Optical sensor and electronic device

Abstract

The utility model discloses an optical sensor and electronic equipment, optical sensor includes integrated chip, light transmission layer and light uniformity structure, and integrated chip has integrated first optical sensing module, or first optical sensing module and processing module, or first optical sensing module and second optical sensing module, or first optical sensing module, second optical sensing module and processing module, light transmission layer sets up the top of integrated chip, and the vertical projection of light transmission layer covers the effective photosensitive area of first optical sensing module at least, light uniformity structure sets up the top of light transmission layer or sets up between light transmission layer and integrated chip, and the vertical projection of light uniformity structure covers the effective photosensitive area of first optical sensing module at least. Electronic equipment includes above -mentioned optical sensor. The utility model enlarged the effective field of view angle angle of first optical sensing module top, improved the application performance of optical sensor, realized the minimization of optical sensor area and overall miniaturization design.

Description

Technical Field

[0001] This utility model relates to the field of sensor technology, and more specifically, to an optical sensor and electronic device. Background Technology

[0002] With the development of high-end consumer electronics, the demand for installing optical sensors or integrating multiple optical sensors under the screens of electronic devices is becoming increasingly strong. In natural environments, light typically follows a Lambertian distribution, but after passing through the screen of an electronic device, the screen attenuates light at large angles. Optical sensors primarily detect light above the optical sensing chip; the attenuation of large-angle light by the screen reduces the effective angle of light received by the optical sensing chip, thus degrading the performance of the optical sensor.

[0003] Moreover, when multiple optical sensors are integrated under the screen, multiple optical sensor chips are usually placed on the substrate, resulting in a large area of ​​the entire packaging structure, which is not conducive to the development of electronic devices towards miniaturization and thinness. Utility Model Content

[0004] To address the shortcomings of existing technologies, this invention innovatively provides an optical sensor and electronic device. By setting a light-uniforming structure above the effective photosensitive area of ​​the first optical sensing module, the effective field of view angle above the first optical sensing module is expanded, resulting in a larger angle of effective light received by the effective photosensitive area of ​​the first optical sensing module, thereby improving the application performance of the optical sensor. The integrated chip integrates multiple functional modules, and the length and width of the optical sensor are approximately equal to the length and width of the integrated chip, minimizing the area of ​​the optical sensor. The light-uniforming structure is set above the light-transmitting layer or between the light-transmitting layer and the integrated chip, without expanding the length and width of the optical sensor. The height of the light-uniforming structure is also very small, thus enabling the miniaturization design of the optical sensor.

[0005] To achieve the aforementioned technical objectives, the first aspect of this utility model discloses an optical sensor, comprising an integrated chip, a light-transmitting layer, and a light-uniforming structure.

[0006] The integrated chip integrates a first optical sensing module, or a first optical sensing module and a processing module, or a first optical sensing module and a second optical sensing module, or a first optical sensing module, a second optical sensing module and a processing module.

[0007] The light-transmitting layer is disposed above the integrated chip, and the vertical projection of the light-transmitting layer at least covers the effective photosensitive area of ​​the first optical sensing module.

[0008] The light-uniforming structure is disposed above the light-transmitting layer or between the light-transmitting layer and the integrated chip, and the vertical projection of the light-uniforming structure at least covers the effective photosensitive area of ​​the first optical sensing module.

[0009] Furthermore, the integrated chip is provided with a through-silicon via (TSV) structure, which is used to bring the pads on the upper surface of the integrated chip to the underside of the integrated chip; the optical tactile sensor also includes a solder ball array electrically connected to an external circuit, the solder ball array being located below the integrated chip and electrically connected to the TSV structure, thereby electrically connecting the integrated chip to the external circuit.

[0010] Furthermore, the lower surface of the integrated chip is provided with a redistribution layer, and the solder ball array is electrically connected to the through-silicon via structure through the redistribution layer.

[0011] Furthermore, the integrated chip is a wafer-level packaged chip.

[0012] Furthermore, the light-uniforming structure has a flat upper surface and multiple first protrusions on the lower surface. The light-uniforming structure is disposed between the light-transmitting layer and the integrated chip. A light-transmitting adhesive layer is disposed below the light-uniforming structure. The refractive index of the light-transmitting adhesive layer is less than that of the light-uniforming structure. The light-uniforming structure is bonded to the integrated chip through the light-transmitting adhesive layer.

[0013] Furthermore, the refractive index difference between the light-uniforming structure and the light-transmitting adhesive layer is greater than 0.25.

[0014] Furthermore, the refractive index difference between the light-uniforming structure and the light-transmitting adhesive layer is greater than 0.4.

[0015] Furthermore, the light-uniforming structure has a flat upper surface and multiple first protrusions on the lower surface. The light-uniforming structure is disposed between the light-transmitting layer and the integrated chip. A dam is provided around the lower part of the light-uniforming structure. The dam is attached to the integrated chip so that an air gap is formed between the light-uniforming structure and the integrated chip. The vertical projection of the air gap at least covers the effective photosensitive area of ​​the first optical sensing module.

[0016] Furthermore, it also includes a first filter layer, the vertical projection of which at least covers the effective light-sensitive area of ​​the first optical sensing module, the first filter layer being disposed on the light-transmitting layer or between the light-transmitting layer and the light-uniforming structure.

[0017] Furthermore, the light-uniforming structure has a flat first surface and a second surface with multiple second protrusions. A leveling layer is attached to the second surface of the light-uniforming structure. The first surface of the leveling layer has multiple third protrusions, which fill the gaps between the second protrusions on the second surface of the light-uniforming structure. The second surface of the leveling layer is a flat plane. The first and second surfaces are arranged opposite to each other. The refractive index of the leveling layer is less than the refractive index of the light-uniforming structure.

[0018] When the light-diffusing structure is disposed above the light-transmitting layer, one of the light-diffusing structure and the leveling layer is disposed on top of the other.

[0019] When the light-uniforming structure is disposed between the light-transmitting layer and the integrated chip, the leveling layer is disposed below the light-uniforming structure.

[0020] Furthermore, the refractive index difference between the uniform light structure and the leveling layer is greater than 0.25.

[0021] Furthermore, the refractive index difference between the uniform light structure and the leveling layer is greater than 0.4.

[0022] Furthermore, it also includes a second filter layer, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module.

[0023] When the light-uniforming structure is disposed above the light-transmitting layer, the second light-filtering layer is disposed above the stacked light-uniforming structure and the leveling layer, or between the light-transmitting layer and the stacked light-uniforming structure and the leveling layer, or between the light-transmitting layer and the integrated chip;

[0024] When the light-uniforming structure is disposed between the light-transmitting layer and the integrated chip, the second light-filtering layer is disposed on the light-transmitting layer or between the light-transmitting layer and the light-uniforming structure.

[0025] Furthermore, the light-uniforming structure has a flat lower surface and multiple fourth protrusions on the upper surface, and the light-uniforming structure is disposed on the light-transmitting layer.

[0026] Furthermore, it also includes a third filter layer, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module, and the third filter layer is disposed between the light-diffusing structure and the light-transmitting layer, or between the light-transmitting layer and the integrated chip.

[0027] Furthermore, the light-uniforming structure includes at least one light-concentrating unit and at least one light-blocking unit. The light-uniforming structure is disposed between the light-transmitting layer and the integrated chip. At least one light-blocking unit is disposed below each light-concentrating unit. The light-blocking unit corresponding to the light-concentrating unit is located between the light-concentrating unit and the effective photosensitive area of ​​the first optical sensing module. The at least one light-concentrating unit at least covers the effective photosensitive area of ​​the first optical sensing module. The light-blocking unit is used to block the concentrated light from reaching the effective photosensitive area of ​​the first optical sensing module after the first incident light in the incident light is concentrated by the light-concentrating unit corresponding to the light-blocking unit. The angle between the first incident light and the normal of the plane of the effective photosensitive area of ​​the first optical sensing module is less than an angle threshold, and the angle threshold is less than 90°.

[0028] Furthermore, each of the light-concentrating units corresponds to a light-blocking unit below it; the central axis of the light-concentrating unit is perpendicular to the effective photosensitive area plane of the first optical sensing module, and the light-blocking unit corresponding to the light-concentrating unit intersects with the central axis of the light-concentrating unit; the projection of the light-blocking unit corresponding to the light-concentrating unit on the integrated chip is located within the projection of the light-concentrating unit on the integrated chip.

[0029] Furthermore, the light-uniforming structure also includes a dielectric layer disposed between the light-concentrating unit and the integrated chip, and the at least one light-blocking unit is disposed within the dielectric layer.

[0030] Furthermore, it also includes a fourth filter layer, which is disposed between the dielectric layer and the integrated chip or between the light-concentrating unit and the light-transmitting layer, and the vertical projection of the fourth filter layer at least covers the effective photosensitive area of ​​the first optical sensing module.

[0031] Furthermore, the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer arranged vertically, and the optical sensor further includes a fifth filter layer disposed between the first sub-dielectric layer and the second sub-dielectric layer. The vertical projection of the fifth filter layer at least covers the effective photosensitive area of ​​the first optical sensing module.

[0032] Furthermore, the light-uniform structure also includes a light-transmitting encapsulation layer, which is disposed on the upper surface of the dielectric layer, and the at least one light-concentrating unit is located within the light-transmitting encapsulation layer.

[0033] Furthermore, the refractive index of the light-concentrating unit is greater than the refractive index of the light-transmitting encapsulation layer.

[0034] Furthermore, the refractive index difference between the light-concentrating unit and the light-transmitting encapsulation layer is greater than 0.25.

[0035] Furthermore, the refractive index difference between the light-concentrating unit and the light-transmitting encapsulation layer is greater than 0.4.

[0036] Furthermore, the light-blocking unit includes a circular light-blocking unit, and in a direction perpendicular to the integrated chip, the central axis of the light-blocking unit corresponding to the light-concentrating unit coincides with the central axis of the light-concentrating unit.

[0037] Furthermore, the light-uniforming structure includes multiple light-concentrating units, which are arranged in an array.

[0038] Furthermore, the light-uniform structure is a nanoimprint layer, an ink layer, a diffusion film, or a transparent plate filled with diffusion particles.

[0039] Furthermore, it also includes a sixth filter layer, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module;

[0040] When the light-uniforming structure is disposed above the light-transmitting layer, the sixth light-filtering layer is disposed on the light-uniforming structure, or between the light-uniforming structure and the light-transmitting layer, or between the light-transmitting layer and the integrated chip;

[0041] When the light-uniforming structure is disposed between the light-transmitting layer and the integrated chip, the sixth light-filtering layer is disposed on the light-transmitting layer, or between the light-transmitting layer and the light-uniforming structure, or between the light-uniforming structure and the integrated chip.

[0042] Furthermore, when the second optical sensing module is integrated within the integrated chip, the optical sensor further includes a seventh filter layer, which is disposed above the integrated chip, and the vertical projection of the seventh filter layer at least covers the effective photosensitive area of ​​the second optical sensing module.

[0043] Furthermore, the first optical sensing module is used to detect visible light, and the second optical sensing module is used to detect infrared light.

[0044] To achieve the above-mentioned technical objectives, the second aspect of this utility model discloses an electronic device, including the optical sensor described in the first aspect.

[0045] The beneficial effects of this utility model are as follows:

[0046] The optical sensor of this invention expands the effective field of view angle above the effective photosensitive area of ​​the first optical sensing module by setting a light-uniforming structure above the effective photosensitive area of ​​the first optical sensing module. This increases the angle of effective light received by the effective photosensitive area of ​​the first optical sensing module, thereby improving the application performance of the optical sensor. The integrated chip integrates multiple functional modules, and the length and width of the optical sensor are approximately equal to the length and width of the integrated chip, thus minimizing the area of ​​the optical sensor. The light-uniforming structure is set above the light-transmitting layer or between the light-transmitting layer and the integrated chip, without increasing the length and width of the optical sensor. The height of the light-uniforming structure is also very small, thereby enabling the miniaturization design of the optical sensor. Attached Figure Description

[0047] Figure 1 This is a schematic diagram of the light distribution in a screenless state.

[0048] Figure 2 This is a schematic diagram of the light distribution under the screen.

[0049] Figure 3 This is a longitudinal sectional view of the optical sensor according to the first embodiment of this utility model.

[0050] Figure 4 This is a longitudinal sectional view of the optical sensor according to the second embodiment of this utility model.

[0051] Figure 5 This is a longitudinal sectional view of the optical sensor according to the third embodiment of this utility model.

[0052] Figure 6 This is a longitudinal sectional view of the optical sensor according to the fourth embodiment of this utility model.

[0053] Figure 7 This is a longitudinal sectional view of the optical sensor according to the fifth embodiment of this utility model.

[0054] Figure 8 This is a longitudinal sectional view of the optical sensor according to the sixth embodiment of this utility model.

[0055] Figure 9 This is a longitudinal sectional view of the optical sensor according to the seventh embodiment of this utility model.

[0056] Figure 10 This is a longitudinal sectional view of the optical sensor according to the eighth embodiment of this utility model.

[0057] Figure 11 This is a longitudinal sectional view of the optical sensor according to the ninth embodiment of this utility model.

[0058] Figure 12 This is a longitudinal sectional view of the optical sensor according to the tenth embodiment of this utility model.

[0059] Figure 13 This is a longitudinal sectional view of the optical sensor according to the eleventh embodiment of this utility model.

[0060] Figure 14 This is a longitudinal sectional view of the optical sensor according to the twelfth embodiment of the present invention.

[0061] Figure 15 This is a longitudinal sectional view of the optical sensor according to the thirteenth embodiment of this utility model.

[0062] Figure 16 This is a longitudinal sectional view of the optical sensor according to the fourteenth embodiment of this utility model.

[0063] Figure 17 This is a longitudinal sectional view of the optical sensor according to the fifteenth embodiment of this utility model.

[0064] Figure 18 This is a longitudinal sectional view of the optical sensor according to the sixteenth embodiment of the present invention.

[0065] Figure 19 This is a longitudinal sectional view of the optical sensor according to the seventeenth embodiment of the present invention.

[0066] Figure 20 This is a longitudinal sectional view of the optical sensor according to the eighteenth embodiment of this utility model.

[0067] Figure 21 This is a longitudinal sectional view of the optical sensor according to the nineteenth embodiment of this utility model.

[0068] Figure 22 This is a schematic diagram of light focusing according to an embodiment of this application.

[0069] Figure 23 This is a schematic diagram of light focusing according to an embodiment of this application.

[0070] Figure 24 This is a schematic diagram of light incident according to an embodiment of this application.

[0071] Figure 25 This is a longitudinal sectional view of the optical sensor according to the twentieth embodiment of the present invention.

[0072] Figure 26 This is a longitudinal sectional view of the optical sensor according to the twenty-first embodiment of this utility model.

[0073] Figure 27 This is a longitudinal sectional view of the optical sensor according to the twenty-second embodiment of this utility model.

[0074] Figure 28 This is a longitudinal sectional view of the optical sensor according to the twenty-third embodiment of this utility model.

[0075] Figure 29 This is a longitudinal sectional view of the optical sensor according to the twenty-fourth embodiment of this utility model.

[0076] Figure 30 This is a longitudinal sectional view of the optical sensor according to the twenty-fifth embodiment of this utility model.

[0077] Figure 31 This is a longitudinal sectional view of the optical sensor according to the twenty-sixth embodiment of this utility model.

[0078] Figure 32 This is a longitudinal sectional view of the optical sensor according to the twenty-seventh embodiment of the present invention.

[0079] Figure 33 This is a longitudinal sectional view of the optical sensor according to the twenty-eighth embodiment of this utility model.

[0080] Figure 34 This is a longitudinal sectional view of the optical sensor according to the twenty-ninth embodiment of this utility model.

[0081] Figure 35 This is a longitudinal sectional view of the optical sensor according to the thirtieth embodiment of this utility model.

[0082] Figure 36 This is a longitudinal sectional view of the optical sensor according to the thirty-first embodiment of this utility model.

[0083] In the picture,

[0084] 1. Integrated chip; 11. First optical sensing module; 12. Second optical sensing module; 13. Through-silicon via structure; 131. First insulating layer; 132. Metal layer; 133. Second insulating layer; 14. Pad; 15. Redistribution layer; 16. Third insulating layer; 2. Transparent layer; 3. Light homogenizing structure; 31. Focusing unit; 32. Blocking unit; 33. Dielectric layer; 331. First sub-dielectric layer; 332. Second sub-dielectric layer; 34. Transparent encapsulation layer; 4. Solder ball array; 51. First filter layer; 52. Second filter layer; 53. Third filter layer; 54. Fourth filter layer; 55. Fifth filter layer; 56. Sixth filter layer; 57. Seventh filter layer; 6. Transparent adhesive layer; 7. Dike; 8. Air gap; 9. Filler layer. Detailed Implementation

[0085] The optical sensor and electronic device provided by this utility model will be explained and described in detail below with reference to the accompanying drawings.

[0086] In practical applications, the light detection performance of optical sensors is more accurate when the intensity of the received light is more than half that of light with an incident angle of 0°. This intensity of light is called effective light. Light with an incident angle of 0° refers to light that is incident at a 0° angle to the normal to the photosensitive plane, i.e., light in the normal direction, hereinafter referred to as 0° light. On the light intensity distribution curve, the angular range of light with an intensity half that of the 0° light is called the half-power angle. Therefore, in practical applications, the half-power angle is usually used as the application scenario for light detection and also as the screen dimming threshold.

[0087] like Figure 1 and 2 As shown, the intensity of the 0° ray is the highest, and the intensity gradually decreases from 0° towards both the positive and negative semi-axis. Under the same incident light intensity, Figure 1 This is a schematic diagram of light distribution in a screenless state, such as... Figure 1 As shown, in the screenless state, the half-power angle of the light is about 124°, and the half angle of the half-power angle (positive or negative half-axis angle) is about 62°. Figure 2 This is a schematic diagram of light distribution under the screen. The half-power angle of light after passing through the screen of some electronic devices is about 82°, and the half angle of the half-power angle (positive or negative half-axis angle) is only about 41°. It can be seen that the screen attenuates large-angle light, which reduces the field of view of under-screen light detection applications. This results in a reduction in the effective angle of light received by the optical sensor, thus degrading the application performance of the optical sensor.

[0088] This embodiment specifically discloses an optical sensor, such as... Figures 3-21 , Figures 25-36 As shown, the device includes an integrated chip 1, a light-transmitting layer 2, and a light-uniforming structure 3. The integrated chip 1 integrates a first optical sensing module 11, or a first optical sensing module 11 and a processing module (not shown), or a first optical sensing module 11 and a second optical sensing module 12, or a first optical sensing module 11, a second optical sensing module 12, and a processing module. The integrated chip 1 integrates multiple functional modules onto a single chip. The length and width of the optical sensor are approximately equal to the length and width of the integrated chip 1, minimizing the area of ​​the optical sensor. Optionally, the first optical sensing module 11 is used to detect visible light, i.e., the first optical sensing module 11 can function as an ambient light sensor or a color temperature sensor. The second optical sensing module 12 is used to detect infrared light, i.e., the second optical sensing module 12 can function as a proximity sensor. The processing module can function as at least one of an analog front-end chip, a control chip, or a signal processing chip. The first optical sensing module 11 and the second optical sensing module 12 can receive external light signals, convert the received light signals into electrical signals, and transmit the electrical signals to the processing module for processing.

[0089] Optionally, the integrated chip 1 is provided with a through-silicon via (TSV) structure 13, which is used to bring the pads 14 on the upper surface of the integrated chip 1 to the lower surface of the integrated chip 1. The TSV structure 13 is formed by etching a via on the integrated chip 1, depositing an insulating material in the via to form a first insulating layer 131, filling the first insulating layer 131 with a metal layer 132, the top of the metal layer 132 being electrically connected to the pads 14 on the upper surface of the integrated chip 1, and the bottom of the metal layer 132 extending to the lower surface of the integrated chip 1. The metal layer 132 can be a redistribution layer. Then, an insulating material is filled in the metal layer 132 to form a second insulating layer 133. The optical sensor also includes a solder ball array 4 electrically connected to an external circuit. The solder ball array 4 is located below the integrated chip 1 and electrically connected to the TSV structure 13, allowing the integrated chip 1 to be electrically connected to the external circuit. A substrate can be disposed below the solder ball array 4, and the solder ball array 4 is electrically connected to the pads of the substrate. The substrate is provided with circuitry to enable interconnection with external signals. Optionally, the solder balls can be solder balls.

[0090] Furthermore, a redistribution layer 15 is provided on the lower surface of the integrated chip 1, and the solder ball array 4 is electrically connected to the through-silicon via structure 13 through the redistribution layer 15. The redistribution layer 15 is electrically connected to the metal layer 132 of the through-silicon via structure 13, and the solder ball array 4 is disposed below the redistribution layer 15 and electrically connected to the redistribution layer 15.

[0091] Furthermore, a third insulating layer 16 may be provided on the lower surface of the redistribution layer 15 to prevent the redistribution layer 15 from contacting other conductive layers and forming a short circuit. The solder ball array 4 passes through the third insulating layer 16. The thickness of the third insulating layer 16 is smaller than the diameter of the solder ball array 4, so it does not affect the electrical connection between the solder ball array 4 and the external circuit.

[0092] Optionally, integrated chip 1 is a wafer-level packaged chip, that is, integrated chip 1 is a wafer-level TSV (Through-Silicon Via) packaged chip, which eliminates the bonding wires used to connect integrated chip 1 to external circuits, thereby reducing the area of ​​the optical sensor, so that the length and width of the optical sensor are approximately equal to the length and width of integrated chip 1, thus minimizing the area of ​​the optical sensor.

[0093] The light-transmitting layer 2 is disposed above the integrated chip 1, and the vertical projection of the light-transmitting layer 2 at least covers the effective photosensitive area (Active Area, AA area) of the first optical sensing module 11; preferably, the vertical projection area of ​​the light-transmitting layer 2 is larger than the area of ​​the effective photosensitive area of ​​the first optical sensing module 11, and more preferably, the vertical projection of the light-transmitting layer 2 covers the integrated chip 1, protecting the integrated chip 1 while ensuring that enough effective light enters the effective photosensitive areas of the first optical sensing module 11 and the second optical sensing module 12.

[0094] The light-uniform structure 3 is disposed above the light-transmitting layer 2 or between the light-transmitting layer 2 and the integrated chip 1. The vertical projection of the light-uniform structure 3 at least covers the effective photosensitive area of ​​the first optical sensing module 11. Preferably, the vertical projection area of ​​the light-uniform structure 3 is larger than the area of ​​the effective photosensitive area of ​​the first optical sensing module 11, ensuring that the light-uniform structure 3 receives enough light and performs light-uniform processing on the received light. The light after light-uniform processing then enters the effective photosensitive area of ​​the first optical sensing module 11, so that the angle of the effective light received by the effective photosensitive area of ​​the first optical sensing module 11 is as large as possible. The light-uniform processing of the light by the light-uniform structure 6 can increase the effective field of view angle above the first optical sensing module 11, thereby improving the application performance of the optical sensor.

[0095] In this embodiment, the vertical direction refers to the direction perpendicular to the integrated chip 1.

[0096] Optionally, the light-transmitting layer 2 can be a glass plate or a transparent organic plate. The transparent organic plate can be a phenolic resin plate, a PETG (polyethylene terephthalate-1,4-cyclohexanediol) plate, a PMMA (polymethyl methacrylate) plate, a PI (polyimide) plate, or a PET (polyethylene terephthalate) plate.

[0097] The light-uniforming structure 3 in this embodiment can achieve a light-uniforming effect, expanding the effective field of view angle above the first optical sensing module 11. This increases the angle of effective light received by the effective photosensitive area of ​​the first optical sensing module 11, thereby improving the performance of the optical sensor. The light-uniforming structure 3 does not increase the length and width of the optical sensor, which are approximately equal to the length and width of the integrated chip 1, minimizing the area of ​​the optical sensor. The height dimensions of the light-uniforming structure 3 and the light-transmitting layer 2 are also small, enabling miniaturized design of the optical sensor.

[0098] In some embodiments, such as Figures 3-5As shown, the light-diffusing structure 3 has a flat upper surface and multiple first protrusions on the lower surface, i.e., the light-diffusing structure 3 is a light-diffusing sheet. The first protrusions on the surface of the light-diffusing structure 3 are tiny protrusions, which can be regular or irregular in shape. This application does not specifically limit the shape of the first protrusions. The first protrusions on the surface of the light-diffusing structure 3 reflect the 0° incident light with the highest intensity and refract and scatter it into light at other angles, reducing the light intensity in the normal direction and increasing the light intensity at other angles. This results in a batwing-shaped distribution of light intensity above the first optical sensing module 11. Since the half-power angle is the beam angle when the light intensity is half that of the 0° light intensity, the reduced 0° light intensity effectively expands the half-power angle, increasing the effective field of view angle above the first optical sensing module 2. This makes the effective light angle received by the effective photosensitive area of ​​the first optical sensing module 11 larger, achieving a larger light detection capability at a wider angle. In this embodiment, the light-uniforming structure 3 is disposed between the light-transmitting layer 2 and the integrated chip 1. A light-transmitting adhesive layer 6 is disposed below the light-uniforming structure 3, and the light-uniforming structure 3 is bonded to the integrated chip 1 through the light-transmitting adhesive layer 6. The refractive index of the light-transmitting adhesive layer 6 is less than that of the light-uniforming structure 3, ensuring a difference in refractive index at the top and bottom of the surface of the light-uniforming structure 3 to guarantee the light-uniforming effect. Preferably, the refractive index difference between the light-uniforming structure 3 and the light-transmitting adhesive layer 6 is greater than 0.25; more preferably, the refractive index difference between the light-uniforming structure 3 and the light-transmitting adhesive layer 6 is greater than 0.4, ensuring a better light-uniforming effect. The light transmittance of the light-transmitting adhesive layer 6 is greater than or equal to the light transmittance of the light-transmitting layer 2. The light-transmitting adhesive layer 6 can be a transparent adhesive layer, a DAF film layer, or a water-based adhesive layer. The light-transmitting adhesive layer 6 achieves both the bonding and fixation of the light-uniforming structure 3 to the integrated chip 1 and ensures the light-uniforming effect of the light-uniforming structure 3.

[0099] like Figure 3 As shown, the upper surface of the uniform light structure 3 is bonded to the light-transmitting layer 2. The uniform light structure 3 can be formed on the light-transmitting layer 2 by nanoimprinting, dry etching or wet etching.

[0100] This application also provides an embodiment of a method. Figure 3 The method for manufacturing the optical sensor in the illustrated embodiment includes the following steps:

[0101] S1. A uniform light structure 3 is fabricated on the light-transmitting layer 2 by nanoimprinting, dry etching, or wet etching.

[0102] S2. The light-transmitting layer 2 and the light-uniforming structure 3 are bonded to the wafer of the integrated chip 1 through the light-transmitting adhesive layer 6 at the wafer level.

[0103] S3. Through silicon via etching is performed on the wafer of integrated chip 1 by grinding. Then, a first insulating layer 131, a metal layer 132 and a redistribution layer 15 (the metal layer 132 and the redistribution layer 15 can be made of the same material and fabricated at the same time), a second insulating layer 133 and a third insulating layer 16 (the second insulating layer 133 and the third insulating layer 16 can be fabricated at the same time), and a solder ball array 4 are sequentially formed. That is, wafer-level TSV packaging process, the electrical connection points are led from the pad 14 to the solder ball array 4 on the back of integrated chip 1 through the through silicon via structure 13.

[0104] S4. The wafer is cut into individual chips using a dicing technique, thus obtaining... Figure 3 The optical sensor shown is a miniaturized package that integrates a light homogenizing function and a TSV integrated chip 1.

[0105] In some alternative embodiments, such as Figure 4 and Figure 5 As shown, the optical sensor further includes a first filter layer 51, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11, for allowing light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11. In one embodiment, as... Figure 4 As shown, a first filter layer 51 is disposed on the light-transmitting layer 2, and the first filter layer 51 is attached to the upper surface of the light-transmitting layer 2. In one embodiment, as... Figure 5 As shown, the first filter layer 51 is disposed between the light-transmitting layer 2 and the light-uniforming structure 3. The upper surface of the first filter layer 51 is attached to the light-transmitting layer 2, and the lower surface of the first filter layer 51 is attached to the light-uniforming structure 3.

[0106] Optionally, the first filter layer 51 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0107] In some embodiments, such as Figures 6-8As shown, the light-uniforming structure 3 has a flat upper surface and multiple first protrusions on its lower surface. These first protrusions reflect, refract, and scatter 0° light, thereby reducing the intensity of light in the normal direction, expanding the half-power angle, and increasing the effective field of view angle above the first optical sensing module 11. This increases the effective light angle received by the effective photosensitive area of ​​the first optical sensing module 11, enabling light detection at a larger angle. The first protrusions can be regular or irregular in shape. The light-uniforming structure 3 is positioned between the light-transmitting layer 2 and the integrated chip 1. A surrounding dam 7 is provided around the lower perimeter of the light-uniforming structure 3. The surrounding dam 7 is a ring structure, such as a circular ring or a square ring, etc., which are not specifically limited in this application. The dam 7 is attached to the integrated chip 1, forming an air gap 8 between the light-uniforming structure 3 and the integrated chip 1. The vertical projection of the air gap 8 at least covers the effective photosensitive area of ​​the first optical sensing module 11. The air gap 8 is formed by the cofferdam 7 in the horizontal direction. The cofferdam 7 plays the role of supporting the light uniform structure 3 in the vertical direction so that the light uniform structure 3 and the integrated chip 1 form an air gap 8. The refractive index of air is less than that of the light uniform structure 3, so that there is a difference in refractive index on the top and bottom of the surface of the light uniform structure 3, in order to ensure the light uniformity effect.

[0108] The material of the cofferdam 7 can be the same as that of the uniform light structure 3, or it can be a rubber material or other materials. This application does not make any specific limitations, nor does it limit the refractive index of the cofferdam 7.

[0109] like Figure 6 As shown, the light-uniform structure 3 is attached to the lower surface of the light-transmitting layer 2. The light-uniform structure 3 can be formed on the light-transmitting layer 2 by nanoimprinting, dry etching or wet etching.

[0110] When the cofferdam 7 and the uniform light structure 3 are made of the same material, the uniform light structure 3 and the cofferdam 7 can be directly formed on the light-transmitting layer 2 through nanoimprinting, dry etching, or wet etching. When the cofferdam 7 is made of adhesive, it can be formed by dispensing adhesive or die-cutting DAF adhesive onto the integrated chip 1. When the cofferdam 7 is made of other materials, it can be fabricated first, and then bonded to the uniform light structure 3 and the integrated chip 1 respectively through adhesive film or dry film. The specific fabrication method of the cofferdam 7 is adjusted according to its specific material.

[0111] In some alternative embodiments, such as Figure 7 and Figure 8 As shown, the optical sensor further includes a first filter layer 51, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11, for allowing light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11. In one embodiment, as... Figure 7 As shown, the first filter layer 51 is disposed on the light-transmitting layer 2, and the first filter layer 51 is attached to the upper surface of the light-transmitting layer 2. In another embodiment, as... Figure 8As shown, the first filter layer 51 is disposed between the light-transmitting layer 2 and the light-uniforming structure 3. The upper surface of the first filter layer 51 is attached to the light-transmitting layer 2, and the lower surface of the first filter layer 51 is attached to the light-uniforming structure 3.

[0112] Optionally, the first filter layer 51 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0113] In some embodiments, such as Figures 9-14 As shown, the light-uniforming structure 3 has a flat first surface and a second surface with multiple second protrusions. The second protrusions are used to reflect, refract, and scatter 0° light, thereby reducing the light intensity in the normal direction, expanding the half-power angle, and increasing the effective field of view angle above the first optical sensing module 11. This makes the effective light angle received by the effective photosensitive area of ​​the first optical sensing module 11 larger, realizing the light detection function at a larger angle. A leveling layer 9 is attached to the second surface of the light-uniforming structure 3. The first surface of the leveling layer 9 has multiple third protrusions, which fill the gaps between the second protrusions on the second surface of the light-uniforming structure 3. The second surface of the leveling layer 9 is a flat plane. The first and second surfaces are arranged opposite each other. The refractive index of the leveling layer 9 is less than that of the light-uniforming structure 3, ensuring that there is a difference in refractive index between the upper and lower surfaces of the morphological interface of the light-uniforming structure 3 to ensure the light-uniforming effect. Preferably, the difference in refractive index between the light-uniforming structure 3 and the leveling layer 9 is greater than 0.25, and more preferably, the difference in refractive index between the light-uniforming structure 3 and the leveling layer 9 is greater than 0.4 to ensure a better light-uniforming effect. The leveling layer 9 can be a film layer or other materials with a refractive index lower than that of the uniform light structure 3. This application does not make specific limitations, as long as the refractive index difference with the uniform light structure 3 is met. The leveling layer 9 ensures the uniform light effect of the uniform light structure 3 on the one hand, and its flat lower surface facilitates the bonding and fixation with the structure below it on the other hand.

[0114] When the light-diffusing structure 3 is positioned above the light-transmitting layer 2, one of the light-diffusing structure 3 and the leveling layer 9 is positioned on top of the other, such as... Figure 9 As shown, the light-uniforming structure 3 is positioned above the leveling layer 9, with the first surface being the upper surface and the second surface being the lower surface. The lower surface of the leveling layer 9 is bonded to the light-transmitting layer 2. Figure 10 As shown, the light-uniforming structure 3 is disposed below the leveling layer 9, with the first surface being the lower surface and the second surface being the upper surface. The lower surface of the light-uniforming structure 3 is attached to the light-transmitting layer 2.

[0115] When the light-uniforming structure 3 is positioned between the light-transmitting layer 2 and the integrated chip 1, the leveling layer 9 is positioned below the light-uniforming structure 3. For example... Figure 11 As shown, the upper surface of the uniform light structure 3 is bonded to the light-transmitting layer 2, and the lower surface of the leveling layer 9 is bonded to the integrated chip 1.

[0116] When the leveling layer 9 is placed below the light-uniforming structure 3, if the leveling layer 9 is an adhesive film layer, the leveling layer 9 is directly attached to the integrated chip 1 or the light-transmitting layer 2 below it; the leveling layer 9 can also be made of other materials. After the leveling layer 9 is made, it is attached to the integrated chip 1 or the light-transmitting layer 2 below it with light-transmitting adhesive. There are no special requirements for the refractive index of the light-transmitting adhesive. Commonly used light-transmitting adhesives with a refractive index of 1.4-1.6 can be used, such as DAF adhesive or water-based adhesive.

[0117] In some alternative embodiments, such as Figures 12-16 As shown, the optical sensor also includes a second filter layer 52, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11, for allowing light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11.

[0118] When the light-uniforming structure 3 is disposed above the light-transmitting layer 2, in one embodiment, such as... Figure 12 As shown, the second filter layer 52 is disposed above the stacked light-uniforming structure 3 and the leveling layer 9, and the lower surface of the second filter layer 52 is in contact with the stacked light-uniforming structure 3 and the leveling layer 9; in one embodiment, as... Figure 13 As shown, the second filter layer 52 is disposed between the light-transmitting layer 2 and the stacked light-uniforming structure 3 and leveling layer 9. The upper surface of the second filter layer 52 is bonded to the stacked light-uniforming structure 3 and leveling layer 9, and the lower surface of the second filter layer 52 is bonded to the light-transmitting layer 2. In one embodiment, as shown... Figure 14 As shown, the second filter layer 52 is disposed between the light-transmitting layer 2 and the integrated chip 1. The upper surface of the second filter layer 52 is attached to the light-transmitting layer 2, and the lower surface of the second filter layer 52 is attached to the integrated chip 1.

[0119] When the light-uniforming structure 3 is disposed between the light-transmitting layer 2 and the integrated chip 1, in one embodiment, such as Figure 15 As shown, the second filter layer 52 is disposed on the light-transmitting layer 2, and the second filter layer 52 is attached to the upper surface of the light-transmitting layer 2; in one embodiment, as... Figure 16 As shown, the second filter layer 52 is disposed between the light-transmitting layer 2 and the light-uniforming structure 3. The upper surface of the second filter layer 52 is attached to the light-transmitting layer 2, and the lower surface of the second filter layer 52 is attached to the light-uniforming structure 3.

[0120] Optionally, the second filter layer 52 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0121] In some embodiments, such as Figures 17-19As shown, the light-uniforming structure 3 has a flat lower surface and multiple fourth protrusions on its upper surface. The light-uniforming structure 3 is disposed on the light-transmitting layer 2. The fourth protrusions are used to reflect, refract, and scatter 0° light rays, thereby reducing the light intensity in the normal direction, expanding the half-power angle, and increasing the effective field of view angle above the first optical sensing module 11. This makes the effective light angle received by the effective photosensitive area of ​​the first optical sensing module 11 larger, enabling light detection at a greater angle. The fourth protrusions can be of a regular or irregular shape.

[0122] like Figure 17 As shown, the lower surface of the uniform light structure 3 is bonded to the light-transmitting layer 2. The uniform light structure 3 can be formed on the light-transmitting layer 2 by nanoimprinting, dry etching or wet etching.

[0123] This application also provides an embodiment of a method. Figure 17 The method for manufacturing the optical sensor in the illustrated embodiment includes the following steps:

[0124] S1. The light-transmitting layer 2 is bonded to the wafer of the integrated chip 1 through the adhesive film layer at the wafer level.

[0125] S2. Through silicon via etching is performed on the wafer of integrated chip 1 by grinding. Then, a first insulating layer 131, a metal layer 132 and a redistribution layer 15 (the metal layer 132 and the redistribution layer 15 can be made of the same material and fabricated at the same time), a second insulating layer 133 and a third insulating layer 16 (the second insulating layer 133 and the third insulating layer 16 can be fabricated at the same time), and a solder ball array 4 are sequentially set. That is, wafer-level TSV packaging process, the electrical connection points are led from the pad 14 to the solder ball array 4 on the back of integrated chip 1 through the through silicon via structure 13.

[0126] S3. A uniform light structure 3 is formed on the light-transmitting layer 2 by nanoimprinting.

[0127] S4. The wafer is cut into individual chips using a dicing technique, thus obtaining... Figure 17 The optical sensor shown is a miniaturized package that integrates a light homogenizing function and a TSV integrated chip 1.

[0128] This fabrication method creates the uniform light structure 3 after the entire wafer-level TSV packaging process and before dicing, avoiding the uniform light structure 3 from undergoing the packaging process and reducing the risk of deformation of the uniform light structure 3.

[0129] In some alternative embodiments, such as Figure 18 and Figure 19 As shown, the optical sensor further includes a third filter layer 53, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11, for allowing light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11. In one embodiment, as... Figure 18 As shown, the third filter layer 53 is disposed between the light-uniforming structure 3 and the light-transmitting layer 2. The upper surface of the third filter layer 53 is attached to the light-uniforming structure 3, and the lower surface of the third filter layer 53 is attached to the light-transmitting layer 2. In one embodiment, as shown... Figure 19 As shown, the third filter layer 53 is disposed between the light-transmitting layer 2 and the integrated chip 1. The upper surface of the third filter layer 53 is attached to the light-transmitting layer 2, and the lower surface of the third filter layer 53 is attached to the integrated chip 1.

[0130] Optionally, the third filter layer 53 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0131] When the uniform light structure 3 is a structure with one side flat and the other side raised, if the uniform light structure 3 is directly attached to the light-transmitting layer 2, the uniform light structure 3 can be formed on the light-transmitting layer 2 by nanoimprinting, dry etching or wet etching; if there are other structures (such as a filter layer or a leveling layer 9) between the uniform light structure 3 and the light-transmitting layer 2, the uniform light structure 3 is formed by nanoimprinting on the filter layer or the leveling layer 9.

[0132] In some embodiments, such as Figure 20 and Figure 21 As shown, the light-uniforming structure 3 includes at least one light-concentrating unit 31 and at least one light-blocking unit 32. The light-uniforming structure 3 is disposed between the light-transmitting layer 2 and the integrated chip 1. At least one light-blocking unit 32 is disposed below each light-concentrating unit 31. The light-blocking unit 32 corresponding to the light-concentrating unit 31 is located between the light-concentrating unit 31 and the effective photosensitive area of ​​the first optical sensing module 11. The at least one light-concentrating unit 31 at least covers the effective photosensitive area of ​​the first optical sensing module 11. The light-blocking unit 32 is used to block the concentrated light from reaching the effective photosensitive area of ​​the first optical sensing module 11 after the first incident light in the incident light is concentrated by the light-concentrating unit 31 corresponding to the light-blocking unit 32. The angle between the first incident light and the normal of the plane of the effective photosensitive area of ​​the first optical sensing module 11 is less than an angle threshold, and the angle threshold is less than 90°.

[0133] The incident light with an angle less than the angle threshold between itself and the normal to the effective photosensitive area plane of the first optical sensing module 11 is focused by the light-collecting unit 31 and blocked by the light-blocking unit 32, thus failing to illuminate the effective photosensitive area of ​​the first optical sensing module 11. Incident light with an angle greater than or equal to the angle threshold between itself and the normal to the effective photosensitive area plane of the first optical sensing module 11 can normally illuminate the effective photosensitive area of ​​the first optical sensing module 11 after passing through the light-collecting unit 31. Therefore, the illumination intensity of the small-angle incident light detected by the effective photosensitive area of ​​the first optical sensing module 11 decreases, and the first optical sensing module 11... Since the light intensity of the large-angle incident light detected by the effective photosensitive area of ​​the first optical sensing module 11 remains unchanged, when detecting the light intensity of the incident light, the difference between the light intensity of the large-angle incident light detected by the effective photosensitive area of ​​the first optical sensing module 11 and the light intensity of the small-angle incident light is smaller under the same light intensity. This improves the photosensitive ability of the first optical sensing module 11 to detect large-angle light, thereby increasing the angle of the effective light received by the effective photosensitive area of ​​the first optical sensing module 11, improving the performance of the optical sensor, and realizing the light detection function at a larger angle.

[0134] In one example, when multiple light-blocking units 32 are included between each focusing unit 31 and the effective photosensitive area of ​​the first optical sensing module 11, the multiple light-blocking units 32 can be arranged in parallel on the same plane and spliced ​​together to form a large light-blocking unit 32, or the multiple light-blocking units 32 can be arranged in parallel and dispersed on the same plane, or the multiple light-blocking units 32 can be arranged on different planes; no limitation is made here. The focusing unit 31 can concentrate light. Specifically, after light shines on the focusing unit 31, the light is refracted, causing a change in the transmission direction. Light shining on different positions of the focusing unit 31 will be concentrated, and the light-blocking units 32 can block the concentrated light. Figure 22 This is a schematic diagram of light focusing provided in an embodiment of this application, such as... Figure 22 As shown, after the light is transmitted to the focusing unit 31, the light is refracted, causing a change in the direction of light transmission. The light blocking unit 32 is disposed between the focusing unit 31 and the effective photosensitive area of ​​the first optical sensing module 11, opposite to the light blocking unit 32. After the first incident light passes through the focusing unit 31, it is refracted and its propagation direction changes. The light then shines on the light blocking unit 32 and is blocked by the light blocking unit 32, preventing it from shining on the effective photosensitive area of ​​the first optical sensing module 11. The first incident light is light whose angle between the incident light and the normal to the plane of the effective photosensitive area of ​​the first optical sensing module 11 is less than an angle threshold, for example: Figure 22 The image shows a first incident light beam with an angle of α and a first incident light beam with an angle of 0° (i.e., perpendicular incidence). The angle α between the first incident light beam and the normal is less than an angle threshold. Figure 23 This is another schematic diagram of light focusing provided in an embodiment of this application, such as... Figure 23 As shown, the second incident light, whose angle between the incident light and the normal to the effective photosensitive area plane of the first optical sensing module 11 is greater than or equal to the angle threshold, will not be blocked by the light blocking unit 32 after passing through the focusing unit 31, and will directly illuminate the effective photosensitive area of ​​the first optical sensing module 11. Figure 23 The angle β between the light and the normal to the effective photosensitive area plane of the first optical sensing module 11 is greater than or equal to the angle threshold. It should be understood that, due to the characteristics of light, light rays with an angle greater than 90° between their angle and the normal to the effective photosensitive area plane of the first optical sensing module 11 will not illuminate the effective photosensitive area of ​​the first optical sensing module 11; therefore, the angle threshold is less than 90°. It should be noted that, due to the presence of the light-blocking unit 32, the light rays of the first incident light whose angle with the normal to the effective photosensitive area plane of the first optical sensing module 11 is less than the angle threshold are blocked by the light-blocking unit 32 after passing through the light-focusing unit 31. Conversely, the light rays of the second incident light whose angle with the normal to the effective photosensitive area plane of the first optical sensing module 11 is greater than or equal to the angle threshold are not blocked by the light-blocking unit 32 after passing through the light-focusing unit 31 and can directly illuminate the effective photosensitive area of ​​the first optical sensing module 11. It should also be noted that the effective photosensitive area of ​​the first optical sensing module 11 in this embodiment is not completely covered by at least one focusing unit 31. Therefore, some rays of the first incident light, whose angle between the ray and the normal to the plane of the effective photosensitive area of ​​the first optical sensing module 11 is less than the angle threshold, do not pass through the focusing unit 31, but instead pass through a position where no focusing unit 31 is provided, and can then illuminate the effective photosensitive area of ​​the first optical sensing module 11. For example: Figure 24 This is a schematic diagram of light incident according to an embodiment of this application, as shown below. Figure 24 As shown, a portion of the first incident light with an angle α passes through the gap between the focusing units 31 and illuminates the effective photosensitive area of ​​the first optical sensing module 11. Therefore, the optical sensor in this embodiment reduces the amount of first incident light reaching the effective photosensitive area of ​​the first optical sensing module 11 at an angle less than the angle threshold between the first incident light and the normal to the plane of the effective photosensitive area of ​​the first optical sensing module 11, rather than completely blocking the first incident light. For the second incident light with an angle greater than or equal to the angle threshold between the second incident light and the normal to the plane of the effective photosensitive area of ​​the first optical sensing module 11, the amount of light reaching the effective photosensitive area of ​​the first optical sensing module 11 remains unchanged. Thus, this application can expand the effective field of view angle above the first optical sensing module 11 through the refraction effect of the focusing units 31.

[0135] Optional, such as Figure 21As shown, each focusing unit 31 corresponds to a light-blocking unit 32 below it; the central axis of the focusing unit 31 is perpendicular to the effective photosensitive area plane of the first optical sensing module 11, and the light-blocking unit 32 corresponding to the focusing unit 31 intersects the central axis of the focusing unit 31; the projection of the light-blocking unit 32 corresponding to the focusing unit 31 on the integrated chip 1 is located within the projection of the focusing unit 31 on the integrated chip 1. The light-blocking unit 32 can be a light-blocking unit of various shapes, such as a square light-blocking unit, a circular light-blocking unit, etc. The light-blocking unit 32 can be set at any position in the effective photosensitive area plane of the focusing unit 31 and the first optical sensing module 11. For example, the light-blocking unit 32 can be set on the upper surface of the integrated chip 1, or it can be set above the integrated chip 1 without contacting it. The light-blocking unit 32 corresponding to different focusing units 31 can be set at different positions (e.g., Figure 21 (As shown). It should be understood that since the light-blocking unit 32 needs to block incident light at a small angle, that is, to block the light rays of the first incident light whose angle between the incident light and the normal of the effective photosensitive area plane of the first optical sensing module 11 is less than the angle threshold after passing through the light-concentrating unit 31, and the first incident light is generally concentrated around the central axis of the light-concentrating unit 31 after passing through the light-concentrating unit 31, the light-blocking unit 32 corresponding to the light-concentrating unit 31 intersects with the central axis of the light-concentrating unit 31. It should also be noted that since the second incident light whose angle between the incident light and the normal of the effective photosensitive area plane of the first optical sensing module 11 is greater than or equal to the angle threshold is generally concentrated at the edge of the light-concentrating unit 31 after passing through the light-concentrating unit 31, in the direction perpendicular to the effective photosensitive area plane of the first optical sensing module 11, the projection of the light-blocking unit 32 corresponding to the light-concentrating unit 31 on the integrated chip 1 is located within the projection of the light-concentrating unit 31 on the integrated chip 1, that is, the vertical projection of the light-blocking unit 32 does not exceed the vertical projection of the corresponding light-concentrating unit 31. While blocking small-angle incident light, it can prevent the light-blocking unit 32 from blocking large-angle incident light, and it can also prevent the light-blocking unit 32 from exceeding the light-concentrating unit 31 so that incident light not located at the position of the light-concentrating unit 31 is blocked by the light-blocking unit 32, thereby expanding the effective light angle entering the effective photosensitive area of ​​the first optical sensing module 11.

[0136] Optional, such as Figure 20 and Figure 21As shown, the uniform light structure 3 also includes a dielectric layer 33, which is disposed between the light-concentrating unit 31 and the integrated chip 1. At least one light-blocking unit 32 is disposed within the dielectric layer 33. The dielectric layer 33 provides a light transmission medium and supports the light-concentrating unit 31. After filling the dielectric layer 33, the light refractive index of the light-concentrating unit 31 and the dielectric layer 33 are similar, which can prevent the light propagation direction from changing due to the difference between the light refractive index of air and the light refractive index of the light-concentrating unit 31 after the light is emitted from the light-concentrating unit 31. In addition, the dielectric layer 33 can seal the effective photosensitive area of ​​the first optical sensing module 11, which can prevent the plane of the effective photosensitive area of ​​the first optical sensing module 11 from being affected by foreign objects. The light-blocking unit 32 can be completely wrapped within the dielectric layer 33, or it can be disposed on the integrated chip 1 with the dielectric layer 33 covering the sides and top of the light-blocking unit 32.

[0137] In one possible implementation, the light-blocking unit 32 includes a reflective layer or a light-absorbing layer.

[0138] The light-blocking unit 32 may include a reflective layer, which can reflect light and block it. In one example, the reflective layer may be made of metal, such as metal traces or metal layers on the surface of the integrated chip 1. The light-blocking unit 32 may also include a light-absorbing layer, which can absorb light and block it. In one example, the light-absorbing layer may be a black material or a coating. The light-blocking unit 32 may be set in the dielectric layer 33 and / or on the surface of the integrated chip 1 by setting a black material or coating.

[0139] The focusing unit 31 can be a lens. In some other implementations, the focusing unit 31 can also be a Fresnel zone plate, a superlens, or other devices with focusing function.

[0140] Optional, such as Figure 25 and Figure 26 As shown, the optics also include a fourth filter layer 54, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11. The fourth filter layer 54 allows light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11. In one embodiment, as... Figure 25 As shown, the fourth filter layer 54 is disposed between the dielectric layer 33 and the integrated chip 1, with the upper surface of the fourth filter layer 54 in contact with the dielectric layer 33 and the lower surface of the fourth filter layer 54 in contact with the integrated chip 1; in another embodiment, as... Figure 26 As shown, the fourth filter layer 54 is disposed between the light-concentrating unit 31 and the light-transmitting layer 2. The fourth filter layer 54 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0141] Optional, such as Figure 27As shown, the dielectric layer 33 includes a first sub-dielectric layer 331 and a second sub-dielectric layer 332 arranged vertically. The optical sensor also includes a fifth filter layer 55, which is disposed between the first sub-dielectric layer 331 and the second sub-dielectric layer 332. The vertical projection of the fifth filter layer 55 at least covers the effective photosensitive area of ​​the first optical sensing module 11. The fifth filter layer 55 allows light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11. The fifth filter layer 55 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer. The light-blocking unit 32 can be disposed within the first sub-dielectric layer 331 or the second sub-dielectric layer 332. When each focusing unit 31 corresponds to multiple light-blocking units 32, the light-blocking unit 32 corresponding to each focusing unit 31 can be disposed within the first sub-dielectric layer 331 and / or the second sub-dielectric layer 332. When each focusing unit 31 corresponds to a single light-blocking unit 32, the light-blocking unit 32 can be disposed within the first sub-dielectric layer 331 or the second sub-dielectric layer 332. The light-blocking units 32 corresponding to different focusing units 31 can be disposed at different positions.

[0142] Optional, such as Figure 20 , Figure 21 , Figures 25-27 As shown, the light-uniforming structure 3 also includes a light-transmitting encapsulation layer 34, which is disposed on the upper surface of the dielectric layer 33. At least one light-concentrating unit 31 is located within the light-transmitting encapsulation layer 34. The light-transmitting encapsulation layer 34 protects the light-concentrating unit 31 and facilitates its adhesion and fixation to the first light-transmitting layer 2. Figure 26 As shown, the fourth filter layer 54 is disposed on the light-transmitting encapsulation layer 34.

[0143] Optionally, the refractive index of the focusing unit 31 is greater than that of the light-transmitting encapsulation layer 34. When the refractive indices of the focusing unit 31 and the light-transmitting encapsulation layer 34 are different, the focusing unit 31 can function as a light-concentrating unit, that is, to focus the light passing through the focusing unit 31. Preferably, the refractive index difference between the focusing unit 31 and the light-transmitting encapsulation layer 34 is greater than 0.25; more preferably, the refractive index difference between the focusing unit 31 and the light-transmitting encapsulation layer 34 is greater than 0.4, which can achieve a better light-concentrating effect.

[0144] The light-blocking unit 32 includes a circular light-blocking unit. In the direction perpendicular to the integrated chip 1, the central axis of the light-blocking unit 32 corresponding to the light-concentrating unit 31 coincides with the central axis of the light-concentrating unit 31. This can block the light that is concentrated near the axis after passing through the light-concentrating unit 31, thereby blocking the first incident light whose angle with the normal of the effective photosensitive area plane of the first optical sensing module 11 is less than the angle threshold. This can weaken the small-angle incident light detected by the first optical sensing module 11, thereby improving the application performance of the optical sensor.

[0145] In one possible implementation, the diameter of the light-blocking unit 32 is in the range of [1 μm, 10 μm], and / or the height of the light-concentrating unit 31 is in the range of [0.5 μm, 8 μm]. In this embodiment, the light-concentrating unit 31 can be a lens, and the height of the light-concentrating unit 31 is the distance from the top of the lens to the surface of the dielectric layer 33 in contact with the light-concentrating unit 31. In a preferred example, the height of the light-concentrating unit 31 is in the range of [1 μm, 5 μm].

[0146] Optionally, the uniform light structure 3 includes multiple focusing units 31, arranged in an array. The multiple focusing units 31 are arranged in a square periodic pattern to form an array of focusing units 31. It should be understood that since the first incident light, whose angle with the normal to the effective photosensitive area plane of the first optical sensing module 11 is less than an angle threshold, is blocked by the light-blocking unit 32 after passing through the focusing unit 31, any adjacent focusing units 31 can have a certain distance between them. The first incident light, whose angle with the normal to the effective photosensitive area plane of the first optical sensing module 11 is less than an angle threshold, can illuminate the portion where no focusing unit 31 is set. For example, between any adjacent focusing units 31 or at a position where no focusing unit 31 is set, it can directly illuminate the effective photosensitive area of ​​the first optical sensing module 11. This allows the detection of the first incident light whose angle with the normal to the effective photosensitive area plane of the first optical sensing module 11 is less than an angle threshold.

[0147] In one possible implementation, the arrangement period of the focusing units 31 ranges from [4μm to 40μm], and the aperture of the focusing units 31 ranges from [4μm to 40μm], wherein the arrangement period is greater than or equal to the aperture of the focusing units 31. The arrangement period of the focusing units 31 refers to the distance between the centers of two adjacent focusing units 31 in the array, and the aperture of the focusing units 31 refers to the effective light-transmitting diameter of the focusing units 31. Since there can be a certain spacing between adjacent focusing units 31, and the spacing between adjacent focusing units 31 is equal to the difference between the arrangement period and the aperture of the focusing units 31, the arrangement period needs to be greater than or equal to the aperture of the focusing units 31.

[0148] In a preferred example, the arrangement period of the focusing unit 31 ranges from [5μm to 25μm], the aperture of the focusing unit 31 ranges from [5μm to 25μm], and the arrangement period is greater than or equal to the aperture of the focusing unit 31.

[0149] In one possible implementation, the distance between the lower surface of the focusing unit 31 and the corresponding light-blocking unit 32 in the direction perpendicular to the effective photosensitive area plane of the first optical sensing module 11 is in the range of [5μm, 30μm]. By adjusting the distance between the lower surfaces of the focusing unit 31 and the light-blocking unit 32, the relative position between the focal plane of the light-blocking unit 32 and the focusing unit 31 can be adjusted, thereby adjusting the amount of light blocked by the light-blocking unit 32. As a result, light can be blocked as needed, and the degree of attenuation of small-angle incident light can be adjusted.

[0150] In some embodiments, such as Figures 28-35 As shown, the light-uniforming structure 3 is a nanoimprint layer, an ink layer, a diffusion film, or a transparent plate filled with diffusion particles. The light-uniforming structure 3 can be disposed above the light-transmitting layer 2 or between the light-transmitting layer 2 and the integrated chip 1. By diffusing the incident light, the intensity of the 0° light is reduced. Since the half-power angle is the beam angle when the light intensity is half that of the 0° light intensity, the 0° light intensity is reduced, which indirectly expands the angle of the half-power angle and expands the effective field of view angle above the first optical sensing module 11. This makes the angle of the effective light received by the effective photosensitive area of ​​the first optical sensing module 11 larger, realizing the light detection capability at a larger angle, thereby improving the performance of the optical sensor.

[0151] In one embodiment, such as Figure 28 As shown, the light-diffusing structure 3 is attached to the upper surface of the light-transmitting layer 2; in another embodiment, as... Figure 29 As shown, the light-diffusing structure 3 is disposed between the light-transmitting layer 2 and the integrated chip 1. The upper surface of the light-diffusing structure 3 is bonded to the light-transmitting layer 2, and the lower surface of the light-diffusing structure 3 is bonded to the integrated chip 1. When the light-diffusing structure 3 is an ink layer, the ink can be printed or coated on the surface of the light-transmitting layer 2 to form an ink layer. In this case, the light-transmitting layer 2 can serve as a carrier for the light-diffusing structure 3. When the light-diffusing structure 3 is a diffusion film, the diffusion film is bonded to the light-transmitting layer 2 or the integrated chip 1 through a light-transmitting adhesive film. When the light-diffusing structure 3 is a transparent plate filled with diffusion particles, the transparent plate is bonded to the light-transmitting layer 2 or the integrated chip 1 through a light-transmitting adhesive film. The light-transmitting adhesive film can be selected as a DAF (Die Attach Film) film or a water-based adhesive film.

[0152] When the light-diffusing structure 3 is an ink layer or a diffusion film, the thickness of the light-diffusing structure 3 can be set as needed. This application does not make specific limitations, as long as it can achieve good light diffusion capability and effectively reduce the intensity of 0° light.

[0153] The particle size of the diffusing particles and the filling ratio in the transparent plate can be set as needed. This application does not impose specific limitations, as long as they have good light diffusion capabilities and effectively reduce the intensity of 0° light.

[0154] Optionally, the transparent sheet can be a glass sheet or a transparent organic sheet. The transparent organic sheet can be a phenolic resin sheet, PETG sheet, PMMA sheet, PI sheet, or PET sheet. The transparent sheet and the light-transmitting layer 2 can be made of the same or different materials.

[0155] Optionally, the diffusion particles are one or more of the following: acrylate resin, methacrylate resin, styrene resin, urethane resin, silicone resin, zinc oxide, silicon dioxide, titanium dioxide, zirconium oxide, aluminum oxide, zinc sulfide, or barium sulfate.

[0156] This application also provides an embodiment of a method. Figure 28 The method for manufacturing the optical sensor in the illustrated embodiment includes the following steps:

[0157] S1. Create a uniform light structure 3 on the light-transmitting layer 2.

[0158] S2. The light-transmitting layer 2 and the light-uniforming structure 3 are bonded to the wafer of the integrated chip 1 through a light-transmitting adhesive film at the wafer level.

[0159] S3. Through silicon via etching is performed on the wafer of integrated chip 1 by grinding. Then, a first insulating layer 131, a metal layer 132 and a redistribution layer 15 (the metal layer 132 and the redistribution layer 15 can be made of the same material and fabricated at the same time), a second insulating layer 133 and a third insulating layer 16 (the second insulating layer 133 and the third insulating layer 16 can be fabricated at the same time), and a solder ball array 4 are sequentially set. That is, the wafer-level TSV packaging process leads the electrical connection points from the pad 14 to the solder ball array 4 on the back of the integrated chip 1 through the through silicon via structure 13.

[0160] S4. The wafer is cut into individual chips using a dicing technique, thus obtaining... Figure 28 The optical sensor shown is a miniaturized package that integrates a light homogenizing function and a TSV integrated chip 1.

[0161] In some alternative embodiments, such as Figures 30-35 As shown, the optical sensor also includes a sixth filter layer 56, the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module 11, for allowing light of a specific wavelength to enter the effective photosensitive area of ​​the first optical sensing module 11.

[0162] When the light-uniforming structure 3 is disposed above the light-transmitting layer 2, in one embodiment, such as... Figure 30 As shown, the sixth filter layer 56 is disposed on the light-uniforming structure 3, and the sixth filter layer 56 is attached to the upper surface of the light-uniforming structure 3; in one embodiment, as... Figure 31 As shown, the sixth filter layer 56 is disposed between the light-uniforming structure 3 and the light-transmitting layer 2. The upper surface of the sixth filter layer 56 is attached to the light-uniforming structure 3, and the lower surface of the sixth filter layer 56 is attached to the light-transmitting layer 2. In one embodiment, as shown... Figure 32 As shown, the sixth filter layer 56 is disposed between the light-transmitting layer 2 and the integrated chip 1. The upper surface of the sixth filter layer 56 is attached to the light-transmitting layer 2, and the lower surface of the sixth filter layer 56 is attached to the integrated chip 1.

[0163] When the light-uniforming structure 3 is disposed between the light-transmitting layer 2 and the integrated chip 1, in one embodiment, such as Figure 33 As shown, the sixth filter layer 56 is disposed on the light-transmitting layer 2, and the sixth filter layer 56 is attached to the upper surface of the light-transmitting layer 2; in one embodiment, as... Figure 34 As shown, the sixth filter layer 56 is disposed between the light-transmitting layer 2 and the light-uniforming structure 3. The upper surface of the sixth filter layer 56 is bonded to the light-transmitting layer 2, and the lower surface of the sixth filter layer 56 is bonded to the integrated chip 1. In one embodiment, as... Figure 35 As shown, the sixth filter layer 56 is disposed between the light-uniforming structure 3 and the integrated chip 1. The upper surface of the sixth filter layer 56 is attached to the light-uniforming structure 3, and the lower surface of the sixth filter layer 56 is attached to the integrated chip 1. Preferably, the sixth filter layer 56 is disposed above the light-uniforming structure 3. The light first passes through the sixth filter layer 56 for filtering and then undergoes light-uniforming processing by the light-uniforming structure 3 before entering the effective photosensitive area of ​​the first optical sensing module 11.

[0164] Optionally, the sixth filter layer 56 can be an infrared cut-off filter layer or a stacked color filter layer and an infrared cut-off filter layer.

[0165] In some embodiments, such as Figure 36 As shown, when the integrated chip 1 integrates the second optical sensing module 12, the optical sensor also includes a seventh filter layer 57. The seventh filter layer 57 is disposed above the integrated chip 1, and its vertical projection at least covers the effective photosensitive area of ​​the second optical sensing module 12. The seventh filter layer 57 is used to allow light of a specific wavelength to enter the effective photosensitive area of ​​the second optical sensing module 12. If the vertical projection of the light-uniforming structure 3 does not cover the effective photosensitive area of ​​the second optical sensing module 12, the seventh filter layer 57 can be attached to the upper or lower surface of the light-transmitting layer 2; if the vertical projection of the light-uniforming structure 3 covers the effective photosensitive area of ​​the second optical sensing module 12, the seventh filter layer 57 can be on the same layer as the filter layer above the effective photosensitive area of ​​the first optical sensing module 11 and laid flat.

[0166] Optionally, the seventh filter layer 57 can be an infrared-transmitting film layer.

[0167] Verification has shown that, in an application environment below a screen, under the same incident light intensity and angle, when comparing an optical sensor without a uniform light structure 3 but with the optical sensor of this embodiment, the effective field of view half-angle above the first optical sensing module 11 of the optical sensor without the uniform light structure 3 is about 37°, while the optical sensor of this embodiment can increase the effective field of view half-angle to more than 55°, significantly expanding the effective field of view angle.

[0168] In this embodiment, the light-uniforming structure 3 is directly integrated with the wafer-level TSV packaged chip (integrated chip 1). The length and width of the package structure do not need to be increased, and the height of the optical sensor can be controlled to approximately 0.7 mm. Compared to the prior art where a support is placed outside the entire package structure to house the light-uniforming structure 3 (which significantly increases the overall length, width, and height of the optical sensor, with a height of approximately 1 mm), the area of ​​the optical sensor in this application is approximately equal to the area of ​​the integrated chip 1, minimizing the optical sensor area. Furthermore, the light-uniforming structure 3 is positioned above the integrated chip 1, adding only a slight thickness to the original thickness of the integrated chip 1, effectively reducing the overall size of the optical sensor. This application effectively reduces the overall package size while expanding the field of view for ambient light detection applications.

[0169] This application also discloses an electronic device including the optical sensor described in the above embodiments. The electronic device can be an electronic device with a screen, and the optical sensor is disposed below the screen. Improvements to the optical sensor facilitate the miniaturization and thinning of electronic devices. The electronic device can be a laptop, mobile phone, tablet computer, desktop computer, gaming device, in-vehicle electronic device, wearable smart device, etc.

[0170] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0171] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0172] In the description of this specification, the references to terms such as "this embodiment," "an embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any at least one embodiment or example. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0173] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0174] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and simple improvements made on the substantive content of the present utility model should be included within the protection scope of the present utility model.

Claims

1. An optical sensor, characterized in that, It includes an integrated chip (1), a light-transmitting layer (2), and a light-diffusing structure (3). The integrated chip (1) integrates a first optical sensing module (11), or a first optical sensing module (11) and a processing module, or a first optical sensing module (11) and a second optical sensing module (12), or a first optical sensing module (11), a second optical sensing module (12) and a processing module. The light-transmitting layer (2) is disposed above the integrated chip (1), and the vertical projection of the light-transmitting layer (2) covers at least the effective photosensitive area of ​​the first optical sensing module (11). The light-diffusing structure (3) is disposed above the light-transmitting layer (2) or between the light-transmitting layer (2) and the integrated chip (1), and the vertical projection of the light-diffusing structure (3) covers at least the effective photosensitive area of ​​the first optical sensing module (11).

2. The optical sensor according to claim 1, characterized in that, The integrated chip (1) is provided with a through-silicon via (13), which is used to bring the pads (14) on the upper surface of the integrated chip (1) to the bottom of the integrated chip (1); the optical sensor also includes a solder ball array (4) electrically connected to an external circuit, which is located below the integrated chip (1) and electrically connected to the through-silicon via (13), so that the integrated chip (1) is electrically connected to the external circuit.

3. The optical sensor according to claim 2, characterized in that, The lower surface of the integrated chip (1) is provided with a redistribution layer (15), and the solder ball array (4) is electrically connected to the through silicon via structure (13) through the redistribution layer (15).

4. The optical sensor according to any one of claims 1-3, characterized in that, The integrated chip (1) is a wafer-level packaged chip.

5. The optical sensor according to claim 1, characterized in that, The light-uniform structure (3) has a flat upper surface and multiple first protrusions on the lower surface. The light-uniform structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1). A light-transmitting adhesive layer (6) is provided below the light-uniform structure (3). The refractive index of the light-transmitting adhesive layer (6) is less than that of the light-uniform structure (3). The light-uniform structure (3) is bonded to the integrated chip (1) through the light-transmitting adhesive layer (6).

6. The optical sensor according to claim 5, characterized in that, The refractive index difference between the uniform light structure (3) and the light-transmitting adhesive layer (6) is greater than 0.

25.

7. The optical sensor according to claim 5, characterized in that, The difference in refractive index between the uniform light structure (3) and the light-transmitting adhesive layer (6) is greater than 0.

4.

8. The optical sensor according to claim 1, characterized in that, The light-uniform structure (3) has a flat upper surface and multiple first protrusions on the lower surface. The light-uniform structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1). A dam (7) is provided around the lower part of the light-uniform structure (3). The dam (7) is attached to the integrated chip (1) so that an air gap (8) is formed between the light-uniform structure (3) and the integrated chip (1). The vertical projection of the air gap (8) covers at least the effective photosensitive area of ​​the first optical sensing module (11).

9. The optical sensor according to any one of claims 5-8, characterized in that, It also includes a first filter layer (51), the vertical projection of which at least covers the effective light-sensitive area of ​​the first optical sensing module (11), and the first filter layer (51) is disposed on the light-transmitting layer (2) or between the light-transmitting layer (2) and the light-uniforming structure (3).

10. The optical sensor according to claim 1, characterized in that, The light-uniform structure (3) has a flat first surface and a second surface with multiple second protrusions. A filler layer (9) is attached to the second surface of the light-uniform structure (3). The first surface of the filler layer (9) has multiple third protrusions, which fill the gaps between the second protrusions on the second surface of the light-uniform structure (3). The second surface of the filler layer (9) is a flat plane. The first surface and the second surface are arranged opposite to each other. The refractive index of the filler layer (9) is less than the refractive index of the light-uniform structure (3). When the light-diffusing structure (3) is disposed above the light-transmitting layer (2), one of the light-diffusing structure (3) and the leveling layer (9) is disposed on top of the other. When the light-diffusing structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1), the leveling layer (9) is disposed below the light-diffusing structure (3).

11. The optical sensor according to claim 10, characterized in that, The difference in refractive index between the uniform light structure (3) and the leveling layer (9) is greater than 0.

25.

12. The optical sensor according to claim 10, characterized in that, The refractive index difference between the uniform light structure (3) and the filler layer (9) is greater than 0.

4.

13. The optical sensor according to any one of claims 10-12, characterized in that, It also includes a second filter layer (52), the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module (11). When the light-diffusing structure (3) is disposed above the light-transmitting layer (2), the second light-filtering layer (52) is disposed above the stacked light-diffusing structure (3) and the leveling layer (9), or between the light-transmitting layer (2) and the stacked light-diffusing structure (3) and the leveling layer (9), or between the light-transmitting layer (2) and the integrated chip (1); When the light-diffusing structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1), the second light-filtering layer (52) is disposed on the light-transmitting layer (2) or between the light-transmitting layer (2) and the light-diffusing structure (3).

14. The optical sensor according to claim 1, characterized in that, The light-uniform structure (3) has a flat lower surface and multiple fourth protrusions on the upper surface. The light-uniform structure (3) is disposed on the light-transmitting layer (2).

15. The optical sensor according to claim 14, characterized in that, It also includes a third filter layer (53), the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module (11), and the third filter layer (53) is disposed between the light-diffusing structure (3) and the light-transmitting layer (2), or between the light-transmitting layer (2) and the integrated chip (1).

16. The optical sensor according to claim 1, characterized in that, The light-diffusing structure (3) includes at least one light-focusing unit (31) and at least one light-blocking unit (32). The light-diffusing structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1). At least one light-blocking unit (32) is disposed below each light-focusing unit (31). The light-blocking unit (32) corresponding to the light-focusing unit (31) is located between the light-focusing unit (31) and the effective photosensitive area of ​​the first optical sensing module (11). The at least one light-focusing unit (31) at least covers the effective photosensitive area of ​​the first optical sensing module (11). The light-blocking unit (32) is used to block the focused light from reaching the effective photosensitive area of ​​the first optical sensing module (11) after the first incident light in the incident light is focused by the light-focusing unit (31) corresponding to the light-blocking unit (32). The angle between the first incident light and the normal of the plane of the effective photosensitive area of ​​the first optical sensing module (11) is less than an angle threshold, which is less than 90°.

17. The optical sensor according to claim 16, characterized in that, Below each light-concentrating unit (31) is a light-blocking unit (32); the central axis of the light-concentrating unit (31) is perpendicular to the effective photosensitive area plane of the first optical sensing module (11), and the light-blocking unit (32) corresponding to the light-concentrating unit (31) intersects with the central axis of the light-concentrating unit (31); the projection of the light-blocking unit (32) corresponding to the light-concentrating unit (31) on the integrated chip (1) is located within the projection of the light-concentrating unit (31) on the integrated chip (1).

18. The optical sensor according to claim 16, characterized in that, The light-diffusing structure (3) further includes a dielectric layer (33), which is disposed between the light-focusing unit (31) and the integrated chip (1), and the at least one light-blocking unit (32) is disposed within the dielectric layer (33).

19. The optical sensor according to claim 18, characterized in that, It also includes a fourth filter layer (54), which is disposed between the dielectric layer (33) and the integrated chip (1) or between the light-concentrating unit (31) and the light-transmitting layer (2). The vertical projection of the fourth filter layer (54) at least covers the effective photosensitive area of ​​the first optical sensing module (11).

20. The optical sensor according to claim 18, characterized in that, The dielectric layer (33) includes a first sub-dielectric layer (331) and a second sub-dielectric layer (332) arranged vertically. The optical sensor also includes a fifth filter layer (55), which is disposed between the first sub-dielectric layer (331) and the second sub-dielectric layer (332). The vertical projection of the fifth filter layer (55) at least covers the effective photosensitive area of ​​the first optical sensing module (11).

21. The optical sensor according to claim 18, characterized in that, The light-diffusing structure (3) further includes a light-transmitting encapsulation layer (34), which is disposed on the upper surface of the medium layer (33), and the at least one light-concentrating unit (31) is located within the light-transmitting encapsulation layer (34).

22. The optical sensor according to claim 21, characterized in that, The refractive index of the light-concentrating unit (31) is greater than that of the light-transmitting encapsulation layer (34).

23. The optical sensor according to claim 22, characterized in that, The difference in refractive index between the light-concentrating unit (31) and the light-transmitting encapsulation layer (34) is greater than 0.

25.

24. The optical sensor according to claim 22, characterized in that, The difference in refractive index between the light-concentrating unit (31) and the light-transmitting encapsulation layer (34) is greater than 0.

4.

25. The optical sensor according to claim 17, characterized in that, The light-blocking unit (32) includes a circular light-blocking unit. In the direction perpendicular to the integrated chip (1), the central axis of the light-blocking unit (32) corresponding to the light-concentrating unit (31) coincides with the central axis of the light-concentrating unit (31).

26. The optical sensor according to claim 16, characterized in that, The uniform light structure (3) includes multiple light-concentrating units (31), which are arranged in an array.

27. The optical sensor according to claim 1, characterized in that, The uniform light structure (3) is a nanoimprint layer, an ink layer, a diffusion film, or a transparent plate filled with diffusion particles.

28. The optical sensor according to claim 27, characterized in that, It also includes a sixth filter layer (56), the vertical projection of which at least covers the effective photosensitive area of ​​the first optical sensing module (11); When the light-uniform structure (3) is disposed above the light-transmitting layer (2), the sixth light-filtering layer (56) is disposed on the light-uniform structure (3), or between the light-uniform structure (3) and the light-transmitting layer (2), or between the light-transmitting layer (2) and the integrated chip (1); When the light-diffusing structure (3) is disposed between the light-transmitting layer (2) and the integrated chip (1), the sixth light-filtering layer (56) is disposed on the light-transmitting layer (2), or between the light-transmitting layer (2) and the light-diffusing structure (3), or between the light-diffusing structure (3) and the integrated chip (1).

29. The optical sensor according to claim 1, characterized in that, When the second optical sensing module (12) is integrated in the integrated chip (1), the optical sensor further includes a seventh filter layer (57), which is disposed above the integrated chip (1), and the vertical projection of the seventh filter layer (57) covers at least the effective photosensitive area of ​​the second optical sensing module (12).

30. The optical sensor according to claim 1, characterized in that, The first optical sensing module (11) is used to detect visible light, and the second optical sensing module (12) is used to detect infrared light.

31. An electronic device, characterized in that, Includes the optical sensor described in any one of claims 1-30.

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