A multi-zone independent temperature control semiconductor wafer heating disc device

Abstract

The utility model relates to the technical field of semiconductor wafer heating disc device, concretely relates to a kind of semiconductor wafer heating disc device of multi-zone independent temperature control, including heating disc, the top of heating disc is equipped with three groups of heating zone, and the inside of each group of heating zone is equipped with pipe groove, heating pipe is fixed in pipe groove, the top of heating disc is fixed with limit frame, the middle part of limit frame is fixed with the disc structure of the top equipped with inner groove, and disc and limit frame are fixedly connected by spacing plate between, the top of limit frame is fixed with placing tray, when heating pipe heats, it can be segmented by spacing plate, and the heating temperature in this area is determined by temperature sensing component, so heating pipe structure can be heated to specified temperature as required, meet the function of the temperature control of independent area, and the top groove structure equipped on placing tray, can be convenient for user to place wafer structure, and heat transfer is carried out through annular groove therein, meet the function of heating.

Description

Technical Field

[0001] This utility model relates to the technical field of semiconductor wafer heating plate devices, specifically to a semiconductor wafer heating plate device with multi-zone independent temperature control. Background Technology

[0002] In semiconductor manufacturing, wafer heating is a crucial step in key processes such as photolithography, etching, and thin film deposition. Precise temperature control directly affects wafer processing quality and yield. Traditional semiconductor wafer heating pads typically employ a single temperature control zone or a few partitioned temperature control designs, which struggle to meet the diverse temperature distribution requirements of complex processes on the wafer surface.

[0003] On the one hand, as wafer sizes continue to increase and manufacturing processes become increasingly sophisticated, heating pads with single-temperature-controlled areas cannot guarantee temperature uniformity on the wafer surface. During the heating process, significant temperature differences easily arise between the edges and the center, leading to inconsistent chemical reaction rates across the wafer surface. This, in turn, affects the uniformity of thin film growth and the exposure effect of photoresist, causing problems such as pattern transfer errors and uneven film thickness, ultimately reducing the performance and yield of semiconductor devices.

[0004] On the other hand, with the continuous development of semiconductor technology, multiple process steps with different temperature requirements may need to be performed on the same wafer. Existing limited-zone temperature-controlled heating plates, due to their limited number of zones and insufficient temperature control independence, cannot flexibly provide precise temperature control for different areas of the wafer, making it difficult to adapt to complex multi-process requirements. This not only restricts the innovation and development of semiconductor manufacturing processes but also increases the difficulty of process debugging and production costs. Utility Model Content

[0005] Technical problems to be solved

[0006] In view of the above-mentioned shortcomings of the existing technology, the present invention provides a semiconductor wafer heating plate device with independent temperature control in multiple zones, which can effectively solve the problems in the existing technology.

[0007] Technical solution

[0008] To achieve the above objectives, this utility model provides the following technical solution:

[0009] This utility model provides a semiconductor wafer heating plate device with multi-zone independent temperature control, including a heating plate. The top of the heating plate has three sets of heating zones, and each set of heating zones has a tube groove inside. A heating tube is fixed in the tube groove. A limiting frame is fixed at the top of the heating plate. A disc structure with an inner groove at the top is fixed in the middle of the limiting frame. The disc and the limiting frame are fixedly connected by a spacer plate. A placement plate is fixed at the top of the limiting frame.

[0010] Furthermore, a locking block is fixed to the inner center of the placement tray, and the locking block is locked in the inner groove.

[0011] Furthermore, three sets of spacers are fixed in an equidistant array within the limiting frame, and the spacers are located at the top of the spacer portion of the heating zone.

[0012] Furthermore, each set of the tube grooves and heating tubes is W-shaped and connected end to end, and the electrical structure of the heating plate is electrically connected to the heating tubes, and a top groove is opened from the top of the placement plate to the bottom.

[0013] Furthermore, the center of the placement tray has multiple sets of annular groove structures.

[0014] Furthermore, a temperature sensing component is fixed on the inner sidewall of the middle part of the limiting frame, and one end of the temperature sensing component is electrically connected to an external control device.

[0015] Beneficial effects

[0016] The technical solution provided by this utility model has the following advantages compared with the known public technology:

[0017] This invention utilizes a heating plate-limiting frame-placement plate connection structure. The user first assembles the device. The heating plate structure houses the heating element within a groove, electrically connecting it to the heating plate's electrical components. The partition plate structure within the heating plate and limiting frame allows for division during heating, and the temperature of each area is measured by a temperature sensing component. Therefore, the heating element structure can be heated to a specified temperature, fulfilling the function of independent area temperature control. The top groove structure on the placement plate facilitates the placement of the wafer structure, with heat transfer through its annular groove, fulfilling the heating function.

[0018] In this device, the placement tray needs to be assembled with the wafer. The internal locking block of the placement tray is assembled with the inner groove, so the user can assemble and fix the placement tray and wafer structure as a whole with the heating plate and the limiting frame. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1This is a schematic diagram of the structure of this utility model;

[0021] Figure 2 This is a top view of the present invention;

[0022] Figure 3 This is one of the structural exploded views of this utility model;

[0023] Figure 4 This is the second structural exploded view of this utility model.

[0024] The labels in the diagram represent: 1. Heating plate; 11. Heating zone; 12. Tube groove; 2. Limiting frame; 21. Partition plate; 22. Inner groove; 23. Temperature sensing component; 3. Heating tube; 4. Placement plate; 41. Top groove; 42. Locking block. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without creative effort are within the scope of protection of this utility model.

[0026] The present invention will be further described below with reference to the embodiments.

[0027] Example: A semiconductor wafer heating plate device with multi-zone independent temperature control, as shown in the attached figure. Figure 1 - Appendix Figure 4 The heating plate 1 includes a heating plate 1, which has three heating zones 11 at its top. Each heating zone 11 has a tube groove 12 inside, and a heating tube 3 is fixed inside the tube groove 12. A limiting frame 2 is fixed at the top of the heating plate 1. A disc structure with an inner groove 22 at the top is fixed in the middle of the limiting frame 2. The disc and the limiting frame 2 are fixedly connected by a partition plate 21. A placement plate 4 is fixed at the top of the limiting frame 2.

[0028] A locking block 42 is fixed to the inner center of the placement tray 4, and the locking block 42 is fixed in the inner groove 22. Through the structural connection of the heating tray 1-limiting frame 2-placement tray 4, the user first continues to assemble the above equipment. In the structure of the heating tray 1, the heating tube 3 can be placed in the tube groove 12 and electrically connected with the heating tube 3 through the electrical structure on the heating tray 1. Due to the partition plate 21 structure set in the heating tray 1 and the limiting frame 2, when the heating tube 3 is heating, it can be divided by the partition plate 21, and the heating temperature of the area can be measured by the temperature sensing component 23. Therefore, the heating tube 3 structure can be heated to the specified temperature as needed to meet the temperature control function of the independent area. The top groove 41 structure opened on the placement tray 4 can facilitate the user to place the wafer structure, and heat is transferred through the annular groove therein to meet the heating function.

[0029] The spacer plates 21 are fixed in three sets at equal intervals within the limiting frame 2, and the spacer plates 21 are located at the top of the interval portion of the heating zone 11; each set of the tube groove 12 and the heating tube 3 are "W" shaped and connected end to end, and the electrical structure of the heating plate 1 is electrically connected to the heating tube 3. The top of the placement plate 4 has a top groove 41 extending to the bottom; the middle of the placement plate 4 has multiple sets of annular groove structures; a temperature sensing component 23 is fixed on the inner side wall of the middle part of the limiting frame 2, and one end of the temperature sensing component 23 is electrically connected to the external control device; in this device, since the placement plate 4 needs to be assembled with the wafer, the locking block 42 set inside the placement plate 4 is assembled with the inner groove 22, so the user can assemble and fix the placement plate 4 and the wafer structure as a whole with the heating plate 1 and the limiting frame 2.

[0030] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions will not cause the essence of the corresponding technical solutions to deviate from the protection scope of the technical solutions of the embodiments of this utility model.

Claims

1. A multi-zone independently temperature-controlled semiconductor wafer heating platen apparatus, characterized by, The heating plate (1) includes a heating plate (1) with three heating zones (11) at the top. Each heating zone (11) has a tube groove (12) inside. A heating tube (3) is fixed inside the tube groove (12). A limiting frame (2) is fixed at the top of the heating plate (1). A disc structure with an inner groove (22) at the top is fixed in the middle of the limiting frame (2). The disc and the limiting frame (2) are fixedly connected by a partition plate (21). A placement plate (4) is fixed at the top of the limiting frame (2).

2. The multi-zone independently temperature-controlled semiconductor wafer heating disc device according to claim 1, wherein, A locking block (42) is fixed in the middle of the inner side of the placement tray (4), and the locking block (42) is locked in the inner groove (22).

3. The multi-zone independently temperature-controlled semiconductor wafer heating disc device according to claim 1, wherein, The spacer plate (21) is fixed in three sets at equal intervals within the limiting frame (2), and the spacer plate (21) is located at the top of the spacer portion of the heating zone (11).

4. The multi-zone independently temperature-controlled semiconductor wafer heating disc device of claim 1, wherein, Each set of the tube groove (12) and heating tube (3) is "W" shaped and connected end to end. The electrical structure of the heating plate (1) is electrically connected to the heating tube (3). The top of the placement plate (4) is provided with a top groove (41) from top to bottom.

5. The multi-zone independently temperature-controlled semiconductor wafer heating disc device according to claim 4, wherein, The middle of the placement plate (4) has multiple sets of annular groove structures.

6. The multi-zone independently temperature-controlled semiconductor wafer heating disc device of claim 1, wherein, A temperature sensing component (23) is fixed on the inner side wall of the middle part of the limiting frame (2), and one end of the temperature sensing component (23) is electrically connected to an external control device.

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