Light emitting diode and light emitting device

Abstract

The utility model belongs to the technical field of semiconductor manufacturing, and provides a light-emitting diode which comprises a light-emitting epitaxial laminated layer, a diffusion layer and a light conversion layer, the light-emitting epitaxial laminated layer can emit first light of a first wavelength and is provided with a light-emitting surface and a back surface which are oppositely arranged, the diffusion layer is located on the light-emitting epitaxial laminated layer and at least covers part of the light-emitting surface, and the light conversion layer is located on the light-emitting epitaxial laminated layer. The light conversion layer completely covers the diffusion layer and the exposed area of the light-emitting surface of the light-emitting epitaxial laminated layer, the diffusion layer can diffuse the radiation energy of the first light from the central area of the light-emitting surface to the periphery so as to achieve the light uniformizing effect, the light conversion layer is excited by the first light to generate second light with a second wavelength, and a second diffusant is arranged in the light conversion layer so as to generate second light with a second wavelength. According to the light-emitting diode, the first light and the second light can be dodging, so that the emergent light has more excellent light color uniformity, and the performance and the reliability of the light-emitting diode are improved; the utility model further provides a light-emitting device comprising the light-emitting diode.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) has the advantages of long life, small size, high efficiency, fast response speed and no pollution, and is considered to be one of the most promising light sources. LED has a wide range of applications in daily life, such as lighting, signal display, optical communication and other fields. At the same time, these applications also put forward higher requirements on the brightness, luminous efficiency and light quality of LED.

[0003] At present, the common way to realize white light LED is to combine LED chip with phosphor, and use LED chip to excite phosphor to mix to form white light. There are two specific ways: one is to use blue light LED chip to excite phosphor that emits yellow light and mix it with the light of blue light LED chip to form white light, and the other is to use near-ultraviolet LED chip to excite red, green and blue phosphor. In the process of using white light LED, it is found that white light LED on the market often has the problem of poor light color consistency and easy to have blue light ring and yellow light ring. In order to solve the above problems, this application provides a light-emitting diode and a light-emitting device. Utility Model Content

[0004] In view of the problem of poor light color consistency of white light LEDs in the prior art, the purpose of the present application is to provide a light emitting diode and a light emitting device for improving the light color uniformity of LEDs.

[0005] To achieve the above objectives and other related objectives, in a first aspect, the present application provides a light emitting diode, comprising:

[0006] A light-emitting epitaxial stack, wherein the light-emitting epitaxial stack has a light-emitting surface and a back surface that are arranged opposite to each other and a side surface connecting the light-emitting surface and the back surface, and the first light having a first wavelength radiated by the light-emitting epitaxial stack is emitted from the light-emitting surface;

[0007] A diffusion layer is formed on the light emitting surface of the light emitting epitaxial stack and covers at least a portion of the light emitting surface;

[0008] A light conversion layer is formed on the diffusion layer to convert the first light into second light with a second wavelength, and the light conversion layer completely covers the diffusion layer and an exposed area of ​​the light emitting surface.

[0009] In a second aspect, the present application further provides a light-emitting device, comprising a circuit substrate and a light-emitting device arranged on the circuit substrate, wherein the light-emitting device comprises any one of the light-emitting diodes in the aforementioned embodiments, and the light-emitting diode is electrically connected to the circuit substrate.

[0010] Compared with the prior art, the light emitting diode and the light emitting device provided by the present application have at least the following beneficial effects:

[0011] In the light-emitting diode of the present application, the light-emitting epitaxial stack can emit a first light of a first wavelength, and the diffusion layer can diffuse the radiation energy of the first light from the center to the surroundings, thereby achieving the effect of uniform light. After the first light is refracted multiple times in the diffusion layer, the first light passing through the diffusion layer becomes softer, and the light conversion layer converts part of the incident first light into a second light with a second wavelength. The second light is mixed with the first light passing through the light conversion layer to generate white light. The generated white light has better uniformity in light color and luminous flux, and effectively reduces the difference in light color between different angles, avoids the occurrence of blue aperture and yellow aperture phenomena, and improves the performance and reliability of the light-emitting diode.

[0012] In addition, the light-emitting device provided in the present application includes the light-emitting diode provided by the above technical solution, so the light-emitting device also has the above beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0014] Figure 1 Shown is a schematic diagram of the structure of a light emitting diode provided in Example 1 of the present application.

[0015] Figure 2 Display as Figure 1 An enlarged view of the structure of the M region in the light-emitting diode shown.

[0016] Figure 3 Shown is a schematic structural diagram of a light-emitting device provided in Embodiment 2 of the present application.

[0017] Reference numerals:

[0018] 1. Light-emitting device; 11. Light-emitting diode; 111. Light-emitting epitaxial stack; 1111. First semiconductor layer; 1112. Second semiconductor layer; 1113. Active layer; 112. Diffusion layer; 1121. First diffuser; 1122. First adhesive; 113. Light conversion layer; 1131. Fluorescent agent; 1132. Second diffuser; 1133. Second adhesive; 114. Current spreading layer; 115. Insulating layer; 116. Electrical connection layer; 117. Conductive layer; 118. Electrode; 2. Circuit substrate. DETAILED DESCRIPTION

[0019] In order to make the technical purpose, technical solution and technical effect of the present application clearer, the technical solution in the present application will be clearly and completely described in conjunction with the embodiments below. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the present application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0021] In the description of the present application, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0022] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. In addition, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the implementation or example are included in at least one implementation or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable scheme.

[0023] In the prior art, the implementation method of white light LED is to use LED chips to excite phosphors to mix and form white light, but the emitted white light has poor color consistency and is prone to blue and yellow light circles. Based on the above problems, the staff found that the commonly used method for preparing white light LEDs is to mix phosphor particles with organic polymers, and then coat the mixture on the LED package. Its light color distribution is jointly determined by the light intensity distribution of the LED chip and the distribution uniformity of the light conversion layer. Since the beam angle remains unchanged before and after the light color conversion, the central radiation energy of the LED chip is relatively high, and the proportion of blue light emitted by the LED chip passing through the light conversion layer is relatively high, which makes the central color temperature of the white light LED output light high and the peripheral color temperature low, resulting in poor color consistency and the problem of blue and yellow light circles.

[0024] In order to solve the above problems, the present application provides a light emitting diode, comprising:

[0025] A light-emitting epitaxial stack, wherein the light-emitting epitaxial stack has a light-emitting surface and a back surface that are arranged opposite to each other and a side surface connecting the light-emitting surface and the back surface, and the first light having a first wavelength radiated by the light-emitting epitaxial stack is emitted from the light-emitting surface;

[0026] A diffusion layer is formed on the light emitting surface of the light emitting epitaxial stack and covers at least a portion of the light emitting surface;

[0027] A light conversion layer is formed on the diffusion layer to convert the first light into second light with a second wavelength, and the light conversion layer completely covers the diffusion layer and an exposed area of ​​the light emitting surface.

[0028] The light-emitting epitaxial stack emits the first light from the light-emitting surface, and the diffusion layer diffuses the radiation energy of the first light from the center to the surroundings, thereby achieving the effect of uniform light. After the first light is refracted multiple times in the diffusion layer, the first light passing through the diffusion layer becomes softer. The light conversion layer converts part of the incident first light into second light of a second wavelength, which is mixed with the first light passing through the light conversion layer to generate white light. The generated white light has better uniformity of light color and luminous flux, and has smaller light color difference at different angles, thereby improving the light emission uniformity of the light-emitting diode.

[0029] Optionally, the light-emitting epitaxial stack includes a first semiconductor layer, an active layer, and a second semiconductor layer in sequence from the light-emitting surface to the back surface, and a surface of the first semiconductor layer away from the second semiconductor layer forms the light-emitting surface. Sufficient electrons or holes are provided to the active layer through the first semiconductor layer and the second semiconductor layer, so that the electrons and holes recombine in the active layer to radiate the first light.

[0030] Optionally, the diffusion layer at least covers the central area of ​​the light-emitting epitaxial stack light-emitting surface. The first light is mainly emitted from the light-emitting epitaxial stack light-emitting surface, and the central area of ​​the light-emitting surface has a higher radiation energy. By arranging the diffusion layer in the central area of ​​the light-emitting epitaxial stack light-emitting surface, the radiation energy of the first light emitted from the light-emitting epitaxial stack light-emitting surface can be diffused to the surroundings, thereby achieving the purpose of uniform light, making the first light emitted from the diffusion layer softer, thereby improving the light color uniformity of the light-emitting diode.

[0031] Optionally, the diffusion layer completely covers the light-emitting surface of the light-emitting epitaxial stack and the exposed area on the side of the light-emitting epitaxial stack. Most of the first light emitted by the light-emitting epitaxial stack is emitted from the light-emitting surface of the light-emitting epitaxial stack, and a small part is emitted from the side of the light-emitting epitaxial stack. By arranging the diffusion layer on the light-emitting surface and the side of the light-emitting epitaxial stack, the radiation energy of all the first light can be diffused to the surroundings to the greatest extent, ensuring that the white light emitted by the light-emitting diode is softer, and further improving the light color uniformity of the light-emitting diode.

[0032] Optionally, the diffusion layer includes a first adhesive and a first diffusing agent dispersed in the first adhesive, and the volume proportion of the first diffusing agent in the diffusion layer is 40% to 80%. By setting an appropriate amount of the first diffusing agent in the diffusion layer, the first light can be refracted multiple times in the diffusion layer, making the first light passing through the diffusion layer softer and improving the light color uniformity of the first light.

[0033] Optionally, the first diffusing agent is a light diffusing powder, and the particle size of the light diffusing powder is less than or equal to 10nm. The light diffusing powder itself is a transparent material, which can ensure that the first light can pass through, and the difference in refractive index between the light diffusing powder and the first adhesive can cause the first light to be refracted multiple times. By controlling the particle size of the light diffusing powder to be less than or equal to 10nm, the light uniformity effect of the diffusion layer can be made better.

[0034] Optionally, the light conversion layer includes a second adhesive and a fluorescent agent dispersed in the second adhesive, the volume proportion of the fluorescent agent in the light conversion layer is 50% to 80%, and the particle size of the fluorescent agent is 2 μm to 10 μm. By disposing an appropriate amount of fluorescent agent in the second adhesive and controlling the fluorescent agent to have an appropriate particle size, the conversion effect of the incident first light can be guaranteed to obtain a sufficient amount of second light of the second wavelength, thereby ensuring the light-emitting effect of the light-emitting diode.

[0035] Optionally, the light conversion layer further includes a second diffusing agent dispersed in the second adhesive, the second diffusing agent accounts for 5% to 10% of the volume of the light conversion layer, and the particle size of the second diffusing agent is less than or equal to 10 nm. By disposing an appropriate amount of the second diffusing agent in the light conversion layer and controlling the second diffusing agent to have a smaller particle size, it is possible to achieve a secondary light homogenization effect on the first light in the light conversion layer, and at the same time, achieve a light homogenization effect on the second light generated in the light conversion layer, thereby further improving the light color uniformity of the light-emitting diode while ensuring the light output effect of the light conversion layer.

[0036] Optionally, the thickness of the diffusion layer is 10 μm to 20 μm, and the thickness of the light conversion layer is greater than or equal to 40 μm. Controlling the diffusion layer to have a suitable thickness can ensure that the diffusion layer has an excellent light uniformity effect and has a small light loss. Setting the thickness of the light conversion layer to be greater than or equal to 40 μm can ensure the stimulated light emission effect of the light conversion layer, so that the light-emitting diode can effectively emit white light.

[0037] The present application also provides a light-emitting device, including a circuit substrate and a light-emitting device disposed on the circuit substrate, wherein the light-emitting device includes any one of the light-emitting diodes in the aforementioned embodiments, and the light-emitting diode is electrically connected to the circuit substrate. The light-emitting device includes the light-emitting diode of the present application, and thus also has excellent light color uniformity.

[0038] Embodiment 1

[0039] This embodiment provides a light emitting diode 11, referring to Figure 1 The light emitting diode 11 includes a light emitting epitaxial stack 111 , a diffusion layer 112 and a light conversion layer 113 .

[0040] The light-emitting epitaxial stack 111 can emit a first light of a first wavelength. The light-emitting epitaxial stack 111 has a light-emitting surface and a back surface that are relatively arranged, and a side surface connecting the light-emitting surface and the back surface. The first light is emitted from the light-emitting surface; optionally, the first wavelength is 360nm to 480nm, that is, the light-emitting epitaxial stack 111 can emit blue light or near-ultraviolet light. The diffusion layer 112 is formed on the light-emitting surface of the light-emitting epitaxial stack 111 and at least covers part of the light-emitting surface; the diffusion layer 112 covers the light-emitting surface so that the first light can be emitted into the diffusion layer 112. The diffusion layer 112 diffuses the radiation energy of the incident first light from its central area to the surrounding areas, and plays a role in homogenizing the first light, so that the first light emitted from the diffusion layer 112 is softer and has better light color consistency. The light conversion layer 113 is formed on the diffusion layer 112 and completely covers the diffusion layer 112 and the exposed area of ​​the light emitting surface. The light conversion layer 113 can convert the first light into the second light with a second wavelength. The light conversion layer 113 is arranged on the diffusion layer 112 and can receive the first light emitted from the diffusion layer 112. Under the stimulation of the incident first light, the light conversion layer 113 can emit the second light of the second wavelength. The second light is mixed with the first light passing through the light conversion layer 113 to form white light, thereby realizing the function of the light emitting diode 11 to emit white light, and the emitted white light has excellent light color uniformity and small light color difference at different angles.

[0041] The light-emitting epitaxial stack 111 includes a first semiconductor layer 1111, an active layer 1113, and a second semiconductor layer 1112 in order from the light-emitting surface to the back surface. The first semiconductor layer 1111 and the second semiconductor layer 1112 can provide sufficient electrons or holes to the active layer, so that the electrons and holes are recombined in the active layer, so that the light-emitting epitaxial stack 111 can radiate the first light of the first wavelength. Specifically, the first semiconductor layer 1111 can be an N-type semiconductor layer doped with N-type impurities, and the second semiconductor layer 1112 can be a P-type semiconductor layer doped with P-type impurities, or the first semiconductor layer 1111 can be a P-type semiconductor layer doped with P-type impurities, and the second semiconductor layer 1112 can be an N-type semiconductor layer doped with N-type impurities.

[0042] In an optional embodiment, the diffusion layer 112 covers at least the central area of ​​the light emitting surface of the light emitting epitaxial stack 111, and the light conversion layer 113 completely covers the diffusion layer 112 and the exposed area of ​​the light emitting surface. Optionally, the diffusion layer 112 can cover the central area of ​​the light emitting surface of the light emitting epitaxial stack 111, and the light conversion layer 113 completely covers the diffusion layer 112 and covers the exposed area of ​​the light emitting surface of the light emitting epitaxial stack 111; or the diffusion layer 112 covers the central area of ​​the light emitting surface and covers a part of the light emitting surface extending from the central area to the top of the light emitting epitaxial stack 111, or the diffusion layer 112 completely covers the light emitting surface of the light emitting epitaxial stack 111, and the light conversion layer 113 completely covers the diffusion layer 112 and covers part of the side surface of the light emitting epitaxial stack 111. The first light is mainly emitted from the light emitting surface of the light emitting epitaxial stack 111. The luminous flux at the center of the emitted first light is relatively high, resulting in a high color temperature at the center of the light emitting surface and a low color temperature at the periphery, thereby producing a phenomenon of blue aperture and yellow aperture. A diffusion layer 112 is provided in at least the central area of ​​the light emitting surface of the light emitting epitaxial stack 111. The radiation energy of the first light in the central area with a larger luminous flux can be diffused from the central area to the surrounding areas, thereby achieving the purpose of uniform light, thereby improving the light color uniformity of the light emitted by the light emitting diode.

[0043] In an optional embodiment, the diffusion layer 112 completely covers the light emitting surface of the light emitting epitaxial stack 111 and at least part of the side surfaces of the light emitting epitaxial stack, and the light conversion layer 113 completely covers the diffusion layer 112. Optionally, the diffusion layer 112 can completely cover the light emitting surface of the light emitting epitaxial stack 111 and part of the side surfaces of the light emitting epitaxial stack 111, and the light conversion layer 113 completely covers the diffusion layer 112 and the exposed areas on the side surfaces of the light emitting epitaxial stack 111; or the diffusion layer 112 can completely cover the light emitting surface of the light emitting epitaxial stack 111 and the exposed areas on the side surfaces of the light emitting epitaxial stack 111, and the light conversion layer 113 completely covers the diffusion layer 112. Most of the first light is emitted from the light-emitting surface of the light-emitting epitaxial stack 111, and a small part of the first light is emitted from the side of the light-emitting epitaxial stack 111. The diffusion layer 112 and the light conversion layer 113 are arranged on the light-emitting surface and the exposed area of ​​the side of the light-emitting epitaxial stack 111, which can fully homogenize the emitted first light, making the second light emitted from the light conversion layer 113 softer, further improving the light color uniformity of the light-emitting diode. Among them, part of the side of the light-emitting epitaxial stack 111 is in contact with other structural layers of the light-emitting diode 11, and the side of the light-emitting epitaxial stack 111 that is not in contact with other structural layers of the light-emitting diode 11 is the exposed area of ​​the side.

[0044] Reference Figure 2The diffusion layer 112 includes a first adhesive 1122 and a first diffusing agent 1121 dispersed in the first adhesive 1122. The first adhesive 1122 and the first diffusing agent 1121 are materials with different refractive indices. The first light incident on the diffusion layer 112 undergoes multi-layer refraction in the diffusion layer 112 through the first diffusing agent 1121, thereby making the first light passing through the diffusion layer 112 softer and the light color distribution more uniform. Optionally, both the first adhesive 1122 and the first diffusing agent 1121 are transparent materials, which can reduce the loss of the first light in the diffusion layer 112. Furthermore, the material of the first adhesive 1122 includes silica gel, etc., and the first diffusing agent 1121 is light diffusing powder. For example, the first diffusing agent 1121 can be acrylic organic light diffusing powder, styrene organic light diffusing powder, or acrylic resin light diffusing powder. Light diffusion powder has a small specific gravity, good lubricity and hydrophobicity, and the material is spherical in shape, with a particle size of micrometers, a highly concentrated particle size distribution, and excellent heat resistance, and will not have a negative impact on light transmittance and diffusion effects.

[0045] In an optional embodiment, the mass proportion of the first diffusing agent 1121 to the diffusion layer 112 is 2% to 5%. Optionally, the mass proportion of the first diffusing agent 1121 to the diffusion layer 112 may be, for example, 2%, 3%, 4%, 5%, etc.

[0046] In an optional embodiment, the diffusion layer 112 has a thickness of 10 μm to 20 μm. Optionally, the diffusion layer 112 has a thickness of, for example, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.

[0047] In an optional embodiment, the first diffusing agent 1121 is light diffusing powder, and the particle size of the light diffusing powder is less than or equal to 10 nm. Optionally, the particle size of the light diffusing powder can be, for example, 10 nm, 8 nm, 6 nm, 4 nm, etc.

[0048] In an optional embodiment, the volume proportion of the first diffusing agent 1121 to the diffusion layer 112 is 40% to 80%. Optionally, the volume proportion of the first diffusing agent 1121 may be, for example, 40%, 50%, 60%, 70%, 80%, etc.

[0049] By controlling the thickness of the diffusion layer 112 , the mass ratio of the first diffusion agent 1121 , and the particle size of the first diffusion agent 1121 , the diffusion layer 112 can have excellent diffusion effect, minimal light loss, and a relatively small diffusion layer 112 thickness.

[0050] Reference Figure 2, the light conversion layer 113 includes a second adhesive 1133 and a fluorescent agent 1131 dispersed in the second adhesive 1133, a first part of the first light emitted from the diffusion layer 112 is absorbed by the light conversion layer 113, and the other part passes through the light conversion layer 113, the fluorescent agent 1131 absorbs the first light and is excited to generate a second light of a second wavelength, the second light passes through the light conversion layer 113 and is mixed with the first light passing through the light conversion layer 113 to form white light. Optionally, the second adhesive 1133 and the fluorescent agent 1131 are both transparent materials, which can reduce the optical loss of the first light and the second light in the light conversion layer 113, further, the fluorescent agent 1131 is a fluorescent powder, and the fluorescent powder includes a rare earth doped inorganic fluorescent powder, etc. The second adhesive 1133 can be the same material as the first adhesive 1122, or a different material, for example, the material of the second adhesive 1133 can be silicone gum.

[0051] In an optional embodiment, the weight percentage of the fluorescent agent 1131 in the light conversion layer 113 is 60% to 85%. Optionally, the weight percentage of the fluorescent agent 1131 in the light conversion layer 113 can be, for example, 60%, 70%, 80%, 85%, etc.

[0052] In an optional embodiment, the particle size of the fluorescent agent 1131 is 2 μm to 10 μm. Optionally, the particle size of the fluorescent agent 1131 can be, for example, 2 μm, 3 μm, 5 μm, 7 μm, 9 μm, 10 μm, etc.

[0053] In an optional embodiment, the volume proportion of the fluorescent agent 1131 in the light conversion layer 113 is 50% to 80%. Optionally, the volume proportion of the fluorescent agent 1131 can be, for example, 50%, 60%, 70%, 80%, etc.

[0054] In an optional embodiment, the thickness of the light conversion layer 113 is greater than or equal to 40 μm. Optionally, the thickness of the light conversion layer 113 may be, for example, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

[0055] In an alternative embodiment, reference Figure 2, the light conversion layer 113 also includes a second diffusing agent 1132 distributed in the second adhesive 1133. The second diffusing agent 1132 is provided in an appropriate amount in the light conversion layer 113, which can have a light-homogenizing effect on the first light and the second light in the light conversion layer 113, further improving the light color uniformity of the light-emitting diode, and the first light incident on the light conversion layer 113 is refracted multiple times by the second diffusing agent 1132, changing the transmission direction of the first light, and increasing the optical path of the first light in the light conversion layer 113 while ensuring the secondary light-homogenizing effect on the first light, thereby improving the absorption rate of the fluorescent agent 1131 to the first light, improving the luminous efficiency of the light conversion layer 113, reducing the content requirement of the fluorescent agent 1131, and thus reducing the cost.

[0056] In an optional embodiment, the mass proportion of the second diffusing agent 1132 in the light conversion layer 113 is 1% to 2%. Optionally, the mass proportion of the second diffusing agent 1132 in the light conversion layer 113 may be, for example, 1%, 1.5%, 2%, etc.

[0057] In an optional embodiment, the second diffusing agent 1132 in the light conversion layer 113 and the first diffusing agent 1121 in the diffusion layer 112 are made of the same material. Optionally, the second diffusing agent 1132 and the first diffusing agent 1121 may also be made of different materials.

[0058] In an optional embodiment, the second diffusing agent 1132 is light diffusing powder, and the particle size of the second diffusing agent 1132 is less than 10 nm. Optionally, the particle size of the second diffusing agent 1132 can be, for example, 10 nm, 8 nm, 6 nm, 4 nm, etc.; further, the particle size of the second diffusing agent 1132 can be the same as that of the first diffusing agent 1121, or the particle size of the second diffusing agent 1132 can also be different from that of the first diffusing agent 1121.

[0059] In an optional embodiment, the volume proportion of the second diffusing agent 1132 in the light conversion layer 113 is 5% to 10%. Optionally, the volume proportion of the second diffusing agent 1132 may be, for example, 5%, 6%, 7%, 8%, 9%, 10%, etc.

[0060] In an alternative embodiment, reference Figure 1The light-emitting diode 11 may also include semiconductor structures such as a current spreading layer 114, an insulating layer 115, an electrical connection layer 116, a conductive layer 117, and an electrode 118. A first groove is formed in the light-emitting epitaxial stack 111, and the first groove penetrates the second semiconductor layer 1112 and the active layer 1113 and exposes the first semiconductor layer 1111. The conductive layer 117 is located on the side of the second semiconductor layer 1112 away from the first semiconductor layer 1111 and is filled in the first groove to be electrically connected to the first semiconductor layer 1111; the current spreading layer 114 is located between the conductive layer 117 and the light-emitting epitaxial stack 111; the insulating layer 115 is located between the current spreading layer 114 and the light-emitting epitaxial stack 111, and can be used as a current blocking layer. The insulating layer 115 is also disposed between the current spreading layer 114 and the conductive layer 117 to achieve electrical insulation; the electrical connection layer 116 is located between the current spreading layer 114 and the light-emitting epitaxial stack 111, and contacts the current spreading layer 114 and the second semiconductor layer 1112, so that the current spreading layer 114 and the second semiconductor layer 1112 are electrically connected; the electrode 118 penetrates the insulating layer 115, contacts the current spreading layer 114, and is located on both sides of the light-emitting epitaxial stack 111, so as to achieve electrical connection between the electrode 118 and the second semiconductor layer 1112. Part of the side surface of the light-emitting epitaxial stack 111 contacts the insulating layer 115, the diffusion layer 112 covers the light-emitting surface of the light-emitting epitaxial stack 111 and the exposed area of ​​the side surface, and the light conversion layer 113 completely covers the diffusion layer 112.

[0061] In order to verify the light-emitting effect of the light-emitting diode provided in this embodiment, the light-emitting diode of this embodiment was tested, and the results showed that compared with the light color distribution of the light-emitting diode in the prior art, the light-emitting diode of this embodiment has more excellent light color uniformity, effectively reduces the light color difference between different angles, lowers the central color temperature, avoids the occurrence of blue aperture and yellow aperture phenomena, and improves the performance and reliability of the light-emitting diode.

[0062] Embodiment 2

[0063] This embodiment provides a light emitting device, referring to Figure 3 , including a circuit substrate 2 and a light-emitting device 1 arranged on the circuit substrate 2. The number of the light-emitting devices 1 can be one or more. The light-emitting device 1 includes any one of the light-emitting diodes 11 provided in the first embodiment of the present application. The light-emitting diode 11 is electrically connected to the circuit substrate 2.

[0064] By applying the light-emitting diode 11 provided in the first embodiment of the present application, the light-emitting device effectively improves the uniformity of the light color of the emitted light, reduces the difference in light color between different emission angles, avoids the occurrence of blue aperture and yellow aperture phenomena, and improves the performance and reliability of the light-emitting diode.

[0065] The above embodiments are merely illustrative of the principles and effects of the present application and are not intended to limit the present application. Anyone familiar with the technology may modify, change or combine the above embodiments without violating the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed in the present application shall still be covered by the claims of the present application.

Claims

1. A light emitting diode, characterized in that: include: A light-emitting epitaxial stack, wherein the light-emitting epitaxial stack has a light-emitting surface and a back surface that are arranged opposite to each other and a side surface connecting the light-emitting surface and the back surface, and the first light having a first wavelength radiated by the light-emitting epitaxial stack is emitted from the light-emitting surface; A diffusion layer is formed on the light emitting surface of the light emitting epitaxial stack and covers at least a portion of the light emitting surface; A light conversion layer is formed on the diffusion layer to convert the first light into second light with a second wavelength, and the light conversion layer completely covers the diffusion layer and an exposed area of ​​the light emitting surface.

2. The light emitting diode according to claim 1, characterized in that: The light-emitting epitaxial stack includes a first semiconductor layer, an active layer, and a second semiconductor layer in sequence from the light-emitting surface to the back surface, and a surface of the first semiconductor layer away from the second semiconductor layer forms the light-emitting surface.

3. The light emitting diode according to claim 1, characterized in that: The diffusion layer at least covers the central area of ​​the light emitting surface of the light emitting epitaxial stack.

4. The light emitting diode according to claim 1, characterized in that: The diffusion layer completely covers the light emitting surface of the light emitting epitaxial stack and the exposed area on the side surface of the light emitting epitaxial stack.

5. The light emitting diode according to claim 1, characterized in that: The diffusion layer includes a first adhesive and a first diffusing agent dispersed in the first adhesive, and the volume proportion of the first diffusing agent in the diffusion layer is 40% to 80%.

6. The light emitting diode according to claim 5, characterized in that: The first diffusing agent is light diffusing powder, and the particle size of the light diffusing powder is less than or equal to 10 nm.

7. The light emitting diode according to claim 1, characterized in that: The light conversion layer includes a second adhesive and a fluorescent agent dispersed in the second adhesive. The volume proportion of the fluorescent agent in the light conversion layer is 50% to 80%, and the particle size of the fluorescent agent is 2 μm to 10 μm.

8. The light emitting diode according to claim 7, characterized in that: The light conversion layer further includes a second diffusing agent dispersed in the second adhesive, the volume proportion of the second diffusing agent in the light conversion layer is 5% to 10%, and the particle size of the second diffusing agent is less than or equal to 10 nm.

9. The light emitting diode according to claim 1, characterized in that: The diffusion layer has a thickness of 10 μm to 20 μm, and the light conversion layer has a thickness greater than or equal to 40 μm.

10. A light emitting device, characterized in that: The invention comprises a circuit substrate and a light emitting device arranged on the circuit substrate, wherein the light emitting device comprises the light emitting diode according to any one of claims 1 to 9, and the light emitting diode is electrically connected to the circuit substrate.

Images