Semiconductor structure

Abstract

The utility model discloses a semiconductor structure, which belongs to the technical field of semiconductors, and at least comprises a substrate; the multiple first active regions are arranged on the substrate in parallel, and a shallow trench isolation structure is arranged between every two adjacent first active regions; the second active regions are arranged at the two ends of the first active region and are in contact with the first active region; the plurality of polycrystalline silicon structures are arranged on the first active region in parallel and stretch across the plurality of first active regions, and a preset distance is arranged between the adjacent polycrystalline silicon structures; the detection contact hole is formed in the shallow trench isolation structure; and the shared contact hole is arranged at the joint of the first active region and the polycrystalline silicon structure and stretches across the first active region and the polycrystalline silicon structure. The semiconductor structure provided by the utility model can effectively test the electric leakage defect of the semiconductor, thereby improving the product yield.

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