Spray head or shower-base edge ring for film edge thickness adjustment

Abstract

A gas distribution system is presented that can provide tunability of enhanced gas flow at a surface of a wafer. The gas distribution system can include a first flow conductance modulation surface having a radial cross-sectional profile extending between a first position and a second position on the gas distribution system, the second position being offset from the first position by a first distance in a direction perpendicular to and toward a wafer support plane.

Description

[0001] By incorporating references The PCT application form is filed together with this specification as part of this application. Each application listed in the concurrently filed PCT application form that claims a benefit or priority under this application is incorporated herein by reference in its entirety for all purposes. Background Technology

[0002] Semiconductor manufacturing processes typically occur indoors, where one or more semiconductor wafers are supported on one or more wafer supports during wafer handling operations. Such semiconductor wafers can be positioned facing (e.g., below or above) a corresponding process gas distribution system, such as a nozzle or spray-base, which can be used to distribute process gases on the side of the semiconductor wafer facing the nozzle or spray-base (i.e., the side of the wafer to be processed).

[0003] For example, in a front deposition system, the wafer is positioned on a base below the nozzle, with the side of the wafer to be processed facing upwards. In a back deposition system, with the side of the wafer to be processed facing downwards from the spray-base, the wafer is lifted away from the spray-base by a wafer support structure. The spray-base is a combination of the base and the nozzle, and is guided to deliver one or more process gases in an upward direction (rather than the downward direction along which the nozzle is positioned to deliver process gases).

[0004] The gas distribution system disclosed herein provides adjustable gas flow rate on the surface of a wafer for use in such a processing chamber. Summary of the Invention

[0005] Details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the description, drawings, and claims.

[0006] In some implementations, an apparatus may be provided comprising: a wafer support defining a wafer support plane and configured to support a semiconductor wafer having a diameter of 300 mm, such that when the semiconductor wafer is supported by the wafer support, the lower side of the semiconductor wafer coincides with the wafer support plane. The apparatus further comprises: a nozzle having one or more sets of gas distribution ports distributed over a first region on a first side of the nozzle, the first side facing the wafer support plane when the nozzle is placed in a first configuration. The device further includes: a first flow control surface having a radial cross-sectional profile extending between a first position and a second position on the nozzle, the second position being offset by a first distance relative to the first position in a direction perpendicular to and toward the wafer support plane, wherein the first position, the second position, and the first flow control surface are all within an annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the first distance is between 10% and 20% of a second distance, the second distance representing a gap through which process gas flows out from the processing area at the first position, and the second distance being measured in the direction perpendicular to and toward the wafer support plane.

[0007] In some further implementations, the second position can be farther from the central axis of the nozzle than the first position.

[0008] In some further implementations, the distances from the first position and the second position to the central axis of the nozzle may be equal.

[0009] In some further implementations, the first position and the second position can be connected via the first flow guide control surface.

[0010] In some further implementations, the cross-sectional profile of the first flow-guiding control surface may be nonlinear.

[0011] In some further implementations, the cross-sectional profile of the first flow-guiding control surface may have at least one curved portion.

[0012] In some further implementations, the cross-sectional profile of the first flow-guiding control surface may have: a first bend that is adjacent to the first region and tangent to the nozzle at the first position; and a second bend that is tangent to a surface parallel to the wafer support plane at the second position.

[0013] In some further implementations, the cross-sectional profile of the first flow-guiding control surface may have a wall perpendicular to the first region.

[0014] In some further implementations, the cross-sectional profile of the first flow-guiding control surface has a wall that is inclined at 30 degrees toward the first region.

[0015] In some further implementations, the first flow control surface can be provided by a flow control component separate from the nozzle.

[0016] In some further implementations, the first flow-guiding control surface can be provided by an annular element extending around the entire first region.

[0017] In some further implementations, the first flow-guiding control surface can be provided by a ring segment that extends only partially around the first region.

[0018] In some further implementations, the device may further include a second flow-guiding control surface extending between a third and a fourth position on the nozzle, the fourth position being offset by a third distance relative to the third position in a direction perpendicular to and toward the wafer support plane, wherein the third position, the fourth position, and the second flow-guiding control surface are all within the annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the third distance is between 10% and 20% of the fourth distance, the fourth distance being the distance between the third position of the nozzle and the wafer support plane in the direction perpendicular to and toward the wafer support plane.

[0019] In some further implementations, the third distance may be different from the first distance.

[0020] In some further implementations, the first region may be non-planar and protrude toward the wafer support plane, and the first flow control surface may be connected to the nozzle at the first location.

[0021] In some further implementations, the apparatus may also include a controller configured to position one or both of the nozzle and the wafer support in the first configuration during at least a portion of a semiconductor processing operation, wherein one or more first process gases flow out from at least one set of gas distribution ports, wherein, in the first configuration, the second distance may be between 6 mm and 16 mm.

[0022] In some further implementations, the device may also include: a processing chamber; and a base, wherein: the first region of the nozzle can be positioned within the processing chamber, and the base can be positioned below the nozzle and provide the wafer support.

[0023] In some further implementations, the apparatus may further include a processing chamber and a base, wherein the first region of the nozzle can be positioned within the processing chamber, and the base can be positioned below the nozzle, and the base provides the wafer support.

[0024] In some further implementations, an apparatus may include: a wafer support defining a wafer support plane and configured to support a semiconductor wafer having a diameter of 300 mm, such that when the semiconductor wafer is supported by the wafer support, the lower side of the semiconductor wafer coincides with the wafer support plane. The apparatus may also include: a nozzle base having one or more sets of gas distribution ports distributed over a first region on a first side of the nozzle base, the first side facing the wafer support plane when the nozzle base is placed with respect to the wafer support plane in a first configuration. The device may further include: a first flow control surface extending between a first position and a second position on the nozzle base, the second position being offset by a first distance relative to the first position in a direction perpendicular to and toward the wafer support plane, wherein the first position, the second position, and the first flow control surface are all within an annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the first distance is between 10% and 20% of the second distance, the second distance representing a gap through which process gas flows out from the processing area at the first position, and the second distance being measured in the direction perpendicular to and toward the wafer support plane. Attached Figure Description

[0025] In the following discussion, reference is made to the following figures; the figures are not intended to limit the scope, but are provided only to assist in the following discussion.

[0026] Figure 1A and 1B Schematic diagrams depicting exemplary semiconductor processing tools with different configurations according to certain implementation schemes, in which the gas distribution system disclosed herein can be used.

[0027] Figure 2 A schematic diagram depicting the first surface of a gas distribution system facing the exposed side of a semiconductor wafer to be processed, according to certain implementation schemes.

[0028] Figures 3A to 3HSchematic diagrams depicting different cross-sectional profile configurations of the flow conduction control surface according to certain implementation schemes, wherein the flow conduction control surface is configured to regulate the process gas distributed by the gas distribution system.

[0029] Figure 4A and 4B An exemplary distribution of the flow-guiding surface relative to the first surface of a gas distribution system facing the exposed side of the semiconductor wafer to be processed is depicted according to certain implementation schemes.

[0030] Figure 5A Simulation results illustrating the effects of a gas distribution system are presented based on certain implementation schemes.

[0031] Figure 5B Exemplary data illustrating the effects of a gas distribution system are presented based on certain implementation schemes.

[0032] Figure 6 A schematic diagram of an exemplary processing system that can be used to perform the methods described herein is shown according to certain implementation schemes.

[0033] The accompanying drawings are provided to help understand the concepts discussed in this disclosure and are intended to illustrate some embodiments that fall within the scope of this disclosure, but are not intended to be limiting; embodiments consistent with this disclosure but not depicted in the drawings are still considered to fall within the scope of this disclosure.

[0034] According to certain exemplary implementations, similar reference numerals in the various figures indicate the same elements. For example, element 110 in different implementations may be designated as 110A, 110B, 110C, or 110-1, 110-2, 110-3, etc. When only the first digit is used to refer to such an element, it should be understood that any instance of that element (e.g., element 110 in the previous example would refer to element 110A, 110B, 110C, or 110-1, 110-2, 110-3) is acceptable. Detailed Implementation

[0035] As described above, semiconductor wafer processing operations are typically performed on a semiconductor wafer, which is supported within a processing chamber on a pedestal or wafer support (e.g., a structure typically designed to support the semiconductor wafer). Process gases are typically distributed across the entire semiconductor wafer by passing through ports located on the side of the gas distribution system facing the semiconductor wafer to be processed (e.g., the first side of the gas distribution system, such as the underside of a nozzle in a front deposition system or the upper side of a spray-base in a back deposition system).

[0036] In chemical vapor deposition (CVD) processes, non-uniformity in edge thickness can occur on semiconductor wafers, particularly near the wafer periphery. This non-uniformity can be at least partially attributed to the flow of process gases, which can cause a decrease in film deposition rate towards the wafer edge due to increased diffusion rate of the process gases towards the wafer edge. For example, gas distribution systems in existing CVD tools often produce films with a significantly reduced visible thickness near the wafer edge, rather than maintaining a uniform thickness until the edge. Such non-uniformity can adversely affect semiconductor wafer production yield (e.g., a 1 cm region on the outer edge of the wafer (representing 13% of the total area on one side of the wafer) may show a reduced deposition thickness, potentially rendering patterning in this region unusable, thereby potentially reducing wafer yield by a certain amount, such as 13% or more).

[0037] This document discloses a gas distribution system that provides adjustable gas flow across a wafer surface and is configured to increase film deposition rates at wafer edges in CVD processing tools and other contexts. The gas distribution system design may include a flow-regulating surface offset by a predetermined amount from a predetermined region on a first surface of the gas distribution system. The flow-regulating surface may be positioned near the first surface of the gas distribution system, and when a wafer is present, the flow-regulating surface may be positioned at a distance from the wafer edge within ±8%, ±5%, or, in some implementations, ±3.5% of the wafer radius. It has been found that the effect of process gas flow regulation on wafer edge uniformity may decrease with increasing distance between the flow-regulating surface and the wafer edge. Positioning the flow-regulating surface within ±3.5% of the wafer radius from the wafer edge provides a significant benefit in edge uniformity regulation, but effects may also be present, albeit to a lesser extent, within ±5% or ±8% of the wafer radius. The flow control surface has a height between 10% and 20% of the gap distance between the first surface of the gas distribution system and the wafer surface facing the flow control surface (the gap distance may be defined slightly differently in back-side deposition systems using a carrier ring, as discussed below). It has been found that a flow control surface with such dimensional and positional characteristics is beneficial in allowing adjustment or control of edge uniformity during wafer processing operations, thereby enabling tool operators to compensate for edge non-uniformities that may be caused by process irregularities, chamber irregularities, etc. The flow control surface can be used to regulate process gas distribution, effectively "pushing" the gas flow further towards the wafer edge, thereby increasing the density of such gas near the wafer edge and increasing the deposition thickness at the semiconductor wafer edge.

[0038] Furthermore, in plasma-enhanced chemical vapor deposition (PECVD) processes, radio frequency (RF) power can be applied to one or more process gases to generate plasma for depositing layers onto the wafer. It has been found that the flow-direction-controlled surface configuration disclosed herein allows for the adjustment of process gas distribution in a desired manner with minimal impact on plasma formation / generation.

[0039] Figure 1A and 1B Schematic diagrams of exemplary semiconductor processing tools with different configurations, based on certain implementation schemes, are depicted in which the gas distribution system disclosed herein can be used. For example, Figure 1A A schematic diagram depicts an exemplary semiconductor processing tool 100 with a frontal configuration, configured to process the "front" side of a wafer, typically considered as the surface facing upwards during processing and having an active device layer. The semiconductor processing tool 100 may include a semiconductor processing chamber 105, comprising an internal volume accommodating one or more semiconductor processing stations 115 for frontal processing. Each semiconductor processing station 115 may include a wafer support, such as a base 120, for supporting a wafer 130 (e.g., a semiconductor wafer to be processed).

[0040] In some implementations, when a wafer 130 with a diameter of 300 mm is supported by a base 120, the wafer 130 may have a front side 130A facing the nozzle assembly 140 and a back side 130B coinciding with the wafer support plane 120-1 defined by the base 120. The wafer 130 may be processed within a semiconductor processing chamber 105 below a gas distribution system such as the nozzle assembly 140. In some implementations, the nozzle assembly 140 may be configured to distribute gas from a first surface 141-1 facing the front side 130A of the wafer 130 through a plurality of gas distribution ports 108 (discussed in more detail below) onto a surface of the wafer 130, such as the front side 130A.

[0041] In some implementations, the semiconductor processing chamber 105 may also include one or more loading ports (not shown), and each loading port may be configured to allow the wafer 130 to be inserted into or removed from the semiconductor processing chamber 105. The loading ports may be located within the wall of the semiconductor processing chamber 105.

[0042] As another example, the semiconductor processing chamber 105 may include one or more processing stations 116 for back-side processing, rather than one or more semiconductor processing stations 115 for front-side processing. For example, Figure 1BA schematic diagram depicts an exemplary processing station 116 with a back-side configuration, the back side of which has a spray-base 121 configured to deliver process gases to the “back” side of a wafer 130, typically considered as the wafer-face-down surface during processing. Each semiconductor processing station 116 may include a nozzle assembly 140 and a spray-base 121, as well as one or more wafer support structures 138 for supporting the wafer 130. The one or more wafer support structures 138 may be integrated with the spray-base 121 or may be separate components that can be replaced and / or detached from other components of the chamber 105 (e.g., the spray-base 121). The spray-base 121 can be configured to dispense one or more process gases to perform deposition on the back (or underside) of the wafer 130, while the nozzle assembly 140 can be configured to dispense gases that do not react with the one or more process gases on the top or front side of the wafer, thereby helping to prevent the one or more process gases from migrating to the top side of the wafer and causing deposition to occur only on the underside of the wafer. The wafer 130 can be processed within the semiconductor processing chamber 105 when positioned above the spray-base 121.

[0043] In some embodiments, the semiconductor processing station 116 may include a plurality of wafer support structures 138 that can be positioned around a first surface 141-2 of the spray-base 121 to support wafers 130. For back-side processing configurations, wafers are typically supported from the back side to keep the front side of the wafer, on which active layers and device patterns are typically formed, intact.

[0044] As used herein, a wafer support structure refers to a structure configured to have a wafer placed thereon and to support such a wafer at an elevated position relative to the spray-base, i.e., such that a gap exists between the lower side of wafer 130 (which may be the side of the wafer to be processed) and the top of the spray-base (e.g., the first surface 141-2 of the spray-base 121 facing the side of the wafer to be processed). The wafer support structure may be a fixed structure, such as a static, tower-like structure projecting from the top surface of the spray-base; or a static, tower-like structure extending downward from a nozzle positioned above the spray-base; or a static cantilever structure extending radially inward from the wall of the semiconductor processing chamber; or a dynamic structure, such as a similar structure connected to an actuator to allow such a structure to move between different positions, wherein at least one position corresponds to a position where the wafer can be supported by such a structure, such that a gap exists between the lower side of the wafer and the top side of the spray-base.

[0045] The wafer support structure 138 defines a wafer support plane 120-1. The wafer support plane 120-1 is defined by the portion of the wafer support structure 138 that contacts the lower side of the wafer 130, such that when the wafer 130 is supported by the wafer support member 138, the position of the lower side 130B of the wafer 130 contacting the wafer support plane 120-1 coincides with the wafer support plane 120-1.

[0046] In some implementations, the wafer support structure 138 may include a carrier ring or may be used with the carrier ring to support the wafer 130 above the spray-base 121 to form a gap between the underside of the wafer 130, such as a back surface 130B, and the first surface 141-2 of the spray-base 121. The carrier ring contacts the underside of the wafer 130 during positioning, for example, along an annular region extending radially inward from the wafer edge where the wafer edge rests on the annular region of the corresponding carrier ring, or at multiple smaller regions located on tabs extending radially inward from the inner circumference of the carrier ring. In either case, the surface on which the wafer 130 rests makes planar contact with the underside of the wafer 130. As will be disclosed in detail below, in systems including carrier rings, the process flow gap (e.g., a second distance) may be defined as the distance between the first surface 141-2 of the spray-base 121 and the underside of the region on which the carrier ring rests (e.g., ...). Figure 3A The distance 305' is described in more detail below.

[0047] like Figure 1A and Figure 1B As shown, a gas distribution system (e.g., a nozzle assembly 140 or a spray-base 121 configured to distribute process gases) houses an inflation chamber 110 and a plurality of gas distribution ports 108 extending from a first surface 141 of the gas distribution system (e.g., the first surface 141-1 of the nozzle assembly 140 or the first surface 141-2 of the spray-base 121) to the inflation chamber 110. The gas distribution ports 108 provide fluid communication between the inflation chamber 110 and a processing region located between the first surface 141 and the surfaces of the wafer 130 (if present) facing the respective first surfaces.

[0048] As used herein, the term gas distribution port refers to a small port, orifice, aperture, or opening in a spray-base or nozzle, depending on the context, through which gas may exit the spray-base or nozzle after being supplied with gas via one or more gas inlets. Numerous gas distribution ports, such as tens, hundreds, or in some cases thousands, may be distributed on the wafer-facing surface of the spray-base or nozzle (e.g., first surface 141, such as first surface 141-1 of nozzle assembly 140 or first surface 141-2 of spray-base 121) to deliver process gases to the wafer in a desired manner. During semiconductor processing operations, one or more process gases may be provided to the first filling chamber 110 via gas inlet 112, which is in fluid communication with one or more process and / or non-reactive gases. In some implementations, the spray-base or nozzle can be a multi-chamber system, with different gases delivered to the internal chambers through different sets of ports within the spray-base or nozzle.

[0049] In some implementations, the base 120, nozzle assembly 140, and / or spray-base 121 can be positioned in different configurations for different processing operations, for example, processing areas of different sizes. These different sizes of processing areas are defined by the gap between the side of the wafer 130 to be processed and the first surface 141 of the gas distribution system (e.g., nozzle assembly 140 or spray-base 121). The relative positioning of the base 120, nozzle assembly 140, and / or spray-base 121 according to the configurations disclosed herein can be caused / controlled by a controller (discussed in detail below).

[0050] Figure 2 A schematic diagram depicting the first surface 141 of a gas distribution system 200 facing the exposed side of a semiconductor wafer to be processed, according to certain implementation schemes. The gas distribution system 200 may correspond to... Figure 1A and 1B The nozzle assembly 140 or spray base 121. The first surface 141 of the gas distribution system 200 may correspond to... Figure 1A and 1B The first surface 141-1 of the nozzle assembly 140 or the first surface 141-2 of the spray-base 121. For example... Figure 2 As shown, the first region 204 defines the area within which the gas distribution port 108 is distributed. The annular region 210, defined by the inner circle 210-1 and the outer circle 210-2, represents the area within which a flow control surface can be placed. The annular region 210 may share the same central axis as the first region 204.

[0051] As mentioned above, a large number of gas distribution ports 108, for example, tens, hundreds, or in some cases thousands, may be distributed throughout the first region 204 on the first surface 141 to facilitate the delivery of process gases to the wafer (not shown) in the desired manner during processing operations. Although in Figure 2 The diagram shows a gas distribution port 108 with uniformly set size and distribution as an example, but the size and / or distribution of the gas distribution port 108 may be non-uniform on the first surface 141 of the gas distribution system 200 and designed to be optimized for the target operation. Although the exemplary implementation shows the first region 204 having a diameter of approximately 300 mm for processing 300 mm wafers, the implementation is not limited to this. The first region 204 may have various other suitable diameters to ensure that the gas flow rate over the wafer is uniform (or substantially uniform).

[0052] To increase the thickness deposited along the edge of a semiconductor wafer, the gas distribution system 200 may include a flow-regulating surface that adjusts the distribution of process gases near the wafer edge. For example, the flow-regulating surface may "push" the process gas flow towards the semiconductor wafer edge, thereby increasing the local density of the process gases near the wafer edge (and thus increasing the deposition rate). The flow-regulating surface may be positioned within an annular region 210 centered on a first region 204. For a system processing a 300mm wafer, the annular region 210 may, for example, have an inner diameter of 290mm and an outer diameter of 310mm (e.g., approximately ±3.5% of the wafer radius for a 300mm wafer). That is, in some implementations, when viewed along an axis orthogonal to the wafer support plane (e.g., along the z-axis of wafer support plane 120-1), the flow-regulating surface (e.g., both the first and second locations) may overlap with a wafer support (e.g., a base 120 in a front-side deposition system).

[0053] Figures 3A to 3H Schematic diagrams depicting different cross-sectional profile configurations of the flow conduction control surface according to certain implementation schemes, wherein the flow conduction control surface is configured to regulate the process gas distributed by the gas distribution system.

[0054] For example, such as Figure 3A As shown, the flow control surface may have a profile extending on or adjacent to the first surface 141 between a first position 301 and a second position 302, the second position 302 being along... Figure 2 and Figure 3AThe z-axis is offset by a first distance 306 (e.g., height) relative to the first position 301 in a direction perpendicular to and toward the wafer 130. The first position 301 and the second position 302 are located within the annular region 210 as the flow control surface is positioned. As will be discussed in detail below, the first flow control surface 300 may have a different cross-sectional profile configuration, and the first distance 306 may be between 10% and 20% of the process gas flow gap, which is located between the side of the wafer to be processed (e.g., the side facing the first surface 141) and the first surface 141. This process gas flow gap is approximately equal to the distance at which the first position of the first surface 141 is offset along the direction of the gas distribution system 200 during the processing operation. Figure 2 The z-axis is perpendicular to and oriented towards the wafer support plane 120-1 (about...). Figure 1A and 1B The distance between (the items under discussion).

[0055] In some implementations, as mentioned above, if a carrier ring is used to support the wafer 130, the gap or second distance 305' can alternatively be measured as the distance between the first surface 141 and the underside of the carrier ring. For example, if Figure 3A The wafer support structure shown includes a carrier ring 324 that contacts the underside of the wafer 130 during positioning, for example, along an annular region extending radially inward from the wafer edge where the wafer edge rests, or at multiple smaller regions located on tabs extending radially inward from the inner circumference of the carrier ring 324, the corresponding annular regions being, for example, notches 358 of the carrier ring 324. In either case, the surface of the wafer 130 resting thereon makes planar contact with the underside of, for example, the back side 130B of the wafer 130. In systems including the carrier ring 324, the gap for process airflow (e.g., a second distance) can be defined as the distance (e.g., second distance 305') between the first surface 141-2 of the spray-base 121 and the underside (e.g., the underside 324B) of the region where the carrier ring rests on the wafer 130. In a back-side deposition system where the carrier ring 324 is not used, the wafer 130 may alternatively rest directly on a support extending upward from the spray-base, and a second distance 305' may be evaluated between the underside of the wafer 130 and the first surface 141-2.

[0056] like Figure 3A As shown, in some implementations, the first flow control surface 300 may have a wall-like cross-sectional profile perpendicular to the first region 204. In this configuration, the first position 301 and the second position 302 may have the same radial distance as the central axis 303 of the gas distribution system 200.

[0057] Additionally or alternatively, according to Figures 3B to 3EIn the configuration shown, the second position 302 may be further away from or closer to (not shown) the central axis 303 of the gas distribution system than the first position 301. Additionally or alternatively, depending on... Figures 3C to 3E In the configuration shown, the first flow-guided control surface 300 may have a nonlinear cross-sectional profile.

[0058] Specifically, such as Figure 3B As shown, the cross-sectional profile of the first flow control surface 300B may have the characteristics of a wall with a slope toward the first region 204, such as 30 degrees, 45 degrees, 60 degrees, etc. For example, the included angle 309 between the first flow control surface 300B and the first surface 141 may be approximately 30 degrees.

[0059] like Figure 3C As shown, the cross-sectional profile of the first flow control surface 300C may have the characteristics of a convex bend, such as a portion that bends away from the central axis 303 and has a slope relative to the first surface 141 that decreases as the distance from the first surface 141 increases.

[0060] like Figure 3D As shown, the cross-sectional profile of the first flow control surface 300D may have the feature of a concave bend, such as a portion that bends toward the central axis 303 and has a slope relative to the first surface 141 that increases with the distance from the first surface 141.

[0061] like Figure 3E As shown, the cross-sectional profile of the first flow control surface 300E may feature a curved portion with a concave surface and a convex surface, the concave surface being recessed towards the central axis adjacent to the first surface 141, while the convex surface is protruding towards the central axis above the concave surface. For example, the curved portion may have a first curved portion adjacent to the first region 204 and tangent to the first surface 141 at a first position 301E, and a second curved portion tangent to a surface 320E parallel to the wafer support plane (not shown) at a second position 302E.

[0062] It should be understood that, in any of the configurations disclosed herein, the transition area between the first position 301 and the second position 302 may be arc-shaped.

[0063] It should be noted that, although Figures 3A to 3E The diagram shows a connection between the first position 301 and the second position 302 via a first flow control surface 300 (where the first flow control surface 300 contacts the first surface 141 at the first position 301), but instances may exist where the first flow control surface 300 and the first surface 141 are separated. For example, a gap may exist between the first flow control surface 300 and the first surface 141. For example, as... Figure 3FAs shown, the first flow control surface 300F can be separated from the first surface 141 by the gap 310. For example, the first position 301F is close to but not located on the first surface 141. For ease of explanation, the implementation scheme of separating the first flow control surface 300F from the first surface 141 will not be discussed in detail.

[0064] Generally, the flow control surfaces discussed herein can be provided by structural features as an integral element of a nozzle or spray-base used therewith, or by structural features located on a separate component of the nozzle or spray-base used therewith. For example, the flow control surface can be part of a ring or annular segment mounted to or adjacent to a nozzle or spray-base used with the flow control surface. Additionally or alternatively, the flow control surface can also have a non-annular shape, which generates varying flow resistance to control corresponding asymmetries in wafer deposition thickness uniformity.

[0065] In some implementation schemes, such as Figure 3G As shown, the gas distribution system (e.g., spray-base 121) may have a non-planar first surface 141-2, for example, wherein the first region 204 may be non-planar and protrude toward a wafer support plane 120-1 that coincides with the side surface of the wafer 130 to be processed when the wafer 130 is present (e.g., the first surface 141 is not parallel to the wafer support plane 120-1). As mentioned above, the first flow control surface 300 may or may not contact the first surface 141 at the first position 301 (e.g., may have or may not have such...). Figure 3F (The gap 310 shown). Similar to what was previously discussed, in this configuration, the first distance 306 may be between 10% and 20% of, for example, the distance of the second distance 305, which is the distance from the first position 301 to the side of the wafer 130 to be processed (e.g., the side facing the first surface 141-2) in a direction perpendicular to and toward the wafer support plane 120-1. And as mentioned above, in the case where a carrier ring is used, the second distance 305' may alternatively be measured as the distance between the first position 301 and the lower side of the carrier ring.

[0066] It should be understood that, despite Figures 3A to 3G The examples in the document show backside deposition systems, but the concepts / implementations discussed herein can be similarly applied to frontside deposition systems and / or systems that perform both frontside and backside deposition. For example, as... Figure 3HAs shown, the first position 301, the second position 302, and the first flow control surface 300 may all be located within the annular region 210 centered on the first region 204. The first flow control surface 300 may extend between the first position 301 and the second position 302. The second position 302 may be offset from the first position 301 by a first distance 306 along the z-axis in a direction perpendicular to and toward the wafer 130. For example, the first distance 306, such as the height of the first flow control surface 300, may be between 10% and 20% of the gap between the side of the wafer to be processed (e.g., the side facing the first surface 141; coinciding with the wafer support plane 120-1) and the first surface 141, which may be, for example, a second distance 305.

[0067] To achieve various gas flow rate regulation effects, such as uniformly adjusting the wafer edge thickness around the entire wafer, uniformly adjusting it at selected wafer locations, or adjusting it by different amounts at different wafer locations, the gas distribution system 200 may include flow control surfaces with different configurations. For example, such as Figure 4A As shown, the first flow control surface 300 can be provided as part of a ring 410 surrounding the entire first region 204. In other words, the first flow control surface 300 can form a complete circle, such as a ring 410 centered on the first region 204, which is designed to uniformly adjust or correct the wafer edge thickness around the entire wafer.

[0068] In some implementation schemes, such as Figure 4BAs shown, a first flow control surface 300 can be provided via a portion of a ring extending around the entire first region 204 (e.g., ring segment 420-1), and the gas distribution system 200 may have more than one flow control surface. For example, the gas distribution system 200 may have second and third flow control surfaces, provided via ring segments 420-2 and 420-3, respectively. In some embodiments, the second and / or third flow control surfaces may have the same cross-sectional profile configuration as the first flow control surface 300, or the second and / or third flow control surfaces may have any of the cross-sectional profile configurations discussed herein. In other words, the flow control surfaces provided via ring segments 420-1, 420-2, and 420-3 may be configured as needed to correct the wafer edge thickness at selected locations on the wafer to make it uniform, thereby addressing different degrees of non-uniformity at these different locations along the wafer edge. For a specific example, the presence of a transfer device (e.g., a loading port configured to allow wafer insertion or removal from a semiconductor processing chamber) may affect the process gases, causing different gas densities near the wafer edge in the sector corresponding to ring 420-3 facing the transfer device, the sectors adjacent to the transfer device corresponding to rings 420-1 and 420-2, and the sector corresponding to the transfer device. Therefore, to enhance wafer edge uniformity, the third flow control surface may have a different height, cross-sectional profile configuration, and / or corresponding central angle compared to the first flow control surface 300 and / or the second flow control surface provided by ring 420-2. In some embodiments, although not shown, the rings providing the first, second, and third flow control surfaces may not belong to the same ring. That is, the first, second, and third flow control surfaces may be positioned at different distances from the central axis of the first region 204.

[0069] Additionally or alternatively, more than one flow control surface may be offset relative to the first region 204 by different amounts measured along the z-axis, thus having, for example, different heights; may extend between a third and a fourth position, wherein the fourth position is offset relative to the third position by a distance different from the first distance; and may be configured to adjust the wafer edge thickness in different ways at selected locations on the wafer. For example, the wafer may have a first degree of reduction in film thickness at the wafer edge in a first sector corresponding to ring segment 420-1, and a second degree of reduction in film thickness at the wafer edge in a second sector corresponding to ring segment 420-2, wherein the second degree of reduction is greater than the first degree of reduction. For such a wafer, the height of the first flow control surface in the first sector may be lower than the height of the second flow control surface in the second sector. Therefore, near the wafer edge, the higher second flow control surface may cause more deposition than the first flow control surface, thereby making the two sectors at the wafer edge consistent in terms of deposition thickness.

[0070] Figure 5A Simulation results illustrating the effect of the gas distribution system are presented based on certain implementation schemes. Arrow surfaces represent cross-sectional views of the back-side deposition system, where the x-axis represents length and the y-axis represents height. Absolute values ​​for the y-axis are omitted. Figure 501 depicts a first flow-guiding surface 300 with a wall-like structure (e.g., Figure 3A The simulation results show the gas flow regulation of the gas distribution system (with the first flow control surface configuration shown in the figure). As depicted in Table 501, the gas flux at the circled portion 502 is enhanced due to the first flow control surface 300. As indicated by the arrows representing the gas flux at portion 502, the first flow control surface 300 "pushes" the process gas toward the edge of wafer 130. These arrows now point to the edge of the wafer, instead of pointing outside the processing area as would occur without the first flow control surface 300. Therefore, using the first flow control surface 300 results in a larger amount of process gas reaching the edge of wafer 130.

[0071] Figure 5B Exemplary data illustrating the effects of gas distribution systems in certain implementations are presented. Figure 503 compares normalized thicknesses after deposition at multiple locations on a 300mm wafer, highlighting the impact of process gas conditioning using flow-controlling surfaces, as discussed herein. Line 504 shows data from a system without the flow-controlling surfaces discussed herein, line 505 shows data from the same system and process conditions but with a flow-controlling surface having a height of 5mm (e.g., offset by 5mm from a predetermined area on the first surface of the gas distribution system), and line 506 shows data from the same system and process conditions but with a height of 8mm (e.g., offset by 8mm from a predetermined area on the first surface of the gas distribution system) [Note: If so, additional notes are provided for 505 and 506, using the same surface profile / shape except for the height]. As seen in Figure 503, all lines show a stable normalized thickness of approximately 1.00 between 135mm and 140mm from the wafer center (and between the wafer center and 135mm, although not shown). However, beyond this point, the lines diverge: line 504 shows a significant decrease in thickness, dropping below 0.9 near the 147mm mark, indicating a significantly reduced edge thickness when process gas conditioning is not applied via the flow-regulating surface. In contrast, lines 505 and 506 with flow-regulating surfaces maintain a more uniform thickness (e.g., for a system with a 5mm high flow-regulating surface, the wafer thickness at 147mm is still approximately 1, and for a system with an 8mm high flow-regulating surface, the wafer thickness at 147mm is slightly greater than 1), indicating that the process gas conditioning disclosed herein helps to enhance or maintain the edge thickness at the wafer periphery.

[0072] It should be noted that although the above examples focus on deposition, similar uniformity benefits can be obtained in other semiconductor processing operations, such as etching operations, and the concepts discussed herein can also be implemented in etching tools. It should be understood that, to achieve the airflow regulation objectives disclosed herein, any suitable material can be used to fabricate the flow-regulating surface, or to provide a structure for such a surface, such as aluminum or aluminum alloys, ceramics such as aluminum nitride (AlN) or alumina (Al2O3), yttrium-based materials such as Y2O3, or SiC-based materials.

[0073] It should be noted that the first and / or second distances are specific to a particular processing configuration, and these distances may vary during wafer loading / unloading operations. It should be understood that the controllers discussed herein can be configured to move the pedestal, nozzle, and / or spray-pedestal to a specific configuration during processing. The first and / or second distances can be defined relative to such configuration.

[0074] Figure 6 This is a schematic diagram of a processing system suitable for performing deposition processes (e.g., front or back deposition processes) according to an embodiment. System 600 includes a transfer module 603. Transfer module 603 provides a clean, pressurized environment to minimize the risk of contamination of the substrate being processed as it moves between various reactor modules. Mounted on transfer module 603 is a multi-station reactor 609 capable of performing ALD, processing, and CVD according to various embodiments. Multi-station reactor 609 may include multiple stations 611, 613, 615, and 617, which may operate sequentially according to the disclosed embodiments. A station may include a heating base or substrate support, one or more gas inlets or nozzles or distribution plates.

[0075] The transfer module 603 may also be equipped with one or more single-station or multi-station modules 607 capable of performing plasma or chemical (non-plasma) pre-cleaning, other deposition operations, or etching operations. This module can also be used for various processes, such as preparing substrates for deposition processes. The system 600 also includes one or more wafer source modules 601, where wafers are stored before and after processing. An atmospheric robot (not shown) in an atmospheric transfer chamber 619 can initially move wafers from the source modules 601 to the loading lock 621. A wafer transfer device (typically a robotic arm unit) in the transfer module 603 moves wafers from the loading lock 621 to modules mounted on the transfer module 603 and moves wafers between these modules.

[0076] In various implementations, a system controller 642 is used to control the process conditions during the deposition process. The system controller 642 will typically include one or more memory devices and one or more processors. The processor may include a CPU or computer, analog and / or digital input / output connections, a stepper motor controller board, etc.

[0077] The system controller 642 controls all activities of the deposition apparatus. The system controller 642 runs system control software, which includes a set of instructions for controlling timing, gas mixing, chamber pressure, chamber temperature, wafer temperature, radio frequency (RF) power levels, wafer chuck or pedestal position, and other parameters specific to the process. In some embodiments, additional computer programs stored on memory devices associated with the system controller 642 may be used.

[0078] The described implementation includes a user interface associated with controller 642. The user interface may include a display screen, a graphical software display of the device and / or process conditions, and user input devices such as pointing devices, keyboards, touchscreens, microphones, etc.

[0079] The system control logic can be configured in any suitable manner. Generally, this logic can be designed or configured in hardware and / or software. Instructions for controlling the drive circuitry can be hard-coded or provided as software. These instructions can be provided through "programming." Such programming is understood to include any form of logic, including hard-coded logic in digital signal processors, application-specific integrated circuits (ASICs), and other devices with specific algorithms implemented in hardware. Programming is also understood to include software or firmware instructions executable on a general-purpose processor. The system control software can be encoded in any suitable computer-readable programming language.

[0080] Computer program code used to control processes in a process sequence can be written in any conventional computer-readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. The compiled object code or script is executed by a processor to perform the tasks identified in the program. Also, as indicated, the program code can be hard-coded.

[0081] The controller parameters relate to process conditions such as, for example, process gas composition and flow rate, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe and can be entered using a user interface.

[0082] Signals used for monitoring the process can be provided via analog and / or digital input connections to the system controller 642. Signals used for controlling the process are output via analog and digital output connections to the device 600.

[0083] The system software can be designed or configured in different ways. For example, multiple chamber assembly subroutines or control targets can be written to control the operation of the chamber assembly required to perform the deposition process according to the disclosed embodiments. Examples of programs or program segments used for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.

[0084] In some embodiments, system controller 642 is part of a system that may be part of the embodiments described above. Such systems include semiconductor processing apparatuses that include one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control their operation before, during, or after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller” that controls various components or sub-sections of one or more systems. Depending on the processing requirements and / or the type of system, system controller 642 may be programmed to control any of the processes disclosed in this invention, including controlling the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer loading / unloading tools and other transfer tools, and / or the transfer of loading locks connected to or interfaced with a particular system.

[0085] System Controller Semiconductor processing tools having a gas distribution system, as discussed above, that provides enhanced airflow adjustability on the wafer surface may also include or be connected to a controller, which may be configured to control a number of functionalities associated with such semiconductor processing tools. Depending on the processing conditions and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, such as processes for controlling the flow rate of coolant (or heating fluid) flowing through the substrate and / or the electrical power flowing through the resistive heater element, as well as other processes or parameters not discussed herein, such as process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools or chambers and other transfer tools and / or loading locks connected to or interfaced with a specific system.

[0086] In a broad sense, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some examples, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0087] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or in whole or in part to a wafer fab (fab) host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool, to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on-site communicating with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control the process on-site.

[0088] Without restriction, the base assembly disclosed herein may be installed in or as part of a semiconductor processing tool, which includes, but is not limited to, a plasma etching chamber or module, a deposition chamber or module, a rotary rinsing chamber or module, a metal plating chamber or module, a cleaning chamber or module, a chamfering edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0089] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

[0090] The use of serial number indicators such as (a), (b), (c)... or (1), (2), (3)... etc. (if any) in this disclosure and claims should be understood not to convey any particular order or sequence, except where such order or sequence is explicitly indicated. For example, if there are three steps marked (i), (ii), and (iii), it should be understood that, unless otherwise stated, these steps may be performed in any order (or even simultaneously, unless otherwise prohibited). For example, if step (ii) involves the processing of an element created in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves the processing of an element created in step (ii), the opposite should be understood. It should also be understood that the use of the serial number indicator “first”, such as “first item”, herein should not be construed as implying or inherently suggesting the necessary existence of a “second” instance, such as “second item”. It should be understood that the phrases “for each of one or more items,” “for each of one or more items,” etc., if used herein, include both single-item groups and multi-item groups; that is, the use of the phrase “for each” means that it is used in programming languages ​​to refer to each item in any group of items referenced. For example, if the group of items referenced is a single item, “each” will refer only to that single item (although the dictionary definition of “each” often limits the term to “each of two or more things”), and does not mean that there must be at least two of these items. Similarly, the terms “set” or “subset” should not be considered by themselves to necessarily cover multiple items—it should be understood that a set or subset may cover only one or more members (unless the context otherwise indicates otherwise).

[0091] Unless otherwise stated, the term “between” as used herein and when used with a range of values ​​should be understood to include both the beginning and end values ​​of the range. For example, “between 1 and 5” should be understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.

[0092] The term "operational connection" should be understood to mean that two components and / or systems are directly or indirectly connected such that, for example, at least one component or system can control the state of the other. For example, a controller can be described as being operationally connected to a resistance heating unit, comprising a controller connected to a sub-controller of the resistance heating unit, which is electrically connected to a relay configured to controllably connect or disconnect the resistance heating unit from a power source capable of providing an amount of power to supply the resistance heating unit to produce a desired level of heating. Due to the current involved, the controller itself may not be able to directly supply such power to the resistance heating unit, but it should be understood that the controller is still operationally connected to the resistance heating unit.

[0093] For the purposes of this disclosure, the term "fluid connection" is used in relation to volumes, chambers, orifices, etc., that can be directly or via one or more intermediate components or volumes to form a fluid connection, similar to how the term "electrical connection" is used in relation to elements connected together to form an electrical connection. However, in the context of the first and second channel segments discussed in this application, it should be understood that when referring to such a channel segment in fluid communication with other channel segments, such fluid communication should be understood as a direct coupling between such channel segments, for example, where the end of such channel segment is directly connected to the end of another channel segment (rather than being connected to such other channel segments via one or more other intermediate channel segments). If used, the term "fluid insertion" can be used to refer to a component, volume, chamber, or orifice in fluid communication with at least two other components, volumes, chambers, or orifices, such that fluid flowing from one of these other components, volumes, chambers, or orifices to the other or one of these components, volumes, chambers, or orifices will first flow through the "fluid-inserted" component before reaching that other or one of these components, volumes, chambers, or orifices. For example, if a pump is fluid-interposed between a reservoir and an outlet, the fluid flowing from the reservoir to the outlet will pass through the pump before reaching the outlet. The term "fluid adjacent" (if used) indicates an arrangement of fluid elements relative to another fluid element such that a possible interruption of fluid flow between the two elements and a possible structure for fluid insertion between them does not exist. For example, in a flow path having a first valve, a second valve, and a third valve arranged in sequence therein, the first valve would be fluid adjacent to the second valve, the second valve would be fluid adjacent to both the first and third valves, and the third valve would be fluid adjacent to the second valve.

[0094] It should be understood that the examples and embodiments described herein are for illustrative purposes only, and various modifications or variations will occur to those skilled in the art based on these examples and embodiments. Although various details have been omitted for clarity, various design alternatives may be implemented. Therefore, the examples herein should be considered illustrative rather than restrictive, and the disclosure should not be limited to the details presented herein, but rather can be modified within the scope of this disclosure.

[0095] It should be understood that while the above disclosure focuses on one or more specific exemplary embodiments, it is not limited to the examples discussed, but can also be applied to similar variations and mechanisms, and such similar variations and mechanisms are also considered to be within the scope of this disclosure.

Claims

1. An apparatus comprising: A wafer support defining a wafer support plane and configured to support a semiconductor wafer having a diameter of 300 mm, such that when the semiconductor wafer is supported by the wafer support, the lower side of the semiconductor wafer coincides with the wafer support plane. A nozzle having one or more sets of gas distribution ports distributed over a first region on a first side of the nozzle, wherein the first side faces the wafer support plane when the nozzle is placed with respect to the wafer support plane in a first configuration; and A first flow control surface has a radial cross-sectional profile extending between a first position and a second position on the nozzle, the second position being offset by a first distance relative to the first position in a direction perpendicular to and toward the wafer support plane, wherein the first position, the second position, and the first flow control surface are all within an annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the first distance is between 10% and 20% of a second distance, the second distance representing a gap through which process gas flows out from the processing area at the first position, and the second distance is measured in the direction perpendicular to and toward the wafer support plane.

2. The apparatus of claim 1, wherein the second position is farther from the central axis of the nozzle than the first position.

3. The apparatus according to claim 1, wherein the distances from the first position and the second position to the central axis of the nozzle are equal.

4. The apparatus of claim 1, wherein the first position and the second position are connected via the first flow-guiding control surface.

5. The apparatus of claim 4, wherein the cross-sectional profile of the first flow-guiding surface is nonlinear.

6. The apparatus of claim 5, wherein the cross-sectional profile of the first flow-guiding control surface has at least one curved portion.

7. The apparatus of claim 6, wherein the cross-sectional profile of the first flow-guiding surface has: A first curved portion, which is adjacent to the first region and tangent to the nozzle at the first position; and The second bend is tangent to a surface parallel to the wafer support plane at the second position.

8. The apparatus of claim 4, wherein the cross-sectional profile of the first flow-guiding control surface has a wall portion perpendicular to the first region.

9. The apparatus of claim 4, wherein the cross-sectional profile of the first flow-guiding surface has a wall that is inclined at 30 degrees toward the first region.

10. The apparatus of claim 1, wherein the first flow control surface is provided by a flow control component separate from the nozzle.

11. The apparatus of claim 1, wherein the first flow-guiding control surface is provided by an annular element extending around the entire first region.

12. The apparatus of claim 1, wherein the first flow-guiding control surface is provided by an annular segment extending only partially around the first region.

13. The apparatus of claim 12, further comprising a second flow control surface extending between a third position and a fourth position on the nozzle, the fourth position being offset from the third position by a third distance in a direction perpendicular to and toward the wafer support plane, wherein the third position, the fourth position, and the second flow control surface are all within the annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the third distance is between 10% and 20% of the fourth distance, the fourth distance being a distance between the third position of the nozzle and the wafer support plane in the direction perpendicular to and toward the wafer support plane.

14. The apparatus of claim 13, wherein the third distance is different from the first distance.

15. The apparatus of claim 1, wherein the first region is non-planar and protrudes toward the wafer support plane, and wherein the first flow control surface is connected to the nozzle at the first location.

16. The apparatus according to any one of claims 1 to 15, further comprising a controller configured to position the nozzle and one or both of the wafer support in the first configuration during at least a portion of a semiconductor processing operation, wherein one or more first process gases flow out from at least one of the gas distribution ports of the at least one set of gas distribution ports, wherein, In the first configuration, the second distance is between 6mm and 16mm.

17. The apparatus according to any one of claims 1 to 16, further comprising: Processing room; and Base, wherein: The first region of the nozzle is located within the treatment chamber, and The base is positioned below the nozzle and provides the wafer support.

18. An apparatus comprising: A wafer support defining a wafer support plane and configured to support a semiconductor wafer having a diameter of 300 mm, such that when the semiconductor wafer is supported by the wafer support, the lower side of the semiconductor wafer coincides with the wafer support plane. A nozzle base having one or more sets of gas distribution ports distributed over a first region on a first side of the nozzle base, wherein the first side faces the wafer support plane when the nozzle base is placed with the wafer support plane in a first configuration. as well as A first flow control surface extends between a first position and a second position on the nozzle base, the second position being offset by a first distance relative to the first position in a direction perpendicular to and toward the wafer support plane, wherein the first position, the second position, and the first flow control surface are all within an annular region centered on the first region and having an inner diameter of 290 mm and an outer diameter of 310 mm, and wherein the first distance is between 10% and 20% of a second distance, the second distance representing a gap through which process gas flows out from the processing area at the first position, and the second distance is measured in the direction perpendicular to and toward the wafer support plane.

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