High voltage chip insulation structure and thick film hybrid integrated circuit

Abstract

The utility model provides a kind of high-voltage chip insulation structure and thick film hybrid integrated circuit, high-voltage chip insulation structure includes substrate, the substrate is fixed with bonding wire, high-voltage chip and high-temperature-resistant insulating cap, the insulating cap is enclosed between with substrate and is isolated cavity, the high-voltage chip is located in isolated cavity;The insulating cap is also equipped with through slot, through slot with the isolated cavity communication, the one end of bonding wire is from through slot and is inserted into isolated cavity and is fixedly connected with high-voltage chip.Adopting the utility model, by high-voltage chip being in isolated cavity, the reliable insulation of high-voltage chip and surrounding components, bonding wire etc. is guaranteed, and product quality is improved;Through slot, it is convenient for bonding wire installation, and the electrical connection reliability between bonding wire and high-voltage chip is improved;Meanwhile, the insulation performance of insulating cap is not destroyed by sintering process environment, so that the installation sequence of insulating cap has little influence on the manufacturing process of hybrid integrated circuit, and production efficiency is high.

Description

Technical Field

[0001] This utility model relates to the field of hybrid integrated circuit technology, specifically to a high-voltage chip insulation structure and a thick-film hybrid integrated circuit. Background Technology

[0002] Hybrid integrated circuits (ICs) are fabricated on a substrate using film deposition methods to create thick-film or thin-film elements and their interconnections. Discrete semiconductor chips, monolithic ICs, or micro-components are then assembled on the same substrate and further packaged. The semiconductor chips are connected to the thick-film or thin-film elements via bonding wires. Based on the film deposition method, hybrid ICs are classified into thick-film hybrid ICs and thin-film hybrid ICs. Thick-film hybrid ICs are fabricated using screen printing and sintering processes, with film thicknesses typically exceeding 15 micrometers. Thin-film hybrid ICs are fabricated using vacuum deposition, with film thicknesses typically ranging from several hundred to several thousand angstroms. Furthermore, hybrid ICs contain both high-voltage and low-voltage chips. High-voltage chips typically operate at voltages above 20V, can withstand higher electric field strengths, and thus have better anti-interference capabilities; while low-voltage chips operate at voltages below 5V.

[0003] In hybrid integrated circuits, high-voltage chips typically require molding compounds to further enhance the insulation between the chip and surrounding components, bonding wires, etc. However, in thick-film hybrid integrated circuit products, bare chips are usually used for assembly to facilitate subsequent sintering processes. After sintering, it is difficult to individually mount molding compounds on the tiny chips, and the mounting operation can easily affect the reliability of the connection between the bonding wires and the high-voltage chip. When the insulation distance between the high-voltage chip and surrounding components, bonding wires, etc., cannot meet the insulation requirements, product discharge and arcing are prone to occur during operation, leading to product failure. Utility Model Content

[0004] The technical problem to be solved by this utility model is: how to ensure reliable insulation between the high voltage chip and surrounding components, bonding wires, etc.

[0005] The technical solution of this utility model to solve the above-mentioned technical problems is as follows:

[0006] This utility model provides a high-voltage chip insulation structure, including a substrate, on which a bonding wire, a high-voltage chip and a high-temperature resistant insulating cap are fixed. An isolation cavity is formed between the insulating cap and the substrate, and the high-voltage chip is located in the isolation cavity. The insulating cap is also provided with a through groove, which communicates with the isolation cavity. One end of the bonding wire extends from the through groove into the isolation cavity and is fixedly connected to the high-voltage chip.

[0007] The beneficial effects of this utility model are:

[0008] This invention utilizes an insulating cap to form an isolation cavity with the substrate. The high-voltage chip is housed within this cavity, ensuring reliable insulation between the high-voltage chip and surrounding components, bonding wires, etc. This prevents arcing between the high-voltage chip and surrounding components during operation, thus improving product quality. The through-slot allows for the placement of bonding wires and solder, facilitating bonding wire installation and improving the reliability of the electrical connection between the bonding wires and the high-voltage chip. Furthermore, compared to molding compounds, the insulating cap's high-temperature resistance means its insulation performance is unaffected by the sintering process environment. Therefore, the installation sequence of the insulating cap has minimal impact on the manufacturing process of hybrid integrated circuits, resulting in high production efficiency.

[0009] Based on the above technical solution, the present invention can be further improved as follows.

[0010] Furthermore, the insulating cap has a spherical structure, and the edge of the insulating cap is attached and fixed to the substrate.

[0011] The spherical structure occupies less space compared to rectangular structures and eliminates sharp corners, preventing interference between the installation tools and the insulating cap when installing other components. The edge of the insulating cap is fully fitted to the substrate, eliminating gaps that could leak electric fields and ensuring reliable insulation.

[0012] Furthermore, the edge of the insulating cap is bonded to the substrate.

[0013] It can utilize conventional bonding processes for thick film hybrid integration, without the need for additional processes, resulting in low cost and the connection structure being unaffected by sintering.

[0014] Furthermore, the edge of the insulating cap is provided with an adhesive ring, and the bottom surface of the adhesive ring is bonded to the substrate.

[0015] The increased bonding area improves the connection strength between the insulating cap and the substrate, resulting in better reliability.

[0016] Furthermore, the bottom surface of the bonding ring is planar.

[0017] Compared to three-dimensional shapes such as conical surfaces, planar shapes are easier to couple and bond with planar substrates, leaving no gaps and ensuring reliable insulation.

[0018] Furthermore, the through groove is elongated, with one end extending to the top of the insulating cap and the other end extending to the edge of the insulating cap.

[0019] It is convenient to put bonding wires, solder, etc. through the through slot, making installation easy; at the same time, the long through slot only cuts a part of the solid body on one side of the insulating cap, and most of the area around the insulating cap is still free of the through slot, which can be used to arrange components around the high voltage chip, bonding wires of other components, etc., resulting in high utilization of substrate space.

[0020] Furthermore, the inner wall of one end of the through groove is arc-shaped.

[0021] The process is convenient and avoids the sharp corners on the inner wall of the through groove from rubbing against the bonding wire, thus improving the reliability of the bonding wire.

[0022] Furthermore, the other end of the through groove is directly opposite the edge of the substrate that is closest to the insulating cap.

[0023] The electric field leaking from the insulating cap is directed outward from the substrate, minimizing its impact on the space on the substrate and improving the utilization rate of the substrate space.

[0024] Furthermore, the insulating cap is made of ceramic.

[0025] Ceramic provides excellent insulation and can be customized with different thicknesses to meet varying voltage requirements; it also boasts strong bonding strength and high reliability; and it does not release water, gas, or other substances, thus causing no pollution to the circuit.

[0026] This utility model also provides a thick-film hybrid integrated circuit, including an integrated circuit body, on which the above-mentioned high-voltage chip insulation structure is provided.

[0027] This avoids the possibility of high-voltage chips and surrounding components colliding and sparking during operation, thus improving product quality; the installation sequence of the insulating caps has little impact on the manufacturing process of hybrid integrated circuits, resulting in high production efficiency. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of this utility model.

[0029] Figure 2 This is a front view of the present invention.

[0030] Figure 3 This is a side view of the present invention.

[0031] Figure 4 This is a schematic diagram of the insulating cap.

[0032] In the accompanying drawings, the technical features represented by each reference numeral are as follows:

[0033] 1-Substrate; 2-Insulating cap; 3-High voltage chip; 4-Through groove; 5-Bonding wire; 6-Adhesive ring; 7-Component. Detailed Implementation

[0034] The principles and features of this utility model are described below with reference to the accompanying drawings. The examples given are only for explaining this utility model and are not intended to limit the scope of this utility model.

[0035] This utility model refers to Figure 1-4 .

[0036] This utility model provides a high-voltage chip insulation structure, including a substrate 1, on which a bonding wire 5, a high-voltage chip 3 and a high-temperature resistant insulating cap 2 are fixed. The insulating cap 2 and the substrate 1 form an isolation cavity, and the high-voltage chip 3 is located in the isolation cavity. The insulating cap 2 is also provided with a through groove 4, which communicates with the isolation cavity. One end of the bonding wire 5 extends from the through groove 4 into the isolation cavity and is fixedly connected to the high-voltage chip 3.

[0037] principle:

[0038] When the high-voltage chip 3 insulation structure of this invention is used in a hybrid integrated circuit, the substrate 1 is the substrate of the hybrid integrated circuit. The space on the substrate 1 can be used to fabricate thick-film components, assemble semiconductor chips, monolithic integrated circuits, and / or micro-components, etc. The other end of the bonding wire 5 can be used to connect other thick-film components, semiconductor chips, monolithic integrated circuits, or micro-components, realizing the signal connection between the high-voltage chip 3 and other components 7. Since the isolation cavity inside the insulating cap 2 is only connected to the outside through the slot 4, and most of the area around the insulating cap 2 avoids the slot 4, it can be used to arrange the components 7 around the high-voltage chip 3, the bonding wires 5 of other components 7, etc., thus improving the insulation between the high-voltage chip 3 and the surrounding components 7, bonding wires 5, etc.

[0039] By employing this invention, an isolation cavity is formed between the insulating cap 2 and the substrate 1, and the high-voltage chip 3 is disposed within the isolation cavity. This ensures reliable insulation between the high-voltage chip 3 and surrounding components 7, bonding wires 5, etc., preventing discharge and arcing between the high-voltage chip 3 and surrounding components 7 during operation, thus improving product quality. The through slot 4 allows for the placement of bonding wires 5 and solder, facilitating the installation of bonding wires 5 and improving the reliability of the electrical connection between the bonding wires 5 and the high-voltage chip 3. Furthermore, compared to molding compounds, the high-temperature resistance of the insulating cap 2 means its insulation performance is not compromised by the sintering process environment. Therefore, the installation sequence of the insulating cap 2 has minimal impact on the manufacturing process of hybrid integrated circuits, resulting in high production efficiency.

[0040] Furthermore, the insulating cap 2 has a spherical structure, and the edge of the insulating cap 2 is attached and fixed to the substrate 1.

[0041] The spherical structure occupies less space compared to rectangular structures and eliminates sharp corners, avoiding interference between the installation tools and the insulating cap 2 when installing other components 7; the edge of the insulating cap 2 is fully fitted to the substrate 1, eliminating gaps that could leak electric fields and ensuring reliable insulation.

[0042] Furthermore, the edge of the insulating cap 2 is bonded to the substrate 1.

[0043] It can utilize conventional bonding processes for thick film hybrid integration, without the need for additional processes, resulting in low cost and the connection structure being unaffected by sintering.

[0044] Furthermore, the edge of the insulating cap 2 is provided with an adhesive ring 6, and the bottom surface of the adhesive ring 6 is bonded to the substrate 1.

[0045] The increased bonding area improves the connection strength between the insulating cap 2 and the substrate 1, resulting in better reliability.

[0046] Furthermore, the bottom surface of the adhesive ring 6 is planar.

[0047] Compared with three-dimensional shapes such as conical surfaces, using a planar shape makes it easier to couple and bond with the planar substrate 1, leaving no gaps and ensuring reliable insulation.

[0048] Furthermore, the through groove 4 is elongated, with one end extending to the top of the insulating cap 2 and the other end extending to the edge of the insulating cap 2.

[0049] The through slot 4 facilitates the placement of bonding wires 5, solder, etc., making installation convenient. At the same time, the elongated through slot 4 only cuts off a portion of the solid body on one side of the insulating cap 2, leaving a large area around the insulating cap 2 that avoids the through slot 4. This area can be used to arrange components 7 around the high voltage chip 3, bonding wires 5 of other components 7, etc., resulting in high space utilization of the substrate 1.

[0050] Furthermore, the inner wall of one end of the through groove 4 is arc-shaped.

[0051] The process is convenient and avoids the sharp corners on the inner wall of the through groove 4 from rubbing against the bonding wire 5, thus improving the reliability of the bonding wire 5.

[0052] Furthermore, the other end of the through groove 4 is directly opposite the edge of the substrate 1 that is closest to the insulating cap 2.

[0053] The electric field leaked from the insulating cap 2 is directed outward from the substrate 1, minimizing its impact on the space on the substrate 1 and improving the utilization rate of the space on the substrate 1.

[0054] Furthermore, the insulating cap 2 is made of ceramic.

[0055] Ceramic provides excellent insulation and can be customized with different thicknesses to meet varying voltage requirements; it also boasts strong bonding strength and high reliability; and it does not release water, gas, or other substances, thus causing no pollution to the circuit.

[0056] This utility model also provides a thick-film hybrid integrated circuit, including an integrated circuit body, on which the above-mentioned high-voltage chip insulation structure is provided.

[0057] This avoids the situation where the high-voltage chip 3 discharges and sparks with the surrounding components 7 during operation, thus improving product quality; the installation sequence of the insulating cap 2 has little impact on the manufacturing process of hybrid integrated circuits, resulting in high production efficiency.

[0058] In the description of this utility model, it should be understood that if descriptive terms indicating orientation, direction, or positional relationship appear, such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc., the orientation or positional relationship indicated in this specification is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of understanding this utility model and simplifying the description, and does not indicate or imply that the part, element, or whole referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this utility model.

[0059] Furthermore, if sequential descriptive terms such as "first," "second," etc., appear, their purpose in this specification is for ease of understanding or simplification. For example, to distinguish multiple technical features of the same type or function, which must be mentioned separately, this specification may use prefixes or suffixes to differentiate them. Therefore, they should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined with "first," "second," etc., may explicitly or implicitly include at least one of those features. In the description of this utility model, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0060] In this utility model, if descriptive terms describing structural relationships are used, such as "installation," "connection," "joining," and "fixing," they should be interpreted broadly unless otherwise explicitly specified and limited. For example, "installation," "connection," and "joining" can refer to a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium; it can refer to the internal communication of two components or the interaction between two components. "Fixing" can refer to an integral fixation or a detachable fixation using fasteners; it can be a direct fixation or a fixation through an intermediate medium. For those skilled in the art, the specific meaning of the above descriptive terms in this utility model can be understood based on the specific circumstances, the context, and the coherence of the preceding and following text.

[0061] In this utility model, if descriptive terms containing subordinate or connecting meanings appear, such as "above" or "below" the second feature, they should not be interpreted restrictively unless otherwise explicitly specified and limited. For example, "above" or "below" can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. For those skilled in the art, the specific meaning of the above descriptive terms in this utility model can be understood according to the specific circumstances, the context, and the coherence of the preceding and following text.

[0062] Furthermore, "above," "on top of," and "above" the first feature in relation to the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "under," and "below" the first feature in relation to the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0063] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments, examples, and features described in this specification, and such combinations or integrations should all fall within the scope of the present invention.

[0064] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Variations, modifications, substitutions, and modifications made by those skilled in the art to the above embodiments within the scope of information available through public channels and in conjunction with the technical teachings given in this application are still covered within the protection scope of this application.

Claims

1. A high-voltage chip insulation structure, characterized in that: The device includes a substrate (1), on which a bonding wire (5), a high-voltage chip (3) and a high-temperature resistant insulating cap (2) are fixed. The insulating cap (2) and the substrate (1) form an isolation cavity, and the high-voltage chip (3) is located in the isolation cavity. The insulating cap (2) is also provided with a through groove (4), which communicates with the isolation cavity. One end of the bonding wire (5) extends from the through groove (4) into the isolation cavity and is fixedly connected to the high-voltage chip (3).

2. The high-voltage chip insulation structure according to claim 1, characterized in that: The insulating cap (2) has a spherical structure, and the edge of the insulating cap (2) is attached and fixed to the substrate (1).

3. The high-voltage chip insulation structure according to claim 2, characterized in that: The edge of the insulating cap (2) is bonded to the substrate (1).

4. The high-voltage chip insulation structure according to claim 3, characterized in that: The edge of the insulating cap (2) is also provided with an adhesive ring (6), and the bottom surface of the adhesive ring (6) is bonded to the substrate (1).

5. The high-voltage chip insulation structure according to claim 4, characterized in that: The bottom surface of the bonding ring (6) is planar.

6. The high-voltage chip insulation structure according to claim 2, characterized in that: The through groove (4) is elongated, with one end extending to the top of the insulating cap (2) and the other end extending to the edge of the insulating cap (2).

7. The high-voltage chip insulation structure according to claim 6, characterized in that: The inner wall of one end of the through groove (4) is arc-shaped.

8. The high-voltage chip insulation structure according to claim 6, characterized in that: The other end of the through groove (4) is directly opposite the edge of the substrate (1) that is closest to the insulating cap (2).

9. The high-voltage chip insulation structure according to any one of claims 1-8, characterized in that: The insulating cap (2) is made of ceramic.

10. A thick-film hybrid integrated circuit, comprising an integrated circuit body, characterized in that: The integrated circuit body is provided with the high-voltage chip insulation structure as described in any one of claims 1-9.

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