Leak detection for split anode chambers

Abstract

Presented herein is a method for detecting a leak in an electrodeposition system including a split anode chamber. The method includes isolating the split anode chamber. A static pressure in the split anode chamber is adjusted. A pressure change in the split anode chamber is monitored. Whether the leak is present is determined based on the monitored pressure change being greater than a threshold pressure change.

Description

Background Technology

[0001] Electroplating is used in integrated circuit manufacturing processes to deposit conductive films onto substrates. Electroplating involves the electrochemical reduction of dissolved ions of a selected metal to their elemental state on the substrate to form a film of the selected metal. The electroplating system includes a cathode chamber in which a cathodic electrolyte circulates, and an anode chamber in which an anodic electrolyte circulates. A film is disposed between the cathodic electrolyte chamber and the anode electrolyte chamber. This film allows protons and ions of the selected metal to transport from the anode chamber to the cathode chamber while preventing the reverse transport of anions and organic additives. Summary of the Invention

[0002] This invention is provided to introduce the chosen concepts in a simplified form, which will be further described in the following detailed description. This invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that address any or all the shortcomings mentioned in any part of this disclosure.

[0003] The examples disclosed herein relate to systems and methods for detecting leaks in electrodeposition systems. In one example, a method for detecting leaks in an electrodeposition system comprising a split anode chamber is presented. The method includes isolating the split anode chamber. The static pressure in the split anode chamber is regulated. Pressure changes in the split anode chamber are monitored. The presence of a leak is determined based on the monitored pressure change being greater than a threshold pressure change.

[0004] In some such examples, regulating the static pressure in the separate anode chamber additionally or alternatively involves operating a pump coupled to the separate anode chamber.

[0005] In some such examples, the pressure change is additionally or alternatively monitored for a predetermined amount of time.

[0006] In some such examples, the pressure change is additionally or alternatively monitored at a pressure measuring device that is fluidly coupled to the separate anode chamber.

[0007] In some such examples, the method additionally or alternatively includes evacuating the fluid from the separate anode chamber before isolating it.

[0008] In some such examples, adjusting the static pressure in the separate anode chamber additionally or alternatively involves allowing gas to flow from a gas source into the separate anode chamber.

[0009] In some such examples, the separate anode chamber isolation additionally or alternatively includes an exhaust port in which an exhaust plug is inserted into the separate anode chamber conduit.

[0010] In some such examples, the separate anode chamber isolation additionally or alternatively includes an operating valve to isolate the separate anode chamber.

[0011] In some such examples, regulating the static pressure in the split anode chamber additionally or alternatively involves operating one or more hydraulic cylinders.

[0012] Another example provides a system for detecting leaks in an electrodeposition system comprising a split anode chamber. The system includes a pressure regulating mechanism fluidly coupled to the split anode chamber. A pressure measuring device is fluidly coupled to the split anode chamber to measure pressure changes within it.

[0013] In some such examples, the system additionally or alternatively includes one or more vent plugs configured to be inserted into the separate anode chamber conduit.

[0014] In some such examples, the system additionally or alternatively includes an overpressure relief valve.

[0015] In some such examples, the system additionally or alternatively includes a shut-off valve.

[0016] In some such examples, the system additionally or alternatively includes a separate anode chamber inlet fitting configured to couple to the separate anode chamber circuit.

[0017] In some such examples, the separate anode chamber inlet fitting is additionally or alternatively coupled to the separate anode chamber circuit at the separate anode chamber tower.

[0018] Another example provides an electrodeposition system. The electrodeposition system includes a separate anode chamber. A pressure measuring device is fluidly coupled to the separate anode chamber. A controller is configured with instructions to regulate the pressure in the separate anode chamber. The controller is also configured with multiple instructions to monitor pressure changes at the pressure measuring device; and to determine whether a leak exists based on the monitored pressure change exceeding a threshold pressure change.

[0019] In some such examples, the instruction to adjust the pressure in the split anode chamber additionally or alternatively includes an instruction to couple the split anode chamber to a gas source.

[0020] In some such examples, the controller is additionally or alternatively configured with multiple instructions to evacuate fluid from the separate anode chamber before adjusting the pressure in the separate anode chamber.

[0021] In some such examples, the pressure change is additionally or alternatively monitored for a predetermined amount of time.

[0022] In some such examples, the controller is further configured with multiple instructions to operate one or more valves to isolate the separate anode chamber from the atmosphere before adjusting the pressure in the separate anode chamber. Attached Figure Description

[0023] Figure 1 A block diagram of an exemplary electrodeposition system is shown.

[0024] Figure 2 A block diagram of an exemplary electrodeposition system is shown, comprising a split anode chamber tower fluidly coupled to multiple split anode chambers.

[0025] Figure 3 This illustration schematically demonstrates a method for leak testing of an electrodeposition system based on fluid levels.

[0026] Figure 4 A block diagram of an exemplary system for detecting leaks in an electrodeposition system including a split anode chamber is shown.

[0027] Figure 5 A flowchart illustrating an exemplary method for detecting leaks in an electrodeposition system including a split anode chamber is shown.

[0028] Figure 6 Show Figure 5 An exemplary graph showing the pressure decay over time in an example implementation of the method.

[0029] Figure 7 A block diagram of an exemplary electrodeposition system is shown, including a separate anode chamber and an integrated leak testing system.

[0030] Figure 8 This illustration shows an example computing system. Detailed Implementation

[0031] The term "anode chamber" generally refers to a physical structure configured to contain at least one anode and at least one anolyte and to provide selective separation from the cathode chamber.

[0032] The term "anodic electrolyte" generally refers to the solution used in the anode chamber during electroplating.

[0033] The term "cathode chamber" generally refers to a physical structure configured to contain at least one cathode and at least one cathode electrolyte and to provide selective separation from the anode chamber.

[0034] The term "cation exchange membrane" generally refers to a membrane that allows one or more cations to selectively pass through while simultaneously blocking the transport of other substances, such as anions and organic substances.

[0035] The term "clean and dry air line" typically refers to a duct that is coupled to a source fluid of pressurized air.

[0036] The terms “electroplating,” “plating,” “deposition,” and their variations generally refer to the process of reducing dissolved ions of one or more metals on a substrate surface to form a film of one or more metals.

[0037] The term "electrodeposition system" generally refers to a machine configured to perform electroplating.

[0038] The term "gas source" typically refers to a pressurized source of a gaseous substance (e.g., an inert gas).

[0039] The term "inlet fitting" typically refers to a device that couples a device to the inlet of a container.

[0040] The term "membrane frame" generally refers to the device that supports the ion exchange membrane.

[0041] The term "pressure change" typically refers to the return of pressure inside a container to atmospheric pressure after an increase or decrease.

[0042] The terms "pressure measuring device" and "pressure gauge" generally refer to devices that measure the pressure of fluids or gases in a container.

[0043] The term "pump" generally refers to a device used to move fluids or gases.

[0044] The term "separate anode chamber" generally refers to an anode chamber that is separated from the cathode chamber by a membrane.

[0045] The term "separate anode chamber piping" typically refers to a conduit configured to supply anolyte to a separate anode chamber.

[0046] The term "separate anode chamber loop" typically refers to the path through which the anolyte recirculates over time through the separate anode chamber.

[0047] The term "separate anode chamber tower" generally refers to a storage tank for anolyte fluid coupled to one or more separate anode chambers.

[0048] The term "vent plug" generally refers to a device inserted into a container to isolate the container from the atmosphere.

[0049] The term "vent" typically refers to an opening on a container used to couple the container's interior to the atmosphere.

[0050] The term "valve" and related valve types, such as "inlet valve," "overpressure relief valve," "sealing valve," and "shut-off valve," generally refer to devices used to regulate, direct, or control the flow of fluid through conduits.

[0051] Some electrodeposition systems include a split anode chamber (SAC) that separates the cathodic plating solution (e.g., cathodic electrolyte) from the anodic plating solution (e.g., anodic electrolyte). The SAC is separated from the cathodic plating solution by a membrane that allows cations (e.g., metal ions, acids, water) to pass through, but does not allow organic additives from the plating solution to enter the SAC, which could form undesirable byproducts and passivate the anode.

[0052] During tool startup and routine preventative maintenance of the anode and / or membrane, the SAC is disassembled and reassembled. If the membrane frame and membrane are not installed correctly, leakage may occur. Consequently, unwanted fluid components may move between the anolyte and catholyte, potentially damaging the anode.

[0053] Therefore, this paper discloses examples related to leak testing, in which SAC pressure changes are monitored over time. In some examples, a reassembled but still empty SAC is pressurized with air or another gas. Pressure changes are then monitored over a period of time. This type of leak testing can help reduce preventative maintenance downtime by providing efficient and accurate leak detection methods and systems.

[0054] Figure 1 A block diagram of an exemplary electrodeposition system 100 is schematically shown. The electrodeposition system 100 includes an electroplating tank 102, which includes an anode chamber 104 and a cathode chamber 106. The electrodeposition system 100 also includes a cation exchange membrane 108 separating the anode chamber 104 and the cathode chamber 106, and a high-resistivity virtual anode (HRVA) 109 within the cathode chamber 106. The anode chamber 104 includes an anode 110. The anode chamber 104 further contains an anolyte. The cathode chamber 106 contains a catholyte. The catholyte includes ionic material to be deposited as a metal on a cathode layer of a substrate 111 by electrochemical reduction.

[0055] In some examples, anode 110 may include a consumable anode formed of the deposited metal, or it may include an inert anode. When anode 110 contains the deposited metal, the electrochemical oxidation of anode 110 at least partially replenishes the ionic material consumed by the electroplating process. Sometimes, a large amount of anolyte and / or catholyte may be added to replenish the ionic material. When anode 110 is configured as an inert anode, the metal being deposited may be provided in the anolyte.

[0056] The cation exchange membrane 108 prevents organic and anionic substances from passing between the cathode chamber 106 and the anode chamber 104, while allowing metal ions to pass from the anode chamber 104 to the cathode chamber 106. As described above, the HRVA 109 includes an ion-resistive element that approximates a suitable, constant, and uniform current source near the substrate cathode. In other configurations, the cation exchange membrane 108 can be replaced by another suitable type of membrane.

[0057] The substrate holder 112 is coupled to a substrate holder movement system 113, which includes a lifter 114 configured to adjust the spacing between the substrate holder 112 and the HRVA 109. For example, the lifter 114 can lower the substrate holder 112 to position the substrate 111 within the cathodic electrolyte for electroplating. After electroplating, the lifter 114 can further raise the substrate holder 112 from the cathodic electrolyte. The substrate holder movement system 113 may also include components for controlling the opening and closing of the substrate holder 112.

[0058] The cathode electrolyte can be circulated between the cathode chamber 106 and the cathode electrolyte storage tank 120 by gravity and a combination of one or more pumps 122. Similarly, the anolyte can be circulated between the anolyte storage tank 124 and the anode chamber 104 by gravity and a combination of one or more pumps 126.

[0059] In some electrodeposition systems, multiple plating tanks can be used to perform electroplating operations on multiple substrates in parallel. In some such examples, a central cathode electrolyte and / or anolyte reservoir can supply cathode electrolyte and / or anolyte to multiple plating tanks. In other such examples, separate cathode electrolyte and / or anolyte reservoirs can be used to supply multiple plating tanks. In still other examples, the electrodeposition system may include a single plating tank. In cases where the electrodeposition system comprises multiple plating tanks, a single lifter can be configured to raise two or more substrate supports from two or more different plating tanks.

[0060] Figure 2 An exemplary electrodeposition system 200 is shown, comprising a central anolyte storage tank fluidly coupled to multiple plating tanks, each plating tank including a separate anolyte chamber. The central anolyte storage tank 202 is also referred to herein as a SAC tower. The SAC tower 202 includes an internal circulation pump 204. The SAC tower 202 is fluidly coupled to plating tanks 210 and 212. In other examples, additional plating tanks may be included. In a further example, the SAC tower may be omitted.

[0061] Similar to electroplating tank 102, electroplating tank 210 includes an anode chamber 214 and a cathode chamber 216. The anode chamber 214 is separated from the cathode chamber 216 by a membrane 218. The membrane 218 is supported by a membrane frame 219. The anode chamber 214 includes an anode 220, which is supplied with an anode potential via a charging plate 225. The cathode chamber 216 includes a cathode electrolyte and a substrate 221 housed within a substrate support 222.

[0062] Anode chamber 214 further contains anolyte. The anolyte can be circulated through SAC tower 202 and anode chamber 214 by gravity and a combination of one or more pumps 226. SAC tower 202, anode chamber 214, pumps 226 and accompanying fluid lines can form SAC loop 228.

[0063] Similar to electroplating tank 210, electroplating tank 212 includes an anode chamber 234 and a cathode chamber 236. The anode chamber 234 is separated from the cathode chamber 236 by a membrane 238. The membrane 238 is supported by a membrane frame 239. The anode chamber 234 includes an anode 240, which is supplied with an anode potential via a charging plate 245. The cathode chamber 236 includes a cathode electrolyte and a substrate 241 housed within a substrate support 242.

[0064] Anode chamber 234 further contains anolyte. The anolyte can be circulated through SAC tower 202 and anode chamber 234 by gravity and a combination of one or more pumps 246. SAC tower 202, anode chamber 234, pumps 246 and accompanying fluid lines can form SAC loop 248.

[0065] Back Figure 1 After the substrate 111 is loaded into the substrate holder 112, the substrate holder 112 is lowered toward the HRVA 109 by a lifter 114. The substrate 111 faces the surface of the HRVA 109 and is spaced apart from the HRVA 109 during electroplating. An electric field is established between the anode 110 and the substrate 111. This electric field drives dissolved metal cations from the anode chamber 104 into the cathode chamber 106. At the substrate 111, the metal cations are electrochemically reduced to deposit on the substrate 111. An anode potential is applied to the anode 110 via a charging plate 115, and a cathode potential is provided to the cathode of the substrate 111 via a cathode electrical connector 116 to form a circuit. In some examples, the substrate holder 112 may be rotated during electroplating by a rotary motor 117.

[0066] The electrodeposition system 100 also includes a computing system 130, which will be referred to below. Figure 8The various aspects thereof are described in more detail below. The computing system 130 may include executable instructions to control any suitable functions of the electrodeposition system 100. Exemplary functions include electroplating processes, substrate loading / unloading processes, and precipitate dissolution processes. In some examples, the computing system 130 may be configured to communicate with a remote computing system 140 via a suitable computer network. The remote computing system 140 may include any suitable computing system. Examples include networked workstation computers, enterprise computing systems, and / or cloud computing systems. It should be understood that in some examples, the remote computing system 140 may communicate with and control multiple electrodeposition systems.

[0067] Figure 3 This schematically illustrates an exemplary method for leak testing of an electrodeposition system based on fluid levels. In the illustrated example, the electrodeposition system 300 includes a SAC tower 302. The SAC tower 302 includes at least an internal circulation pump 304, an exhaust port 306, and an inlet 308. It shows a portion of an exemplary electroplating tank 310. The electroplating tank 310 includes a separate anode chamber 312 configured to contain an anode 314 and an electroplating solution 316. A membrane 318 is supported by a membrane frame 320 that separates the separate anode chamber 312 from a cathode chamber 322. The cathode chamber 322 is configured to contain a substrate and a cathode electrolyte (not shown). The electroplating solution 316 circulates between the SAC tower 302 and the separate anode chamber 312 via an SAC loop 324, which includes one or more pumps 326. As mentioned above, in other examples, the SAC tower may be omitted.

[0068] As described above, membrane 318 is used to separate the cathodic electrolyte from the anodic electrolyte, thereby preventing the passage of specific additives in the cathodic electrolyte that would otherwise corrode or passivate the anode 314. Membrane installation can occur during setup, preventative maintenance, anode replacement, and / or chemical changes (e.g., from copper to tin-silver). Proper membrane assembly is required to prevent cathodic electrolyte leakage into the anode chamber. Therefore, leak checks are performed after membrane installation to determine if the assembled separate anode chamber is fluid-tight.

[0069] One feasible method for performing leak checks is to fill the SAC tower and the separate anode chamber with plating solution 316; circulate the plating solution 316; and observe whether the actual liquid level in the SAC tower drops (as shown at 330). Therefore, a drop in liquid level indicates a leak. Leaks can occur, for example, due to small cracks or holes in and around the membrane frame, pipe leaks, improper membrane frame torque, gasket deterioration, or defects in the membrane itself (e.g., tears, perforations). The liquid level drop in the SAC tower is monitored over a long period. If the initial monitoring period shows a larger-than-expected drop in liquid level, the SAC is inspected and reassembled, and the monitoring period can then be repeated as needed. Therefore, this type of leak test can result in significant tool downtime.

[0070] Furthermore, as shown in 332, when the SAC and SAC tower are filled with plating solution, air bubbles often remain in the SAC loop. This SAC leak check involves circulating the solution and removing any air bubbles from the SAC into the SAC tower, which also lowers the solution level on the SAC tower. Using this method, minor fluid leaks in the SAC cannot be distinguished from the level drop caused by removing air bubbles, thus often leading to inaccurate SAC leak check results. Therefore, this method may miss actual leaks where the level drop is smaller than expected.

[0071] Therefore, a leak test that is more sensitive, stable, and time-saving than this liquid level drop test is needed. Figure 4 A block diagram of an exemplary system 400 for detecting leaks in an electrodeposition system including a split anode chamber is shown. In this example, system 400 is used to detect leaks in an electrodeposition system 300 including a split anode chamber 312.

[0072] System 400 can be used to perform relatively rapid pressure change tests by varying the pressure within the SAC and then observing the pressure change over time. In some examples, such a system can be directly coupled to SAC 312, SAC tubing, or SAC loop 324. In this example, system 400 is reversibly coupled to SAC tower 302. Pressurizing the SAC components can determine the integrity of membrane 318, membrane frame 320, and related components. System 400 is compatible with a variety of SAC configurations and various cation exchange membrane types (e.g., membranes for copper plating or tin / silver plating).

[0073] System 400 includes a pressure regulating mechanism 402 and a pump fitting 404, which fluidly couples the pressure regulating mechanism 402 to a conduit 405. In some examples, the pressure regulating mechanism 402 may be a pump. Conduit 405 is fluidly coupled to a shut-off valve 406. Pressure gauge 408 is fluidly coupled to shut-off valve 406 via conduit 407. Overpressure relief valve 410 is fluidly coupled to pressure gauge 408 via conduit 409. Conduit 411 is coupled to overpressure relief valve 410. Conduit 411 is coupled to one or more vent plugs 412 and fluidly coupled to a separate anode chamber inlet fitting 414. In this way, pressure regulating mechanism 402 and pressure gauge 408 are fluidly coupled to separate anode chamber inlet fitting 414. Fittings and conduits may be made of any suitable material, such as metal (e.g., stainless steel), plastic (e.g., PTFE), rubber, etc.

[0074] A vent plug 412 is configured to insert into the segregated anode chamber line at vent port 306, thereby isolating the SAC circuit from the atmosphere and maintaining pressure therein. In examples where the SAC or SAC line is not open to the atmosphere, or where other mechanisms (e.g., valves) exist to isolate the SAC from the atmosphere, the vent plug 412 may be omitted. A segregated anode chamber line inlet fitting 414 is configured to couple to the segregated anode chamber circuit 324 at inlet 308 of the SAC tower 302. In other examples, the inlet fitting may be a fitting for a T-joint or other opening in the SAC or SAC line. In further examples, the inlet fitting may take any other suitable form.

[0075] When the split anode chamber inlet fitting 414 is coupled to inlet 308, and when the vent plug 412 is inserted into vent port 306, the pressure regulating mechanism 402 can be operated to change the pressure in the SAC circuit 324. The pressure regulating mechanism 402 can be used to increase (pressurize) or decrease (evacuate) the pressure in the SAC circuit 324. When the pressure regulating mechanism 402 is a pump, the pump can be, for example, a motorized pump or a pneumatic manual pump.

[0076] When a predetermined pressure change (e.g., 1 psi) is reached, the shut-off valve 406 can be operated to disconnect the pressure regulating mechanism 402 from the SAC circuit 324, thereby isolating the SAC circuit 324. An overpressure relief valve 410 can be used to release pressure (or vacuum) above a predetermined level (e.g., 3-5 PSI) to prevent damage to components in the SAC circuit 324. The overpressure relief valve may be located within the system 400, on the side opposite the shut-off valve 406 to the pressure regulating mechanism 402. A pressure gauge 408 may be digital or analog and can be used to monitor pressure when the pressure regulating mechanism 402 changes the pressure in the SAC circuit 324 and during subsequent pressure change phases. In other examples, the pressure gauge 408 may be supplemented or replaced by other pressure sensing mechanisms, such as indirect pressure sensing mechanisms coupled within the SAC circuit 324.

[0077] Figure 5 A flowchart illustrating an exemplary method 500 for detecting leaks in an electrodeposition system including a split anode chamber is shown. Method 500 will be described with respect to system 400 and electrodeposition system 300, but can be performed using any suitable leak detection system and electrodeposition system including a split anode chamber (see [link]). Figure 7 Additional examples).

[0078] At 510, method 500 includes isolating the separate anode chamber. In some examples, sealing the separate anode chamber includes inserting a vent plug (e.g., vent plug 412) into a vent port (e.g., 306) of the separate anode chamber conduit. In other examples, sealing the separate anode chamber includes operating a valve to seal the separate anode chamber.

[0079] In some examples, method 500 includes removing fluid from the separate anode chamber before sealing it. For example, some or all of the fluid in the separate anode chamber may be evacuated. In some examples, sealing the separate anode chamber is performed in response to membrane replacement. In other examples, sealing the separate anode chamber is performed in response to anode replacement, initial setup of the electrodeposition system, or performance issues. Method 500 can also be used to verify the sealing performance of individual parts during tooling manufacturing or to evaluate spare parts supplied by a vendor.

[0080] At 520, method 500 includes adjusting the static pressure in the split anode chamber. In some examples, adjusting the static pressure in the split anode chamber includes generating a predetermined change in the static pressure. The predetermined change in static pressure can be determined empirically during the calibration process. For example, the predetermined change can be a change in static pressure that will return to atmospheric pressure within a desired time interval, even in the absence of leakage. The predetermined change in static pressure can be less than a pressure or vacuum known to damage the SAC. In other examples, the predetermined change can be defined in a different manner. Adjusting the static pressure in the split anode chamber can include increasing or decreasing the static pressure (e.g., generating a vacuum). For example, adjusting the static pressure in the split anode chamber can include operating a pump (e.g., pressure regulating mechanism 402) coupled to the split anode chamber. In other examples, adjusting the static pressure in the split anode chamber includes allowing gas to flow from a gas source into the split anode chamber. This document will combine Figure 7 This configuration is discussed further. In a further example, regulating the static pressure in the split anode chamber includes operating one or more hydraulic cylinders, a fluid storage tank with a large hydraulic head, etc. In some examples, regulating the static pressure in the split anode chamber may include generating a predetermined pressure change in the split anode chamber. As a non-limiting example, the predetermined pressure change may be 1 PSI above atmospheric pressure.

[0081] At 530, method 500 includes monitoring pressure changes within the separate anode chamber. In some examples, monitoring pressure changes within the separate anode chamber may include monitoring absolute pressure and calculating pressure changes based on an initial starting pressure. In some examples, pressure may be monitored relative to the initial starting pressure. Pressure changes can be monitored using a pressure measuring device (e.g., a pressure gauge) fluidly coupled to the separate anode chamber, such as pressure gauge 408. Thus, the pressure measuring device may be coupled within the separate anode chamber itself, within the separate anode chamber piping, within the separate anode chamber tower, or at other locations fluidly coupled to the separate anode chamber itself when the separate anode chamber is isolated from the atmosphere. Alternatively or additionally, pressure changes may be monitored indirectly, for example, by measuring the height level of a sensor configured to measure the hydraulic head. In some examples, pressure changes are monitored for a predetermined amount of time (e.g., 20 minutes). This predetermined amount of time may be determined empirically, for example, during calibration. In some examples, this predetermined amount of time may represent a threshold time beyond which, within a certain confidence level, a leak condition and a leak-free condition will be indistinguishable. In some examples, pressure changes are monitored until a predetermined amount of pressure change occurs. In other examples, the rate of pressure change over time is determined.

[0082] At 540, method 500 includes determining the presence of a leak based on a monitored pressure change greater than a threshold pressure change. For example, when the pressure change is an increase in pressure, the pressure change test passes if the pressure drop is less than a predetermined pressure drop. If the pressure drop is greater than the predetermined pressure drop, the pressure change test fails. In the example of evacuation in a split anode chamber piping, the pressure change is an increase in pressure towards atmospheric pressure. In some examples, the rate of pressure change can be compared to the rate of change of a threshold pressure. Any threshold pressure change can be determined by performing pressure decay tests on a known leaking (or leak-free) SAC based on iterative benchmarking. Initial pressure, volume, and the presence or absence of fluid can affect the threshold pressure change because the rate of pressure decay is proportional to the overall pressure of the system and inversely proportional to the total volume of the SAC. The threshold pressure change can also depend on the type of membrane used.

[0083] In this way, method 500 can distinguish between actual SAC leaks and bubble removal, which was not possible with previous methods (e.g., regarding...). Figure 3 (As described above). This process is more reliable, robust, and consistent for determining SAC leaks, membrane perforations, or hardware installation problems. Method 500 can be completed in 20 minutes or less, thus significantly reducing the time required for previous methods, such as those concerning... Figure 3 The time required for the described method may, in some cases, be between 4 and 12 hours.

[0084] Figure 6 An exemplary graph 600 illustrates the pressure decay over time for an example implementation of method 500. Graph 600 shows an exemplary pressure decay curve that can be observed when the SAC circuit is pressurized with air and then depressurized for 20 minutes. Graph 605 represents the pressure decay of a leak-free, complete SAC circuit. Graph 610 represents the pressure decay of a leaking SAC circuit when the SAC circuit is filled with plating solution, with a leakage rate of 1-3 mL / h. Graph 615 represents the pressure decay of a leaking SAC circuit when the SAC circuit is filled with plating solution, with a leakage rate of 32 mL / h. Graph 620 represents the pressure decay of a leaking SAC circuit when the SAC circuit is filled with plating solution, with a leakage rate of 720 mL / h. Graph 625 represents the minimum detectable leak in the SAC circuit when using a liquid level drop technique. As shown, Graph 610 represents a leak that is detectable by pressure decay methods (e.g., method 500) but cannot be detected using a liquid level drop technique. The minimum pressure drop can be seen in Graph 605, indicating that very small leaks can be detected using pressure decay methods. A slight drop in pressure may simply be due to the SAC circuit stabilizing after pressurization. This drop could represent the maximum pressure drop observable when the SAC circuit passes the pressure decay test.

[0085] Figure 7 An electrodeposition system 700, including a separate anode chamber and an integrated leak testing system, is schematically shown. The electrodeposition system 700 includes a SAC tower 702. The SAC tower 702 includes at least an internal circulation pump 704 and an exhaust port 706. A portion of an exemplary electroplating tank 710 is shown. The electroplating tank 710 includes a separate anode chamber 712 configured to contain an anode 714 and an anolyte. A membrane 718 is mounted on a membrane frame 720 that separates the separate anode chamber 712 from a cathode chamber 722. The cathode chamber 722 is configured to contain a substrate and a catholyte (not shown). Electroplating solution 716 circulates between the SAC tower 702 and the separate anode chamber 712 via an SAC loop 724, which includes one or more pumps 726.

[0086] The electrodeposition system 700 also includes one or more sealing valves 730 operable to close the exhaust port 706 and thereby seal the SAC circuit 724 from the atmosphere. An inlet valve 732 operable to connect the SAC circuit 724 to a gas source 734. The gas source 734 may be a clean, dry air source, an N2 source, an inert gas source, etc. A pressure gauge 736 is coupled within the SAC circuit.

[0087] The controller 740 can be equipped with instructions to automatically perform a pressure variation leak test on the SAC circuit 724. This test can be performed when changing the membrane 718, changing the anode 714, or during initial tooling configuration, etc. In some examples, the controller is equipped with instructions to evacuate fluid from the separate anode chamber circuit before starting the test.

[0088] The controller 740 may be equipped with instructions to operate one or more sealing valves 730 to seal the split anode chamber circuit 724 from the atmosphere. The controller 740 may further be equipped with instructions to operate an inlet valve 732 to connect the split anode chamber circuit 724 to a gas source 734. Gas from the gas source 734 can be used to pressurize the split anode chamber circuit 724 to a predetermined pressure. The controller 740 may be further configured with instructions to operate the inlet valve 732 to decouple the split anode chamber circuit 724 from the gas source 734. The controller 740 may be further configured with instructions to monitor pressure changes at pressure gauge 736. Pressure changes can be monitored over a predetermined time period (e.g., 20 minutes). The controller 740 may be further equipped with instructions to determine whether a leak exists in the split anode chamber circuit based on the monitored pressure changes. The controller 740 may be further configured with instructions to operate the sealing valve 730 to recouple the SAC circuit 724 to the atmosphere, thereby releasing any residual gas pressure.

[0089] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components. These systems may be integrated with electronics for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may be referred to as a “controller”, which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller may be programmed to control any of the processes disclosed herein, including temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, flow rate settings, fluid delivery settings, and / or position and operation settings, wafer transfer into and out of tools connected to or docked with a specific system, and other transfer tools and / or loading locks.

[0090] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. Integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions can be instructions sent to the controller in the form of various individual settings (or program files), which define operating parameters for performing specific processes on or for a semiconductor wafer or system. In some embodiments, operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more structures (e.g., layers, materials, metals, surfaces, circuits, and / or bare wafer dies).

[0091] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the “cloud” or be all or part of a fab host system, allowing remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics of multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide processing recipes to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool to which the controller is configured to interface with or control the tool. Therefore, as described above, a controller can be distributed, for example, by comprising one or more discrete controllers networked together and operating toward a common purpose (such as the processing and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a room that communicate with one or more integrated circuits remotely (e.g., at the platform level or as part of a remote computer), which together control processing on the room.

[0092] As described above, depending on one or more processing steps to be performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the plant, a host computer, another controller, or tools used in the transport of materials to and from the tool location and / or loading port in the semiconductor manufacturing plant.

[0093] Figure 8 A non-limiting example of a computing system 800 capable of performing one or more of the methods and processes described above is schematically shown. The computing system 800 is shown in a simplified form. The computing system 800 may take the form of one or more personal computers, workstations, computers integrated with substrate processing tools, and / or network-accessible server computers.

[0094] The computing system 800 includes a logic machine 802 and a memory machine 804. The computing system 800 may optionally include a display subsystem 806, an input subsystem 808, a communication subsystem 810, and / or... Figure 8Other components not shown. Computing system 130 and controller 740 are examples of computing system 800.

[0095] The logic machine 802 includes one or more physical devices configured to execute instructions. For example, the logic machine may be configured to execute instructions that are part of one or more application programs, services, programs, routines, libraries, objects, components, data structures, or other logical constructs. Such instructions may be implemented to perform tasks, implement data types, transition the state of one or more components, achieve technical effects, or otherwise achieve desired results.

[0096] A logic machine may include one or more processors configured to execute software instructions. Additionally or alternatively, a logic machine may include one or more hardware or firmware logic machines configured to execute hardware or firmware instructions. The logic machine's processor may be single-core or multi-core, and the instructions executed on it may be configured for sequential, parallel, and / or distributed processing. The various components of the logic machine may optionally be distributed across two or more separate devices that can be remotely located and / or configured for coordinated processing. The various aspects of the logic machine can be virtualized and executed via remotely accessible, networked computing devices configured in a cloud computing configuration.

[0097] The storage device 804 includes one or more physical devices configured to store instructions 812, which are executable by a logic machine to implement the methods and processes described herein. When such methods and processes are implemented, the state of the storage device 804 can be transformed—for example, to store different data.

[0098] Storage device 804 may include removable and / or built-in devices. Storage device 804 may include optical storage (e.g., CD, DVD, HD-DVD, Blu-ray disc, etc.), semiconductor storage (e.g., RAM, EPROM, EEPROM, etc.) and / or magnetic storage (e.g., hard disk drive, floppy disk drive, magnetic tape drive, MRAM, etc.). Storage device 804 may include volatile, non-volatile, dynamic, static, read / write, read-only, random access, sequential access, location-addressable, file-addressable, and / or content-addressable devices.

[0099] It should be understood that the memory 804 includes one or more physical devices. However, alternatively, aspects of the instructions described herein may be propagated via a communication medium (e.g., electromagnetic signals, optical signals, etc.) that is not held by a physical device for a limited duration.

[0100] The logic unit 802 and the memory unit 804 can be integrated together into one or more hardware logic components. For example, such hardware logic components may include field-programmable gate arrays (FPGAs), program-specific and application-specific integrated circuits (PASICs / ASICs), program-specific and application-specific standard products (PSSPs / ASSPs), systems-on-a-chip (SoCs), and complex programmable logic devices (CPLDs).

[0101] When included, the display subsystem 806 can be used to present a visual representation of the data stored by the memory 804. This visual representation may take the form of a graphical user interface (GUI). Since the methods and processes described herein change the data held by the memory and thus change the state of the memory, the state of the display subsystem 806 can also be transformed to visually represent the changes in the underlying data. The display subsystem 806 may include one or more display devices using virtually any type of technology. Such display devices may be combined with the logic machine 802 and / or the memory 804 in the same housing, or such display devices may be peripheral display devices.

[0102] When included, the input subsystem 812 may include or interact with one or more user input devices, such as a keyboard, mouse, or touchscreen. In some examples, the input subsystem may include or interact with selected Natural User Input (NUI) components. Such components may be integrated or peripheral, and the translation and / or processing of input actions may be performed on-device or off-device. Exemplary NUI components may include microphones for speech and / or voice recognition, and infrared, color, stereo, and / or depth cameras for machine vision and / or gesture recognition.

[0103] When included, the communication subsystem 810 can be configured to communicatively couple the computing system 800 to one or more other computing devices. The communication subsystem 810 may include wired and / or wireless communication devices compatible with one or more different communication protocols. As a non-limiting example, the communication subsystem may be configured to communicate using a wireless telephone network, or a wired or wireless local area network or wide area network. In some examples, the communication subsystem may allow the computing system 800 to send messages to and / or receive messages from other devices via a network such as the Internet.

[0104] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these particular examples or illustrations should not be considered limiting, as many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown and / or described may be performed in the order shown and / or described, in another order, in parallel, or omitted. Similarly, the order of the above processing may be changed.

[0105] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of various processes, systems and configurations, as well as other features, functions, behaviors and / or characteristics disclosed herein, and any and all equivalent schemes thereof.

Claims

1. A method for detecting leakage in an electrodeposition system comprising a split anode chamber, the method comprising: Isolate the separate anode chamber; Adjust the static pressure in the split anode chamber; Monitoring pressure changes in the separated anode chamber; and The presence of the leak is determined based on the monitored pressure change being greater than a threshold pressure change.

2. The method according to claim 1, wherein, Adjusting the static pressure in the split anode chamber involves operating a pump coupled to the split anode chamber.

3. The method according to claim 1, wherein, The pressure change is monitored for a predetermined amount of time.

4. The method according to claim 1, wherein, The pressure changes are monitored at a pressure measuring device that is fluidly coupled to the separated anode chamber.

5. The method according to claim 1, further comprising: Fluid is evacuated from the separate anode chamber before isolating it.

6. The method according to claim 1, wherein, Adjusting the static pressure in the split anode chamber involves allowing gas to flow from a gas source into the split anode chamber.

7. The method according to claim 1, wherein, Isolating the separate anode chamber includes inserting an exhaust plug into the exhaust port of the separate anode chamber piping.

8. The method according to claim 1, wherein, The isolation of the separate anode chamber includes an operating valve to isolate the separate anode chamber.

9. The method according to claim 1, wherein, Adjusting the static pressure in the split anode chamber involves operating one or more hydraulic cylinders.

10. A system for detecting leaks in an electrodeposition system comprising a split anode chamber, the system comprising: A pressure regulating mechanism, fluidly coupled to the separated anode chamber; and A pressure measuring device, fluidly coupled to the separate anode chamber to measure pressure changes in the separate anode chamber.

11. The system of claim 10, further comprising: One or more vent plugs are configured to be inserted into the separate anode chamber piping.

12. The system of claim 10, further comprising an overpressure relief valve.

13. The system of claim 10, further comprising a shut-off valve.

14. The system of claim 10, further comprising: a separate anode chamber inlet fitting configured to be coupled to the separate anode chamber circuit.

15. The system according to claim 14, wherein, The separate anode chamber inlet fitting is coupled to the separate anode chamber circuit at the separate anode chamber tower.

16. An electrodeposition system comprising: Separate anode chamber; Pressure measuring device, which is fluidly coupled to the separated anode chamber; and The controller is configured with instructions to: This causes the pressure in the split anode chamber to be adjusted; This causes pressure changes at the pressure measuring device to be monitored; and This allows for the determination of whether a leak exists in the split anode chamber based on the monitored pressure change being greater than a threshold pressure change.

17. The electrodeposition system according to claim 16, wherein, The instruction to adjust the pressure in the split anode chamber includes multiple instructions to couple the split anode chamber to a gas source.

18. The electrodeposition system according to claim 16, wherein, The controller is also configured to cause fluid to be evacuated from the separate anode chamber before adjusting the pressure in the separate anode chamber.

19. The electrodeposition system according to claim 16, wherein, The pressure change is monitored for a predetermined amount of time.

20. The electrodeposition system according to claim 16, wherein, The controller is also configured to operate one or more valves to isolate the separate anode chamber from the atmosphere before adjusting the pressure in the separate anode chamber.

Images