A planar probe test structure
By using a planar probe made of a graphite and metal mixture, the problems of chip surface contamination and high-temperature damage caused by existing probes in the testing of third-generation semiconductor materials have been solved, achieving stability and efficiency in high-current testing and improving product quality and yield.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- POWERTECH CO LTD
- Filing Date
- 2025-06-30
- Publication Date
- 2026-06-30
AI Technical Summary
Existing probe structures cannot meet the high-current testing requirements when testing wafers or KGD chips of third-generation semiconductor materials. They are prone to contamination of the chip surface material, resulting in scratches and pin marks, and may cause high-temperature accumulation that damages the chip structure.
The planar probe, made of a mixture of graphite and metal, has a smooth surface, which increases the contact area, reduces pressure, and prevents surface damage. At the same time, the high thermal conductivity and high melting point of graphite ensure test stability and high temperature resistance.
It improves product quality and yield, reduces testing costs, extends probe lifespan, avoids chip surface scratches and high-temperature damage, and meets the testing requirements of high-requirement products such as SiC MOSFET, SiMOSFET, and IGBT.
Smart Images

Figure CN224436406U_ABST