Ferroelectric electro-optic modulator device

Abstract

A ferroelectric electro-optic modulator device includes at least one supporting substrate or layer; at least one supporting oxide material or layer; at least one ferroelectric material or layer, wherein the at least one ferroelectric material or layer includes or defines at least one elongated waveguide core of at least one elongated waveguide; at least one intermediate layer, the at least one intermediate layer including or consisting of at least one polycrystalline silicon layer or material disposed or deposited between at least one supporting oxide material or layer and at least one supporting silicon substrate or layer; and a plurality of metal electrodes.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to European patent application EP24167779.8, filed on March 28, 2024, the disclosure of which is incorporated herein by reference in its entirety for all purposes. Technical Field

[0003] This invention relates to the field of electro-optic modulation technology, and particularly to a ferroelectric electro-optic modulator device or a photonic integrated circuit ferroelectric electro-optic modulator device. Background Technology

[0004] Photonic integrated electro-optic modulators are key to high-speed signal processing and transmission, converting electronic signals into optical signals in applications ranging from radio frequency (RF) analog links to digital optical communication networks.

[0005] US2021 / 364696, US2002 / 172487 and WO2023 / 118926 all disclose ferroelectric waveguide devices, the contents of which are incorporated herein by reference in their entirety for all purposes.

[0006] However, electro-optic modulators face bandwidth and reliability challenges due to electrical losses or radio frequency (RF) losses, including ohmic losses and dielectric absorption losses in metals. Summary of the Invention

[0007] The purpose of this invention is to reduce such electrical losses or radio frequency (RF) losses in electro-optic modulators.

[0008] The present invention addresses the aforementioned inconveniences by providing a ferroelectric electro-optic modulator device.

[0009] The ferroelectric electro-optic modulator device may include: At least one supporting substrate or layer, wherein the at least one supporting substrate or layer (3) comprises or is composed of a single crystal or a single crystal silicon substrate or layer. At least one supporting oxide material or layer disposed or deposited on the silicon substrate or layer At least one ferroelectric material or layer disposed or deposited on the at least one supporting oxide material or layer, wherein the at least one ferroelectric material or layer includes or defines at least one elongated waveguide core, the at least one elongated waveguide core being configured to guide light within the at least one elongated waveguide and through the at least one ferroelectric material or layer. At least one intermediate layer or material, said at least one intermediate layer or material may comprise at least one polycrystalline silicon layer or material disposed or deposited between the at least one supporting oxide material or layer and the at least one supporting silicon substrate or layer, or at least one amorphous silicon layer or material thereof, and At least one or more metal electrodes, wherein the at least one or more metal electrodes are disposed on and / or in contact with the at least one ferroelectric material or layer, or wherein the at least one or more metal electrodes are disposed on and / or in contact with the at least one supporting oxide material or layer, or wherein the at least one or more metal electrodes are disposed on and / or in contact with the at least one cladding material or layer, wherein the at least one cladding material or layer is disposed on or deposited on the at least one ferroelectric material or layer and / or the at least one supporting oxide material or layer; the at least one or more metal electrodes are configured to generate an electric field within the at least one ferroelectric material or layer to modify the refractive index of the at least one elongated waveguide when an electric field for generating a voltage is applied to the plurality of electrodes.

[0010] The present invention also addresses the above-mentioned inconveniences by providing a method for manufacturing a ferroelectric electro-optic modulator device according to claim 16.

[0011] Other advantageous features can be found in the dependent claims.

[0012] This innovation reduces electrical or RF losses in ferroelectric electro-optic modulator devices and enables the provision of photonic integrated modulators with ultra-low microwave losses and ultra-high bandwidth, marking a significant advancement in the field of electro-optic modulation technology.

[0013] Figures 2 to 4 An exemplary enhancement of device performance is shown by the ferroelectric electro-optic modulator device of this disclosure.

[0014] These and / or other aspects, features, and / or advantages will become apparent and more readily understood from the following description of various exemplary embodiments, taken in conjunction with the accompanying drawings illustrating some preferred embodiments. The thicknesses of layers / elements and the dimensions of parts / elements are not necessarily drawn to scale or actually to scale with each other, but are shown as examples. Throughout several views, the same reference numerals may refer to the same parts. Each embodiment herein may be used in combination with any other embodiment(s) described herein. Attached Figure Description

[0015] Figure 1AThis is a schematic cross-sectional view of an exemplary and preferred embodiment of a ferroelectric electro-optic modulator device of this disclosure, including at least one ridge waveguide or ridge-type waveguide. Note that the directions shown in the examples correspond to the crystal orientation of an exemplary x-cut ferroelectric material having a y-propagation waveguide, the crystal's X-axis being vertical, the Z-axis lying in the plane of the wafer or substrate, and the waveguide extending along the Y-axis. These directions are also used herein to indicate the spatial orientation and relative position of the elements of the ferroelectric electro-optic modulator device. It should also be noted that a z-cut ferroelectric material may be used alternatively; the exemplary x-cut is provided for illustrative purposes.

[0016] Figure 1B This is a perspective schematic diagram of an exemplary and preferred embodiment of a ferroelectric electro-optic modulator device of this disclosure, including at least one ridge waveguide or ridge-type waveguide. The arrows indicate exemplary directions in which an electric field is applied when a potential or voltage is applied to electrodes (e.g., a ground electrode and a modulation electrode to which a voltage or modulation potential signal is applied).

[0017] Figure 1C This is a cross-sectional schematic diagram of an exemplary and preferred embodiment of a ferroelectric electro-optic modulator device of the present disclosure, including at least one ridge waveguide or ridge-type waveguide, wherein the illustrated embodiment includes two ridge waveguides or ridge-type waveguides.

[0018] Figure 1D This is a perspective view of an exemplary and preferred embodiment of a ferroelectric electro-optic modulator device of the present disclosure, including at least one ridge waveguide or ridge-type waveguide, wherein the illustrated embodiment includes two ridge waveguides or ridge-type waveguides.

[0019] Figure 1E These are SEM cross-sectional SEM images of some of the exemplary materials constituting an exemplary ferroelectric electro-optic modulator device according to this disclosure.

[0020] Figure 1F and Figure 1G This is a cross-sectional schematic diagram of another exemplary ferroelectric electro-optic modulator device of this disclosure.

[0021] Figure 1H This is a top view schematic diagram of different exemplary waveguide and electrode layouts / configurations of the exemplary ferroelectric electro-optic modulator device of this disclosure.

[0022] Figures 1I to 1J This is a schematic diagram of another exemplary ferroelectric electro-optic modulator device of the present disclosure in other preferred embodiments including at least one ridge waveguide or ridge-type waveguide.

[0023] Figure 2 and Figure 3 The improved and reduced RF loss of the ferroelectric electro-optic modulator device of this disclosure is shown.

[0024] Figure 4The calculation of the electro-optic modulation bandwidth of the ferroelectric electro-optic modulator device of this disclosure is shown to be significantly enhanced.

[0025] Figure 5 The improved and reduced measured RF loss of the ferroelectric electro-optic modulator device of this disclosure is shown in devices exposed to and not exposed to plasma radiation (such as plasma radiation exposure that may occur during plasma etching of the ferroelectric layer or material).

[0026] Figure 6 It is similar to Figure 1A A schematic cross-sectional view of an exemplary embodiment of the ferroelectric electro-optic modulator device of the present disclosure is shown.

[0027] Figure 7 This is a schematic cross-sectional view of another exemplary embodiment of the ferroelectric electro-optic modulator device of this disclosure, wherein one or more electrodes are disposed or deposited on a supporting oxide material or layer, and no ferroelectric material or layer is located between the supporting oxide material or layer and the one or more electrodes. An adhesive layer or material may be present between the supporting oxide material or layer and the one or more electrodes.

[0028] Figure 8 This is a cross-sectional schematic diagram of another exemplary embodiment of the ferroelectric electro-optic modulator device disclosed herein, wherein one or more electrodes are disposed or deposited on a waveguide, the waveguide being covered with a cladding material or layer stacked on the waveguide or waveguide core.

[0029] In this document, the same reference numerals are used where possible to denote the same elements common in the figures. Detailed Implementation

[0030] The following detailed structural and / or functional descriptions (one or more) are provided as examples only and various changes and modifications can be made. The exemplary embodiments described herein do not limit this disclosure and should be understood to include all changes, equivalents, and substitutions within the scope of the ideas and techniques described herein. Certain examples will be described in detail below with reference to the accompanying drawings. When describing various exemplary embodiments with reference to the accompanying drawings, the same reference numerals may refer to the same parts, and repeated descriptions associated with them may be omitted.

[0031] This disclosure relates to a ferroelectric electro-optic modulator or a ferroelectric electro-optic modulator device 1.

[0032] Figures 1A to 1D and Figures 1F to 1J as well as Figures 6 to 8 An exemplary ferroelectric electro-optic modulator device 1 of the present disclosure is schematically shown.

[0033] Ferroelectric electro-optic modulator device 1 is, for example, a ferroelectric electro-optic modulator device integrated on a photonic chip.

[0034] Ferroelectric electro-optic modulator device 1 is, for example, a ferroelectric electro-optic modulator device that operates at room temperature.

[0035] Ferroelectric electro-optic modulator device 1 is, for example, a planar ferroelectric electro-optic modulator device.

[0036] The ferroelectric electro-optic modulator device 1 includes a plurality of stacked materials or layers, such as dielectric and / or semiconductor materials or layers. Coplanar metal electrodes are included, for example, stacked on dielectric and / or semiconductor materials or layers.

[0037] The ferroelectric electro-optic modulator device 1 includes, for example, at least one support substrate or layer 3, such as a silicon substrate or layer 3. The support substrate or layer 3 defines or extends to define a planar or planar structure or planar layer, said planar or planar structure or planar layer having a thickness in the x-direction or (generally) perpendicular to the elongated light propagation direction of the device 1 (see, for example...). Figure 1A ).

[0038] The supporting substrate or layer 3 is, for example, a single crystal or single-crystal silicon substrate or layer.

[0039] Substrate 3 can be, for example, a commercially available high-quality silicon wafer or substrate. Substrate or layer 3 typically has a thickness of, for example, 525 or 700 micrometers. Substrate or layer 3 is typically monocrystalline or single-crystalline silicon. <100> Furthermore, it can be polished on one or both sides. The silicon wafer or substrate 3 is, for example, a high resistivity Si substrate.

[0040] The ferroelectric electro-optic modulator device 1 includes, for example, at least one supporting oxide material or layer 5 disposed or deposited on a supporting substrate or layer 3. The supporting oxide material or layer 5 may include, for example, silicon dioxide (SiO2) or be composed of it. The supporting oxide material or layer 5 may have a thickness, for example, between 1 μm and 10 μm, such as 3 micrometers.

[0041] The ferroelectric electro-optic modulator device 1 advantageously includes at least one intermediate layer or material 7 disposed or located between the supporting oxide material or layer 5 and the supporting substrate or layer 3, or deposited between the supporting oxide material or layer 5 and the supporting silicon substrate or layer 3.

[0042] An intermediate layer or material 7 is disposed (directly) or deposited (directly) on the support substrate or layer 3 or on the surface 9 of the support substrate or layer 3. The support substrate or layer 3 includes or defines the surface 9.

[0043] The intermediate layer or material 7 comprises or is composed of at least one non-single-crystal material or layer 7. In a preferred exemplary embodiment, the intermediate layer or material 7 comprises or is composed of at least one non-single-crystal silicon material or layer 7.

[0044] The intermediate layer or material 7 includes, for example, at least one polycrystalline silicon layer or material 7 (or at least one polycrystalline silicon or polycrystalline silicon or polycrystalline silicon layer or material 7) or is composed thereof. The intermediate layer 7 may include at least one amorphous silicon layer or material 7 or is composed thereof.

[0045] In a preferred embodiment, the intermediate layer or material 7 directly contacts both the supporting oxide material or layer 5 and the supporting substrate or layer 3.

[0046] Intermediate layer 7 includes or defines a first surface or contact surface CS1 and a second surface or contact surface CS2 (see example...) Figure 6 The first contact surface CS1 is positioned relative to the second contact surface CS2, for example. The first contact surface CS1 directly contacts, for example, the surface 57 defined by or included by the supporting oxide material or layer 5. Figure 1A (The lower surface shown).

[0047] The second contact surface CS2 of the intermediate layer 7, for example, directly contacts the surface 9 of the supporting silicon substrate or layer 3. Figure 1A (The upper surface shown).

[0048] The polysilicon layer or material 7 may, for example, include or define a first contact surface CS1 that directly contacts the supporting oxide material or layer 5 and / or a second contact surface CS2 that directly contacts the supporting silicon substrate or layer 3. The first contact surface CS1 may, for example, consist of only silicon atoms. The second contact surface CS2 may, for example, consist of only silicon atoms.

[0049] The first contact surface CS1 may, for example, include at least one region or surface region composed solely of silicon atoms, or may include, for example, multiple regions or surface regions composed solely of silicon atoms. Each of the at least one region or multiple regions is a sub-region or sub-surface of the first contact surface CS1. The second contact surface CS2 may, for example, include at least one region or surface region composed solely of silicon atoms, or may include, for example, multiple regions or surface regions composed solely of silicon atoms. Each of the at least one region or multiple regions is a sub-region or sub-surface of the second contact surface CS2.

[0050] The amorphous silicon layer or material 7 may, for example, include or define a first contact surface CS1 that directly contacts the supporting oxide material or layer 5 and / or a second contact surface CS2 that directly contacts the supporting silicon substrate or layer 3. The first contact surface CS1 may, for example, consist of only silicon atoms. The second contact surface CS2 may, for example, consist of only silicon atoms.

[0051] The first contact surface CS1 may, for example, include at least one region or surface region composed solely of silicon atoms, or may include, for example, multiple regions or surface regions composed solely of silicon atoms. Each of the at least one region or multiple regions is a sub-region or sub-surface of the first contact surface CS1. The second contact surface CS2 may, for example, include at least one region or surface region composed solely of silicon atoms, or may include, for example, multiple regions or surface regions composed solely of silicon atoms. Each of the at least one region or multiple regions is a sub-region or sub-surface of the second contact surface CS2.

[0052] The intermediate layer or material 7 may have a thickness, for example, between 100 nm and 1000 nm, such as 400 nm.

[0053] The ferroelectric electro-optic modulator device 1 includes at least one ferroelectric material or layer 11 disposed or deposited on a supporting oxide material or layer 5. The ferroelectric material or layer 11 is disposed or deposited (and / or fixed / attached) on the supporting oxide material or layer 5, for example.

[0054] The ferroelectric material or layer 11 can be, for example, a non-etched or non-plasma-etched ferroelectric material or layer 11, such as a non-argon-etched or non-argon plasma-etched ferroelectric material or layer 11. The ferroelectric material or layer 11 can also be, for example, a ferroelectric material or layer 11 that is not exposed to plasma radiation, i.e., a ferroelectric material or layer 11 that has not yet been exposed to plasma radiation.

[0055] Alternatively, the ferroelectric material or layer 11 may be, for example, an etched or plasma-etched ferroelectric material or layer 11, such as an argon-etched or argon-plasma-etched ferroelectric material or layer 11. The ferroelectric material or layer 11 may be, for example, a ferroelectric material or layer 11 exposed to plasma radiation, i.e., a ferroelectric material or layer 11 that has been exposed to plasma radiation.

[0056] Figure 5 The improved and reduced measured RF loss of the ferroelectric electro-optic modulator device of this disclosure is shown in device 1, which is exposed to and not exposed to plasma radiation (such as plasma radiation exposure that may occur during plasma etching of the ferroelectric layer or material).

[0057] Ferroelectric materials or layers 11 are, for example, defining or defining a planar or flat waveguide layer or material.

[0058] Ferroelectric material or layer 11 forms / includes, defines, or defines at least one or more elongated optical waveguides 15. Ferroelectric material or layer 11 forms / includes, defines, or defines the waveguide core 17 of said or each elongated optical waveguide 15.

[0059] Ferroelectric material or layer 11 may, for example, form / include or define or limit the waveguide cladding or waveguide cladding structure / material 18 of said or each elongated optical waveguide 15, which (at least partially or completely) surrounds or encloses the waveguide core 17 (see, for example...). Figure 1F and Figure 1G ).

[0060] The elongated optical waveguide 15 and / or waveguide core 17 extend in an elongated direction (e.g., in the y-direction) and / or in an elongated plane (x-direction and z-direction) to guide or propagate light across the device 1 and / or across the ferroelectric material or layer 11. The light propagates or is guided, for example, in the plane of the ferroelectric material or layer 11.

[0061] Light is confined within the waveguide core 17 by at least one wall or lateral / transverse wall sw1, sw2 of the waveguide core 17, which extends elongatedly across the device 1 to propagate or guide light through the device 1.

[0062] The ferroelectric material or layer 11 and / or elongated optical waveguide 15 include, define or limit, for example, at least one or more waveguide cores 17 configured to guide light within the elongated waveguide cores and elongated optical waveguide 15 and through the ferroelectric material or layer 11.

[0063] Waveguide core 17 can be formed, for example, by structuring or processing the ferroelectric material or layer 11 to define an elongated core 17 located at or at a trench bank, (e.g., external) interface, or surface 21 of the ferroelectric material or layer 11, or extending therefrom at a distance (see example...). Figure 1A or Figure 1C ), and / or located within the ferroelectric material or layer 11 (see, for example) Figure 1F and Figure 1G ).

[0064] Each elongated core 17 includes or defines, for example, at least a first lateral interface or lateral surface LS1 for input light (e.g., extending in the x and z directions (generally) perpendicular to the surface 9 of the support substrate 3), and at least a second lateral interface or lateral surface LS2 for output light (e.g., extending in the x and z directions (generally) perpendicular to the surface 9 of the support substrate 3) (see example...). Figure 1H ).

[0065] In a preferred embodiment (see, for example) Figures 1A to 1DWaveguide 15 is either a defined ridge waveguide, or an elongated ridge waveguide, or a ridge waveguide structure, or an elongated ridge waveguide structure.

[0066] The slender waveguide core 17 is defined as either a ridge waveguide core 17 or a slender ridge waveguide core 17.

[0067] The waveguide core 17 of waveguide 15 may, for example, define elongated (ferroelectric) protrusions or (ferroelectric) ridges 50, which emerge from the ferroelectric material or layer 11 (see, for example...). Figure 1A ) or supporting oxide material or layer 5 (see, for example) Figure 7 The ridge 50 extends or protrudes from the base surface 21 or the first or base surface. The elongated ridge 50 includes at least a first sidewall sw1 and a second sidewall sw2, which extend from the base surface 21 to a surface 53 or upper surface or outer surface 53 that extends between the first and second sidewalls sw1, sw2.

[0068] As it extends from the base surface 21 to the surface 53, the first sidewall sw1 and the second sidewall sw2 may, for example, taper or extend inward, such as... Figure 1B and Figure 6 As shown in the image.

[0069] The waveguide core 17 of waveguide 15 can be formed, for example, by structuring the ferroelectric material or layer 11 to define elongated (ferroelectric) protrusions or (ferroelectric) ridges 50 extending or protruding from the first or substrate surface 21 of the ferroelectric material or layer 11 (see example). Figure 1A ).

[0070] Structured ferroelectric material or layer 11 to define elongated protrusions 19 can be accomplished, for example, by photolithography and etching of ferroelectric material or layer 11, as described, for example, in published international patent application WO2023 / 118926, the entire contents of which are incorporated herein by reference for all purposes.

[0071] Figure 1A and Figure 1B An embodiment including, for example, a waveguide 15 is shown, while Figure 1C and Figure 1D The embodiments shown include, for example, multiple or two waveguides 15.

[0072] Waveguide core 17, for example, Figure 1H In, for example Figure 1H The manner illustrated in (i) and (ii) extends through device 1.

[0073] In an alternative embodiment (not shown), the ferroelectric waveguide core 17 and / or waveguide 15 may be disposed or deposited as elongated strips on the supporting oxide material or layer 5, or alternatively disposed or deposited within elongated recesses or grooves on the supporting oxide material or layer 5.

[0074] The ferroelectric waveguide core 17 of waveguide 15 may, for example, be surrounded by air, where the surrounding air serves as the cladding shell (low refractive index shell) of waveguide 15.

[0075] Alternatively, a cladding material or layer (e.g., silicon dioxide, SiO2) may be disposed or deposited on the ferroelectric waveguide core 17 to surround or enclose the waveguide core 17. The waveguide 15 thus also includes such a surrounding cladding. At least one electrode 25 may be disposed or deposited on the cladding material or layer.

[0076] For example, one or more electrodes 25 may be absent (e.g., at least partially) covered with material or layers to allow electrical contact with the surfaces of one or more electrodes 25.

[0077] Figure 8 Another exemplary embodiment is shown, wherein a covering material or layer 55 (e.g., silicon dioxide SiO2) is disposed or deposited on a ferroelectric waveguide core 17 to surround or enclose the waveguide core 17, and at least one or more electrodes 25A, 25B are disposed or deposited on the covering material or layer 55, for example, on either side of the waveguide 17. At least one or more electrodes 25A, 25B are disposed or deposited, for example, on the surface or outer surface 56 of the covering material or layer 55.

[0078] In another embodiment, as classically known, the waveguide core 17 can be formed, for example, by diffusion of a dopant or dopant implantation (such as titanium) into the ferroelectric material or layer 11 to form a dopant or doped elongated strip 17 extending across the ferroelectric material or layer 11 (see example...). Figure 1F and Figure 1G ).

[0079] Figure 1H Exemplary and non-limiting embodiments of the waveguide 15 layout or configuration are shown. Waveguide 15 and / or waveguide core 17 may, for example, extend to divide into a first arm and a second arm, which are then recombined into a single elongated strip spanning or passing through the ferroelectric material or layer 11 (see, for example...). Figure 1H (i) and (iii)), that is, defining or forming, for example, an interference or Mach-Zehnder interference layout or configuration. Waveguide 15 and / or waveguide core 17 may, for example, extend as a single elongated strip across or through the ferroelectric material or layer 11 (see, for example...). Figure 1H (ii)).

[0080] Light is optically coupled to waveguide 15 or waveguide core 17 and guided or propagated across ferroelectric material or layer 11 or device 1.

[0081] At least one ferroelectric material or layer 11 may, for example, preferably comprise lithium niobate (LiNbO3), lithium tantalate (LiTaO3), or barium titanate (BaTiO3), or consist only of these.

[0082] At least one ferroelectric material or layer 11 may, for example, comprise single-crystal lithium niobate (LiNbO3), or doped lithium niobate (LiNbO3) or doped single-crystal lithium niobate (LiNbO3), or single-crystal lithium tantalate (LiTaO3), or doped lithium tantalate (LiTaO3) or doped single-crystal lithium tantalate (LiTaO3), or consist only of the like.

[0083] The ferroelectric material or layer 11 can have a thickness tf, for example, between 200 nm and 1200 nm, such as 600 nm. However, other thicknesses are also possible. The waveguide ridge thickness can be, for example, between 200 nm and 1000 nm, such as 300 nm. The waveguide ridge width can be, for example, between 300 nm and 2000 nm, such as 400 nm.

[0084] The thickness tf extends, for example, between the interface surface 23 and the surface 53 of the waveguide core 17 in a direction (substantially) perpendicular to the surface 9 of the support substrate or layer 3; or, for example, between the opposing interface surfaces of the waveguide core 17 in a direction (generally) perpendicular to the surface 9 of the support substrate or layer 3.

[0085] The ferroelectric electro-optic modulator device 1 may include, for example, a first interface or first surface 21 and a second interface or second (inner) surface 23 (see example...). Figure 1A The second interface or second (inner) surface 23 is in contact with the inner layer of the material of the device 1, such as the supporting oxide material or layer 5 (e.g., directly).

[0086] The ferroelectric material or layer 11 may, for example, include or define a first interface or a first surface 21 (see example...). Figure 1A Alternatively or additionally, the supporting oxide material or layer 5 may, for example, include or define a first interface or first surface 21 (see example...). Figure 7 ).

[0087] The first interface or first surface 21 and the second interface or second (inner) surface 23 may define, for example, the planar ends of the ferroelectric material or layer 11, which extends, for example, to define or define the planar layer or material 59 between the first interface or first surface 21 and the second interface or second (inner) surface 23.

[0088] In the embodiments, the ferroelectric material or layer 11 and / or planar layer or material 59 are absent or removed (partially or completely), and at least one or more electrodes 25A, 25B are, for example, directly disposed or deposited on the supporting oxide material or layer 5 (see, for example...). Figure 7There is no ferroelectric material or layer 11 between at least one or more electrodes 25A, 25B and the supporting oxide material or layer 5. The supporting oxide material or layer 5 may, for example, include or define both a first interface or a first surface 21 and a second interface or a second (inner) surface 23. One or more electrodes 25 are in contact with the ferroelectric material or layer 11 indirectly, for example, via the supporting oxide material or layer 5. One or more electrodes 25 are in operatively contacted with the ferroelectric material or layer 11, for example.

[0089] The first interface or first surface 21 may, for example, receive or be positioned as at least one or more (operating) electrodes 25 of the receiving device 1. One or more electrodes 25 may, for example, be in physical and / or operably in contact with the ferroelectric material or layer 11 and / or the first interface or first surface 21 of the ferroelectric material or layer 11 or the supporting oxide material or layer 5 (and / or the covering material or layer, if any).

[0090] One or more electrodes 25 are disposed or deposited in direct contact with a surface (e.g., surface 21) on which one or more electrodes 25 are disposed or deposited, and / or indirect contact with a surface (e.g., surface 21) on which one or more electrodes 25 are disposed or deposited, wherein an intermediate layer or material (including, for example, Ti and / or Al or composed thereof, having a thickness of, for example, between 5 nm and 20 nm, such as 10 nm) is disposed between one or more electrodes 25 and the surface (e.g., surface 21). The intermediate layer or material forms, for example, an adhesive layer.

[0091] Ferroelectric electro-optic modulator device 1 includes, for example, at least one or more electrodes 25, which are, for example, associated with a ferroelectric material or layer 11 (see example...). Figure 1A ), supporting oxide material or layer 5 (see example) Figure 7 ) or covering material or layer 55 (see example) Figure 8 )touch.

[0092] Device 1 includes, for example, at least a first electrode 25A and at least a second electrode 25B. The electrodes 25 may be positioned or disposed, for example, coplanar with respect to each other. The electrodes 25 may be positioned or disposed, for example, coplanar with respect to each other on a ferroelectric material or layer 11 (see, for example...). Figure 1A That is, the electrode 25 is placed, positioned, or extended in the same plane or electrode plane pl (e.g., extending in the y and z directions).

[0093] The electrode, or each electrode 25, is positioned, for example, in contact with the ferroelectric material or layer 11. The electrode, or each electrode 25, has a thickness t (in a direction extending, for example, in the x-direction (generally) perpendicular to the surface 9 of the supporting substrate 3). The thickness t can be, for example, between 300 nm and 1000 nm, such as 800 nm. However, other thicknesses are also possible. The electrode, or each electrode 25, can be deposited, for example, by electron beam evaporation.

[0094] Each electrode 25 includes a first interface or first surface 27 and a second interface or second (inner) surface 29, which define the end or planar end of the electrode 25 or each electrode 25.

[0095] Electrode material or layer 25 extends to define or define, for example, a planar layer / material or structure between a first interface or first surface 27 and a second interface or second (inner) surface 29. The planar layers / materials or structures of electrodes 25, 25A, 25B, or each of electrodes 25, 25A, 25B, overlap to be coplanar, i.e., they operate in the same plane or electrode plane p1 or in the same plane p1.

[0096] The first surface 27 of at least one or more electrodes 25 may define, for example, an externally exposed voltage contact surface to which an operating voltage for device operation is applied, such as a modulation potential V or a ground potential or voltage. A gap may exist above, opposite to, or facing the externally exposed voltage contact surface to allow the formation of voltage terminals or contacts to apply the operating voltage thereto.

[0097] Electrode 25 defines, for example, the arrangement or configuration of coplanar waveguides (CPWs).

[0098] Each electrode 25 may be separated from another or adjacent electrode, for example, by a gap 31 that defines a gap between the electrodes (e.g., no electrode gap). For example, the first electrode 25A is separated from the second electrode 25 by a gap 31 of width wg, which defines a gap between the first and second electrodes 25A, 25B.

[0099] For example, the width wg of the gap can be equal to or at least equal to the width wel of one or more electrodes. The width wel of one or more electrodes can be, for example, three times (3x) the width wg of the gap (wel = 3 × wg). The actual width implemented depends, of course, on the device and on the desired operating characteristics of the device.

[0100] exist Figures 1A to 1D In an exemplary embodiment, the gap 31 or clearance includes or contains a ridge waveguide 15 and / or a waveguide core 17, which is located, for example, within the gap and between, for example, two electrodes 25. In some embodiments, the gap 31 or clearance may contain a covering material, or a covering material stacked on the waveguide core 17 (see, for example...). Figure 8 ).

[0101] The first sidewall sw1 of waveguide core 17 (or each waveguide core 17) may be positioned, for example, facing or relative to the sidewall SD1 of the first electrode 25, and the second sidewall sw2 of waveguide core 17 may be positioned facing or relative to the sidewall SD2 of the second and different electrode 25.

[0102] In an embodiment (not shown), at least one electrode 25 may be disposed or deposited, for example, on the surface or outer surface 53 of the waveguide 15. This is, for example, in addition to at least one or more lateral electrodes.

[0103] Electrode 25 is configured to apply a modulated electric field and is arranged or disposed on, for example, the same surface 21 (e.g., of ferroelectric material or layer 11 or supporting oxide material or layer 5), and / or extends, for example, from the same surface 21 (e.g., of ferroelectric material or layer 11 or supporting oxide material or layer 5).

[0104] The electrode or multiple electrodes 25 are configured, arranged, or operatively positioned to generate an electric field within at least one ferroelectric material or layer 11 and / or waveguide core 17, for example, when a voltage or voltage signal is applied to the electrode 25, to modify the refractive index of the ferroelectric material or layer 11 and / or waveguide core 17.

[0105] The first electrode 25A is grounded, for example (e.g., a grounded electrode to which a reference potential or voltage is applied), and a voltage or voltage signal is applied to the second electrode 25B (a hot electrode electrically connected to the modulation potential V). A third electrode (or another electrode) may also be present, and may also be grounded, for example (e.g., a second grounded electrode).

[0106] The electrodes are arranged or configured to allow operation of device 1, for example, up to the microwave region of the spectrum of the modulated electric field.

[0107] Electrode 25 is, for example, an elongated electrode that may extend, for example, in a planar manner across device 1 or ferroelectric material or layer 11 (its surface). Figure 1H Non-limiting exemplary layouts or configurations are shown.

[0108] Electrode 25 may be located laterally on each side of waveguide cores 17, 17B, and may not directly overlap or be directly stacked on or above waveguide core 17 or waveguide 15. The first and second electrodes may be located on either side of the waveguide core and extend (generally) parallel to or with waveguide core 17, such as, for example... Figure 1H As shown in (i) and (ii).

[0109] Alternatively or additionally, electrode 25 or at least one electrode may be directly overlapped or stacked on or above waveguide core 17, such as, for example Figure 1H As shown in (iii). Other layouts or configurations are of course also possible.

[0110] Electrode 25 may be deposited or disposed, for example, directly on the ferroelectric material or layer 11 or its surface 21 (or on the coating material or layer (if any), or on the supporting oxide material or layer 5).

[0111] At least one or more electrodes 25 or all electrodes 25 advantageously comprise or consist of at least one metal, or at least one or more electrodes 25 or all electrodes 25 are metallic electrodes.

[0112] At least one or more electrodes, or all electrodes 25, comprise or consist of a non-superconducting material.

[0113] At least one or more electrodes, or all electrodes 25, may advantageously comprise or be composed of silver (Ag). As described above, the thickness t may be, for example, between 300 nm and 1000 nm, such as 800 nm. However, other thicknesses are possible. The electrodes, or each electrode 25, may be deposited, for example, by electron beam evaporation. At least one of the plurality of electrodes, or all or each of the electrodes 25, comprises or is composed of silver (Ag).

[0114] Alternatively or additionally, at least one or more electrodes 25 may include or be composed of gold (Au).

[0115] The electrode may optionally include, for example, a thin adhesive or intermediate layer or material (e.g., aluminum or titanium) disposed between the electrode 25 and the surface of the ferroelectric material or layer 11. The adhesive or intermediate layer or material may be, for example, 10 nm thick and deposited on, for example, the ferroelectric material or layer 11, the supporting oxide material or layer 5, or the coating material or layer before the electrode body is disposed or deposited onto the adhesive or intermediate layer. Thus, the electrode 25 may include or be composed of an adhesive or intermediate layer or material (directly) deposited or disposed on the ferroelectric material or layer 11, the supporting oxide material or layer 5, or the coating material or layer (surface 21), and the electrode body is deposited or disposed thereon, preferably comprising or composed of silver or gold; or gold and silver.

[0116] Electrode 25 is configured and / or arranged to generate an electric field within waveguide core 17, 17B when a voltage or voltage signal difference is applied to electrode(s) 25, to, for example, modify the refractive index of waveguide core 17.

[0117] Multiple electrodes 25 are configured to generate an electric field within the ferroelectric material or layer 11, for example, when an electric field for generating voltage is applied to multiple coplanar electrodes 25, to modify the refractive index of the elongated waveguide 15.

[0118] This allows for electrical manipulation or control of the amplitude, phase, or polarization state of the beam propagating through waveguide core 17. Device 1 is used to modulate the beam propagating through waveguide 15, wherein modulation is applied to the phase, frequency, amplitude, or polarization of the beam by an electrical signal applied to electrode 25.

[0119] In another embodiment of this disclosure, the ferroelectric electro-optic modulator device 1 does not necessarily include an intermediate layer or material 7, and may optionally include an intermediate layer or material 7. In this embodiment, the device is the same as the previously described device, and at least one or more electrodes or all electrodes 25 advantageously comprise silver (Ag) or are composed of it. The electrodes may optionally comprise, for example, a thin adhesive or intermediate layer or material (e.g., aluminum or Ti), on which the electrode body is deposited or disposed, and the electrode body preferably comprises silver or gold and silver or is composed of it.

[0120] The supporting oxide material or layer 5 is disposed or deposited (e.g., directly) on the supporting substrate or layer 3, and there is no previously described intermediate layer or material 7 between the supporting oxide material or layer 5 and the supporting substrate or layer 3.

[0121] The ferroelectric electro-optic modulator device includes, for example, at least one support substrate or layer 3; at least one support oxide material or layer 5 disposed or deposited on the silicon substrate or layer 3 (e.g., directly); at least one ferroelectric material or layer 11 disposed or deposited on the at least one support oxide material or layer 5, the at least one ferroelectric material or layer 11 including or defining at least one elongated waveguide 15 and / or waveguide core 17 configured to guide light through the at least one ferroelectric material or layer 11 within the elongated waveguide core 17; and at least one or more electrodes 25 in contact with the at least one ferroelectric material or layer 11.

[0122] The plurality of electrodes 25 are configured, for example, to generate an electric field within the ferroelectric material or layer 11 to modify the refractive index of the ferroelectric material or layer 11 when an electric field for generating a voltage is applied to the plurality of coplanar electrodes 25. The plurality of electrodes 25 are configured, for example, to generate an electric field within the ferroelectric material or layer 11 to modify the refractive index of the ferroelectric material or layer 11 when a voltage or voltage difference is applied to (one or more) electrodes 25.

[0123] Figure 1I and Figure 1J An exemplary device is shown, in which the ferroelectric electro-optic modulator device 1 does not necessarily include an intermediate layer or material 7. This is similar to that not shown. Figures 1F to 1G The case of the embodiment.

[0124] This disclosure also relates to a method for manufacturing a ferroelectric electro-optic modulator device.

[0125] The method includes, for example, providing at least one supporting silicon substrate or layer 3, setting or depositing at least one intermediate layer 7 comprising at least one polycrystalline silicon layer or material 7 or an amorphous silicon layer or material or composed thereof on at least one silicon substrate or layer 3, setting or depositing at least one supporting oxide material or layer 5 on at least one polycrystalline silicon layer or material 7 or an amorphous silicon layer or material, forming at least one elongated waveguide 15 in or on at least one ferroelectric material or layer 11 to allow light to be guided through the ferroelectric electro-optic modulator device 1, and setting or depositing a plurality of metal electrodes 25 on or in contact with at least one ferroelectric material or layer 11.

[0126] The following provides an exemplary manufacturing process / method for fabricating / depositing an apparatus comprising a silicon Si substrate (3), a polycrystalline silicon (or a-Si) intermediate layer 7, a SiO2 support layer 5, and a ferroelectric LiNbO3 layer 11, wherein a structural silver electrode 25 having an exemplary thickness of (about) 800 nm is deposited thereon by electron beam evaporation. Other manufacturing processes or methods for apparatus 1 are possible.

[0127] The process begins with a clean silicon (Si) wafer 3, which serves as the base substrate for subsequent layer deposition.

[0128] A polycrystalline silicon (polySi) layer 7 can be deposited onto a silicon wafer using plasma-enhanced chemical vapor deposition (PECVD). This technique allows for precise control over the thickness and uniformity of the polycrystalline silicon layer.

[0129] Alternatively, amorphous silicon a-Si can be deposited by LPCVD and used as an intermediate layer 7. The amorphous silicon a-Si can be rapidly annealed, which activates the transformation of amorphous silicon a-Si to polycrystalline (polySi).

[0130] Alternatively, the surface of the amorphous silicon a-Si or polycrystalline silicon layer 7 can be polished and planarized (e.g., via chemical mechanical planarization).

[0131] Silicon dioxide (SiO2) can then be deposited, for example, on top of the polycrystalline silicon layer 7. This can be achieved by plasma-enhanced chemical vapor deposition (PECVD) to ensure a conformal coating on the polycrystalline silicon layer 7.

[0132] Alternatively, physical vapor deposition (PVD) or wafer bonding of SiO2 to the polycrystalline silicon layer 7 can be used. The SiO2 layer 5 can be supported on a silicon carrier or substrate, which can then be removed using mechanical polishing techniques, and the Si material can be removed more finely by dry etching (using, for example, fluorine chemistry). The use of wafer bonding and polishing techniques has been shown to provide a high-quality SiO2 layer 5 on the surface of the polycrystalline silicon layer.

[0133] A lithium niobate (LiNbO3) layer 11 is provided using a proven and known smart-cutting technique, and then the wafer is bonded to a SiO2 layer 5 and transferred from another bulk lithium niobate wafer. (See, for example, https: / / www.soitec.com / en / products / smart-cut).

[0134] This method allows for the fabrication of a 600 nm thin, high-quality LiNbO3 layer 11 on top of the SiO2 layer 5, thereby ensuring optimal optical properties for applications requiring electro-optic modulation.

[0135] Silver electrode 25 is deposited on LiNbO3 layer 11 and the resulting structure by electron beam evaporation, and silver electrode 25 has an exemplary thickness of (about) 800 nm.

[0136] The inventors have surprisingly discovered that the device 1 of this disclosure, including the intermediate layer or material 7, enhances modulator performance. The inventors have also surprisingly discovered that the device 1 of this disclosure, including the polycrystalline silicon intermediate layer or material 7 disposed on a single crystal or single-crystal silicon substrate or layer 3, enhances modulator performance by exhibiting lower loss characteristics, such as… Figure 2 Comparative measurements show that a device including the intermediate layer or material 7 is compared to a device without the intermediate layer or material 7. Compared to the same device without the intermediate layer or material 7, the RF loss is reduced by 2 dB / cm at 60 GHz. The device 1 of this disclosure ensures lower RF loss. Unbound from any particular theory, variations in crystallinity from monocrystalline to polycrystalline or amorphous appear to play a role in the resulting lower RF loss of the device. This enhancement is achieved regardless of the electrode material, i.e., whether silver or gold electrodes are used.

[0137] Furthermore, the inventors surprisingly discovered that the use of silver electrodes reduces ohmic losses by up to 30% compared to conventionally used Au, which is used due to its stability and conductivity, and also ensures a significant efficiency improvement. Conventional integrated electro-optic modulators typically use gold (Au). The inventors' results demonstrate that replacing gold with silver, while maintaining other aspects of the device design, ensures a 30% reduction in losses (see, for example...). Figure 3 In addition to what was previously discussed and Figure 2 In addition to the enhanced modulator performance presented in the report, this improvement was also achieved.

[0138] These innovations offer significant improvements over existing devices and mark a remarkable advancement in electro-optic modulation technology.

[0139] The intermediate layer or material 7 is surprisingly effective and is achieved through direct structural modifications to the electro-optic modulator design.

[0140] Furthermore, the use of silver to reduce ohmic losses by up to 30% challenges conventional material selection, thus providing a cost-effective and efficient alternative. To date, this material has not been used in integrated photonics-based modulators. The shift to silver involved meticulous experimentation and analysis by the inventors to ensure that the benefits of conductivity did not introduce other problems, such as increased susceptibility to corrosion or processing difficulties.

[0141] These findings offer new solutions that do not contradict existing literature, but rather bridge gaps and propose novel solutions for enhancing the performance of integrated electro-optic modulators.

[0142] This breakthrough significantly reduced device losses, decreasing overall losses by 60%. This paves the way for photonic integrated modulators with ultra-low microwave losses.

[0143] like Figure 4 As shown, the combination of the intermediate layer or material 7 with the silver electrode results in a significant enhancement of the electro-optic modulation bandwidth—an increase of 200%, raising it from 22.5 GHz to a significant value of 100 GHz. Figure 4 The enhancement obtained by including an intermediate layer or material 7 is also shown. This is evident when comparing the results of a device including a polycrystalline silicon layer and an Au electrode with those of a device including a non-polycrystalline silicon layer and an Au electrode.

[0144] While the invention has been disclosed with reference to certain preferred embodiments, many modifications, alterations, and variations of the described embodiments and their equivalents are possible without departing from the scope and meaning of the invention. Therefore, the invention is not limited to the described embodiments, but is given the broadest reasonable interpretation in accordance with the language of the appended claims. Features of any of the foregoing embodiments may be included in any other embodiments described herein.

Claims

1. A ferroelectric electro-optic modulator device (1), comprising: At least one supporting substrate or layer (3), wherein the at least one supporting substrate or layer (3) comprises or is composed of a single crystal or single-crystal silicon substrate or layer (3), At least one supporting oxide material or layer (5) disposed or deposited on the silicon substrate or layer (3). At least one ferroelectric material or layer (11) disposed or deposited on the at least one supporting oxide material or layer (5), wherein the at least one ferroelectric material or layer (11) includes or defines at least one elongated waveguide core (17) of at least one elongated waveguide (15), the at least one elongated waveguide core (17) being configured to guide light within the at least one elongated waveguide (15) and through the at least one ferroelectric material or layer (11). At least one intermediate layer (7), the at least one intermediate layer comprising or consisting of at least one polysilicon layer or material (7) disposed or deposited between the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), wherein the at least one intermediate layer (7) directly contacts the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), and The plurality of metal electrodes (25) comprising gold or silver are disposed on and in contact with the at least one ferroelectric material or layer (11), the plurality of metal electrodes (25) being configured to generate an electric field within the at least one ferroelectric material or layer (11) to modify the refractive index of the at least one elongated waveguide (15) when an electric field for generating a voltage is applied to the plurality of electrodes (25).

2. The ferroelectric electro-optic modulator device (1) according to the preceding claim, wherein, At least one of the plurality of electrodes (25) comprises or is composed of silver, or each of the plurality of electrodes (25) comprises or is composed of silver.

3. The ferroelectric electro-optic modulator device (1) according to claim 1 or 2, wherein, The at least one elongated waveguide core (17) defines an elongated ridge waveguide core (17) or an elongated ridge waveguide core (17).

4. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The plurality of electrodes are coplanar metal electrodes (25) extending from the at least one ferroelectric material or layer (11), and the device 1 is a coplanar waveguide device.

5. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, At least one of the plurality of electrodes (25) or each of the plurality of electrodes (25) includes an externally exposed voltage contact surface (27) and a gap positioned facing the externally exposed voltage contact surface (27), thereby allowing the formation of a voltage terminal or contact on the externally exposed voltage contact surface (27) for applying a device operating voltage to the externally exposed voltage contact surface (27).

6. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The at least one polysilicon layer or material (7) is in direct contact with the at least one supporting oxide material or layer (5) and the at least one silicon substrate or layer (3).

7. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The at least one ferroelectric material or layer (11) is a non-plasma-etched ferroelectric material or layer (11).

8. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The ferroelectric electro-optic modulator device (1) is a ferroelectric electro-optic modulator device (1) that operates at room temperature.

9. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The at least one ferroelectric material or layer (11) comprises or consists only of the following: lithium niobate (LiNbO3), or single-crystal lithium niobate (LiNbO3), or doped lithium niobate (LiNbO3) or doped single-crystal lithium niobate (LiNbO3), or lithium tantalate (LiTaO3) or single-crystal lithium tantalate (LiTaO3), or doped lithium tantalate (LiTaO3) or doped single-crystal lithium tantalate (LiTaO3) or barium titanate (BaTiO3).

10. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The at least one supporting oxide material or layer (5) includes or is composed of silicon oxide.

11. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The ferroelectric electro-optic modulator device is a photonic chip-integrated ferroelectric electro-optic modulator device.

12. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The at least one polycrystalline silicon layer or material (7) includes at least one contact surface (CS1, CS2) that directly contacts the at least one supporting oxide material or layer (5) and / or directly contacts the at least one supporting silicon substrate or layer (3), wherein the at least one contact surface (CS1, CS2) is composed of only silicon atoms.

13. The ferroelectric electro-optic modulator device (1) according to the preceding claim, wherein, The at least one contact surface (CS1, CS2) includes at least one region consisting only of silicon atoms or includes multiple regions consisting only of silicon atoms, each of the at least one region or the multiple regions being a sub-region of the at least one contact surface (CS1, CS2).

14. The ferroelectric electro-optic modulator device (1) according to any one of the preceding claims, wherein, The plurality of metal electrodes (25) are directly disposed on the at least one ferroelectric material or layer (11) and are in direct contact with the at least one ferroelectric material or layer (11).

15. The ferroelectric electro-optic modulator device (1) according to any one of claims 1 to 13, wherein, The plurality of metal electrodes (25) are indirectly disposed on and in contact with the at least one ferroelectric material or layer (11), wherein the ferroelectric electro-optic modulator device (1) includes at least one protective coating layer or material (55) located between the at least one ferroelectric material or layer (11) and the plurality of metal electrodes (25).

16. A method for manufacturing a ferroelectric electro-optic modulator device, comprising: At least one supporting substrate or layer (3) is provided, wherein the at least one supporting silicon substrate or layer (3) is a single crystal or a single-crystal silicon substrate or layer (3). A polysilicon layer or material (7) or an intermediate layer (7) consisting of at least one polysilicon layer or material (7) is disposed or deposited directly on the at least one silicon substrate or layer (3). At least one supporting oxide material or layer (5) is disposed or deposited directly on the at least one polycrystalline silicon layer or material (7), and At least one elongated waveguide (15) comprising at least one elongated waveguide core (17) is formed in or on the at least one ferroelectric material or layer (11) to allow light to be guided through the ferroelectric electro-optic modulator device (1), and Multiple metal electrodes (25) including silver or gold are disposed or deposited on the at least one ferroelectric material or layer (11) and in contact with the at least one ferroelectric material or layer (11).

17. The method according to the preceding claim, wherein, The at least one supporting oxide material or layer (5) is disposed or deposited to directly contact the at least one intermediate layer (7).

18. The method according to any one of claims 16 to 17, wherein, The at least one polysilicon layer or material (7) is disposed or deposited to directly contact the at least one silicon substrate or layer (3).

19. The method according to any one of claims 16 to 18, wherein, At least one of the electrodes (25) or each of the plurality of electrodes (25) comprises or is composed of silver.

20. The method according to any one of claims 16 to 19, wherein, The at least one ferroelectric material or layer (11) comprises or consists only of the following: lithium niobate (LiNbO3), or single-crystal lithium niobate (LiNbO3), or doped lithium niobate (LiNbO3) or doped single-crystal lithium niobate (LiNbO3), or lithium tantalate (LiTaO3) or single-crystal lithium tantalate (LiTaO3), or doped lithium tantalate (LiTaO3) or doped single-crystal lithium tantalate (LiTaO3) or barium titanate (BaTiO3).

21. The method according to any one of claims 16 to 20, wherein, The at least one polycrystalline silicon layer or material (7) includes at least one contact surface (CS1, CS2) that directly contacts the at least one supporting oxide material or layer (5) and / or directly contacts the at least one supporting silicon substrate or layer (3), wherein the at least one contact surface (CS1, CS2) is composed of only silicon atoms.

22. The method according to the preceding claim, wherein, The at least one contact surface (CS1, CS2) includes at least one region consisting only of silicon atoms or includes multiple regions consisting only of silicon atoms, each of the at least one region or the multiple regions being a sub-region of the at least one contact surface (CS1, CS2).

23. The method according to any one of claims 16 to 22, wherein, The plurality of metal electrodes (25) are directly disposed or deposited on the at least one ferroelectric material or layer (11) and are in direct contact with the at least one ferroelectric material or layer (11).

24. The method according to any one of claims 16 to 22, wherein, The plurality of metal electrodes (25) are indirectly disposed or deposited on the at least one ferroelectric material or layer (11) and are in indirect contact with the at least one ferroelectric material or layer (11), wherein the ferroelectric electro-optic modulator device (1) includes at least one protective coating layer or material (55) located between the at least one ferroelectric material or layer (11) and the plurality of metal electrodes (25).

25. A ferroelectric electro-optic modulator device (1), comprising: At least one supporting substrate or layer (3), wherein the at least one supporting substrate or layer (3) comprises or is composed of a single crystal or single-crystal silicon substrate or layer (3), At least one supporting oxide material or layer (5) disposed or deposited on the silicon substrate or layer (3). At least one ferroelectric material or layer (11) disposed or deposited on the at least one supporting oxide material or layer (5), wherein the at least one ferroelectric material or layer (11) includes or defines at least one elongated waveguide core (17) of at least one elongated waveguide (15), the at least one elongated waveguide core (17) being configured to guide light within the at least one elongated waveguide (15) and through the at least one ferroelectric material or layer (11). At least one intermediate layer (7), the at least one intermediate layer comprising or consisting of at least one polysilicon layer or material (7) disposed or deposited between the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), wherein the at least one intermediate layer (7) directly contacts the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), and The plurality of metal electrodes (25) comprising silver are disposed on and in contact with the at least one ferroelectric material or layer (11), the plurality of metal electrodes (25) being configured to generate an electric field within the at least one ferroelectric material or layer (11) to modify the refractive index of the at least one elongated waveguide (15) when an electric field for generating a voltage is applied to the plurality of electrodes (25).

26. A ferroelectric electro-optic modulator device (1), comprising: At least one supporting substrate or layer (3), wherein the at least one supporting substrate or layer (3) comprises or is composed of a single crystal or single-crystal silicon substrate or layer (3), At least one supporting oxide material or layer (5) disposed or deposited on the silicon substrate or layer (3). At least one ferroelectric material or layer (11) disposed or deposited on the at least one supporting oxide material or layer (5), wherein the at least one ferroelectric material or layer (11) includes or defines at least one elongated waveguide core (17) of at least one elongated waveguide (15), the at least one elongated waveguide core (17) being configured to guide light within the at least one elongated waveguide (15) and through the at least one ferroelectric material or layer (11). At least one intermediate layer (7), the at least one intermediate layer comprising or consisting of at least one amorphous silicon layer or material (7) disposed or deposited between the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), wherein the at least one intermediate layer (7) directly contacts the at least one supporting oxide material or layer (5) and the at least one supporting silicon substrate or layer (3), and The plurality of metal electrodes (25) comprising silver are disposed on and in contact with the at least one ferroelectric material or layer (11), the plurality of metal electrodes (25) being configured to generate an electric field within the at least one ferroelectric material or layer (11) to modify the refractive index of the at least one elongated waveguide (15) when an electric field for generating a voltage is applied to the plurality of electrodes (25).

27. The ferroelectric electro-optic modulator device (1) according to claim 25 or 26, wherein, The at least one amorphous layer or material (7) includes at least one contact surface (CS1, CS2) that directly contacts the at least one supporting oxide material or layer (5) and / or directly contacts the at least one supporting silicon substrate or layer (3), wherein the at least one contact surface (CS1, CS2) is composed of only silicon atoms.

28. The ferroelectric electro-optic modulator device (1) according to the preceding claim, wherein, The at least one contact surface (CS1, CS2) includes at least one region consisting only of silicon atoms or includes multiple regions consisting only of silicon atoms, each of the at least one region or the multiple regions being a sub-region of the at least one contact surface (CS1, CS2).

29. The ferroelectric electro-optic modulator device (1) according to any one of claims 25 to 28, wherein, The plurality of metal electrodes (25) are directly disposed or deposited on the at least one ferroelectric material or layer (11) and are in direct contact with the at least one ferroelectric material or layer (11).

30. The ferroelectric electro-optic modulator device (1) according to any one of claims 25 to 28, wherein, The plurality of metal electrodes (25) are indirectly disposed or deposited on the at least one ferroelectric material or layer (11) and are in indirect contact with the at least one ferroelectric material or layer (11), wherein the ferroelectric electro-optic modulator device (1) includes at least one protective coating layer or material (55) located between the at least one ferroelectric material or layer (11) and the plurality of metal electrodes (25).

31. A method for manufacturing a ferroelectric electro-optic modulator device, comprising: At least one supporting substrate or layer (3) is provided, wherein the at least one supporting silicon substrate or layer (3) is a single crystal or a single-crystal silicon substrate or layer (3). At least one intermediate layer (7) is disposed or deposited directly on the at least one silicon substrate or layer (3), the at least one intermediate layer comprising or consisting of at least one polysilicon layer or material (7), At least one supporting oxide material or layer (5) is disposed or deposited directly on the at least one polycrystalline silicon layer or material (7), and At least one elongated waveguide (15) comprising at least one elongated waveguide core (17) is formed in or on the at least one ferroelectric material or layer (11) to allow light to be guided through the ferroelectric electro-optic modulator device (1), and Multiple metal electrodes (25) including silver are disposed or deposited on the at least one ferroelectric material or layer (11) and in contact with the at least one ferroelectric material or layer (11).

32. A method for manufacturing a ferroelectric electro-optic modulator device, comprising: At least one supporting substrate or layer (3) is provided, wherein the at least one supporting silicon substrate or layer (3) is a single crystal or a single-crystal silicon substrate or layer (3). At least one intermediate layer (7) is disposed or deposited directly on the at least one silicon substrate or layer (3), the at least one intermediate layer comprising or consisting of at least one amorphous silicon layer or material (7), At least one supporting oxide material or layer (5) is disposed or deposited directly on the at least one amorphous layer or material (7), and At least one elongated waveguide (15) comprising at least one elongated waveguide core (17) is formed in or on the at least one ferroelectric material or layer (11) to allow light to be guided through the ferroelectric electro-optic modulator device (1), and Multiple metal electrodes (25) including silver are disposed or deposited on the at least one ferroelectric material or layer (11) and in contact with the at least one ferroelectric material or layer (11).

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