Polysilicon high boiling treatment reaction kettle gas distributor and reaction kettle

Abstract

The utility model discloses a polycrystal silicon high boiling treatment device field's polycrystal silicon high boiling treatment reation kettle gas distributor and reation kettle, including with HCL pipeline connection's base and set up in the vertical pipe of reation kettle, the reation kettle is equipped with high boiling matter, through HCL pipeline to reation kettle in -transport HCL, the vertical pipe with base is connected through detachable mode, the vertical pipe side wall is equipped with a plurality of air holes, the air hole is used for the HCL of transportation to enter the reation kettle in the form of bubbling. The utility model discloses through setting up the air hole on the vertical pipe, and the HCL of input reation kettle enters in the form of bubbling through the air hole, and the HCL that enters in the form of bubbling reacts more gently with the high boiling matter in the reation kettle, thereby avoiding the material that the reaction produces acts on the sealing assembly of reation kettle, the utility model discloses simple structure, and convenient dismouting maintenance.

Description

Technical Field

[0001] This utility model relates to the field of polycrystalline silicon high boiling point treatment equipment, and in particular to a gas distributor and a reaction vessel for polycrystalline silicon high boiling point treatment reactor. Background Technology

[0002] During the production of polysilicon, a certain amount of high-boiling-point substances (polychlorosilanes) are produced as byproducts. The main components are tetrachlorosilane, pentachlorosilane, and hexachlorosilane. In existing technologies, these high-boiling-point substances are cracked by stirring in a reactor and using hydrogen chloride as the cracking gas. The resulting trichlorosilane and silicon tetrachloride can be reused as raw materials for polysilicon production.

[0003] Using a stirrer to stir the internal structure is complicated, and during the stirring process, a large amount of chlorosilane will act on the sealing components of the reactor. The corrosiveness and erosion of chlorosilane cause the distributor to fail. Utility Model Content

[0004] The purpose of this invention is to provide a gas distributor and reactor for a polycrystalline silicon high-boiling treatment reactor. By setting vent holes on the vertical pipe, HCl enters the reactor in a bubbling manner for reaction. The structure is simple and easy to assemble and disassemble.

[0005] To solve the above technical problems, the following technical solution is adopted:

[0006] This utility model provides a gas distributor for a polycrystalline silicon high-boiling-point treatment reactor, including a base connected to an HCl pipe and a vertical pipe disposed inside the reactor. The reactor contains a high-boiling-point substance, and HCl is transported into the reactor through the HCl pipe. The vertical pipe is detachably connected to the base, and the side wall of the vertical pipe is provided with several air holes. The HCl transported through the air holes enters the reactor in a bubbling manner.

[0007] Optionally, the vertical pipe is provided with several layers of air holes.

[0008] Optionally, some of the pores are arranged in a three- to six-eighths-division manner on the circumference of each layer.

[0009] Optionally, the base includes a through pipe, a first flange, and a second flange; one end of the through pipe is connected to the vertical pipe and is disposed inside the reactor; the other end is connected to the HCl pipe through the first flange, and the through pipe is fitted with a second flange, which is connected to the bottom of the reactor.

[0010] Optionally, the outer wall of the end of the connecting pipe that extends into the reactor is provided with an external thread, and the inner wall of the end of the vertical pipe is provided with an internal thread that mates with the external thread on the connecting pipe, so as to realize the detachable connection between the vertical pipe and the connecting pipe.

[0011] Optionally, the inner wall of the conduit and the external threads are sintered with enamel.

[0012] Optionally, the vertical tube is sintered mainly from graphite, with graphite accounting for more than 70% of the mass.

[0013] Optionally, the diameter of the pores ranges from 1 to 15 mm.

[0014] Secondly, this utility model provides a reaction vessel, including the gas distributor for the polycrystalline silicon high-boiling treatment reaction vessel described in the first aspect, wherein there are three to ten bases and vertical pipes, each base is connected to one vertical pipe, and the vertical pipes are evenly arranged inside the reaction vessel.

[0015] Compared with the prior art, the beneficial effects achieved by this utility model are as follows:

[0016] 1. This utility model provides an air hole on the vertical pipe, allowing HCl to enter the reactor in a bubbling manner. The bubbling HCl reacts more gently with the high-boiling substances inside the reactor, thus preventing the reaction products from acting on the sealing components of the reactor. This utility model has a simple structure and is easy to disassemble and maintain.

[0017] 2. The vertical tube of this utility model is mainly made of graphite, which has good rigidity and hardness and will not be damaged by corrosion or erosion caused by substances generated inside. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of the gas distributor for the polycrystalline silicon high-boiling treatment reactor provided by this utility model;

[0019] Figure 2 This is the utility model Figure 1 Schematic diagram of the structure at mid-section A;

[0020] Figure 3 This is a schematic diagram of the cross-sectional structure of the vertical tube in an embodiment of this utility model;

[0021] Figure 4 This is the utility model Figure 3 Schematic diagram of the mid-section B section structure;

[0022] Figure 5 This is a schematic diagram of the base structure in an embodiment of this utility model.

[0023] Explanation of reference numerals in the attached figures:

[0024] 1. Reactor; 11. High-boiling-point channel; 12. Discharge channel; 2. Vertical pipe; 21. Vent; 22. Internal thread; 3. Base; 31. Through pipe; 32. First flange; 33. Second flange; 34. External thread. Detailed Implementation

[0025] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the present invention or its application or use.

[0026] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more. In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0027] Example 1

[0028] like Figure 1 , Figure 3 As shown, this embodiment provides a gas distributor for a polycrystalline silicon high-boiling-point treatment reactor, including a vertical pipe 2 and a base 3. The base 3 is installed at the bottom of the reactor 1, and the vertical pipe 2 is detachably connected to the base 2 and disposed inside the reactor 1. A high-boiling-point channel 11 is provided on the side of the reactor 1, through which high-boiling-point substances (polychlorosilanes) generated during the polycrystalline silicon production process are input into the reactor 1.

[0029] Several bases 3 are provided at the bottom of the reactor 1. Several through holes are provided at the bottom of the reactor 1 for the bases 3 to extend into the reactor 1. One end of the base 3 extends into the reactor 1 through the through hole and is detachably connected to the vertical pipe 2. The other end of the base 3 is connected to the HCl pipe. Several vents 21 are provided on the vertical pipe 2 for HCl (anhydrous hydrogen chloride) to enter the reactor 1 in a bubbling form. After passing through the bases 3, the HCl enters the vertical pipe 2 and finally enters the reactor 1 in a bubbling form from the vents 21 on the vertical pipe 2 to react with the high-boiling substances.

[0030] The top of the reactor 1 is also equipped with a discharge channel 12, through which substances generated by the reaction of high-boiling substances with HCl (mainly dichlorosilane, trichlorosilane and silicon tetrachloride) and excess HCl are discharged.

[0031] In this embodiment, the vertical tube 2 is provided with an air hole 21. HCl can enter the reactor 1 in a bubbling manner through the air hole 21 without the need for a stirring device, thus reducing power consumption. The structure is simple, and the vertical tube 2 and the base 3 are detachably connected, which is convenient for disassembly and saves on inspection and maintenance costs.

[0032] Example 2

[0033] like Figure 1 , Figure 5 As shown, this embodiment provides a gas distributor for a polycrystalline silicon high-boiling-point treatment reactor based on Embodiment 1. The base 3 includes a through pipe 31, a first flange 32, and a second flange 33. One end of the through pipe 31 extends into the reactor 1 and connects to the vertical pipe 2, while the other end connects to an HCl pipe via the first flange 32. The second flange 33 is also fitted onto the through pipe 31, and the through pipe 31 is connected to the bottom of the reactor 1 via the second flange 33, thereby fixing the through pipe 31 to the bottom of the reactor 1. An external thread 34 is provided on the outer wall of the end of the through pipe 31 that connects to the vertical pipe 2, and an internal thread 22 that mates with the external thread 34 is provided on one end of the vertical pipe 2, realizing a threaded connection between the through pipe 31 and the vertical pipe 2.

[0034] like Figure 3 , Figure 4 As shown, the vertical pipe 2 has several layers of vents 21, each layer including three to six vents 21. These vents 21 are evenly distributed around a circumference of the vertical pipe 2. The upper end of the vertical pipe 2 is closed, and the vents 21 are located above the internal thread 22. HCl entering the vertical pipe 2 can only be discharged through the vents 21. The diameter of the vents 21 ranges from 1 to 15 mm, preferably 3 to 8 mm, to allow HCl to be discharged into the reactor 1 in a bubbling manner. The HCl entering the reactor 1 in a bubbling manner has a certain potential energy, which allows it to react more effectively with the high-boiling substances in the reactor 1.

[0035] like Figure 2As shown, the distributor provided in this embodiment includes three vertical pipes 2, each vertical pipe 2 is connected to a through pipe 31, and each through pipe 31 is connected to an HCl pipe. The vertical pipes 2 located in the reactor 1 are arranged in a triangular pattern.

[0036] In this embodiment, enamel is sintered on the external threads 34 on the inner and outer walls of the through pipe 31 to prevent corrosion of the through pipe 31 and its connection points by hydrogen chloride and wear caused by the scouring of liquid materials, thereby preventing leakage.

[0037] The vertical tube 2 is sintered mainly from graphite, with graphite accounting for more than 70% of the mass. It has excellent rigidity and hardness and will not be damaged by the strong corrosiveness and erosion of chlorosilane, thus preventing the distributor from failing.

[0038] In use, the vertical pipe 2 is threadedly connected to the through pipe 31, and then extended into the reactor 1 through the through hole at the bottom of the reactor 1. The through pipe 31 is then installed at the bottom of the reactor 1 through the second flange 33. The other end of the through pipe 31 is connected to the HCl pipe through the first flange 32. The HCl pipe starts to transport HCl, and the high boiling point channel 11 starts to transport high boiling point. The high boiling point enters the reactor 1, and the HCl enters the through pipe 31 and then enters the vertical pipe 2. Finally, it enters the reactor 1 in the form of bubbles through the vent 21 on the vertical pipe 2, and reacts with the high boiling point in the reactor 1. The substances produced by the reaction are discharged through the discharge channel 12.

[0039] Example 3

[0040] This embodiment provides a reaction vessel based on Embodiment 1. 3-10 bases are provided at the bottom of the reaction vessel, each base is connected to a vertical pipe, and multiple vertical pipes are evenly arranged inside the reaction vessel.

[0041] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A gas distributor for a polycrystalline silicon high-boiling-point treatment reactor, characterized in that, The device includes a base connected to an HCl pipe and a vertical pipe installed inside a reactor containing a high-boiling-point substance. HCl is supplied to the reactor through the HCl pipe. The vertical pipe is detachably connected to the base. The side wall of the vertical pipe has several vent holes, through which HCl is supplied in a bubbling manner into the reactor.

2. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 1, characterized in that, The vertical tube is provided with several layers of air holes.

3. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 2, characterized in that, The aforementioned pores are arranged in a manner of dividing the circumference of each layer into three to six equal parts.

4. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 1, characterized in that, The base includes a through pipe, a first flange, and a second flange; one end of the through pipe is connected to the vertical pipe and is disposed inside the reactor; the other end is connected to the HCl pipe through the first flange, and the through pipe is fitted with a second flange, which is connected to the bottom of the reactor.

5. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 4, characterized in that, The outer wall of the end of the connecting pipe that extends into the reactor is provided with an external thread, and the inner wall of the end of the vertical pipe is provided with an internal thread that mates with the external thread on the connecting pipe, thereby realizing a detachable connection between the vertical pipe and the connecting pipe.

6. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 5, characterized in that, The inner wall and the external threads of the tube are sintered with enamel.

7. The gas distributor for the polycrystalline silicon high-boiling-point treatment reactor according to claim 1, characterized in that, The diameter of the pores ranges from 1 to 15 mm.

8. A reaction vessel, characterized in that, The gas distributor for the polycrystalline silicon high-boiling treatment reactor according to any one of claims 1-7 is provided with three to ten bases and vertical pipes, each base being connected to one vertical pipe, and the vertical pipes being evenly arranged inside the reactor.

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