Reducing silicon core structure

By adding planar steps and mounting holes to the crossbeam, combined with a micro-bump structure, the problem of poor overlap between the silicon core and the crossbeam was solved, achieving efficient silicon rod production, reducing black inclusion defects and pressure failure rate, and improving production efficiency and yield.

CN224493770UActive Publication Date: 2026-07-14INNER MONGOLIA TONGWEI SILICON ENERGY CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
INNER MONGOLIA TONGWEI SILICON ENERGY CO LTD
Filing Date
2025-08-05
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

The existing silicon core structure and beam overlap method have problems such as insufficient gap control, poor contact reliability, high cost and low efficiency, resulting in blackening defects, pressure failure and an increase in abnormal materials.

Method used

A planar step is added to the crossbeam and a vertical mounting hole is opened. The silicon core and the crossbeam are tightly fitted together through the plug-in part. Combined with the micro-bump or micro-texture structure, the contact stability and area are enhanced.

Benefits of technology

It significantly reduces thermal disturbance, greatly reduces the proportion of black inclusions, and brings the failure rate of pressing close to zero. The single-furnace pass rate is increased to 98%, and no additional raw materials or equipment are required, thus reducing production costs.

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Abstract

The utility model provides a kind of reduction silicon core structure, the purpose is to solve the existing silicon core and beam building mode, the silicon rod exists more black clip, silicon core lap joint place contact bad exists and is pressed to fail or contact bad produces more fused silicon technical problem.The silicon core structure includes beam and two silicon cores, the both ends of beam are equipped with plane step respectively, vertically set with mounting hole on the plane step, the end of each silicon core is equipped with the plug-in part compatible with corresponding mounting hole, the plug-in part diameter is less than silicon core body diameter and is formed with annular step, when the plug-in part is inserted into mounting hole, the annular step is attached with plane step.The utility model is through being additionally provided with plane step on beam and being vertically set with mounting hole on plane step, make silicon core and beam contact surface from circular arc matching change to plane close attachment, significantly reduce thermal field disturbance, silicon rod black clip proportion reduces, pressed to fail rate tends to zero, single furnace pass rate is significantly improved.
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Description

Technical Field

[0001] This utility model relates to the field of polycrystalline silicon production technology, and in particular to a reduced silicon core structure. Background Technology

[0002] In the photovoltaic and semiconductor industry chain, high-purity silicon rods are one of the core raw materials, and their quality directly affects the performance and yield of downstream products. Currently, most silicon core structures are constructed by connecting silicon cores to beams with circular holes, such as the silicon core connection device in a reduction furnace disclosed in CN202193620U. This method has the following shortcomings: 1. Insufficient gap control: The traditional reduction silicon core structure results in a low matching degree between the arc surface of the silicon core and the beam. Excessive gaps can lead to uneven heat distribution and molten silicon penetration, forming blackening defects. 2. Poor contact reliability: Insufficient contact area at the silicon core connection point leads to increased resistance and localized overheating, causing molten silicon accumulation or poor connection, increasing the risk of pressure failure. 3. Cost and efficiency losses: Handling abnormal materials requires additional manual intervention (this type of problem increases the proportion of abnormal materials by 15%-20%), not only increasing the cost of manual quality improvement (increasing the maintenance cost per furnace by about 8%), but also severely restricting production efficiency and lowering the overall capacity utilization rate. Summary of the Invention

[0003] In view of the above situation and to overcome the defects of the existing technology, the purpose of this utility model is to provide a reduced silicon core structure, which solves the technical problems of existing silicon core and beam assembly methods, such as excessive black inclusions in the produced silicon rods, poor contact at the silicon core overlap leading to pressure failure or excessive molten silicon, and increased abnormal material affecting overall profitability while requiring more manual labor for quality improvement.

[0004] To achieve the above objectives, this utility model provides the following technical solution:

[0005] A reduced silicon core structure includes: a crossbeam with planar steps at both ends, and mounting holes vertically formed on the planar steps; two silicon cores, each with an insertion part at its end that is adapted to the corresponding mounting hole, the diameter of the insertion part being smaller than the diameter of the silicon core body and forming an annular step; when the insertion part is inserted into the mounting hole, the annular step fits against the planar step.

[0006] This invention improves the contact surface between the silicon core and the crossbeam by adding a planar step and vertically drilling mounting holes on the step. This transforms the arc-shaped contact surface into a tight planar fit, reducing the gap by more than 60% and significantly decreasing thermal disturbance. The optimized design greatly reduces the proportion of black inclusions in the silicon rod, bringing the pressure testing failure rate close to zero and increasing the single-furnace yield to over 98%.

[0007] Optionally, the mounting hole is a through hole that extends from both ends.

[0008] Optionally, the planar step extends inward from the end of the crossbeam along its length.

[0009] Optionally, the length of the planar step is greater than or equal to the diameter of the annular step.

[0010] Optionally, the height of the plug portion is greater than the depth of the mounting hole.

[0011] Optionally, the end of the insertion portion away from the annular step is provided with an inlet ramp.

[0012] Optionally, the planar step and / or the annular step may have raised structures on their surfaces.

[0013] Optionally, the raised structure can be micro-bumps or micro-textures. Micro-bumps or micro-textures can offset the vibration displacement of the silicon core, prevent misalignment, and increase the contact area at the overlap by 50%, further avoiding production accidents such as abnormal silicon melting and pressure failure.

[0014] Optionally, the height of the protrusion structure is 0.2mm-0.4mm.

[0015] Optionally, the height of the protrusion structure is 0.3 mm.

[0016] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0017] This invention improves the contact surface between the silicon core and the beam by adding a planar step and vertically opening mounting holes on the planar step. This transforms the arc-shaped contact surface into a tight planar fit (changing the "arc-planar" to a "planar-planar" fit, reducing the gap from 0.5mm to below 0.2mm), a reduction of over 60%, significantly decreasing thermal disturbance. The optimized design significantly reduces the proportion of black inclusions in the silicon rod, bringing the pressure testing failure rate close to zero and increasing the single-furnace pass rate to over 98%. Micro-bumps or micro-textures can offset silicon core vibration displacement, preventing misalignment and increasing the contact area at the overlap by 50%, further avoiding production accidents such as abnormal silicon melting and pressure testing failures. Furthermore, this invention can be completely modified based on existing silicon core materials, requiring no additional raw materials or complex processing equipment, thus eliminating additional silicon material and processing costs. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of this utility model.

[0020] Figure 2 This is a three-dimensional structural diagram of the present invention.

[0021] Figure 3 This is an exploded structural diagram of the present invention.

[0022] Figure 4 This is a schematic diagram of the crossbeam structure in this utility model.

[0023] Figure 5 This is a schematic diagram of the silicon core structure in this utility model.

[0024] Reference numerals: 1. Crossbeam; 11. Planar step; 12. Mounting hole; 2. Silicon core; 21. Connector; 22. Annular step; 23. Guide slope; 3. Protruding structure; D. Length of planar step; d. Diameter of annular step; H. Height of connector; h. Depth of mounting hole. Detailed Implementation

[0025] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of the embodiments of this utility model application. Therefore, the drawings and description are considered to be exemplary in nature and not restrictive.

[0026] In the description of the embodiments of this utility model application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", "end", "side" etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, are only for the convenience of describing the embodiments of this utility model application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the embodiments of this utility model application.

[0027] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this utility model application, "multiple" means two or more, unless otherwise explicitly specified.

[0028] In the embodiments of this utility model application, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this utility model application according to the specific circumstances.

[0029] In the embodiments of this utility model application, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0030] The following disclosure provides many different implementations or examples for carrying out different structures of the embodiments of this utility model application. To simplify the disclosure of the embodiments of this utility model application, specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to limit the embodiments of this utility model application. Furthermore, reference numerals and / or reference letters may be repeated in different examples of the embodiments of this utility model application; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0031] The embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0032] like Figures 1-5 As shown, this utility model application provides a reduced silicon core structure, including a crossbeam 1 and two silicon cores 2 detachably connected to the crossbeam 1.

[0033] The crossbeam 1 has planar steps 11 at both ends, with mounting holes 12 vertically formed on the planar steps 11. The ends of the two silicon cores 2 each have insertion parts 21 that fit into the corresponding mounting holes 12. The diameter of the insertion part 21 is smaller than that of the silicon core body, and an annular step 22 is formed between the insertion part 21 and the silicon core body. During assembly, the two insertion parts are inserted into the two mounting holes 12 of the crossbeam 1 respectively. After the insertion parts and mounting holes are fitted with a clearance, the silicon core and the crossbeam form a dynamic self-locking effect due to the silicon core's own weight and thermal expansion characteristics. The surface of the annular step 22 is in contact with the surface of the planar step 11, making the contact surface between the silicon core and the crossbeam planar and tightly fitted. Compared to the original structure (the contact surface between the silicon core and the crossbeam is "arc-plane"), this invention changes the contact surface between the silicon core and the crossbeam to "plane-plane (planar step and annular step)" fit, thereby reducing the gap from 0.5mm to below 0.2mm, making the silicon core gap smaller, the installation tighter, and significantly reducing thermal disturbance.

[0034] In one implementation scenario, the planar step 11 extends inward from the end of the crossbeam 1 along its length towards the center, and the mounting hole 12 is a through hole that passes through both ends. During manufacturing, it can be based on existing silicon core materials, eliminating the need for additional raw materials or complex processing equipment, thus reducing costs. For example, the planar step 11 is first cut at both ends of the crossbeam 1. Then, the drilling angle, depth, and diameter distribution of the mounting holes 12 are adjusted. A multi-axis CNC drilling machine is used for vertical drilling. By achieving planar matching between the silicon core and the crossbeam contact surface, the hole diameter tolerance range is optimized (reduced from ±0.5mm to ±0.1mm), ensuring that the silicon core forms a "surface contact" rather than a "line contact" after insertion.

[0035] Optionally, the length D of the planar step is greater than or equal to the diameter d of the annular step. Preferably, the length D of the planar step is greater than the diameter d of the planar step.

[0036] Optionally, the height H of the plug-in part is greater than the depth h of the mounting hole. After the plug-in part 21 is inserted into the corresponding mounting hole 12, the end of it away from the annular step 22 extends out of the mounting hole 12.

[0037] In one embodiment, the end of the insertion part 21 away from the annular step 22 is provided with an inlet ramp 23. In use, the inlet ramp 23 extends to the outside of the mounting hole 12 after passing through the mounting hole 12. The size of the end of the inlet ramp 23 away from the annular step 22 is smaller than the diameter of the mounting hole 12. The inlet ramp 23 facilitates the insertion of the insertion part 21 into the mounting hole 12.

[0038] In one embodiment, a raised structure 3 is provided on the surface of the planar step 11 and / or the annular step 22.

[0039] Optionally, the height of the protrusion structure 3 is 0.2mm-0.4mm, and preferably, the height of the protrusion structure 3 is 0.3mm.

[0040] Optionally, the raised structure 3 is a 0.3mm micro-bump or micro-roughness. The 0.3mm bump or roughness can offset the vibration displacement of the silicon core and help increase the contact area (the contact area at the overlap can be increased by 50%).

[0041] In one embodiment, the surface of the planar step 11 is provided with a protruding structure 3, and the surface of the annular step 22 is recessed with a groove. The position of the groove corresponds to and is adapted to the position of the protruding structure 3, and the protruding structure 3 can be located within the groove. In another embodiment, the arrangement of the protruding structure and the groove can be interchanged, that is, the annular step 22 is provided with a protruding structure 3, and the planar step 11 is provided with a matching groove.

[0042] In one embodiment, both the planar step 11 and the annular step 22 are provided with protruding structures 3. The protruding structures on the planar step 11 and the annular step 22 are staggered, and thermal expansion gaps are reserved between adjacent protruding structures.

[0043] In one embodiment, the surfaces of the planar step 11 and the annular step 22 are respectively provided with staggered protrusions 3, and the surface of the annular step 22 and / or the surface of the annular step 22 is recessed downward with grooves, the positions of which are adapted to the corresponding protrusions.

[0044] A method for restoring the silicon core structure: Utilizing existing silicon core materials, structural design and process optimization are performed. First, planar steps are cut at both ends of the crossbeam 1. Then, by adjusting the drilling angle, depth, and diameter distribution, a planar match is achieved between the silicon core and the crossbeam's contact surface. A multi-axis CNC drilling machine is used for vertical drilling to eliminate the gap between the silicon core's arc surface and the crossbeam, optimizing the hole diameter tolerance range (reducing it from ±0.5mm to ±0.1mm) to ensure that the silicon core forms a "surface contact" rather than a "line contact" after insertion. Finally, the silicon core's own weight and thermal expansion characteristics are utilized to create a dynamic self-locking effect, improving contact stability.

[0045] The reduction of silicon core structure has been verified in 30 batches of experimental furnaces. The black inclusion defect rate has been reduced from 3.2% to 0.1%, and the number of pressure failures has been reduced to zero. Experimental data shows that after optimization, the proportion of black inclusions in silicon rods has been reduced by 75%, the pressure failure rate is zero, and the single furnace pass rate has been increased to over 98%.

[0046] It should be noted that the protruding structures in the attached drawings are schematic and are only used to express the concept of this technical solution. The structure of the silicon core and the crossbeam includes, but is not limited to, circular shapes.

[0047] Any aspects not described in detail in this embodiment are techniques known in the art.

[0048] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this utility model, and these should all be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. A reduced silicon core structure, characterized in that, include: A crossbeam has planar steps at both ends, and mounting holes are vertically opened on the planar steps; Two silicon cores, each with an insertion part at its end that matches a corresponding mounting hole. The diameter of the insertion part is smaller than the diameter of the silicon core body and forms an annular step. When the connector is inserted into the mounting hole, the annular step fits into the planar step.

2. The reduced silicon core structure according to claim 1, characterized in that, The mounting hole is a through hole that extends from both ends.

3. The reduced silicon core structure according to claim 1, characterized in that, The planar step extends inward from the end of the crossbeam along its length.

4. The reduced silicon core structure according to claim 3, characterized in that, The length of the planar step is greater than or equal to the diameter of the annular step.

5. The reduced silicon core structure according to claim 1, characterized in that, The height of the plug portion is greater than the depth of the mounting hole.

6. The reduced silicon core structure according to claim 5, characterized in that, The end of the connector away from the annular step is provided with an inlet ramp.

7. The reduced silicon core structure according to claim 1, characterized in that, The planar step and / or the annular step have raised structures on their surfaces.

8. The reduced silicon core structure according to claim 7, characterized in that, The raised structure is a micro-bump or micro-texture.

9. The reduced silicon core structure according to claim 7 or 8, characterized in that, The height of the protruding structure is 0.2mm-0.4mm.

10. The reduced silicon core structure according to claim 9, characterized in that, The height of the protruding structure is 0.3 mm.