LED chip and lamp panel

Abstract

The application provides an LED chip and a lamp panel. The LED chip comprises: a first chip unit, the first chip unit comprising a first array substrate and a first light control film layer, the first light control film layer being arranged on the light-emitting side of the first array substrate; and a second chip unit, the second chip unit comprising a second array substrate and a second light control film layer, the second array substrate being arranged on the side of the first light control film layer away from the first array substrate, and the second light control film layer being arranged on the light-emitting side of the second array substrate. Each LED chip can form at least two light patterns, and can be compatible with multiple light-emitting schemes of lamp panels.

Description

Technical Field

[0001] This utility model relates to the field of display technology, and in particular to an LED chip and a lamp board. Background Technology

[0002] In the current era of rapid development in display technology, Mini LED TVs have achieved remarkable progress in recent years thanks to their superior performance. With continuous technological advancements, local dimming and halo control capabilities have become core elements in evaluating the picture quality of Mini LED TVs. In the pursuit of superior local dimming and halo control, factors such as the number of LED chips, the number of backlight zones, optical distance (OD), and control algorithms all play a crucial role in the final technological presentation.

[0003] However, current technological solutions in the industry have significant shortcomings. Specifically, in these solutions, one type of LED chip corresponds to only one light pattern. This means that to change the light pattern of the light panel, the LED chip must be replaced. This design not only greatly limits the flexibility and precision of light control, making it difficult to quickly and effectively adjust the light pattern according to different image requirements in practical applications, thus affecting the optimization and improvement of image quality; at the same time, replacing LED chips also significantly increases the manufacturing difficulty and cost, making a series of steps, including chip selection, procurement, replacement processes, and subsequent debugging and calibration, more complex and cumbersome. Utility Model Content

[0004] This application provides an LED chip and a lamp board, each LED chip being able to form at least two light patterns, and being compatible with the light output schemes of various lamp boards.

[0005] This application provides an LED chip, including:

[0006] The first chip unit includes a first array substrate and a first light control film layer, wherein the first light control film layer is disposed on the light-emitting side of the first array substrate;

[0007] The second chip unit includes a second array substrate and a second light control film layer. The second array substrate is disposed on the side of the first light control film layer away from the first array substrate, and the second light control film layer is disposed on the light-emitting side of the second array substrate.

[0008] In some embodiments, the first array substrate includes a first P-type layer, a first multiple quantum well layer, and a first N-type layer stacked together, wherein the first P-type layer is closer to the first light control film layer than the first N-type layer; the second array substrate includes a second N-type layer, a second multiple quantum well layer, and a second P-type layer stacked together, wherein the second N-type layer is disposed on the first light control film layer, and the second light control film layer is disposed on the side of the second P-type layer away from the second N-type layer.

[0009] In some embodiments, the LED chip further includes a first positive electrode and a first negative electrode, wherein the first positive electrode is electrically connected to the first P-type layer and the first negative electrode is electrically connected to the first N-type layer.

[0010] In some embodiments, the first negative electrode is disposed on the side of the first light-controlling film layer away from the first P-type layer, the first light-controlling film layer, the first P-type layer and the first multiple quantum well layer form a first via, and the first negative electrode passes through the first via and is electrically connected to the first N-type layer.

[0011] In some embodiments, the first positive electrode is disposed on the side of the first light-controlling film layer away from the first P-type layer, the first light-controlling film layer forms a second via, and the first positive electrode passes through the second via and is electrically connected to the first P-type layer.

[0012] In some embodiments, the LED chip further includes a second positive electrode and a second negative electrode, wherein the second positive electrode is electrically connected to the second P-type layer and the second negative electrode is electrically connected to the second N-type layer.

[0013] In some embodiments, the second negative electrode is disposed on the side of the second light-controlling film layer away from the second P-type layer, and the second light-controlling film layer, the second P-type layer, and the second multiple quantum well layer form a third via, with the second negative electrode passing through the third via and electrically connected to the second N-type layer; the second positive electrode is disposed on the side of the second light-controlling film layer away from the second P-type layer, and the second light-controlling film layer forms a fourth via, with the second positive electrode passing through the fourth via and electrically connected to the second P-type layer.

[0014] In some embodiments, the orthographic projection of the second array substrate onto the first array substrate is located within the first array substrate.

[0015] In some embodiments, the LED chip further includes a third chip unit, which includes a third array substrate and a third light control film layer. The third array substrate is disposed on the side of the second light control film layer away from the second array substrate, and the third light control film layer is disposed on the light-emitting side of the third array substrate.

[0016] This application embodiment also provides a light panel, including:

[0017] Circuit board;

[0018] The LED chip is the aforementioned LED chip, and the LED chip is disposed on the circuit board.

[0019] The LED chip and lamp board provided in this application embodiment include a first chip unit and a second chip unit stacked together. The first chip unit includes a first array substrate and a first light-controlling film layer, which is disposed on the light-emitting side of the first array substrate and can perform preliminary control of the light. The second chip unit includes a second array substrate and a second light-controlling film layer, which is disposed on the side of the first light-controlling film layer away from the first array substrate, and the second light-controlling film layer is disposed on the light-emitting side of the second array substrate, and can further control the light. Since the first and second light-controlling film layers have different effects on the light, different light patterns are formed. The combination of the first and second chip units allows each LED chip to form at least two light patterns, which is compatible with the light emission schemes of various lamp boards. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the first structure of the LED chip provided in the embodiments of this application.

[0022] Figure 2 The following are photometric distribution diagrams of different light patterns emitted by the LED chip provided in the embodiments of this application: Figure (1) is the Lambert light pattern, Figure (2) is the side-emitting light pattern, Figure (3) is the batwing light pattern, and Figure (4) is the focused light pattern.

[0023] Figure 3 This is a schematic diagram of a second structure of the LED chip provided in an embodiment of this application. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0025] This application provides an LED chip and a lamp board, each LED chip capable of forming at least two light patterns, and compatible with various light emission schemes of lamp boards. The following is a detailed description with reference to the accompanying drawings.

[0026] Please see Figure 1 , Figure 1 This is a schematic diagram of a first structure of an LED chip provided in an embodiment of this application. This application provides an LED chip 10, also known as a light-emitting diode chip, which is a solid-state semiconductor device that can directly convert electricity into light. In the field of display technology, the LED chip 10 is a basic unit constituting light-emitting devices such as displays, and its performance directly affects key indicators of the display device such as brightness, color, and contrast.

[0027] The LED chip 10 includes a first chip unit 11 and a second chip unit 12. The first chip unit 11 and the second chip unit 12 are stacked.

[0028] The first chip unit 11 includes a first array substrate 111 and a first light-controlling film layer 112, which is disposed on the light-emitting side of the first array substrate 111. From an optical principle perspective, the first light-controlling film layer 112 can, through its special material and microstructure, perform preliminary control on the light emitted from the first array substrate 111. For example, it can utilize optical phenomena such as refraction and reflection to change the divergence angle of the light. In practical applications, this preliminary control can make the light propagate more concentrated in a specific direction, reducing light scattering and waste, thereby improving the efficiency of light utilization.

[0029] The second chip unit 12 includes a second array substrate 121 and a second light-controlling film layer 122. The second array substrate 121 is disposed on the side of the first light-controlling film layer 112 away from the first array substrate 111, and the second light-controlling film layer 122 is disposed on the light-emitting side of the second array substrate 121, playing a role in further controlling the light. The second light-controlling film layer 122 has a similar effect on light as the first light-controlling film layer 112, and will not be described in detail here. In addition, the second light-controlling film layer 122 may use different materials or microstructures to achieve more precise adjustment of light. For example, the second light-controlling film layer 122 may focus more on adjusting the light intensity or selectively transmitting light of specific wavelengths, thus complementing the first light-controlling film layer 112 to achieve more complex optical effects.

[0030] In practical applications, different light patterns have their own unique advantages. For example, one light pattern may have high brightness and a narrow divergence angle, suitable for clearly displaying information; another light pattern may have soft light and uniform brightness distribution, suitable for a soft light effect. This multi-light pattern characteristic allows the LED chip 10 to be compatible with various light emission schemes of lamp panels. The light patterns formed by the first light control film layer 112 and the second light control film layer 122 are different; please refer to [link / reference]. Figure 2 , Figure 2 The following are photometric distribution diagrams of different light patterns emitted by the LED chip provided in this application embodiment: Figure (1) is a Lambert light pattern, Figure (2) is a side-emitting light pattern, Figure (3) is a batwing light pattern, and Figure (4) is a focused light pattern. The first light-controlling film layer 112 or the second light-controlling film layer 122 can form one of the above light patterns. For example, when only the first chip unit 11 is working, the first light-controlling film layer 112 forms a Lambert light pattern; when only the second chip unit 12 is working, the second light-controlling film layer 122 forms a side-emitting light pattern; when the first chip unit 11 and the second chip unit 12 work together, they are superimposed to form a focused light pattern.

[0031] It is understood that the first chip unit 11 or the second chip unit 12 can be controlled to emit light independently. For example, if the first chip unit 11 emits light, the first light-controlling film layer 112 can control the emitted light to form a first type of emitted light pattern. If only the second chip unit 12 emits light, the second light-controlling film layer 122 can control the emitted light to form a second type of emitted light pattern.

[0032] In traditional display technologies, the light pattern of the LED panel is often fixed, which limits the application scenarios and display effects of the display device. However, the LED chip 10 in this embodiment can adapt to the design requirements of different LED panels by virtue of its ability to form multiple light patterns.

[0033] Please see Figure 3 , Figure 3 This is a schematic diagram of a second structure of an LED chip provided in an embodiment of this application. The first array substrate 111 includes a first P-type layer 1111, a first multiple quantum well layer 1112, and a first N-type layer 1113 stacked together. The first P-type layer 1111 is closer to the first light-controlling film layer 112 than the first N-type layer 1113. The second array substrate 121 includes a second N-type layer 1211, a second multiple quantum well layer 1212, and a second P-type layer 1213 stacked together. The second N-type layer 1211 is disposed on the first light-controlling film layer 112, and the second light-controlling film layer 122 is disposed on the side of the second P-type layer 1213 away from the second N-type layer 1211.

[0034] In semiconductor materials, a P-type layer (such as the first P-type layer 1111 mentioned above) is a semiconductor layer formed by doping with trivalent elements (such as boron, gallium, etc.). The majority carriers in a P-type layer are holes. In the LED chip 10, the P-type layer interacts with other layers to participate in the recombination process of electrons and holes, thereby generating photons and realizing the conversion of electrical energy into light energy. In contrast to the P-type layer, an N-type layer (such as the first N-type layer 1113 mentioned above) is a semiconductor layer formed by doping with pentavalent elements (such as phosphorus, arsenic, etc.). The majority carriers in an N-type layer are electrons. During the operation of the LED chip 10, the N-type layer provides a channel for electron transport and, together with the P-type layer, forms a PN junction, promoting the recombination of electrons and holes for light emission. A multi-quantum-well layer (such as the first multi-quantum-well layer 1112 mentioned above) is a semiconductor layer composed of multiple quantum well structures. The quantum well structure has a unique electronic band structure, which can effectively restrict the movement of electrons and holes, improve the recombination efficiency of electrons and holes, and thus enhance the luminous intensity and luminous efficiency of the LED chip 10. Multiple quantum well layers are one of the key structures for LED chip 10 to achieve high-efficiency light emission.

[0035] From a semiconductor physics perspective, the first P-type layer 1111 and the first N-type layer 1113 together form a PN junction, which is the core structure for the LED chip 10 to emit light. When a forward voltage is applied to the LED chip 10, electrons in the first N-type layer 1113 move towards the first P-type layer 1111, while holes in the first P-type layer 1111 move towards the first N-type layer 1113. Electrons and holes meet and recombine in the first multiple quantum well layer 1112, releasing photons and thus realizing the conversion of electrical energy into light energy. As the main region for electron and hole recombination, the unique quantum well structure of the first multiple quantum well layer 1112 can effectively improve the recombination efficiency of electrons and holes, enhancing the luminous intensity and luminous efficiency of the LED chip 10.

[0036] The design of the first P-type layer 1111 being closer to the first light-controlling film layer 112 is of significant importance from an optical perspective. When light is generated from the first multiple quantum well layer 1112 and propagates outward, factors such as the material and thickness of the first P-type layer 1111 will have a certain impact on the light, while the first light-controlling film layer 112 can further precisely control the light. For example, the refractive index of the first P-type layer 1111 can work in conjunction with the first light-controlling film layer 112 to cause specific refraction and reflection of light when it passes through the interface between the two, thereby changing the direction of light propagation and achieving preliminary focusing or divergence control of the light.

[0037] The second array substrate 121 also has a unique stacked structure, including a second N-type layer 1211, a second multiple quantum well layer 1212, and a second P-type layer 1213 stacked together. The second N-type layer 1211 is disposed on the first light-controlling film layer 112, and this tight connection ensures the stability of electrical and signal transmission between the first chip unit 11 and the second chip unit 12. The second light-controlling film layer 122 is disposed on the side of the second P-type layer 1213 away from the second N-type layer 1211, playing a key role in re-modulating the light.

[0038] The working principle of the second array substrate 121 is similar to that of the first array substrate 111. The second N-type layer 1211 and the second P-type layer 1213 form a PN junction. Under the action of a forward voltage, electrons and holes recombine in the second quantum well layer 1212 to emit light. The second quantum well layer 1212 also has a highly efficient electron-hole recombination capability, which can further enhance the light-emitting performance of the LED chip 10. The second light-controlling film layer 122 can regulate the light emitted from the direction of the second quantum well layer 1212 according to actual needs. For example, by adjusting the microstructure or material of the second light-controlling film layer 122, parameters such as the polarization state and color purity of the light can be changed, thereby cooperating with the regulation effect of the first light-controlling film layer 112 to form more complex and diverse light patterns.

[0039] In practical applications, this unique stacked structure and light-control film design enable the LED chip 10 to form a variety of different light patterns. Each light pattern has its own unique advantages, meeting diverse display requirements and thus achieving zoned control.

[0040] The LED chip 10 also includes a first positive electrode 131 and a first negative electrode 132. The first positive electrode 131 is electrically connected to the first P-type layer 1111, and the first negative electrode 132 is electrically connected to the first N-type layer 1113. In the LED chip 10, the positive and negative electrodes are the access points for providing electrical energy. When a positive voltage is applied to the LED chip 10, that is, when the positive electrode is connected to the positive terminal of the power supply and the negative electrode is connected to the negative terminal of the power supply, the LED chip 10 can work normally and emit light.

[0041] The first negative electrode 132 is disposed on the side of the first light-controlling film layer 112 away from the first P-type layer 1111. The first light-controlling film layer 112, the first P-type layer 1111, and the first multiple quantum well layer 1112 form a first via 141. The first negative electrode 132 passes through the first via 141 and is electrically connected to the first N-type layer 1113, which solves the problem of electrical connection between different layers and allows current to be smoothly transmitted from the first negative electrode 132 to the first N-type layer 1113, thus ensuring the normal operation of the chip.

[0042] From a manufacturing process perspective, forming the first via 141 requires precise control and advanced process technology. First, holes must be accurately positioned and formed on the first light-controlling film layer 112, the first P-type layer 1111, and the first multi-quantum-well layer 1112 to ensure that the conductive material can fully fill and form good electrical contact with each layer. Then, highly conductive materials, such as metallic copper, are filled into the holes, and through a series of processing steps, they are tightly bonded to the surrounding semiconductor materials to form a stable and reliable electrical connection.

[0043] The first positive electrode 131 is disposed on the side of the first light-controlling film layer 112 away from the first P-type layer 1111. The first light-controlling film layer 112 forms a second via 142. The first positive electrode 131 passes through the second via 142 and is electrically connected to the first P-type layer 1111. The first positive electrode 131 is connected to the first P-type layer 1111 through the second via 142, so that electrical energy can be smoothly transmitted to the P-type layer and participate in the recombination process of electrons and holes.

[0044] The first positive electrode 131 and the first negative electrode 132 are disposed on the periphery of the second chip unit 12. On the one hand, the first positive electrode 131 and the first negative electrode 132 are disposed on the side of the first light-controlling film layer 112 away from the first P-type layer 1111, avoiding direct interference of the electrodes with light propagation and facilitating efficient light propagation and control. On the other hand, the electrical connection between different layers is achieved through the first via 141 and the second via 142, improving the space utilization of the LED chip 10 and making the structure of the LED chip 10 more compact.

[0045] The LED chip 10 also includes a second positive electrode 151 and a second negative electrode 152. The second positive electrode 151 is electrically connected to the second P-type layer 1213, and the second negative electrode 152 is electrically connected to the second N-type layer 1211. When a positive voltage is applied through the second positive electrode 151 and the second negative electrode 152, electrons and holes in the second array substrate 121 can effectively recombine and emit light at the PN junction of the second chip unit 12.

[0046] The second negative electrode 152 is disposed on the side of the second light-controlling film layer 122 away from the second P-type layer 1213. The second light-controlling film layer 122, the second P-type layer 1213, and the second multiple quantum well layer 1212 form a third via 161. The second negative electrode 152 passes through the third via 161 and is electrically connected to the second N-type layer 1211. The second positive electrode 151 is disposed on the side of the second light-controlling film layer 122 away from the second P-type layer 1213. The second light-controlling film layer 122 forms a fourth via 162. The second positive electrode 151 passes through the fourth via 162 and is electrically connected to the second P-type layer 1213.

[0047] On the one hand, placing the electrodes on the side of the second light-controlling film layer 122 away from the second P-type layer 1213 avoids direct interference of the electrodes with light propagation, which is beneficial for the efficient propagation and precise control of light within the second chip unit 12. On the other hand, the electrical connection between different layers is achieved through the third via 161 and the fourth via 162, which improves the space utilization of the LED chip 10, making the structure of the LED chip 10 more compact and facilitating the miniaturization and integration of the LED chip 10.

[0048] The orthographic projection of the second array substrate 121 onto the first array substrate 111 lies within the first array substrate 111, reducing optical path interference and ensuring the independence of multi-layer optical pattern modulation. From a structural compactness perspective, this layout allows the chip to integrate more functional units within a limited space, improving the chip's space utilization. As mentioned above, the first positive electrode 131 and the first negative electrode 132 can be disposed on the periphery of the second chip unit 12. From an electrical connection perspective, placing the electrodes on the periphery of the second chip unit 12 facilitates connection to external circuits, reduces connection resistance and signal interference, and improves the reliability and stability of the electrical connection.

[0049] The LED chip 10 also includes a third chip unit, which comprises a third array substrate and a third light-controlling film layer. The third array substrate is disposed on the side of the second light-controlling film layer 122 away from the second array substrate 121, and the third light-controlling film layer is disposed on the light-emitting side of the third array substrate. The third light-controlling film layer can precisely control the light emitted from the third array substrate through its own material, microstructure, and other factors to form a third light pattern. For example, optical phenomena such as refraction and reflection can be used to change the divergence angle and intensity distribution of the light, making the light more suitable for specific display requirements.

[0050] In practical applications, the three chip units can work independently or collaboratively. When the first chip unit 11, the second chip unit 12, and the third chip unit emit light respectively, the first light-controlling film layer 112, the second light-controlling film layer 122, and the third light-controlling film layer can respectively regulate the light to form three different light patterns. These light patterns can have different characteristics such as brightness, color, and divergence angle, and are suitable for different display scenarios. For example, in outdoor display scenarios that require high brightness and high contrast, a light pattern with a strong light-focusing effect can be selected; while in indoor lighting scenarios that require soft light, a light pattern with uniform light distribution can be selected.

[0051] This application embodiment also provides a lamp board, which includes a circuit board and an LED chip 10, the LED chip 10 being disposed on the circuit board.

[0052] A light board is a substrate used to mount lighting components (such as LED chips), providing electrical connections and mechanical support for these components. It is a key component of lighting equipment. A circuit board, also known as a printed circuit board, is manufactured using electronic printing techniques. Conductive patterns and holes are formed on an insulating substrate according to a specific design. It is used to mount and connect various electronic components, such as resistors, capacitors, and chips, enabling circuit connections and signal transmission in electronic devices.

[0053] The LED chip 10 itself has a high photoelectric conversion efficiency, which can convert most of the electrical energy into light energy and reduce energy loss. The circuit board plays a role in optimizing power transmission and signal control. Through reasonable circuit design, the resistance of current during transmission can be reduced, heat generation can be reduced, and the energy efficiency of the entire lamp board can be improved.

[0054] The LED chip 10 and lamp board provided in this application embodiment include a first chip unit 11 and a second chip unit 12 stacked together. The first chip unit 11 includes a first array substrate 111 and a first light-controlling film layer 112. The first light-controlling film layer 112 is disposed on the light-emitting side of the first array substrate 111 and can perform preliminary control of light. The second chip unit 12 includes a second array substrate 121 and a second light-controlling film layer 122. The second array substrate 121 is disposed on the side of the first light-controlling film layer 112 away from the first array substrate 111, and the second light-controlling film layer 122 is disposed on the light-emitting side of the second array substrate 121 and can further control the light. Since the first light-controlling film layer 112 and the second light-controlling film layer 122 have different effects on light, different light patterns are formed. The combination of the first chip unit 11 and the second chip unit 12 enables each LED chip 10 to form at least two light patterns, which is compatible with the light emission schemes of various lamp boards.

[0055] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0056] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0057] The LED chip and lamp board provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An LED chip, characterized in that, include: The first chip unit includes a first array substrate and a first light control film layer, wherein the first light control film layer is disposed on the light-emitting side of the first array substrate; The second chip unit includes a second array substrate and a second light control film layer. The second array substrate is disposed on the side of the first light control film layer away from the first array substrate, and the second light control film layer is disposed on the light-emitting side of the second array substrate.

2. The LED chip according to claim 1, characterized in that, The first array substrate includes a first P-type layer, a first multiple quantum well layer, and a first N-type layer stacked together, wherein the first P-type layer is closer to the first light control film layer than the first N-type layer; the second array substrate includes a second N-type layer, a second multiple quantum well layer, and a second P-type layer stacked together, wherein the second N-type layer is disposed on the first light control film layer, and the second light control film layer is disposed on the side of the second P-type layer away from the second N-type layer.

3. The LED chip according to claim 2, characterized in that, It also includes a first positive electrode and a first negative electrode, wherein the first positive electrode is electrically connected to the first P-type layer and the first negative electrode is electrically connected to the first N-type layer.

4. The LED chip according to claim 3, characterized in that, The first negative electrode is disposed on the side of the first light-controlling film layer away from the first P-type layer. The first light-controlling film layer, the first P-type layer, and the first multiple quantum well layer form a first via. The first negative electrode passes through the first via and is electrically connected to the first N-type layer.

5. The LED chip according to claim 3, characterized in that, The first positive electrode is disposed on the side of the first light-controlling film layer away from the first P-type layer. The first light-controlling film layer forms a second via. The first positive electrode passes through the second via and is electrically connected to the first P-type layer.

6. The LED chip according to claim 2, characterized in that, It also includes a second positive electrode and a second negative electrode, the second positive electrode being electrically connected to the second P-type layer and the second negative electrode being electrically connected to the second N-type layer.

7. The LED chip according to claim 6, characterized in that, The second negative electrode is disposed on the side of the second light-controlling film layer away from the second P-type layer. The second light-controlling film layer, the second P-type layer, and the second multiple quantum well layer form a third via. The second negative electrode passes through the third via and is electrically connected to the second N-type layer. The second positive electrode is disposed on the side of the second light-controlling film layer away from the second P-type layer. The second light-controlling film layer forms a fourth via. The second positive electrode passes through the fourth via and is electrically connected to the second P-type layer.

8. The LED chip according to any one of claims 1 to 7, characterized in that, The orthographic projection of the second array substrate onto the first array substrate is located within the first array substrate.

9. The LED chip according to any one of claims 1 to 7, characterized in that, It also includes a third chip unit, which includes a third array substrate and a third light control film layer. The third array substrate is disposed on the side of the second light control film layer away from the second array substrate, and the third light control film layer is disposed on the light-emitting side of the third array substrate.

10. A light panel, characterized in that, include: Circuit board; The LED chip is the LED chip according to any one of claims 1 to 9, and the LED chip is disposed on the circuit board.

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