A novel high-efficiency bc battery metallization pattern
By setting N-type and P-type mark points with a specific distribution at the four corners of the BC cell silicon wafer, the problems of printing accuracy and short circuit risk caused by the complex patterning on the back of the BC cell were solved, and efficient and accurate metallization pattern printing was achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- JIANGSU RUNERGY YUEDA PHOTOVOLTAIC TECHNOLOGY CO LTD
- Filing Date
- 2025-02-21
- Publication Date
- 2026-06-16
AI Technical Summary
The back of the BC battery has a complex graphic design, requiring high printing accuracy and posing a high risk of short circuit. Furthermore, the design of the MARK point is limited, affecting the accurate alignment of the printing press.
Four MARK point areas are designed, with the four MARK points equidistantly distributed at the four corners of the silicon wafer. The N-area and P-area are respectively equipped with N-type and P-type MARK points with specific cross-shaped patterns. The N-type and P-type MARK points are kept at a distance from the GAP area. The laser MARK points are used for auxiliary calibration to ensure that the camera is within the capture range.
It achieves efficient printing of metallized patterns for BC batteries, avoids limitations on the position and shape of MARK points, ensures accurate alignment and precision of the printing press, and reduces the risk of short circuits.
Smart Images
Figure CN224368230U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solar cell manufacturing, and in particular to a novel high-efficiency BC cell metallization pattern. Background Technology
[0002] In the manufacturing process of crystalline silicon solar cells, screen printing is widely used as a metallization process due to its mature technology and ease of operation. During screen printing, the cell needs to provide mark points to ensure accurate printing position on the machine. BC cells, with both the emitter and collector located on the back, offer an aesthetically pleasing design and significant efficiency advantages due to the unobstructed front side, gradually becoming a popular technology in the market. However, having both the emitter and collector on the back introduces challenges: more complex back-side patterning compared to double-sided structures, higher requirements for printing accuracy, and a higher risk of short circuits.
[0003] Traditional printing presses require clearly identifiable mark points before and after printing to quickly complete printing alignment. As a result, the design requirement that the mark points after printing must be clearly identifiable without causing short circuits has forced metallized graphics to abandon the previous mark point design. Utility Model Content
[0004] The purpose of this invention is to provide a novel high-efficiency BC battery metallization pattern to solve the problems in the prior art. The specific technical solution is as follows:
[0005] A novel high-efficiency BC battery metallization pattern includes four MARK point regions, which are equidistantly distributed at the four corners of a silicon wafer. The MARK point regions include N-regions and P-regions. The N-type fine gate extension on the N-region intersects with the initial fine gate on the silicon wafer to form a specific pattern N-type MARK point, and the P-type fine gate extension on the P-region intersects with the initial fine gate on the silicon wafer to form a specific pattern P-type MARK point.
[0006] Furthermore, both the N-type MARK point and the P-type MARK point of the specific pattern are cross-shaped.
[0007] Furthermore, all of the multiple N-type fine gates are connected to the N-type main gate, which is located within the N region, and all of the multiple P-type fine gates are connected to the P-type main gate, which is located within the P region.
[0008] Furthermore, a GAP area is provided between the front end of the N-type fine gate extension portion and the P-type main gate, and a GAP area is provided between the front end of the P-type fine gate extension portion and the N-type main gate.
[0009] Furthermore, both the N-type MARK point and the P-type MARK point maintain a distance of more than 50 μm from the GAP area.
[0010] Furthermore, a laser mark point is provided between the N region and the P region.
[0011] Furthermore, the N-type fine grid extension portion, the P-type fine grid extension portion, the N-type MARK point, the P-type MARK point, and the laser MARK point are all within the camera's field of view.
[0012] Furthermore, the N-type MARK points and the P-type MARK points are not on the same vertical line.
[0013] The advantages of this utility model are:
[0014] By setting N-type and P-type MARK points as screen calibration MARK points, the normal operation of the printing press screen calibration is ensured, and the influence of excessive restrictions on the position and shape of MARK points under the complex graphic design of BC batteries is effectively avoided. This improves the problem that when designing BC graphics, MARK points need to be designed in the opposite polarity region, resulting in an excessively large composite after sintering. Attached Figure Description
[0015] Figure 1 This is a schematic diagram of the MARK point location of this utility model;
[0016] Figure 2 This is a schematic diagram of the MARK point design of this utility model;
[0017] Explanation of markings in the diagram:
[0018] Silicon wafer 1; MARK area 2; N region 3; N-type main gate 4; N-type fine gate 5; GAP area 6; P region 7; P-type main gate 8; P-type fine gate 9; Laser MARK point 10; N-type MARK point 11; P-type MARK point 12. Detailed Implementation
[0019] The technical solution of this utility model will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.
[0020] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0021] Example 1
[0022] like Figures 1-2 As shown, a novel high-efficiency BC battery metallization pattern includes four MARK point regions 2, which are equidistantly distributed at the four corners of a silicon wafer 1. The MARK point regions 2 include N-region 3 and P-region 7. The extended portion of the N-type fine gate 5 on the N-region 3 intersects with the initial fine gate on the silicon wafer 1 to form a specific pattern N-type MARK point 11. The extended portion of the P-type fine gate 9 on the P-region 7 intersects with the initial fine gate on the silicon wafer 1 to form a specific pattern P-type MARK point 12.
[0023] The working principle of the above technical solution is as follows: By setting N-type MARK point 11 and P-type MARK point 12 as screen calibration MARK points, the normal operation of the screen calibration of the printing press is ensured, and the influence of the limited position and shape of MARK points under the complex graphic design of BC battery is effectively avoided. This improves the problem that when designing BC graphic design, MARK points need to be designed in the opposite polarity region, resulting in a larger composite after sintering.
[0024] Example 2
[0025] like Figures 1-2 As shown, the N-type MARK point 11 and the P-type MARK point 12 of the specific pattern are cross-shaped patterns;
[0026] The working principle of the above technical solution: the cross shape facilitates the camera's focus and ensures the accuracy of the printing position on the machine. Circular, rhomboid, and rectangular shapes can also be used.
[0027] Example 3
[0028] like Figures 1-2 As shown, the multiple N-type fine grids 5 are all connected to the N-type main grid 4, the N-type main grid 4 is located in the N region 3, and the multiple P-type fine grids 9 are all connected to the P-type main grid 8, the P-type main grid 8 is located in the P region 7;
[0029] A GAP area 6 is provided between the front end of the extended portion of the N-type fine grid 5 and the P-type main grid 8, and a GAP area 6 is provided between the front end of the extended portion of the P-type fine grid 9 and the N-type main grid 4;
[0030] Both the N-type MARK point 11 and the P-type MARK point 12 maintain a distance of more than 50 μm from the GAP area 6;
[0031] The working principle of the above technical solution is as follows: both the N-type MARK point 11 and the P-type MARK point 12 maintain a distance of more than 50um from the GAP area 6, effectively avoiding the risk of short circuit.
[0032] Example 4
[0033] like Figures 1-2 As shown, a laser mark point 10 is provided between N region 3 and P region 7;
[0034] The extended portion of the N-type fine grid 5, the extended portion of the P-type fine grid 9, the N-type MARK point 11, the P-type MARK point 12, and the laser MARK point 10 are all within the camera's field of view.
[0035] The working principle of the above technical solution is to facilitate camera positioning, ensure accurate printing position, and guarantee printing precision.
[0036] Example 5
[0037] like Figures 1-2 As shown, the N-type MARK point 11 and the P-type MARK point 12 are not on the same vertical line;
[0038] The working principle of the above technical solution is as follows: N-type MARK point 11 and P-type MARK point 12 are not on the same vertical line, that is, N-type MARK point 11 and P-type MARK point 12 are not completely aligned vertically, so as to reduce the risk of short circuit.
[0039] It is understood that this utility model has been described through some embodiments, and those skilled in the art will recognize that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of this utility model. Furthermore, under the teachings of this utility model, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the protection scope of this utility model.
Claims
1. A novel high-efficiency BC battery metallization pattern, characterized in that, It includes four MARK point regions (2), which are equidistantly distributed at the four corners of the silicon wafer (1). The MARK point regions (2) include N region (3) and P region (7). The extension of the N-type fine gate (5) on the N region (3) intersects with the initial fine gate on the silicon wafer (1) to form a specific pattern N-type MARK point (11). The extension of the P-type fine gate (9) on the P region (7) intersects with the initial fine gate on the silicon wafer (1) to form a specific pattern P-type MARK point (12).
2. The novel high-efficiency BC battery metallization pattern according to claim 1, characterized in that, The N-type MARK point (11) and the P-type MARK point (12) of the specific pattern are both cross-shaped patterns.
3. The novel high-efficiency BC battery metallization pattern according to claim 1, characterized in that, Multiple N-type fine grids (5) are connected to N-type main grids (4), which are located in the N region (3). Multiple P-type fine grids (9) are connected to P-type main grids (8), which are located in the P region (7).
4. The novel high-efficiency BC battery metallization pattern according to claim 3, characterized in that, A GAP area (6) is provided between the front end of the extension portion of the N-type fine grid (5) and the P-type main grid (8), and a GAP area (6) is provided between the front end of the extension portion of the P-type fine grid (9) and the N-type main grid (4).
5. The novel high-efficiency BC battery metallization pattern according to claim 3, characterized in that, Both the N-type MARK point (11) and the P-type MARK point (12) maintain a distance of more than 50 μm from the GAP area (6).
6. The novel high-efficiency BC battery metallization pattern according to claim 5, characterized in that, A laser MARK point (10) is provided between the N region (3) and the P region (7).
7. The novel high-efficiency BC battery metallization pattern according to claim 6, characterized in that, The extended portion of the N-type fine grid (5), the extended portion of the P-type fine grid (9), the N-type MARK point (11), the P-type MARK point (12), and the laser MARK point (10) are all within the field of view of the camera.
8. The novel high-efficiency BC battery metallization pattern according to claim 7, characterized in that, The N-type MARK point (11) and the P-type MARK point (12) are not on the same vertical line.