Embedded temperature sensing structure of TFT display module

Abstract

The utility model discloses an embedded temperature sensing structure of a thin film transistor (TFT) display module, which comprises a TFT display module and a voltage detection module, the TFT display module comprises a grid driving voltage wiring terminal, the voltage detection module comprises a grid voltage detection terminal, and the grid driving voltage wiring terminal is connected with the grid voltage detection terminal. And the grid driving voltage wiring terminal is electrically connected with the grid voltage detection terminal through a first connecting line. By means of the voltage detection module, the grid voltage of the field effect transistor of the TFT display module can be monitored in real time, when the temperature rises, the grid voltage of the field effect transistor can be decreased, and therefore the VGH voltage value of the grid and the VGL voltage value of the grid can be decreased accordingly. As the carrier concentration is increased due to temperature rise, the conductivity of the field effect transistor is increased, the voltage of the grid electrode is reduced, after the voltage detection module obtains a VGH voltage value and a VGL voltage value, the voltage is measured and calculated through an external chip, and the external temperature is calculated and obtained accurately and reliably.

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