A large aperture solid phase sintered silicon carbide (S-SiC) substrate mirror surface modification layer and a preparation method thereof

By introducing a SiOx transition layer between the SiC substrate and the Si modified layer, the problem of poor bonding of the modified layer on the surface of large-aperture SiC substrate mirrors was solved, and the preparation of modified layers with high bonding strength and low stress was achieved, meeting the high precision requirements of space optics.

CN123058103BUndetermined Publication Date: 2022-10-21SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN201818002014.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2018-05-14
Publication Date
2022-10-21
Estimated Expiration
2038-05-14

AI Technical Summary

Technical Problem

The surface modification layer of large-aperture SiC substrate mirrors is damaged due to excessive stress and weak bonding, making it difficult to meet the high precision requirements of space optics applications.

Method used

A SiOx (x=0.7~1.4) transition layer is introduced between the SiC substrate and the Si modified layer. The layer is prepared by the PIAD method to improve the wettability and adhesion between the film and the substrate, avoid island growth, and form a uniform and dense Si modified layer.

Benefits of technology

This improved the bonding strength between the film layer and the SiC ceramic substrate, reduced residual stress, and enhanced the bonding strength of the surface modification layer of the large-aperture SiC substrate mirror, thus meeting the high-precision requirements of space optics.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN123058103B_ABST
    Figure CN123058103B_ABST
Patent Text Reader

Abstract

This invention belongs to the technical field of coating ultra-thick and dense modified layers on the surface of ceramic materials. Specifically, it is a surface modified layer for a large-diameter solid-state sintered silicon carbide (S-SiC) substrate mirror and its preparation method, which solves the problem of film damage due to weak bonding during the preparation of surface modified layers for large-diameter SiC substrate mirrors. The method includes the following steps: (1) growing a silicon oxide SiOx (x = 0.7~1.4) transition layer on the surface of a SiC ceramic substrate by high-energy plasma-assisted bombardment on an electron beam evaporation vacuum coating machine equipped with an advanced plasma source (APS); (2) growing a silicon (Si) modified layer above the SiOx (x = 0.7~1.4) transition layer by high-energy plasma-assisted bombardment. The substrate is polished solid-state sintered silicon carbide ceramic, and the film is a silicon film. A significant feature of this invention is that by introducing a SiOx (x = 0.7–1.4) transition layer, the film layer exhibits good wettability and strong film-substrate adhesion to the substrate, solving the problem of damage to the surface modification layer of large-diameter solid-state sintered SiC substrate mirrors due to weak adhesion. Another significant feature is that the SiOx (x = 0.7–1.4) transition layer is prepared by plasma-assisted electron beam evaporation (PIAD). The Si modification layer grown above the SiOx (x = 0.7–1.4) transition layer greatly improves the polishing characteristics of the SiC substrate and enhances the optical quality of the substrate surface after polishing, providing strong support for the space application of SiC substrate mirrors.
Need to check novelty before this filing date? Find Prior Art