Aluminum substrate cooling sheet

Abstract

The utility model relates to the field of semiconductor technology, specifically an aluminum substrate cooling sheet, including a device body, the device body including a metal base for conducting heat, an insulating layer for electrical isolation, a copper foil component for providing a conductive function, and a semiconductor component electrically connected to the copper foil component so as to transfer heat, the copper foil component being attached to the metal base, and the metal base being made of aluminum. The utility model directly attaches the copper foil component to the metal base, without the need to additionally open a mounting groove for fixing the copper foil component, and effectively solves the problem that during the manufacturing process of the aluminum substrate, a mounting groove is usually opened on the metal base to fix the circuit layer, but this method is particularly inconvenient and difficult during operation, especially when the aluminum substrate is small in size, it is difficult to accurately open the mounting groove, resulting in low production efficiency and low yield rate.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an aluminum substrate cooling sheet. Background Art

[0002] Aluminum substrate cooling sheet is a highly efficient cooling component. It integrates thermocouples and other devices on the aluminum substrate, and uses the thermoelectric effect to generate temperature difference under the action of electric current to achieve efficient cooling and heat dissipation of microelectronic devices. Aluminum substrate cooling sheet can steadily reduce the temperature of the equipment and ensure that the equipment operates in the best working state, thereby improving the performance and reliability of the equipment and extending its service life.

[0003] The aluminum substrate refrigeration plate includes an aluminum substrate structure. The aluminum substrate is generally composed of a three-layer structure: a circuit layer, an insulating layer and a metal base layer. During the manufacturing process, the circuit layer is usually installed on the surface of the metal base layer to form a complete circuit structure. The existing practice is to open a mounting groove on the metal base layer to fix the circuit layer. However, this method is particularly inconvenient and difficult during operation, especially when the aluminum substrate is small in size. It is difficult to accurately open the mounting groove, resulting in low production efficiency and low yield rate.

[0004] The utility model is proposed in view of the deficiencies in the prior art. Utility Model Content

[0005] In view of the above-mentioned existing aluminum substrate, during the manufacturing process, a mounting groove is usually opened on the metal base layer to fix the circuit layer. However, this method is particularly inconvenient and difficult during the operation. Especially when the aluminum substrate is small in size, it is difficult to accurately open the mounting groove, resulting in low production efficiency and low yield rate. The technical solution adopted by the utility model to solve the technical problem is:

[0006] An aluminum substrate cooling sheet comprises a device body, wherein the device body comprises a metal base layer for conducting heat, an insulating layer for electrical isolation, a copper foil component for providing a conductive function, and a semiconductor component electrically connected to the copper foil component so as to transfer heat, wherein the copper foil component is attached to the metal base layer, and the metal base layer is made of aluminum.

[0007] Further, the metal base layer includes a first aluminum base layer and a second aluminum base layer arranged corresponding to the first aluminum base layer, the copper foil assembly includes a first copper foil assembly located on the side of the first aluminum base layer close to the semiconductor assembly, and a second copper foil assembly located on the side of the second aluminum base layer close to the semiconductor assembly, the insulating layer includes a first insulating layer located between the first aluminum base layer and the first copper foil assembly, and a second insulating layer located between the second aluminum base layer and the second copper foil assembly, and the semiconductor assembly is located between the first copper foil assembly and the second copper foil assembly.

[0008] Furthermore, the first aluminum base layer has a length L1 and a width W1 in the horizontal direction, and a height H1 in the vertical direction, and 1.5 cm≤L1≤3.5 cm, 1.5 cm≤W1≤3.5 cm, and 0.05 cm≤H1≤1 cm.

[0009] Furthermore, the first aluminum base layer has a horizontal length L1=2 cm, a width W1=2 cm, and a vertical height H1=0.08 cm.

[0010] Furthermore, the first copper foil assembly is composed of a plurality of rectangular copper foils arranged at intervals, each of the copper foils has a length L2 and a width W2 in the horizontal direction, and a height H2 in the vertical direction, 0.1 cm ≤ L2 ≤ 0.3 cm, 0.3 cm ≤ W2 ≤ 0.5 cm, and 0.01 cm ≤ H2 ≤ 0.05 cm.

[0011] Furthermore, each of the copper foils has a horizontal length L2=0.12 cm, a width W2=0.31 cm, and a vertical height H2=0.01 cm.

[0012] Furthermore, the second copper foil assembly consists of a plurality of first copper foils arranged parallel to each of the copper foils, and a plurality of second copper foils arranged perpendicular to the first copper foils, each of the second copper foils having a length L3 and a width W3 in the horizontal direction and a height H3 in the vertical direction, L3=0.31cm, a width W3=0.12cm, and a height H3=0.01cm in the vertical direction.

[0013] Furthermore, the semiconductor component includes a plurality of P-type semiconductors and N-type semiconductors arranged at staggered intervals, and the copper foil, the first copper foil and the second copper foil are arranged in a "bow" shape, one end of the P-type semiconductor is connected to one end of the copper foil, and the other end of the P-type semiconductor is connected to one end of the first copper foil or one end of the second copper foil, one end of the N-type semiconductor is connected to the other end of the copper foil, and the other end of the N-type semiconductor is connected to the other end of the first copper foil or the other end of the second copper foil, and the copper foil and the first copper foil are connected through the P-type semiconductor and the N-type semiconductor, or the copper foil and the second copper foil are connected through the P-type semiconductor and the N-type semiconductor.

[0014] Furthermore, any vertical distance between the first copper foil assembly and the second copper foil assembly is equal.

[0015] Furthermore, the first insulating layer and the second insulating layer are made of one of epoxy resin, polyimide or grafted polyethylene.

[0016] The beneficial effects of the utility model are as follows:

[0017] 1. The utility model directly attaches the copper foil assembly to the metal base layer, without the need to open an additional installation groove for fixing the copper foil assembly, which effectively solves the problem that during the manufacturing process of the aluminum substrate, a mounting groove is usually opened on the metal base layer to fix the circuit layer. However, this method is particularly inconvenient and difficult during operation, especially when the aluminum substrate is small in size, it is difficult to accurately open the mounting groove, resulting in low production efficiency and low yield rate.

[0018] 2. By using aluminum substrate cooling sheets instead of traditional ceramic substrate cooling sheets, aluminum has excellent thermal conductivity and can quickly transfer heat from the circuit layer to the external environment, effectively preventing electronic components from overheating; secondly, the density of aluminum is relatively small, so that aluminum substrate cooling sheets are lighter than ceramic substrate cooling sheets.

[0019] The present invention will be further described below in conjunction with the accompanying drawings and specific implementation methods. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic diagram of the structure of an aluminum substrate refrigeration sheet of the utility model;

[0021] Figure 2 This is an exploded schematic diagram of an aluminum substrate refrigeration sheet of the utility model;

[0022] Figure 3 for Figure 2 An enlarged schematic diagram of the labeled section B;

[0023] Figure 4 It is a schematic diagram of the structure of the first aluminum base layer and the first copper foil assembly connected to each other in the utility model;

[0024] Figure 5 It is a schematic diagram of the structure of the second aluminum base layer and the second copper foil assembly connected to each other in the utility model;

[0025] Figure 6 It is a schematic structural diagram of the first aluminum base layer and the second aluminum base layer of the utility model. DETAILED DESCRIPTION

[0026] The implementation modes of the present utility model are described in detail below in conjunction with the accompanying drawings.

[0027] like Figures 1 to 6 An aluminum substrate cooling sheet shown includes a device body 1, wherein the device body 1 includes a metal base layer 2 for conducting heat, an insulating layer 3 for electrical isolation, a copper foil component 4 for providing a conductive function, and a semiconductor component 5 electrically connected to the copper foil component 4 so as to transfer heat, wherein the copper foil component 4 is attached to the metal base layer 2, and the metal base layer 2 is made of aluminum;

[0028] The utility model discloses an aluminum substrate cooling plate, which directly attaches a copper foil component to a metal base layer without the need to additionally open a mounting groove for fixing the copper foil component. This effectively solves the problem that during the manufacturing process of the aluminum substrate, mounting grooves are usually opened on the metal base layer to fix the circuit layer. However, this method is particularly inconvenient and difficult in the operation process, especially when the aluminum substrate is small in size, it is difficult to accurately open the mounting grooves, resulting in low production efficiency and low yield rate.

[0029] Optionally, in some embodiments, the metal base layer 2 may be made of copper.

[0030] Furthermore, as a preferred method but not a limitation of the present invention, the metal base layer 2 is made of aluminum. Aluminum has excellent thermal conductivity and can quickly transfer heat from the circuit layer to the external environment, effectively preventing overheating of electronic components. Secondly, the density of aluminum is relatively small, so that the aluminum substrate refrigeration plate is lighter than the ceramic substrate refrigeration plate. Finally, aluminum has a lower manufacturing cost than copper.

[0031] Optionally, the copper foil assembly 4 can be attached to the metal base layer 2 using a special adhesive, and the adhesive needs to have good temperature resistance and electrical insulation properties.

[0032] Optionally, the copper foil assembly 4 and the metal base layer 2 can be tightly bonded together by high temperature and pressure.

[0033] Optionally, the copper foil assembly 4 and the metal base layer 2 may be tightly attached by welding.

[0034] Optionally, the aluminum substrate can be a single-layer board, a double-layer board, or a multi-layer board.

[0035] Specifically, the single-layer board is connected in sequence by a semiconductor component 5, a copper foil component 4, an insulating layer 3 and a metal base layer 2; the double-layer board is connected in sequence by a metal base layer 2, an insulating layer 3, a copper foil component 4, a semiconductor component 5, a copper foil component 4, an insulating layer 3 and a metal base layer 2; the multi-layer board is connected alternately by multiple layers of metal base layers 2, multiple layers of insulating layers 3, copper foil components 4 and semiconductor components 5.

[0036] like Figures 1 to 6The metal base layer 2 shown includes a first aluminum base layer 21 and a second aluminum base layer 22 corresponding to the first aluminum base layer 21. The copper foil assembly 4 includes a first copper foil assembly 41 located on a side of the first aluminum base layer 21 close to the semiconductor assembly 5 and a second copper foil assembly 42 located on a side of the second aluminum base layer 22 close to the semiconductor assembly 5. The insulating layer 3 includes a first insulating layer 31 located between the first aluminum base layer 21 and the first copper foil assembly 41 and a second insulating layer 32 located between the second aluminum base layer 22 and the second copper foil assembly 42. The semiconductor assembly 5 is located between the first copper foil assembly 41 and the second copper foil assembly 42.

[0037] Furthermore, as a preferred method but not a limitation of the utility model, the first aluminum base layer 21, the first insulating layer 31, the first copper foil assembly 41, the semiconductor assembly 5, the second copper foil assembly 42, the second insulating layer 32 and the second aluminum base layer 22 are connected in sequence, which is beneficial to layered heat conduction and heat dissipation. The heat generated between the first copper foil assembly 41, the semiconductor assembly 5 and the second copper foil assembly 42 can be dispersed in two different directions of the first aluminum base layer 21 and the second aluminum base layer 22, thereby improving the heat dissipation efficiency.

[0038] Furthermore, the provision of the first insulating layer 31 and the second insulating layer 32 ensures electrical insulation between the first aluminum base layer 21 and the first copper foil assembly 41 , the second aluminum base layer 22 and the second copper foil assembly 42 , which helps to reduce the risk of failure due to electrical short circuit.

[0039] Furthermore, the semiconductor component 5 is located between the first copper foil component 41 and the second copper foil component 42, so that the structure is more compact, effectively saving the layout space of the circuit board, and facilitating the realization of more complex circuit design and higher integration within a limited space.

[0040] Optionally, the first aluminum base layer 21 and the second aluminum base layer 22 are symmetrically arranged, and the first insulating layer 31 and the second insulating layer 32 are symmetrically arranged, which helps to achieve balance and symmetry of the circuit structure. This symmetry can provide better electrical performance and signal transmission balance in circuit design, while helping to reduce the adverse effects of mechanical stress on the circuit and improve the stability and reliability of the circuit.

[0041] Specifically, a semiconductor component 5 is arranged between the first copper foil component 41 and the second copper foil component 42. One end of the semiconductor component 5 can be cooled, and the other end of the semiconductor component 5 generates heat. When the cooling end of the semiconductor component 5 is close to the first aluminum-based layer 21, the heat generated by the semiconductor component 5 is close to the second aluminum-based layer 22, so that the heat generated by the semiconductor component 5 is dissipated to the external environment through the second aluminum-based layer 22, and the user achieves a cooling effect by using the first aluminum-based layer 21; similarly, when the cooling end of the semiconductor component 5 is close to the second aluminum-based layer 22, the heat generated by the semiconductor component 5 is close to the first aluminum-based layer 21, so that the heat generated by the semiconductor component 5 is dissipated to the external environment through the first aluminum-based layer 21, and the user achieves a cooling effect by using the second aluminum-based layer 22.

[0042] like Figures 1 to 6 The first aluminum base layer 21 shown has a length L1 and a width W1 in the horizontal direction and a height H1 in the vertical direction, 1.5 cm ≤ L1 ≤ 3.5 cm, 1.5 cm ≤ W1 ≤ 3.5 cm, 0.05 cm ≤ H1 ≤ 1 cm;

[0043] Furthermore, by defining L1, W1 and H1 within appropriate ranges, the first aluminum-based layer 21 can effectively transfer heat from the semiconductor component 5 to the external environment.

[0044] Furthermore, by limiting L1, W1 and H1 within appropriate ranges, the first aluminum base layer 21 integrates electronic components and circuits, which is beneficial to improving the integration and reliability of the system; secondly, under the premise of ensuring performance, the smaller size can reduce material costs and production costs and improve economic benefits.

[0045] Furthermore, by limiting L1, W1 and H1 within appropriate ranges, it is beneficial to improve production efficiency and product quality.

[0046] like Figures 1 to 6 The first aluminum base layer 21 shown has a horizontal length L1=2 cm, a width W1=2 cm, and a vertical height H1=0.08 cm;

[0047] Specifically, the second aluminum-based layer 22 has the same size as the first aluminum-based layer 21 .

[0048] Furthermore, L1=2cm, W1=2cm, that is, the cross-section of the first aluminum base layer 21 is square. In small electronic components, the setting of L1=2cm, W1=2cm is conducive to ensuring that heat can be transferred from the semiconductor component to the external environment. The setting of H1=0.08cm can provide a heat conduction path while maintaining a small resistance, thereby ensuring that heat can be quickly transferred from the heat source to the heat dissipation surface.

[0049] Furthermore, the compact size makes the entire aluminum substrate smaller in physical size, which is suitable for application scenarios with limited space and helps to improve the flexibility and practicality of the device.

[0050] Furthermore, the smaller size reduces material costs, simplifies the manufacturing process, and helps improve production efficiency.

[0051] like Figures 1 to 6 The first copper foil assembly 41 shown is composed of a plurality of rectangular copper foils 411 arranged at intervals, each of the copper foils 411 has a length L2 and a width W2 in the horizontal direction, and a height H2 in the vertical direction, 0.1 cm ≤ L2 ≤ 0.3 cm, 0.3 cm ≤ W2 ≤ 0.5 cm, 0.01 cm ≤ H2 ≤ 0.05 cm;

[0052] Manufacturing process of copper foil: First, the metal base needs to be prepared to ensure that the surface of the metal base is flat and clean to ensure the adhesion and stability of the copper foil; second, the copper sheet is attached to the surface of the metal base, usually adhesives or hot pressing can be used to combine the copper sheet and the metal base; then, according to the design requirements, machines and equipment such as CNC engraving machines, laser cutting machines, etc. are used to automatically process the copper sheet, and the copper sheet is engraved or cut into several pieces of copper foil on the surface of the metal base to form the layout and structure required by the design; finally, after the processing is completed, the copper foil needs to be cleaned to ensure that the surface is clean and dust-free, and inspection is carried out at the same time to ensure that the quality and shape of the copper foil meet the requirements.

[0053] Furthermore, the size design of the copper foil 411 ensures that the current can be evenly distributed on the copper foil 411, avoiding local overheating caused by current concentration, which is beneficial to improving the stability and reliability of the circuit.

[0054] like Figures 1 to 6 Each of the copper foils 411 shown has a horizontal length of L2=0.12 cm, a width of W2=0.31 cm, and a vertical height of H2=0.01 cm;

[0055] Furthermore, by precisely controlling the size of the copper foil 411 , the electromagnetic performance of the circuit can be optimized, signal interference and electromagnetic radiation can be reduced, and the stability and reliability of signal transmission can be improved.

[0056] Furthermore, the copper foil 411 has an appropriate height and surface area, which is beneficial to the heat dissipation and distribution, maintains a stable operating temperature of the circuit components, and improves the thermal management effect of the circuit.

[0057] Furthermore, designing a reasonable size is conducive to reducing material waste, while simplifying the manufacturing process, helping to reduce costs and improve production efficiency.

[0058] like Figures 1 to 6 The second copper foil assembly 42 shown is composed of a plurality of first copper foils 421 arranged parallel to each of the copper foils 411, and a plurality of second copper foils 422 arranged perpendicular to the first copper foils 421, each of the second copper foils 422 has a length L3 and a width W3 in the horizontal direction, and a height H3 in the vertical direction, L3=0.31cm, a width W3=0.12cm, and a height H3=0.01cm in the vertical direction;

[0059] Furthermore, the first copper foil 421 and the copper foil 411 are arranged in parallel and offset, and the first copper foil 421 and the copper foil 411 have the same size.

[0060] Furthermore, the width of the second copper foil 422 is equal to the length of the first copper foil 421, and the length of the second copper foil 422 is equal to the width of the first copper foil 421, so that the shape and size of the second copper foil 422 are the same as those of the first copper foil 421, which helps to maintain the consistency of the second copper foil 422, the first copper foil 421 and the copper foil 411, and is beneficial to simplify the manufacturing process and effectively improve production efficiency.

[0061] like Figures 1 to 6 The semiconductor component 5 shown includes a plurality of P-type semiconductors 51 and N-type semiconductors 52 arranged at staggered intervals. The copper foil 411, the first copper foil 421 and the second copper foil 422 are arranged in a "bow" shape. One end of the P-type semiconductor 51 is connected to one end of the copper foil 411, and the other end of the P-type semiconductor 51 is connected to one end of the first copper foil 421 or one end of the second copper foil 422. One end of the N-type semiconductor 52 is connected to the other end of the copper foil 411, and the other end of the N-type semiconductor 52 is connected to the other end of the first copper foil 421 or the other end of the second copper foil 422. The copper foil 411 and the first copper foil 421 are connected through the P-type semiconductor 51 and the N-type semiconductor 52, or the copper foil 411 and the second copper foil 422 are connected through the P-type semiconductor 51 and the N-type semiconductor 52.

[0062] Working principle: When one end of the P-type semiconductor 51 is connected to the copper foil 411, the other end of the P-type semiconductor 51 is connected to one end of the first copper foil 421, the other end of the first copper foil 421 is connected to the N-type semiconductor 52, and the other end of the N-type semiconductor 52 is connected to one end of the adjacent copper foil 411, the charge carriers belong to different energy levels in different materials, and the N-type semiconductor is larger than the metal conductor and larger than the P-type semiconductor. When the electrons move from the high energy level to the low energy level, they will release excess heat, and vice versa, they need to absorb heat from the outside for cooling. When power is turned on, electrons flow from the copper foil 411 to the P-type semiconductor 51, and the electrons release heat from the high energy level to the low energy level, that is, one end of the copper foil 411 releases heat; the electrons continue to flow from the P-type semiconductor to the P-type semiconductor. The conductor 51 flows to one end of the first copper foil 421, and the electrons are transferred from the low energy level to the high energy level, that is, the end of the first copper foil 421 connected to the P-type semiconductor 51 absorbs heat to achieve a cooling effect; the electrons flow from the first copper foil 421 to one end of the N-type semiconductor 52, and the electrons are transferred from the low energy level to the high energy level, that is, the end of the first copper foil 421 connected to the N-type semiconductor 52 absorbs heat to achieve a cooling effect; finally, the electrons flow from the N-type semiconductor 52 to the adjacent copper foil 411, and the electrons are transferred from the high energy level to the low energy level, and one end of the copper foil 411 continues to release heat, thereby achieving the effect of heat release on one side of the first copper foil assembly 41, the heat is dissipated to the external environment through the first aluminum base layer 21, and the cooling effect on one side of the second copper foil assembly 42. Similarly, the connection principle between the copper foil 411 and the second copper foil 422 is the same as the connection principle between the copper foil 411 and the first copper foil 421.

[0063] like Figures 1 to 6 Any vertical distance between the first copper foil assembly 41 and the second copper foil assembly 42 is equal;

[0064] Furthermore, the setting of equal arbitrary vertical distances between the first copper foil assembly 41 and the second copper foil assembly 42 is conducive to simplifying the connection structure of the circuit, reducing the complexity of the circuit, and thus effectively improving the maintainability and reliability of the circuit.

[0065] Furthermore, setting any vertical distance between the first copper foil assembly 41 and the second copper foil assembly 42 to be equal helps to optimize the current transmission path, reduce the resistance and voltage loss in the circuit, and improve the efficiency and performance of the circuit.

[0066] Furthermore, setting any equal vertical distance between the first copper foil assembly 41 and the second copper foil assembly 42 facilitates the transfer and distribution of heat, helps maintain a suitable operating temperature of the semiconductor assembly 5, improves the thermal management effect of the circuit, and extends the service life of the electronic device.

[0067] like Figures 1 to 6 The first insulating layer 31 and the second insulating layer 32 are made of epoxy resin, polyimide or grafted polyethylene;

[0068] Furthermore, as a preferred embodiment of the present invention but not a limitation, the first insulating layer 31 and the second insulating layer 32 are both made of epoxy resin, which has good thermal conductivity, high insulation strength, and good adhesion.

[0069] The implementation method of this embodiment is as follows:

[0070] An aluminum substrate refrigeration sheet comprises a device body 1, wherein the device body 1 comprises a metal base layer 2, an insulating layer 3, a copper foil assembly 4 and a semiconductor assembly 5. The copper foil assembly 4 can be directly attached to the metal base layer 2 without the need to additionally provide a mounting groove for fixing the copper foil assembly, thereby effectively solving the problem that during the manufacturing process of the aluminum substrate, mounting grooves are usually provided on the metal base layer to fix a circuit layer, but this method is particularly inconvenient and difficult during operation, especially when the aluminum substrate is small in size, it is difficult to accurately provide the mounting grooves, resulting in low production efficiency and low yield rate. The metal base layer 2 includes a first aluminum base layer 21 and a second aluminum base layer 22 that are symmetrically arranged. The first aluminum base layer 21 has a length L1=2 cm in the horizontal direction, a width W1=2 cm, and a height H1=0.08 cm in the vertical direction. The copper foil assembly 4 includes a first copper foil assembly 41 and a second copper foil assembly 42. A first insulating layer 31 is provided between the first aluminum base layer 21 and the first copper foil assembly 41. A second insulating layer 32 is provided between the second aluminum base layer 22 and the second copper foil assembly 42. The first copper foil assembly 41 includes a plurality of spaced copper foils 411. The second copper foil assembly 42 includes a plurality of spaced copper foils 411. A first copper foil 421 parallel to and staggered with the copper foil 411, a plurality of second copper foils 422 parallel to the copper foil 411 and perpendicular to the second copper foil 421, the copper foil 411 has a horizontal length L2=0.12 cm, a width W2=0.31 cm, and a vertical height H2=0.01 cm, the size of the first copper foil 421 is the same as the size of the copper foil 411, the second copper foil 422 has a horizontal length L3=0.31 cm, a width W3=0.12 cm, and a vertical height H3=0.01 cm, and the semiconductor component 5 includes an interval staggered arrangement The P-type semiconductor 51 and the N-type semiconductor 52 are connected. One end of the P-type semiconductor 51 is connected to the copper foil 411, and the other end of the P-type semiconductor 51 is connected to one end of the first copper foil 421. The other end of the first copper foil 421 is connected to the N-type semiconductor 52. The other end of the N-type semiconductor 52 is connected to one end of the adjacent copper foil 411. When power is turned on, electrons flow from the copper foil 411 to the P-type semiconductor 51, and the electrons release heat from the high energy level to the low energy level, that is, the heat is released at one end of the copper foil 411; the electrons continue to flow from the P-type semiconductor 51 to one end of the first copper foil 421, and the electrons transfer from the low energy level to the high energy level, that is, the first copper foil 421. The end of the foil 421 connected to the P-type semiconductor 51 absorbs heat to achieve a cooling effect; electrons flow from the first copper foil 421 to one end of the N-type semiconductor 52, and the electrons go from a low energy level to a high energy level, that is, the end of the first copper foil 421 connected to the N-type semiconductor 52 absorbs heat to achieve a cooling effect; finally, electrons flow from the N-type semiconductor 52 to the adjacent copper foil 411, and the electrons go from a high energy level to a low energy level, and one end of the copper foil 411 continues to release heat, thereby achieving heat release on one side of the first copper foil assembly 41, and the heat is dissipated to the external environment through the first aluminum base layer 21, and the cooling effect is achieved on one side of the second copper foil assembly 42.Similarly, the connection principle between the copper foil 411 and the second copper foil 422 is the same as the connection principle between the copper foil 411 and the first copper foil 421 .

[0071] The above examples are only used to further illustrate the technical content of the utility model, so that readers can understand it more easily, but it does not mean that the implementation methods of the utility model are limited to this. Any technical extension or re-creation made based on the utility model is protected by the utility model. The protection scope of the utility model shall be based on the claims.

Claims

1. An aluminum substrate refrigeration sheet, comprising a device body (1), characterized in that: The device body (1) comprises a metal base layer (2) for conducting heat, an insulating layer (3) for electrical isolation, a copper foil component (4) for providing a conductive function, and a semiconductor component (5) electrically connected to the copper foil component (4) so ​​as to transfer heat, wherein the copper foil component (4) is attached to the metal base layer (2), and the metal base layer (2) is made of aluminum.

2. The aluminum substrate refrigeration sheet according to claim 1, characterized in that: The metal base layer (2) comprises a first aluminum base layer (21) and a second aluminum base layer (22) arranged corresponding to the first aluminum base layer (21); the copper foil assembly (4) comprises a first copper foil assembly (41) located on a side of the first aluminum base layer (21) close to the semiconductor assembly (5) and a second copper foil assembly (42) located on a side of the second aluminum base layer (22) close to the semiconductor assembly (5); the insulating layer (3) comprises a first insulating layer (31) located between the first aluminum base layer (21) and the first copper foil assembly (41) and a second insulating layer (32) located between the second aluminum base layer (22) and the second copper foil assembly (42); and the semiconductor assembly (5) is located between the first copper foil assembly (41) and the second copper foil assembly (42).

3. The aluminum substrate refrigeration sheet according to claim 2, characterized in that: The first aluminum base layer (21) has a length L1 and a width W1 in the horizontal direction, and a height H1 in the vertical direction, 1.5 cm≤L1≤3.5 cm, 1.5 cm≤W1≤3.5 cm, and 0.05 cm≤H1≤1 cm.

4. The aluminum substrate refrigeration sheet according to claim 3, characterized in that: The first aluminum base layer (21) has a length L1=2 cm and a width W1=2 cm in the horizontal direction, and a height H1=0.08 cm in the vertical direction.

5. The aluminum substrate refrigeration sheet according to claim 2, characterized in that: The first copper foil assembly (41) is composed of a plurality of rectangular copper foils (411) arranged at intervals, each of the copper foils (411) having a length L2 and a width W2 in the horizontal direction and a height H2 in the vertical direction, 0.1 cm≤L2≤0.3 cm, 0.3 cm≤W2≤0.5 cm, and 0.01 cm≤H2≤0.05 cm.

6. The aluminum substrate refrigeration sheet according to claim 5, characterized in that: Each of the copper foils (411) has a length L2=0.12 cm and a width W2=0.31 cm in the horizontal direction, and a height H2=0.01 cm in the vertical direction.

7. The aluminum substrate refrigeration sheet according to claim 5, characterized in that: The second copper foil assembly (42) is composed of a plurality of first copper foils (421) arranged parallel to each of the copper foils (411), and a plurality of second copper foils (422) arranged perpendicular to the first copper foils (421), each of the second copper foils (422) having a length L3 and a width W3 in the horizontal direction, and a height H3 in the vertical direction, L3=0.31 cm, a width W3=0.12 cm, and a height H3=0.01 cm in the vertical direction.

8. The aluminum substrate refrigeration sheet according to claim 7, characterized in that: The semiconductor component (5) comprises a plurality of P-type semiconductors (51) and N-type semiconductors (52) arranged at staggered intervals; the copper foil (411), the first copper foil (421) and the second copper foil (422) are arranged in a "bow" shape; one end of the P-type semiconductor (51) is connected to one end of the copper foil (411); the other end of the P-type semiconductor (51) is connected to one end of the first copper foil (421) or one end of the second copper foil (422); one end of the N-type semiconductor (52) is connected to the other end of the copper foil (411); the other end of the N-type semiconductor (52) is connected to the other end of the first copper foil (421) or the other end of the second copper foil (422); the copper foil (411) and the first copper foil (421) are connected via the P-type semiconductor (51) and the N-type semiconductor (52); or the copper foil (411) and the second copper foil (422) are connected via the P-type semiconductor (51) and the N-type semiconductor (52).

9. The aluminum substrate refrigeration sheet according to claim 2, characterized in that: Any vertical distance between the first copper foil assembly (41) and the second copper foil assembly (42) is equal.

10. The aluminum substrate refrigeration sheet according to claim 2, characterized in that: The first insulating layer (31) and the second insulating layer (32) are made of one of epoxy resin, polyimide or grafted polyethylene.

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