Gas homogenizing structure and semiconductor coating equipment

Abstract

The utility model provides a gas uniformizing structure and semiconductor coating equipment, and belongs to the technical field of semiconductor production equipment.The gas uniformizing structure comprises a vacuum cavity, a first cavity, a second cavity, a gas inlet and a gas outlet, the first anti-adhesion plate is arranged on the circumferential side wall of the first cavity, and an air distribution channel and air distribution holes are formed in the first anti-adhesion plate. When the process gas is fed, the process gas firstly fills the gas distribution channel and then enters the first chamber through the gas distribution holes, so that the gas inlet uniformity of the first chamber in the circumferential direction can be improved. After entering the gas equalizing gaps from the gas distribution holes, the process gas firstly fills the gas equalizing gaps and then uniformly enters the first cavity from the gas equalizing gaps, so that the condition that the air pressure at the opening of the hole channel is high in the gas inlet process of the hole channel can be avoided, and the gas inlet uniformity is improved.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor production equipment, and specifically relates to a gas uniformity structure and a semiconductor coating device using the gas uniformity structure. Background Art

[0002] Magnetron sputtering coating is achieved through the interaction of electric and magnetic fields. When electrons are accelerated to fly toward the substrate under the action of the electric field, they collide with argon atoms, ionizing a large number of argon ions and electrons. The electrons fly toward the substrate, and the argon ions are accelerated to bombard the target material under the action of the electric field, sputtering a large number of target atoms and ions, which are deposited on the substrate to form a film.

[0003] The coating chamber's atmosphere is controlled by a vacuum system and a process gas system. The vacuum system evacuates the chamber to a certain vacuum level, while the process gas system then refills the chamber with process gas to maintain the chamber's pressure within a set range. In existing technologies, the pressure at the process gas inlet is often too high, hindering uniform gas distribution and affecting coating uniformity. Utility Model Content

[0004] The present application aims to solve at least one of the above-mentioned technical problems existing in the prior art. To this end, in a first aspect, the present application provides an air uniformity structure that can improve the uniformity of the intake air.

[0005] In a second aspect, the present application proposes a semiconductor coating device using the above-mentioned gas homogenizing structure.

[0006] The gas equalization structure according to the embodiment of the first aspect of the present application includes:

[0007] A vacuum cavity, wherein a first chamber is provided inside the vacuum cavity, and a target is provided in the first chamber of the vacuum cavity;

[0008] a first anti-fogation plate, the first anti-fogation plate being arranged on a circumferential side wall of the first chamber, an air distribution channel and air distribution holes being arranged inside the first anti-fogation plate, the air distribution channel being distributed along the circumference of the first chamber, one end of the air distribution hole being connected to the air distribution channel, and the other end of the air distribution hole being connected to an end of the first anti-fogation plate close to the target material;

[0009] Among them, the cross-sectional size of the gas distribution channel is larger than the cross-sectional size of the gas distribution hole, an air distribution gap is formed between the first anti-adhesion plate and the target material, the gas distribution hole is connected to the air distribution gap, and the vacuum chamber is provided with an air inlet, which is connected to the gas distribution channel.

[0010] The gas distribution structure according to the embodiment of the present application has at least the following beneficial effects: When the process gas is introduced into the gas distribution structure of this embodiment, the process gas enters the gas distribution channel through the gas inlet hole. Because the size of the gas distribution channel is larger than the size of the gas distribution hole, the process gas will first fill the gas distribution channel before entering the first chamber through the gas distribution hole, which can improve the uniformity of gas intake in the first chamber in the circumferential direction. In addition, the gas distribution hole is connected to the first chamber through the gas distribution gap. After the process gas enters the gas distribution gap from the gas distribution hole, it will first fill the gas distribution gap and then evenly enter the first chamber from the gas distribution gap. Because the gas distribution gap is arranged around the circumference of the first chamber, it can avoid the situation where the gas pressure at the hole mouth is high during the hole intake, thereby improving the uniformity of gas intake.

[0011] According to some embodiments of the present application, the target material includes a target backing plate and a target body, the target body is arranged on the side of the target backing plate close to the first anti-fog plate, a second chamber is formed between the circumferential side of the target body and the circumferential side wall of the first chamber, the first anti-fog plate is provided with an extension portion, the extension portion extends into the second chamber, and the uniform air gap is formed between the extension portion and the target backing plate, the target body and the side wall of the first chamber.

[0012] According to some embodiments of the present application, the peripheral side of the target body has a first sidewall, and along the direction from the target backing plate to the target body, the first sidewall is close to the sidewall of the first chamber.

[0013] According to some embodiments of the present application, the air distribution holes are connected to the air uniformity gap on a side of the extension portion close to the side wall of the first chamber.

[0014] According to some embodiments of the present application, the air equalization structure further includes an air intake sleeve, one end of the air intake sleeve is inserted into the air intake hole, and the other end abuts against the first anti-attachment plate.

[0015] According to some embodiments of the present application, the gas equalization structure further includes:

[0016] a second anti-fog plate, the second anti-fog plate being arranged on a side of the first anti-fog plate facing away from the target material and surrounding a circumferential side wall of the first chamber;

[0017] A pressure plate is arranged in the first chamber, and the pressure plate is fixed to one end of the second anti-adhesion plate close to the target material. An exhaust channel is formed between the pressure plate and the second anti-adhesion plate, and the exhaust channel has at least two flow sections with different gas flow directions.

[0018] According to some embodiments of the present application, the second anti-fouling plate includes:

[0019] a first extending section, the first extending section extending in a direction toward the center of the first chamber;

[0020] a second extension section, the second extension section extending from an end of the first extension section toward the target;

[0021] The pressing plate comprises:

[0022] a first matching section, the first matching section being located on a side of the second extending section close to the center of the first chamber, and the first matching section extending toward the target;

[0023] a second mating section extending from an end of the first mating section in a direction away from the target to a side of the second extension section away from the center of the first chamber;

[0024] The first matching section and the second matching section form two flow sections with different gas flow directions on both sides of the second extending section.

[0025] According to some embodiments of the present application, the first anti-fog plate extends to a side of the second anti-fog plate close to the center of the first chamber.

[0026] According to some embodiments of the present application, the first anti-fog plate is insulated from the vacuum chamber.

[0027] A semiconductor coating device according to an embodiment of the second aspect of the present application includes the gas equalization structure of any of the above embodiments.

[0028] The semiconductor coating device according to the embodiment of the present application has at least the following beneficial effects: When the process gas is introduced into the semiconductor coating device of this embodiment, the process gas enters the gas distribution channel through the gas inlet hole. Since the size of the gas distribution channel is larger than the size of the gas distribution hole, the process gas will first fill the gas distribution channel before entering the first chamber through the gas distribution hole, which can improve the uniformity of gas intake in the circumferential direction of the first chamber. In addition, the gas distribution hole is connected to the first chamber through the gas distribution gap. After the process gas enters the gas distribution gap from the gas distribution hole, it will first fill the gas distribution gap and then evenly enter the first chamber from the gas distribution gap. Since the gas distribution gap is arranged around the circumference of the first chamber, it can avoid the situation where the gas pressure at the hole mouth position in the hole intake is high, thereby improving the uniformity of gas intake.

[0029] Additional aspects and advantages of the present application will be given in part in the following description, and some additional aspects and advantages will become obvious from the following description, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The present application is further described below with reference to the accompanying drawings and embodiments, wherein:

[0031] Figure 1 This is a schematic diagram of the overall structure of the present application;

[0032] Figure 2 This is a schematic diagram of the installation of the first anti-stick plate and the second anti-stick plate;

[0033] Figure 3 A structural diagram of a first anti-seizure plate;

[0034] Figure 4 This is a structural schematic diagram of the air distribution channel and air distribution holes. DETAILED DESCRIPTION

[0035] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0036] In the description of this application, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application.

[0037] In the description of this application, "several" means more than one, "plurality" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0038] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0039] In the description of this application, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples.

[0040] Reference Figures 1 to 4 , an air equalization structure according to an embodiment of the present application includes:

[0041] A vacuum chamber 100 is provided with a first chamber 101 inside the vacuum chamber 100 , and a target 300 is provided in the first chamber 101 of the vacuum chamber 100 ;

[0042] A first anti-fog plate 400 is provided on a circumferential side wall of the first chamber 101. An air distribution channel 401 and air distribution holes 402 are provided inside the first anti-fog plate 400. The air distribution channel 401 is distributed along the circumference of the first chamber 101. One end of the air distribution hole 402 is connected to the air distribution channel 401, and the other end of the air distribution hole 402 is connected to the end of the first anti-fog plate 400 close to the target 300.

[0043] Among them, the cross-sectional size of the gas distribution channel 401 is larger than the cross-sectional size of the gas distribution hole 402, an air distribution gap 403 is formed between the first anti-adhesion plate 400 and the target material 300, the gas distribution hole 402 is connected to the air distribution gap 403, and the vacuum chamber 100 is provided with an air inlet 102, and the air inlet 102 is connected to the gas distribution channel 401.

[0044] It is understood that, because the size of the gas distribution channel 401 is larger than the size of the gas distribution hole 402, when the process gas enters, it will first fill the gas distribution channel 401, then enter the gas distribution gap 403 from the gas distribution hole 402, and then enter the first chamber 101 through the gas distribution gap 403, which can improve the circumferential gas intake uniformity of the first chamber 101. In addition, the gas distribution hole 402 is connected to the first chamber 101 through the gas distribution gap 403. After the process gas enters the gas distribution gap 403 from the gas distribution hole 402, it will first fill the gas distribution gap 403, and then evenly enter the first chamber 101 from the gas distribution gap 403. Since the gas distribution gap 403 is arranged circumferentially around the first chamber 101, it can avoid the situation where the gas pressure at the hole mouth is high during the hole intake, thereby improving the gas intake uniformity.

[0045] Reference Figure 2In some embodiments of the present application, the target 300 includes a target backing plate 301 and a target body 302. The target backing plate 301 is disposed transversely within the first chamber 101, dividing the first chamber 101 into an upper chamber 1011 and a lower chamber 1012. The target body 302 is disposed on a side of the target backing plate 301 proximal to the first anti-fog plate 400, i.e., proximal to the lower chamber 1012. The vacuum chamber 100 has a magnetron 200 disposed within the upper chamber 1011 and a substrate stage 700 disposed within the lower chamber 1012. A gap is formed between the circumferential side of the target body 302 and the circumferential sidewalls of the first chamber 101, thereby forming a second chamber 303.

[0046] The first anti-fog plate 400 is provided with an extension portion 404, which extends into the second chamber 303. The extension portion 404 maintains a distance from the sidewalls of the first chamber 101, the target backing plate 301, and the target body 302, thereby forming an air gap 403 between the extension portion 404 and the target backing plate 301, the target body 302, and the sidewalls of the first chamber 101.

[0047] The structural arrangement of this embodiment extends the length of the gas-distributing gap 403 through the provision of the second chamber 303, providing sufficient time and space for the process gas to be uniformly distributed after entering the gas-distributing gap 403 through the gas distribution holes 402, thereby improving gas intake uniformity. Furthermore, the structural design is simple, eliminating the need for drilling or slotting components, which helps control production costs.

[0048] Reference Figure 3 In some embodiments of the present application, the peripheral side of the target body 302 has a first side wall, and the first side wall is close to the side wall of the first chamber 101 along the direction from the target backing plate 301 to the target body 302.

[0049] It can be understood that since the target backing plate 301 and the joint between the target material body 302 and the target backing plate 301 are usually welded with materials such as indium, the positive ions are attracted by the target voltage and bombard the target material body 302 in a straight line. The first side wall in this embodiment is inclined outward in the direction away from the target backing plate 301, which can effectively prevent ions from bombarding the target backing plate 301 and the joint between the target material body 302 and the target backing plate 301, thereby avoiding bombarding materials such as indium to pollute the coating environment.

[0050] Reference Figure 3 In some embodiments of the present application, the air distribution holes 402 are connected to the air distribution gap 403 on the side of the extension portion 404 close to the sidewall of the first chamber 101 . The width of the air distribution gap 403 is greater than the diameter of the air distribution holes 402 .

[0051] The structural arrangement of this embodiment can effectively improve the gas uniformity within the gas uniformity gap 403. Furthermore, because the end of the gas uniformity gap 403 near the sidewall of the first chamber 101 is connected to the gas distribution holes 402, and the end away from the sidewall of the first chamber 101 is connected to the first chamber 101, there is sufficient length and space for gas uniformity, further improving gas uniformity.

[0052] Reference Figure 3 In some embodiments of the present application, the air equalization structure further includes an air intake sleeve 104 , one end of the air intake sleeve 104 is inserted into the air intake hole 102 , and the other end abuts against the first anti-attachment plate 400 .

[0053] Specifically, a sealing ring is provided around the air intake sleeve 104, which is clamped between the first anti-seizure plate 400 and the sidewall of the first chamber 101. With this embodiment, the air intake sleeve 104 is inserted into the air intake hole 102, and the air intake sleeve 104 connects the air intake hole 102 with the first anti-seizure plate 400, thereby improving sealing performance.

[0054] It is understandable that holes are also provided at positions on the first anti-fog plate 400 opposite to the air inlet holes 102 to achieve communication with the air distribution channel 401 .

[0055] Reference Figure 1 and Figure 2 In some embodiments of the present application, the gas homogenizing structure further includes:

[0056] The second anti-fog plate 500 is disposed on a side of the first anti-fog plate 400 facing away from the target 300 and surrounds the circumferential side wall of the first chamber 101;

[0057] The pressure plate 600 is arranged in the first chamber 101. The pressure plate 600 is fixed to one end of the second anti-adhesion plate 500 close to the target material 300. An exhaust channel is formed between the pressure plate 600 and the second anti-adhesion plate 500. The exhaust channel has at least two flow sections with different gas flow directions.

[0058] The vacuum chamber 100 is usually evacuated from the bottom. With the structural arrangement of this embodiment, the substrate is pressed by the pressure plate 600 during operation, and the pressure plate 600 and the second anti-fouling plate 500 are used to form an exhaust channel, which can ensure the exhaust uniformity of the area between the substrate and the target material 300, avoid excessive local exhaust speed, and help improve the coating quality.

[0059] Reference Figure 2 Specifically, in some embodiments of the present application, the second anti-fog plate 500 includes:

[0060] A first extension section 501, the first extension section 501 extending in a direction toward the center of the first chamber 101;

[0061] A second extension section 502 , extending from the end of the first extension section 501 toward the target 300 ;

[0062] The pressing plate 600 includes:

[0063] a first mating section 601 , which is located on one side of the second extension section 502 close to the center of the first chamber 101 and extends toward the target 300 ;

[0064] The second matching section 602 extends from the end of the first matching section 601 in a direction away from the target 300 to a side of the second extension section 502 away from the center of the first chamber 101 ;

[0065] The first matching section 601 and the second matching section 602 form two flow sections with different gas flow directions on both sides of the second extending section 502 .

[0066] Reference Figure 2 , adopting the structural arrangement of this embodiment, the inner side of the second anti-attachment plate 500 has a second extension section 502 extending upward, and the peripheral side of the pressure plate 600 has a first matching section 601 and a second matching section 602 inverted on the second extension section 502. When vacuuming from the bottom, the gas in the space above the pressure plate 600 flows downward from the outside of the second matching section 602, around the second matching section 602 and the second extension section 502, and then enters the space between the first matching section 601 and the second extension section 502, thereby improving the uniformity of suction and avoiding the situation where the suction speed is fast near the pump port and slow in other areas.

[0067] The suction design of this embodiment combined with the design of air intake uniformity in the aforementioned embodiment can effectively improve the film formation quality.

[0068] Reference Figure 2 and Figure 3 In some embodiments of the present application, there is a gap between the first anti-fog plate 400 and the second anti-fog plate 500 , and the first anti-fog plate 400 extends to a side of the second anti-fog plate 500 close to the center of the first chamber 101 .

[0069] This embodiment provides a gap between the first anti-fog plate 400 and the second anti-fog plate 500 to prevent deformation or installation errors in either plate from affecting the other, thereby improving installation accuracy. Furthermore, the first anti-fog plate 400 extends inside the second anti-fog plate 500, preventing coating particles from passing through the gap and contaminating the sidewalls of the vacuum chamber.

[0070] In some embodiments of the present application, the first anti-fog plate 400 is insulated from the vacuum chamber 100. This insulation allows the first anti-fog plate 400 to be electrically suspended, thereby addressing situations such as a small distance between the first anti-fog plate 400 and the target 300 or an overly high voltage on the target 300.

[0071] Reference Figures 1 to 4 In some embodiments of the present application, the gas homogenizing structure includes:

[0072] The vacuum chamber 100 is provided with a vacuum chamber inside. A target 300 is disposed transversely within the vacuum chamber, which is divided into an upper chamber 1011 and a lower chamber 1012 by the target 300. A magnetron 200 is disposed within the upper chamber 1011, and a substrate stage 700 with adjustable height is disposed within the lower chamber 1012. The substrate stage 700 is used to support a substrate for height adjustment. The target 300 includes a target backing plate 301 and a target body 302. The target body 302 is located on the side of the target backing plate 301 near the lower chamber 1012. A gap is maintained between the edge of the target body 302 and the sidewall of the vacuum chamber to form a second chamber 303.

[0073] The sidewall of the lower chamber 1012 is provided with a mounting step near the target 300 , on which an insulating block 103 is mounted. An air inlet 102 is provided on the sidewall of the vacuum chamber 100 , which is connected to the lower chamber 1012 and is higher than the insulating block 103 .

[0074] The first anti-fog plate 400 is positioned in the lower chamber 1012 and overlaps the upper end of the insulating block 103, thereby maintaining insulation from the vacuum chamber 100. An air distribution channel 401 is arranged inside the first anti-fog plate 400, surrounding the sidewalls of the lower chamber 1012. Multiple air distribution holes 402 are positioned upward from the center of the air distribution channel 401. Holes for connecting the air distribution channel 401 are positioned directly opposite the air inlet 102 on the first anti-fog plate 400. The air distribution channel 401 is a circular channel with a diameter of 4 mm to 20 mm. The air distribution holes 402 have a diameter of 0.5 mm to 2 mm. The spacing between adjacent air distribution holes 402 along the length of the air distribution channel 401 is 5 mm to 50 mm. The upper end of the first anti-fog plate 400 has an extension 404 extending into the second chamber 303. The upper end of the first anti-fog plate 400 and the extension 404 are both spaced apart from the target 300. The air distribution holes 402 are located outside the extension 404 (i.e., on the side near the sidewall of the lower chamber 1012). Furthermore, an air inlet sleeve 104 is positioned on the first anti-fog plate 400, facing the air inlet hole 102. The air inlet sleeve 104 is inserted into the air inlet hole 102. A sealing ring is mounted around the air inlet sleeve 104, clamping it between the sidewall of the lower chamber 1012 and the first anti-fog plate 400.

[0075] The second anti-scratch plate 500 is positioned at the edge of the mounting step and extends downward. The second anti-scratch plate 500 maintains a distance from the insulating block 103, the first anti-scratch plate 400, and the sidewalls of the lower chamber 1012. A first extension section 501 and a second extension section 502 are provided at the lower end of the second anti-scratch plate 500. The first extension section 501 extends toward the center of the first chamber 101, while the second extension section 502 extends upward from the end of the first extension section 501.

[0076] The pressure plate 600 is fixed in the lower chamber 1012. The peripheral side of the pressure plate 600 has a first mating section 601 and a second mating section 602 inverted on the second extension section 502. When vacuum is drawn from the bottom, the gas in the space above the pressure plate 600 flows downward from the outside of the second mating section 602, around the second mating section 602 and the second extension section 502, and then enters between the first mating section 601 and the second extension section 502.

[0077] The embodiment of the present application also proposes a semiconductor coating device, including the gas uniformity structure of any of the above embodiments. It can be understood that in the semiconductor coating device of this embodiment, when the process gas is fed into the process gas, the process gas enters the gas distribution channel 401 through the gas inlet hole 102. Since the size of the gas distribution channel 401 is larger than the size of the gas distribution hole 402, the process gas will first fill the gas distribution channel 401 before entering the first chamber 101 through the gas distribution hole 402, which can improve the gas intake uniformity of the first chamber 101 in the circumferential direction. In addition, the gas distribution hole 402 is connected to the first chamber 101 through the gas uniformity gap 403. After the process gas enters the gas uniformity gap 403 from the gas distribution hole 402, it will first fill the gas uniformity gap 403, and then evenly enter the first chamber 101 from the gas uniformity gap 403. Since the gas uniformity gap 403 is arranged circumferentially around the first chamber 101, it can avoid the situation where the gas pressure at the hole mouth position in the hole intake is high, thereby improving the gas intake uniformity.

[0078] The embodiments of the present application have been described in detail above with reference to the accompanying drawings. However, the present application is not limited to the above embodiments. Various modifications can be made within the scope of knowledge possessed by ordinary technicians in the relevant technical field without departing from the purpose of the present application. In addition, the embodiments of the present application and the features of the embodiments can be combined with each other unless there is a conflict.

Claims

1. A gas uniformity structure, characterized in that: include: A vacuum cavity, wherein a first chamber is provided inside the vacuum cavity, and a target is provided in the first chamber of the vacuum cavity; a first anti-fogation plate, the first anti-fogation plate being arranged on a circumferential side wall of the first chamber, an air distribution channel and air distribution holes being arranged inside the first anti-fogation plate, the air distribution channel being distributed along the circumference of the first chamber, one end of the air distribution hole being connected to the air distribution channel, and the other end of the air distribution hole being connected to an end of the first anti-fogation plate close to the target material; Among them, the cross-sectional size of the gas distribution channel is larger than the cross-sectional size of the gas distribution hole, an air distribution gap is formed between the first anti-adhesion plate and the target material, the gas distribution hole is connected to the air distribution gap, and the vacuum chamber is provided with an air inlet, which is connected to the gas distribution channel.

2. The gas equalization structure according to claim 1, characterized in that: The target material includes a target backing plate and a target body. The target body is arranged on a side of the target backing plate close to the first anti-fog plate. A second chamber is formed between the circumferential side of the target body and the circumferential side wall of the first chamber. The first anti-fog plate is provided with an extension portion, which extends into the second chamber. The uniform air gap is formed between the extension portion and the target backing plate, the target body and the side wall of the first chamber.

3. The gas equalization structure according to claim 2, characterized in that: The target body has a first side wall on its circumference. Along a direction from the target backing plate to the target body, the first side wall is close to a side wall of the first chamber.

4. The gas equalization structure according to claim 2, characterized in that: The air distribution hole is connected to the air uniformity gap at a side of the extension portion close to the side wall of the first chamber.

5. The gas equalization structure according to claim 1, characterized in that: The air equalization structure further includes an air intake sleeve, one end of which is inserted into the air intake hole, and the other end of which abuts against the first anti-attachment plate.

6. The gas equalization structure according to claim 1, characterized in that: The gas equalization structure further comprises: a second anti-fog plate, the second anti-fog plate being arranged on a side of the first anti-fog plate facing away from the target material and surrounding a circumferential side wall of the first chamber; A pressure plate is arranged in the first chamber, and the pressure plate is fixed to one end of the second anti-adhesion plate close to the target material. An exhaust channel is formed between the pressure plate and the second anti-adhesion plate, and the exhaust channel has at least two flow sections with different gas flow directions.

7. The gas equalization structure according to claim 6, characterized in that: The second anti-slip plate comprises: a first extending section, the first extending section extending in a direction toward the center of the first chamber; a second extension section, the second extension section extending from an end of the first extension section toward the target; The pressing plate comprises: a first matching section, the first matching section being located on a side of the second extending section close to the center of the first chamber, and the first matching section extending toward the target; a second mating section extending from an end of the first mating section in a direction away from the target to a side of the second extension section away from the center of the first chamber; The first matching section and the second matching section form two flow sections with different gas flow directions on both sides of the second extending section.

8. The gas equalization structure according to claim 6, characterized in that: The first anti-slip plate extends to a side of the second anti-slip plate close to the center of the first chamber.

9. The gas equalization structure according to claim 1, characterized in that: The first anti-adhesion plate is insulated from the vacuum chamber.

10. A semiconductor coating device, characterized in that: The invention comprises the gas uniformity structure according to any one of claims 1 to 9.

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