Ion source

By using a single radio frequency coil to cover the discharge chamber in the ion source and maintaining a constant working gas concentration, the problems of complex ion source structure and high cost are solved, and stable and efficient plasma processing is achieved.

CN224366827UActive Publication Date: 2026-06-16SHENZHEN YUANSU OPTOELECTRONICS TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
SHENZHEN YUANSU OPTOELECTRONICS TECH CO LTD
Filing Date
2025-06-17
Publication Date
2026-06-16

AI Technical Summary

Technical Problem

Existing ion sources have complex structures, high costs, and cumbersome maintenance processes. Furthermore, electromagnetic field coupling interference between multiple radio frequency coils leads to uneven plasma distribution, affecting sample processing quality.

Method used

The design employs a single radio frequency coil, which covers the discharge chamber, ensuring a uniform electromagnetic field, simplifying the structure and reducing costs. At the same time, the gas supply equipment maintains a constant working gas concentration within the discharge space.

Benefits of technology

It improves the working stability of the ion source and the quality of product processing, simplifies the maintenance process, reduces production costs, and avoids processing differences caused by uneven plasma distribution.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to ion source equipment technical field, especially ion source. The ion source includes discharge chamber and radio frequency coil, the discharge chamber has discharge space, the discharge space is suitable for accommodating working gas, the discharge chamber has along the first size of first direction, and has along the second size of second direction perpendicular to first direction, the radio frequency coil interval setting is at the bottom of discharge chamber, the radio frequency coil has along the third size of first direction, and has along the fourth size of second direction, wherein, the third size is not less than the first size, the fourth size is not less than the second size, to make the radio frequency coil cover the discharge chamber. The utility model provides ion source's simple structure, cost is lower, the product's quality of easy maintenance, processing is good.
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Description

Technical Field

[0001] This utility model relates to the field of ion source equipment technology, and in particular to an ion source. Background Technology

[0002] The radio frequency (RF) coil of an inductively coupled radio frequency (ICF) ion source generates an electromagnetic field inside the discharge chamber. Under the influence of this field, accelerated electrons bombard neutral gas, causing ionization and producing plasma. Because the RF coil is located outside the discharge chamber and no cathode filament is required, the plasma density is high, and the cleanliness is excellent, preventing sample contamination. It is widely used in semiconductor etching, thin film deposition, surface cleaning, and post-oxidation.

[0003] Currently, to meet the demands of production line applications and large-area sample applications, and to achieve plasma coverage of large-area samples, multiple radio frequency (RF) coils need to be installed at the bottom of the discharge chamber. This necessitates the simultaneous operation of multiple RF power supplies and other supporting equipment, resulting in very high costs for the ion source, extremely complex structure, and cumbersome maintenance. Furthermore, electromagnetic field coupling exists between multiple RF coils, leading to mutual interference and uneven plasma distribution within the discharge chamber. This uneven plasma distribution directly results in performance differences in different areas of the sample. Utility Model Content

[0004] The main purpose of this invention is to propose an ion source that aims to solve the technical problems of existing ion sources, such as complex structure, high cost, cumbersome maintenance process, and poor product quality.

[0005] To achieve the above objectives, this utility model proposes an ion source, comprising:

[0006] A discharge chamber having a discharge space adapted to contain a working gas, the discharge chamber having a first dimension along a first direction and a second dimension along a second direction perpendicular to the first direction;

[0007] Radio frequency coils are spaced apart at the bottom of the discharge chamber, and the radio frequency coils have a third dimension along the first direction and a fourth dimension along the second direction;

[0008] Wherein, the third dimension is not less than the first dimension, and the fourth dimension is not less than the second dimension, so that the radio frequency coil covers the discharge chamber.

[0009] In some embodiments, the discharge chamber has a cuboid structure, the discharge chamber has a bottom wall, the bottom wall has a first dimension along the first direction and a second dimension along the second direction, and the radio frequency coil is a disc-shaped structure formed by circumferential winding;

[0010] The radio frequency coil is located below the bottom wall.

[0011] In some embodiments, the radio frequency coil and the bottom wall are arranged opposite to each other, and the distance L between the radio frequency coil and the bottom wall satisfies: 1mm≤L≤80mm.

[0012] In some embodiments, the number of turns N of the circumferential winding of the radio frequency coil satisfies: 2 turns ≤ N ≤ 10 turns.

[0013] In some embodiments, the radio frequency coil includes a middle region and an edge region, wherein the winding density of the radio frequency coil in the edge region is greater than the winding density of the radio frequency coil in the middle region.

[0014] In some embodiments, the radio frequency coil is uniformly wound in the circumferential direction.

[0015] In some embodiments, the projection of the radio frequency coil onto the discharge chamber along the direction from the radio frequency coil to the discharge chamber is a rectangular structure.

[0016] In some embodiments, the discharge chamber has a cuboid structure, the discharge chamber has a side peripheral wall, the side peripheral wall has a first dimension along the first direction and a second dimension along the second direction, and the radio frequency coil is a helical structure formed by winding along the axial direction;

[0017] The radio frequency coil is disposed on one side of the side wall.

[0018] In some embodiments, the radio frequency coil and the side peripheral wall are arranged opposite to each other, and the distance L between the radio frequency coil and the side peripheral wall satisfies: 1mm≤L≤80mm.

[0019] In some embodiments, the discharge chamber has a connecting hole, through which a pipe is inserted. One end of the pipe extends into the discharge space, and the other end of the pipe is connected to a gas supply device, which is used to supply the working gas to the discharge space in real time.

[0020] Compared with the prior art, the beneficial effects of this utility model are:

[0021] In this invention, the ion source has a simple overall structure, consisting of only a discharge chamber and a radio frequency (RF) coil. The RF coil receives an input RF current, which generates an electromagnetic field within the discharge space of the discharge chamber. Under the influence of this electromagnetic field, the working gas within the discharge space ionizes to produce plasma, enabling the product to be processed within the discharge space. By using a single RF coil, mutual interference between the electromagnetic fields generated by multiple RF coils can be avoided, thus ensuring the stability of the ion source, improving the quality of product processing, and preventing processing differences in different areas of the product due to uneven plasma distribution. Furthermore, the overall size of the RF coil corresponds to the overall size of the discharge chamber, allowing the RF coil to completely cover the discharge chamber. This ensures a uniform and consistent magnetic field distribution within the discharge chamber, preventing abrupt changes and further improving the processing quality of the product within the discharge chamber.

[0022] In addition, the single radio frequency coil requires only one set of equipment, which can further simplify the overall structure of the ion source, reduce the complexity of the ion source structure, save on the production and manufacturing costs of the ion source, and facilitate the daily maintenance of the ion source. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0024] Figure 1 An axonometric view of the overall structure of an ion source provided in an embodiment of this utility model;

[0025] Figure 2 This is a front view of the overall structure of an ion source provided in an embodiment of the present invention;

[0026] Figure 3 This is a top view of the overall structure of an ion source provided in an embodiment of the present invention;

[0027] Figure 4 This is a schematic diagram of the structure of the discharge chamber in an ion source according to an embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of the structure of the radio frequency coil in an ion source provided in an embodiment of the present invention.

[0029] Explanation of icon numbers:

[0030] 10. Ion source;

[0031] 100. Discharge chamber;

[0032] 110. Discharge space; 120. Bottom wall; 130. Side peripheral wall;

[0033] 200. Radio frequency coil;

[0034] 210. Middle area; 220. Edge area;

[0035] X, first direction;

[0036] Y, the second direction.

[0037] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0038] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0039] It should be noted that if the embodiments of this utility model involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0040] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or," "and / or," or "and / or" throughout the text implies three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0041] The radio frequency (RF) coil of an inductively coupled radio frequency (ICF) ion source generates an electromagnetic field inside the discharge chamber. Under the influence of this field, accelerated electrons bombard neutral gas, causing ionization and producing plasma. Because the RF coil is located outside the discharge chamber and no cathode filament is required, the plasma density is high, and the cleanliness is excellent, preventing sample contamination. It is widely used in semiconductor etching, thin film deposition, surface cleaning, and post-oxidation.

[0042] Currently, to meet the demands of production line applications and large-area sample applications, and to achieve plasma coverage of large-area samples, multiple radio frequency (RF) coils need to be installed at the bottom of the discharge chamber. This necessitates the simultaneous operation of multiple RF power supplies and other supporting equipment, resulting in very high costs for the ion source, extremely complex structure, and cumbersome maintenance. Furthermore, electromagnetic field coupling exists between multiple RF coils, leading to mutual interference and uneven plasma distribution within the discharge chamber. This uneven plasma distribution directly results in performance differences in different areas of the sample.

[0043] Based on this, in order to solve the technical problems of existing ion sources 10, such as complex structure, high cost, cumbersome maintenance process, and poor sample quality, refer to Figures 1 to 5 This invention provides an ion source 10, which includes a discharge chamber 100 and a radio frequency coil 200. The discharge chamber 100 has a discharge space 110 adapted to contain a working gas, within which sample processing can be performed. The discharge chamber 100 has a first dimension along a first direction X and a second dimension along a second direction Y perpendicular to the first direction X. For example, the first direction X can be the length direction of the discharge chamber 100, i.e., the first dimension can be the length of the discharge chamber 100, and the second direction Y can be the width direction of the discharge chamber 100, i.e., the second dimension can be the width of the discharge chamber 100. The radio frequency coil 200 is spaced apart at the bottom of the discharge chamber 100, and the radio frequency coil 200 has a third dimension along the first direction X and a fourth dimension along the second direction Y. For example, the third dimension can be the length of the radio frequency coil 200, and the fourth dimension can be the width of the radio frequency coil 200. The third dimension is not less than the first dimension, and the fourth dimension is not less than the second dimension, so that the radio frequency coil 200 covers the discharge chamber 100.

[0044] Specifically, in this embodiment, the ion source 10 has a simple overall structure, consisting of only a discharge chamber 100 and a radio frequency coil 200. The radio frequency current input to the radio frequency coil 200 generates an electromagnetic field within the discharge space 110 of the discharge chamber 100. Under the influence of this electromagnetic field, the working gas within the discharge space 110 is ionized to generate plasma, allowing the product to be processed within the discharge space 110. By using a single radio frequency coil 200, mutual interference between the electromagnetic fields generated by multiple radio frequency coils 200 can be avoided, thus ensuring the operational stability of the ion source 10, improving the quality of product processing, and preventing processing differences in different areas of the product due to uneven plasma distribution. Furthermore, the overall size of the radio frequency coil 200 corresponds to the overall size of the discharge chamber 100, allowing the radio frequency coil 200 to completely cover the discharge chamber 100. This ensures a uniform and consistent magnetic field distribution within the discharge chamber 100, preventing abrupt changes and further improving the processing quality of the product within the discharge chamber 100.

[0045] In addition, the single radio frequency coil 200 has a single set of supporting equipment, which can further simplify the overall structure of the ion source 10, reduce the structural complexity of the ion source 10, save the production and manufacturing cost of the ion source 10, and facilitate the daily maintenance of the ion source 10.

[0046] In some embodiments, refer to Figures 1 to 5 The discharge chamber 100 has a cuboid structure and a bottom wall 120. The bottom wall 120 has a first dimension along a first direction X and a second dimension along a second direction Y. For example, the first dimension can be the length of the bottom wall 120, and the second dimension can be the width of the bottom wall 120. The radio frequency coil 200 is a disc-shaped structure formed by winding it circumferentially. The radio frequency coil 200 is disposed below the bottom wall 120.

[0047] Specifically, in this embodiment, a specific structure for a discharge chamber 100 and a radio frequency coil 200 is provided. The first dimension of the discharge chamber 100 along the first direction X determines its length, and the second dimension of the discharge chamber 100 along the second direction Y determines its width. Together, they constitute the spatial layout of the discharge chamber 100. Corresponding to the structure and dimensions of the discharge chamber 100, the radio frequency coil 200 is formed by a disc-shaped structure wound circumferentially, which can provide a uniform electromagnetic field environment for the discharge chamber 100, promoting a stable ionization reaction of the working gas in the discharge space 110. By placing the radio frequency coil 200 below the bottom wall 120, the spatial layout of the discharge chamber 100 can be effectively utilized, the electromagnetic field distribution optimized, the plasma ionization efficiency improved, and the processing quality of the product within the discharge chamber 100 increased.

[0048] In some embodiments, refer to Figures 1 to 3The RF coil 200 and the bottom wall 120 are arranged opposite each other; in other words, the RF coil 200 and the bottom wall 120 are arranged parallel to each other. This structure ensures that the distance from each position of the RF coil 200 to the bottom wall 120 is equal, thereby improving the uniformity of the electromagnetic field generated by the RF coil 200 within the discharge chamber 100, ensuring the consistency of the plasma generated within the discharge chamber 100, and increasing the processing quality of the product within the discharge chamber 100.

[0049] Reference Figure 2 The distance L between the RF coil 200 and the bottom wall 120 satisfies: 1mm ≤ L ≤ 80mm. For example, the value of L can be 1mm, 20mm, 30mm, 65mm, 80mm, etc. Specifically, setting the value of L within the aforementioned range serves two purposes. First, it avoids an excessively small distance between the RF coil 200 and the bottom wall 120 (e.g., L values ​​of 0.1mm, 0.3mm, 0.5mm, 0.8mm, etc.), which would hinder the installation and assembly of the RF coil 200 and the discharge chamber 100, increasing the assembly difficulty. Second, it avoids an excessively large distance between the RF coil 200 and the bottom wall 120 (e.g., L values ​​of 100mm, 150mm, 200mm, 300mm, etc.), which would result in a weak electromagnetic field generated by the RF coil 200 within the discharge chamber 100, hindering plasma generation within the discharge chamber 100 and thus preventing low processing efficiency and poor processing quality of the product within the discharge chamber 100.

[0050] In some embodiments, refer to Figure 5 The number of turns N of the RF coil 200 wound circumferentially satisfies: 2 turns ≤ N ≤ 10 turns. For example, N can be 2 turns, 5 turns, 7 turns, 9 turns, 10 turns, etc. It should be noted that, depending on the actual manufacturing process and the specific product, the number of turns of the RF coil 200 can be a full turn or a half turn. When the number of turns of the RF coil 200 is a full turn, N is an integer; when the number of turns of the RF coil 200 is a half turn, N is a decimal.

[0051] Specifically, in this embodiment, the intensity of the electromagnetic field generated by the RF coil 200 in the discharge chamber 100 is related to the number of turns of the RF coil 200. Setting the number of turns of the RF coil 200 within the aforementioned range can, on the one hand, prevent the number of turns of the RF coil 200 from being too small (for example, N is 0.3 turns, 0.5 turns, 1 turn, 1.5 turns, etc.), which would result in a weak electromagnetic field intensity generated by the RF coil 200 in the discharge chamber 100, affecting the processing efficiency and quality of the product in the discharge chamber 100; on the other hand, it can prevent the number of turns of the RF coil 200 from being too large (for example, N is 12 turns, 15 turns, 18 turns, 20 turns, etc.), which would result in a complex structure of the RF coil 200, making it difficult to reduce the processing cost of the RF coil 200 and causing a waste of materials required to produce the RF coil 200.

[0052] In some embodiments, refer to Figure 5 The radio frequency (RF) coil 200 includes a central region 210 and an edge region 220. The winding density of the RF coil 200 in the edge region 220 is greater than the winding density of the RF coil 200 in the central region 210. That is, the number of turns of the RF coil 200 gradually decreases from the edge region 220 to the central region 210. Alternatively, in some embodiments, the RF coil 200 is uniformly wound circumferentially. It is understood that the specific structure of the RF coil 200 is not limited to the above two types. For example, in some embodiments, the winding density of the RF coil 200 in the central region 210 may be greater than the winding density of the RF coil 200 in the edge region 220.

[0053] Specifically, in this embodiment, the specific structural shape of the radio frequency coil 200 can be freely adjusted according to the actual production situation and the type of products being processed, thereby adjusting the uniformity and consistency of the plasma generated in the discharge chamber 100, ensuring the processing quality and efficiency of different products in the discharge chamber 100, improving the adaptability of the ion source 10, and reducing the overall production cost. For example, the ion source 10 can be equipped with radio frequency coils 200 of different models, structures, and sizes; when the type of product being produced changes, the corresponding radio frequency coil 200 can be replaced.

[0054] In some embodiments, refer to Figure 3 Along the direction from the radio frequency coil 200 to the discharge chamber 100, the projection of the radio frequency coil 200 onto the discharge chamber 100 is a rectangular structure. Specifically, in this embodiment, corresponding to the cuboid structure of the discharge chamber 100, the radio frequency coil 200 is a rectangular disk-shaped structure, so that the radio frequency coil 200 can match the structural form of the rectangular discharge chamber 100, thereby increasing the intensity of the electromagnetic field generated by the radio frequency coil 200 within the discharge chamber 100, reducing the production cost of the ion source 10, and facilitating the maintenance of the ion source 10.

[0055] In some embodiments, refer to Figures 1 to 3 The discharge chamber 100 has a cuboid structure and a side peripheral wall 130. The side peripheral wall 130 has a first dimension along a first direction X and a second dimension along a second direction Y. For example, the first direction X can be the length direction of the discharge chamber 100, that is, the first dimension is the length of the side peripheral wall 130, and the second direction Y can be the height direction of the discharge chamber 100, that is, the second dimension is the height of the side peripheral wall 130. The radio frequency coil 200 is a helical structure formed by winding along the axial direction. The radio frequency coil 200 is disposed on one side of the side peripheral wall 130.

[0056] Specifically, in this embodiment, another specific structure for the discharge chamber 100 and the radio frequency coil 200 is provided. The first dimension of the discharge chamber 100 along the first direction X determines its length, and the second dimension of the discharge chamber 100 along the second direction Y determines its height. Together, they constitute the spatial layout of the discharge chamber 100. Corresponding to the structure and dimensions of the discharge chamber 100, the radio frequency coil 200 adopts a spiral structure and is wound axially, which can provide a uniform electromagnetic field environment for the discharge chamber 100, promoting a stable ionization reaction of the working gas in the discharge space 110. By placing the radio frequency coil 200 on one side of the side wall 130, the spatial layout of the discharge chamber 100 can be effectively utilized, adapting to different installation environments of the discharge chamber 100, optimizing the electromagnetic field distribution, improving the ionization efficiency of the plasma, and increasing the processing quality of the product in the discharge chamber 100.

[0057] In some embodiments, the RF coil 200 and the side peripheral wall 130 are arranged opposite to each other; in other words, the RF coil 200 and the side peripheral wall 130 are arranged parallel to each other. This structure ensures that the distance from each position of the RF coil 200 to the side peripheral wall 130 is equal, thereby improving the uniformity of the electromagnetic field generated by the RF coil 200 within the discharge chamber 100, ensuring the consistency of the plasma generated within the discharge chamber 100, and increasing the processing quality of the product within the discharge chamber 100.

[0058] The distance L between the RF coil 200 and the side peripheral wall 130 satisfies: 1mm ≤ L ≤ 80mm. For example, the value of L can be 1mm, 20mm, 30mm, 65mm, 80mm, etc. Specifically, setting the value of L within the aforementioned range serves two purposes. First, it avoids the distance between the RF coil 200 and the side wall 130 being too small (e.g., L values ​​of 0.1mm, 0.3mm, 0.5mm, 0.8mm, etc.), which would hinder the installation and assembly of the RF coil 200 and the discharge chamber 100, increasing the assembly difficulty. Second, it avoids the distance between the RF coil 200 and the side wall 130 being too large (e.g., L values ​​of 100mm, 150mm, 200mm, 300mm, etc.), which would result in a weak electromagnetic field generated by the RF coil 200 within the discharge chamber 100, hindering plasma generation within the discharge chamber 100 and thus preventing low processing efficiency and poor processing quality of the product within the discharge chamber 100.

[0059] In some embodiments, the discharge chamber 100 has a connecting hole, through which a pipe is inserted. One end of the pipe extends into the discharge space 110, and the other end of the pipe is connected to a gas supply device, which is used to supply working gas to the discharge space 110 in real time.

[0060] Specifically, in this embodiment, as the ion source 10 processes the product continuously, the working gas in the discharge space 110 is continuously ionized to generate plasma, that is, the working gas in the discharge space 110 is continuously consumed. In order to ensure that the product is continuously processed in the discharge chamber 100, the gas supply equipment continuously supplies the required working gas to the discharge space 110 through pipelines, so that the concentration of the working gas in the discharge space 110 remains constant, thereby improving the stability of the discharge environment and increasing the processing quality and efficiency of the product in the discharge chamber 100.

[0061] In some embodiments, the gas supply equipment is equipped with a valve at the pipe connection point. The flow rate of working gas supplied to the discharge chamber 100 can be controlled by adjusting the opening and closing of the valve. For example, when working gas needs to be supplied to the discharge chamber 100, the valve can be fully opened to increase the supply efficiency. When it is necessary to slow down the supply of working gas to the discharge chamber 100, the valve can be slightly tightened to reduce the opening degree and decrease the supply efficiency. When it is not necessary to supply working gas to the discharge chamber 100, the valve can be completely closed to prevent leakage of working gas from the gas supply equipment. Using the above adjustment method, the concentration of working gas in the discharge chamber 100 can be maintained at a constant level.

[0062] In some embodiments, a seal may be provided at the connection between the pipeline and the discharge chamber 100 and the gas supply equipment, such as a sealing gasket, to ensure the sealing performance when the working gas is transported through the pipeline.

[0063] It should be noted that other aspects of the ion source 10 disclosed in this utility model can be found in the prior art, and will not be repeated here.

[0064] The above are merely preferred embodiments of this utility model and do not limit the patent scope of this utility model. Any equivalent structural transformations made based on the inventive concept of this utility model and the contents of this utility model specification and drawings, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this utility model.

Claims

1. An ion source, characterized in that, include: A discharge chamber having a discharge space adapted to contain a working gas, the discharge chamber having a first dimension along a first direction and a second dimension along a second direction perpendicular to the first direction; Radio frequency coils are spaced apart at the bottom of the discharge chamber, and the radio frequency coils have a third dimension along the first direction and a fourth dimension along the second direction; Wherein, the third dimension is not less than the first dimension, and the fourth dimension is not less than the second dimension, so that the radio frequency coil covers the discharge chamber.

2. The ion source according to claim 1, characterized in that, The discharge chamber has a cuboid structure and a bottom wall. The bottom wall has a first dimension along the first direction and a second dimension along the second direction. The radio frequency coil is a disc-shaped structure formed by winding it circumferentially. The radio frequency coil is located below the bottom wall.

3. The ion source according to claim 2, characterized in that, The radio frequency coil and the bottom wall are arranged opposite to each other, and the distance L between the radio frequency coil and the bottom wall satisfies: 1mm≤L≤80mm.

4. The ion source according to claim 2, characterized in that, The number of turns N of the radio frequency coil wound circumferentially satisfies: 2 turns ≤ N ≤ 10 turns.

5. The ion source according to claim 2, characterized in that, The radio frequency coil includes a middle region and an edge region, and the winding density of the radio frequency coil in the edge region is greater than the winding density of the radio frequency coil in the middle region.

6. The ion source according to claim 2, characterized in that, The radio frequency coil is uniformly wound around the circumference.

7. The ion source according to claim 2, characterized in that, Along the direction from the radio frequency coil to the discharge chamber, the projection of the radio frequency coil onto the discharge chamber is a rectangular structure.

8. The ion source according to claim 1, characterized in that, The discharge chamber has a cuboid structure and a side wall. The side wall has a first dimension along the first direction and a second dimension along the second direction. The radio frequency coil is a spiral structure formed by winding along the axial direction. The radio frequency coil is disposed on one side of the side wall.

9. The ion source according to claim 8, characterized in that, The radio frequency coil and the side peripheral wall are arranged opposite to each other, and the distance L between the radio frequency coil and the side peripheral wall satisfies: 1mm≤L≤80mm.

10. The ion source according to claim 1, characterized in that, The discharge chamber has a connecting hole through which a pipe passes. One end of the pipe extends into the discharge space, and the other end of the pipe is connected to a gas supply device, which is used to supply the working gas to the discharge space in real time.