, while a third nozzle array 130-3 may be configured to guide a second material onto a third region in the substrate plane that substantially overlaps with the first region 110-R, to deposit a first mixed sublayer. Specifically, the first and third regions may substantially coincide with the first sublayer deposition region comprised of the first and third regions. The overlap area between the first region and the first sublayer deposition region may be 90% or more of the first sublayer deposition region, and the overlap area between the third region and the first sublayer deposition region may be 90% or more of the first sublayer deposition region.

[0054] The second nozzle array 130-2 can be configured to guide the first material onto the second region 110-L in the substrate plane 15, while the fourth nozzle array 130-4 can be configured to guide the second material onto a fourth region in the substrate plane that substantially overlaps with the second region 110-L, to deposit a second mixed sublayer on top of the first mixed sublayer. Specifically, the second and fourth regions can substantially coincide with the second sublayer deposition region composed of the second and fourth regions. The overlap area between the second region and the second sublayer deposition region can be 90% or more of the second sublayer deposition region, and the overlap area between the fourth region and the second sublayer deposition region can also be 90% or more of the second sublayer deposition region. Providing good overlap between the first and third regions in the substrate plane ensures uniform mixing of the first and second materials throughout the first mixed material sublayer, while providing good overlap between the second and fourth regions in the substrate plane ensures uniform mixing of the first and second materials throughout the second mixed material sublayer. Overall, a good mixture of the first and second materials can be provided in both the first and second hybrid sublayers, and the hybrid sublayers can constitute a cathode layer.

[0055] In some embodiments that can be combined with other embodiments described herein, the first region 110-R and the second region 110-L in the substrate plane do not substantially overlap, in particular, they do not overlap at all, i.e., they are different from each other. Specifically, the first region 110-R (= the “first sublayer deposition region” as defined above) and the second region 110-L (= the “second sublayer deposition region” as defined above) are substantially different from each other. The overlap area of ​​the first region 110-R and the second region 110-L may be less than 10% of the first region and less than 10% of the second region. By providing the first sublayer deposition region and the second sublayer deposition region that are different from each other in the substrate plane, two defined sublayers can be deposited on top of each other, in particular the first material and the second material in the two sublayers have a substantially constant mixing ratio, and in particular the first material and the second material have a substantially constant mixing ratio throughout the two-layer system, which can constitute a cathode layer.

[0056] In some embodiments, the nozzles of the first nozzle row 130-1 and the third nozzle row 130-3 are oriented toward a first lateral side relative to the normal 112 of the substrate plane, while the nozzles of the second nozzle row 130-2 and the fourth nozzle row 130-4 are oriented toward a second lateral side relative to the normal 112 of the substrate plane, and away from the first lateral side. Specifically, as Figure 3 As shown, the nozzle channels of the nozzles in the first and third nozzle rows can be inclined toward a first side relative to the substrate plane normal 112, particularly to increase deposition below the first overhang 190-R, while the nozzle channels of the nozzles in the second and fourth nozzle rows can be inclined toward a second side away from the first side relative to the substrate plane normal 112, particularly to increase deposition below the second overhang 190-L, wherein the first and second overhangs can face different directions, for example, facing each other above the pixel region.

[0057] In some embodiments, the nozzles of the first nozzle row 130-1 have a first principal evaporation direction (which may generally correspond substantially to the length direction of the corresponding nozzle channel), inclined at a first angle (α1) relative to the substrate plane normal 112, the first angle being in the range of 10° to 80°, particularly between 30° and 70°, more particularly about 55°, and / or the nozzles of the third nozzle row 130-3 may have a third principal evaporation direction, inclined at a third angle relative to the substrate plane normal 112, the third angle being in the range of 10° to 80°, particularly between 20° and 60°, more particularly about 45°. Specifically, the first and third angles defining the inclination of the nozzles of the first and third nozzle rows relative to the substrate plane normal 112 can be guided to provide good overlap in the substrate plane of the vapor plume 140-1 emitted by the first nozzle row 130-1 and the vapor plume 140-3 emitted by the third nozzle row 130-3, while ensuring oblique evaporation to the region below the first overhang 190-R. In some embodiments, the absolute value of the first angle is greater than the absolute value of the third angle to improve overlap.

[0058] In some embodiments, the nozzles of the second nozzle row 130-2 have a second principal evaporation direction (which may generally correspond substantially to the length direction of the corresponding nozzle channel), inclined at a second angle (α2) relative to the substrate plane normal 112, the second angle being in the range of -10° to -80°, particularly between -30° and -70°, more particularly about -55°, and / or the nozzles of the fourth nozzle row 130-4 may have a fourth principal evaporation direction, inclined at a fourth angle relative to the substrate plane normal 112, the fourth angle being in the range of -10° to -80°, particularly between -20° and -60°, more particularly about -45°. Specifically, the second and fourth angles defining the inclination of the nozzles of the second and fourth nozzle rows relative to the substrate plane normal 112 can be guided to provide good overlap in the substrate plane between the steam plumes 140-2 emitted by the second nozzle row 130-2 and the steam plumes 140-4 emitted by the fourth nozzle row 130-4, while ensuring oblique evaporation to the region below the second overhang 190-L. In some embodiments, the absolute value of the second angle is greater than the absolute value of the fourth angle to improve overlap.

[0059] In some embodiments, the first angle and the second angle may have substantially the same absolute value, but have opposite signs relative to the substrate plane normal 112, and / or the third angle and the fourth angle may have substantially the same absolute value, but have opposite signs relative to the substrate plane normal 112.

[0060] In some embodiments, the material deposition assembly 100 may be configured to be substantially symmetrical with respect to a plane of symmetry 112 (particularly a vertically extending plane of symmetry) perpendicular to the substrate plane 15. Specifically, a first vapor distribution pipe 120-1 having a first nozzle row and a second nozzle row may be substantially symmetrical with respect to the plane of symmetry, while a second vapor distribution pipe 120-2 having a third nozzle row and a fourth nozzle row (which may be as follows) Figure 6 (Optionally replaced by two second steam distribution pipes 120-2) can be substantially symmetrical with respect to the plane of symmetry. By providing a symmetrical deposition assembly, the layer uniformity and layer configuration of the layers deposited by the material deposition assembly can be improved.

[0061] In some implementations, the nozzles of the first and / or second nozzle rows emit steam plumes with a plume angle (β) (in the lateral direction) ranging from 10° to 80°, particularly from 20° to 50°, for example, about 30°. Alternatively or additionally, the nozzles of the third and / or fourth nozzle rows emit steam plumes with a plume angle (in the lateral direction) ranging from 20° to 90°, particularly from 30° to 60°, for example, about 45°. In some embodiments, the (lateral) plume angle (β) may be defined by a corresponding former shield disposed between the nozzle rows and the substrate plane, the former shield being configured to define the lateral width of the steam plume. In some embodiments, the plume angles of the nozzles of the first and second nozzle rows are smaller than those of the nozzles of the third and fourth nozzle rows to improve the overlap provided by the first and third nozzle rows, and / or to improve the overlap provided by the second and fourth nozzle rows.

[0062] A larger plume angle (in the lateral direction L) ensures that at least one edge of the steam plume will enter the region below the overhang. However, an excessively large angle can lead to reduced layer uniformity and unwanted stray coating in the vacuum chamber. The combination of the aforementioned plume angle range with the nozzle tilt angle range ensures good layer uniformity while guaranteeing deposition below the overhang region, such as ensuring reliable cathode contacts.

[0063] It should be noted that in some embodiments, the plume angle is defined by a shield (i.e., by a “former arrangement”), which may be positioned between the vapor distribution pipe and the substrate plane (see [reference]). Figures 4 to 7The shield can block the lateral edges of the steam plume, for example, to improve plume overlap between the steam plumes of the first and third nozzle rows and between the steam plumes of the second and fourth nozzle rows, and / or to prevent plume overlap between the steam plumes of the first and second nozzle rows. In some embodiments, the shield is configured to ensure that the steam plumes emitted by the nozzle rows strike predetermined areas in the plane of the substrate.

[0064] Specifically, the material deposition assembly may include a shaper arrangement disposed between the first and second vapor distribution pipes and the substrate plane, wherein the shaper arrangement may include two or more substantially vertically extending slit openings, such as one vertical slit opening per nozzle row, to define the lateral plume angle and / or limit the lateral edges of the vapor plumes emitted by the first, second, third, and fourth nozzle rows. Shaper arrangement 160 is shown in... Figures 4 to 7 .

[0065] In some embodiments that can be combined with other embodiments described herein, the first nozzle row 130-1 and the second nozzle row 130-2 of the first steam distribution pipe 120-1 are generally arranged between the third nozzle row 130-3 and the fourth nozzle row 130-4 of the second steam distribution pipe 120-2, such as... Figure 3 The illustration is illustrative, or vice versa. Specifically, the four nozzle rows may be located in the same plane or substantially in the same plane (which may extend parallel to the substrate plane 15), wherein the first and second nozzle rows are arranged between the third and fourth nozzle rows. Thus, while the first and second hybrid sublayers are deposited on the substrate, the substrate can be moved sequentially through the third, first, second, and fourth nozzle rows. A compact and space-saving material deposition assembly can be provided.

[0066] In some implementations, the second steam distribution pipe 120-2 is arranged at least partially around the periphery of the first steam distribution pipe 120-1, particularly at least partially around the first steam distribution pipe 120-1, especially at an angle of 90° or greater, more particularly at an angle of 120° or greater, or even about 180°. Specifically, the second steam distribution pipe 120-2 may surround the first steam distribution pipe 120-1 on its two or three sides, for example at an angle of 120° or greater, or about 180°. When the second steam distribution pipe 120-2 partially surrounds the first steam distribution pipe 120-1, the first and second nozzle rows of the first steam distribution pipe 120-1 may be arranged between the third and fourth nozzle rows of the second steam distribution pipe 120-2, and a compact and space-saving material deposition assembly may be provided, the material deposition assembly comprising two steam distribution pipes configured to deposit two layers of mixed material.

[0067] Furthermore, when two or more walls of the first steam distribution pipe extend abutting each other, and particularly parallel to two or more walls of the second steam distribution pipe, heat can be reliably transferred between the second and first steam distribution pipes, thereby reducing the overall heating effort. For example, heat from the second steam distribution pipe, which partially surrounds the first steam distribution pipe, can be transferred to the first steam distribution pipe, which is arranged adjacent to it on several sides, making a reduced number of heaters sufficient for heating the first steam distribution pipe. In some embodiments, the first steam distribution pipe may be passively (or indirectly) heated by the second steam distribution pipe, such that, for example, the first steam distribution pipe may not require an internal heater.

[0068] In some embodiments that can be combined with other embodiments described herein, the first material may have a first vaporization temperature, while the second material may have a second vaporization temperature higher than the first vaporization temperature. The first vapor distribution pipe may be passively or indirectly heated by the second vapor distribution pipe. For example, the first vaporization temperature may be below 1000°C, and the first material may be magnesium, and / or the second vaporization temperature may be above 1000°C, and the second material may be silver. In some embodiments, the internal volume of the first vapor distribution pipe is maintained in a temperature range of 400°C to 800°C, while the internal volume of the second vapor distribution pipe is maintained in a temperature range of 1000°C to 1400°C.

[0069] Specifically, in some embodiments, the second steam distribution pipe 120-2, instead of the first steam distribution pipe 120-1, may include an internal heater configured to directly heat the second steam distribution pipe 120-2 and indirectly heat the first steam distribution pipe 120-1.

[0070] In some implementations, the first vapor distribution pipe 120-1 is at least partially arranged in the space between the second vapor distribution pipe 120-2 and the substrate plane 15. Specifically, the second vapor distribution pipe 120-2 may surround the first vapor distribution pipe 120-1 on the rear side (viewed from the substrate plane) and at least partially on its two lateral sides, i.e., before and after the first vapor distribution pipe in the substrate transport direction. A compact material deposition assembly can be provided, and a single second material crucible is sufficient to supply the second material to the two nozzle rows of the second vapor evaporation pipes arranged on both sides of the first vapor distribution pipe in the substrate transport direction. Furthermore, thermal energy can be saved.

[0071] In some embodiments, the distances between the first and second nozzle rows and the substrate plane 15 may be in the range of 100 mm to 300 mm; and the distances between the third and fourth nozzle rows and the substrate plane 15 may be in the range of 100 mm to 300 mm. Specifically, the distances between the first, second, third, and fourth nozzle rows and the substrate plane 15 may be substantially equal, particularly in the range of 100 mm to 300 mm.

[0072] According to the embodiments described herein, cathode contacts can be provided below the first overhang and the second overhang on opposite sides of the pixel region, such as... Figure 9 The diagram schematically depicts a first hybrid material layer of the cathode layer providing a good cathode contact below a first overhang, and a second hybrid material layer of the cathode layer providing a good cathode contact below a second overhang, the first and second overhangs being provided on opposite sides of the pixel region.

[0073] Furthermore, it can improve material mixing within the cathode layer (including the region behind the overhang) and ensure high material utilization. In addition, it can provide a compact material deposition assembly.

[0074] In some embodiments, the material deposition assembly may include more than two vapor distribution tubes, such as one or more additional vapor distribution tubes for depositing additional materials (such as ytterbium) on the substrate to provide an electron injection layer, for example, below the cathode layer.

[0075] Figure 4 Showing a cross-section of a material deposition assembly 100 according to some embodiments of the present disclosure. The material deposition assembly 100 is generally similar to Figure 3 The material deposition assembly 100 is described above and will not be repeated here. The material deposition assembly 100 includes a first steam distribution pipe 120-1, which has a first nozzle row 130-1 and a second nozzle row 130-2.

[0076] The multiple nozzles of the first nozzle row 130-1 are perpendicular to Figure 4 The cross-section shown extends. Each nozzle in the first nozzle row 130-1 may have a nozzle corresponding to point M. Figure 4 The orthogonal projection on the cross-section shown. Multiple nozzles of the second nozzle row 130-2 are perpendicular to... Figure 4 The cross-section shown extends. Each nozzle in the second nozzle row 130-2 may have a nozzle corresponding to point N. Figure 4 Orthogonal projection on the cross-section shown.

[0077] The material deposition assembly 100 also includes a second vapor distribution pipe 120-2, which has a third nozzle row 130-3 and a fourth nozzle row 130-4. The plurality of nozzles in the third nozzle row 130-3 are perpendicular to... Figure 4 The cross-section shown extends. Each nozzle in the third nozzle row 130-3 may have a nozzle corresponding to point P. Figure 4 The orthogonal projection on the cross-section shown. Multiple nozzles of the fourth nozzle row 130-4 are perpendicular to... Figure 4 The cross-section shown extends. Each nozzle in the fourth nozzle row 130-4 may have a nozzle corresponding to point Q. Figure 4 Orthogonal projection on the cross-section shown.

[0078] The material deposition assembly 100 is configured to deposit a first material and a second material onto a substrate disposed in a substrate plane 15, which is also perpendicular to the substrate plane. Figure 4 The first nozzle row 130-1, the second nozzle row 130-2, the third nozzle row 130-3 and the fourth nozzle row 130-4 extend substantially parallel to the substrate plane 15.

[0079] The vapor of the first material is guided within the first steam distribution pipe 120-1 and reaches the nozzles of the first nozzle row 130-1 and the second nozzle row 130-2. The first material can be guided onto the substrate through the first nozzle row 130-1 and the second nozzle row 130-2.

[0080] The nozzles of the first nozzle row 130-1 are configured to guide the steam plume 140-1 of the first nozzle row onto the substrate plane 15. Therefore, the steam plume 140-1 of the first nozzle row is a steam plume of the first material. The nozzles of the second nozzle row 130-2 are configured to guide the steam plume 140-2 of the second nozzle row onto the substrate plane 15. Therefore, the steam plume 140-2 of the second nozzle row is a steam plume of the first material.

[0081] The steam plume 140-1 of the first nozzle row 130-1 is a steam plume emitted by the nozzles of the first nozzle row. The steam plume 140-1 of the first nozzle row 130-1 may have up to Figure 4 The projection on the cross-section shown is formed by the region defined by triangle AMC. The primary evaporation direction provided by the first nozzle row 130-1 is parallel to line MB.

[0082] The steam plume 140-2 of the second nozzle row 130-2 is a steam plume emitted by the nozzles of the second nozzle row. The steam plume 140-2 of the second nozzle row 130-2 can have up to Figure 4 The projection on the cross-section shown is formed by the region defined by triangle DNF. The primary evaporation direction provided by the second nozzle row 130-2 is parallel to line NE.

[0083] The second steam distribution pipe 120-2 is in fluid communication with a second evaporation crucible configured to evaporate a second material different from the first material. The steam of the second material is guided through the second steam distribution pipe 120-2 and reaches the nozzles of the third nozzle row 130-3 and the fourth nozzle row 130-4.

[0084] The nozzles of the third nozzle row 130-3 are configured to guide the steam plume 140-3 of the third nozzle row onto the substrate plane 15. Therefore, the steam plume 140-3 of the third nozzle row is a steam plume of the second material. The nozzles of the fourth nozzle row 130-4 are configured to guide the steam plume 140-4 of the fourth nozzle row onto the substrate plane 15. Therefore, the steam plume 140-4 of the fourth nozzle row is a steam plume of the second material.

[0085] The steam plume 140-3 of the third nozzle row 130-3 is a steam plume emitted by the nozzles of the third nozzle row. The steam plume 140-3 of the third nozzle row 130-3 can have up to Figure 4 The projection on the cross-section shown is formed by the region defined by triangle APC. The main evaporation direction provided by the third nozzle row 130-3 is parallel to line PB.

[0086] The steam plume 140-4 of the fourth nozzle row 130-4 is a steam plume emitted by the nozzles of the fourth nozzle row. The steam plume 140-4 of the fourth nozzle row 130-4 can have up to Figure 4 The projection on the cross-section shown is formed by the region defined by triangle DQF. The primary evaporation direction provided by the fourth nozzle row 130-4 is parallel to line QE.

[0087] In some embodiments, one or more heat shields 150-1 may be provided between the first steam distribution pipe and the second steam distribution pipe, and / or one or more heat shields 150-2 may be provided on the outer side of the second steam distribution pipe opposite to the first steam distribution pipe.

[0088] The second steam distribution pipe 120-2 may be provided with an internal heater 180 to control the temperature inside the second steam distribution pipe. In some embodiments, the first steam distribution pipe 120-1 is passively heated by the heat from the second steam distribution pipe 120-2.

[0089] A forming device arrangement 160 can be provided between the first steam distribution pipe and the second steam distribution pipe and the substrate plane 15 to properly form a steam plume.

[0090] As the substrate moves relative to the material deposition assembly in the substrate plane 15, particularly in a single pass, the first nozzle row 130-1 and the third nozzle row 130-3 are configured to deposit a first mixed sublayer comprising a first material and a second material onto the substrate, while the second nozzle row 130-2 and the fourth nozzle row 130-4 are configured to deposit a second mixed sublayer onto the substrate. Figure 4 In the illustrated embodiment, the substrate can move within the substrate plane 15. The substrate passes along points C, B, A, D, E, and F, i.e., relative to... Figure 4 The cross-section moves from right to left in the plane 15 of the substrate.

[0091] A first mixed sublayer of the first and second materials is deposited onto the substrate in the first region 110-R of the substrate plane 15. A second mixed sublayer of the first and second materials is deposited on top of the first mixed sublayer onto the substrate in the second region 110-L of the substrate plane 15 (however, in the edge region below the overhang, it is possible that only one of the first and second mixed sublayers may be present, such as...). Figure 9 (As shown).

[0092] According to some embodiments, as the substrate moves through the material deposition assembly in the substrate plane 15, a first hybrid sublayer is deposited by a first nozzle row and a third nozzle row, and then (immediately) a second hybrid sublayer is deposited on top of the first hybrid sublayer by a second nozzle row and a fourth nozzle row.

[0093] The primary evaporation direction provided by the first nozzle row 130-1 and the primary evaporation direction provided by the third nozzle row 130-3, i.e., along the directions of MB and PB respectively, as well as the lateral plume opening angle of the nozzles of the first and third nozzle rows, can be selected such that both the steam plume 140-1 of the first nozzle row and the steam plume 140-3 of the third nozzle row substantially intersect the substrate plane 15 in the same first region 110-R of the substrate plane 15. The lateral plume opening can be appropriately adjusted by the forming device arrangement 160, which can cut the lateral edge of the steam plume.

[0094] The primary evaporation directions provided by the second nozzle row 130-2 and the fourth nozzle row 130-4, i.e., along the directions NE and QE respectively, and the lateral plume angles with the nozzles of the second and fourth nozzle rows, can be selected such that both the steam plumes 140-2 and 140-4 of the second and fourth nozzle rows substantially intersect the substrate plane 15 in the same second region 110-L of the substrate plane 15. The lateral plume angles can be appropriately adjusted by a forming arrangement 160 that can cut the lateral edges of the steam plumes.

[0095] The main evaporation directions of the first nozzle row 130-1 and the third nozzle row 130-3 can be configured such that the first material and the second material are at least partially guided behind the first overhang 190-R of the OLED device arranged on the first side of the pixel region.

[0096] The main evaporation directions of the second nozzle row 130-2 and the fourth nozzle row 130-4 can be configured such that the first material and the second material are at least partially guided behind the second overhang 190-L of the OLED device, wherein the second overhang and the first overhang are provided on opposite sides of the pixel region and face each other.

[0097] As the substrate moves in the substrate plane, the overhang structure moves with the substrate. Therefore, by moving the substrate past the material deposition assembly, a mixed sublayer of the first and second materials is deposited behind the first overhang 190-R and the second overhang 190-L, and also behind a plurality of other first overhangs facing a first direction that provide and define a plurality of pixel regions on the substrate, and behind a plurality of other second overhangs facing a second direction.

[0098] Specifically, the steam plume 140-1 of the first nozzle row 130-1 combines with the steam plume 140-3 of the third nozzle row 130-3 to deposit a first mixed sublayer below the first overhang 190-R; and the steam plume 140-2 of the second nozzle row 130-2 combines with the steam plume 140-4 of the fourth nozzle row 130-4 to deposit a second mixed sublayer below the second overhang 190-L.

[0099] Therefore, as the substrate moves within the substrate plane, particularly during a single pass of the substrate through the material deposition assembly, the first and second materials can be deposited beneath the overhanging structure of the OLED device, which is provided on opposite sides of the pixel region and faces each other. Thus, an additional metal evaporation source may not be necessary for the cathode layer coated substrate reaching beneath the opposing overhanging structure.

[0100] Figure 5 Showing a cross-section of a material deposition assembly 200 according to a further embodiment. Figure 5 The material deposition assembly 200 shown is... Figure 4 The material deposition assembly 100 shown is similar, except that an internal heater 280 is also provided in the first steam distribution pipe 120-1.

[0101] Figure 6 Showing a cross-section of a material deposition assembly 300 according to some further embodiments. Figure 6 The embodiments shown are generally similar to Figure 3 and Figure 4The embodiments are similar, except that the (single) second steam distribution pipe is replaced by two separate second steam distribution pipes, which can be provided on different sides of the first steam distribution pipe.

[0102] Figure 6 The illustrated material deposition assembly 300 includes two second vapor distribution pipes 120-2L and 120-2R, rather than a single second vapor distribution pipe partially surrounding a first vapor distribution pipe. These two second vapor distribution pipes are arranged adjacent to the first vapor distribution pipe 120-1, particularly on opposite sides in the substrate transport direction. Each of the two second vapor distribution pipes has one of a third nozzle row and a fourth nozzle row. For example, the right-hand second vapor distribution pipe 120-2R may have a third nozzle row 130-3, while the left-hand second vapor distribution pipe 120-2L may have a fourth nozzle row 130-4.

[0103] A common second material crucible can be provided for evaporating the second material guided through the two second steam distribution pipes to the third and fourth nozzle rows. Alternatively, each of the two second steam distribution pipes may have its own respective second material crucible for evaporating the second material.

[0104] As previously described, the embodiment has a second steam distribution pipe partially arranged downstream of the first steam distribution pipe. Figure 6 The material deposition assembly 300 is configured to deposit a first mixed sublayer comprising a first material and a second material on a substrate using a first nozzle array 130-1 and a third nozzle array 130-3, and is configured to deposit a second mixed sublayer comprising the first material and the second material on the substrate using a second nozzle array 130-2 and a fourth nozzle array 130-4. Referring to the above description, it will not be repeated here. Specifically, in some embodiments, the first region 110-R (= first sublayer deposition region) in the substrate plane does not overlap with the second region 110-L (= second sublayer deposition region) in the substrate plane 15.

[0105] Figure 7 Showing a cross-section of a material deposition assembly 400 according to some further embodiments of the present disclosure.

[0106] Figure 7 The material deposition component 400 is roughly similar to Figure 6 The material deposition assembly 300 shown above is the same as described above and will not be repeated here. Figure 7In the illustrated embodiment, the first region 110-R and the second region 110-L in the substrate plane 15 are adjacent to each other, and the first and third nozzle rows are inclined towards each other, as are the second and fourth nozzle rows. Specifically, the main evaporation directions of the first and third nozzle rows may have different signs relative to the substrate plane normal 112, and / or the main evaporation directions of the second and fourth nozzle rows may have different signs relative to the substrate plane normal. Figure 7 In this embodiment, the deposition behind the overhang may be reduced and may be less uniform compared to the previous embodiment.

[0107] The material deposition assembly according to this disclosure is substantially symmetrical with respect to a plane of symmetry perpendicular to the substrate plane.

[0108] Figure 5 A method 500 for depositing material on a substrate using a material deposition assembly according to any embodiment of the present disclosure is shown.

[0109] Method 500 can be performed using a material deposition assembly according to any embodiment described herein.

[0110] Method 500 includes: transporting a substrate 502 through a material deposition assembly in a substrate plane 15, while simultaneously guiding a first material from a first nozzle row and a second nozzle row toward the substrate, and simultaneously guiding a second material from a third nozzle row and a fourth nozzle row toward the substrate.

[0111] The first and third nozzle rows are guided to deposit a first mixed sublayer comprising a first material and a second material onto the substrate, while the second and fourth nozzle rows are guided to deposit a second mixed sublayer comprising the first material and a second material onto the substrate on top of the first mixed sublayer.

[0112] In some embodiments, the steam plume 140-1 emitted by the first nozzle row 130-1 has a first principal evaporation direction, which is inclined relative to the substrate plane normal 112 at an angle ranging from 30° to 70°, particularly about 55°. Alternatively or additionally, the steam plume 140-3 emitted by the third nozzle row 130-3 may have a third principal evaporation direction, which is inclined relative to the substrate normal at an angle ranging from 20° to 60°, particularly about 45°. Alternatively or additionally, the steam plume 140-2 emitted by the second nozzle row 130-2 may have a second principal evaporation direction, which is inclined relative to the substrate normal at an angle ranging from -30° to -70°, particularly about -55°. Alternatively or additionally, the steam plume 140-4 emitted by the fourth nozzle row 130-4 may have a fourth principal evaporation direction, which is inclined relative to the substrate normal at an angle ranging from -20° to -60°, particularly about -45°.

[0113] In some implementations, the first material is a first metal, particularly magnesium (Mg), and / or the second material is a second metal, particularly silver (Ag). The crucible containing the first material can be a magnesium crucible, while the crucible containing the second material can be a silver crucible.

[0114] The first hybrid sublayer can form the lower part of the cathode layer of the OLED layer stack, while the second hybrid sublayer can form the upper part of the cathode layer of the OLED layer stack.

[0115] In some embodiments, the substrate includes a first overhang and a second overhang facing each other on opposite sides of the pixel region, wherein a first material and a second material are guided at least partially behind the overhangs. Specifically, a first hybrid sublayer may extend deeper below the first overhang than a second hybrid sublayer, and a second hybrid sublayer may extend deeper below the second overhang than the first hybrid sublayer, or vice versa. Good cathode contacts can be provided below both the first and second overhangs.

[0116] In some embodiments, the first steam distribution pipe 120-1 is passively heated by heat from one or two second steam distribution pipes. For example, the second steam distribution pipes may include an internal heater that also passively heats the first steam distribution pipe, while the first steam distribution pipe may not include an internal heater.

[0117] In some embodiments, the first material is magnesium and the second material is silver, particularly wherein the first and second mixed sublayers each have a silver-to-magnesium mixing ratio ranging from one part silver to one part magnesium (1:1) to ten parts silver to one part magnesium (10:1), particularly an Ag:Mg mixing ratio between 8:1 and 10:1, for example 9:1.

[0118] In some embodiments, the first temperature in the first steam distribution pipe is between 400°C and 800°C, particularly about 500°C, and / or the second temperature in the second steam distribution pipe is between 1000°C and 1400°C, particularly about 1200°C.

[0119] According to another aspect described herein, an OLED display device is provided, such as... Figure 9 As exemplarily shown, the OLED display device includes a substrate having a plurality of OLED pixels, each pixel including a cathode layer. The cathode layer is manufactured according to any of the methods described herein and / or using any of the material deposition components described herein.

[0120] The cathode layer includes a first hybrid sublayer and a second hybrid sublayer on top of the first hybrid sublayer. The first hybrid sublayer includes a first material and a second material, and the second hybrid sublayer includes a first material and a second material.

[0121] The first hybrid sublayer can reach deeper beneath the first overhang structure than the second hybrid sublayer. The second hybrid sublayer can reach deeper into the second overhang structure than the first hybrid sublayer. Specifically, as... Figure 9 As shown, in the edge region of the mixed sublayer below the overhang, only one of the first mixed sublayer and the second mixed sublayer may be deposited.

[0122] Therefore, in view of the embodiments described herein, improved evaporation source arrangements and improved coating methods are provided, particularly for “maskless” OLED pixel deposition without using fine metal masks, but rather for at least partially depositing multiple layers of OLED layer stacks at an angle below the overhang.

[0123] While the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is defined by the appended claims.

[0124] Specifically, this written specification uses examples to disclose this disclosure, including best practices, and also enables any person skilled in the art to practice the described subject matter, including making and using any apparatus or system, and performing any incorporated methods. While various specific embodiments have been disclosed for the foregoing, the non-mutually exclusive features of the above embodiments can be combined with each other. The patentable scope is defined by the claims, and other examples are intended to fall within the scope of the claims if a claim has structural elements that are not different from the literal language of the claim, or if a claim includes equivalent structural elements that are only substantially different from the literal language of the claim.

Claims

1. A material deposition assembly (100) for depositing material on a substrate arranged in a substrate plane (15) in a vacuum deposition chamber, the material deposition assembly comprising: A first steam distribution pipe (120-1) is in fluid communication with a first evaporation crucible and includes a first nozzle row (130-1) for guiding a steam plume (140-1) of a first nozzle row (130-1) to the first nozzle row on the substrate plane and a second nozzle row (130-2) for guiding a steam plume (140-2) of a second nozzle row (130-2) to the second nozzle row on the substrate plane, wherein the steam plumes of the first nozzle row and the second nozzle row are steam plumes of a first material; as well as The second steam distribution pipe (120-2) is in fluid communication with the second evaporation crucible and includes a third nozzle row (130-3) for guiding a steam plume (140-3) from the third nozzle row (130-3) to the substrate plane, and a fourth nozzle row (130-4) for guiding a steam plume (140-4) from the fourth nozzle row (130-4) to the substrate plane. The steam plumes from the third and fourth nozzle rows are steam plumes of a second material. The first nozzle row (130-1) and the third nozzle row (130-3) are configured to deposit a first mixed sublayer comprising the first material and the second material onto the substrate, which moves relative to the material deposition assembly in the substrate plane (15), and The second nozzle row (130-2) and the fourth nozzle row (130-4) are configured to deposit a second mixed sublayer comprising the first material and the second material on top of the first mixed sublayer on the substrate, which is moved relative to the material deposition assembly in the substrate plane (15).

2. The material deposition assembly of claim 1, wherein the first nozzle row (130-1) and the second nozzle row (130-2) are arranged between the third nozzle row (130-3) and the fourth nozzle row (130-4) in a direction generally parallel to the substrate plane (15).

3. The material deposition assembly of claim 1 or 2, wherein the second vapor distribution pipe (120-2) is arranged at least partially along the periphery of the first vapor distribution pipe (120-1) to at least partially surround the first vapor distribution pipe (120-1), particularly at an angle of 90° or greater, more particularly at 120° or greater.

4. The material deposition assembly as claimed in any one of claims 1 to 3, wherein The first steam distribution pipe (120-1) is at least partially arranged in the space between the second steam distribution pipe (120-2) and the substrate plane (15).

5. The material deposition assembly as claimed in any one of claims 1 to 4, wherein The first nozzle row (130-1) is configured to guide the first material onto a first region (110-R) in the substrate plane (15), and the third nozzle row (130-3) is configured to guide the second material onto a third region in the substrate plane that substantially overlaps with the first region (110-R), for depositing the first hybrid sublayer, and / or The second nozzle row (130-2) is configured to guide the first material to a second region (110-L) in the substrate plane (15), and the fourth nozzle row (130-4) is configured to guide the second material to a fourth region in the substrate plane that substantially overlaps with the second region (110-L), for depositing the second hybrid sublayer on the first hybrid sublayer.

6. The material deposition assembly of any one of claims 1 to 5, wherein the nozzles of the first nozzle row and the third nozzle row are oriented toward a first lateral side relative to the normal to the substrate plane; and The nozzles of the second nozzle row and the fourth nozzle row are oriented toward a second lateral side opposite to the first lateral side relative to the normal of the substrate plane.

7. The material deposition assembly as claimed in any one of claims 1 to 6, wherein the nozzles of the first nozzle row (130-1) provide a first principal evaporation direction inclined relative to the normal to the substrate plane, the angle of which ranges between 30° and 70°, particularly about 55°; and The nozzles of the third nozzle row (130-3) provide a third primary evaporation direction that is inclined relative to the normal of the substrate plane, with an angle ranging from 20° to 60°, particularly about 45°.

8. The material deposition assembly according to any one of claims 1 to 7, wherein the distance between the first nozzle row and the second nozzle row and the substrate plane (15) is in the range of 100 mm to 300 mm; and the distance between the third nozzle row and the fourth nozzle row and the substrate plane (15) is in the range of 100 mm to 300 mm, particularly wherein the distance between the first nozzle row, the second nozzle row, the third nozzle row and the fourth nozzle row and the substrate plane (15) is substantially equal.

9. The material deposition assembly of any one of claims 1 to 8, wherein the nozzles of the first nozzle row and the second nozzle row are configured to provide a steam plume with a plume angle ranging from 20° to 50°, and / or wherein the nozzles of the third nozzle row and the fourth nozzle row are configured to emit a steam plume with a plume angle ranging from 30° to 60°.

10. The material deposition assembly of any one of claims 1 to 9, the material deposition assembly further comprising a former arrangement (160) disposed between the first vapor distribution pipe and the second vapor distribution pipe and the substrate plane (15), the former arrangement comprising two or more substantially vertically extending slit openings for defining the plume angle and / or limiting the lateral edges of the steam plumes (140-1, 140-2, 140-3, 140-4) emitted by the first nozzle row, the second nozzle row, the third nozzle row and the fourth nozzle row (130-1, 130-2, 130-3, 130-4).

11. The material deposition assembly of any one of claims 1 to 10, wherein the second vapor distribution pipe (120-2) instead of the first vapor distribution pipe (120-1) includes an internal heater (180) configured to directly heat the second vapor distribution pipe (120-2) and indirectly heat the first vapor distribution pipe (120-1).

12. The material deposition assembly according to any one of claims 1 to 11, wherein the material deposition assembly is substantially symmetrical with respect to a plane of symmetry (112) extending perpendicular to the substrate plane (15).

13. A material deposition assembly (100, 200, 300, 400) for depositing material on a substrate arranged in a substrate plane, the material deposition assembly comprising: A first steam distribution pipe (120-1) is in fluid communication with a first evaporation crucible and includes a first nozzle array (130-1) for guiding a steam plume (140-1) of the first material to the substrate plane (15), and a second nozzle array (130-2) for guiding a steam plume (140-2) of the first material to the substrate plane (15); and One or two second steam distribution pipes (120-2, 120-2L, 120-2R) are in fluid communication with at least one second evaporation crucible and include a third nozzle row for guiding a steam plume of the second material to the substrate plane and a fourth nozzle row for guiding a steam plume of the second material to the substrate plane. The first nozzle row (130-1) and the third nozzle row are configured to deposit a first mixed sublayer comprising the first material and the second material onto the substrate, and the second nozzle row (130-2) and the fourth nozzle row are configured to deposit a second mixed sublayer comprising the first material and the second material on top of the first mixed sublayer on the substrate, which is moved relative to the material deposition assembly in the substrate plane (15).

14. A method for depositing material on a substrate using a material deposition assembly, the material deposition assembly comprising a first vapor distribution pipe (120-1) having a first nozzle row (130-1) and a second nozzle row (130-2), and comprising one or two second vapor distribution pipes (120-2) adjacent to the first vapor distribution pipe (120-1) and having a third nozzle row (130-3) and a fourth nozzle row (130-4), the method comprising: The substrate is transported through the material deposition assembly in the substrate plane (15), while a first material is guided from the first nozzle row and the second nozzle row toward the substrate, and a second material is guided from the third nozzle row and the fourth nozzle row toward the substrate; The first nozzle row and the third nozzle row are guided such that a first mixed sublayer comprising the first material and the second material is deposited onto the substrate, and The second nozzle row and the fourth nozzle row are guided such that a second mixed sublayer comprising the first material and the second material is deposited onto the substrate on top of the first mixed sublayer.

15. The method of claim 14, wherein the steam plume (140-1) emitted by the first nozzle array (130-1) has a first principal evaporation direction inclined at a first angle relative to the substrate normal; and The steam plume (140-3) emitted by the third nozzle array (130-3) has a third main evaporation direction inclined at a third angle relative to the normal of the substrate, wherein the absolute value of the first angle is greater than the absolute value of the third angle.

16. The method of claim 14 or 15, wherein the first material is a first metal, particularly Mg, and the second material is a second metal, particularly Ag.

17. The method of any one of claims 14 to 16, wherein the first hybrid sublayer constitutes the lower portion of the cathode layer of the OLED layer stack, and the second hybrid sublayer constitutes the upper portion of the cathode layer of the OLED layer stack.

18. The method of any one of claims 14 to 17, wherein the substrate includes overhangs (190-L, 190-R) facing different directions, and the first material and the second material are at least partially guided behind the overhangs.

19. The method of any one of claims 14 to 18, wherein the first steam distribution tube (120-1) is passively heated by the heat from the one or two second steam distribution tubes, wherein the first material is magnesium and the second material is silver, and more particularly wherein the first mixed sublayer and the second mixed sublayer comprise a silver-to-magnesium mixing ratio ranging from one part silver to one part magnesium to ten parts silver to one part magnesium.

20. An OLED display device, the OLED display device comprising: The substrate has multiple pixels, each of which includes a cathode layer. in The cathode layer includes a first hybrid sublayer and a second hybrid sublayer on top of the first hybrid sublayer, the first hybrid sublayer including a first material and a second material, the second hybrid sublayer including the first material and the second material, and the cathode layer is manufactured according to the method of any one of claims 14 to 19.

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