Power module package structure

Abstract

The application discloses a power module packaging structure, comprising: a lead frame, the lead frame comprising a plurality of independent base islands; a driving chip and a plurality of power devices, the driving chip comprising a first side and a second side, the driving chip and the plurality of power devices being located on the corresponding base islands of the lead frame; and a plastic package, covering the driving chip, the plurality of power devices and the plurality of base islands of the lead frame, the plastic package comprising a first side and a second side. The first distance between the first side of the driving chip and the first side of the plastic package is smaller than the second distance between the second side of the driving chip and the second side of the plastic package, and part of the plurality of power devices is distributed between the second side of the driving chip and the second side of the plastic package, and the plurality of power devices partially surround the driving chip.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and more specifically, to a power module packaging structure. Background Technology

[0002] With the continuous miniaturization of smart power modules, heat dissipation performance has become an increasingly critical indicator. During use, the chip's junction temperature has a direct and significant impact on the failure rate. Traditional through-hole smart power modules are typically used in high-power applications, requiring large external heatsinks to ensure the junction temperature remains within safe limits. In contrast, surface-mount smart power modules are mostly used in low-power applications and also typically require small heatsinks to control junction temperature. Furthermore, surface-mount modules have an additional heat dissipation path: heat is transferred to the PCB via the pins, and then dissipated to the surrounding environment by the PCB. Therefore, improving the pin heat dissipation performance of surface-mount smart power modules is expected to further reduce the size of external heatsinks, and even allow for safe junction temperature control without the need for external heatsinks. This will help further reduce the cost for end users and is of great significance for practical applications.

[0003] Given the above background, this paper proposes a surface-mount intelligent power module design to enhance pin heat dissipation performance. By widening the pins, the heat flow rate of the pins and the heat dissipation area between the pins and the PCB are increased. Simultaneously, to control the overall size of the surface-mount intelligent power module and avoid increasing the module size due to pin widening, and considering that the power pins leading from the power chip's base island play a primary role in heat dissipation in practical applications, this paper specifically enhances these pins, while leaving other power pins untreated. This approach ensures both module miniaturization and improved heat dissipation capabilities. Utility Model Content

[0004] According to this utility model, a power module packaging structure is proposed, comprising:

[0005] The lead frame comprises multiple independent base islands;

[0006] A driver chip and multiple power devices, the driver chip including a first side and a second side, the driver chip and multiple power devices being located on corresponding base islands of a lead frame; and a molding compound covering the driver chip, multiple power devices and multiple base islands of the lead frame, the molding compound including a first side and a second side.

[0007] The base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the power devices include a first power device, a second power device, and a third power device as upper bridge power devices, and a fourth power device, a fifth power device, and a sixth power device as lower bridge power devices; the driver chip is located on the first base island, the upper bridge power device is located on the second base island, and the lower bridge power devices are located on the third base island, the fourth base island, and the fifth base island, respectively;

[0008] The second base island leads out the positive terminal of the DC power supply. The second terminals of the first power device, the second power device, and the third power device are electrically connected to the positive terminal of the DC power supply. The third base island leads out the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal. The third terminal of the first power device and the second terminal of the fourth power device are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal. The fourth base island leads out the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal. The third terminal of the second power device and the second terminal of the fifth power device are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal. The fifth base island leads out the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal. The third terminal of the third power device and the second terminal of the sixth power device are electrically connected to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal.

[0009] The DC power supply positive terminal, U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal are led out from the plastic package with corresponding pins. The width of the corresponding pins led out from the plastic package is in the range of 0.5mm-3mm.

[0010] Optionally, the width of the corresponding pins leading out from the plastic package for the DC power supply positive terminal, U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal is in the range of 1mm-2mm.

[0011] Optionally, the first distance between the first side of the driver chip and the first side of the molding compound is less than the second distance between the second side of the driver chip and the second side of the molding compound, and a plurality of power devices are distributed between the second side of the driver chip and the second side of the molding compound, with the plurality of power devices partially surrounding the driver chip.

[0012] Optionally, the second, third, fourth, and fifth base islands partially surround the first base island; two of the third, fourth, and fifth base islands are adjacent and located on one side of the second base island, and one of the third, fourth, and fifth base islands is located on the other side of the second base island.

[0013] Optionally, the second base island includes a first part and a second part, the first part of the second base island is located to the left of the first base island, the second part of the second base island is located above and to the upper right of the first base island, the third base island and the fourth base island are located to the upper left of the first base island, and the fifth base island is located to the right of the first base island.

[0014] Optionally, the first power device is located to the left of the driver chip, the second and third power devices are located to the upper right of the driver chip, the fourth and fifth power devices are located to the upper left of the driver chip, and the sixth power device is located to the right of the driver chip.

[0015] Optionally, the first terminal of the first power device, the first terminal of the second power device, the first terminal of the third power device, the first terminal of the fourth power device, the first terminal of the fifth power device, and the first terminal of the sixth power device respectively receive the first drive control signal, the second drive control signal, the third drive control signal, the fourth drive control signal, the fifth drive control signal, and the sixth drive control signal from the drive chip; the third terminal of the fourth power device is electrically connected to the negative terminal of the U-phase DC power supply, the third terminal of the fifth power device is electrically connected to the negative terminal of the V-phase DC power supply, and the third terminal of the sixth power device is electrically connected to the negative terminal of the W-phase DC power supply.

[0016] Optionally, the positive DC power supply terminal includes a first positive DC power supply terminal and a second positive DC power supply terminal, with the first positive DC power supply terminal and the second positive DC power supply terminal being led out from the second side and the first side of the encapsulation body, respectively.

[0017] Optionally, the first DC power supply positive terminal, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, the U-phase DC power supply negative terminal, and the V-phase DC power supply negative terminal are led out from the second side of the plastic package as corresponding pins of the power module package structure; the W-phase DC power supply negative terminal and the second DC power supply positive terminal are led out from the first side of the plastic package as corresponding pins of the power module package structure.

[0018] Optionally, the U-phase upper bridge gate drive floating power supply terminal, the V-phase upper bridge gate drive floating power supply terminal, and the W-phase upper bridge gate drive floating power supply terminal are connected to the driver chip via bonding wires, and are led out from the second side of the plastic package as corresponding pins of the power module package structure.

[0019] Optionally, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the U-phase upper bridge gate drive floating power supply terminal, the U-phase DC power supply negative terminal, the V-phase DC power supply negative terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the V-phase upper bridge gate drive floating power supply terminal, the first DC power supply positive terminal, and the W-phase upper bridge gate drive floating power supply terminal are sequentially led out from the second side of the plastic package as corresponding pins of the power module package structure.

[0020] Optionally, the fault signal output terminal, overcurrent protection signal input terminal, W-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, U-phase lower bridge signal input terminal, common ground terminal, gate drive power supply terminal of driver chip and lower bridge power device, W-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, and U-phase upper bridge signal input terminal are arranged in sequence.

[0021] Optionally, the power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device, the emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device, and the collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each power device.

[0022] Optionally, the molding compound also includes a parallel third side and a fourth side, the third side and the fourth side being perpendicular to the first side, the other end of the second base island and the third base island being connected to the third side of the molding compound, and the other end of the fifth base island being connected to the fourth side of the molding compound.

[0023] Optionally, the fault signal output terminal, overcurrent protection signal input terminal, W-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, U-phase lower bridge signal input terminal, gate drive power supply terminal of the driver chip and lower bridge power device, W-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, and U-phase upper bridge signal input terminal are connected to the driver chip via bonding wires and the corresponding pins are brought out.

[0024] Optionally, the gate and emitter of the transistor are connected to the driver chip via bonding wires.

[0025] Optionally, within the driver chip, a first bootstrap diode is connected between the gate drive power supply terminal of the driver chip and the lower bridge power device and the floating gate drive power supply terminal of the U-phase upper bridge; a second bootstrap diode is connected between the gate drive power supply terminal of the driver chip and the lower bridge power device and the floating gate drive power supply terminal of the V-phase upper bridge; and a third bootstrap diode is connected between the gate drive power supply terminal of the driver chip and the lower bridge power device and the floating gate drive power supply terminal of the W-phase upper bridge. The first bootstrap diode, the second bootstrap diode, and the third bootstrap diode are integrated in the driver chip.

[0026] Optionally, the power module packaging structure is a surface mount package.

[0027] Optionally, the dimensions of the encapsulated body are 15mm to 35mm in length and 7mm to 20mm in width.

[0028] Optionally, the encapsulated body height is 1.5mm to 5mm.

[0029] Optionally, the dimensions of the encapsulated body are 20mm-25mm in length and 10mm-15mm in width.

[0030] Optionally, the encapsulated body height is 2mm to 4mm.

[0031] Optionally, the center distance between the common ground terminal and its adjacent terminals on the left and right sides is 0.9mm-2mm, with an error range of ±0.15mm. The center distance between the fault signal output terminal and the second DC power supply positive terminal, and between the W phase DC negative terminal and the W phase output terminal / W phase upper bridge drive bias voltage ground terminal is 2.0mm-5.0mm, with an error range of ±0.15mm.

[0032] Optionally, the center distance between the output terminal of each phase / the ground terminal of the upper bridge drive bias voltage of each phase and the corresponding upper bridge gate drive floating power supply terminal is 1.0mm-3.0mm, with an error range of ±0.15mm.

[0033] Optionally, the first base island is not on the same horizontal plane as the second, third, fourth, and fifth base islands.

[0034] This paper proposes a surface-mount power module package with enhanced pin heat dissipation performance. By setting different pin widths, the heat flow of the pins and the heat dissipation area between the pins and the PCB are increased, while the overall size of the surface-mount smart power module is controlled. In practical applications, the power pins led out from the power chip base island play the main role in heat dissipation. This paper specifically enhances these pins, while other pins are left untreated, thereby improving heat dissipation capacity while ensuring module miniaturization. Attached Figure Description

[0035] The above and other objects, features and advantages of the present invention will become clearer from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:

[0036] Figure 1 A circuit diagram showing the packaging structure of an embodiment of this utility model is provided.

[0037] Figure 2 This diagram shows the internal structure of the packaging structure according to an embodiment of the present invention. Detailed Implementation

[0038] The present invention will now be described in more detail with reference to the accompanying drawings. For clarity, the various parts in the drawings are not drawn to scale. Furthermore, certain well-known parts may not be shown. Many specific details of the present invention are described below, but as those skilled in the art will understand, the present invention may be implemented without following these specific details.

[0039] This invention can be presented in various forms, some of which will be described below.

[0040] Figure 1 A circuit diagram of an embodiment of the present invention is shown.

[0041] The power module includes a driver chip U1, and first to third IGBTs Q11, Q21 and Q31, and fourth to sixth IGBTs Q12, Q22 and Q32 connected to the driver chip U1.

[0042] IGBT is an abbreviation for Insulated Gate Bipolar Transistor. An IGBT is a three-terminal switching device consisting of a gate, emitter, and collector. It features high efficiency, fast switching, and low conduction losses, and is primarily used for power conversion and control.

[0043] The input terminals INUH, INUL, INVH, INVL, INWH, and INWL of the driver chip U1 receive control signals for the U-phase, V-phase, and W-phase from external circuits. The output terminals HOU, LOU, HOV, LOV, HOW, and LOW are connected to the gates of the corresponding IGBTs to provide drive signals for the U-phase, V-phase, and W-phase. The output terminals HOU and LOU of the driver chip U1 are connected to the gates of the first IGBT Q11 and the fourth IGBT Q12, respectively, to provide the upper and lower bridge drive signals for the U-phase. Similarly, the output terminals HOV and LOV of the driver chip U1 are connected to the gates of the second IGBT Q21 and the fifth IGBT Q22, respectively, to provide the upper and lower bridge drive signals for the V-phase. The output terminals HOW and LOW of the driver chip U1 are connected to the gates of the third IGBT Q31 and the sixth IGBT Q32 to provide the upper and lower bridge drive signals for the W-phase. In addition, the driver chip U1 is also connected to the negative terminals NU, NV, and NW of the multiphase DC power supply.

[0044] Therefore, the three-phase drive signals generated by the driver chip U1 are used to control the conduction state of the first to third IGBTs Q11, Q21 and Q31, and the fourth to sixth IGBTs Q12, Q22 and Q32.

[0045] Furthermore, the driver chip U1 may also include multiple bootstrap diodes internally. A bootstrap diode is connected between each of the power supply terminals VCC (gate drive power supply terminal of the driver chip and lower bridge power device) and VBU, VBV, and VBW (gate drive floating power supply terminals of the upper bridge). The function of the bootstrap diode is to provide a stable floating supply voltage to the driver chip U1 when the upper bridge IGBT is turned on, ensuring reliable driving of the upper bridge IGBT.

[0046] The power module generates three-phase output signals under the control of the driver chip U1: the U-phase output signal, the V-phase output signal, and the W-phase output signal. The phases of the three-phase output signals change periodically with time, and there is a phase difference between them to meet the needs of various motor drive and power conversion applications.

[0047] Figure 2 A schematic diagram of the internal structure of the packaging structure according to an embodiment of the utility model is shown.

[0048] by Figure 2 The package structure shown includes a lead frame, which includes multiple independent base islands; a driver chip and multiple power devices. The driver chip U1 includes a first side and a second side, and the driver chip U1 and the multiple power devices are located on the corresponding base islands of the lead frame.

[0049] In this embodiment, the base island includes a first base island 11, a second base island 12, a third base island 13, a fourth base island 14, and a fifth base island 15; the power devices include a first IGBT Q11, a second IGBT Q21, and a third IGBT Q31 as upper-bridge power devices, and a fourth IGBT Q12, a fifth IGBT Q22, and a sixth IGBT Q32 as lower-bridge IGBTs; the driver chip U1 is located on the first base island 11, the upper-bridge IGBT is located on the second base island 12, and the lower-bridge IGBTs are located on the third base island 13, the fourth base island 14, and the fifth base island 15 respectively; the second base island 12, the third base island 13, the fourth base island 14, and the fifth base island 15 partially surround the first base island 11; two base islands of the third base island 13, the fourth base island 14, and the fifth base island 15 are adjacent and located on one side of the second base island 12, and one base island of the third base island 13, the fourth base island 14, and the fifth base island 15 is located on the other side of the second base island 12.

[0050] In addition, the second base island 12 includes a first part and a second part. The first part of the second base island 12 is located to the left of the first base island 11, and the second part of the second base island 12 is located above and to the upper right of the first base island 11. The third base island 13 and the fourth base island 14 are located to the upper left of the first base island 11, and the fifth base island 15 is located to the right of the first base island 11.

[0051] In this embodiment, the second base island 12 leads out the positive terminal of the DC power supply, and the second terminals of the first IGBT Q11, the second IGBT Q21, and the third IGBT Q31 are electrically connected to the positive terminal of the DC power supply; the third base island 13 leads out the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal (U,VSU), and the third terminal of the first IGBT Q11 and the second terminal of the fourth IGBT Q12 are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU; the fourth base island 14 leads out the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, and the third terminal of the second IGBT Q21 and the second terminal of the fifth IGBT Q22 are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV; the fifth base island 15 leads out the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW, and the third terminal of the third IGBT Q31 and the sixth IGBT... The second terminal of Q32 is electrically connected to the output terminal of phase W / phase upper bridge drive bias voltage ground terminal W,VSW;

[0052] In this embodiment, the corresponding pins of the DC power supply positive terminal, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, and the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW are led out from the plastic package. The width of the corresponding pins of the DC power supply positive terminal, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, and the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW are in the range of 0.5mm-3mm.

[0053] In a more specific embodiment, the width of the corresponding pins led out from the plastic package at the DC power supply positive terminal, U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal W,VSW ranges from 1mm to 2mm.

[0054] In this embodiment, the first distance between the first side of the driver chip U1 and the first side of the molding compound is less than the second distance between the second side of the driver chip U1 and the second side of the molding compound, and a plurality of IGBTs are distributed between the second side of the driver chip U1 and the second side of the molding compound, with the plurality of IGBTs partially surrounding the driver chip U1.

[0055] The first IGBT Q11 is located to the left of the driver chip U1, the second IGBT Q21 and the third IGBT Q31 are located to the upper right of the driver chip U1, the fourth IGBT Q12 and the fifth IGBT Q22 are located to the upper left of the driver chip U1, and the sixth IGBT Q32 is located to the right of the driver chip U1. The first terminals of the first IGBT Q11, the second IGBT Q21, the third IGBT Q31, the fourth IGBT Q12, the fifth IGBT Q22, and the sixth IGBT Q32 respectively receive the first, second, third, fourth, fifth, and sixth drive control signals from the driver chip U1. The third terminal of the fourth IGBT Q12 is electrically connected to the negative terminal NU of the U-phase DC power supply, the third terminal of the fifth IGBT Q22 is electrically connected to the negative terminal NV of the V-phase DC power supply, and the third terminal of the sixth IGBT Q32 is electrically connected to the negative terminal NW of the W-phase DC power supply.

[0056] In this embodiment, the positive DC power supply terminal includes a first positive DC power supply terminal P1 and a second positive DC power supply terminal P2. The first positive DC power supply terminal P1, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, the U-phase DC power supply negative terminal NU, and the V-phase DC power supply negative terminal NV are led out from the second side of the plastic package as corresponding pins of the power module package structure. The W-phase DC power supply negative terminal NW and the second positive DC power supply terminal P2 are led out from the first side of the plastic package as corresponding pins of the power module package structure.

[0057] In addition, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal U,VSU, the U-phase upper bridge gate drive floating power supply terminal VBU, the U-phase DC power supply negative terminal NU, the V-phase DC power supply negative terminal NV, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal V,VSV, the V-phase upper bridge gate drive floating power supply terminal VBV, the first DC power supply positive terminal P1, and the W-phase upper bridge gate drive floating power supply terminal VBW are sequentially led out from the second side of the plastic package as corresponding pins of the power module package structure.

[0058] In addition, the fault signal output terminal VFO, the overcurrent protection signal input terminal CSC, the W-phase lower bridge signal input terminal INWL, the V-phase lower bridge signal input terminal INVL, the U-phase lower bridge signal input terminal INUL, the common ground terminal COM, the power supply terminal VCC for the gate drive of the driver chip and the lower bridge power device, the W-phase upper bridge signal input terminal INWH, the V-phase upper bridge signal input terminal INVH, and the U-phase upper bridge signal input terminal INUH are arranged in sequence.

[0059] In this embodiment, the power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device, the emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device, and the collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each power device.

[0060] The molding compound also includes a parallel third side and a fourth side, which are perpendicular to the first side. The other ends of the second base island 12 and the third base island 13 are connected to the third side of the molding compound, and the other end of the fifth base island 15 is connected to the fourth side of the molding compound.

[0061] In this embodiment, the fault signal output terminal VFO, the overcurrent protection signal input terminal CSC, the W-phase lower bridge signal input terminal INWL, the V-phase lower bridge signal input terminal INVL, the U-phase lower bridge signal input terminal INUL, the gate drive power supply terminal VCC of the driver chip and lower bridge power device, the W-phase upper bridge signal input terminal INWH, the V-phase upper bridge signal input terminal INVH, the U-phase upper bridge signal input terminal INUH, the U-phase upper bridge gate drive floating power supply terminal VBU, the V-phase upper bridge gate drive floating power supply terminal VBV, and the W-phase upper bridge gate drive floating power supply terminal VBW are connected to the driver chip U1 via bonding wires, and are led out from the second side of the plastic package as corresponding pins of the power module package structure.

[0062] In this embodiment, the gate and emitter of the power device are connected to the driver chip U1 via bonding wires. Inside the driver chip U1, a first bootstrap diode is connected between the gate drive power supply terminal VCC of the driver chip and the floating gate drive power supply terminal VBU of the U-phase upper bridge; a second bootstrap diode is connected between the gate drive power supply terminal VCC of the driver chip and the floating gate drive power supply terminal VBV of the V-phase upper bridge; and a third bootstrap diode is connected between the gate drive power supply terminal VCC of the driver chip and the floating gate drive power supply terminal VBW of the W-phase upper bridge. The first, second, and third bootstrap diodes are integrated into the driver chip U1.

[0063] In this embodiment, the packaging type of the packaging structure is surface mount packaging.

[0064] The dimensions of the encapsulated body can be 15mm~35mm in length, 7mm~20mm in width, and 1.5mm~5mm in height. More preferably, the dimensions of the encapsulated body can be 20mm~25mm in length, 10mm~15mm in width, and 2~4mm in height.

[0065] The center distance between the common ground terminal COM and its adjacent low-voltage terminals on the left and right sides is 0.9mm~2.0mm, with an error range of ±0.15mm. The center distance between the fault signal output terminal VFO and the second DC power supply positive terminal P2, and between the W-phase DC negative terminal NW and the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal is 2.0mm-5.0mm, with an error range of ±0.15mm.

[0066] The center distance between the output terminal of each phase / the ground terminal of the upper bridge drive bias voltage of each phase and the corresponding upper bridge gate drive floating power supply terminal is 1.0mm-3.0mm, with an error range of ±0.15mm.

[0067] Furthermore, the first base island 11 is not on the same horizontal plane as the second base island 12, the third base island 13, the fourth base island 14, and the fifth base island 15.

[0068] In this embodiment, the driver chip U1 is positioned adjacent to one side of the molding compound, and multiple IGBT portions surround the driver chip U1 to achieve a uniform distribution of multiple power devices.

[0069] By improving space utilization within the packaging structure, power modules can be miniaturized. Furthermore, the improved heat distribution uniformity among multiple power devices within the packaging structure effectively enhances heat dissipation performance and extends the lifespan of the power module.

[0070] Furthermore, the second base island 12 partially surrounds the first base island 11 of the driver chip U1, improving the efficiency of internal interconnection and also improving heat dissipation performance by increasing the area of ​​the base island.

[0071] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0072] As described above, these embodiments of the present invention do not exhaustively cover all details, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the present invention, thereby enabling those skilled in the art to effectively utilize the present invention and its modifications. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A power module packaging structure, characterized in that, include: A lead frame, the lead frame comprising a plurality of mutually independent base islands; A driver chip and multiple power devices, the driver chip including a first side and a second side, the driver chip and multiple power devices being located on corresponding base islands of the lead frame; and a molding compound covering the driver chip, the multiple power devices and multiple base islands of the lead frame, the molding compound including a first side and a second side; The base island includes a first base island, a second base island, a third base island, a fourth base island, and a fifth base island; the power devices include a first power device, a second power device, and a third power device serving as upper-bridge power devices, and a fourth power device, a fifth power device, and a sixth power device serving as lower-bridge power devices; the driver chip is located on the first base island, the upper-bridge power device is located on the second base island, and the lower-bridge power devices are respectively located on the third base island, the fourth base island, and the fifth base island; The second base island leads out a positive DC power supply terminal, and the second terminals of the first power device, the second power device, and the third power device are electrically connected to the positive DC power supply terminal. The third base island leads out the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, and the third terminal of the first power device and the second terminal of the fourth power device are electrically connected to the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal. The fourth base island leads out the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and the third terminal of the second power device and the second terminal of the fifth power device are electrically connected to the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal; The fifth base island leads out the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, and the third terminal of the third power device and the second terminal of the sixth power device are electrically connected to the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal. The DC power supply positive terminal, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal are led out from the plastic package with corresponding pins. The width of the corresponding pins led out from the plastic package is in the range of 0.5mm-3mm.

2. The power module packaging structure according to claim 1, characterized in that, The width of the corresponding pins leading out from the plastic package for the DC power supply positive terminal, U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, and W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal is in the range of 1mm-2mm.

3. The power module packaging structure according to claim 1, characterized in that, The first distance between the first side of the driver chip and the first side of the molding compound is less than the second distance between the second side of the driver chip and the second side of the molding compound, and some of the plurality of power devices are distributed between the second side of the driver chip and the second side of the molding compound, and the plurality of power devices partially surround the driver chip.

4. The power module packaging structure according to claim 1, characterized in that, The second, third, fourth, and fifth base islands partially surround the first base island; two of the third, fourth, and fifth base islands are adjacent and located on one side of the second base island, and one of the third, fourth, and fifth base islands is located on the other side of the second base island.

5. The power module packaging structure according to claim 1, characterized in that, The second base island includes a first part and a second part. The first part of the second base island is located to the left of the first base island, and the second part of the second base island is located above and to the upper right of the first base island. The third base island and the fourth base island are located to the upper left of the first base island, and the fifth base island is located to the right of the first base island.

6. The power module packaging structure according to claim 1, characterized in that, The first power device is located to the left of the driver chip, the second and third power devices are located to the upper right of the driver chip, the fourth and fifth power devices are located to the upper left of the driver chip, and the sixth power device is located to the right of the driver chip.

7. The power module packaging structure according to claim 1, characterized in that, The first terminal of the first power device, the first terminal of the second power device, the first terminal of the third power device, the first terminal of the fourth power device, the first terminal of the fifth power device, and the first terminal of the sixth power device respectively receive the first drive control signal, the second drive control signal, the third drive control signal, the fourth drive control signal, the fifth drive control signal, and the sixth drive control signal from the drive chip; the third terminal of the fourth power device is electrically connected to the negative terminal of the U-phase DC power supply, the third terminal of the fifth power device is electrically connected to the negative terminal of the V-phase DC power supply, and the third terminal of the sixth power device is electrically connected to the negative terminal of the W-phase DC power supply.

8. The power module packaging structure according to claim 7, characterized in that, The positive DC power supply terminal includes a first positive DC power supply terminal and a second positive DC power supply terminal, which are respectively led out from the second side of the encapsulation body and the first side of the encapsulation body.

9. The power module packaging structure according to claim 8, characterized in that, The first DC power supply positive terminal, the U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the W-phase output terminal / W-phase upper bridge drive bias voltage ground terminal, the U-phase DC power supply negative terminal, and the V-phase DC power supply negative terminal are led out from the second side of the plastic package as corresponding pins of the power module package structure; the W-phase DC power supply negative terminal and the second DC power supply positive terminal are led out from the first side of the plastic package as corresponding pins of the power module package structure.

10. The power module packaging structure according to claim 9, characterized in that, The U-phase upper bridge gate drive floating power supply terminal, the V-phase upper bridge gate drive floating power supply terminal, and the W-phase upper bridge gate drive floating power supply terminal are connected to the driver chip via bonding wires, and are led out from the second side of the plastic package as corresponding pins of the power module package structure.

11. The power module packaging structure according to claim 10, characterized in that, The U-phase output terminal / U-phase upper bridge drive bias voltage ground terminal, the U-phase upper bridge gate drive floating power supply terminal, the U-phase DC power supply negative terminal, the V-phase DC power supply negative terminal, the V-phase output terminal / V-phase upper bridge drive bias voltage ground terminal, the V-phase upper bridge gate drive floating power supply terminal, the first DC power supply positive terminal, and the W-phase upper bridge gate drive floating power supply terminal are sequentially led out from the second side of the plastic package as corresponding pins of the power module package structure.

12. The power module packaging structure according to claim 11, characterized in that, The fault signal output terminal, overcurrent protection signal input terminal, W-phase lower bridge signal input terminal, V-phase lower bridge signal input terminal, U-phase lower bridge signal input terminal, common ground terminal, power supply terminal for the gate drive of the driver chip and lower bridge power device, W-phase upper bridge signal input terminal, V-phase upper bridge signal input terminal, and U-phase upper bridge signal input terminal are arranged in sequence.

13. The power module packaging structure according to claim 1, characterized in that, The power devices are IGBTs and fast recovery diodes. The gate of the IGBT serves as the first terminal of the power device. The emitter of the IGBT is electrically connected to the anode of the fast recovery diode and serves as the third terminal of the power device. The collector of the IGBT is electrically connected to the cathode of the fast recovery diode and serves as the second terminal of the power device. The collector of the IGBT and the cathode of the fast recovery diode are located on the base islands corresponding to each of the power devices.

14. The power module packaging structure according to claim 1, characterized in that, The encapsulation body also includes a parallel third side and a fourth side, the third side and the fourth side being perpendicular to the first side, the other end of the second base island and the third base island being connected to the third side of the encapsulation body, and the other end of the fifth base island being connected to the fourth side of the encapsulation body.

15. The power module packaging structure according to claim 12, characterized in that, The fault signal output terminal, the overcurrent protection signal input terminal, the W-phase lower bridge signal input terminal, the V-phase lower bridge signal input terminal, the U-phase lower bridge signal input terminal, the gate drive power supply terminal of the driver chip and the lower bridge power device, the W-phase upper bridge signal input terminal, the V-phase upper bridge signal input terminal, and the U-phase upper bridge signal input terminal are connected to the driver chip via bonding wires and their corresponding pins are led out.

16. The power module packaging structure according to claim 1, characterized in that, The power device is a transistor, and the gate and emitter of the transistor are connected to the driver chip via bonding wires.

17. The power module packaging structure according to claim 1, characterized in that, Inside the driver chip, a first bootstrap diode is connected between the driver chip and the gate drive power supply terminal of the lower bridge power device and the gate drive floating power supply terminal of the U-phase upper bridge; a second bootstrap diode is connected between the driver chip and the gate drive power supply terminal of the lower bridge power device and the gate drive floating power supply terminal of the V-phase upper bridge; and a third bootstrap diode is connected between the driver chip and the gate drive power supply terminal of the lower bridge power device and the gate drive floating power supply terminal of the W-phase upper bridge. The first bootstrap diode, the second bootstrap diode, and the third bootstrap diode are integrated in the driver chip.

18. The power module packaging structure according to claim 1, characterized in that, The power module packaging structure is a surface mount package.

19. The power module packaging structure according to claim 1, characterized in that, The dimensions of the encapsulated body are 15mm~35mm in length and 7mm~20mm in width.

20. The power module packaging structure according to claim 19, characterized in that, The encapsulated body is 1.5mm to 5mm high.

21. The power module packaging structure according to claim 1, characterized in that, The dimensions of the encapsulated body are 20mm-25mm in length and 10mm-15mm in width.

22. The power module packaging structure according to claim 21, characterized in that, The encapsulated body is 2mm to 4mm high.

23. The power module packaging structure according to claim 12, characterized in that, The center distance between the common ground terminal and the adjacent terminals on the left and right sides is 0.9mm-2mm, with an error range of ±0.15mm. The center distance between the fault signal output terminal and the second DC power supply positive terminal, and between the W phase DC negative terminal and the W phase output terminal / W phase upper bridge drive bias voltage ground terminal is 2.0mm-5.0mm, with an error range of ±0.15mm.

24. The power module packaging structure according to claim 10, characterized in that... The center distance between the output terminal of each phase / the ground terminal of the upper bridge drive bias voltage of each phase and the corresponding upper bridge gate drive floating power supply terminal is 1.0mm-3.0mm, with an error range of ±0.15mm.

25. The power module packaging structure according to claim 1, characterized in that, The first base island is not on the same horizontal plane as the second, third, fourth, and fifth base islands.

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