A power device
By employing a double-layer strained structure in power devices, the contradiction between gate leakage current and dynamic performance is resolved, achieving the effects of reducing leakage current and increasing the concentration and mobility of two-dimensional electron gas.
CN224356567UActive Publication Date: 2026-06-12INNOSCIENCE (SUZHOU) SEMICON CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- INNOSCIENCE (SUZHOU) SEMICON CO LTD
- Filing Date
- 2025-06-20
- Publication Date
- 2026-06-12
AI Technical Summary
⚠Technical Problem
Existing power devices cannot simultaneously meet the requirements of reducing gate leakage current and improving device dynamic performance.
⚗Method used
A dual-strain layer structure is adopted, wherein the thickness of the first strain layer is greater than or the dielectric constant is greater than that of the second strain layer. The first strain layer covers the side and surface of the gate, and the second strain layer covers the drift region. Combined with the spacer layer and passivation structure, the gate is protected and the device stress is increased.
🎯Benefits of technology
It effectively reduces gate leakage current, increases the concentration and mobility of two-dimensional electron gas, and improves the dynamic performance and reliability of the device.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN224356567U_ABST
Abstract
The utility model discloses a kind of power devices, power device includes: gate structure, gate structure includes doped nitride semiconductor layer and gate;Doped nitride semiconductor layer covers partial barrier layer;Gate is located in doped nitride semiconductor layer side away from substrate, and gate covers at least part of doped nitride semiconductor layer;First strain layer covers at least the side surface of gate and the surface of gate away from substrate;Spacer, spacer is located in first strain layer side away from substrate;Spacer covers first strain layer;Second strain layer, second strain layer is located in spacer side away from substrate, and second strain layer covers at least spacer and part of barrier layer surface away from substrate;Wherein, along first direction, the thickness of first strain layer is greater than the thickness of second strain layer, and / or, the dielectric constant of first strain layer is greater than the dielectric constant of second strain layer.The utility model can improve the dynamic performance of device while reducing gate leakage.
Need to check novelty before this filing date? Find Prior Art