Phase change material switch

Abstract

A phase change material (PCM) switch of an embodiment may include a phase change material component, a first electrode, a second electrode, and a direct heating component including an ionic resistance changing material in contact with the phase change material component. The phase change material assembly may include a phase change material that switches from an electrically conductive phase to an electrically insulating phase or from an electrically insulating phase to an electrically conductive phase by applying a thermal pulse generated by the direct heating assembly. The PCM switch may further include a switching electrode in contact with the ionic resistance changing material such that the ionic resistance changing material may be switched from a high resistance state to a low resistance state by applying a voltage to the first electrode, the second electrode, and the switching electrode. The current within the ionic resistance change material may generate heat to switch the phase change material component.

Description

Technical Field

[0001] The embodiment of the present invention relates to a phase change material switch. Background Art

[0002] Electronic devices may utilize switches to route signals along a transmission path. For example, a communication device (e.g., a mobile phone) may include multiple antenna components and multiple radio streams to ensure wireless communication at high data rates, whether via a cellular network and peripheral devices or via a mobile connectivity network and peripheral devices. A communication device may utilize a radio frequency (RF) switch to route RF signals along a transmission path, which may include multiple RF components, such as amplifiers, filters, etc. Phase change material (PCM) switches may be used in various applications, such as RF applications. Advantages of PCM switches include their immunity to interference from electromagnetic radiation, relatively fast switching times, and the ability to maintain their switching state (i.e., "on" or "off") without consuming electrical power.

[0003] new content

[0004] Some embodiments of the present invention provide a phase change material switch, comprising: a phase change material component including a first electrode and a second electrode; and a direct heating component including an ionic resistance changing material in contact with the phase change material component.

[0005] In addition, other embodiments of the present invention provide a phase change material switch, including: a phase change material component; a first electrical conductor coupled to the phase change material component; a second electrical conductor coupled to the phase change material component; a direct heating component, including an ionic resistance changing material in contact with the phase change material component and configured to supply a heat pulse to the phase change material component; and a switching electrode in contact with the ionic resistance changing material, so that the ionic resistance changing material is disposed between the phase change material component and the switching electrode, wherein the ionic resistance changing material includes a high resistance state and a low resistance state, and wherein the first electrical conductor, the second electrical conductor and the phase change material component form a radio frequency switch, and the radio frequency switch can switch from an electrically insulating phase that blocks the radio frequency signal to a conductive phase that conducts the radio frequency signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 is a block diagram of an RF transceiver system according to various embodiments.

[0008] Figure 2A is a schematic illustration of an antenna switch in a first configuration according to various embodiments.

[0009] Figure 2B is a schematic illustration of an antenna switch in a second configuration according to various embodiments.

[0010] Figure 3A is a top view of a PCM switch according to various embodiments.

[0011] Figure 3B According to various embodiments Figure 3A A vertical cross-sectional view of a portion of a PCM switch is shown.

[0012] Figure 3C is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0013] Figure 3D is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0014] Figure 3E is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0015] Figure 4A is a top view of yet another PCM switch according to various embodiments.

[0016] Figure 4B According to various embodiments Figure 4A A vertical cross-sectional view of a portion of a PCM switch is shown.

[0017] Figure 4C is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0018] Figure 4D is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0019] Figure 4E is a vertical cross-sectional view of yet another PCM switch according to various embodiments.

[0020] Figure 5Ais a vertical cross-sectional view of a PCM switch including a direct heating mechanism provided by an ionic resistance changing material according to various embodiments.

[0021] Figure 5B is a vertical cross-sectional view of yet another PCM switch including a direct heating component provided by an ionic resistance changing material according to various embodiments.

[0022] Fig. 6A is a vertical cross-sectional view of an electrochemical cell including an ionic resistance changing material in a first configuration according to various embodiments.

[0023] Figure 6B is a vertical cross-sectional view of an electrochemical cell including an ionic resistance changing material in a second configuration according to various embodiments.

[0024] Figure 6C is a vertical cross-sectional view of an electrochemical cell including an ionic resistance changing material in a third configuration according to various embodiments.

[0025] Fig.6D is a vertical cross-sectional view of an electrochemical cell including an ionic resistance changing material in a fourth configuration according to various embodiments.

[0026] Figure 7 is a vertical cross-sectional view of the first exemplary structure after forming a complementary metal oxide semiconductor (CMOS) transistor, a metal interconnect structure, and a dielectric material layer according to various embodiments.

[0027] Fig. 8A is a vertical cross-sectional view of an exemplary intermediate structure during a process of forming a PCM switch, showing a trench formed in a first switching dielectric material layer, according to various embodiments.

[0028] Figure 8B yes Fig. 8A A top view of an exemplary intermediate structure is shown.

[0029] Fig. 9A is a vertical cross-sectional view of yet another exemplary intermediate structure during a process of forming a PCM switch according to various embodiments, showing a heater pad embedded within a first switch dielectric material layer.

[0030] Fig. 9B yes Fig. 9A A top view of an exemplary intermediate structure is shown.

[0031] Fig.10 is a vertical cross-sectional view of yet another exemplary intermediate structure during a process of forming a PCM switch according to various embodiments, showing a continuous phase change material (PCM) layer formed over an upper surface of a solid electrolyte layer.

[0032] Fig.11A is a vertical cross-sectional view of yet another exemplary intermediate structure during a process of forming a PCM switch according to various embodiments, showing a discrete PCM layer positioned above an upper surface of a solid electrolyte layer.

[0033] Fig. 11B yes Fig.11A A top view of an exemplary intermediate structure is shown.

[0034] Fig. 12A is a vertical cross-sectional view of yet another exemplary intermediate structure during a process of forming a PCM switch according to various embodiments, showing Fig.11A A continuous electrode layer is formed on top of the intermediate structure shown.

[0035] Fig. 12B yes Fig. 12A A top view of an exemplary intermediate structure is shown.

[0036] Fig.13A is a vertical cross-sectional view of a PCM switch including a first electrode and a second electrode formed on an upper surface of a solid electrolyte layer and an upper surface and a side surface of a PCM layer.

[0037] Fig. 13B yes Fig.13A Top view of the PCM switch shown.

[0038] Fig.14 is a top view of a PCM switch according to various embodiments, schematically illustrating signal paths across the PCM switch.

[0039] Fig.15 is a flow chart illustrating the operation of an embodiment method of making a PCM switch in accordance with various embodiments. DETAILED DESCRIPTION

[0040] The following disclosure provides many different embodiments or examples to implement different features of the provided target. Specific examples of components and arrangements are described below to simplify the disclosure. Of course, these are only examples and are not intended to be limiting. For example, the following description of forming a first feature on or on a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the disclosure may reuse reference numbers and / or letters in various examples. This repetition is for the purpose of brevity and clarity, rather than representing the relationship between the various embodiments and / or configurations discussed.

[0041] In addition, for ease of description, spatially relative terms such as "beneath", "below", "lower", "above", "upper", etc. may be used herein to describe the relationship of one component or feature shown in the figures to another (other) component or feature. In addition to the orientation shown in the figures, the spatially relative terms are also intended to encompass different orientations of the device in use or operation. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may be interpreted accordingly. Unless otherwise expressly indicated, components with the same reference number refer to the same component and are assumed to have the same material composition and the same thickness range.

[0042] Various embodiments structures and methods that can be used to form a PCM switch are disclosed herein. Various embodiments PCM switches can be used to provide switching functions for various semiconductor devices such as the following devices: radio frequency semiconductor devices, varactors (i.e., variable capacitance capacitors), inductors, or other semiconductor devices. As used herein, "phase change material" refers to a material having at least two different phases that provide different resistivities. The different phases may include an amorphous state having a relatively high resistivity and a crystalline state having a relatively low resistivity (i.e., a resistivity lower than the amorphous state). The transition between the amorphous state and the crystalline state can be induced by controlling the time-versus-temperature thermal profile within the phase change material. For example, the PCM switch may include a resistive heating element that is thermally coupled to the phase change material and is configured to selectively heat the phase change material by applying a current pulse through the resistive heating element.

[0043] To induce the phase change material to change from a low resistivity crystalline state to a high resistivity amorphous state, a current pulse passing through the resistive heating element may have a relatively short pulse width and a short fall time, wherein the current pulse is configured to rapidly heat the phase change material to above its melting temperature (T melt ) temperature, thereby transforming the material from an ordered crystalline low resistivity phase to a disordered amorphous high resistivity phase. The short fall time of the pulse can promote rapid quenching and inhibit recrystallization of the material when cooling.

[0044] In order to induce the phase change material to change from a high resistivity amorphous state to a low resistivity crystalline state, the current pulse passing through the resistive heating element may have a relatively long pulse width and a long pulse fall time, wherein the current pulse is configured to heat the phase change material to above its crystallization temperature (T) for a period of time sufficient to induce crystal nucleation in the material. crys ) but below its melting temperature (T melt The relatively long fall time of the current pulse can promote crystal growth as the phase change material cools at a relatively slow rate.

[0045] The PCM switch may include a phase change material disposed between a pair of electrodes within a signal transmission path. The resistive heating element may extend across the phase change material in a direction transverse to the signal transmission path, and an electrically insulating thermally conductive material layer may be disposed between the resistive heating element and the phase change material. In other embodiments, the resistive heating element may be formed to be in direct contact with the phase change material. When the phase change material is in a low resistivity crystalline state, the PCM switch may be in an "on" state (i.e., the switch is closed) so that a signal may be transmitted across the phase change material between the pair of electrodes. However, when a portion of the phase change material along the signal transmission path is in a high resistivity amorphous state, the PCM switch may be in an "off" state (i.e., the switch is open) so that signal transmission between the pair of electrodes is blocked. As described above, by selectively applying current pulses having different pulse widths and fall times to the resistive heating element, the PCM switch may be switched (i.e., programmed) between an "on" state and an "off" state. The portion of the phase change material that switches between the low resistivity crystalline state and the high resistivity amorphous state may be referred to as an active region of the phase change material.

[0046] In addition, radio frequency switches are also commonly found in wireless communication devices. Such switches can be configured to facilitate coupling various circuits of the wireless communication device to an antenna. For example, it may be desirable to couple a first set of circuits to the antenna when receiving information via the antenna and to couple a second set of circuits to the antenna when transmitting information. As another example, it may be desirable to couple a first set of circuits to the antenna when communicating via a first communication scheme and to couple a second set of circuits to the antenna when communicating via a second communication scheme.

[0047] For switches used in RF applications, relevant factors for evaluating switch performance may include insertion loss, isolation, and power handling. Generally speaking, low insertion loss and high isolation are desirable characteristics of RF switches. For PCM switches, insertion loss can be related to the resistivity R across the phase change material when the switch is in the "on" state. ON The high isolation is related to the capacitance C when the switch is in the "off" state. OFFThe figure of merit (FOM) that can be used to characterize the performance of the PCM switch can be selected to have a value that is equal to the product R ON *C OFF For example, a FOM that can be used to characterize the switching performance can be ~1 / (2πR ON *C OFF ). This FOM has frequency units and can be related to the maximum frequency at which the PCM material can switch from the "on" state to the "off" state. In general, an increase in the value of the FOM can be associated with improved switching performance. Therefore, by reducing the R ON characteristics, reducing the C in the PCM switch OFF characteristics or reduce the R in the PCM switch ON Characteristics and C OFF The switching time of a PCM switch can also depend on the rate at which heat energy can be dissipated from the PCM switch.

[0048] The disclosed embodiment PCM switch may be desirable because the disclosed embodiment PCM switch may include a direct heat source that does not cause material segregation issues. In this regard, the ionic resistance changing material (i.e., solid electrolyte) may be formed in direct contact with the phase change material component. In a low resistance state, the ionic resistance changing material may form electrically conducting filaments within the ionic resistance changing material that may support current with a relatively high current density, which may serve as a local heat source that generates heat via ohmic losses. In this manner, the embodiment PCM switch may exhibit relatively efficient heat energy transfer because the heat source is in close proximity (e.g., in direct contact) to the phase change material component.

[0049] Furthermore, the embodiment PCM switch may be less susceptible to separation issues by incorporating a solid electrolyte that is compatible with the phase change material component (no material separation occurs) as the ionic resistance change material, and thus has greater durability relative to conventional PCM switches having an indirect contact heat source. In this regard, the embodiment PCM switch may exhibit a durability (i.e., durability) comparable to or greater than the durability (i.e., durability) of conventional PCM switches having an indirect heat source (and thus requiring a higher switching power). As such, the embodiment PCM switch may not compromise between switching power and performance (i.e., durability), which are characteristics of conventional PCM switches.

[0050] Embodiments A PCM switch may include a phase change material component, a first electrode, a second electrode, and a direct heating component, the direct heating component including an ionic resistance changing material in contact with the phase change material component. The phase change material component may include a phase change material that switches from a conductive phase to an electrically insulating phase or from an electrically insulating phase to a conductive phase by applying a heat pulse generated by the direct heating component. The PCM switch may further include a switching electrode that contacts the ionic resistance changing material so that the ionic resistance changing material can be switched from a high resistance state to a low resistance state by applying a voltage to the first electrode, the second electrode, and the switching electrode. The current in the ionic resistance changing material can generate heat to switch the phase change material component.

[0051] Another embodiment of the PCM switch may include a phase change material component; a first electrical conductor coupled to the phase change material component; a second electrical conductor coupled to the phase change material component; a direct heating component including an ionic resistance changing material in contact with the phase change material component and configured to supply a heat pulse to the phase change material component; and a switching electrode in contact with the ionic resistance changing material such that the ionic resistance changing material is disposed between the phase change material component and the switching electrode. The first electrical conductor, the second electrical conductor, and the phase change material component may be configured to form an RF switch that can switch from an electrically insulating phase that blocks an RF signal to a conductive phase that conducts an RF signal.

[0052] An example method of forming a PCM switch may include: forming a switching electrode; forming an ionic resistance changing material on the switching electrode in contact with the switching electrode; forming a phase change material component on the ionic resistance changing material in contact with the ionic resistance changing material; forming a first electrical conductor in contact with the phase change material component and the ionic resistance changing material; and forming a second electrical conductor in contact with the phase change material component and the ionic resistance changing material. The first electrical conductor, the second electrical conductor, and the phase change material component may be configured to form an RF switch that can switch from an electrically insulating phase that blocks RF signals to a conductive phase that conducts RF signals.

[0053] Figure 1 1 is an exemplary block diagram of an RF transceiver system 100 according to various embodiments. The RF transceiver system 100 may include at least one antenna 102, an antenna switch 104, a receiver filter 106, a transceiver processor 108, a data processor 110, a power amplifier 112, a power supply 114, and a low-pass filter 116. In some embodiments, the antenna switch 104 may be used to direct a signal from the antenna 102 to the receiver filter 106 or output from the low-pass filter 116 to the antenna 102. The antenna switch may have low loss (e.g., <0.1 dB) to avoid increasing system noise or attenuating a transmitted signal.

[0054] In some embodiments, the receiver filter 106 may be configured to filter the signal to eliminate out-of-band signals so that such out-of-band signals may not be amplified or affect the linearity of the transceiver processor 108. In some embodiments, the transceiver processor 108 may further include at least one of a low noise amplifier, an RF filter, a mixer, a demodulator, a digital-to-analog converter, an analog-to-digital converter, and a modulator. First data 118 that may be received from the receiver filter 106 may be provided to the data processor 110. Similarly, second data 120 to be provided to the antenna 102 for transmission by the antenna 102 may be provided from the data processor 110 to the transceiver processor 108.

[0055] After the transceiver processor 108 processes the second data 120, the power amplifier 112 may amplify the second data 120, and the low pass filter 116 may filter the second data 120 before the second data 120 is provided to the antenna switch 104. Then, the antenna switch 104 may provide the second data 120 received from the low pass filter 116 to the antenna 102 for transmission. In the RF transceiver system 100 of the illustrated embodiment, the antenna switch 104 may share one antenna 102 in transmission and reception and may be configured and controlled to switch signal paths. In some embodiments, the antenna switch 104 may be configured to exhibit low loss and low power consumption.

[0056] Figure 2A is a schematic illustration of the antenna switch 104 in a first configuration, and Figure 2B 2 is a schematic diagram of the antenna switch 104 in the second configuration. The antenna switch 104 may include a receiving node 202, a transmitting node 204, and an antenna node 206. The antenna switch 104 may include a first RF switch 208a and a second RF switch 208b. Figure 2A As shown in FIG. 1 , in a first configuration, the first RF switch 208a may be opened and the second RF switch 208b may be closed. In this way, the antenna node 206 may be electrically connected to the transmitting node 204. As another option, Figure 2B As shown in FIG. 2 , the first RF switch 208 a may be closed and the second RF switch 208 b may be opened. In this way, the antenna node 206 may be electrically connected to the receiving node 202 .

[0057] Figure 2A and Figure 2BIt is suggested that the antenna switch 104 may be implemented using two RF switches (208a, 208b). Such RF switches (208a, 208b) may each be implemented using one or more transistors, resistors, inductors, capacitors, diodes, etc. For example, the antenna switch 104 may include various other circuit components such as a voltage controller. In various embodiments, the various circuit components may include a switch component, and the switch component includes one or more suitable electronic switches, such as an insulated gate bipolar transistor (IGBT), a bipolar junction transistor (BJT), a field-effect transistor (FET), a metal-oxide semiconductor field-effect transistor (MOSFET), a gate turnoff thyristor (GTO), an integrated gate-commutated thyristor (IGCT), a bidirectional triode thyristor (TRIAC), etc. As described in more detail below, various other embodiments may be implemented using high performance PCM switch components.

[0058] Figure 3A is a top view of a PCM switch 300a according to various embodiments, and Figure 3B yes Figure 3A A vertical cross-sectional view of a portion of a PCM switch 300a is shown. Figure 3B A vertical cross section of the view is given by Figure 3A . The PCM switch 300a may include an RF signal line 302 having a first electrical conductor 304a and a second electrical conductor 304b. The PCM switch 300a may further include a phase change material component 306, which may be in contact with the first electrical conductor 304a and the second electrical conductor 304b. As described above, the phase change material component 306 may be in a conductive state or an insulating state. In the case where the phase change material component 306 is in a conductive state, the PCM switch is closed (i.e., the switch is in an "on" state), and the RF signal may propagate from the first electrical conductor 304a to the second electrical conductor 304b or from the second electrical conductor 304b to the first electrical conductor 304a along the RF signal line 302. In the case where the phase change material component 306 is in an insulating state, the PCM switch 300a is open (i.e., the switch is in an "off" state), and the propagation of the RF signal along the RF signal line 302 is blocked.

[0059] The PCM switch 300a may further include a first heater pad 308a and a second heater pad 308b. The first heater pad 308a and the second heater pad 308b may each be electrically connected to a heating element 310. The first heater pad 308a, the second heater pad 308b, and the heating element 310 may each be formed of a conductive material. In some embodiments, each of the first heater pad 308a, the second heater pad 308b, and the heating element 310 may be formed of the same conductive material. Alternatively, two or more different conductive materials may be used for the first heater pad 308a, the second heater pad 308b, and the heating element 310.

[0060] Applying a voltage difference between the first heater pad 308a (e.g., held at V=Vo) and the second heater pad 308b (e.g., held at V=0) can generate a current that can flow from the first heater pad 308a through the heating element 310 to the second heater pad 308b, or from the second heater pad 308b through the heating element 310 to the first heater pad 308a, depending on the sign of the applied voltage Vo. The resistance of a given circuit element (e.g., each of the first heater pad 308a, the second heater pad 308b, and the heating element 310) is proportional to the length along the direction of the current flow and inversely proportional to the cross-sectional area perpendicular to the current flow. As such, the first heater pad 308a and the second heater pad 308b can be configured to have a width that is much larger than the width of the heating element 310. Therefore, for a given applied voltage difference, the current density in the heating element 310 can be much greater relative to the current density in the first heater pad 308a and the second heater pad 308b. As such, heat generated due to ohmic losses will be generated at a greater rate (i.e., with a greater I2R power value) in the heating element 310 than heat generated in the first heater pad 308a and the second heater pad 308b. In this way, heat can be preferentially generated by the heating element 310 and can be delivered to the phase change material element 306.

[0061] like Figure 3BAs shown in , PCM switch 300a may include a phase change material component 306 electrically connected to a first electrical conductor 304a and a second electrical conductor 304b. Each of the first electrical conductor 304a, the second electrical conductor 304b, and the phase change material component 306 may be formed on a first switch dielectric material layer 312. As described in more detail below, a heating component 310 may be formed above the phase change material component 306 to contact a portion of the phase change material component 306. In this exemplary embodiment, the heating component 310 may include a conductive heater pad 314 and a cap layer 316. In addition, the cap layer 316 may be an electrically insulating material while being a thermal conductor.

[0062] like Figure 3B As shown in , the PCM switch 300a may further include a heat sink 318, which is formed below the phase change material component 306 on the side of the phase change material component 306 opposite the heating component 310. The heat sink 318 may be formed of a material having a high thermal conductivity. For example, the heat sink 318 may have a planar slab geometry and may be a metal or compound semiconductor (e.g., SiC) having a high thermal conductivity (e.g., >100 Watts / meter Kelvin (W / mK)). The heat sink 318 may be configured to remove heat from the phase change material component 306 during a cooling phase after a switching event (e.g., switching from insulation to conduction or switching from conduction to insulation). As shown, the heat sink 318 may be configured to cause heat to flow preferentially from the heating component 310 to the heat sink 318 via the phase change material component 306, such as Figure 3B 310 is coupled to a first side (e.g., top side) of the phase change material component 306, and the heat sink 318 is formed on a second side (e.g., bottom side) of the phase change material component 306 opposite the heating component 310. However, in other embodiments, the heat sink 318 and the heating component 310 may be formed on the same side of the phase change material component 306, as described below with reference to Figure 3C described.

[0063] Figure 3C is a vertical cross-sectional view of yet another PCM switch 300c according to various embodiments. In this exemplary embodiment, the PCM switch 300c is configured to have a heating element 310 and a heat sink 318 on the same side (i.e., the lower side) of the phase change material component 306. Thus, as indicated by arrow 320, heat may flow from the heating element 310 toward both the phase change material component 306 and the heat sink 318. Depending on the relative heat capacities of the heating element 310 and the phase change material component 306, the PCM switch 300c may have different performance characteristics relative to the PCM switch 300a.

[0064] For example, the PCM switch 300c and Figure 3A and Figure 3B The PCM switch 300a shown in the embodiment is different in that: the heating element 310 and the phase change material element 306 can be removed (for example, in Figure 3C The heat is then transferred from the center to the bottom, thereby resulting in inefficient heating of the phase change material component 306. Figure 3B Embodiments of the present invention may be implemented as follows: the phase change material component 306 may be quenched (i.e., heat removed) directly after a switching event, thereby making the switching time of the phase change material component 306 faster and the heating more efficient (relative to embodiments in which the heat sink 318 may be placed on the same side as the heating element 310). However, in embodiments in which the heat capacity of the heating element 310 is significantly greater than the heat capacity of the phase change material component 306, such as Figure 3C As shown in FIG. 3 , a heat sink 318 may be placed proximate to the heating element 310 so that heat may be quickly removed from the heating element 310 after a switching event.

[0065] Figure 3D and Figure 3E is a vertical cross-sectional view of yet another PCM switch (300d, 300e) according to various embodiments. FIG. 3A to FIG. 3C Compared to the embodiment of the present invention, the heating element 310 may include a heater pad 314 formed in direct contact with the phase change material element 306 (ie, without the presence of the cap layer 316). Figure 3D and Figure 3E As shown in FIG. 3 , the heating element 310 can be formed on the same side or on the opposite side of the phase change material element 306 as the heat sink 318. Figure 3C As described, depending on the relative thermal capacities of the various components of the PCM switches (300d, 300e), one or the other of the PCM switches (300d, 300e) may exhibit better performance.

[0066] Figure 4A is a top view of yet another PCM switch 400a according to various embodiments, and Figure 4B yes Figure 4A A vertical cross-sectional view of a portion of a PCM switch 400a is shown. Figure 4B A vertical cross section of the view is given by Figure 4A The PCM switch 400a may have many components that are the same or similar to those of the PCM switch 300a. Figure 3A and Figure 3B Compared with the PCM switch 300a of the illustrated embodiment, Figure 4AThe PCM switch 400a shown may include a configuration in which the positions of the heating element 310 and the heat sink 318 are interchanged (e.g., the heat sink 318 is located above the phase change material component 306 and the heating element 310 is located below the phase change material component 306). Figure 3B In the opposite direction (eg, upward) of the embodiment, the heat is preferentially directed from the heating element 310 to the heat sink 318 via the phase change material element 306, as shown in FIG. Figure 4B Thus, the heating element 310 may be coupled to a first side (eg, bottom side) of the phase change material component 306, and the heat sink 318 may be formed on a second side (eg, top side) of the phase change material component 306 opposite to the heating element 310.

[0067] like Figure 3B and Figure 4B As shown in , the heating element 310 can have a local spatial extent relative to the phase change material element 306. Therefore, heat can be applied to the phase change material element 306 in a locally distributed manner. The local spatial distribution of heat provided to the phase change material element 306 can reduce the power required to switch the phase change material. In addition, the presence of the heat sink 318 can provide more efficient heat removal after a switching event, which can increase the switching speed of the PCM switch.

[0068] In some embodiments, the heat sink 318 may include a metal or compound semiconductor having a thermal conductivity greater than 100 watts / meter kelvin. The heat sink 318 may also include Cu or SiC. The heat sink 318 may be further electrically isolated from the heating element 310 and the phase change material element 306 (see, for example, Figure 4B The heat sink 318 may be further separated from the phase change material element 306 by an electrically insulating material (eg, the first switching dielectric material layer 312) having a thermal conductivity in a range of approximately 0.1 W / m Kelvin to approximately 50 W / m Kelvin.

[0069] In addition, the phase change material component 306 may include a material having a thermal conductivity in a range of approximately 2.5 Watts / meter Kelvin to approximately 10 Watts / meter Kelvin. The phase change material component 306 may include at least one of a germanium telluride compound, an antimony telluride compound, a germanium antimony telluride compound, a germanium antimony compound, an indium germanium telluride compound, an aluminum selenide telluride compound, an indium selenide telluride compound, or an aluminum indium selenide telluride compound.

[0070] The heating element 310 may include a heater pad 314 that generates heat when an applied voltage generates a current through the heater pad 314. The heater pad 314 may further include a material that is at least one of tungsten, tungsten nitride, titanium nitride, and nickel silicide. Other suitable materials are also within the contemplated scope of the present disclosure. In addition, the heater pad 314 may include a material having a thermal conductivity greater than 175 watts / meter kelvin.

[0071] The PCM switch (300a, 300c, 400a, 400c) may further include a dielectric cap layer 316 that contacts the phase change material component 306 and separates the heater pad 314 from the phase change material component 306. The dielectric cap layer 316 may include an electrical insulator having a thermal conductivity greater than 100 Watts / meter Kelvin. The dielectric cap layer 316 may include at least one of silicon nitride, silicon carbide, silicon carbonitride, and aluminum nitride. In some embodiments, the phase change material component 306 may be configured to switch from a conductive phase to an insulating phase in approximately 5.0×10-7 seconds or less.

[0072] The first electrical conductor 304a, the second electrical conductor 304b and the phase change material component 306 can be configured to form an RF switch (300a, 300c, 400a, 400c) that can block RF signals when the phase change material component 306 is in an electrically insulating phase and can conduct RF signals when the phase change material component 306 is in a conductive phase. The heat sink 318 can be formed on a second side of the phase change material component 306 opposite the heating element 310 (e.g., see Figure 4B In some embodiments, the heat sink 318 may include a metal or compound semiconductor having a thermal conductivity greater than 100 watts per meter kelvin. In addition, the heat sink 318 may be electrically isolated from the heating element 310 and the phase change material element 306.

[0073] Figure 4C is a vertical cross-sectional view of yet another PCM switch 400c according to various embodiments. In this exemplary embodiment, the PCM switch 400c can be configured to have the heating element 310 and the heat sink 318 on the same side (i.e., the upper side) of the phase change material component 306. Thus, as shown by arrow 320, heat can flow from the heating element 310 toward both the phase change material component 306 and the heat sink 318. Depending on the relative heat capacities of the heating element 310 and the phase change material component 306, the PCM switch 400c can have different performance characteristics relative to the PCM switch 400a.

[0074] For example, the PCM switch 400c is relative to Figure 4A and Figure 4BThe PCM switch 400a shown may exhibit different performance characteristics as follows: the PCM switch 400a may be removed from the heating element 310 and the phase change material element 306 (eg, Figure 4C The heat is then transferred upwards, which results in low efficiency in heating the phase change material component 306. Figure 4B Embodiments of the present invention may be implemented in such a way that the phase change material component 306 may be quenched (i.e., heat removed) directly after a switching event, thereby making the switching time of the phase change material component 306 faster and the heating more efficient (relative to embodiments in which the heat sink 318 may be placed on the same side as the heating element 310). However, in embodiments in which the heat capacity of the heating element 310 is significantly greater than the heat capacity of the phase change material component 306, such as Figure 4C As shown in FIG. 3 , a heat sink 318 may be placed proximate to the heating element 310 so that heat may be quickly removed from the heating element 310 after a switching event.

[0075] Figure 4D and Figure 4E is a vertical cross-sectional view of yet another PCM switch (400d, 400e) according to various embodiments. FIG. 4A to FIG. 4C Compared to the embodiment of the present invention, the heating element 310 may include a heater pad 314 formed in direct contact with the phase change material element 306 (ie, without the presence of the cap layer 316). Figure 4D and Figure 4E As shown in FIG. 3 , the heating element 310 can be formed on the same side or on the opposite side of the phase change material element 306 as the heat sink 318. Figure 4C As described, depending on the relative thermal capacities of the various components of the PCM switches (400d, 400e), one or the other of the PCM switches (400d, 400e) may exhibit better performance. Various inline structures of the semiconductor structure may be used as heat sinks 318, as described in more detail below.

[0076] As mentioned above, Figure 3D , Figure 3E , Figure 4D and Figure 4E Each of the illustrated embodiment PCM switches (300d, 300e, 400d, 400e) may be configured with a heater pad 314 formed directly in contact with the phase change material component 306. In contrast, FIG. 3A to FIG. 3C and FIG. 4A to FIG. 4CThe illustrated PCM switches (300a, 300c, 400a, 400c) include a cap layer 316 separating the heater pad 314 from the phase change material assembly 306. PCM switches (300d, 300e, 400d, 400e) having a direct heating configuration may exhibit more efficient heat transfer from the heater pad 314 to the phase change material assembly 306 and may therefore require less power to complete a switching event.

[0077] However, the PCM switches (300d, 300e, 400d, 400e) may suffer from material separation, in which components from the heater pads 314 and components from the phase change material assembly 306 may mix and form various precipitates due to the direct contact between the heater pads 314 and the phase change material assembly 306. Such separation may degrade the material properties of the phase change material assembly 306, which may degrade the performance of the PCM switches (300d, 300e, 400d, 400e). Therefore, embodiments having an indirect heating configuration, such as FIG. 3A to FIG. 3C and FIG. 4A to FIG. 4C The PCM switches (300a, 300c, 400a, 400c) shown may require higher switching power, but may exhibit better performance and durability than the PCM switches (300d, 300e, 400d, 400e). FIG. 3A to FIG. 4E The various embodiments described herein represent a trade-off between switching power and efficiency. 5A to 6D The various embodiments described herein can alleviate the above-referenced PCM switches. FIG. 3A to FIG. 4E Some or all of the disadvantages of the PCM switch are described below.

[0078] Figure 5A is a vertical cross-sectional view of a first PCM switch 500a according to various embodiments and Figure 5B 5 is a vertical cross-sectional view of a second PCM switch 500b, each of which includes a direct heating mechanism provided by an ionic resistance changing material. Each of the first PCM switch 500a and the second PCM switch 500b includes a phase change material component 306 electrically coupled to a first electrical conductor 304a and a second electrical conductor 304b. However, as described above with reference to FIG. 3A to FIG. 4E In contrast to the PCM switches described above, each of the first PCM switch 500 a and the second PCM switch 500 b may include a solid electrolyte 502 (eg, an example ionic resistance changing material) disposed between the phase change material component 306 and the switching electrode 504 .

[0079] and Figure 3ACompared to the PCM switch of the embodiment shown in FIG4E , the switching electrode 504 is not configured to generate heat. Specifically, the switching electrode 504 may be a material having a low resistance and may be configured to apply a potential difference (i.e., a voltage) across the solid electrolyte 502. In response to the applied potential difference, the metal ions 506 may flow within the solid electrolyte 502 (e.g., see FIG4E ). Figure 5A and Figure 5B ). The flow of metal ions 506 may cause metal filaments 514 to form within electrolyte 502 (see, for example, FIG. 6B to FIG. 6D ), thereby changing the conductivity of the electrolyte.

[0080] The current flowing along the metal filament 514 may generate heat due to ohmic losses. The current may be geometrically constrained by the metal filament 514, and thus the current density may be significantly greater than the current density flowing through the switching electrode 504, the first electrical conductor 304a, and the second electrical conductor 304b. In this way, the metal filament 514 may be used as a local heat source. In this way, the first PCM switch 500a of the embodiment and the second PCM switch 500b of the embodiment may exhibit relatively efficient heat energy transfer due to the heat source being very close to the phase change material component 306. In addition, by selecting the solid electrolyte 502 as a material that is compatible with the phase change material component 306 (i.e., does not cause material separation), the first PCM switch 500a and the second PCM switch 500b may not be prone to separation problems. In this way, the first PCM switch 500a and the second PCM switch 500b may not be affected by the phase change material component 306. FIG. 3A to FIG. 4E The characteristics of the embodiments are affected by the trade-off between switching power and efficiency (ie, endurance).

[0081] In respectively Figure 5A and Figure 5B In the embodiment shown in the first PCM switch 500a and the second PCM switch 500b, ion flow occurs only in the solid electrolyte 502. In both the first PCM switch 500a and the second PCM switch 500b, heat can be generated in the solid electrolyte 502, and then the heat can be directly transferred to the phase change material component 306. FIG. 6A to FIG. 6D The detailed electrochemical process for manipulating heat generation in the first PCM switch 500a and the second PCM switch 500b is described in more detail.

[0082] FIG. 6A to FIG. 6D5 is a vertical cross-sectional view of an electrochemical cell including an ionic resistance changing material (e.g., solid electrolyte 502) in a corresponding configuration according to various embodiments. The cell includes solid electrolyte 502 disposed between an anode 508 and a cathode 510. Anode 508 can be configured as an oxidizable (i.e., ionizable) electrode, such as Ag, Cu, Al, etc., while cathode 510 can be a relatively inert electrode, such as Pt, Ir, Au, W, TiN, etc. Solid electrolyte 502 can be selected to allow transport of positively charged ions (i.e., cations) of a metal corresponding to the positively charged ions of anode 508. Fig. 6A The electrochemical cell is shown in a first configuration in which there is no potential difference (ie, voltage or electrochemical potential) between the anode 508 and the cathode 510. As shown, the solid electrolyte 502 may include a plurality of metal cations 512 and may support ionic conduction. Figure 5A and FIG. 6A to FIG. 6D In an exemplary embodiment of the present invention, the solid electrolyte 502 may be selected to have good ionic conductivity but poor charge conductivity.

[0083] As shown in the figure, Figure 6B In the embodiment, applying a positive voltage to the anode 508 and a negative voltage to the cathode 510 may cause local dissolution of the anode, thereby causing the oxidation reaction M to be (阳极) →M z+ +ze- (where z is an integer) to produce metal cations 512. Metal cations 512 may enter solid electrolyte 502 and flow toward cathode 510. Electrons ze- released by the oxidation reaction may be transferred from anode 508 to cathode 510 via an external circuit (not shown). z+ +ze-→M(filament), the metal cations 512 flowing through the solid electrolyte 502 may combine with the electrons provided by the cathode 510 to form metal filaments 514 .

[0084] like Figure 6C As shown in , if the voltage difference between anode 508 and cathode 510 is maintained for a long enough time, metal filament 514 can extend from cathode 510 to anode 508, thereby creating a direct conductive path between cathode 510 and anode 508. When this happens, the conductivity of the electrochemical cell can be significantly increased. As mentioned above, current can then flow along metal filament 514 and may generate heat due to ohmic losses.

[0085] like Fig.6D As shown in , the chemical reaction that produces the metal filament 514 can be reversed by reversing the polarity of the applied voltage. In this regard, the voltage applied to the anode 508 can be changed from a positive voltage to a negative voltage, and the voltage applied to the cathode 510 can be changed from a negative voltage to a positive voltage, such as Fig.6DThen, according to the oxidation reaction M (细丝) →M z+ +ze- (where z is an integer) oxidizes the metal atoms of the metal filament 514, and the released electrons ze- can flow from the cathode 510 to the anode 508 via an external circuit (not shown). Similarly, the metal cations 512 generated by the oxidation reaction can flow to the anode 508 via the solid electrolyte 502.

[0086] Then, the reduction reaction M z+ +ze-→M (阳极) (wherein the metal cations 512 arriving at the anode 508 from the solid electrolyte 502 can be ze-combined with the electrons provided by the anode 508) and the metal cations 512 arriving at the anode 508 are recombined into the anode 508. In this way, the metal filaments 514 can be dissolved and the conductivity of the electrochemical cell can be returned to its high resistance state (e.g., Fig. 6A In this way, the solid electrolyte 502 can be configured as an ionic resistance changing material, which has a resistance changing property that can be changed by applying a first voltage difference (for example, see Figure 6B and Figure 6C ) and a second voltage difference (eg, see Fig.6D ) is a resistance that reversibly switches from a high value to a low value, and vice versa.

[0087] Figure 5A The first PCM switch 500a of the embodiment shown may have FIG. 6A to FIG. 6D In a configuration similar to that of , in which the metal ions 506 (e.g., metal cations 512) can flow along a direct path from the anode 508 (e.g., the first electrical conductor 304a and the second electrical conductor 304b) to the cathode 510 (e.g., the switching electrode 504). Alternatively, as Figure 5B As shown in FIG. 5 , the second PCM switch 500 b may be configured such that the metal ions 506 may flow along a direct path from the anode 508 (eg, the switching electrode 504 ) to the cathode 510 (eg, the first electrical conductor 304 a and the second electrical conductor 304 b ).

[0088] A variety of oxides, higher chalcogenides (compounds of S, Se, Te), halides, and other insulating materials can be used to form the solid electrolyte 502. These compounds are generally divided into three categories: (ionic) electrolytes, such as AgI and related materials and Ag-polymers; mixed (ionic-electronic) conductors, such as Ag 2+δ S, Cu 2-δ S, Cu 2-δ O, Ag-AsS x 、Ag-GeSe x、Cu-GeSe x 、Ag-GeS x 、Cu-GeS x , Cu-GeTe, Cu-TCNQ and a-Si; and are usually not considered solid electrolytes when combined with Cu or Ag or Cu / Ag containing materials: SiO 2 、Al 2 O 3 , WO 3 、 2 O 5 、TiO 2 ,GeO x 、ZrO 2 , HfO 2 , graphene oxide, Si 3 N 4 Various forms of carbon, including carbon nanotubes, graphene-like conductive carbon, and insulating carbon, may also be used to form the solid electrolyte 502 .

[0089] The various materials of the anode 508, the solid electrolyte 502, and the cathode 510 may be formed by various deposition techniques, including evaporation, RF sputtering, electron beam deposition, physical vapor deposition (PVD), radio-frequency physics vapor deposition (RF-PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), etc. An exemplary system may include (anode / electrolyte / cathode) Ag / Ag 33 Ge 20 Se 47 / Ni、Ag / Ag-GeSe / Pt、Al / Cu / Ge 0.5 Se 0.5 / W, Ag or Cu / GeS / W, Ag / Sb:GeS 2 / W, Cu / Ta 2 O 5 / Pt、Cu / Ta 2 O 5 / W、Cu / Cu:SiO 2 / W、Ag / a-Si / SiGe / W、Ag / Si 3 N 4 / Pt、Cu / Cu-Te / GdO x / W、Cu / Ta / TaSiO y / Ru、Al / Cu / Ti / TaO x / W, Cu-Te / Al 2 O 3 / Si、Al / TiN / Cu / TiW / Al 2 O 3 / W, etc. As shown in these examples, certain components of the anode / electrolyte / cathode structure may include a multilayer structure. For example, Al / Cu / Ge 0.5 Se 0.5 Ag / a-Si / SiGe / W includes a multilayer anode 508 including layers of Al and Cu, while Ag / a-Si / SiGe / W includes a multilayer solid electrolyte 502 including layers of a-Si and SiGe.

[0090] Metal-doped chalcogenide glasses provide an example of how ions (e.g., metal cations 512) may move in solid electrolytes 502. In these materials, metal ions (M+) may be associated with non-bridging chalcogens (Ch-), but the M-Ch bonds may be quite long (e.g., about 0.25 nanometers in Ag-Ge-S ternaries). The coulombic energy is inversely proportional to the (fixed) anion-(mobile) cation 512 separation, and thus these long bonds result in small attractive forces, <0.5 electron volts (assuming the dielectric constant is over 10, which is reasonable for these materials), making it relatively easy for metal cations 512 to dislocate. There may be potential barriers between these sites with activation energies that include coulomb energy and a strain energy term. The strain component may come from the structure of the support material that hinders the motion of the migrating ions. In general, ternary chalcogenide glasses may be more flexible than typical oxide glasses, and this effect may reduce the strain energy component.

[0091] The strain energy term may cause different ion mobilities in ostensibly identical compositions for films deposited under different conditions; for example, thermally evaporated films are more "relaxed" and open than films made by methods such as atomic layer deposition (ALD), and therefore the latter tend to have lower ion mobility and generally poorer switching characteristics. The device programming history may also affect the openness of the path and may reduce the strain energy term. Ion mobility is generally a function of both terms, and in short, the material with the highest mobility will be the one that has the lowest Coulomb energy and the most "open" physical path for ions to pass through the material, resulting in the lowest strain component. For the ionic conductors mentioned above, the activation energy of such a combined barrier is typically in the range from about 0.2 eV to 0.6 eV.

[0092] To form the solid electrolyte 502, a few to tens of atomic percent (at.%) of mobile metal may be added to the base glass to form the solid electrolyte 502. If the metal reacts primarily with the chalcogen in the base glass to form M-Ch (this is likely Ag and Cu in a Ch-rich material), then almost all of the metal may be mobile. The metal may be incorporated into the source material during fabrication of the device layers. Specifically, Ag may be added to the chalcogenide glass film by a photodissolution process. This process may involve light energy greater than the optical gap of the glass to create charged defects at the interface between the thin layer of metal and the chalcogenide. The holes so created may be trapped by the metal to form ions, while electrons diffuse into the chalcogenide film.

[0093] The electric field generated may be sufficient to allow ions to overcome the energy barrier at the interface and move into the chalcogenide. This may result in the formation of an interface monolayer of an Ag+-rich phase (e.g., in an Ag-rich material) that supplies metal ions deep into the film driven by drift and diffusion. The light used for photodissolution is typically the same as that used for lithography (i.e., a wavelength of 365 nanometers). This corresponds to an energy of 3.39 electron volts, which is sufficient to ionize chalcogenide glasses, which typically have an optical gap of less than 3 electron volts. Oxides tend to have much larger gaps (on the order of 9 electron volts for SiO2), and therefore thermal diffusion of metals is favored over photodissolution.

[0094] The switching time for a given system (anode 508, solid electrolyte 502, cathode 510) is generally dependent on the strength of the applied switching electric field (as determined by the applied voltage difference between anode 508 and cathode 510). 2In a system with a solid electrolyte 502 containing Cu, the switching time can be varied from 1 second to 1 microsecond with a change in applied voltage ranging from 0.05 volts to 0.35 volts. 2 Similar behavior can be found in the system with solid electrolyte 502 of S. In this regard, when the switching voltage changes from 0.1V to 0.4V, the switching time of this system can range from 1 second to 1 microsecond.

[0095] Figure 7 is a vertical cross-sectional view of a first exemplary structure before a PCM switch is formed according to various embodiments. The first exemplary structure may include a substrate 8, which may be a semiconductor substrate, such as a commercially available silicon substrate. The substrate 8 may include a semiconductor material layer 9 at least at an upper portion thereof. The semiconductor material layer 9 may be a surface portion of a bulk semiconductor substrate, or may be a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate. In one embodiment, the semiconductor material layer 9 includes a single crystalline semiconductor material, such as single crystalline silicon. In one embodiment, the substrate 8 may include a single crystalline silicon substrate including a single crystalline silicon material.

[0096] A shallow trench isolation structure 634 including a dielectric material such as silicon oxide may be formed in an upper portion of the semiconductor material layer 9. Appropriate doped semiconductor wells, such as a p-type well and an n-type well, may be formed in each region laterally enclosed by a portion of the shallow trench isolation structure 634. Field effect transistors 632 may be formed over the top surface of the semiconductor material layer 9. For example, each field effect transistor 632 may include: a source electrode 636; a drain electrode 640; a semiconductor channel 638, which may include a surface portion of the substrate 8 extending between the source electrode 636 and the drain electrode 640; and a gate structure 646. The semiconductor channel 638 may include a single crystalline semiconductor material.

[0097] Each gate structure 646 may include a gate dielectric layer 648, a gate electrode 650, a gate cap dielectric 652, and a dielectric gate spacer 654. A source side metal semiconductor alloy region 642 may be formed on each source electrode 636, and a drain side metal semiconductor alloy region 644 may be formed on each drain electrode 640. The devices formed on the top surface of the semiconductor material layer 9 may include complementary metal-oxide-semiconductor (CMOS) transistors and optional additional semiconductor devices (e.g., resistors, diodes, capacitor structures, etc.), and are collectively referred to as CMOS circuitry 630.

[0098] One or more of the field effect transistors 632 in the CMOS circuit system 630 may include a semiconductor channel 638, which includes a portion of the semiconductor material layer 9 located in the substrate 8. If the semiconductor material layer 9 may include a single crystalline semiconductor material such as single crystalline silicon, then the semiconductor channel 638 of each field effect transistor 632 in the CMOS circuit system 630 may include a single crystalline semiconductor channel such as a single crystalline silicon channel. In one embodiment, a subset of the field effect transistors in the CMOS circuit system 630 may include corresponding nodes, which are then electrically connected to the nodes of the PCM switch to be formed later.

[0099] In one embodiment, substrate 8 may include a single crystal silicon substrate, and field effect transistor 632 may include a corresponding portion of the single crystal silicon substrate as a semiconducting channel. As used herein, a "semiconducting" component refers to a component having an electrical conductivity ranging from 1.0×10-6 Siemens / cm to 1.0×105 Siemens / cm. As used herein, a "semiconductor material" refers to a material having an electrical conductivity ranging from 1.0×10-6 Siemens / cm to 1.0×105 Siemens / cm in the absence of an electrical dopant, and is capable of generating a doped material having an electrical conductivity ranging from 1.0 Siemens / cm to 1.0×105 Siemens / cm when appropriately doped with an electrical dopant.

[0100] Various metal interconnect structures formed within the dielectric material layer may then be formed over the substrate 8 and the semiconductor device 632 (e.g., field effect transistor) located on the substrate 8. In an illustrative example, the dielectric material layer may include, for example, a first dielectric material layer 604 (the first dielectric material layer 604 may be a layer surrounding the contact structure connected to the source and drain) (sometimes referred to as a contact level dielectric material layer 604), a first inline level dielectric material layer 606, a second inline level dielectric material layer 612, a third inline level dielectric material layer 618, and a fourth inline level dielectric material layer 624.

[0101] The metal interconnect structure may include: a device contact via structure 608 formed in the first dielectric material layer 604 and contacting a corresponding component of the CMOS circuit system 630; a first metal line structure 610 formed in the first interconnect level dielectric material layer 606; a first metal via structure 614 formed in the lower portion of the second interconnect level dielectric material layer 612; a second metal line structure 616 formed in the upper portion of the second interconnect level dielectric material layer 612; a second metal via structure 620 formed in the lower portion of the third interconnect level dielectric material layer 618; a third metal line structure 622 formed in the upper portion of the third interconnect level dielectric material layer 618; a third metal via structure 626 formed in the lower portion of the fourth interconnect level dielectric material layer 624; and a fourth metal line structure 628 formed in the upper portion of the fourth interconnect level dielectric material layer 624. Although the present disclosure is described using embodiments in which four levels of metal line structures are formed in dielectric material layers, embodiments in which fewer or greater numbers of levels of metal line structures are formed in dielectric material layers are expressly contemplated herein.

[0102] Each of the dielectric material layers (604, 606, 612, 618, 624) may include a dielectric material such as undoped silicate glass, doped silicate glass, organosilicate glass, amorphous fluorinated carbon, porous variants thereof, or combinations thereof. Each of the metal interlink structures (608, 610, 614, 616, 620, 622, 626, 628) may include at least one conductive material, which may be a combination of a metal liner material (such as a metal nitride or a metal carbide) and a metal filler material. Each metal liner material may include TiN, TaN, WN, TiC, TaC, and WC, and each metal filler material portion may include W, Cu, Al, Co, Ru, Mo, Ta, Ti, alloys thereof, and / or combinations thereof. Other suitable metal liner materials and metal filler materials within the intended scope of the present disclosure may also be used. In one embodiment, the first metal via structure 614 and the second metal line structure 616 can be formed as an integrated line and via structure by a dual damascene process. In general, any contiguous set of metal line structures (616, 622, 628) and at least one underlying metal via structure (614, 620, 626) can be formed as an integrated line and via structure.

[0103] In general, the semiconductor device 632 may be formed on the substrate 8, and the metal interconnect structures (608, 610, 614, 616, 620, 622, 626, 628) and the dielectric material layers (604, 606, 612, 618, 624) may be formed on the semiconductor device 632. The metal interconnect structures (608, 610, 614, 616, 620, 622, 626, 628) may be formed in the dielectric material layers (604, 606, 612, 618, 624) and may be electrically connected to the semiconductor device.

[0104] Refer again Figure 7 A first switching dielectric material layer 312 may be formed on the metal interconnect structures (608, 610, 614, 616, 620, 622, 626, 628) and the dielectric material layers (604, 606, 612, 618, 624). The first switching dielectric material layer 312 may include a suitable dielectric material, such as silicon oxide, undoped silicate glass, doped silicate glass, organosilicate glass, amorphous fluorinated carbon, porous variants thereof, or combinations thereof. Other suitable dielectric materials are also within the contemplated scope of the present disclosure. The first switch dielectric material layer 312 may be deposited using any suitable deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD (MOCVD), plasma enhanced CVD (PECVD), sputtering, laser ablation, or the like. The first switch dielectric material layer 312 may include a flat upper surface 702.

[0105] Fig. 8A is a vertical cross-sectional view of an exemplary intermediate structure during a process of forming a PCM switch, showing trenches 704 formed in the first switching dielectric material layer 312 , according to various embodiments. Figure 8B yes Fig. 8A A top view of an exemplary intermediate structure is shown. A patterned photoresist or hard mask (not shown) may be formed over the top surface of the first switch dielectric material layer 312. An anisotropic etching process (e.g., a reactive ion etching process) may then be performed to etch the portions of the dielectric material layer 312 exposed by the openings in the patterned photoresist or hard mask. Fig. 8A and Figure 8BAs shown in , the trench 704 may have a rectangular cross-sectional shape in a plane extending along the second horizontal direction hd2 (including a horizontal bottom surface and vertically extending sidewalls). However, it should be understood that the trench 704 may have a different cross-sectional shape (e.g., a trapezoidal cross-sectional shape), and the sidewalls of the trench may include angled surfaces or curved surfaces. After the etching process, the patterned photoresist or hard mask may be removed using a suitable process (e.g., by ashing or dissolution using a solvent).

[0106] Fig. 9A is a vertical cross-sectional view of an exemplary intermediate structure during a process of forming a PCM switch, showing a switching electrode 504 embedded within a first switching dielectric material layer 312 , according to various embodiments. Fig. 9B yes Fig. 9A The switching electrode 504 can be formed by depositing a conductive material into the trench 704 in the first switching dielectric material layer 312 to form the switching electrode 504. Fig. 8A and Figure 8B The exemplary intermediate structure shown forms Fig. 9A and Fig. 9B . The conductive material deposited into trench 704 to form switch electrode 504 may include a metal liner material and a metal filler material. The metal liner material may include a conductive metal nitride or a conductive metal carbide, such as TiN, TiN / W, Ti / Al / Ti, TaN, WN, TiC, TaC, and / or WC. The metal filler material may include W, Cu, Al, Ag, Co, Ru, Mo, Ta, Ti, alloys thereof, and / or combinations thereof. Other suitable metal liner materials and metal filler materials within the intended scope of the present disclosure may also be used.

[0107] The metal liner material and the metal filling material may be formed by a suitable deposition process, which may include one or more of a CVD process, a PVD process, an ALD process, an electroplating process, etc. Other suitable deposition processes are also within the intended scope of the present disclosure. The excess portion of the conductive material may be removed from the upper surface 702 of the first switch dielectric material layer 312 by a planarization process, so that the upper surface 806 of the switch electrode 504 is substantially coplanar with the upper surface 702 of the first switch dielectric material layer 312. The planarization process may include using a CMP process, but other suitable planarization processes may also be used. Fig. 9A As shown in , the first switching dielectric material layer 312 may surround the switching electrode 504 over the bottom surface and lateral sides of the switching electrode 504 .

[0108] Fig.10is a vertical cross-sectional view of an exemplary intermediate structure during a process of forming a PCM switch according to various embodiments, showing a continuous phase change material (PCM) layer 306L formed on an upper surface 904 of a solid electrolyte 502. The solid electrolyte 502 may be deposited by processes such as evaporation, RF sputtering, electron beam deposition, physical vapor deposition (PVD), radio frequency physical vapor deposition (RF-PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), etc. Exemplary materials may include one or more of the following materials in combination with Cu or Ag or a Cu / Ag containing material: AgI, Ag-polymer, Ag 2+δ S, Cu 2-δ S, Cu 2-δ O, Ag-AsS x 、Ag-GeSe x 、Cu-GeSe x 、Ag-GeS x 、Cu-GeS x , Cu-GeTe, Cu-TCNQ, a-Si, SiO 2 、Al 2 O 3 , WO 3 、 2 O 5 、TiO 2 ,GeO x 、ZrO 2 , HfO 2 , graphene oxide, Si 3 N 4 , AlN and MSQ.

[0109] A continuous PCM layer 306L may be deposited over the upper surface 904 of the solid electrolyte 502 using a suitable deposition process as described above. The continuous PCM layer 306L may include a suitable phase change material having at least two different phases providing different resistivities, such as a high resistivity amorphous phase and a low resistivity crystalline phase. Suitable phase change materials for the continuous PCM layer 306L may include, but are not limited to, germanium telluride compounds, antimony telluride compounds, such as Ge 2 Sb 2 Te 5 or GeSb 2 Te 4The phase change material may be a germanium antimony telluride (GST) compound, a germanium antimony compound, an indium germanium telluride compound, an aluminum selenide telluride compound, an indium selenide telluride compound, or an aluminum indium selenide telluride compound. In some embodiments, the phase change material may be doped with a suitable dopant such as indium or antimony, or the phase change material may be undoped. Other suitable materials for the continuous PCM layer 306L are also within the contemplated scope of the present disclosure.

[0110] Fig.11A is a vertical cross-sectional view of an exemplary intermediate structure during a process of forming a PCM switch, showing discrete phase change material components 306 positioned above an upper surface 904 of a solid electrolyte 502 , according to various embodiments. Fig. 11B yes Fig.11A A top view of an exemplary intermediate structure is shown. The Fig.10 Portions of the continuous PCM layer 306L are shown to form the phase change material element 306. In this regard, the patterned mask may be formed by depositing a layer of photoresist over the upper surface 1102 of the continuous PCM layer 306L and lithographically patterning the photoresist to provide a patterned mask.

[0111] The patterned mask may cover a portion of the continuous PCM layer 306L overlying the solid electrolyte 502. The portion of the patterned mask overlying the solid electrolyte 502 may have a larger lateral dimension along a first horizontal direction hd1 than the solid electrolyte 502 and the switching electrode 504 along the first horizontal direction hd1, and may have a smaller lateral dimension along a second horizontal direction hd2 perpendicular to the first horizontal direction hd1 than the solid electrolyte 502.

[0112] The etching process may expose the upper surface 904 of the solid electrolyte 502 surrounding the phase change material component 306. In various embodiments, the phase change material component 306 may have a larger lateral dimension than the solid electrolyte 502 and the switching electrode 504 along the first horizontal direction hd1 and may have a smaller lateral dimension than the solid electrolyte 502 and the switching electrode 504 along the second horizontal direction hd2 (e.g., see Fig.11A and Fig. 11B After the etching process, the patterned mask may be removed using a suitable process, such as by ashing or dissolution using a solvent.

[0113] Fig. 12A is a vertical cross-sectional view of an exemplary intermediate structure 1200 during a process of forming a PCM switch according to various embodiments, and Fig. 12B yes Fig. 12A A top view of an exemplary intermediate structure 1200 is shown. Fig.11A and Fig. 11BA continuous electrode layer 1202L is deposited on the intermediate structure 1100. Fig.11A and Fig. 11B The exemplary intermediate structure shown forms Fig. 12A and Fig. 12B 1202L. A continuous electrode layer 1202L may be formed by depositing a conductive material on the exposed upper surface of the solid electrolyte 502 and on the upper and side surfaces of the phase change material component 306. The continuous electrode layer may include a metal material having a relatively low resistivity, such as tungsten, tungsten nitride, nickel silicide, and / or aluminum. Other suitable materials for the continuous electrode layer are also within the contemplated scope of the present disclosure. The continuous electrode layer may be deposited using a suitable deposition process as described above.

[0114] Fig.13A 1 is a vertical cross-sectional view of the PCM switch 1300 , which includes a first electrode 1202 a and a second electrode 1202 b formed on the upper surface 904 of the solid electrolyte 502 and the upper surface 1102 and side surfaces of the phase change material component 306 . Fig. 13B yes Fig.13A The PCM switch 1300 is shown in FIG. Fig. 12A and Fig. 12B The continuous electrode layer 1202L is shown being etched to form the first electrode 1202a and the second electrode 1202b to form the PCM switch 1300. In this regard, a patterned mask (not shown) may be formed on the continuous electrode layer 1202L by depositing a layer of photoresist on the continuous electrode layer and lithographically patterning the photoresist to provide a patterned mask. The patterned mask may expose the area of ​​the continuous electrode layer 1202L overlying the switching electrode 504 and the solid electrolyte 502 and may cover some portions of the continuous electrode layer 1202L overlying the peripheral area of ​​the phase change material component 306 on the opposite side of the phase change material component 306.

[0115] An etching process (eg, an anisotropic etching process) may then be performed to remove portions of the continuous electrode layer 1202L exposed by the patterned mask and produce discrete first and second electrodes 1202a, 1202b on the upper surface 1102 and side surfaces of the phase change material element 306. Fig.13A As shown in FIG. 1 , the etching process may expose a portion of the upper surface 1102 of the phase change material component 306 between the first electrode 1202a and the second electrode 1202b. In various embodiments, the first electrode 1202a and the second electrode 1202b may be electrically connected to the first electrical conductor 304a and the second RF conductor, respectively (see, for example, Figure 3A and Figure 4A ).

[0116] As mentioned above 5A to 6D As described above, the properties of the ionic resistance changing material (ie, the solid electrolyte 502) can be changed by applying a voltage difference between the switching electrode 504, the first electrode 1202a, and the second electrode 1202b. Figure 5A In the first PCM switch 500a of the exemplary embodiment shown, the first electrode (304a, 1202a) and the second electrode (304b, 1202b) may include an oxidizable metal (e.g., Ag, Cu, etc.) and the switching electrode 504 may include an inert metal (e.g., Pt, Ir, Au, W, TiN, etc.). Applying a positive voltage to the first electrode (304a, 1202a) and the second electrode (304b, 1202b) and applying a negative voltage to the switching electrode 504 may cause the formation of a metal filament 514 in the solid electrolyte 502 (e.g., see Figure 6B , Figure 6C and Fig.6D ). The current flowing along the metal filament 514 may generate heat due to ohmic loss. Such heat may be directly transferred to the phase change material component 306 to change the conductive state of the phase change material component 306.

[0117] exist Figure 5B In the second PCM switch 500b of the exemplary embodiment shown, the first electrode (304a, 1202a) and the second electrode (304b, 1202b) may include an inert metal (e.g., Pt, Ir, Au, W, TiN, etc.) and the switching electrode 504 may include an oxidizable metal (e.g., Ag, Cu, etc.). Applying a negative voltage to the first electrode (304a, 1202a) and the second electrode (304b, 1202b) and applying a positive voltage to the switching electrode 504 may cause the phase change material element (e.g., in FIG. 6B to FIG. 6D The metal filaments 514 are formed in the solid electrolyte 502 (see, for example, Figure 6B , Figure 6C and Fig.6D ). As a result, heat may be generated directly in the phase change material element 306 due to ohmic losses. Such heat may change the conductive state of the phase change material element 306.

[0118] By controlling the time-dependent characteristics of the voltages applied to the switching electrode 504, the first electrode (304a, 1202a), and the second electrode (304b, 1202b), the heat distribution within the portion of the phase change material component 306 overlying the switching electrode 504 can be controlled. For example, a voltage pulse with a relatively short pulse width and a fast pulse fall time can rapidly heat a portion of the phase change material component 306 to above its melting temperature (T melt), thereby changing the phase change material component 306 from a low resistivity state to a high resistivity state, and the fast fall time of the current pulse can quickly quench the portion of the phase change material component 306 and prevent the phase change material component 306 from recrystallizing when cooling. Therefore, after the current pulse is applied, the phase change material component 306 can maintain its high resistivity state indefinitely.

[0119] In contrast, a voltage pulse with a relatively long pulse width and a long fall time may heat a portion of the phase change material element 306 to above its crystallization temperature (T crys ) but below its melting temperature (T melt ), thereby causing the phase change material component 306 to undergo crystal nucleation, and the long fall time of the voltage pulse can promote crystal growth in the phase change material component 306 as the phase change material component 306 gradually cools, thereby causing the phase change material component 306 to transition from a high resistivity state to a low resistivity state. The phase change material component 306 can remain in this low resistivity state indefinitely until a subsequent current pulse configured to transition the phase change material component 306 to a high resistivity state is applied.

[0120] In some embodiments, the switch electrode 504 may be connected to the switch electrode 504 (see, for example, Figure 5A and Figure 5B ) of the first heater pad 308a and the second heater pad 308b (see, for example, Figure 3A and Figure 4A ) can be electrically coupled to a control circuit system that is configured to selectively control the application of voltage pulses through the switching electrode 504 and the first electrode (304a, 1202a) and the second electrode (304b, 1202b), thereby controlling (i.e., programming) the resistance state of the phase change material component 300. For example, one or both of the first heater pad 308a and the second heater pad 308b can be coupled to one or more transistors 632 via metal interconnect structures (608, 610, 614, 616, 620, 622, 626, 628), such as Figure 7 as shown in .

[0121] Fig.14 1 is a top view of a PCM switch 1300 according to various embodiments, schematically illustrating a signal path across the PCM switch 1300. In this regard, an input signal (eg, a radio frequency (RF) signal) may be transmitted from a first electrical conductor 304a (eg, see Figure 3A and Figure 4A) is transmitted to the first electrode 1202a. In the case where the phase change material element 306 is in the low resistivity state, the PCM switch 1300 is "on" (i.e., the PCM switch is closed), and the signal can be transmitted across the phase change material element 306 to the second electrode 1202b and the second electrical conductor 304b (e.g., see Figure 3A and Figure 4A ), as schematically indicated by arrow 1302. In the case where the phase change material element 306 is in the high resistivity state, the PCM switch 1300 is "off" (ie, the PCM switch is open) and signal transmission to the second electrode 1202b and the second electrical conductor 304b may be blocked.

[0122] Fig.15 1 is a flow chart illustrating the operations of an embodiment method 1500 of making a PCM switch (500a, 500b) according to various embodiments. In operation 1502, the method 1500 may include forming a switching electrode 504. In operation 1504, the method 1500 may include forming an ionic resistance changing material (e.g., a solid electrolyte 502) on the switching electrode 504 in contact with the switching electrode 504. In operation 1506, the method 1500 may include forming a phase change material component 306 on the ionic resistance changing material 502 in contact with the ionic resistance changing material 502. In operation 1508, the method 1500 may include forming a first electrical conductor (e.g., a first electrical conductor 304a) in contact with the phase change material component 306 and the ionic resistance changing material 502. In operation 1510, the method 1500 may include forming a second electrical conductor (e.g., a second electrical conductor 304b) in contact with the phase change material component 306 and the ionic resistance changing material 502.

[0123] The method 1500 may further include forming the first electrical conductor 304a, the second electrical conductor 304b, and the phase change material element 306 to be configured as an RF switch that can switch from an electrically insulating phase that blocks RF signals to a conductive phase that conducts RF signals. The method 1500 may further include forming the switching electrode 504 to include an inert metal and forming the first electrical conductor 304a and the second electrical conductor 304b to each include an oxidizable metal. In other embodiments, the method 1500 may include forming the switching electrode 504 to include an oxidizable metal and forming the first electrical conductor 304a and the second electrical conductor 304b to each include an inert metal.

[0124] With reference to all the drawings and in accordance with various embodiments of the present disclosure, a PCM switch (500a, 500b) is provided. The PCM switch (500a, 500b) may include: a phase change material component 306 including a first electrode (e.g., a first electrical conductor 304a) and a second electrode (e.g., a second electrical conductor 304b); and a direct heating component including an ionic resistance changing material (e.g., a solid electrolyte 502) in contact with the phase change material component 306. The PCM switch (500a, 500b) may further include a switching electrode 504, the switching electrode 504 in contact with the ionic resistance changing material 502, such that the ionic resistance changing material 502 is disposed between the phase change material component 306 and the switching electrode 504.

[0125] In some embodiments, the first electrode 304a and the second electrode 304b may include an oxidizable metal and the switching electrode 504 may include an inert metal. The ionic resistance changing material 502 may have a high resistance state and a low resistance state, and the ionic resistance changing material may be configured to switch from the high resistance state to the low resistance state in response to a positive voltage applied to the first electrode 304a and the second electrode 304b and a negative voltage applied to the switching electrode 504. In this exemplary embodiment (e.g., see Figure 5A ), the ionic resistance changing material 502 may include conductive metal filaments 514 in a low resistance state and may include dissolved metal ions 512 in a high resistance state.

[0126] In various embodiments, the ionic resistance changing material 502 may be configured to: generate heat in the ionic resistance changing material 502 due to ohmic losses in the low resistance state; and transfer heat to the phase change material component 306 by direct contact between the ionic resistance changing material 502 and the phase change material component 306. In other embodiments, the first electrode 304a and the second electrode 304b may include an inert metal and the switching electrode 504 may include an oxidizable metal. The ionic resistance changing material 502 may include a high resistance state and a low resistance state. The ionic resistance changing material 502 may be configured to switch from the high resistance state to the low resistance state in response to a negative voltage applied to the first electrode 304a and the second electrode 304b and a positive voltage applied to the switching electrode 504.

[0127] In this exemplary embodiment (see, for example, Figure 5B ), the ionic resistance changing material 502 may include conductive metal filaments 514 in a low resistance state and may include dissolved metal ions 512 in a high resistance state (e.g., see FIG. 6A to FIG. 6DThe ionic resistance changing material 502 may be configured to: generate heat within the ionic resistance changing material 502 due to ohmic losses in the low resistance state; and transfer the heat to the phase change material component 306 by direct contact between the ionic resistance changing material 502 and the phase change material component 306.

[0128] The phase change material component 306 may include at least one of a germanium telluride compound, an antimony telluride compound, a germanium antimony telluride compound, a germanium antimony compound, an indium germanium telluride compound, an aluminum selenide telluride compound, an indium selenide telluride compound, or an aluminum indium selenide telluride compound. The ionic resistance changing material 502 may include one or more of the following materials in combination with Cu or Ag or a Cu / Ag containing material: AgI, Ag-polymer, Ag 2+δ S, Cu 2-δ S, Cu 2-δ O, Ag-AsS x 、Ag-GeSe x 、Cu-GeSe x 、Ag-GeS x 、Cu-GeS x , Cu-GeTe, Cu-TCNQ, a-Si, SiO 2 、Al 2 O 3 , WO 3 、 2 O 5 、TiO 2 ,GeO x 、ZrO 2 , HfO 2 , graphene oxide, Si 3 N 4 , AlN, and MSQ. In various embodiments, the phase change material component 306 may include a material having a thermal conductivity ranging from approximately 2.5 Watts / meter Kelvin to approximately 10 Watts / meter Kelvin. In addition, the phase change material component 306 may be configured to switch from a conductive phase to an electrically insulating phase in approximately 5.0×10-7 seconds or less.

[0129] In other exemplary embodiments of the present disclosure, a PCM switch (500a, 500b) is provided. The PCM switch (500a, 500b) may include: a phase change material component 306; a first electrical conductor 304a coupled to the phase change material component 306; a second electrical conductor 304b coupled to the phase change material component 306; a direct heating component including an ionic resistance changing material 502 in contact with the phase change material component 306 and configured to supply a heat pulse to the phase change material component 306; and a switching electrode 504 in contact with the ionic resistance changing material 502, such that the ionic resistance changing material 502 is disposed between the phase change material component 306 and the switching electrode 504. The ionic resistance changing material 502 may include a high resistance state and a low resistance state. In addition, the first electrical conductor 304a, the second electrical conductor 304b and the phase change material component 306 may be configured to form an RF switch, which may switch from an electrically insulating phase that blocks an RF signal to a conductive phase that conducts an RF signal.

[0130] In some embodiments, the first electrode 304a and the second electrode 304b may include an oxidizable metal and the switching electrode 504 may include an inert metal. Current passing through the ionic resistance changing material 502 in a low resistance state may generate heat in the ionic resistance changing material 502 due to ohmic losses, and the generated heat may be transferred to the phase change material component 306 through direct contact between the phase change material component 306 and the ionic resistance changing material 502. In other embodiments, the first electrode 304a and the second electrode 304b may include an inert metal and the switching electrode 504 may include an oxidizable metal. Current passing through the ionic resistance changing material 502 in a low resistance state may generate heat in the ionic resistance changing material 502 due to ohmic losses, and the heat may be transferred to the phase change material component 306 through direct contact between the phase change material component 306 and the ionic resistance changing material 502.

[0131] The disclosed embodiment PCM switch may be desirable because the disclosed embodiment PCM switch may include a direct heat source that does not cause material separation issues. In this regard, the ionic resistance changing material 502 (i.e., solid electrolyte) may be formed in direct contact with the phase change material element 306. In a low resistance state, the ionic resistance changing material 502 may form a conductive filament 514 that may support current with a relatively high current density, which may serve as a local heat source. In this manner, the embodiment PCM switch may exhibit relatively efficient heat transfer due to the close proximity of the heat source to the phase change material element.

[0132] Furthermore, the embodiment PCM switch may be less susceptible to separation issues by incorporating a solid electrolyte that is compatible with the phase change material assembly, and thus has greater durability relative to conventional PCM switches having an indirect contact heat source. In this regard, the embodiment PCM switch may exhibit a durability (i.e., durability) that is comparable to or greater than the durability (i.e., durability) of conventional PCM switches having an indirect heat source (and thus requiring a higher switching power). As such, the embodiment PCM switch may not compromise between switching power and performance (i.e., durability), which are characteristics of conventional PCM switches.

[0133] Some embodiments of the present invention provide a phase change material switch, comprising: a phase change material component including a first electrode and a second electrode; and a direct heating component including an ionic resistance changing material in contact with the phase change material component.

[0134] In an embodiment of the present invention, the phase change material switch further includes a switching electrode, wherein the switching electrode is in contact with the ionic resistance changing material, so that the ionic resistance changing material is disposed between the phase change material component and the switching electrode.

[0135] In an embodiment of the present invention, the first electrode and the second electrode include an oxidizable metal and the switching electrode includes an inert metal.

[0136] In an embodiment of the present invention, the ionic resistance changing material includes a high resistance state and a low resistance state, and the ionic resistance changing material is configured to switch from the high resistance state to the low resistance state in response to a positive voltage applied to the first electrode and the second electrode and a negative voltage applied to the switching electrode.

[0137] In an embodiment of the present invention, the ionic resistance changing material comprises conductive metal filaments in the low resistance state, and wherein the ionic resistance changing material comprises dissolved metal ions in the high resistance state.

[0138] In an embodiment of the present invention, the ionic resistance changing material is configured to: generate heat within the ionic resistance changing material due to ohmic loss in the low resistance state; and transfer the heat to the phase change material component through direct contact between the ionic resistance changing material and the phase change material component.

[0139] In an embodiment of the present invention, the first electrode and the second electrode include an inert metal and the switching electrode includes an oxidizable metal.

[0140] In an embodiment of the present invention: the ionic resistance changing material includes a high resistance state and a low resistance state, and the ionic resistance changing material is configured to switch from the high resistance state to the low resistance state in response to a negative voltage applied to the first electrode and the second electrode and a positive voltage applied to the switching electrode.

[0141] In an embodiment of the present invention, the ionic resistance changing material comprises conductive metal filaments in the low resistance state, and wherein the ionic resistance changing material comprises dissolved metal ions in the high resistance state.

[0142] In an embodiment of the present invention, the ionic resistance changing material is configured to: generate heat within the ionic resistance changing material due to ohmic loss in the low resistance state; and transfer the heat to the phase change material component through direct contact between the ionic resistance changing material and the phase change material component.

[0143] In an embodiment of the present invention, the phase change material component includes at least one of germanium telluride compounds, antimony telluride compounds, germanium antimony telluride compounds, germanium antimony compounds, indium germanium telluride compounds, aluminum selenide telluride compounds, indium selenide telluride compounds, or aluminum indium selenide telluride compounds.

[0144] In an embodiment of the present invention, the ionic resistance changing material comprises one or more of the following materials in combination with Cu or Ag or a material containing Cu / Ag: AgI, Ag-polymer, Ag 2+δ S, Cu 2-δ S, Cu 2-δ O, Ag-AsS x 、Ag-GeSe x 、Cu-GeSe x 、Ag-GeS x 、Cu-GeS x , Cu-GeTe, Cu-TCNQ, a-Si, SiO 2 、Al 2 O 3 , WO 3 、 2 O 5 、TiO 2 ,GeO x 、ZrO 2 , HfO 2 , graphene oxide, Si 3 N 4 , AlN and MSQ.

[0145] In an embodiment of the invention, the phase change material component comprises a material having a thermal conductivity ranging from approximately 2.5 Watts / meter-Kervin to approximately 10 Watts / meter-Kervin.

[0146] In an embodiment of the present invention, the phase change material component is configured to be approximately 5.0×10 -7 seconds or shorter than 5.0×10 -7 It switches from the conductive phase to the electrically insulating phase within seconds.

[0147] In addition, other embodiments of the present invention provide a phase change material switch, including: a phase change material component; a first electrical conductor coupled to the phase change material component; a second electrical conductor coupled to the phase change material component; a direct heating component, including an ionic resistance changing material in contact with the phase change material component and configured to supply a heat pulse to the phase change material component; and a switching electrode in contact with the ionic resistance changing material, so that the ionic resistance changing material is disposed between the phase change material component and the switching electrode, wherein the ionic resistance changing material includes a high resistance state and a low resistance state, and wherein the first electrical conductor, the second electrical conductor and the phase change material component form a radio frequency switch, and the radio frequency switch can switch from an electrically insulating phase that blocks the radio frequency signal to a conductive phase that conducts the radio frequency signal.

[0148] In an embodiment of the present invention: the first electrical conductor and the second electrical conductor include an oxidizable metal and the switching electrode includes an inert metal; the current passing through the ionic resistance changing material in the low resistance state generates heat in the ionic resistance changing material due to ohmic losses; and the heat is transferred to the phase change material component through direct contact between the phase change material component and the ionic resistance changing material.

[0149] In an embodiment of the present invention: the first electrical conductor and the second electrical conductor include an inert metal and the switching electrode includes an oxidizable metal; the current flowing through the ionic resistance changing material in the low resistance state generates heat in the ionic resistance changing material due to ohmic losses; and the heat is transferred to the phase change material component through direct contact between the phase change material component and the ionic resistance changing material.

[0150] In addition, other embodiments of the present invention provide a method for forming a phase change material switch, including: forming a switching electrode; forming an ionic resistance changing material on the switching electrode and in contact with the switching electrode; forming a phase change material component on the ionic resistance changing material and in contact with the ionic resistance changing material; forming a first electrical conductor in contact with the phase change material component and the ionic resistance changing material; and forming a second electrical conductor in contact with the phase change material component and the ionic resistance changing material, wherein the first electrical conductor, the second electrical conductor and the phase change material component form a radio frequency switch, and the radio frequency switch can switch from an electrically insulating phase that blocks radio frequency signals to a conductive phase that conducts the radio frequency signals.

[0151] In an embodiment of the present invention, forming the switching electrode further comprises forming the switching electrode to include an inert metal, and wherein forming the first electrical conductor and the second electrical conductor further comprises forming the first electrical conductor and the second electrical conductor from an oxidizable metal.

[0152] In an embodiment of the present invention, forming the switching electrode further includes forming the switching electrode to include an oxidizable metal, and wherein forming the first electrical conductor and the second electrical conductor further includes forming the first electrical conductor and the second electrical conductor from an inert metal.

[0153] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the present disclosure.

Claims

1. A phase change material switch, characterized in that: include: A phase change material component, comprising a first electrode and a second electrode; as well as A direct heating component includes an ionic resistance changing material in contact with the phase change material component.

2. The phase change material switch according to claim 1, characterized in that: The invention further includes a switching electrode, wherein the switching electrode is in contact with the ionic resistance changing material, so that the ionic resistance changing material is disposed between the phase change material component and the switching electrode.

3. The phase change material switch according to claim 2, characterized in that: The first electrode and the second electrode include an oxidizable metal and the switching electrode includes an inert metal.

4. The phase change material switch according to claim 1, characterized in that: The phase change material component includes a material having a thermal conductivity ranging from approximately 2.5 Watts / meter-Kervin to approximately 10 Watts / meter-Kervin.

5. The phase change material switch according to claim 1, characterized in that: The phase change material assembly is configured to be approximately 5.0×10 -7 seconds or shorter than 5.0×10 -7 It switches from the conductive phase to the electrically insulating phase within seconds.

6. A phase change material switch, characterized in that: include: Phase change material components; A first electrical conductor coupled to the phase change material component; a second electrical conductor coupled to the phase change material component; a direct heating component including an ionic resistance changing material in contact with the phase change material component and configured to supply a heat pulse to the phase change material component; and a switching electrode in contact with the ionic resistance changing material so that the ionic resistance changing material is disposed between the phase change material component and the switching electrode, wherein the ionic resistance changing material comprises a high resistance state and a low resistance state, and The first electrical conductor, the second electrical conductor and the phase change material component form a radio frequency switch, and the radio frequency switch can be switched from an electrical insulation phase that blocks radio frequency signals to a conductive phase that conducts the radio frequency signals.

7. The phase change material switch according to claim 6, characterized in that: The first electrical conductor and the second electrical conductor comprise an oxidizable metal and the switching electrode comprises an inert metal; The current passing through the ionic resistance changing material in the low resistance state generates heat within the ionic resistance changing material due to ohmic losses; and The heat is transferred to the phase change material component by direct contact between the phase change material component and the ionic resistance changing material.

8. The phase change material switch according to claim 6, characterized in that: The first electrical conductor and the second electrical conductor comprise an inert metal and the switching electrode comprises an oxidizable metal; current flowing through the ionic resistance changing material in the low resistance state generates heat within the ionic resistance changing material due to ohmic losses; and The heat is transferred to the phase change material component by direct contact between the phase change material component and the ionic resistance changing material.

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