A high color gamut LED packaging structure

Abstract

The utility model relates to the field of LED technology, and provides a high color gamut LED packaging structure, including a bracket, the function of the bracket is to provide physical support and electrical connection for the components installed on the bracket, the top surface of the bracket is installed with an LED chip, the outer shell of the LED chip is provided with a packaging mechanism, the packaging mechanism includes a packaging glue, the packaging glue is mixed with phosphor, the LED chip includes a multi-quantum well layer, the multi-quantum well layer is used to generate light of different wavelengths, and the multi-quantum well layer includes a plurality of blue light multi-quantum well layers and a plurality of green light multi-quantum well layers. By integrating blue light and green light multi-quantum well layers in the LED chip, and combining with external red phosphor, when the LED lamp bead is powered on to emit light, the spectrum composed of the blue light of the chip, the green light of the chip, and the red phosphor, the NTSC color gamut can reach 100%-130%, which is 5%-65% higher than the color gamut of the blue light excitation phosphor, and by directly generating multiple color lights on a single chip, the dependence on pure chip solutions is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of LEDs, and in particular to a high color gamut LED packaging structure. Background Art

[0002] LED (Light Emitting Diode) is a solid-state semiconductor device that can convert electrical energy into light energy. It has the advantages of low power consumption, good focusing effect, fast response speed, strong controllability, ability to withstand high impact, long service life, and environmental protection. LED is gradually replacing traditional light sources and becoming the fourth generation of light sources. For LED packaging devices, different packaging structures will have a relatively large impact on LEDs, such as affecting life, luminous angle, color gamut, etc.

[0003] In order to achieve high color gamut lamp beads, many solutions use chips with high color gamut phosphors. If blue light chips are used with phosphors, the NTSC color gamut can only reach about 95% at most, and the life span is also relatively low. If pure chips are used, the cost of lamp beads will be very expensive.

[0004] The purpose of the utility model is to solve the problem of low color gamut and high price of traditional LED lamp beads. Utility Model Content

[0005] The purpose of this utility model is to solve the problem of low color gamut and high price of traditional LED lamp beads. This utility model adopts the following technical solutions:

[0006] A high color gamut LED packaging structure, comprising a bracket, the function of the bracket being to provide physical support and electrical connection for components mounted on the bracket, an LED chip being mounted on the top surface of the bracket, a packaging mechanism being disposed on the outer jacket of the LED chip, the packaging mechanism comprising packaging glue, and phosphor powder being mixed in the packaging glue;

[0007] The LED chip comprises a multi-quantum well layer, and the multi-quantum well layer is used to generate light of different wavelengths. The multi-quantum well layer comprises a plurality of blue light multi-quantum well layers and a plurality of green light multi-quantum well layers.

[0008] In the high color gamut LED packaging structure as described above, the blue light multi-quantum well layer and the green light multi-quantum well layer are both composed of an InGaN (indium gallium nitride) barrier layer and an InGaN well layer. The thickness of the InGaN barrier layer of the green light multi-quantum well layer is 5-25nm, the In content is 20%-85%, and the emission wavelength is 515-550nm. The thickness of the InGaN well layer of the green light multi-quantum well layer is 1-7nm, the In content is 1%-25%, the thickness of the InGaN barrier layer of the blue light multi-quantum well layer is 5-25nm, the In content is 10%-40%, and the emission wavelength is 440-470nm. The thickness of the InGaN well layer of the blue light multi-quantum well layer is 1-7nm, and the In content is 1%-25%.

[0009] In a high color gamut LED packaging structure as described above, a P-type GaN layer (hole-type gallium nitride layer) is arranged above the multi-quantum well layer, and an N-type GaN layer (electron-type gallium nitride layer) is arranged below the multi-quantum well layer. The function of the N-type GaN layer is to provide electrons, and the function of the P-type GaN layer is to provide holes. The P-type GaN layer and the N-type GaN layer together form a PN junction.

[0010] A high color gamut LED packaging structure as described above, wherein the LED chip (5) comprises a substrate (51), a connection layer located between the substrate and an N-type GaN layer, the connection layer comprising an undoped GaN layer (53) located below the N-type GaN layer (54), and a GaN buffer layer (52) located between the undoped GaN layer (53) and the substrate (51).

[0011] In the high color gamut LED packaging structure as described above, the total number of multi-quantum well layers is at least two, including a blue light multi-quantum well layer and a green light multi-quantum well layer.

[0012] In the high color gamut LED packaging structure as described above, the packaging mechanism includes a bracket cup, the bracket cup is made of a transparent or opaque material, the bracket cup is fixedly connected to the bracket, and the bracket cup is sleeved outside the packaging glue.

[0013] In the high color gamut LED packaging structure as described above, the positive and negative electrodes of the LED chip are welded with bonding wires, one end of the bonding wire is fixedly connected to the bracket, and the bracket is electrically connected to the LED chip through the bonding wire.

[0014] In the high color gamut LED packaging structure as described above, the side of the LED chip in contact with the bracket 1 is coated with a bonding adhesive, and the LED chip is fixedly connected to the bracket through the bonding adhesive.

[0015] In the high color gamut LED packaging structure as described above, the color of the phosphor is red.

[0016] In the high color gamut LED packaging structure as described above, a plurality of the blue light multi-quantum well layers and a plurality of the green light multi-quantum well layers are alternately stacked.

[0017] Implementing the embodiments of the utility model has the following beneficial effects:

[0018] 1. In the utility model, by integrating blue light and green light multi-quantum well layers in the LED chip and combining with external red phosphor, when the LED lamp bead is powered on to emit light, the spectrum composed of the blue light of the chip, the green light of the chip, and the red phosphor has a higher NTSC color gamut than the color gamut of the blue light exciting the phosphor. By directly generating multiple colors of light on a single chip, the dependence on pure chip solutions is reduced, and the number of chips used is less than that used in the pure chip solution, thereby reducing costs.

[0019] 2. In the present invention, a non-doped GaN layer and a GaN buffer layer are used, which effectively alleviates the lattice mismatch between different materials and reduces the dislocation density, thereby enhancing the crystal quality and long-term reliability of the device.

[0020] In summary, the utility model solves the problem of low color gamut and high price of traditional LED lamp beads. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 It is a structural schematic diagram of a high color gamut LED packaging structure of the utility model.

[0023] Figure 2 It is a structural schematic diagram of an LED chip of a high color gamut LED packaging structure of the utility model.

[0024] Figure 3 It is a structural schematic diagram of a multi-quantum well layer of a high color gamut LED packaging structure of the utility model.

[0025] Figure 4 It is a structural schematic diagram of a high color gamut LED packaging structure of the present invention when a flip chip is installed. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] like Figures 1 to 4 As shown, the embodiment of the utility model proposes a high color gamut LED packaging structure, including a bracket 1, the function of the bracket 1 is to provide physical support and electrical connection for the components installed on the bracket 1, the top surface of the bracket 1 is mounted with an LED chip 5, the type of the LED chip 5 is one of a top-mounted chip, a vertical chip and a flip chip, the outer shell of the LED chip 5 is provided with a packaging mechanism, the packaging mechanism includes a packaging glue 3, and the packaging glue 3 is mixed with phosphor 4;

[0028] The LED chip 5 includes a multi-quantum well layer 55 , and the multi-quantum well layer 55 is used to generate light of different wavelengths. The multi-quantum well layer 55 includes a plurality of blue light multi-quantum well layers 551 and a plurality of green light multi-quantum well layers 551 .

[0029] The LED chip 5 is a light-emitting element, which includes a multi-quantum well layer 55. The multi-quantum well layer 55 is composed of multiple very thin semiconductor layers, which can change the recombination process of electrons and holes through the quantum confinement effect, thereby controlling the energy of released photons, that is, the wavelength of light. The blue multi-quantum well layer 551 and the green multi-quantum well layer 551 are responsible for generating blue light and green light respectively. By regulating the structure and materials of these multi-quantum wells, light of a specific wavelength band can be effectively generated, laying the foundation for high color gamut display.

[0030] Further, as a preferred embodiment of the present invention but not a limitation, the color of the phosphor 4 is red. Through the conversion effect of the red phosphor, the LED light source can obtain red light components in addition to the blue light and green light directly emitted, which significantly broadens the color gamut coverage of the light source. Specifically, in display technology, the combination of red, green and blue (RGB primary colors) is the basis for building a wide range of colors, so the addition of red phosphor can generate more saturated red and rich and delicate colors.

[0031] Optionally, in some embodiments, the color of the phosphor 4 is yellow. The yellow phosphor can work together with the directly emitted blue light and green light to supplement the yellow part of the light source. It can also indirectly synthesize white light with blue light or synthesize richer intermediate colors with green and blue light to enhance the overall color saturation and naturalness.

[0032] Further, as a preferred embodiment of the present invention but not a limitation, the blue light multi-quantum well layer 551 and the green light multi-quantum well layer 552 are both composed of an InGaN barrier layer and an InGaN well layer. The thickness of the InGaN barrier layer of the green light multi-quantum well layer 552 is 5-25nm, the In content is 20%-85%, and the emission wavelength is 515-550nm, covering the green light region, thereby enhancing the green expression of the LED chip and broadening the overall color gamut. The thickness of the InGaN well layer of the green light multi-quantum well layer 552 is 1-7nm, and the In content is 1%-25%, aiming to optimize The emission efficiency of green light is improved while ensuring a good electronic structure match with the barrier layer to promote effective transitions between energy levels. The thickness of the InGaN barrier layer of the blue light multi-quantum well layer 551 is 5-25nm, the In content is 10%-40%, and the emission wavelength is 440-470nm. Blue light is the basic light source of LED and provides efficient energy for subsequent phosphor excitation. The thickness of the InGaN well layer of the blue light multi-quantum well layer 551 is 1-7nm, and the In content is 1%-25%, which corresponds to the well layer design in the green light multi-quantum well layer 552 to optimize the emission efficiency of blue light and the overall performance of the device.

[0033] Further, as a preferred embodiment of the present invention but not limiting, a P-type GaN layer 56 is disposed above the multi-quantum well layer 55, the thickness of the P-type GaN layer 56 is about 50-250nm, and the Mg doping concentration is greater than 10 18 / cm 3 An N-type GaN layer 54 is disposed below the multi-quantum well layer 55. The thickness of the N-type GaN layer 54 is about 0.5-5 μm, and the doping concentration of Si is greater than 10 18 / cm 3 The function of the N-type GaN layer 54 is to provide electrons, and the function of the P-type GaN layer 56 is to provide holes. The P-type GaN layer 56 and the N-type GaN layer 54 form a PN junction together. The N-type GaN4 layer introduces excess electrons by doping with silicon Si elements and becomes the source of electrons. The P-type GaN layer introduces a state of lacking electrons, i.e., holes, by doping with magnesium Mg and becomes a positive charge carrier. When the LED chip is powered on, electrons and holes are injected from the P-type layer and the N-type layer into the multi-quantum well region respectively under the action of the electric field. When electrons and holes recombine in the multi-quantum well layer 55, electrons jump from the conduction band to the valence band to fill the holes, and at the same time, excess energy is released in the form of photons.

[0034] Furthermore, as a preferred embodiment of the utility model but not a limitation, the LED chip (5) comprises a substrate (51), a connecting layer located between the substrate and the N-type GaN layer, the connecting layer comprises a non-doped GaN layer (53) located below the N-type GaN layer (54), and a GaN buffer layer (52) located between the non-doped GaN layer (53) and the substrate (51), the non-doped GaN layer 53 has a thickness of 0.5-3 μm, and the non-doped GaN layer 53 acts as a lattice matching layer, which can effectively alleviate the mismatch stress caused by the difference in lattice constants between substrates of different materials, such as sapphire or silicon and GaN, reduce the dislocation density, and thus improve the overall crystal quality and reliability of the device. The non-doped GaN layer acts as a barrier layer between the N-type GaN layer 53 and the substrate 51, which helps to prevent or reduce the direct penetration of electrons into the substrate 51, thereby optimizing the electrical performance of the device. The substrate 51 is made of sapphire, silicon or gallium nitride. The thickness of the GaN buffer layer 52 is 20-40nm. The main function of the GaN buffer layer 52 is to bridge the lattice difference between the substrate 51 and the GaN layer, and effectively reduce the dislocation caused by the lattice mismatch through progressive growth, thereby improving the crystal quality of the subsequent epitaxial layer. In addition, it also helps to improve the material adhesion and provide a flatter and more uniform growth platform for the top structure.

[0035] Optionally, in some embodiments, the substrate 51 is made of sapphire. Sapphire substrate has extremely high chemical stability and thermal stability, and is suitable for high temperature environments during LED growth.

[0036] Optionally, in some embodiments, the substrate 51 is made of silicon, which is the most commonly used material in the semiconductor industry, with high output and low cost. The thermal conductivity of silicon is better than that of sapphire, which helps to improve the heat dissipation performance of the LED.

[0037] Optionally, in some embodiments, the material of the substrate 51 is gallium nitride. The gallium nitride substrate has a high lattice matching degree with the gallium nitride epitaxial layer, and can grow a high-quality epitaxial film, which greatly reduces the dislocation density and improves the device performance.

[0038] Further, as a preferred embodiment of the present invention but not a limitation, the total number of layers of the multi-quantum well layer 55 is at least two, including a blue multi-quantum well layer 551 and a green multi-quantum well layer 552. By having at least one blue multi-quantum well layer 551 and one green multi-quantum well layer 552, the foundation of a wide color gamut LED is laid. Blue light is the main excitation source of LED light, while green light can broaden the color gamut and improve color saturation. The combination of the two can initially achieve good coverage of the blue and green regions, laying the foundation for achieving wide color gamut light emission.

[0039] Optionally, in some embodiments, the total number of layers of the multi-quantum well layer 55 is 5-10 layers. By adjusting the total number of layers of the multi-quantum well layer, the light output intensity and spectral characteristics of the LED can be regulated. The range of 5 to 10 layers can ensure sufficient quantum wells to improve the luminous efficiency while avoiding the increase in complexity and possible decrease in efficiency caused by excessive stacking.

[0040] Further, as a preferred embodiment of the present utility model but not limiting, the packaging mechanism includes a bracket cup 2, the bracket cup 2 is made of a transparent material, the bracket cup 2 is fixedly connected to the bracket 1, and the bracket cup 2 is sleeved outside the packaging glue 3. The bracket cup 2 is a physical support provided by the packaging glue 3, and is made of a transparent material. The bracket cup 2 can be used as an optical channel to allow the light emitted by the LED chip and the light converted by the phosphor to be transmitted smoothly, without affecting the light effect, and optimizing the light distribution.

[0041] Optionally, in some embodiments, the support cup 2 is made of an opaque material, which can serve as a light barrier to shield unwanted stray light, guide light to be emitted in a specific direction, and improve the directionality of the light source.

[0042] Further, as a preferred embodiment of the present invention but not limiting, the positive and negative electrodes of the LED chip 5 are welded with bonding wires 7, the material of the bonding wires 7 is one of gold wire, silver wire, copper wire, aluminum wire or alloy wire, one end of the bonding wires 7 is fixedly connected to the bracket 1, and the bracket 1 is electrically connected to the LED chip 5 through the bonding wires 7. The bonding wires 7 enable current to be transmitted from the external circuit to the LED chip 5 via the bracket 1, activating the PN junction and generating light.

[0043] Furthermore, as a preferred embodiment of the present invention but not limiting, a surface of the LED chip 5 in contact with the bracket 1 is coated with a bonding adhesive 6 , and the LED chip 5 is fixedly connected to the bracket 1 through the bonding adhesive 6 .

[0044] Optionally, in some embodiments, when the LED chip 51 is a face-up chip, the bonding glue 6 is one of silicone, epoxy resin or silicone doped with alumina; when the LED chip 51 is a vertical chip, the bonding glue 6 is one of conductive silver glue or solder paste; when the LED chip 51 is a flip-chip, the bonding glue 6 is one of gold-tin, solder paste or silver glue.

[0045] Further, as a preferred embodiment of the utility model but not a limitation, a plurality of the blue multi-quantum well layers 551 and a plurality of the green multi-quantum well layers 552 are stacked alternately. By alternately arranging the blue and green multi-quantum well layers in the structure, not only can efficient emission of each band be obtained, but also the fine tuning and expansion of the spectrum can be achieved through the superposition effect of the two. Alternating stacking of multi-quantum well layers of different wavelengths helps to improve the absorption and conversion efficiency of light. The blue light layer is responsible for the basic high-intensity excitation, and the green light layer supplements and adjusts the color temperature. The synergistic effect of the two not only ensures high brightness output, but also makes the color distribution more uniform and natural, reducing color deviation.

[0046] Optionally, in some embodiments, a plurality of the blue multi-quantum well layers 551 and a plurality of the green multi-quantum well layers 552 are stacked in groups, that is, all the blue multi-quantum well layers 551 are stacked first and then all the green multi-quantum well layers 552 are stacked, or all the green multi-quantum well layers 552 are stacked first and then all the blue multi-quantum well layers 551 are stacked. Group stacking simplifies the manufacturing process steps, avoids the complex and precise control required in the alternating deposition process of quantum well layers of different wavelengths, reduces the manufacturing difficulty and cost, and improves production efficiency. Since the interface properties between similar quantum well layers are similar, group stacking is conducive to reducing interface defects and improving the internal consistency of the device, thereby improving the overall photoelectric conversion efficiency and reliability.

[0047] Optionally, in some embodiments, a plurality of the blue light multi-quantum well layers 551 and a plurality of the green light multi-quantum well layers 552 are randomly stacked. The random stacking may cause the spectral output to have a certain randomness, which may be regarded as an advantage in certain specific applications, such as simulating the complex spectral changes of natural light, or creating more natural and irregular light and shadow effects in certain lighting applications.

[0048] like Figures 1 to 3 As shown, the implementation method of Example 1 is as follows:

[0049] A high color gamut LED packaging structure, comprising a bracket 1, the function of the bracket 1 is to provide physical support and electrical connection for the components mounted on the bracket 1, an LED chip 5 is mounted on the top surface of the bracket 1, the type of the LED chip 5 is a front-mounted chip, and a packaging mechanism is arranged on the outer cover of the LED chip 5, the packaging mechanism comprises a packaging glue 3, and the packaging glue 3 is mixed with phosphor 4;

[0050] The LED chip 5 includes a multi-quantum well layer 55 , and the multi-quantum well layer 55 is used to generate light of different wavelengths. The multi-quantum well layer 55 includes a plurality of blue light multi-quantum well layers 551 and a plurality of green light multi-quantum well layers 551 .

[0051] The LED chip 5 is a light-emitting element, which includes a multi-quantum well layer 55. The multi-quantum well layer 55 is composed of multiple very thin semiconductor layers, which can change the recombination process of electrons and holes through the quantum confinement effect, thereby controlling the energy of released photons, that is, the wavelength of light. The blue multi-quantum well layer 551 and the green multi-quantum well layer 551 are responsible for generating blue light and green light respectively. By regulating the structure and materials of these multi-quantum wells, light of a specific wavelength band can be effectively generated, laying the foundation for high color gamut display.

[0052] The color of the phosphor 4 is red. Through the conversion effect of the red phosphor, the LED light source can obtain red light components in addition to the blue light and green light directly emitted, which significantly broadens the color gamut coverage of the light source. Specifically, in display technology, the combination of red, green and blue (RGB primary colors) is the basis for building a wide range of colors, so the addition of red phosphor can generate more saturated red and rich and delicate colors.

[0053] The blue light multi-quantum well layer 551 and the green light multi-quantum well layer 552 are both composed of an InGaN barrier layer and an InGaN well layer. The thickness of the InGaN barrier layer of the green light multi-quantum well layer 552 is 5-25nm, the In content is 20%-85%, and the emission wavelength is 515-550nm, covering the green light region, thereby enhancing the green expression of the LED chip and broadening the overall color gamut. The thickness of the InGaN well layer of the green light multi-quantum well layer 552 is 1-7nm, and the In content is 1%-25%, aiming to optimize the emission efficiency of green light while ensuring The good electronic structure matches the barrier layer to promote effective transitions between energy levels. The InGaN barrier layer thickness of the blue light multi-quantum well layer 551 is 5-25nm, the In content is 10%-40%, and the emission wavelength is 440-470nm. Blue light is the basic light source of LED and provides efficient energy for subsequent phosphor excitation. The InGaN well layer thickness of the blue light multi-quantum well layer 551 is 1-7nm, and the In content is 1%-25%, which corresponds to the well layer design in the green light multi-quantum well layer 552 to optimize the blue light emission efficiency and the overall performance of the device.

[0054] A P-type GaN layer 56 is disposed above the multi-quantum well layer 55. The thickness of the P-type GaN layer 56 is about 50-250 nm, and the Mg doping concentration is greater than 10 18 / cm 3 An N-type GaN layer 54 is disposed below the multi-quantum well layer 55. The thickness of the N-type GaN layer 54 is about 0.5-5 μm, and the doping concentration of Si is greater than 10 18 / cm 3The function of the N-type GaN layer 54 is to provide electrons, and the function of the P-type GaN layer 56 is to provide holes. The P-type GaN layer 56 and the N-type GaN layer 54 form a PN junction together. The N-type GaN4 layer introduces excess electrons by doping with silicon Si elements and becomes the source of electrons. The P-type GaN layer introduces a state of lacking electrons, i.e., holes, by doping with magnesium Mg and becomes a positive charge carrier. When the LED chip is powered on, electrons and holes are injected from the P-type layer and the N-type layer into the multi-quantum well region respectively under the action of the electric field. When electrons and holes recombine in the multi-quantum well layer 55, electrons jump from the conduction band to the valence band to fill the holes, and at the same time, excess energy is released in the form of photons.

[0055] An undoped GaN layer 53 is disposed below the N-type GaN layer 54. The thickness of the undoped GaN layer 53 is 0.5-3 μm. The undoped GaN layer 53 serves as a lattice matching layer, which can effectively alleviate the mismatch stress caused by the difference in lattice constants between different materials, such as sapphire or silicon substrates and GaN, reduce dislocation density, and thus improve the overall crystal quality and reliability of the device. The non-doped GaN layer serves as a barrier layer between the N-type GaN layer 53 and the substrate 51, which helps to prevent or reduce the direct penetration of electrons into the substrate 51, thereby optimizing the electrical performance of the device. The LED chip 5 includes a substrate 51, which is made of sapphire. The sapphire substrate has extremely high chemical stability and thermal stability, and is suitable for the high temperature environment during the LED growth process. A GaN buffer layer 52 is provided between the non-doped GaN layer 53 and the substrate 51, and the thickness of the GaN buffer layer 52 is 20-40nm. The main function of the GaN buffer layer 52 is to bridge the lattice difference between the substrate 51 and the GaN layer, and through progressive growth, effectively reduce the dislocation caused by the lattice mismatch, thereby improving the crystal quality of the subsequent epitaxial layer. In addition, it also helps to improve the material adhesion and provide a flatter and more uniform growth platform for the top structure.

[0056] The total number of layers of the multi-quantum well layer 55 is 2, including a blue multi-quantum well layer 551 and a green multi-quantum well layer 552. The foundation of wide color gamut LED is laid by having a blue multi-quantum well layer 51 and a green multi-quantum well layer 52. Blue light is the main excitation source of LED light, while green light can widen the color gamut and improve color saturation. The combination of the two can initially achieve good coverage of the blue and green regions.

[0057] The packaging mechanism includes a bracket cup 2, which is made of a transparent material. The bracket cup 2 is fixedly connected to the bracket 1 and is sleeved outside the packaging glue 3. The bracket cup 2 provides physical support for the packaging glue 3 and is made of a transparent material. The bracket cup 2 can serve as an optical channel to allow the light emitted by the LED chip and the light converted by the phosphor to be transmitted smoothly without affecting the light effect and optimizing the light distribution.

[0058] The positive and negative electrodes of the LED chip 5 are both welded with bonding wires 7, and the material of the bonding wires 7 is one of gold wire, silver wire, copper wire, aluminum wire or alloy wire, and one end of the bonding wires 7 is fixedly connected to the bracket 1, and the bracket 1 is electrically connected to the LED chip 5 through the bonding wires 7. The bonding wires 7 enable current to be transmitted from the external circuit to the LED chip 5 via the bracket 1, activating the PN junction and generating light.

[0059] A surface of the LED chip 5 that contacts the bracket 1 is coated with a bonding adhesive 6 , and the LED chip 5 is fixedly connected to the bracket 1 through the bonding adhesive 6 , and the material of the bonding adhesive 6 is silicone.

[0060] A plurality of the blue multi-quantum well layers 551 and a plurality of the green multi-quantum well layers 552 are stacked alternately. By alternately arranging the blue and green multi-quantum well layers in the structure, not only can the efficient emission of each band be obtained, but also the fine tuning and expansion of the spectrum can be achieved through the superposition effect of the two. Alternating the stacking of multi-quantum well layers of different wavelengths helps to improve the absorption and conversion efficiency of light. The blue light layer is responsible for the basic high-intensity excitation, and the green light layer supplements and adjusts the color temperature. The synergistic effect of the two not only ensures high brightness output, but also makes the color distribution more uniform and natural, reducing color deviation.

[0061] The implementation method of the second embodiment is as follows:

[0062] The difference between Example 2 and Example 1 is that the type of the LED chip 5 is a flip chip, the electrode of the LED chip 5 faces the bracket 1, and the side of the LED chip 5 in contact with the bracket 1 is coated with a bonding glue 6, and the bonding glue 6 is solder paste. The LED chip 5 is fixedly connected and electrically connected to the bracket 1 through the solder paste, and the material of the substrate 51 is sapphire. The sapphire substrate has extremely high chemical stability and thermal stability, and is suitable for the high temperature environment during the LED growth process.

[0063] The implementation method of the third embodiment is as follows:

[0064] The difference between the third embodiment and the first embodiment is that the total number of layers of the multi-quantum well layer 55 is 5-10 layers. By adjusting the total number of layers of the multi-quantum well layer, the light output intensity and spectral characteristics of the LED can be adjusted. The range of 5 to 10 layers can ensure sufficient quantum wells to improve the luminous efficiency, while avoiding the increase in complexity and possible decrease in efficiency caused by excessive stacking.

[0065] Increasing the number of multi-quantum well layers to 5-10 layers means that more light-emitting units can contribute to the overall light output, providing the possibility of finer spectrum adjustment. More quantum well layers can increase the chances of photon generation, thereby improving luminous efficiency. More quantum well layers provide a wider modulation space, and the spectrum can be finely tuned by adjusting the thickness of different layers, material ratios, and In content, etc., to achieve a wider color gamut and higher color saturation. The multi-quantum well layer 55 is in the range of 5-10 layers, designed to ensure performance improvements without sacrificing production efficiency or adding excessive complexity.

[0066] The implementation method of the fourth embodiment is as follows:

[0067] The difference between Example 4 and Example 1 is that the color of the fluorescent powder 4 is yellow. The yellow fluorescent powder can work together with the directly emitted blue light and green light to supplement the yellow part of the light source. It can also indirectly synthesize white light with blue light or synthesize richer intermediate colors with green and blue light to enhance the overall color saturation and naturalness.

[0068] In summary, when the LED lamp beads made of the packaging structure proposed by the utility model are powered on and emit light, the spectrum composed of the blue light of the chip, the green light of the chip, and the red phosphor, the NTSC color gamut can reach 100%-130%, which is 5%-65% higher than the color gamut of the blue light excitation phosphor, close to the color gamut of the pure chip RGB solution. At the same time, the color gamut of the utility model solution is 5%-15% lower than the color gamut of the pure chip RGB solution, but the cost can be reduced by 30%-60%; in addition, the color gamut of this solution is equivalent to that of the BG chip with phosphor solution, but due to fewer chips, the process time and production risks can be effectively reduced. The packaging structure, color gamut and life of this solution can be closer to the RGB solution of the pure chip, but the cost can be greatly reduced. At the same time, compared with the RGB solution of the pure chip, the driving solution of the application end of the packaging structure of this solution will be simpler, and the electrical design solution of the substrate will also be simpler, saving design costs, material production costs, and improving production yields. In addition, the color gamut of this solution is equivalent to that of the BG chip with phosphor solution, but due to fewer chips, the process time and production risks can be effectively reduced.

[0069] It should be understood that the terms "first", "second", etc. are used in the present invention to describe various information, but such information should not be limited to these terms, and these terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present invention, the "first" information may also be referred to as the "second" information, and similarly, the "second" information may also be referred to as the "first" information. In addition, the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0070] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the protection scope of the present invention.

Claims

1. A high color gamut LED packaging structure, characterized in that: The invention comprises a bracket (1), wherein the function of the bracket (1) is to provide physical support and electrical connection for a component mounted on the bracket (1), an LED chip (5) is mounted on the top surface of the bracket (1), and a packaging mechanism is provided on the outer shell of the LED chip (5), wherein the packaging mechanism comprises a packaging glue (3), and phosphor (4) is mixed in the packaging glue (3); The LED chip (5) comprises a multi-quantum well layer (55), the multi-quantum well layer (55) is used to generate light of different wavelengths, and the multi-quantum well layer (55) comprises a plurality of blue light multi-quantum well layers (551) and a plurality of green light multi-quantum well layers (552); The blue light multi-quantum well layer (551) and the green light multi-quantum well layer (552) are both composed of an InGaN barrier layer and an InGaN well layer. The thickness of the InGaN barrier layer of the green light multi-quantum well layer (552) is 5-25 nm, and the emission wavelength is 515-550 nm. The thickness of the InGaN well layer of the green light multi-quantum well layer (552) is 1-7 nm. The thickness of the InGaN barrier layer of the blue light multi-quantum well layer (551) is 5-25 nm, and the emission wavelength is 440-470 nm. The thickness of the InGaN well layer of the blue light multi-quantum well layer (551) is 1-7 nm.

2. The high color gamut LED packaging structure according to claim 1, characterized in that: A P-type GaN layer (56) is arranged above the multi-quantum well layer (55), and an N-type GaN layer (54) is arranged below the multi-quantum well layer (55); the N-type GaN layer (54) functions to provide electrons, and the P-type GaN layer (56) functions to provide holes; the P-type GaN layer (56) and the N-type GaN layer (54) together form a PN junction.

3. The high color gamut LED packaging structure according to claim 2, characterized in that: The LED chip (5) comprises a substrate (51), a connection layer located between the substrate (51) and an N-type GaN layer (54), the connection layer comprising a non-doped GaN layer (53) located below the N-type GaN layer (54), and a GaN buffer layer (52) located between the non-doped GaN layer (53) and the substrate (51).

4. The high color gamut LED packaging structure according to claim 1, characterized in that: The total number of layers of the multi-quantum well layer (55) is at least two, including a blue light multi-quantum well layer (551) and a green light multi-quantum well layer (552).

5. The high color gamut LED packaging structure according to claim 1, characterized in that: The packaging mechanism comprises a support cup (2), the support cup (2) being made of a transparent or opaque material, the support cup (2) being fixedly connected to the support (1), and the support cup (2) being sleeved outside the packaging glue (3).

6. The high color gamut LED packaging structure according to claim 1, characterized in that: The positive electrode and the negative electrode of the LED chip (5) are both welded with bonding wires (7), one end of the bonding wire (7) is fixedly connected to the bracket (1), and the bracket (1) is electrically connected to the LED chip (5) via the bonding wire (7).

7. The high color gamut LED packaging structure according to claim 1, characterized in that: A surface of the LED chip (5) in contact with the bracket (1) is coated with a crystal-bonding adhesive (6), and the LED chip (5) is fixedly connected to the bracket (1) via the crystal-bonding adhesive (6).

8. The high color gamut LED packaging structure according to claim 1, characterized in that: The color of the fluorescent powder (4) is red.

9. The high color gamut LED packaging structure according to claim 1, characterized in that: A plurality of the blue light multi-quantum well layers (551) and a plurality of the green light multi-quantum well layers (552) are alternately stacked.

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