Wafer bearing device and semiconductor process equipment applying same
By introducing the charge release department in the wafer carrying device, the problem of crushing the residual charge on the wafer tray on the wafer tray was solved, and a more efficient film deposition process operation was realized.
Patent Information
- Application Number
- CN202420123092.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-17
- Publication Date
- 2025-01-28
- Estimated Expiration
- 2034-01-17
AI Technical Summary
In semiconductor processing technology, the remaining charge on the wafer tray will cause the wafer to easily break when taken out and affect the efficiency of the thin film deposition process.
Design a wafer bearer device, including wafer tray, base and charge release department. The charge release department can automatically contact the wafer tray and release the residual charges after the film sedimentation process is over through the front -end of the conductivity, the second support component, the second power component, and the second drive component.
The wafer adsorption phenomenon caused by residual charges is effectively avoided, the risk of wafer crushing is reduced, and the operation process of the film deposition process is optimized.
Smart Images
Figure CN222421940U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor processing technology, and in particular to a wafer carrier and semiconductor process equipment using the same. Background Art
[0002] With the rapid development of the electronics industry, the demand for semiconductor products is also increasing day by day, so the generation of semiconductor wafers is required to have a higher pass rate and efficiency. In the semiconductor processing technology, physical vapor deposition technology (PVD) is a commonly used technology for depositing thin films on the surface of substrates. Physical vapor deposition equipment is a commonly used equipment for thin film deposition through PVD process. A base is provided in the working chamber for placing a wafer tray, and the wafer tray is used to place the wafer, and the wafer tray is coupled to a bias power supply located outside the working chamber.
[0003] During the thin film deposition process of the wafer, a stable negative voltage is usually formed on the surface of the wafer under the action of the bias power supply. Since the base under the wafer tray is an insulator, when the bias power supply is cut off, residual charge will remain on the wafer tray and form a micro electric field between the wafer tray and the base. The residual charge on the surface of the wafer will cause the wafer to be adsorbed on the wafer tray, making the wafer easy to break when it is taken. Utility Model Content
[0004] The purpose of the present application is to provide a wafer carrying device and a semiconductor process equipment using the same, which can effectively eliminate the residual charge on the surface of the wafer to prevent the wafer from being adsorbed on the wafer tray after the thin film deposition process is completed.
[0005] In order to achieve the above-mentioned purpose and other related purposes, the present application provides a wafer carrying device, comprising:
[0006] A wafer tray having a front side for placing wafers, and a back side opposite to the front side;
[0007] A base, connected to the back side of the wafer tray to carry the wafer tray, wherein the base is provided with a first through hole exposing the wafer tray;
[0008] A first supporting portion, connected to the bottom of the base to support the base;
[0009] The charge release portion is located below the wafer tray. In the top view of the base, one end of the charge release portion close to the wafer tray is located in the first through hole. In the axial direction of the base, one end of the charge release portion close to the wafer tray is spaced apart from the wafer tray, and the charge release portion can move along the axial direction of the first through hole so that the charge release portion contacts the wafer tray when charge release is required.
[0010] Optionally, the charge release unit includes a conductive front end, a second support component, and a second power supply component;
[0011] The second supporting component is connected to the bottom of the conductive front end to support the conductive front end, the second power supply component is electrically connected to the conductive front end, and, in a top view of the seat plate, the conductive front end is located in the first through hole.
[0012] Optionally, the conductive front end is a spring structure.
[0013] Optionally, the second power supply component includes a second power supply, and a positive electrode of the second power supply is electrically connected to the conductive front end.
[0014] Optionally, the charge release portion further includes a second driving component, which is connected to an end of the second supporting component opposite to the conductive front end to drive the second supporting component to move axially along the first through hole.
[0015] Optionally, the second supporting assembly includes a second support rod, one end of the second support rod is connected to the second driving assembly, and the other end is connected to the conductive front end of the charge release portion to drive the conductive front end to move axially along the first through hole.
[0016] Optionally, the second supporting assembly includes a coaxially connected second support rod and a second transmission shaft, one end of the second support rod is connected to the conductive front end of the charge release portion, and one end of the second transmission shaft is connected to the second driving assembly.
[0017] Optionally, the charge release unit further includes a second control component to control the operation of the charge release unit.
[0018] Optionally, the second control component is electrically connected to a machine control terminal in a semiconductor process equipment to obtain a first operating voltage.
[0019] The present application also provides a semiconductor process equipment, which is applied to a physical vapor deposition process, comprising a working chamber, a machine control terminal, and any one of the wafer carrying devices described in the aforementioned embodiments;
[0020] Among them, one end of the wafer tray of the wafer carrying device is located in the working chamber, the machine control end is electrically connected to the working chamber and the wafer carrying device to control the operation of the semiconductor process equipment, and the wafer tray is used to place wafers and perform a thin film deposition process in the working chamber.
[0021] The wafer carrier device and the semiconductor process equipment using the same provided by the present application have at least the following beneficial effects:
[0022] The wafer carrying device of the present application includes a wafer tray, a base and a charge release part. The base is provided with a first through hole exposing the wafer tray. The charge release part includes a conductive front end, a second supporting component, a second power supply component and a second driving component. In a top view of the base, the conductive front end is located in the first through hole. When the thin film deposition process is completed, the second driving component drives the second supporting component to drive the conductive front end to approach and contact the wafer tray. The conductive front end is electrically connected to the positive pole of the second power supply component, so that the residual charge in the wafer tray and the wafer is fully released, effectively avoiding the wafer being adsorbed on the wafer tray due to the presence of residual charge, resulting in the wafer being broken when being taken; and after the residual charge is released, the conductive front end can be spaced apart from the wafer tray by the second driving component, thereby avoiding the charge release part affecting the charge distribution on the wafer surface during the thin film deposition process.
[0023] The semiconductor process equipment provided in the present application includes any one of the wafer carrier devices in the aforementioned embodiments, and therefore also has the beneficial effects of the aforementioned embodiments. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0025] Figure 1 Shown is a front view of the wafer carrier provided in Example 1 of the present application.
[0026] Figure 2 Shown is a schematic diagram of the structure of the wafer carrier provided in Example 1 of the present application.
[0027] Figure 3 Shown is a schematic structural diagram of the wafer carrier provided in the first embodiment of the present application from another perspective.
[0028] Figure 4 Display as Figure 1The schematic diagram of the structure of the charge release part in the wafer supporting device is shown.
[0029] Figure 5 Shown is a structural schematic diagram of a wafer carrying device provided in an optional embodiment of the first embodiment of the present application.
[0030] Figure 6 Shown is a structural schematic diagram of a wafer carrying device provided in an optional embodiment of the first embodiment of the present application.
[0031] Figure 7 Shown is a schematic diagram of the structure of the semiconductor process equipment provided in Example 2 of the present application.
[0032] List of reference numerals:
[0033] 1 Wafer carrier 11 Wafer tray
[0034] 12 base 121 first through hole
[0035] 13 first support portion 14 charge release portion
[0036] 141 conductive front end 142 second supporting component
[0037] 1421 second support rod 1422 second transmission shaft
[0038] 143 second power supply component 1431 second power supply
[0039] 1432 Second power supply rack 144 Second drive assembly
[0040] 145 Second control component 2 working chamber
[0041] 3 Power supply device 31 First power supply
[0042] 4 Machine control terminal DETAILED DESCRIPTION
[0043] In order to make the technical purpose, technical solution and technical effect of the present application clearer, the technical solution in the present application will be clearly and completely described in conjunction with the embodiments below. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.
[0044] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the present application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.
[0045] In the description of the present application, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0046] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. In addition, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the implementation or example are included in at least one implementation or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable scheme.
[0047] In the existing semiconductor process equipment for performing thin film deposition on wafers, a wafer tray is provided in the working chamber to place the wafer and perform thin film deposition, and the wafer tray is located above the base, wherein the wafer tray is usually made of metal material and the base is usually made of insulating material. The wafer tray is coupled to a bias power supply located outside the working chamber, and the bias power supply can form a stable negative voltage on the surface of the wafer. When the bias power supply is turned off, since the base is made of insulating material, residual charge will remain on the surface of the wafer, and a micro electric field will be formed between the base and the wafer tray. The residual charge in the wafer will cause the wafer to be adsorbed on the wafer tray, so that when the wafer is taken, the wafer on the wafer tray is easily broken.
[0048] In view of the above defects in the prior art, the present application provides a wafer carrier and a semiconductor process equipment using the same to solve the above defects. The present application is now described in detail through specific embodiments and in conjunction with the accompanying drawings.
[0049] Embodiment 1
[0050] This embodiment provides a wafer carrier device suitable for semiconductor process equipment. Figure 1 , including a wafer tray 11, a base 12, a first supporting portion 13 and a charge releasing portion 14.
[0051] Reference Figure 2 and Figure 3 The wafer tray 11 is a disc-shaped structure having a front side for placing wafers and a back side opposite to the front side of the wafer. The base 12 is arranged below the wafer tray 11 and connected to the back side of the wafer tray 11 to support the wafer tray 11. A first through hole 121 is arranged in the base 12, and the first through hole 121 exposes the wafer tray 11. A first supporting portion 13 is arranged below the base 12, and a first supporting assembly is arranged in the first supporting portion 13. The first supporting assembly is connected to the base 12 to support the base 12. Optionally, the first supporting portion 13 is fixedly connected to the base 12. The charge release part 14 is located as a whole below the wafer tray 11. Optionally, one end of the charge release part 14 close to the wafer tray 11 is located in the first through hole 121 and is spaced apart from the wafer tray 11; or the charge release part 14 is located as a whole below the first through hole 121, and the charge release part 14 can move along the axial direction of the first through hole 121, so that when it is necessary to release the charge, the charge release part 14 can contact the wafer tray 11, thereby releasing the residual charge on the wafer tray 11 and the wafer. By spacing the charge release part 14 from the wafer tray 11, during the thin film deposition process, the charge release part 14 will not affect the negative voltage formed on the wafer surface, nor will it affect the charge distribution on the wafer surface. When it is necessary to release the charge on the wafer tray 11 and the wafer, the charge release part 14 is brought close to and in contact with the wafer tray 11, thereby releasing the wafer on the wafer tray 11 and the residual charge in the wafer tray 11.
[0052] Reference Figure 4The charge release part 14 includes a conductive front end 141, a second support component 142, and a second power supply component 143. The conductive front end 141 is used to release the residual charge on the wafer tray 11 and the wafer; the second support component 142 is located below the conductive front end 141 and is connected to the conductive front end 141 to support the conductive front end 141; the second power supply component 143 is electrically connected to the conductive front end 141, and the second power supply component 143 can provide the conductive front end 141 with a charge that is opposite to the residual charge on the wafer tray 11 and the wafer, so as to neutralize the residual charge on the wafer tray 11 and the wafer surface. In the top view of the base 12, the conductive front end 141 is located inside the first through hole 121, so that the conductive front end 141 can contact the wafer tray 11 through the first through hole 121, thereby releasing the residual charge in the wafer tray 11 and the wafer. Preferably, the axial height of the conductive front end 141 along the first through hole 121 is greater than the thickness of the base 12 , so that when one end of the conductive front end 141 contacts the wafer tray 11 , the other end of the conductive front end 141 is located below the base 12 .
[0053] In an alternative embodiment, reference Figures 4 to 6 The conductive front end 141 may be a cylindrical structure, a rectangular structure, a spiral structure, or other structures, and the present embodiment is not limited thereto. The conductive front end 141 is arranged along the axial center line of the first through hole 121 and is colinear with the axial direction of the first through hole 121, so that the conductive front end 141 can move in the axial direction of the first through hole 121 without contacting the side wall of the first through hole 121. Optionally, the conductive front end 141 is an elastic structure as a whole, so that when the conductive front end 141 contacts with the wafer tray 11, elastic contact is achieved, thereby avoiding the conductive front end 141 from pushing the wafer tray 11 too much, causing the wafer tray 11 to be damaged, or causing the structure or position of the wafer tray 11 to change, causing the wafer located above the wafer tray 11 to be damaged; preferably, the conductive front end 141 is an elastic conductive material; further, the conductive front end 141 is a spring structure.
[0054] The second power supply assembly 143 includes a second power supply 1431, which is electrically connected to the conductive front end 141. The second power supply 1431 can provide the conductive front end 141 with a charge that is electrically opposite to the residual charge in the wafer tray 11 and the wafer; when the conductive front end 141 contacts the wafer tray 11, the second power supply 1431 neutralizes the residual charge in the wafer tray 11 and the wafer through the conductive front end 141; optionally, the second power supply 1431 is a DC power supply. The second power supply assembly 143 also includes a second power supply rack 1432 for mounting the second power supply 1431. Optionally, the conductive front end 141 is electrically connected to the positive terminal in the second power supply assembly 143, so that the second power supply 1431 can provide the conductive front end 141 with a positive charge, thereby neutralizing the residual negative charge on the wafer tray 11 and the wafer.
[0055] In this embodiment, the charge release unit 14 further includes a second drive component 144, which is connected to the second support component 142 and is located at an end of the second support component 142 opposite to the conductive front end 141. Optionally, the second drive component 144 is fixedly connected to the second support component 142. The second drive component 144 can drive the second support component 142 to move along the axial direction of the first through hole 121, so that the conductive front end 141 contacts the wafer tray 11, or moves the conductive front end 141 in a direction away from the wafer tray 11; optionally, the second support component 142 is connected to the second power supply component 143, and the second power supply component 143 is electrically connected to the conductive front end 141 through the second support component 142.
[0056] In an optional embodiment, the second support assembly 142 includes a second support rod 1421, one end of the second support rod 1421 is connected to the second drive assembly 144, and the other end is connected to the conductive front end 141 of the charge release portion 14, and optionally, a second drive motor is provided in the second drive assembly 144, and the second drive motor can drive the second support rod 1421 and drive the conductive front end 141 to move axially along the first through hole 121. Optionally, the second support rod 1421 is a metal rod, and the second support rod 1421 is electrically insulated from the second drive assembly 144, and the second power supply assembly 143 is connected to the second support rod 1421, and the second power supply assembly 143 is electrically connected to the conductive front end 141 through the second support rod 1421.
[0057] In another optional embodiment, the second support assembly 142 includes a second support rod 1421 and a second transmission shaft 1422 connected to each other, the second support rod 1421 and the second transmission shaft 1422 are coaxially arranged, one end of the second support rod 1421 is connected to the conductive front end 141 in the charge release part 14, and the other end is connected to the second transmission shaft 1422, and the other end of the second transmission shaft 1422 is connected to the second driving assembly 144, and the second driving assembly 144 can drive the second transmission shaft 1422 to move axially along the first through hole 121, so that the second support rod 1421 drives the conductive front end 141 to move axially along the first through hole 121. Optionally, the second support rod 1421 is a metal rod, the second transmission shaft 1422 is an insulating rod, the second support rod 1421 and the second transmission shaft 1422 are electrically insulated, the second support rod 1421 is electrically connected to the second power supply component 143, so that the second power supply component 143 is electrically connected to the conductive front end 141, and the second power supply component 143 and the second drive component 144 are electrically insulated.
[0058] In an optional embodiment, the second transmission shaft 1422 may also be configured as a telescopic rod and recorded as a second telescopic rod, that is, the second support assembly 142 includes a second support rod 1421 and a second telescopic rod connected to each other, the second support rod 1421 and the second telescopic rod are coaxially arranged, one end of the second support rod 1421 is connected to the conductive front end 141 in the charge release part 14, and the other end is connected to the second telescopic rod, and the other end of the second telescopic rod is connected to the second driving assembly 144. The second telescopic rod can perform telescopic movement along the axial direction of the first through hole 121, so that the second support rod 1421 moves along the axial direction of the first through hole 121, thereby driving the conductive front end 141 to move.
[0059] In this embodiment, refer to Figure 5 and Figure 6 The charge release unit 14 further includes a second control component 145, which is used to control the operation of the charge release unit 14. The second control component 14 is connected to the second drive component 144 to control the start and stop and the working state of the second drive component 144. Specifically, the second control component 14 can control the start and stop of the second drive component 144, and control the second drive component 144 to drive the second support component 142 close to or away from the wafer tray 11. The second control component 14 is also connected to the second power supply component 143 to control the start and stop of the second power supply component 143. When the residual charge in the wafer tray 11 needs to be released, the second control component 14 starts the second power supply component 143 to work. When the residual charge in the wafer tray 11 is released, the second control component 14 stops the second power supply component 143 from working.
[0060] When in use, after the deposition process in the working chamber of the semiconductor process equipment is completed, the second control component 145 controls the second drive component 144 to start working, so as to drive the second support component 142 to bring the conductive front end 141 into contact with the wafer tray 11; the second control component 145 starts the second power supply component 143 to provide the conductive front end 141 with a charge that is electrically opposite to the residual charge on the wafer tray 11 and the wafer; after the residual charge is released, the second control component 145 controls the second power supply component 143, and controls the second drive component 144 to move the conductive front end 141 away from the wafer tray 11, so that the conductive front end 141 is spaced apart from the wafer tray 11.
[0061] The wafer carrying device 1 provided in the present embodiment includes a wafer tray 11, a base 12 and a charge release unit 14. A first through hole 121 is provided in the base 12, and the first through hole 121 exposes the wafer tray 11. The charge release unit 14 includes a conductive front end 141, a second supporting component 142, a second power supply component 143, and a second driving component 144. In addition, in a top view of the base 12, the conductive front end 141 is located in the first through hole 121. When the deposition process is completed, the conductive front end 141 is brought into contact with the wafer tray 11 through the second driving component, and the second power supply component 143 is started to release the residual charge on the wafer tray 11 and the wafer, which can effectively prevent the wafer from being adsorbed on the wafer tray due to the existence of the residual charge, so that the wafer is broken when it is taken out. Moreover, after the residual charge is released, the conductive front end 141 is controlled to be away from the wafer tray 11 so that the charge release unit 14 is spaced apart from the wafer tray 11, which can prevent the charge release unit 14 from affecting the negative voltage and charge distribution on the wafer surface during the deposition process.
[0062] Embodiment 2
[0063] The present embodiment provides a semiconductor process equipment, which is applied to the physical vapor deposition process of wafers, and includes a working chamber 2, a machine control terminal 4, and any one of the wafer carrying devices 1 in the aforementioned embodiments.
[0064] Reference Figure 7 In the semiconductor process equipment of this embodiment, the working chamber 2 is a place for performing a thin film deposition process. One end of the wafer tray 11 in the wafer carrier 1 is arranged in the working chamber 2. The wafer is placed on the wafer tray 11, and a thin film deposition process is performed in the working chamber 2. The machine control terminal 4 is connected to the working chamber 2 and the wafer carrier 1. The machine control terminal 4 can control the semiconductor process equipment to perform a thin film deposition process.
[0065] In this embodiment, the second control component 145 in the wafer carrier 1 is connected to the machine control terminal 4. The second control component 145 can obtain the first working voltage output by the machine control terminal 4 for performing the thin film deposition process. The second control component 145 controls the charge release unit 14 to operate according to the obtained first working voltage.
[0066] Specifically, after the thin film deposition process is completed, the second control component 145 obtains the first working voltage. When the first working voltage is greater than the first preset value, the second control component 145 controls the second driving component 144 of the charge release part 145 to start working, so as to drive the second support component 142 to drive the conductive front end 141 to contact the wafer tray 11, and start the second power supply component 143 to provide the conductive front end 141 with a charge with an opposite electrical property to the residual charge on the wafer tray 11 and the wafer; when the first working voltage is less than or equal to the first preset value, the second power supply component 143 is controlled to stop working through the second control component 145, and the second driving component 144 is controlled to keep the conductive front end 141 away from the wafer tray 11; optionally, the first preset value is 15V.
[0067] In this embodiment, the semiconductor process equipment further includes a power supply device 3, which includes a first power supply 31, and the first power supply 31 is electrically connected to the wafer carrier 1 to form a stable negative voltage on the surface of the wafer on the wafer tray 11 in the wafer carrier 1, thereby attracting positive ions in the working chamber to bombard the wafer surface. Optionally, the first power supply 31 is an AC bias power supply.
[0068] The semiconductor process equipment provided in this embodiment includes any one of the wafer carrying devices in the aforementioned embodiments, and therefore also has the beneficial effects of the aforementioned embodiments.
[0069] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify, change or combine the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.
Claims
1. A wafer carrying device, characterized in that: include: A wafer tray having a front side for placing wafers, and a back side opposite to the front side; A base, connected to the back side of the wafer tray to carry the wafer tray, wherein the base is provided with a first through hole exposing the wafer tray; A first supporting portion, connected to the bottom of the base to support the base; The charge release portion is located below the wafer tray. In the top view of the base, one end of the charge release portion close to the wafer tray is located in the first through hole. In the axial direction of the base, one end of the charge release portion close to the wafer tray is spaced apart from the wafer tray, and the charge release portion can move axially along the first through hole so that the charge release portion contacts the wafer tray when charge release is required.
2. The wafer carrier device according to claim 1, characterized in that: The charge release unit includes a conductive front end, a second support component, and a second power supply component; The second supporting component is connected to the bottom of the conductive front end to support the conductive front end, the second power supply component is electrically connected to the conductive front end, and, in a top view of the base, the conductive front end is located in the first through hole.
3. The wafer carrier device according to claim 2, characterized in that: The conductive front end is a spring structure.
4. The wafer carrier device according to claim 2, characterized in that: The second power supply assembly includes a second power supply, and a positive electrode of the second power supply is electrically connected to the conductive front end.
5. The wafer carrying device according to claim 2, characterized in that: The charge release portion further includes a second driving component connected to an end of the second supporting component opposite to the conductive front end to drive the second supporting component to move along the axial direction of the first through hole.
6. The wafer carrier device according to claim 5, characterized in that: The second supporting assembly includes a second support rod, one end of which is connected to the second driving assembly, and the other end of which is connected to the conductive front end of the charge release portion to drive the conductive front end to move axially along the first through hole.
7. The wafer carrying device according to claim 5, characterized in that: The second supporting assembly includes a coaxially connected second support rod and a second transmission shaft, one end of the second support rod is connected to the conductive front end of the charge release portion, and one end of the second transmission shaft is connected to the second driving assembly.
8. The wafer carrier device according to claim 1 or 2, characterized in that: The charge release unit further includes a second control component to control the operation of the charge release unit.
9. The wafer carrying device according to claim 8, characterized in that: The second control component is electrically connected to a machine control terminal in a semiconductor process equipment to obtain a first working voltage.
10. A semiconductor process equipment, applied to physical vapor deposition process, characterized in that: It comprises a working chamber, a machine control terminal and a wafer carrying device as claimed in any one of claims 1 to 9; Among them, one end of the wafer tray of the wafer carrying device is located in the working chamber, the machine control end is electrically connected to the working chamber and the wafer carrying device to control the operation of the semiconductor process equipment, and the wafer tray is used to place wafers and perform a thin film deposition process in the working chamber.