High-voltage silicon stack with high heat dissipation efficiency
By setting heat dissipation fins on the packaging shell of the high-voltage silicon stack and using thermally conductive silicone grease for heat transfer, the problem of low heat dissipation efficiency of existing high-voltage silicon stacks is solved, achieving efficient heat dissipation and improving overall heat dissipation performance.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-24
- Publication Date
- 2026-03-13
AI Technical Summary
Existing high-voltage silicon stacks cannot achieve efficient heat dissipation during use, resulting in low heat dissipation efficiency.
By setting heat dissipation fins on the top and bottom of the package and connecting them with fastening bolts, combined with the use of thermal grease, heat can be transferred from the silicon stack body to the fins and dissipated into the air, thus enhancing the heat dissipation effect.
This improved the heat dissipation efficiency of the high-voltage silicon stack, achieving efficient heat dissipation and enhancing overall heat dissipation performance.
Smart Images
Figure CN223993890U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of high-voltage silicon stack technology, specifically a high-voltage silicon stack with high heat dissipation efficiency. Background Technology
[0002] A high-voltage silicon diode stack (HPSD) is an electronic component used for high-frequency, high-voltage rectification. It typically consists of multiple silicon high-frequency diodes connected in series, externally encapsulated in a high-frequency ceramic package. This design gives the HPSD high voltage withstand capability, allowing it to operate at voltages from several kilovolts to tens of thousands of volts. Due to its unidirectional conductivity, the current increases rapidly when the applied forward voltage exceeds a certain value; conversely, the current increases dramatically when the applied reverse voltage exceeds the breakdown voltage, exhibiting high impedance characteristics. Therefore, it is widely used in DC high-voltage equipment as a basic rectifier element. The manufacturing process of a HPSD includes pin connection, chip integration, and packaging. To improve heat dissipation and efficiency, modern HPSD designs emphasize both integration and heat dissipation performance.
[0003] Existing high-voltage silicon stacks cannot achieve efficient heat dissipation during use, resulting in low heat dissipation efficiency. Therefore, there is an urgent need for a high-voltage silicon stack with high heat dissipation efficiency to solve the above-mentioned technical problems. Utility Model Content
[0004] The purpose of this invention is to provide a high-voltage silicon stack with high heat dissipation efficiency to solve the problem mentioned in the background art that the existing high-voltage silicon stacks cannot achieve efficient heat dissipation during use, resulting in low heat dissipation efficiency.
[0005] To achieve the above objectives, this utility model provides the following technical solution:
[0006] A high-voltage silicon stack with high heat dissipation efficiency includes a package shell and a silicon stack body. The silicon stack body is disposed inside the package shell. A first pin is disposed at one end of the silicon stack body, a second pin is disposed at the other end of the silicon stack body, and a third pin is disposed in the middle of the silicon stack body. Connection holes are provided on both the top and bottom sides of the package shell, and through holes are provided on both the left and right ends of the package shell. The first pin and the second pin pass through the two through holes on the right end of the package shell, and the third pin passes through the through hole on the left end of the package shell. A first heat dissipation fin is disposed on the top of the package shell, and a second heat dissipation fin is disposed on the bottom of the package shell. Both ends of the first heat dissipation fin are connected to the two connection holes on the top of the package shell through a first fastening bolt, and both ends of the second heat dissipation fin are connected to the two connection holes on the bottom of the package shell through a second fastening bolt.
[0007] As a preferred embodiment of this utility model, internal threads are provided on the inner sidewalls of the connection holes opened at the top and bottom of the encapsulation shell.
[0008] As a preferred embodiment of this invention, thermally conductive silicone grease is applied between the bottom of the first heat sink fin and the top of the package shell.
[0009] As a preferred embodiment of this invention, thermally conductive silicone grease is applied between the top of the second heat sink fin and the contact surface between the bottom of the package shell.
[0010] As a preferred embodiment of this utility model, the cross-sectional shape of the through hole is rectangular.
[0011] As a preferred embodiment of this invention, the first pin and the second pin are located on the same side of the package housing.
[0012] Compared with the prior art, the present invention has the following beneficial effects:
[0013] This invention, by setting a first heat dissipation fin, a first fastening bolt, a connecting hole, a second heat dissipation fin, and a second fastening bolt, allows the heat generated when the silicon stack body is working to be transferred to the encapsulation shell. The encapsulation shell then transfers the heat to the first and second heat dissipation fins, which then dissipate the heat into the surrounding air. By simultaneously dissipating heat from the bottom and top sides, efficient heat dissipation can be achieved, thus improving heat dissipation efficiency. Attached Figure Description
[0014] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:
[0015] Figure 1 This is a schematic diagram of the overall structure of this utility model;
[0016] Figure 2 This is a cross-sectional view of the overall structure of this utility model;
[0017] Figure 3 This is a three-dimensional structural diagram of the packaging shell of this utility model.
[0018] In the diagram: 1. Encapsulation shell; 2. Silicon stack body; 3. First pin; 4. Second pin; 5. Third pin; 6. First heat sink fin; 7. Connecting hole; 8. Through hole; 9. First fastening bolt; 10. Second heat sink fin; 11. Second fastening bolt. Detailed Implementation
[0019] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the utility model. Furthermore, it should be noted that, for ease of description, only the parts relevant to the utility model are shown in the accompanying drawings. In the embodiments of the present utility model, the different types of cross-sectional lines are not labeled according to national standards, nor do they specify material requirements for the components; they are used to distinguish the cross-sectional views of the components in the drawings.
[0020] Please see Figure 1-3 A high-voltage silicon stack with high heat dissipation efficiency includes a package shell 1 and a silicon stack body 2. The silicon stack body 2 is disposed inside the package shell 1. A first pin 3 is disposed at one end of the silicon stack body 2, a second pin 4 is disposed at the other end of the silicon stack body 2, and a third pin 5 is disposed in the middle of the silicon stack body 2. Connection holes 7 are provided on both the top and bottom sides of the package shell 1, and through holes 8 are provided on both the left and right ends of the package shell 1. The first pin 3 and the second pin 4 pass through the two through holes 8 on the right end of the package shell 1, and the third pin 5 passes through the through hole 8 on the left end of the package shell 1. A first heat dissipation fin 6 is disposed on the top of the package shell 1, and a second heat dissipation fin 10 is disposed on the bottom of the package shell 1. Both ends of the first heat dissipation fin 6 are connected to the two connection holes 7 on the top of the package shell 1 by a first fastening bolt 9, and both ends of the second heat dissipation fin 10 are connected to the two connection holes 7 on the bottom of the package shell 1 by a second fastening bolt 11.
[0021] The inner walls of the connection holes 7 at the top and bottom of the encapsulation housing 1 are provided with internal threads.
[0022] Thermal grease is applied between the bottom of the first heat sink fin 6 and the top of the package housing 1.
[0023] Thermal grease is applied between the top of the second heat sink 10 and the contact surface between the top of the second heat sink fin and the bottom of the package housing 1.
[0024] Among them, the cross-sectional shape of the through hole 8 is a rectangular structure.
[0025] The first pin 3 and the second pin 4 are located on the same side of the package housing 1.
[0026] The working principle and usage process of this utility model are as follows: First, during installation, thermally conductive silicone grease is applied between the bottom of the first heat dissipation fin 6 and the top of the encapsulation shell 1. Similarly, thermally conductive silicone grease is applied between the top of the second heat dissipation fin 10 and the bottom of the encapsulation shell 1. Then, both ends of the first heat dissipation fin 6 are threadedly connected to the two connecting holes 7 on the top of the encapsulation shell 1 using first fastening bolts 9. Then, both ends of the second heat dissipation fin 10 are threadedly connected to the two connecting holes 7 on the bottom of the encapsulation shell 1 using second fastening bolts 11. This completes the installation, allowing the first and second heat dissipation fins 6 and the encapsulation shell 1 to communicate through thermal conductivity. The thermal grease ensures tight contact, allowing heat to flow rapidly between the first and second heat dissipation fins 6 and the encapsulation shell 1, thereby improving the overall heat dissipation effect. The heat generated by the silicon stack body 2 during operation is transferred to the encapsulation shell 1, and then the encapsulation shell 1 transfers the heat to the first and second heat dissipation fins 6 and 10 through the thermally conductive thermal grease. Subsequently, the heat is dissipated into the surrounding air through the first and second heat dissipation fins 6 and 10 to achieve heat dissipation. By simultaneously dissipating heat from the bottom and top sides, efficient heat dissipation can be achieved, improving heat dissipation efficiency. The contents not described in detail in this specification are prior art known to those skilled in the art.
[0027] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the utility model involved in this application is not limited to the technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.
Claims
1. A high-voltage silicon stack with high heat dissipation efficiency, comprising a package housing (1) and a silicon stack body (2), characterized in that: The inside of the packaging shell (1) is provided with a silicon pile body (2), one end of the silicon pile body (2) is provided with a first pin (3), the other end of the silicon pile body (2) is provided with a second pin (4), the middle of the silicon pile body (2) is provided with a third pin (5), the top and bottom of the packaging shell (1) are provided with connecting holes (7), the left and right ends of the packaging shell (1) are provided with through holes (8), the first pin (3) and the second pin (4) pass through the two through holes (8) on the right end of the packaging shell (1), the third pin (5) passes through the through hole (8) on the left end of the packaging shell (1), the top of the packaging shell (1) is provided with a first heat dissipation fin (6), the bottom of the packaging shell (1) is provided with a second heat dissipation fin (10), both ends of the first heat dissipation fin (6) are connected with the two connecting holes (7) on the top of the packaging shell (1) through the first fastening bolt (9), both ends of the second heat dissipation fin (10) are connected with the two connecting holes (7) on the bottom of the packaging shell (1) through the second fastening bolt (11).
2. A high heat dissipating efficiency high voltage silicon stack as claimed in claim 1, wherein: The inner side wall of the connecting hole (7) opened on the top and bottom of the packaging shell (1) is provided with an internal thread.
3. The high heat dissipation efficiency high voltage silicon stack of claim 1, wherein: The contact surface between the bottom of the first heat dissipation fin (6) and the top of the packaging shell (1) is coated with heat-conducting silicone grease.
4. The high heat dissipating efficiency high voltage silicon stack of claim 1, wherein: The contact surface between the top of the second heat dissipation fin (10) and the bottom of the packaging shell (1) is coated with heat-conducting silicone grease.
5. The high heat dissipating efficiency high voltage silicon stack of claim 1, wherein: The cross-sectional shape of the through hole (8) is a rectangular structure.
6. The high heat dissipating efficiency high voltage silicon stack of claim 1, wherein: The first pin (3) and the second pin (4) are located on the same side of the packaging shell (1).