Aluminum anode structure with high reflectivity

Abstract

The utility model discloses an aluminum anode structure with strong reflectivity, which is characterized in that a light-emitting layer is arranged on a substrate, an anode structure is arranged below the light-emitting layer, a spacing layer is covered outside the anode structure, an AL layer is covered outside the spacing layer, and open pores penetrating to the anode structure are arranged at the tops of the spacing layer and the AL layer. According to the (TI / TIN / AL / TIN / SiO2 / ITO) anode structure, the thickness of the anode ITO can be fixed, the transmittance is not lost, the R / G / B wave band reflectivity can be improved by more than 12% through the thickness change of SiO2, and the anode structure can be used for manufacturing high-brightness color display devices.

Description

Technical Field

[0001] This utility model relates to MicroOLED technology, and more particularly to the field of aluminum anode technology. Background Technology

[0002] With the rapid development of display technology, OLED (organic light-emitting diode) technology has been widely used. Compared with traditional AMOLED display technology, micro-OLED has been widely used in VR and AR fields. Currently, mainstream VR and AR products all use micro-OLED displays.

[0003] Due to the special application scenarios of micro-displays, the display screen needs to have higher brightness. Traditional micro-OLEDs use a (TI / TIN / AL / TIN / ITO) anode structure, which requires the use of ITO of different thicknesses to achieve R / G / B multi anode reflectivity enhancement. The transmittance of ITO of different thicknesses varies greatly, resulting in low reflectivity data.

[0004] For example, the patent document with publication number CN113812014B, publication date May 16, 2023, entitled "An Array Substrate and Its Fabrication Method and Display Panel", discloses an array substrate comprising a driving circuit board and a first electrode layer, an insulating layer, and an anode structure stacked thereon in sequence. The anode structure comprises a reflective layer, an intermediate dielectric layer, and a transparent conductive layer disposed sequentially away from the driving circuit board. The array substrate has a first pixel area, a second pixel area, and a third pixel area. The anode structure comprises a first anode structure, a second anode structure, and a third anode structure. The first electrode layer comprises a first sub-part, a second sub-part, and a third sub-part. The first anode structure is connected to the first sub-part through a first via formed in the insulating layer, the second anode structure is connected to the second sub-part through a second via formed in the insulating layer, and the third anode structure is connected to the third sub-part through a third via formed in the insulating layer. The surfaces of the insulating layer that contact the first anode structure, the second anode structure, and the third anode structure are flush, and the thickness of the intermediate dielectric layer in the second anode structure, the first anode structure, and the third anode structure increases sequentially.

[0005] Therefore, it is necessary to design an anode structure (TI / TIN / AL / TIN / SiO2 / ITO) that can maximize the reflectivity of the R / G / B bands while maintaining a fixed ITO thickness. Summary of the Invention

[0006] The technical problem to be solved by this utility model is to realize a MicroOled aluminum anode structure with high reflectivity, which can improve the reflectivity of R / G / B bands by more than 12% while keeping the thickness of the anode ITO fixed.

[0007] To achieve the above objectives, the technical solution adopted by this utility model is as follows: a high reflectivity aluminum anode structure, a light-emitting layer is provided on the substrate, the anode structure is arranged under the light-emitting layer, the anode structure is covered by a spacer layer, the spacer layer is covered by an AL layer, and the top of the spacer layer and the AL layer are provided with an opening that penetrates to the anode structure.

[0008] The anode structure includes a bottom layer and an intermediate layer, as well as an ITO layer wrapped around the bottom layer and the intermediate layer. The bottom layer is a TI, TIN, AL, or TIN material layer structure, and the intermediate layer is a SiO2 material layer structure.

[0009] Each set of three consecutive anode structures constitutes a light-emitting unit. The thickness of the intermediate layer of the anode in each light-emitting unit is different, and they are used to present the three colors R, G, and B respectively.

[0010] The ITO layer thickness is the same for each of the aforementioned anode structures.

[0011] Each of the anode structures has a light-emitting unit within its light-emitting layer.

[0012] The spacer layer is a SiO2 material layer structure.

[0013] The anode structure is an anode structure applied to AMOLED or micro-OLED panels.

[0014] This invention relates to an anode structure (TI / TIN / AL / TIN / SiO2 / ITO). The thickness of the ITO anode can be fixed without sacrificing transmittance. By varying the thickness of the SiO2, the reflectivity of the R / G / B bands can be increased by more than 12%, which can be used to manufacture high-brightness color display devices. Attached Figure Description

[0015] The following is a brief explanation of the content represented by each of the accompanying drawings in this utility model specification:

[0016] Figure 1 This is a schematic diagram of a MicroOled aluminum anode structure with high reflectivity. Detailed Implementation

[0017] The following description, with reference to the accompanying drawings, details the specific implementation of this utility model, including the shape and structure of each component, the relative positions and connections between the parts, the function and working principle of each part, the manufacturing process, and the operation and use methods. This will help those skilled in the art to have a more complete, accurate, and in-depth understanding of the inventive concept and technical solution of this utility model.

[0018] Highly reflective aluminum anode structure, such as Figure 1As shown, the substrate has a light-emitting layer, and light-emitting units are arranged in a matrix on the light-emitting layer. Each light-emitting unit has an independent anode structure below it, namely the aluminum anode structure of this utility model. The anode structure is an independent columnar structure. After fabrication, it generally presents a frustum-shaped structure with a smaller top and a larger bottom. It is divided into three layers: a bottom layer that contacts the light-emitting layer, a spacer layer covering the bottom layer, and an ITO layer that wraps around the bottom layer and the spacer layer. A spacer layer is covered outside the anode structure. The spacer layer is generally made of SiO2 material. An Al layer is then covered outside the spacer layer. The Al layer and the anode structure are separated by SiO2 to prevent current from passing through.

[0019] The top of the intermediate spacer layer and the AL layer has an opening that extends to the anode structure, meaning the top of the ITO layer is exposed. An AL reflective layer is added to the sidewall. The light reflected from the side will be reflected a second time after passing through the AL layer on the sidewall, increasing the resonance of the light, enhancing the intensity of the reflected light, and effectively improving the reflectivity.

[0020] The bottom layer of the anode structure consists of Ti, Tin, Al, and Tin material layers, while the intermediate layer is a SiO2 material layer. The thickness of the SiO2 layer in the intermediate layer varies to achieve the representation of the three colors R, G, and B. Therefore, each series of three anode structures constitutes a light-emitting unit. The thickness of the intermediate layer in each light-emitting unit is different, used to represent the three colors R, G, and B respectively. The thinnest is B-SiO2, the middle thickness is G-SiO2, and the thickest is R-SiO2. Intermediate layers of different thicknesses need to be fabricated independently during manufacturing. This design allows for a uniform ITO layer thickness, while varying the thickness of the B / G / R SiO2 layers to represent the three colors. This anode film layer scheme can be used in the OLED color display field, including AMOLED and micro-OLED.

[0021] The aforementioned anode structure, namely (TI / TIN / AL / TIN / SiO2 / ITO), can be achieved through the following steps: TI / TIN / AL / TIN film deposition, SiO2 film deposition with reduced film edges, and Top ITO film deposition. The specific steps are as follows:

[0022] The first step is to fabricate the underlying TI / TIN / AL / TIN / B-SiO2 layer;

[0023] Continuous Depo TI / TIN / AL / TIN / B-SiO2 thin film on SI substrate;

[0024] The second step is the production of B / G / R SiO2;

[0025] BHM fabrication: BHM (SIN) coating → adhesive application & exposure & development → etching to form a BHM hard mask;

[0026] GHM fabrication: G-SiO2 coating → GHM (SIN) coating → coating, exposure and development → etching to form a GHM hard mask;

[0027] RHM fabrication: R-SiO2 coating → RHM (SIN) coating → coating & exposure & development → etching to form RHM hard mask;

[0028] Forming B / G / R SiO2: Performing Anode Etch to form the underlying B / G / R Anode;

[0029] Top ITO coating: Top ITO deposition is performed on the entire surface;

[0030] PDL1 Mask ETCH: PDL1 (used for pixel definition layer) is coated, exposed, and developed to expose the B / G / R Space area for Space etching, followed by PDL1 ETCH to complete the Space opening function;

[0031] PDL2 Mask ETCH: Perform PDL1 (pixel definition layer) coating, exposure, and development to open up the area above B / G / R ITO;

[0032] The aforementioned anode structure, applicable to color display devices, primarily involves adding a SiO2 layer above the top TIN layer in a (TI / TIN / AL / TIN / ITO) structure to form a (TI / TIN / AL / TIN / SiO2 / ITO) structure. Finally, an AL layer is added to the sidewalls to achieve hole injection. This results in secondary reflection of light reaching the sides, enhancing the intensity of the reflected light. This anode structure can be used for fabricating anodes in high-reflectivity display devices. When fabricating Multi-Anode R / G / B using this method, the ITO thickness can be fixed while the SiO2 thickness can be varied, resulting in an overall reflectivity improvement of over 12% (TI / TIN / AL / TIN / ITO structure: 83% across the entire wavelength range; TI / TIN / AL / TIN / SiO2 / ITO / AL structure: 95% across the entire wavelength range). This anode film layer design can be used in the OLED color display field, including AMOLED and micro-OLED.

[0033] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution of the present invention, or the direct application of the inventive concept and technical solution of the present invention to other occasions without modification, are all within the protection scope of the present invention.

Claims

1. A high reflectivity aluminum anode structure, a substrate is provided with a light-emitting layer, and an anode structure is arranged under the light-emitting layer, characterized in that: The anode structure is covered by a spacer layer, and the spacer layer is covered by an AL layer. The top of the spacer layer and the AL layer has an opening that penetrates into the anode structure. ​ 2. The high reflectivity aluminum anode structure of claim 1, wherein: The anode structure includes a bottom layer and an intermediate layer, as well as an ITO layer wrapped around the bottom layer and the intermediate layer. The intermediate layer is a SiO2 material layer structure.

3. The high reflectivity aluminum anode structure of claim 2, wherein: Each set of three consecutive anode structures constitutes a light-emitting unit. The thickness of the intermediate layer of the anode in each light-emitting unit is different, and they are used to present the three colors R, G, and B respectively.

4. The high reflectivity aluminum anode structure of claim 3, wherein: The ITO layer thickness is the same for each of the aforementioned anode structures.

5. The high reflectivity aluminum anode structure of claim 4, wherein: Each of the anode structures has a light-emitting unit within its light-emitting layer.

6. The high reflectivity aluminum anode structure of any of claims 1-5, wherein: The spacer layer is a SiO2 material layer structure.

7. The high reflectivity aluminum anode structure of claim 6, wherein: The anode structure is an anode structure applied to AMOLED or micro-OLED panels.

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