Semiconductor device

By introducing a combination of control gate and auxiliary gate structures into the finned TFET, the problems of high threshold voltage and slow switching speed are solved, achieving more efficient current control and improved switching speed.

CN224356568UActive Publication Date: 2026-06-12TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Filing Date
2025-04-16
Publication Date
2026-06-12

AI Technical Summary

⚠Technical Problem

Existing fin transistors suffer from high threshold voltage, low switching speed, and low power efficiency during switching, especially in fin tunnel field-effect transistors (TFETs), where the control of quantum tunneling effect is not effective enough.

⚗Method used

A combination design of a control gate structure and an auxiliary gate structure is adopted. The auxiliary gate structure is placed between the control gate structure and the source/drain region of the finned TFET. By applying voltage, the tunneling distance between the source/drain region and the channel region is reduced, and the quantum tunneling effect is used to improve the switching speed and power efficiency.

🎯Benefits of technology

By reducing the threshold voltage, the switching speed and power efficiency of the finned TFET are improved, the quantum tunneling effect of charge carriers between the source and drain regions is enhanced, and more efficient current control is achieved.

✦ Generated by Eureka AI based on patent content.

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Abstract

A semiconductor device includes a control gate structure and an auxiliary gate structure adjacent to the control gate structure. The auxiliary gate structure is disposed between the control gate structure and a source / drain region of a fin tunnel field effect transistor. When a voltage is applied to the auxiliary gate structure, the auxiliary gate structure causes a valence band of the fin tunnel field effect transistor to rise near a junction between the source / drain region and a channel region in a semiconductor layer beneath the auxiliary gate structure. This reduces a tunnel distance between the source / drain region and the channel region, which allows the control gate structure to use a smaller threshold voltage than without the auxiliary gate structure.
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