Ion implantation apparatus
By incorporating a heating device and a back gas heating structure into the ion implantation equipment, the problem of low heating efficiency was solved, achieving uniform wafer temperature and consistent electrical performance, thereby increasing the equipment's production capacity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- KINGSTONE SEMICONDUCTOR CO LTD
- Filing Date
- 2025-06-12
- Publication Date
- 2026-06-12
Smart Images
Figure CN224355218U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor equipment, and more particularly to an ion implantation device. Background Technology
[0002] In semiconductor manufacturing, ion implantation is a crucial doping process that alters the electrical properties of semiconductor materials by implanting specific types of ions. As semiconductor devices evolve towards smaller sizes and higher performance, the demands on the precision and efficiency of ion implantation processes continue to increase. Thermal implantation, as an advanced ion implantation technique, enables implantation at higher temperatures, helping to reduce lattice damage and improve impurity activation rates. During thermal implantation, the wafer temperature typically needs to be maintained within the range of 100°C to 600°C to achieve various implantation characteristics within the wafer. This temperature control is crucial for ensuring the uniformity of implanted ion distribution and the consistency of electrical properties.
[0003] Currently, the production capacity of ion implantation equipment still needs to be improved. Utility Model Content
[0004] The problem solved by this utility model embodiment is to provide an ion implantation device to improve the heating efficiency of wafers, thereby increasing the production capacity of the ion implantation device.
[0005] To address the aforementioned problems, this utility model provides an ion implantation device, comprising: an optical path assembly, which sequentially includes, along the optical path direction: an ion source for generating plasma; an extraction electrode for extracting plasma from the ion source to form an ion beam; a quality analyzer for screening target ions in the ion beam; a beam uniformity adjustment device for adjusting the uniformity of the ion beam; an energy filtering device for screening target ions that meet a predetermined energy; an electron gun for providing electrons to the ion beam; and a process chamber, comprising: a scanning robot; a first carrier disk disposed on the scanning robot, the first carrier disk being used to carry a wafer, and the scanning robot being used to move the first carrier disk to implant the entire wafer with the target ions; and an ion receiver. The device includes a collection unit for collecting target ions not yet implanted into the wafer; a wafer transport assembly, which sequentially includes: a front-end module for receiving external wafers to be ion implanted and transporting ion-implanted wafers to the outside of the ion implantation equipment; a vacuum loading device disposed between the transport cavity and the front-end module for freely switching between atmospheric and vacuum environments; a transport cavity including: an alignment platform for aligning the circumferential position of the wafer to be ion implanted; and a transport robot for transferring the wafer between the vacuum loading device, the transport cavity, and the process cavity; wherein a first heating device is disposed on the first carrier disk; and / or a second heating device is disposed within the transport cavity, the first heating device and the second heating device being used to heat the wafer.
[0006] Optionally, the first carrier disk is provided with a first heating device, including: the first carrier disk includes an electrostatic chuck and a heating element embedded inside the electrostatic chuck.
[0007] Optionally, the second heating device provided in the transmission cavity includes: a second carrier plate provided in the transmission cavity, the second carrier plate including an electrostatic chuck and a heating element embedded inside the electrostatic chuck.
[0008] Optionally, the first heating device further includes: a back-gas heating structure, the back-gas heating structure being used to transfer the heat emitted by the heating element to the wafer; and / or, the second heating device further includes: a back-gas heating structure, the back-gas heating structure being used to transfer the heat emitted by the heating element to the wafer.
[0009] Optionally, the back-gas heating structure includes: a heating groove located on the surface of the electrostatic chuck; a back-gas pipeline passing through the electrostatic chuck, with one end of the back-gas pipeline communicating with the heating groove; a gas source communicating with the other end of the back-gas pipeline and used to inject gas into the heating groove through the back-gas pipeline; a suction branch communicating with the back-gas pipeline; and a suction pump communicating with the other end of the suction branch, wherein the suction pump controls the gas pressure in the heating groove through the suction branch.
[0010] Optionally, the heating groove includes a plurality of heating sub-grooves extending along a first direction and a second direction and arranged in parallel at intervals, wherein the heating sub-grooves extending along the first direction intersect with the heating sub-grooves extending along the second direction; or, the heating groove includes a plurality of heating sub-grooves surrounding the center of the surface of the electrostatic chuck.
[0011] Optionally, the back gas pipeline includes: multiple back gas branch pipelines, one end of which is connected to a heating trench at a different location; and a back gas main pipeline, one end of which is connected to the other end of the multiple back gas branch pipelines, and the other end of which is connected to the gas source.
[0012] Optionally, the gas source may include an inert gas.
[0013] Optionally, the heating element may include a heating wire or a fluid heating element.
[0014] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:
[0015] The ion implantation equipment provided in this embodiment of the present invention has a first heating device on the first carrier disk; and / or a second heating device is provided in the transfer cavity. The first heating device and the second heating device are used to heat the wafer. By preheating the wafer with the second heating device, the temperature of the wafer can be increased before the ion implantation process. Correspondingly, during the ion implantation process, the first heating device can maintain the wafer at a higher temperature, thereby improving the process capacity of the ion implantation equipment. Attached Figure Description
[0016] Figures 1 to 3 This is a schematic diagram of an embodiment of the ion implantation device of this utility model. Detailed Implementation
[0017] Currently, ion implantation equipment typically heats wafers using infrared lamps. Since the wafer material is silicon, silicon has a low absorption rate of infrared radiation, requiring a long time to heat the wafer to the predetermined temperature, resulting in low heating efficiency. Alternatively, significantly increasing the heating power of the infrared lamps can improve heating efficiency but also significantly increase energy consumption.
[0018] Some methods use heating pads to heat the wafers placed on them, but the heating efficiency is also very low. This is mainly because the contact surface between the heating pad and the wafer is formed by many point contacts from a microscopic perspective. The total area of the point contacts is very small, and the heat conduction efficiency is extremely low, which affects the production capacity of the ion implantation equipment.
[0019] To address the aforementioned technical problems, this utility model provides an ion implantation device, comprising: an optical path assembly, which sequentially includes, in the optical path direction: an ion source for generating plasma; an extraction electrode for extracting plasma from the ion source to form an ion beam; a quality analyzer for screening target ions in the ion beam; a beam uniformity adjustment device for adjusting the uniformity of the ion beam; an energy filtering device for screening target ions that meet a predetermined energy; an electron gun for providing electrons to the ion beam; and a process chamber, comprising: a scanning robot; a first carrier disk disposed on the scanning robot, the first carrier disk being used to carry a wafer, and the scanning robot being used to move the first carrier disk to implant the entire wafer with the target ions; ion A collection device is used to collect target ions that have not been implanted into the wafer; a wafer transport assembly, which sequentially includes, during the wafer transport process: a front-end module for receiving external wafers to be ion implanted and transporting ion-implanted wafers to the outside of the ion implantation equipment; a vacuum loading device disposed between the transport cavity and the front-end module for freely switching between atmospheric and vacuum environments; a transport cavity including: an alignment platform for aligning the circumferential position of the wafer to be ion implanted; and a transport robot for transferring the wafer between the vacuum loading device, the transport cavity, and the process cavity; wherein a first heating device is disposed on the first carrier disk; and / or a second heating device is disposed within the transport cavity, the first heating device and the second heating device being used to heat the wafer.
[0020] The ion implantation equipment provided in this embodiment of the present invention has a first heating device on the first carrier disk; and / or a second heating device is provided in the transfer cavity. The first heating device and the second heating device are used to heat the wafer. By preheating the wafer with the second heating device, the temperature of the wafer can be increased before the ion implantation process. Correspondingly, during the ion implantation process, the first heating device can maintain the wafer at a higher temperature, thereby improving the process capacity of the ion implantation equipment.
[0021] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0022] Figures 1 to 3 This is a schematic diagram of the structure of an embodiment of the ion implantation device of this utility model. Wherein, Figure 1 This is a diagram of the ion implantation structure. Figure 2 This is a schematic diagram of the structure of the first heating device and the second heating device. Figure 3 yes Figure 2 Enlarged view within the dashed circle.
[0023] An ion implantation device includes: an optical path assembly, which sequentially includes, in the optical path direction: an ion source 100 for generating plasma; an extraction electrode 101 for extracting plasma from the ion source 100 to form an ion beam; a quality analyzer 102 for screening target ions in the ion beam; a beam uniformity adjustment device 103 for adjusting the uniformity of the ion beam; an energy filter 104 for screening target ions that meet a predetermined energy level to pass through; an electron gun 105 for providing electrons to the ion beam; and a process chamber 106, which includes: a scanning robot 107; a first carrier disk 199 disposed on the scanning robot 107, the first carrier disk 199 for carrying a wafer, the scanning robot 107 for moving the first carrier disk 199 to implant the entire wafer with the target ions; and an ion collection device 108 for collecting... The device includes: a collection of target ions not yet implanted into the wafer; a wafer transport assembly, which sequentially includes, during wafer transport: a front-end module 109 for receiving external wafers to be ion implanted and transporting ion-implanted wafers to the outside of the ion implantation device; a vacuum loading device 110 disposed between the transport cavity 113 and the front-end module 109 for freely switching between atmospheric and vacuum environments; a transport cavity 113 including: an alignment platform 112 for aligning the circumferential position of the wafer to be ion implanted; and a transport robot 111 for transferring the wafer between the vacuum loading device 110, the transport cavity 113, and the process cavity 106; wherein a first heating device is disposed on the first carrier disk 199; and / or a second heating device 120 is disposed in the transport cavity 113, the first heating device and the second heating device 120 being used to heat the wafer.
[0024] Specifically, a first heating device is provided on the first carrier disk 199 of the ion implantation equipment; and / or a second heating device 120 is provided in the transfer cavity 113. The first heating device and the second heating device 120 are used to heat the wafer. By preheating the wafer with the second heating device 120, the temperature of the wafer can be increased before the ion implantation process. Correspondingly, during the ion implantation process, the first heating device can maintain the wafer at a higher temperature, thereby improving the process capacity of the ion implantation equipment.
[0025] It should be noted that the ion source 100 is the core component of the optical path assembly, used to generate plasma. Plasma is an ionized gas containing positive ions and electrons.
[0026] The ion source 100 ionizes gases (such as doped gases like arsenic and boron) using an electric or magnetic field to generate plasma.
[0027] As an example, the ion source 100 type includes a radio frequency inductively coupled source (RF source), an electromagnetic excitation source (ECR source), or an indirect heating cathode ion source (IHC).
[0028] Specifically, the extraction electrode 101 is used to extract the plasma generated in the ion source 100 and form an ion beam.
[0029] It should be noted that the extraction electrode 101 extracts positive ions from the plasma by applying an electric field, forming a directional ion beam.
[0030] As an example, the extraction electrode 101 typically consists of multiple electrodes that control the direction and energy of the ion beam through a precise potential difference.
[0031] Specifically, the quality analyzer 102 is used to screen target ions, allowing target ions to pass through while non-target ions are retained, ensuring that only target ions enter the subsequent process chamber 106 and avoiding non-target ions from contaminating the wafer.
[0032] It should be noted that the mass analyzer 102 typically uses a magnetic field to screen ions based on their mass-to-charge ratio (m / q).
[0033] As an example, the mass analyzer type 102 includes quadrupole and magnetic analyzer.
[0034] Specifically, the beam uniformity adjustment device 103 is used to adjust the uniformity of the ion beam, ensure that the ion beam is evenly distributed on the wafer surface, eliminate the divergence and focusing non-uniformity of the ion beam, and ensure that the implantation dose on the wafer surface is uniform.
[0035] As an example, the focusing and divergence of the ion beam can be adjusted using an electrostatic or magnetic lens system.
[0036] Specifically, the energy filtering device 104 is used to screen target ions that meet the predetermined energy, ensuring that only ions with the required energy enter the process chamber 106, ensuring that the ions injected into the wafer have precise energy, avoiding process deviations caused by energy fluctuations, and improving injection accuracy to ensure the consistency of the wafer's electrical performance.
[0037] As an example, energy filtration is achieved through an electrostatic field, typically using an energy filter.
[0038] It should be noted that the electron gun 105 is used to provide electrons to the ion beam to neutralize the positive charge accumulated on the wafer surface.
[0039] As an example, the electron gun 105 generates an electron beam through thermal emission or field emission.
[0040] It should be noted that the process chamber 106 is the core part of the ion implantation equipment, responsible for implanting the ion beam, which has been screened and adjusted by the optical path components, into the wafer.
[0041] Specifically, the scanning robot 107 is a key moving component in the process cavity 106, used to drive the first carrier disk and the wafer on it to move back and forth.
[0042] It should be noted that by reciprocating, the ion beam is ensured to uniformly cover the entire wafer surface, avoiding uneven local implantation, while improving implantation efficiency and reducing wafer overheating or damage caused by fixed ion beam irradiation.
[0043] As an example, the scanning robot 107 typically employs a high-precision linear motor or mechanical transmission system to ensure stability and repeatability of movement.
[0044] Specifically, the scanning speed and path can be programmed and controlled according to the wafer size and process requirements.
[0045] In this embodiment, the first carrier disk 199 is disposed on the scanning robot 107. The first carrier disk 199 is used to carry the wafer, and the scanning robot 107 is used to drive the first carrier disk 199 to move so that the target ions are implanted into the entire wafer.
[0046] In this embodiment, the first carrier 199 is provided with a first heating device, including: the first carrier 199 includes an electrostatic chuck 160 and a heating element 130 embedded inside the electrostatic chuck 160.
[0047] It should be noted that the first carrier disk 199 is used to carry and adsorb the wafer, and to heat the wafer during the implantation process.
[0048] In this embodiment, the first carrier disk 199 includes an electrostatic chuck 160 and a heating element 130 embedded inside the electrostatic chuck 160.
[0049] Specifically, the electrostatic chuck 160 is used to carry and hold the wafer, ensuring that the wafer remains stable during heating and implantation.
[0050] As an example, heating element 130 includes a heating wire or a fluid heating element.
[0051] In this embodiment, the electrostatic chuck 160 of the first carrier disk 199 includes: an electrostatic electrode 131, which is embedded in the electrostatic chuck 160 and close to the adsorption surface of the electrostatic chuck 160, and the heating element 130 is located below the electrostatic electrode 131.
[0052] Specifically, the heating element 130 is located below the electrostatic electrode 131, which enables the electrostatic adsorption layer formed by the electrostatic electrode 131 and the heating layer formed by the heating element 130 to form a vertically layered structure, thus avoiding mutual interference.
[0053] It should be noted that the electrostatic electrode 131, which is embedded in the electrostatic chuck 160 and close to the upper surface of the electrostatic chuck 160, can improve the electrostatic adsorption force generated by the electrostatic electrode 131, thereby improving the adsorption stability of the wafer.
[0054] Specifically, the ion collection device 108 is used to collect target ions that have not been implanted into the wafer, so as to prevent the target ions that have not been implanted into the wafer from causing pollution to the equipment or the environment.
[0055] As an example, the ion beam collecting device 108 is typically made of graphite material, which has good electrical conductivity and corrosion resistance.
[0056] As an example, the ion beam collecting device 108 includes multiple collecting electrodes for capturing unimplanted ions in different directions.
[0057] The Equipment Front End Module (EFEM) 109 is the interface part of the ion implantation equipment, which is used to receive the wafer to be implanted from the outside and to transmit the implanted wafer to the outside of the equipment.
[0058] Specifically, EFEMs are typically equipped with robotic arms or conveyors for wafer input and output.
[0059] It should be noted that EFEM interfaces with external wafer transport systems (such as automated wafer transport systems) to support automated production.
[0060] In this embodiment, the vacuum loading device 110 is disposed between the transmission cavity 113 and the front-end module 109 of the equipment, and is used for free switching between atmospheric environment and vacuum environment.
[0061] As an example, the vacuum loading device 110 is equipped with a quick-opening valve and a vacuum pump.
[0062] During wafer transport, the vacuum loading device 110 can quickly evacuate or fill with gas to ensure a smooth transition of the wafer between different environments, avoid the wafer being affected by atmospheric pollutants during transport, and ensure the cleanliness of the process environment.
[0063] Specifically, the transfer cavity 113 is the core part of the wafer transfer assembly, responsible for wafer alignment, preheating and transfer.
[0064] The transfer cavity 113 is a vacuum or controlled atmosphere environment to prevent the wafer from being contaminated during the transfer process.
[0065] Specifically, the alignment platform 112 is used to precisely align the circumferential position of the wafer to be implanted, ensuring the accuracy of the wafer's position in subsequent ion implantation processes.
[0066] As an example, precise alignment of wafers is achieved through optical or mechanical alignment marks.
[0067] Specifically, by precisely aligning the circumferential position of the wafer, the positional accuracy of the wafer during the ion implantation process is ensured, avoiding process defects caused by positional deviations.
[0068] It should be noted that the transfer robot 11 in the transfer cavity 113 is used to transfer the wafer between the vacuum loading device 110, the transfer cavity 113 and the process cavity 106.
[0069] As an example, the transfer robot 111 employs a high-precision robotic arm or conveyor belt system.
[0070] In this embodiment, a second heating device 120 is provided in the transmission cavity 113, and the second heating device 120 is used to heat the wafer.
[0071] It should be noted that a second heating device 120 is provided in the transfer cavity 113. The second heating device 120 is used to heat the wafer. By preheating the wafer with the second heating device 120, the temperature of the wafer can be increased before the ion implantation process. Correspondingly, during the ion implantation process, the temperature of the wafer can be rapidly raised to the process temperature, thereby improving the heating efficiency of the wafer and thus increasing the process capacity of the ion implantation equipment.
[0072] In this embodiment, the second heating device 120 disposed in the transmission cavity 113 includes: a second carrier plate disposed in the transmission cavity 113, the second carrier plate including an electrostatic chuck 160 and a heating element 130 embedded inside the electrostatic chuck 160.
[0073] Specifically, the electrostatic chuck 160 is used to carry and hold the wafer, ensuring that the wafer remains stable during heating and implantation.
[0074] As an example, heating element 130 includes a heating wire or a fluid heating element.
[0075] In this embodiment, the electrostatic chuck 160 of the second carrier disk includes: an electrostatic electrode 131, which is embedded in the electrostatic chuck 160 and close to the upper surface of the electrostatic chuck 160, and the heating element 130 is located below the electrostatic electrode 131.
[0076] Specifically, the heating element 130 is located below the electrostatic electrode 131, which can form a vertical layered structure of the electrostatic adsorption layer formed by the electrostatic electrode 131 and the heating layer formed by the heating element 130, thus avoiding mutual interference.
[0077] It should be noted that the electrostatic electrode 131, which is embedded in the electrostatic chuck 160 and close to the upper surface of the electrostatic chuck 160, can improve the electrostatic adsorption force generated by the electrostatic electrode 131, thereby improving the adsorption stability of the wafer.
[0078] In other embodiments, there may be only a first heating device or only a second heating device.
[0079] In this embodiment, the first heating device further includes a back-gas heating structure, which is used to transfer the heat emitted by the heating body 130 to the wafer; and / or, the second heating device 120 further includes a back-gas heating structure, which is used to transfer the heat emitted by the heating body 130 to the wafer.
[0080] Specifically, by setting up a back-gas heating structure, the heat emitted by the heating element 130 can be transferred to the wafer through gas thermal convection. Furthermore, under the movement of gas thermal convection, a thermal convection effect can be generated, so that the wafer is heated evenly and the wafer temperature is highly consistent.
[0081] It should be noted that by transferring the heat emitted by the heating element 130 to the wafer through gas thermal convection, the thermal contact area of the wafer is increased, which can significantly improve the heating efficiency of the wafer. Thus, the production capacity of the ion implantation equipment can be increased without increasing the heating power of the heating element 130.
[0082] In this embodiment, the back-gas heating structure includes: a heating groove 181 located on the surface of the electrostatic chuck 160; a back-gas pipe 172 penetrating the electrostatic chuck 160, with one end of the back-gas pipe 172 communicating with the heating groove 181; a gas source 162 communicating with the other end of the back-gas pipe 172 and used to inject gas into the heating groove through the back-gas pipe 172; a suction branch 163 communicating with the back-gas pipe 172; and a suction pump 161 communicating with the other end of the suction branch 163, with the suction pump 161 controlling the gas pressure in the heating groove 181 through the suction branch 163.
[0083] Specifically, a closed-loop gas control system is formed by the gas source 162, the back gas pipeline 172, the heating trench 181 and the air pump 161. The gas pressure in the trench is dynamically adjusted by the air extraction branch 163 to reduce the risk of gaps or detachment between the wafer and the electrostatic chuck 160.
[0084] As an example, the heating groove 181 includes a plurality of heating sub-grooves 180 extending along a first direction and a second direction and arranged in parallel at intervals, and the heating sub-grooves 180 extending along the first direction intersect with the heating sub-grooves 180 extending along the second direction.
[0085] Specifically, by arranging multiple heating sub-grooves 180° intersecting each other, heat can be evenly distributed, improving the temperature uniformity of the wafer.
[0086] In other embodiments, the heating groove 181 may also include a plurality of heating sub-grooves 180 surrounding the center of the surface of the electrostatic chuck 160.
[0087] It should be noted that by arranging multiple heating sub-grooves 180 in a concentric circle, heat can be evenly distributed, improving the temperature uniformity of the wafer.
[0088] In this embodiment, the back gas pipeline 172 includes: a plurality of back gas branch pipelines 170, one end of which is connected to a heating trench 181 at a different location; and a back gas main pipeline 171, one end of which is connected to the other end of the plurality of back gas branch pipelines 170, and the other end of which is connected to the gas source 162.
[0089] Specifically, gas is injected into the heating trench 181 through the back gas pipe 172. The heat of the heating element 130 is evenly transferred to the bottom of the wafer by utilizing the thermal convection effect of the gas. The gas fills the trench between the wafer and the electrostatic chuck 160 to form a uniform heat conduction layer, ensuring that the temperature is consistent throughout the wafer.
[0090] As an example, the gas source 162 may contain an inert gas.
[0091] Specifically, inert gas is selected as the heat transfer medium because inert gas has low activity, which can avoid the risk of oxidation on the surface of the wafer at high temperatures.
[0092] It should be noted that the depth of the heating groove 181 should not be too large. If the depth of the heating groove 181 is too large, it may affect the mechanical strength of the electrostatic chuck 160.
[0093] In this embodiment, both the first heating device and the second heating device 120 are provided with a back-gas heating structure.
[0094] In other embodiments, only the first heating device may be provided with a back-gas heating structure, while the second heating device 120 may not be provided with a back-gas heating structure.
[0095] In some other embodiments, only the second heating device 120 may be provided with a back-gas heating structure, while the first heating device may not be provided with a back-gas heating structure.
[0096] Although the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.
Claims
1. An ion implantation device, characterized in that, include: Optical path assembly, wherein the optical path assembly comprises, in sequence along the optical path direction: An ion source is used to generate plasma. Extraction electrodes are used to extract plasma from the ion source to form an ion beam. A mass analyzer is used to screen target ions in the ion beam; A beam uniformity adjustment device is used to adjust the uniformity of the ion beam. An energy filtration device is used to filter target ions that meet a predetermined energy level. An electron gun is used to supply electrons to the ion beam; The process cavity includes: Scanning robot; A first carrier disk is disposed on the scanning robot. The first carrier disk is used to carry the wafer. The scanning robot is used to move the first carrier disk so that the target ions are implanted into the entire wafer. An ion collection device for collecting target ions that have not been implanted into the wafer; A wafer transport assembly, wherein the wafer transport assembly comprises, in sequence, the following components during the transport of the wafer: The device front-end module is used to receive external wafers to be ion implanted and to transmit ion-implanted wafers to the outside of the ion implantation device. A vacuum loading device is installed between the transfer chamber and the front-end module of the equipment, which is used to freely switch between atmospheric and vacuum environments; The transmission cavity includes: Alignment platform, used to align the circumferential position of the wafer to be implanted with ions; A transfer robot is used to transfer the wafer between a vacuum loading device, a transfer cavity, and a process cavity; Wherein, a first heating device is provided on the first carrier disk; and / or, a second heating device is provided in the transfer cavity, the first heating device and the second heating device being used to heat the wafer.
2. The ion implantation device as described in claim 1, characterized in that, The first carrier disk is provided with a first heating device, including: the first carrier disk includes an electrostatic chuck and a heating element embedded inside the electrostatic chuck.
3. The ion implantation device as described in claim 2, characterized in that, The second heating device provided in the transmission cavity includes: a second carrier plate provided in the transmission cavity, the second carrier plate including an electrostatic chuck and a heating element embedded inside the electrostatic chuck.
4. The ion implantation device as described in claim 3, characterized in that, The first heating device further includes: a back-gas heating structure, the back-gas heating structure being used to transfer heat emitted by the heating element to the wafer; and / or, The second heating device further includes a back-gas heating structure, which is used to transfer the heat emitted by the heating element to the wafer.
5. The ion implantation apparatus as described in claim 4, characterized in that, The back gas heating structure includes: a heating groove located on the surface of the electrostatic chuck; A back air pipe passes through the electrostatic chuck, and one end of the back air pipe is connected to the heating groove; A gas source is connected to the other end of the back gas pipeline and is used to inject gas into the heating groove through the back gas pipeline; One end of the exhaust branch is connected to the back air pipeline; An air pump is connected to the other end of the air extraction branch, and the air pump controls the gas pressure in the heating trench through the air extraction branch.
6. The ion implantation apparatus as described in claim 5, characterized in that, The heating groove includes a plurality of heating sub-grooves that extend along a first direction and a second direction and are arranged in parallel at intervals, and the heating sub-grooves extending along the first direction intersect with the heating sub-grooves extending along the second direction. or, The heating groove includes a plurality of heating sub-grooves surrounding the center of the surface of the electrostatic chuck.
7. The ion implantation apparatus as described in claim 5, characterized in that, The back-gas pipeline includes: multiple back-gas branch pipelines, one end of which is connected to a heating trench at a different location; A back gas main pipeline, one end of which is connected to the other end of a plurality of back gas branch pipelines, and the other end of which is connected to the gas source.
8. The ion implantation apparatus as described in claim 5, characterized in that, The gas source includes inert gases.
9. The ion implantation apparatus as described in claim 2 or 3, characterized in that, The heating element includes a heating wire or a fluid heating element.