Micro LED packaging structure, LED module and electronic equipment
By growing red, green and blue epitaxial layers on a single substrate and adopting a common cathode electrical connection structure, the problem of complex chip transfer and optical crosstalk in Micro LED full color technology is solved, and an efficient and flexible full color display effect is achieved.
Patent Information
- Application Number
- CN202421781516.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-26
- Publication Date
- 2025-05-06
- Estimated Expiration
- 2034-07-26
AI Technical Summary
The existing Micro LED full-color technology has the problems of complex chip transfer, high uniformity and transfer yield requirements, and the color conversion layer design requires strict reflective layer design to prevent optical crosstalk.
By simultaneously growing three epitaxial layers of red, green and blue on a single substrate and adopting a common cathode electrical connection structure, independent control and luminous intensity adjustment of the single-core red, green and blue epitaxial layer are achieved.
It realizes the flexibility and efficiency of full-color display, improves the application flexibility of LED chips, and reduces the risk of optical crosstalk.
Smart Images
Figure CN222840039U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of LEDs, and in particular to a Micro LED packaging structure, an LED module and an electronic device. Background Art
[0002] Micro LED is an emerging display technology that uses extremely small inorganic self-luminous LEDs as pixels. The size of these LED chips is usually in the micrometer level. Due to its small size, Micro LED can provide extremely high brightness, contrast and color performance, and has the characteristics of long life and high efficiency. It is especially suitable for high-end TVs, large display screens, wearable devices and other display applications. At present, blue-green Micro LED is mainly based on GaN materials, and different emission center wavelengths are achieved by controlling the In component content in the quantum well, while red Micro LED is mainly based on AlGaN materials.
[0003] There are currently two main technical methods for the full-colorization of Micro LED: the first is to transfer the red, green and blue light-emitting chips to the same driving backplane to achieve a red, green and blue integrated full-color array display device, but this method requires multiple transfers of a huge number of chips, and has high requirements on the uniformity of the chips, the transfer yield and the alignment accuracy of the transfer process; the second is to use blue or purple monochrome Micro LEDs and use a color conversion layer, such as a quantum dot layer, to prepare a monolithic integrated full-color array display device, but this method requires a strict design of the reflective layer to prevent optical crosstalk of the backlight Micro LED. Utility Model Content
[0004] Based on this, the purpose of the utility model is to provide a Micro LED packaging structure, LED module and electronic device, which realizes independent control of the luminescence and luminescence intensity of the single-core red, green and blue epitaxial layers by encapsulating a single-core chip with three red, green and blue epitaxial layers grown simultaneously on a single substrate and a common cathode electrical connection structure.
[0005] The utility model provides a Micro LED packaging structure, including a substrate, a bowl-cup bracket, and an LED chip. The substrate is provided with a negative electrode pad and a plurality of positive electrode pads that are not electrically connected to each other. The bowl-cup bracket is arranged on the substrate, and the LED chip is arranged on the bowl-cup bracket. The LED chip includes a substrate and a red light epitaxial layer, a green light epitaxial layer, and a blue light epitaxial layer grown on the substrate. The P-type electrodes of the red light epitaxial layer, the green light epitaxial layer, and the blue light epitaxial layer are electrically connected to different positive electrode pads, respectively, and the N-type electrodes of the red light epitaxial layer, the green light epitaxial layer, and the blue light epitaxial layer are electrically connected to the negative electrode pad.
[0006] The beneficial effects of the utility model include at least: full-color display can be achieved by arranging a red light epitaxial layer, a green light epitaxial layer and a blue light epitaxial layer on the same substrate, and a common cathode electrical connection structure composed of a positive electrode pad and a negative electrode pad on the substrate and a P-type electrode and an N-type electrode of the LED chip is arranged at the same time, so that the red light epitaxial layer, the green light epitaxial layer and the blue light epitaxial layer can be individually controlled, so that the luminous intensity of the single-core red, green and blue epitaxial layers can be independently adjusted, thereby improving the flexibility of practical applications.
[0007] In addition, according to the above-mentioned Micro LED packaging structure of the present invention, the following additional technical features may also be provided:
[0008] Furthermore, the red light epitaxial layer includes a red, green and blue three-wavelength light emitting structure.
[0009] Furthermore, the red, green and blue three-wavelength light-emitting structure includes a red light-emitting structure, a green light-emitting structure and a blue light-emitting structure which are vertically stacked.
[0010] Furthermore, the red light emitting structure, the green light emitting structure and the blue light emitting structure are connected to each other via a tunnel junction.
[0011] Furthermore, the green light epitaxial layer includes a green and blue dual-wavelength light-emitting structure.
[0012] Furthermore, the green-blue dual-wavelength light-emitting structure includes a blue light-emitting structure and a green light-emitting structure which are vertically stacked.
[0013] Furthermore, the blue light emitting structure and the green light emitting structure are connected via a tunnel junction.
[0014] Furthermore, the LED chip is one of a face-up LED chip, a flip-chip LED chip, and a vertical LED chip.
[0015] Based on the same inventive concept, the utility model also provides an LED module, which applies the aforementioned Micro LED packaging structure.
[0016] Based on the same inventive concept, the utility model also provides an electronic device, which applies the aforementioned LED module. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 is a cross-sectional view of the Micro LED packaging structure of the present invention;
[0018] Figure 2 It is a structural schematic diagram of the substrate in the utility model;
[0019] Figure 3 This is a schematic diagram of the structure of the LED chip after the epitaxial layer is grown in the utility model;
[0020] Figure 4 It is a schematic diagram of the structure of the LED chip in the utility model after the epitaxial layer is etched with a red light emitting structure;
[0021] Figure 5 It is a schematic diagram of the structure of the LED chip in the utility model after the epitaxial layer is etched with a green light emitting structure;
[0022] Figure 6 This is a schematic diagram of the structure of the LED chip in the utility model after etching the blue light emitting structure;
[0023] Figure 7 This is a schematic diagram of the structure of the LED chip in the utility model after the SiO2 passivation film is deposited;
[0024] Figure 8 This is a schematic diagram of the structure of the LED chip in the present invention after depositing N-type electrodes and P-type electrodes;
[0025] Fig. 9 It is a schematic diagram of the structure of the red light epitaxial layer in the utility model;
[0026] Description of main component symbols:
[0027] Substrate 100, negative electrode pad 110, positive electrode pad 120, bowl and cup support 200, LED chip 300, substrate 310, red light epitaxial layer 320, green light epitaxial layer 330, blue light epitaxial layer 340, ITO layer 350, SiO2 passivation film 360, red light emitting structure 400, N-type GaN layer 410, red light GaN / Ga0.92ln0.08N superlattice unit 420, blue light GalnN single quantum well layer 430, red light GalnN single quantum well layer 440, P-type AlGaN electron barrier layer 450, P-type GaN layer 460, green light emitting structure 500, N-type GaN layer 510, green light GalnN multi-quantum well layer 520, P-type AlGaN electron barrier layer 530, P-type GaN layer 540, blue light emitting structure 600, N-type GaN layer 610, blue light GalnN multi-quantum well layer 620, P-type AlGaN electron barrier layer 630, P-type GaN layer 640, tunnel junction 700, highly doped P-type GaN layer 710, N-type Ga0.8ln0.2N layer 720, N-type electrode 800, P-type electrode 900;
[0028] The following specific implementation manner will further illustrate the present utility model in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION
[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0030] It should be noted that all directional indications in the embodiments of the present application are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.
[0031] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.
[0032] Reference Figure 1 , a Micro LED packaging structure provided by the utility model includes a substrate 100, a bowl and cup bracket 200, and an LED chip 300. The substrate 100 is usually made of a copper clad plate, such as Figure 2As shown, a negative electrode pad 110 is provided on the surface of the side of the substrate 100 facing the bowl and cup bracket 200. The negative electrode pad 110 can be provided in one or more forms. When multiple negative electrode pads 110 are provided, the negative electrode pads 110 are electrically connected to each other. A plurality of positive electrode pads 120 that are not electrically connected to each other are also provided on the surface of the side of the substrate 100 facing the bowl and cup bracket 200, and the number of positive electrode pads 120 cannot be less than the number of N-type electrodes 800 of the LED chip 300. The bowl and cup bracket 200 is provided on the substrate 100, and the LED chip 300 is solid-crystaled in the placement cavity on the bowl and cup bracket 200. In order to realize single-core full-color display, specifically, the LED chip 300 includes a substrate 310 and a red epitaxial layer 320, a green epitaxial layer 330, and a blue epitaxial layer 340 grown on the substrate 310 by a deposition process, and the P-type electrodes 900 of the red epitaxial layer 320, the green epitaxial layer 330, and the blue epitaxial layer 340 are respectively electrically connected to different positive electrode pads 120, and the N-type electrodes 800 of the red epitaxial layer 320, the green epitaxial layer 330, and the blue epitaxial layer 340 are all electrically connected to the negative electrode pad 110. When in use, the light emission and light emission intensity of the red epitaxial layer 320, the green epitaxial layer 330, and the blue epitaxial layer 340 are controlled by controlling the input current of different positive electrode pads 120, so as to realize the full-color display of the LED chip 300 and the adjustment of the light emission intensity of each display color. Optionally, the substrate 310 can be any one of a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, and a gallium oxide substrate. Further, the LED chip 300 can be any one of a face-up LED chip, a flip-chip LED chip, and a vertical LED chip.
[0033] In some optional embodiments, the red epitaxial layer 320 includes a red, green and blue three-wavelength light emitting structure, that is, the red epitaxial layer 320 can emit three primary colors of light and full-color light alone. Fig. 9As shown, the red, green and blue three-wavelength light-emitting structure includes a vertically stacked red light-emitting structure 400, a green light-emitting structure 500 and a blue light-emitting structure 600. Further, the red light-emitting structure 400, the green light-emitting structure 500 and the blue light-emitting structure 600 are connected to each other through a tunnel junction 700. The tunnel junction 700 works through the quantum tunneling effect and allows carriers to pass through even in the presence of a potential barrier. In the vertically stacked red, green and blue three-wavelength light-emitting structure, the tunnel junction 700 helps to reduce voltage drop, improve current efficiency, and achieve better color mixing and control. The blue light emitting structure 600 includes a sequentially grown N-type GaN layer 610, a 2-period blue light GalnN multi-quantum well layer 620, a P-type AlGaN electron barrier layer 630, and a P-type GaN layer 640. The green light emitting structure 500 includes a sequentially grown N-type GaN layer 510, a 2-period green light GalnN multi-quantum well layer 520, a P-type AlGaN electron barrier layer 530, and a P-type GaN layer 540. The red light emitting structure 400 includes a sequentially grown N-type Ga The tunnel junction 700 includes a highly doped P-type GaN layer 710 and an N-type Ga0.8ln0.2N layer 720 grown in sequence, wherein the Mg doping concentration in the highly doped P-type GaN layer 710 exceeds 10 20 cm – 3
[0034] Preferably, the stacking order of the red light emitting structure 400 , the green light emitting structure 500 and the blue light emitting structure 600 is: the bottom layer is the blue light emitting structure 600 , the middle layer is the green light emitting structure 500 , and the top layer is the red light emitting structure 400 .
[0035] In some optional embodiments, the green light epitaxial layer 330 includes a green-blue dual-wavelength light-emitting structure, that is, the green light epitaxial layer 330 can emit green and blue light separately. Specifically, the green-blue dual-wavelength light-emitting structure includes a vertically stacked blue light-emitting structure 600 and a green light-emitting structure 500. Further, the blue light-emitting structure 600 and the green light-emitting structure 500 are connected to each other through a tunnel junction 700.
[0036] Preferably, the stacking order of the blue light emitting structure 600 and the green light emitting structure 500 is: the lower layer is the blue light emitting structure 600 , and the upper layer is the green light emitting structure 500 .
[0037] Taking the bottom layer as a blue light emitting structure 600, the middle layer as a green light emitting structure 500, and the top layer as a red light emitting structure 400 as an example, the manufacturing process of the LED chip 300 includes the following steps:
[0038] Step S100: Figure 3 As shown, a blue epitaxial layer 340, a green epitaxial layer 330, a red epitaxial layer 320, and an ITO layer 350 are epitaxially grown on a substrate 310 (specifically a gallium nitride substrate) by using a metal organic chemical vapor deposition (MOCVD) method.
[0039] Step S200: Figure 4 As shown, the epitaxial layer is etched by Mesa until the substrate 310, and finally a plurality of independent grains are formed on the substrate 310;
[0040] Step S300: Figure 5 As shown, the epitaxial layer is etched by an inductively coupled plasma etcher to obtain a grain that does not include the red light emitting structure 400, and an N-type mesa and a P-type mesa are formed on the grain that includes the red light emitting structure 400;
[0041] Step S400: Figure 6 As shown, the epitaxial layer is etched by an inductively coupled plasma etcher to obtain a grain that does not include the green light emitting structure 500, and an N-type mesa and a P-type mesa are formed on the grain that includes the green light emitting structure 500, and an N-type mesa and a P-type mesa are formed on the grain that includes the blue light emitting structure 600;
[0042] Step S500: Figure 7 As shown, the ITO layer 350 is annealed at 600° C. for 30 min, and then a SiO2 passivation film 360 is formed on the surface of the epitaxial layer by magnetron sputtering technology;
[0043] Step S600: Figure 8 As shown, an N-type electrode 800 and a P-type electrode 900 are deposited in the hollow region of the SiO 2 passivation film 360 by electron beam evaporation technology.
[0044] Based on the same inventive concept, the utility model also provides an LED module, which applies the aforementioned Micro LED packaging structure.
[0045] Based on the same inventive concept, the utility model also provides an electronic device, which applies the aforementioned LED module.
[0046] In addition, the present application provides examples of various specific processes and materials, but a person skilled in the art may be aware of the application of other processes and / or the use of other materials.
[0047] In this application, unless otherwise clearly specified and limited, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "fixation" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0048] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0049] In addition, in this application, descriptions such as "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.
[0050] In the description of the present utility model, unless otherwise clearly stipulated and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0051] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.
[0052] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.
[0053] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.
Claims
1. A Micro LED packaging structure, characterized in that: The Micro LED packaging structure includes: A substrate having a negative electrode pad and a plurality of positive electrode pads that are not electrically connected to each other; A bowl and cup support, wherein the bowl and cup support is arranged on the base plate; An LED chip is arranged on the bowl and cup bracket, and the LED chip includes a substrate and a red light epitaxial layer, a green light epitaxial layer, and a blue light epitaxial layer grown on the substrate, the P-type electrodes of the red light epitaxial layer, the green light epitaxial layer, and the blue light epitaxial layer are electrically connected to different positive electrode pads, respectively, and the N-type electrodes of the red light epitaxial layer, the green light epitaxial layer, and the blue light epitaxial layer are electrically connected to the negative electrode pad.
2. The Micro LED packaging structure according to claim 1, characterized in that: The red light epitaxial layer includes a red, green and blue three-wavelength light emitting structure.
3. The Micro LED packaging structure according to claim 2, characterized in that: The red, green and blue three-wavelength light-emitting structure includes a red light-emitting structure, a green light-emitting structure and a blue light-emitting structure which are vertically stacked.
4. The Micro LED packaging structure according to claim 3, characterized in that: The red light emitting structure, the green light emitting structure and the blue light emitting structure are connected to each other via a tunnel junction.
5. The Micro LED packaging structure according to claim 1, wherein: The green light epitaxial layer includes a green and blue dual-wavelength light-emitting structure.
6. The Micro LED packaging structure according to claim 5, characterized in that: The green-blue dual-wavelength light-emitting structure includes a blue light-emitting structure and a green light-emitting structure which are vertically stacked.
7. The Micro LED packaging structure according to claim 6, characterized in that: The blue light emitting structure and the green light emitting structure are connected via a tunnel junction.
8. The Micro LED packaging structure according to any one of claims 1 to 7, characterized in that: The LED chip is one of a face-up LED chip, a flip-chip LED chip, and a vertical LED chip.
9. An LED module, characterized in that: The Micro LED packaging structure as described in any one of claims 1 to 8 is applied.
10. An electronic device, characterized in that: The LED module as claimed in claim 9 is used.