Support device for carrying wafers and thin film deposition apparatus

By setting coaxial first and second protective rings on the carrier stage to shield the wafer edge and introduce protective gas, the problem of uneven wafer deposition thickness was solved, and a more uniform thin film deposition effect was achieved.

CN224450840UActive Publication Date: 2026-07-03SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
Filing Date
2025-07-03
Publication Date
2026-07-03

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Abstract

The application provides a support device for carrying a wafer and a thin film deposition equipment, and relates to the technical field of semiconductor manufacturing. The support device comprises a carrying table for supporting and heating a wafer in a reaction chamber; a connecting shaft, one end of which is connected with the carrying table, and the other end of which is connected with the bottom of the reaction chamber, the connecting shaft supporting the carrying table; and a deposition prevention assembly comprising a first protection ring, a second protection ring and a connecting piece, the first protection ring being arranged on the carrying table and being concentrically arranged with the carrying table, the second protection ring being connected with the carrying table through the connecting piece and being coaxially and spacedly arranged with the second protection ring; when a thin film is deposited on the wafer, the wafer is located between the first protection ring and the second protection ring, the first protection ring is used for shielding the edge of the back surface of the wafer, and the second protection ring is used for shielding the edge of the surface of the wafer. The problem of local airflow difference caused by the protruding position of the traditional deposition prevention ring is solved, the uniformity of the thin film deposited on the edge region close to the surface of the wafer is improved, and the deposition quality of the whole wafer is improved.
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