Chain type gettering coating device and chain type gettering machine

Abstract

The application relates to a chain type gettering coating device and a chain type gettering machine table. On the one hand, a transmission assembly is immersed in the interior of a main groove to obtain a gettering source, and the gettering source is coated on the back surface of a silicon wafer transmitted by the transmission assembly. Compared with the mode in the prior art that a dropper is used to drop the gettering source on the wheel surface of a roller, and the wheel surface of the roller is used to coat the gettering source on the back surface of the silicon wafer, the gettering source is more uniformly distributed on the transmission assembly, so that the gettering source can be more uniformly coated on the back surface of the silicon wafer. On the other hand, compared with the mode that a liquid gettering source is directly coated on the front surface of the silicon wafer, in the application, a spraying part is used to spray the gettering source, so that the gettering source in the form of gas mist is sprayed and coated on the front surface of the silicon wafer. Since the particles of the gettering source in the form of gas mist are small, the influence of surface tension can be ignored, so that the uneven distribution phenomenon caused by surface tension is reduced, and the uniform distribution of the gettering source on the front surface of the whole silicon wafer is ensured.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to a chain-type getter coating device and a chain-type getter machine. Background Technology

[0002] In the silicon wafer manufacturing process, a gettering process is required before texturing and cleaning. In this process, a getter source is first coated onto the silicon wafer surface, and then the wafer with the getter source coating is placed in a high-temperature advance zone for high-temperature gettering. In the high-temperature advance zone, a doped diffusion layer is formed on the silicon wafer surface. Due to the difference in solubility of impurities in the silicon wafer and the diffusion layer, more metal ions such as chromium (Cr), iron (Fe), and copper (Cu) are adsorbed into the diffusion layer. In subsequent processes, such as the texturing and cleaning process, the diffusion layer is removed, along with the harmful ions concentrated in it.

[0003] The methods for coating getter sources in related technologies mainly include tube furnace gettering and chain machine gettering. For chain machine gettering, please refer to [link to relevant documentation]. Figure 1 The commonly used chain-type getter coating device includes a dropper 11, an upper coating roller 12, a silicon wafer 13 to be gettered, a lower coating roller 14, and a transfer roller 15. During operation, the getter source continuously drips from the dropper 11 onto the surface of the rotating upper coating roller 12. When the silicon wafer 13 has not yet been conveyed to the area below the upper coating roller 12, the phosphorus paste on the surface of the upper coating roller 12 reaches saturation. Excess phosphorus paste drips onto the lower coating roller 14 under gravity, at which point both the surfaces of the upper and lower coating rollers 12 are saturated with phosphorus paste. When the silicon wafer 13 is automatically fed and conveyed from left to right to the coating area by the transfer roller 15, the front side of the silicon wafer 13 contacts the upper coating roller 12, and the back side contacts the lower coating roller 14. That is, the silicon wafer 13 makes surface contact with two rollers on its two opposite surfaces. The getter sources on the roller surfaces coat the surface of the silicon wafer 13 under the action of rotation until the silicon wafer 13 is transferred out of the roller contact area, completing the coating process. However, in related technologies, the getter sources are unevenly distributed on the surface of the silicon wafer 13, resulting in poor getter uniformity and affecting the final getter effect and electrical performance. Utility Model Content

[0004] Therefore, it is necessary to overcome the shortcomings of the existing technology and provide a chain-type getter coating device and a chain-type getter machine, which can improve the uniformity of the distribution of getter sources on the silicon wafer surface.

[0005] A chain-type getter coating apparatus, the chain-type getter coating apparatus comprising:

[0006] The main tank is used to install a debris-collecting source;

[0007] A transfer assembly, disposed inside the main tank and immersed in the getter source, is used to transfer a silicon wafer to be gettered, and during the transfer of the silicon wafer, enables the getter source inside the main tank to coat the back side of the silicon wafer; and

[0008] The receiving mechanism is used to install a getter source. The receiving mechanism is provided with a spray section located above the main tank. The getter source inside the receiving mechanism is sprayed outward through the spray section. The getter source sprayed out by the spray section is in the form of aerosol and is coated on the front side of the silicon wafer.

[0009] In one embodiment, the transmission component includes a plurality of rollers arranged sequentially along the longitudinal direction L of the main groove, the rollers being rotatably disposed inside the main groove.

[0010] In one embodiment, the main groove includes two first sidewalls disposed opposite each other along the transmission direction f of the transmission assembly, and a second sidewall connecting the two first sidewalls; the top position of the first sidewall is lower than the top position of the second sidewall, or the top position of the first sidewall and the top position of the second sidewall are at the same horizontal height; the top positions of the two first sidewalls and the top positions of the wheel surfaces of each roller are at the same horizontal height; and / or, the impurity source inside the main groove is completely immersed in each roller.

[0011] In one embodiment, the spray section is configured as a plurality of spray sections, which are arranged sequentially along the longitudinal direction L of the main channel.

[0012] In one embodiment, the chain-type getter coating apparatus further includes a position sensor, a first control switch, and a controller; the position sensor is disposed in the main tank or the receiving mechanism, and the position sensor is used to sense whether there is a silicon wafer on the transmission component; the first control switch is used to control the spray section to open or close; the position sensor and the first control switch are both electrically connected to the controller.

[0013] In one embodiment, the chain-type getter coating apparatus further includes a secondary tank, with the main tank disposed inside the secondary tank, the secondary tank being used to collect getter sources overflowing from the main tank.

[0014] In one embodiment, the chain-type getter coating apparatus further includes a circulation mechanism, through which the sub-tank is connected to the receiving mechanism, the circulation mechanism being used to allow the getter source collected by the sub-tank to flow into the receiving mechanism.

[0015] In one embodiment, the circulation mechanism includes a connecting pipe and a pump body; the secondary tank is connected to the receiving mechanism through the connecting pipe; and the pump body is disposed on the connecting pipe.

[0016] In one embodiment, the circulation mechanism further includes a second control switch disposed on the connecting pipe, the second control switch being used to control the connecting pipe to be open or closed; the chain-type getter coating device further includes a controller, a third control switch, an inlet pipe, a first liquid level sensor, and a second liquid level sensor; the inlet pipe is connected to the main tank, the third control switch is disposed on the inlet pipe, the third control switch being used to control the inlet pipe to be open or closed; the pump body, the second control switch, the third control switch, the first liquid level sensor, and the second liquid level sensor are all electrically connected to the controller; the first liquid level sensor is disposed on the secondary tank, the first liquid level sensor being used to sense whether the liquid level height of the secondary tank has reached a first target value; the second liquid level sensor is disposed on the receiving mechanism, the second liquid level sensor being used to sense whether the liquid level height of the receiving mechanism has reached a second target value.

[0017] A chain-type vacuum cleaner, the chain-type vacuum cleaner including the aforementioned chain-type vacuum coating device.

[0018] The aforementioned chain-type getter coating apparatus and chain-type getter machine, on the one hand, have a transfer component immersed in the main tank to obtain a getter source, and coat the getter source onto the back side of the silicon wafer it is transferring. Compared to the related technology of dripping the getter source onto the roller surface through a dropper and then coating the back side of the silicon wafer with the getter source through the roller surface, the distribution of the getter source on the transfer component is more uniform, thus enabling a more uniform coating of the getter source onto the back side of the silicon wafer. On the other hand, compared to directly coating the liquid getter source onto the front side of the silicon wafer, this application uses a spray section to spray the getter source, so that the aerosol getter source is sprayed and coated onto the front side of the silicon wafer. Because the aerosol getter source has small particles, the influence of surface tension is almost negligible, thereby reducing the uneven distribution caused by surface tension. When coated in this state, these tiny particles can diffuse rapidly on the front side of the silicon wafer like gas molecules. They have a certain degree of fluidity and deformability, and can easily adapt to the microscopic undulations and irregular shapes of the silicon wafer surface, filling every corner and gap of the silicon wafer surface, thus ensuring a uniform distribution across the entire front side of the silicon wafer. Attached Figure Description

[0019] Figure 1 This is a structural diagram of a chain-type getter coating device in related technologies.

[0020] Figure 2This is a structural diagram of a chain-type getter coating apparatus according to an embodiment of this application.

[0021] 11. Dropper; 12. Upper coating roller; 13. Silicon wafer; 14. Lower coating roller; 15. Transfer roller;

[0022] 21. Main tank; 211. First sidewall; 22. Transfer assembly; 221. Roller; 23. Receiving mechanism; 231. Spray section; 24. Silicon wafer; 25. Secondary tank; 26. Circulation mechanism; 261. Connecting pipe; 262. Pump body; 263. Second control switch; 27. Third control switch; 28. Liquid inlet pipe. Detailed Implementation

[0023] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0024] Impurities such as Cr, Fe, and Cu can be removed from the active region of the silicon wafer (i.e., the region that generates photogenerated carriers) or fixed in a region that has a smaller impact on battery performance through gettering.

[0025] It should be noted that the getter source in this embodiment includes, but is not limited to, gettering agents composed of phosphorus (P), boron (B), transition metals, etc. For ease of description and understanding of this application, this embodiment will specifically use phosphorus paste as the getter source, but it is not limited thereto.

[0026] For example, using phosphorus getter technology, phosphorus atoms can interact with metallic impurities during diffusion, driving them to the back side of the silicon wafer or outside the junction region, thereby reducing the number of recombination centers in the active region. For heterojunction (HJT) cells, the quality of the heterojunction interface (such as the amorphous silicon / crystalline silicon interface) is crucial to cell performance. Impurity accumulation at the interface forms interface states, which hinder carrier transport at the heterojunction interface. Getter technology can clean impurities at the heterojunction interface, reducing the interface state density. By removing metallic impurities at the interface through phosphorus getter technology, the scattering and recombination effects on carriers during transport from crystalline silicon to amorphous silicon or vice versa are reduced, thereby improving the carrier transport efficiency at the heterojunction interface, helping to increase the cell's fill factor, and ultimately improving the cell's conversion efficiency.

[0027] In chain gettering, the uniformity of the phosphorus slurry directly affects the uniformity of phosphorus atom diffusion on the silicon wafer surface. If the phosphorus slurry is uniform, phosphorus atoms can diffuse into the silicon wafer at a relatively consistent concentration and rate, resulting in a relatively uniform getter depth across the entire wafer surface. For example, under ideal uniform phosphorus slurry conditions, the depth difference of the getter layer formed by phosphorus atom diffusion is small, effectively removing impurities from different locations within the silicon wafer and improving the overall quality of the wafer. Conversely, if the phosphorus slurry is uneven, the diffusion depth of phosphorus atoms in some areas may be too shallow, potentially failing to completely remove impurities in those areas. A uniform phosphorus slurry ensures that all parts of the silicon wafer receive sufficient phosphorus atoms to interact with impurities, achieving comprehensive impurity removal. For harmful impurities such as metallic impurities (e.g., Cr, Fe, Cu), uniformly distributed phosphorus atoms can effectively remove them throughout the entire silicon wafer by forming phosphorus-impurity complexes or driving impurities to inactive regions of the wafer. If the phosphorus slurry is uneven, there will be areas where impurities are not completely removed; these areas will still act as carrier recombination centers, reducing battery performance.

[0028] As described in the background section, existing technologies suffer from uneven distribution of getter sources on the silicon wafer surface. The inventors discovered that this problem arises because the getter sources are applied to the silicon wafer surface by gravity-fed dripping onto a roller and then coated using the roller's rotation. This method makes it difficult to precisely control the distribution of the getter sources on the wafer surface. The uneven distribution of the getter sources dripped from the dropper on the roller surface leads to uneven distribution of getter sources coated onto the silicon wafer surface. Furthermore, the coating method is a line-to-surface contact method, resulting in poor coating uniformity and consequently, poor getter uniformity, affecting the final getter performance and electrical properties.

[0029] For the reasons mentioned above, this application provides a chain-type getter coating device and a chain-type getter machine, which can improve the uniformity of the distribution of getter sources on the silicon wafer surface.

[0030] See Figure 2 , Figure 1 This diagram illustrates the structure of a chain-type getter coating apparatus according to an embodiment of this application. The chain-type getter coating apparatus includes a main tank 21, a transfer assembly 22, and a receiving mechanism 23. The main tank 21 is used to mount a getter source. The transfer assembly 22 is disposed inside the main tank 21 and immersed in the getter source. The transfer assembly 22 is used to transfer a silicon wafer 24 to be gettered, and during the transfer of the silicon wafer 24, it enables the getter source inside the main tank 21 to coat the back side of the silicon wafer 24.

[0031] Optionally, the receiving mechanism 23 may include, but is not limited to, a box or container, etc., as long as it can be used to install a getter source. In this embodiment, the receiving mechanism 23 is provided with a spray section 231. The spray section 231 is located above the main tank 21. The getter source inside the receiving mechanism 23 is sprayed outward through the spray section 231, and the getter source sprayed out by the spray section 231 is in the form of aerosol and coated on the front side of the silicon wafer 24.

[0032] It should be noted that in this embodiment, the front and back sides of the silicon wafer 24 are referenced to its orientation during transport on the conveying assembly 22, for example, see Appendix. Figure 2 The arrangement of the silicon wafer 24 on the conveying assembly 22 is shown in the diagram. The back side of the silicon wafer 24 refers to the side of the silicon wafer 24 facing the ground; the front side of the silicon wafer 24 refers to the other side of the silicon wafer 24, that is, the side facing away from the ground.

[0033] It should be noted that the materials of the impurity source inside the main tank 21 and the impurity source inside the receiving mechanism 23 are the same, including but not limited to phospholipid paste or other materials, which are not specified here.

[0034] The aforementioned chain-type getter coating apparatus, on the one hand, uses a transfer component 22 immersed in the main tank 21 to acquire a getter source, which is then coated onto the back side of the silicon wafer 24 being transferred. Compared to related technologies where the getter source is dropped onto the surface of a roller 221 using a dropper and then coated onto the back side of the silicon wafer 24 by the roller 221, the getter source is more evenly distributed on the transfer component 22, resulting in a more uniform coating onto the back side of the silicon wafer 24. On the other hand, compared to directly coating the liquid getter source onto the front side of the silicon wafer 24, this application uses a spray section 231 to spray the getter source, resulting in an aerosol-like getter source being sprayed and coated onto the front side of the silicon wafer 24. Because the aerosol-like getter source has small particles, the influence of surface tension is almost negligible, thereby reducing uneven distribution caused by surface tension. When the getter source is coated onto the front side of the silicon wafer 24 in the form of aerosol, these tiny particles can diffuse rapidly on the front side of the silicon wafer 24 like gas molecules. They have a certain degree of fluidity and deformability, and can easily adapt to the micro-undulations and irregular shapes of the surface of the silicon wafer 24, filling the corners and gaps of the surface of the silicon wafer 24, thereby ensuring a uniform distribution on the entire front side of the silicon wafer 24.

[0035] It should be noted that the transmission component 22 in this embodiment includes, but is not limited to, various types of transmission structures such as rollers 221, transmission chains, or transmission belts, as long as they can drive the silicon wafer 24 to move along the main groove 21 and coat the back of the silicon wafer 24 with the getter source. Specifically, the transmission component 22 preferably includes rollers 221, which drive the silicon wafer 24 to move from one side of the main groove 21 to the other. In addition, the rollers 221 have getter sources evenly distributed on their surfaces, which can coat the back of the silicon wafer 24 with the getter source during the transmission process.

[0036] For example, the transfer assembly 22 includes a plurality of rollers 221 arranged sequentially along the longitudinal direction L of the main groove 21, and the rollers 221 are rotatably disposed inside the main groove 21. With this configuration, when the silicon wafer 24 to be gettered is transferred through the transfer assembly 22 along the longitudinal direction L of the main groove 21, it passes through the plurality of rollers 221 in sequence, and the back side of the silicon wafer 24 contacts the getter source, so that the getter source can be uniformly coated onto the back side of the silicon wafer 24.

[0037] For example, at least one of the multiple rollers 221 is configured as a drive roller. The transmission assembly 22 may also include a rotation mechanism, such as a motor, connected to the drive roller to drive its rotation. With this configuration, when the drive roller acts on the silicon wafer 24, it can provide power to the silicon wafer 24 along the longitudinal direction L.

[0038] Specifically, all rollers 221 are configured as driving wheels. When each driving wheel operates, it can rotate at the same speed, thereby driving the silicon wafer 24 to move along the longitudinal direction L inside the main groove 21. Of course, among all rollers 221, one, two, or three can be configured as driving wheels, while the remaining rollers 221 do not need to be configured as driving wheels, that is, they can be configured as driven wheels. When the silicon wafer 24 passes over the driven wheels, the driven wheels provide support for the silicon wafer 24 and rotate adaptively with the movement of the silicon wafer 24.

[0039] In some embodiments, during the transfer process by the transfer assembly 22, the back side of the silicon wafer 24 can be completely immersed in the getter source of the main groove 21, which allows the getter source to be uniformly coated on the back side of the silicon wafer 24. Especially when the transfer assembly 22 uses multiple rollers 221, the roller surfaces of the rollers 221 press against the back side of the silicon wafer 24 as the rollers rotate, which helps to uniformly coat the back side of the silicon wafer 24 with the getter source.

[0040] Of course, when the transmission component 22 uses multiple rollers 221 for transmission, the back side of the silicon wafer 24 does not need to be immersed in the getter source of the main tank 21. In other words, the back side of the silicon wafer 24 is positioned above the liquid surface of the main tank 21. Since the rollers 221 are immersed in the getter source of the main tank 21, the getter source is distributed relatively evenly on the surface of the rollers 221. The getter source on the surface of the rollers 221 can be simultaneously coated onto the back side of the silicon wafer 24 during the process of contacting the back side of the silicon wafer 24.

[0041] For example, the main channel 21 includes two first sidewalls 211 disposed opposite to each other along the transmission direction f of the transmission assembly 22, and a second sidewall (not shown in the figure) connecting the two first sidewalls 211. There may be two second sidewalls, with one of the same sides of the two first sidewalls 211 connected by one second sidewall, and the other of the same sides of the two first sidewalls 211 connected by the other second sidewall.

[0042] Specifically, the top of the first sidewall 211 can be lower than the top of the second sidewall, so that when the impurity source inside the main tank 21 is full, the liquid level of the impurity source is level with the top of the first sidewall 211. Of course, the top of the first sidewall 211 can also be at the same level as the top of the second sidewall, which means that the tops of the four sidewalls of the main tank 21 are at the same level.

[0043] Furthermore, the top positions of the two first sidewalls 211 and the top positions of the wheel surfaces of each roller 221 are at the same horizontal height. With this configuration, the silicon wafer 24 can smoothly move over one of the first sidewalls 211 to the wheel surface of the roller 221 and be supported by the roller 221 during the process of entering and exiting the main slot 21, and can smoothly move over the other first sidewall 211 to the outside of the main slot 21 without interfering with the first sidewalls 211 of the main slot 21.

[0044] Specifically, the top positions of the four side walls of the main groove 21 are all at the same horizontal level. The top position of the wheel surface of each roller 221 is flush with the top position of the four side walls of the main groove 21.

[0045] Based on the aforementioned embodiment, the main groove 21 is filled with getter sources. The getter sources inside the main groove 21 completely immerse each roller 221. In this way, as the silicon wafer 24 is transported from front to back through each roller 221, the getter sources can completely immerse the back side of the silicon wafer 24. In other words, 100% of the back side area of ​​the silicon wafer 24 is in contact with the getter sources in the main groove 21. Under the forward action of the rollers 221, it is beneficial to achieve a more uniform coating of the getter sources onto the back side of the silicon wafer 24.

[0046] Therefore, in this example, the coating method of immersing the back side of the silicon wafer 24 in the getter source inside the main tank 21 and spraying the front side of the silicon wafer 24 with a mist-like getter source makes the getter source coating on both sides of the silicon wafer 24 more uniform and improves the getter uniformity.

[0047] Of course, in some alternative solutions, the top of the roller 221 can be lower than the opening of the main groove 21, without needing to be flush with the opening of the main groove 21 as in the above embodiment. In actual operation, since the top of the roller 221 is lower than the opening of the main groove 21, by adjusting and controlling the height of the getter liquid level inside the main groove 21, each roller 221 can be completely immersed. In this way, during the transfer of the silicon wafer 24 through the roller 221, the getter inside the main groove 21 can also immerse the back side of the silicon wafer 24.

[0048] For example, the spray unit 231 may include, but is not limited to, a nozzle, a spray pipe, a spray nozzle or a spray hole, etc.

[0049] For example, multiple spray sections 231 are configured, and these multiple spray sections 231 are arranged sequentially along the longitudinal direction L of the main groove 21. This configuration, by increasing the number of spray sections 231, increases the spray area of ​​the getter source, allowing more area of ​​the front side of the silicon wafer 24 to be coated with the getter source. Furthermore, as the silicon wafer 24 moves along the longitudinal direction L of the main groove 21, the getter source can be sprayed onto the front side of the silicon wafer 24 through each spray section 231, resulting in higher coating uniformity on the front side of the silicon wafer 24.

[0050] Based on the aforementioned embodiment, the multiple spray sections 231 are arranged sequentially not only along the longitudinal direction L of the main groove 21, but also along the width direction of the main groove 21. In other words, the multiple spray sections 231 are arranged in an array at the bottom of the receiving mechanism 23. Thus, as the silicon wafer 24 passes through the main groove 21, a larger area of ​​the front surface of the silicon wafer 24 is directly above the spray section 231, thereby achieving uniform coating of the getter source on the front surface of the silicon wafer 24.

[0051] The width direction of the main groove 21 refers to the direction perpendicular to its longitudinal direction and parallel to the surface of the silicon wafer 24; in other words, the width direction of the main groove 21 refers to the direction along which the main groove 21 is arranged as follows: Figure 2 The orientation shown is perpendicular to the screen.

[0052] Taking the arrangement of multiple spray sections 231 in a rectangular array at the bottom of the receiving mechanism 23 as a specific example, during the process of the silicon wafer 24 running in the main tank 21, the number of rows of the spray sections 231 directly above the front of each silicon wafer 24 along the longitudinal direction L is not limited to 3, 4, 5, 6, 8, 20 or more, and the number of columns along the width direction is not limited to 2, 3, 4, 5, 6, 8, 10 or more.

[0053] In some embodiments, the chain-type getter coating apparatus further includes a position sensor (not shown), a first control switch (not shown), and a controller. The position sensor is disposed in the main tank 21 or the receiving mechanism 23, and is used to sense whether there is a silicon wafer 24 on the transmission assembly 22. The first control switch is used to control the spray section 231 to open or close, and both the position sensor and the first control switch are electrically connected to the controller. Thus, when the silicon wafer 24 enters the main tank 21 and is transported by the transfer assembly 22, the position sensor can sense that there is a silicon wafer 24 on the transfer assembly 22 and generate a first sensing signal, which is transmitted to the controller. The controller controls the first control switch to open the spray section 231 according to the first sensing signal. The spray section 231 is located, for example, at the bottom of the receiving mechanism 23. The getter is sprayed out through the spray section 231 under its own gravity. The sprayed getter is in the form of aerosol and can be evenly coated on the front side of the silicon wafer 24. Conversely, when the silicon wafer 24 leaves the main tank 21, the position sensor can sense that there is no silicon wafer 24 on the transfer assembly 22 and generate a second sensing signal, which is transmitted to the controller. The controller controls the first control switch to close the spray section 231 according to the second sensing signal, thus completing the coating work.

[0054] During the coating of the silicon wafer 24 with a getter source, the getter source is continuously added to the main tank 21 until the liquid level of the getter source inside the main tank 21 is flush with the opening of the main tank 21. This ensures that the back side of the silicon wafer 24 is submerged, resulting in better coating uniformity on the back side of the silicon wafer 24. However, because the liquid level of the getter source inside the main tank 21 is relatively high, if it exceeds the opening of the main tank 21, the getter source inside the main tank 21 will easily overflow outwards through the surrounding side walls of the main tank 21.

[0055] Please see Figure 2 For example, the chain-type getter coating apparatus also includes a secondary tank 25. A main tank 21 is disposed inside the secondary tank 25, and the secondary tank 25 is used to collect getter sources overflowing from the main tank 21. Thus, when the getter sources inside the main tank 21 are full and overflow, the secondary tank 25 can promptly collect the overflowing getter sources and recycle them, avoiding resource waste and improving the utilization rate of the getter sources.

[0056] For example, the chain-type getter coating apparatus also includes a circulation mechanism 26. The secondary tank 25 is connected to the receiving mechanism 23 via the circulation mechanism 26, which allows the getter source collected in the secondary tank 25 to flow into the receiving mechanism 23. This configuration allows the circulation mechanism 26 to extract the getter source collected in the secondary tank 25 and supply it to the receiving mechanism 23. When the receiving mechanism 23 operates, it sprays the getter source onto the front side of the silicon wafer 24. The portion not coated on the front side of the silicon wafer 24 enters the interior of the main tank 21 and overflows into the secondary tank 25, thus forming a circulation and preventing waste of the getter source. Furthermore, because of the circulation mechanism 26, there is no need for manual addition of getter source to the receiving mechanism 23; the required getter source for the receiving mechanism 23 is provided by the circulation mechanism 26, improving the automation level of the apparatus and enabling efficient use of the getter source.

[0057] For example, the circulation mechanism 26 includes a connecting pipe 261 and a pump body 262. The secondary tank 25 is connected to the receiving mechanism 23 via the connecting pipe 261. The pump body 262 is disposed on the connecting pipe 261. Thus, when the pump body 262 is working, it can provide suction force to transfer the impurity source inside the secondary tank 25 to the receiving mechanism 23 via the connecting pipe 261.

[0058] Based on the aforementioned embodiments, the circulation mechanism 26 further includes a second control switch 263. The second control switch 263 is disposed on the connecting pipe 261 and is used to control the connection or disconnection of the connecting pipe 261. When the second control switch 263 is closed, the impurity source inside the secondary tank 25 cannot enter the receiving mechanism 23 through the connecting pipe 261; conversely, when the second control switch 263 is open and the pump body 262 is controlled to operate, the impurity source inside the secondary tank 25 can be drawn into the receiving mechanism 23.

[0059] Based on the aforementioned embodiments, the chain-type getter coating apparatus further includes a controller, a third control switch 27, a liquid inlet pipe 28, a first liquid level sensor, and a second liquid level sensor. The liquid inlet pipe 28 is connected to the main tank 21, and the third control switch 27 is disposed on the liquid inlet pipe 28. The third control switch 27 is used to control the liquid inlet pipe 28 to be turned on or off.

[0060] A first liquid level sensor is installed in the secondary tank 25, and is used to sense whether the liquid level in the secondary tank 25 has reached a first target value. A second liquid level sensor is installed in the receiving mechanism 23, and is used to sense whether the liquid level in the receiving mechanism 23 has reached a second target value.

[0061] The first and second target values ​​can be flexibly adjusted and set according to actual needs, and are not limited here.

[0062] Specifically, the pump body 262, the second control switch 263, the third control switch 27, the first liquid level sensor, and the second liquid level sensor are all electrically connected to the controller. Thus, the pump body 262, the second control switch 263, the third control switch 27, the first liquid level sensor, and the second liquid level sensor work in coordination under the control of the controller, enabling precise supply and regulation of the impurity source. This avoids the waste caused by gravity dripping of the impurity source in related processes, thereby improving the utilization rate of the impurity source.

[0063] Before the silicon wafer 24 enters the transfer assembly 22 of the main tank 21, the third control switch 27 is turned on, and the getter source is replenished into the main tank 21 through the liquid inlet pipe 28. When the main tank 21 is full of getter source, the getter source overflows from the main tank 21 and enters the secondary tank 25. When the first liquid level sensor detects that the liquid level in the secondary tank 25 has reached the first target value, the controller controls the second control switch 263 to turn on and controls the pump body 262 to work. The getter source in the secondary tank 25 enters the receiving mechanism 23 under the suction force of the pump body 262. When the second liquid level sensor detects that the liquid level in the receiving mechanism 23 has reached the second target value, the controller controls the second control switch 263, the third control switch 27, and the pump body 262 to stop working. In this way, the preliminary preparation for the silicon wafer 24 to enter the main tank 21 for coating with the getter source is completed.

[0064] In one embodiment, another embodiment of this application provides a chain-type getter stand, which includes the chain-type getter coating apparatus of any of the above embodiments.

[0065] The aforementioned chain-type getter machine, since it includes the chain-type getter coating device of any of the above embodiments, the technical effect is brought about by the chain-type getter coating device, and the beneficial effects include the beneficial effects of the chain-type getter coating device, which will not be repeated here.

[0066] In summary, the chain-type getter coating apparatus and chain-type getter machine in this embodiment have at least the following advantages:

[0067] 1. Good coating / getter uniformity of the getter source: The method of combining back immersion and front spraying of silicon wafer 24 is adopted. The back of silicon wafer 24 can be completely immersed in the getter source and uniformly coated, while the front is uniformly distributed by spraying the paste mist from the spray section 231. Compared with related technologies, the coating is more uniform. Uniform getter source coating can improve getter uniformity, reduce the difference in electrical performance caused by uneven distribution of impurities on silicon wafer 24, and improve battery efficiency.

[0068] 2. Improved utilization rate of the getter source, reducing waste costs: A circulation mechanism 26 is provided to drive the circulation of the getter source. Under the power of the circulation mechanism 26, the getter source circulates sequentially between the components. When the main tank 21 is full, it overflows into the secondary tank 25. When the secondary tank 25 is full, the action of the circulation mechanism 26 drives the getter source collected in the secondary tank 25 into the receiving mechanism 23, thereby avoiding waste of the getter source and ensuring a stable supply of the getter source.

[0069] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0070] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0071] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0072] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0073] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0074] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0075] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A chain-type getter coating device, characterized in that, The chain-type getter coating device includes: Main slot (21), the main slot (21) is used to install a sniffing source; A transfer component (22) is disposed inside the main groove (21) and immersed in the getter source. The transfer component (22) is used to transfer the silicon wafer (24) to be gettered, and during the transfer of the silicon wafer (24), the getter source inside the main groove (21) is coated onto the back side of the silicon wafer (24). The receiving mechanism (23) is used to install a getter source. The receiving mechanism (23) is provided with a spray section (231). The spray section (231) is located above the main tank (21). The getter source inside the receiving mechanism (23) is sprayed outward through the spray section (231). The getter source sprayed out by the spray section (231) is in the form of aerosol and is coated on the front side of the silicon wafer (24).

2. The chain-type getter coating apparatus according to claim 1, characterized in that, The transmission component (22) includes a plurality of rollers (221) arranged sequentially along the longitudinal direction L of the main groove (21), and the rollers (221) are rotatably disposed inside the main groove (21).

3. The chain-type getter coating apparatus according to claim 2, characterized in that, The main channel (21) includes two first sidewalls (211) arranged opposite to each other along the transmission direction f of the transmission component (22), and a second sidewall connecting the two first sidewalls (211); the top position of the first sidewall (211) is lower than the top position of the second sidewall, or the top position of the first sidewall (211) and the top position of the second sidewall are at the same horizontal height. The top positions of the two first sidewalls (211) and the top positions of the wheel surfaces of each roller (221) are at the same horizontal height; and / or, the impurity source inside the main groove (21) is completely immersed in each roller (221).

4. The chain-type getter coating apparatus according to claim 1, characterized in that, The spray section (231) is configured as a plurality of spray sections (231), which are arranged sequentially along the longitudinal direction L of the main groove (21).

5. The chain-type getter coating apparatus according to claim 1, characterized in that, The chain-type getter coating device further includes a position sensor, a first control switch, and a controller; the position sensor is disposed in the main tank (21) or the receiving mechanism (23), the position sensor is used to sense whether there is a silicon wafer (24) on the transmission component (22), the first control switch is used to control the spray section (231) to open or close, and the position sensor and the first control switch are both electrically connected to the controller.

6. The chain-type getter coating apparatus according to claim 1, characterized in that, The chain-type getter coating device also includes a secondary tank (25), and the main tank (21) is disposed inside the secondary tank (25). The secondary tank (25) is used to collect the getter sources overflowing from the main tank (21).

7. The chain-type getter coating apparatus according to claim 6, characterized in that, The chain-type getter coating device also includes a circulation mechanism (26), the sub-tank (25) is connected to the receiving mechanism (23) through the circulation mechanism (26), and the circulation mechanism (26) is used to allow the getter source collected by the sub-tank (25) to flow into the receiving mechanism (23).

8. The chain-type getter coating apparatus according to claim 7, characterized in that, The circulation mechanism (26) includes a connecting pipe (261) and a pump body (262); the secondary tank (25) is connected to the receiving mechanism (23) through the connecting pipe (261); the pump body (262) is disposed on the connecting pipe (261).

9. The chain-type getter coating apparatus according to claim 8, characterized in that, The circulation mechanism (26) further includes a second control switch (263), which is disposed on the connecting pipe (261). The second control switch (263) is used to control the connection pipe (261) to be open or closed. The chain-type suction coating device further includes a controller, a third control switch (27), an inlet pipe (28), a first liquid level sensor, and a second liquid level sensor. The inlet pipe (28) is connected to the main tank (21). The third control switch (27) is disposed on the inlet pipe (28). The third control switch (27) is used to control the connection pipe (26) to be open or closed. The inlet pipe (28) is connected or disconnected; the pump body (262), the second control switch (263), the third control switch (27), the first liquid level sensor and the second liquid level sensor are all electrically connected to the controller; the first liquid level sensor is located in the sub-tank (25), and the first liquid level sensor is used to sense whether the liquid level height of the sub-tank (25) has reached the first target value; the second liquid level sensor is located in the receiving mechanism (23), and the second liquid level sensor is used to sense whether the liquid level height of the receiving mechanism (23) has reached the second target value.

10. A chain-type vacuum cleaner, characterized in that, The chain-type getter machine includes the chain-type getter coating device as described in any one of claims 1 to 9.

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